Biosensor

Abstract

The utility model provides a biosensor. The biosensor comprises a bearing substrate, a first insulating layer, a second insulating layer, a first conductive circuit layer, a second conductive circuit layer, a plurality of first conductive through layers, a plurality of second conductive through layers, a plurality of first exposed electrodes and a plurality of second exposed electrodes. A plurality of first conductive through layers pass through the second insulating layer. A plurality of second conductive through layers pass through the second insulating layer. Each first bare electrode is electrically connected to the corresponding first conductive through layer. Each second bare electrode is electrically connected to the corresponding second conductive through layer. Therefore, the first bare electrodes can be electrically connected to the first conductive circuit layer through the corresponding first conductive penetrating layers, and a first preset distance is formed between the first bare electrodes and the first conductive circuit layer; and the second exposed electrodes can be electrically connected to the second conductive circuit layer through the corresponding second conductive penetrating layers and are separated from the second conductive circuit layer by a second preset distance.

Description

Technical Field

[0001] The present application relates to a sensor, and in particular to a biosensor. Background Art

[0002] Biosensors can transmit the reactions of biomolecules (such as enzymes, antibodies, cell receptors, or DNA probes) through physical and chemical detectors, and then pass the sensing results through a signal processor to present them to the user. However, existing biosensors still have room for improvement. Utility Model Content

[0003] The technical problem to be solved by this application is to provide a biosensor to address the deficiencies of the existing technology.

[0004] In order to improve or solve the above-mentioned problems, one of the technical means adopted in this application is to provide a biosensor, which includes: a carrier substrate, a first insulating layer, a second insulating layer, a first conductive circuit layer, a second conductive circuit layer, multiple first conductive through-layers, multiple second conductive through-layers, multiple first exposed electrodes, and multiple second exposed electrodes. The first insulating layer is arranged on the carrier substrate. The first conductive circuit layer is arranged on the first insulating layer. The second conductive circuit layer is arranged on the first insulating layer. The second insulating layer is arranged on the first insulating layer and partially covers the first conductive circuit layer and the second conductive circuit layer. The multiple first conductive through-layers pass through the second insulating layer to be electrically connected to the first conductive circuit layer. The multiple second conductive through-layers pass through the second insulating layer to be electrically connected to the second conductive circuit layer. The multiple first exposed electrodes are arranged on the second insulating layer, each of which is electrically connected to a corresponding first conductive through-layer. The multiple second exposed electrodes are arranged on the second insulating layer, each of which is electrically connected to a corresponding second conductive through-layer. The first conductive circuit layer and the second conductive circuit layer are adjacent to each other and separated from each other, and the first conductive circuit layer and the second conductive circuit layer cooperate with each other to form an interdigitated electrode structure; the first conductive circuit layer includes a first extension portion and a plurality of first circuit portions extending from the first extension portion, the second conductive circuit layer includes a second extension portion and a plurality of second circuit portions extending from the second extension portion, and the plurality of first circuit portions of the first conductive circuit layer and the plurality of second circuit portions of the second conductive circuit layer are arranged alternately.

[0005] Optionally, the multiple first line portions of the first conductive line layer are parallel to each other, and the multiple first line portions extend vertically or obliquely from the first extension portion; wherein, the multiple second line portions of the second conductive line layer are parallel to each other, and the multiple second line portions extend vertically or obliquely from the second extension portion; wherein, the first extension portion of the first conductive line layer and the second extension portion of the second conductive line layer are parallel to each other, and the multiple first line portions of the first conductive line layer and the multiple second line portions of the second conductive line layer are parallel to each other; wherein, the first conductive line layer and the second conductive line layer cooperate with each other to form a continuous winding gap between the first conductive line layer and the second conductive line layer.

[0006] Optionally, a first end and a second end of each first conductive penetration layer are electrically contacted with the first conductive circuit layer and the corresponding first exposed electrode, respectively; wherein, a first end and a second end of each second conductive penetration layer are electrically contacted with the second conductive circuit layer and the corresponding second exposed electrode, respectively; wherein, the plurality of first conductive penetration layers are divided into a plurality of first through-hole arrays, and the plurality of first conductive penetration layers of each first through-hole array are electrically connected to the corresponding first circuit portion of the first conductive circuit layer; wherein, the plurality of first exposed electrodes are divided into a plurality of first electrode arrays, and the plurality of first exposed electrodes of each first electrode array are arranged above the corresponding first circuit portion of the first conductive circuit layer and are electrically connected to the plurality of first conductive penetration layers of the corresponding first through-hole array, respectively; wherein , multiple second conductive penetration layers are divided into multiple second through-hole arrays, and the multiple second conductive penetration layers of each second through-hole array are electrically connected to the corresponding second circuit portion of the second conductive circuit layer; wherein, multiple second exposed electrodes are divided into multiple second electrode arrays, and the multiple second exposed electrodes of each second electrode array are arranged above the corresponding second circuit portion of the second conductive circuit layer and are respectively electrically connected to the multiple second conductive penetration layers of the corresponding second through-hole array; wherein, each first exposed electrode is configured to present a columnar shape, and each second exposed electrode is configured to present a long strip shape; wherein, each first exposed electrode is electrically connected to the corresponding one or more first conductive penetration layers, and each second exposed electrode is electrically connected to the corresponding one or more second conductive penetration layers.

[0007] Optionally, the thickness of the first insulating layer is between to and the thickness of the second insulating layer is between to Wherein, the thickness of the first conductive circuit layer is between to The thickness of the second conductive circuit layer is between to and the width of the continuous serpentine gap is between 2000nm and 6000nm; wherein the thickness of each first conductive through layer is between to and the width of each first conductive through layer is between 50nm and 200nm; wherein the thickness of each second conductive through layer is between to and the width of each second conductive through layer is between 50nm and 200nm; wherein the thickness of each first exposed electrode is between to The width of each first exposed electrode is between 100nm and 5000nm, and the distance between two adjacent first exposed electrodes is between 1000nm and 10000nm; wherein the thickness of each second exposed electrode is between to and the width of each second exposed electrode is between 3000nm and 5000nm.

[0008] Optionally, the carrier substrate is configured as a silicon wafer substrate, a gallium nitride substrate, a silicon carbide substrate, a silicon germanium substrate, a sapphire substrate or a glass substrate; wherein the first insulating layer is configured as a first oxide layer, a first nitride layer or a first oxynitride layer; wherein the second insulating layer is configured as a second oxide layer, a second nitride layer or a first oxynitride layer; wherein the first conductive circuit layer is configured as a first gold circuit layer made of gold, a first silver circuit layer made of silver, a first copper circuit layer made of copper, a first aluminum circuit layer made of aluminum, a first nickel circuit layer made of nickel, a first titanium circuit layer made of titanium, a first platinum circuit layer made of platinum, a first palladium circuit layer made of palladium, a first tantalum circuit layer made of tungsten, a first copper-aluminum alloy circuit layer, a first copper-aluminum-silicon alloy circuit layer, a first tantalum nitride circuit layer or a first titanium nitride circuit layer.

[0009] Optionally, the second conductive circuit layer is configured as a second gold circuit layer made of gold, a second silver circuit layer made of silver, a second copper circuit layer made of copper, a second aluminum circuit layer made of aluminum, a second nickel circuit layer made of nickel, a second titanium circuit layer made of titanium, a second platinum circuit layer made of platinum, a second palladium circuit layer made of palladium, a second tantalum circuit layer made of tungsten, a second copper-aluminum alloy circuit layer, a second copper-aluminum-silicon alloy circuit layer, a second tantalum nitride circuit layer or a second titanium nitride circuit layer; wherein each first conductive through-layer is configured as a first gold through-hole made of gold, a first silver through-hole made of silver, a first copper through-hole made of copper, a first aluminum through-hole made of aluminum, a first nickel through-hole made of nickel ...-silicon alloy circuit layer, a second tantalum nitride circuit layer or a second titanium nitride circuit layer a first titanium through-hole, a first platinum through-hole made of platinum, a first palladium through-hole made of palladium, a first tantalum through-hole made of tungsten, a first copper-aluminum alloy through-hole, a first copper-aluminum-silicon alloy through-hole, a first tantalum nitride through-hole or a first titanium nitride through-hole; wherein each second conductive through-layer is configured as a second gold through-hole made of gold, a second silver through-hole made of silver, a second copper through-hole made of copper, a second aluminum through-hole made of aluminum, a second nickel through-hole made of nickel, a second titanium through-hole made of titanium, a second platinum through-hole made of platinum, a second palladium through-hole made of palladium, a second tantalum through-hole made of tungsten, a second copper-aluminum alloy through-hole, a second copper-aluminum-silicon alloy through-hole, a second tantalum nitride through-hole or a second titanium nitride through-hole.

[0010] Optionally, each first exposed electrode is configured to serve as a working electrode, and each first exposed electrode is configured to be a first gold electrode made of gold, a first silver electrode made of silver, a first copper electrode made of copper, a first aluminum electrode made of aluminum, a first nickel electrode made of nickel, a first titanium electrode made of titanium, a first platinum electrode made of platinum, a first palladium electrode made of palladium, a first tantalum electrode made of tungsten, a first copper-aluminum alloy electrode, a first copper-aluminum-silicon alloy electrode, a first tantalum nitride electrode or a first titanium nitride electrode; wherein each second exposed electrode is configured to serve as an auxiliary electrode, and each second exposed electrode is configured to be a first gold electrode made of gold. a second gold electrode, a second silver electrode made of silver, a second copper electrode made of copper, a second aluminum electrode made of aluminum, a second nickel electrode made of nickel, a second titanium electrode made of titanium, a second platinum electrode made of platinum, a second palladium electrode made of palladium, a second tantalum electrode made of tungsten, a second copper-aluminum alloy electrode, a second copper-aluminum-silicon alloy electrode, a second tantalum nitride electrode or a second titanium nitride electrode; wherein the biosensor further includes a third conductive circuit layer, a plurality of third conductive through-layers and a third exposed electrode, the plurality of third conductive through-layers are electrically connected between the third conductive circuit layer and the third exposed electrode, and the third exposed electrode is configured to serve as a reference electrode.

[0011] In order to improve or solve the above-mentioned problems, another technical means adopted in this application is to provide a biosensor, which includes: a carrier substrate, a first insulating layer, a second insulating layer, a first conductive circuit layer, a second conductive circuit layer, multiple first conductive through-layers, multiple second conductive through-layers, multiple first exposed electrodes, and multiple second exposed electrodes. The first insulating layer is arranged on the carrier substrate. The first conductive circuit layer is arranged on the first insulating layer. The second conductive circuit layer is arranged on the first insulating layer. The second insulating layer is arranged on the first insulating layer and partially covers the first conductive circuit layer and the second conductive circuit layer. The multiple first conductive through-layers pass through the second insulating layer to be electrically connected to the first conductive circuit layer. The multiple second conductive through-layers pass through the second insulating layer to be electrically connected to the second conductive circuit layer. The multiple first exposed electrodes are arranged on the second insulating layer, each of which is electrically connected to a corresponding first conductive through-layer. The multiple second exposed electrodes are arranged on the second insulating layer, each of which is electrically connected to a corresponding second conductive through-layer.

[0012] Optionally, the first conductive circuit layer and the second conductive circuit layer are adjacent to each other and separated from each other, and the first conductive circuit layer and the second conductive circuit layer cooperate with each other to form an interdigitated electrode structure; wherein the first conductive circuit layer and the second conductive circuit layer cooperate with each other to form a continuous winding gap between the first conductive circuit layer and the second conductive circuit layer.

[0013] Optionally, each first exposed electrode is configured as a working electrode, and each second exposed electrode is configured as an auxiliary electrode; wherein the biosensor further includes a third conductive circuit layer, multiple third conductive penetration layers and a third exposed electrode, the multiple third conductive penetration layers are electrically connected between the third conductive circuit layer and the third exposed electrode, and the third exposed electrode is configured as a reference electrode.

[0014] One of the beneficial effects of the present application is that the biosensor provided by the present application can, through the technical solutions of "multiple first conductive penetration layers passing through the second insulating layer to be electrically connected to the first conductive circuit layer", "multiple second conductive penetration layers passing through the second insulating layer to be electrically connected to the second conductive circuit layer", "multiple first exposed electrodes are arranged on the second insulating layer, each first exposed electrode is electrically connected to the corresponding first conductive penetration layer", and "multiple second exposed electrodes are arranged on the second insulating layer, each second exposed electrode is electrically connected to the corresponding second conductive penetration layer", so that the first exposed electrode can be electrically connected to the first conductive circuit layer through the corresponding first conductive penetration layer and be at a first predetermined distance from the first conductive circuit layer, and the second exposed electrode can be electrically connected to the second conductive circuit layer through the corresponding second conductive penetration layer and be at a second predetermined distance from the second conductive circuit layer.

[0015] The details of other functions and embodiments of the present application are described below with reference to the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments recorded in this application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0017] Figure 1 This is a flow chart of a method for manufacturing a biosensor according to the first embodiment of the present application;

[0018] Figure 2 Schematic top view of step S102 of the method for manufacturing the biosensor according to the first embodiment of the present application;

[0019] Figure 3 for Figure 2 Partial cross-sectional diagram of III-III;

[0020] Figure 4 Schematic top view of step S104 of the method for manufacturing the biosensor according to the first embodiment of the present application;

[0021] Figure 5 for Figure 4 A partial cross-sectional schematic diagram of VV;

[0022] Figure 6 Schematic top view of step S106 of the method for manufacturing the biosensor according to the first embodiment of the present application;

[0023] Figure 7 for Figure 6 VII-VII partial cross-sectional diagram;

[0024] Figure 8 1 is a schematic top view of step S108 of the method for manufacturing the biosensor according to the first embodiment of the present application (or a schematic top view of the biosensor according to the first embodiment of the present application);

[0025] Figure 9 for Figure 8 A partial cross-sectional diagram of IX-IX;

[0026] Figure 10 FIG. 1 is a schematic top view of a biosensor according to the second embodiment of the present application. DETAILED DESCRIPTION

[0027] The following is an explanation of the implementation methods of the "biosensor and its manufacturing method" disclosed in this application through specific specific examples. Those skilled in the art can understand the advantages and effects of this application from the content disclosed in this specification. This application can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this application. In addition, it should be stated in advance that the drawings of this application are only simple schematic illustrations and are not depicted according to actual dimensions. The following implementation methods will further explain the relevant technical content of this application in detail, but the disclosed content is not intended to limit the scope of protection of this application. In addition, the term "or" used in this article may include any one or more combinations of the associated listed items depending on the actual situation.

[0028] First embodiment

[0029] See Figures 1 to 9 As shown, the first embodiment of the present application provides a method for manufacturing a biosensor, which may include at least the following steps: first, Figure 1 、 Figure 2 and Figure 3 As shown, a first insulating layer 2A is formed on a carrier substrate 1 (step S100), and then a first conductive circuit layer 3A and a second conductive circuit layer 3B are formed on the first insulating layer 2A (step S102); then, Figure 1 、 Figure 4 and Figure 5 As shown, a second insulating layer 2B is formed on the first insulating layer 2A to partially cover the first conductive circuit layer 3A and the second conductive circuit layer 3B (step S104); then, Figure 1 、 Figure 6 and Figure 7 As shown, a plurality of first conductive penetration layers 4A and a plurality of second conductive penetration layers 4B are formed, wherein the plurality of first conductive penetration layers 4A pass through the second insulating layer 2B to be electrically connected to the first conductive circuit layer 3A, and the plurality of second conductive penetration layers 4B pass through the second insulating layer 2B to be electrically connected to the second conductive circuit layer 3B (step S106); next, a plurality of first exposed electrodes 5A and a plurality of second exposed electrodes 5B are formed, wherein the plurality of first exposed electrodes 5A are arranged on the second insulating layer 2B and are respectively electrically connected to the plurality of first conductive penetration layers 4A, and the plurality of second exposed electrodes 5B are arranged on the second insulating layer 2B and are respectively electrically connected to the plurality of second conductive penetration layers 4B (step S108), thereby completing the production of a biosensor S.

[0030] For example, with Figures 2 to 9As shown, in step S100 of forming the first insulating layer 2A on the carrier substrate 1, the first insulating layer 2A can be formed using a semiconductor process (e.g., exposure, development, etching) or a non-semiconductor process. Furthermore, in step S102 of forming the first conductive circuit layer 3A and the second conductive circuit layer 3B on the first insulating layer 2A, the first conductive circuit layer 3A and the second conductive circuit layer 3B can be formed using a semiconductor process (e.g., exposure, development, etching) or a non-semiconductor process. Furthermore, in step S104 of forming the second insulating layer 2B on the first insulating layer 2A, the second insulating layer 2B can be formed using a semiconductor process (e.g., exposure, development, etching) or a non-semiconductor process. Furthermore, in step S106 of forming the plurality of first conductive through-layers 4A and the plurality of second conductive through-layers 4B, the plurality of first conductive through-layers 4A and the plurality of second conductive through-layers 4B can be formed using a semiconductor process (e.g., exposure, development, etching) or a non-semiconductor process. Furthermore, in step S108 of forming the plurality of first exposed electrodes 5A and the plurality of second exposed electrodes 5B, the plurality of first exposed electrodes 5A and the plurality of second exposed electrodes 5B may be formed by a semiconductor process (e.g., exposure, development, etching) or a non-semiconductor process. However, the above example is only one possible embodiment and is not intended to limit the present application.

[0031] It is worth noting that, for example, after step S108 of forming a plurality of first exposed electrodes 5A and a plurality of second exposed electrodes 5B, the biosensor manufacturing method may further include: performing a cleaning step (step S110). The cleaning step (or product surface cleaning step) may be performed by chemical cleaning, water cleaning, plasma cleaning, or any type of semiconductor cleaning method to clean the biosensor S manufactured by the biosensor manufacturing method provided in this application. Furthermore, after step S108 of forming a plurality of first exposed electrodes 5A and a plurality of second exposed electrodes 5B, the biosensor manufacturing method may further include: performing a flattening step (step S112). The flattening step (or electrode surface flattening step) may be performed by physically or chemically treating the top surfaces of the first exposed electrodes 5A and the top surfaces of the second exposed electrodes 5B to improve the surface flatness of each first exposed electrode 5A and each second exposed electrode 5B. However, the above example is only one feasible embodiment and is not intended to limit the present application.

[0032] Furthermore, cooperation Figure 8 and Figure 9As shown, the first embodiment of the present application further provides a biosensor S, which includes: a carrier substrate 1, a first insulating layer 2A, a second insulating layer 2B, a first conductive circuit layer 3A, a second conductive circuit layer 3B, a plurality of first conductive through-layers 4A, a plurality of second conductive through-layers 4B, a plurality of first exposed electrodes 5A, and a plurality of second exposed electrodes 5B. Specifically, the first insulating layer 2A is disposed on the carrier substrate 1, the first conductive circuit layer 3A is disposed on the first insulating layer 2A, and the second conductive circuit layer 3B is disposed on the first insulating layer 2A. Furthermore, the second insulating layer 2B is disposed on the first insulating layer 2A and partially covers the first conductive circuit layer 3A and the second conductive circuit layer 3B. The plurality of first conductive through-layers 4A pass through the second insulating layer 2B to electrically connect to the first conductive circuit layer 3A, and the plurality of second conductive through-layers 4B pass through the second insulating layer 2B to electrically connect to the second conductive circuit layer 3B. In addition, a plurality of first exposed electrodes 5A are provided on the second insulating layer 2B, and each first exposed electrode 5A is electrically connected to a corresponding first conductive through-layer 4A. In addition, a plurality of second exposed electrodes 5B are provided on the second insulating layer 2B, and each second exposed electrode 5B is electrically connected to a corresponding second conductive through-layer 4B. It is worth noting that, for example, Figure 2 As shown, the first conductive circuit layer 3A and the second conductive circuit layer 3B can be adjacent to each other and separated from each other, and the first conductive circuit layer 3A and the second conductive circuit layer 3B can cooperate with each other to form an interdigitated electrode structure. Furthermore, the first conductive circuit layer 3A can include a first extension 31A and a plurality of first circuit portions 32A extending from the first extension 31A, and the second conductive circuit layer 3B can include a second extension 31B and a plurality of second circuit portions 32B extending from the second extension 31B. The plurality of first circuit portions 32A of the first conductive circuit layer 3A and the plurality of second circuit portions 32B of the second conductive circuit layer 3B can be arranged alternately. However, the above example is only one possible embodiment and is not intended to limit the present application.

[0033] For example, with Figure 2 and Figure 3As shown, the multiple first line portions 32A of the first conductive line layer 3A can be parallel or non-parallel to each other, and the multiple first line portions 32A can extend perpendicularly or obliquely from the first extension portion 31A. Furthermore, the multiple second line portions 32B of the second conductive line layer 3B can be parallel or non-parallel to each other, and the multiple second line portions 32B can extend perpendicularly or obliquely from the second extension portion 31B. Furthermore, the first extension portion 31A of the first conductive line layer 3A and the second extension portion 31B of the second conductive line layer 3B can be parallel or non-parallel to each other, and the multiple first line portions 32A of the first conductive line layer 3A and the multiple second line portions 32B of the second conductive line layer 3B can be parallel or non-parallel to each other. Furthermore, the first conductive circuit layer 3A and the second conductive circuit layer 3B can cooperate with each other to form a continuous serpentine gap G (or a continuous S-shaped separation space) between the first conductive circuit layer 3A and the second conductive circuit layer 3B. The width (or maximum width) of the continuous serpentine gap G can be between 2000 nm and 6000 nm (e.g., any positive integer between 2000 nm and 6000 nm). However, the above example is only one possible embodiment and is not intended to limit the present application.

[0034] For example, with Figure 6 and Figure 7 As shown, a first end and a second end of each first conductive through-layer 4A can directly and electrically contact the first conductive circuit layer 3A and the corresponding first exposed electrode 5A (as shown in FIG. Figure 9 As shown), a first end and a second end of each second conductive through layer 4B can directly and electrically contact the second conductive circuit layer 3B and the corresponding second exposed electrode 5B (as shown). Figure 9 As shown). It is worth noting that the multiple first conductive through-layers 4A can be divided into multiple first through-hole arrays V1, and the multiple first conductive through-layers 4A of each first through-hole array V1 can be electrically connected to the corresponding first circuit portion 32A of the first conductive circuit layer 3A. In addition, the multiple second conductive through-layers 4B can be divided into multiple second through-hole arrays V2, and the multiple second conductive through-layers 4B of each second through-hole array V2 can be electrically connected to the corresponding second circuit portion 32B of the second conductive circuit layer 3B. However, the above example is only one feasible embodiment and is not intended to limit the present application.

[0035] For example, with Figure 8 and Figure 9As shown, each first exposed electrode 5A can be configured to have a columnar shape (e.g., a cylindrical shape, a polygonal columnar shape, or a columnar shape of any shape), and each second exposed electrode 5B can be configured to have a long strip shape (or a short strip shape). In addition, each first exposed electrode 5A can be electrically connected to one or more corresponding first conductive through-layers 4A (the first embodiment is described using one first conductive through-layer 4A as an example), and each second exposed electrode 5B can be electrically connected to one or more corresponding second conductive through-layers 4B (the first embodiment is described using multiple second conductive through-layers 4B as an example). In addition, the surface of each first exposed electrode 5A may or may not require a biological probe to be provided. Alternatively, a biological probe (e.g., an antibody, protein, peptide, receptor, aptamer, chemical polymer, microparticle, nucleic acid, or a combination thereof) may be provided. Furthermore, the surface of each second exposed electrode 5B may or may not require a biological probe to be provided. It is noteworthy that the plurality of first exposed electrodes 5A may be divided into a plurality of first electrode arrays E1. The plurality of first exposed electrodes 5A of each first electrode array E1 may be provided above the corresponding first circuit portion 32A of the first conductive circuit layer 3A and electrically connected to the plurality of first conductive penetration layers 4A of the corresponding first through-hole array V1. Furthermore, the plurality of second exposed electrodes 5B can be divided into a plurality of second electrode arrays E2. The plurality of second exposed electrodes 5B in each second electrode array E2 can be disposed above a corresponding second circuit portion 32B of the second conductive circuit layer 3B and electrically connected to the plurality of second conductive through-layers 4B in the corresponding second via array V2. However, the above example is merely one feasible embodiment and is not intended to limit the present application.

[0036] For example, with Figure 2 and Figure 3As shown, according to different requirements, the carrier substrate 1 can be configured as a silicon wafer substrate, a gallium nitride (GaN) substrate, a silicon carbide (SiC) substrate, a silicon germanium (SiGe) substrate, a sapphire substrate, a glass substrate or any type of carrier substrate. In addition, according to different requirements, the first insulating layer 2A can be configured as a first oxide layer, a first nitride layer, a first oxynitride layer or any type of first insulating material layer, and the second insulating layer 2B can be configured as a second oxide layer, a second nitride layer, a first oxynitride layer or any type of first insulating material layer. It is worth noting that, according to different requirements, the thickness (or height) of the first insulating layer 2A can be between to between (e.g. between to Any positive integer between ), and the thickness (or height) of the second insulating layer 2B can be between to between (e.g. between to However, the above example is only one feasible embodiment and is not intended to limit the present application.

[0037] For example, with Figure 2 and Figure 3As shown, according to different requirements, the first conductive circuit layer 3A can be configured as a first gold circuit layer made of gold (Au), a first silver circuit layer made of silver (Ag), a first copper circuit layer made of copper (Cu), a first aluminum circuit layer made of aluminum (Al), a first nickel circuit layer made of nickel (Ni), a first titanium circuit layer made of titanium (Ti), a first platinum circuit layer made of platinum (Pt), a first palladium circuit layer made of palladium (Pd), a first tantalum circuit layer made of tungsten (W), a first copper-aluminum alloy (AlCu) circuit layer, a first copper-aluminum-silicon alloy (AlSiCu) circuit layer, a first tantalum nitride (TaN) circuit layer or a first titanium nitride (TiN) circuit layer. In addition, according to different requirements, the second conductive circuit layer 3B can be configured as a second gold circuit layer made of gold (Au), a second silver circuit layer made of silver (Ag), a second copper circuit layer made of copper (Cu), a second aluminum circuit layer made of aluminum (Al), a second nickel circuit layer made of nickel (Ni), a second titanium circuit layer made of titanium (Ti), a second platinum circuit layer made of platinum (Pt), a second palladium circuit layer made of palladium (Pd), a second tantalum circuit layer made of tungsten (W), a second copper-aluminum alloy (AlCu) circuit layer, a second copper-aluminum-silicon alloy (AlSiCu) circuit layer, a second tantalum nitride (TaN) circuit layer or a second titanium nitride (TiN) circuit layer. It is worth noting that, according to different requirements, the thickness (or height) of the first conductive circuit layer 3A can be between to between (e.g. between to Any positive integer between ), and the thickness (or height) of the second conductive circuit layer 3B can be between to between (e.g. between to However, the above example is only one feasible embodiment and is not intended to limit the present application.

[0038] For example, with Figure 6 and Figure 7As shown, according to different requirements, each first conductive through-layer 4A can be configured as a first gold through-hole made of gold (Au), a first silver through-hole made of silver (Ag), a first copper through-hole made of copper (Cu), a first aluminum through-hole made of aluminum (Al), a first nickel through-hole made of nickel (Ni), a first titanium through-hole made of titanium (Ti), a first platinum through-hole made of platinum (Pt), a first palladium through-hole made of palladium (Pd), a first tantalum through-hole made of tungsten (W), a first copper-aluminum alloy (AlCu) through-hole, a first copper-aluminum-silicon alloy (AlSiCu) through-hole, a first tantalum nitride (TaN) through-hole or a first titanium nitride (TiN) through-hole. In addition, according to different requirements, each second conductive through-layer 4B can be configured as a second gold through-hole made of gold (Au), a second silver through-hole made of silver (Ag), a second copper through-hole made of copper (Cu), a second aluminum through-hole made of aluminum (Al), a second nickel through-hole made of nickel (Ni), a second titanium through-hole made of titanium (Ti), a second platinum through-hole made of platinum (Pt), a second palladium through-hole made of palladium (Pd), a second tantalum through-hole made of tungsten (W), a second copper-aluminum alloy (AlCu) through-hole, a second copper-aluminum-silicon alloy (AlSiCu) through-hole, a second tantalum nitride (TaN) through-hole or a second titanium nitride (TiN) through-hole. It is worth noting that, according to different requirements, the thickness (or height) of each first conductive through-layer 4A can be between to between (e.g. between to and any positive integer between 50 nm and 200 nm). The width of each first conductive through-layer 4A may be between 50 nm and 200 nm (for example, any positive integer between 50 nm and 200 nm). In addition, the thickness (or height) of each second conductive through-layer 4B may be between to between (e.g. between to ), and the width of each second conductive through-layer 4B can be between 50 nm and 200 nm (for example, any positive integer between 50 nm and 200 nm). However, the above example is only one feasible embodiment and is not intended to limit the present application.

[0039] For example, with Figure 8 and Figure 9As shown, according to different requirements, each first exposed electrode 5A can be configured as a working electrode, and each first exposed electrode 5A can be configured as a first gold electrode made of gold (Au), a first silver electrode made of silver (Ag), a first copper electrode made of copper (Cu), a first aluminum electrode made of aluminum (Al), a first nickel electrode made of nickel (Ni), a first titanium electrode made of titanium (Ti), a first platinum electrode made of platinum (Pt), a first palladium electrode made of palladium (Pd), a first tantalum electrode made of tungsten (W), a first copper-aluminum alloy (AlCu) electrode, a first copper-aluminum-silicon alloy (AlSiCu) electrode, a first tantalum nitride (TaN) electrode or a first titanium nitride (TiN) electrode. In addition, according to different requirements, each second exposed electrode 5B can be configured as a counter electrode, and each second exposed electrode 5B can be configured as a second gold electrode made of gold (Au), a second silver electrode made of silver (Ag), a second copper electrode made of copper (Cu), a second aluminum electrode made of aluminum (Al), a second nickel electrode made of nickel (Ni), a second titanium electrode made of titanium (Ti), a second platinum electrode made of platinum (Pt), a second palladium electrode made of palladium (Pd), a second tantalum electrode made of tungsten (W), a second copper-aluminum alloy (AlCu) electrode, a second copper-aluminum-silicon alloy (AlSiCu) electrode, a second tantalum nitride (TaN) electrode or a second titanium nitride (TiN) electrode. It is worth noting that, according to different requirements, the thickness (or height) of each first exposed electrode 5A can be between to between (e.g. between to ), the width of each first exposed electrode 5A may be between 100 nm and 5000 nm (for example, any positive integer between 100 nm and 5000 nm), and the distance between two adjacent first exposed electrodes 5A may be between 1000 nm and 10000 nm (for example, any positive integer between 1000 nm and 10000 nm). In addition, the thickness (or height) of each second exposed electrode 5B may be between to between (e.g. between to ), and the width of each second exposed electrode 5B can be between 3000nm and 5000nm (for example, any positive integer between 3000nm and 5000nm). However, the above example is only one feasible embodiment and is not intended to limit the present application.

[0040] It is worth noting that, for example, in step S102 of forming the first conductive circuit layer 3A and the second conductive circuit layer 3B, the method for manufacturing the biosensor further includes: forming a third conductive circuit layer 3C (such as Figure 2 ), the third conductive line layer 3C is provided on the first insulating layer 2A. In addition, in step S106 of forming a plurality of first conductive through layers 4A and a plurality of second conductive through layers 4B, the method for manufacturing the biosensor further includes: forming a plurality of third conductive through layers 4C (as shown in FIG. Figure 6 As shown in FIG, a plurality of third conductive through layers 4C pass through the second insulating layer 2B to be electrically connected to the third conductive line layer 3C. In addition, in step S108 of forming a plurality of first exposed electrodes 5A and a plurality of second exposed electrodes 5B, the method for manufacturing the biosensor further includes: forming a third exposed electrode 5C (as shown in FIG. Figure 8 As shown), the third exposed electrode 5C is disposed on the second insulating layer 2B and is electrically connected to a plurality of third conductive through layers 4C. Figure 2 、 Figure 6 and Figure 8 As shown, the biosensor S further includes a third conductive circuit layer 3C, a plurality of third conductive through-layers 4C, and a third exposed electrode 5C. The plurality of third conductive through-layers 4C are electrically connected between the third conductive circuit layer 3C and the third exposed electrode 5C, and the third exposed electrode 5C can be configured as a reference electrode. It is worth noting that the third conductive circuit layer 3C can be made of the same material as the first conductive circuit layer 3A or the second conductive circuit layer 3B, the third conductive through-layer 4C can be made of the same material as the first conductive through-layer 4A or the second conductive through-layer 4B, and the third exposed electrode 5C can be made of the same material as the first exposed electrode 5A or the second exposed electrode 5B. However, the above example is only one feasible embodiment and is not intended to limit the present application.

[0041] Second embodiment

[0042] See Figure 10 As shown, the second embodiment of the present application provides a biosensor S. Figure 10 and Figure 8A comparison reveals that the primary difference between the second embodiment and the first embodiment of the present application lies in that, in the second embodiment, a second exposed electrode 5B (or a continuous series of second exposed electrodes) in each second electrode array E2 is disposed above the corresponding second circuit portion 32B of the second conductive circuit layer 3B and is electrically connected to the plurality of second conductive through-layers 4B of the corresponding second via array V2. In other words, depending on different needs, each second electrode array E2 may include multiple second exposed electrodes 5B (as shown in the first embodiment) or only one second exposed electrode 5B (as shown in the second embodiment). However, the above example is merely one feasible embodiment and is not intended to limit the present application.

[0043] Advantageous Effects of the Embodiments

[0044] One of the beneficial effects of the present application is that the biosensor S provided by the present application can, through the technical solutions of "multiple first conductive penetration layers 4A passing through the second insulating layer 2B to be electrically connected to the first conductive circuit layer 3A", "multiple second conductive penetration layers 4B passing through the second insulating layer 2B to be electrically connected to the second conductive circuit layer 3B", "multiple first exposed electrodes 5A are arranged on the second insulating layer 2B, and each first exposed electrode 5A is electrically connected to the corresponding first conductive penetration layer 4A", and "multiple second exposed electrodes 5B are arranged on the second insulating layer 2B, and each second exposed electrode 5B is electrically connected to the corresponding second conductive penetration layer 4B", so that the first exposed electrode 5A can be electrically connected to the first conductive circuit layer 3A through the corresponding first conductive penetration layer 4A and be at a first predetermined distance from the first conductive circuit layer 3A, and the second exposed electrode 5B can be electrically connected to the second conductive circuit layer 3B through the corresponding second conductive penetration layer 4B and be at a second predetermined distance from the second conductive circuit layer 3B.

[0045] One of the beneficial effects of the present application is that the present application provides a method for manufacturing a biosensor, which can achieve the following technical solutions: "forming a plurality of first conductive penetration layers 4A and a plurality of second conductive penetration layers 4B, wherein the plurality of first conductive penetration layers 4A pass through the second insulating layer 2B to be electrically connected to the first conductive circuit layer 3A, and the plurality of second conductive penetration layers 4B pass through the second insulating layer 2B to be electrically connected to the second conductive circuit layer 3B" and "forming a plurality of first exposed electrodes 5A and a plurality of second exposed electrodes 5B, wherein the plurality of first exposed electrodes 5A are arranged on the second insulating layer 2B and are respectively electrically connected to the plurality of first conductive penetration layers 4A, and the plurality of second exposed electrodes 5B are arranged on the second insulating layer 2B and are respectively electrically connected to the plurality of second conductive penetration layers 4B", so that the first exposed electrodes 5A can be electrically connected to the first conductive circuit layer 3A through the corresponding first conductive penetration layers 4A and are at a first predetermined distance from the first conductive circuit layer 3A, and the second exposed electrodes 5B can be electrically connected to the second conductive circuit layer 3B through the corresponding second conductive penetration layers 4B and are at a second predetermined distance from the second conductive circuit layer 3B.

[0046] The embodiments and / or implementation methods described above are only used to illustrate the preferred embodiments and / or implementation methods for realizing the technology of the present application, and do not impose any form of limitation on the implementation methods of the technology of the present application. Any person skilled in the art may make slight changes or modifications to other equivalent embodiments without departing from the scope of the technical means disclosed in the content of the present application, but they should still be regarded as technologies or embodiments that are essentially the same as those of the present application.

Claims

1. A biosensor, characterized in that: The biosensor comprises: a carrier substrate; a first insulating layer, wherein the first insulating layer is disposed on the carrier substrate; a first conductive circuit layer, wherein the first conductive circuit layer is disposed on the first insulating layer; a second conductive circuit layer, wherein the second conductive circuit layer is disposed on the first insulating layer; a second insulating layer, the second insulating layer being disposed on the first insulating layer and partially covering the first conductive circuit layer and the second conductive circuit layer; a plurality of first conductive penetration layers, wherein the plurality of first conductive penetration layers pass through the second insulating layer to be electrically connected to the first conductive circuit layer; a plurality of second conductive penetration layers, wherein the plurality of second conductive penetration layers pass through the second insulating layer to be electrically connected to the second conductive circuit layer; a plurality of first exposed electrodes, the plurality of first exposed electrodes being disposed on the second insulating layer, each of the first exposed electrodes being electrically connected to a corresponding first conductive penetration layer; and a plurality of second exposed electrodes, wherein the plurality of second exposed electrodes are disposed on the second insulating layer, and each of the second exposed electrodes is electrically connected to a corresponding second conductive penetration layer; The first conductive circuit layer and the second conductive circuit layer are adjacent to each other and separated from each other, and the first conductive circuit layer and the second conductive circuit layer cooperate with each other to form an interdigitated electrode structure; In which, the first conductive circuit layer includes a first extension portion and a plurality of first circuit portions extending from the first extension portion, the second conductive circuit layer includes a second extension portion and a plurality of second circuit portions extending from the second extension portion, and the plurality of first circuit portions of the first conductive circuit layer and the plurality of second circuit portions of the second conductive circuit layer are arranged alternately.

2. The biosensor according to claim 1, wherein in, The plurality of first circuit portions of the first conductive circuit layer are parallel to each other, and the plurality of first circuit portions extend vertically or obliquely from the first extension portion; The plurality of second circuit portions of the second conductive circuit layer are parallel to each other, and the plurality of second circuit portions extend vertically or obliquely from the second extension portion; The first extension portion of the first conductive circuit layer and the second extension portion of the second conductive circuit layer are parallel to each other, and the first circuit portions of the first conductive circuit layer and the second circuit portions of the second conductive circuit layer are parallel to each other; The first conductive circuit layer and the second conductive circuit layer cooperate with each other to form a continuous winding gap between the first conductive circuit layer and the second conductive circuit layer.

3. The biosensor according to claim 2, wherein in, A first end and a second end of each first conductive through-layer are electrically in contact with the first conductive circuit layer and the corresponding first exposed electrode respectively; Wherein, a first end and a second end of each second conductive through-layer are electrically in contact with the second conductive circuit layer and the corresponding second exposed electrode respectively; The first conductive penetration layers are divided into a plurality of first through-hole arrays, and the first conductive penetration layers of each first through-hole array are electrically connected to the corresponding first circuit portion of the first conductive circuit layer; The first exposed electrodes are divided into a plurality of first electrode arrays, and the first exposed electrodes of each first electrode array are disposed above the corresponding first circuit portion of the first conductive circuit layer and are respectively electrically connected to the first conductive penetration layers of the corresponding first through-hole array. The plurality of second conductive penetration layers are divided into a plurality of second through-hole arrays, and the plurality of second conductive penetration layers in each second through-hole array are electrically connected to the corresponding second circuit portion of the second conductive circuit layer; The plurality of second exposed electrodes are divided into a plurality of second electrode arrays, and the plurality of second exposed electrodes in each second electrode array are disposed above the corresponding second circuit portion of the second conductive circuit layer and are respectively electrically connected to the plurality of second conductive penetration layers in the corresponding second through-hole array; Each of the first exposed electrodes is configured to present a columnar shape, and each of the second exposed electrodes is configured to present a strip shape; Each of the first exposed electrodes is electrically connected to a corresponding one or more first conductive penetration layers, and each of the second exposed electrodes is electrically connected to a corresponding one or more second conductive penetration layers.

4. The biosensor according to claim 3, wherein in, The thickness of the first insulating layer is between to and the thickness of the second insulating layer is between to between; Wherein, the thickness of the first conductive circuit layer is between to The thickness of the second conductive circuit layer is between to and the width of the continuous serpentine gap is between 2000nm and 6000nm; Wherein, the thickness of each of the first conductive through layers is between to and the width of each of the first conductive through layers is between 50 nm and 200 nm; Wherein, the thickness of each second conductive through layer is between to and the width of each of the second conductive through layers is between 50 nm and 200 nm; Wherein, the thickness of each of the first exposed electrodes is between to The width of each of the first exposed electrodes is between 100 nm and 5000 nm, and the distance between two adjacent first exposed electrodes is between 1000 nm and 10000 nm; Wherein, the thickness of each of the second exposed electrodes is between to and the width of each of the second exposed electrodes is between 3000 nm and 5000 nm.

5. The biosensor according to claim 1, wherein in, The carrier substrate is configured as a silicon wafer substrate, a gallium nitride substrate, a silicon carbide substrate, a silicon germanium substrate, a sapphire substrate or a glass substrate; Wherein, the first insulating layer is configured as a first oxide layer, a first nitride layer or a first oxynitride layer; Wherein, the second insulating layer is configured as a second oxide layer, a second nitride layer or a first oxynitride layer; Among them, the first conductive circuit layer is configured as a first gold circuit layer made of gold, a first silver circuit layer made of silver, a first copper circuit layer made of copper, a first aluminum circuit layer made of aluminum, a first nickel circuit layer made of nickel, a first titanium circuit layer made of titanium, a first platinum circuit layer made of platinum, a first palladium circuit layer made of palladium, a first tantalum circuit layer made of tungsten, a first copper-aluminum alloy circuit layer, a first copper-aluminum-silicon alloy circuit layer, a first tantalum nitride circuit layer or a first titanium nitride circuit layer.

6. The biosensor according to claim 5, wherein in, The second conductive circuit layer is configured as a second gold circuit layer made of gold, a second silver circuit layer made of silver, a second copper circuit layer made of copper, a second aluminum circuit layer made of aluminum, a second nickel circuit layer made of nickel, a second titanium circuit layer made of titanium, a second platinum circuit layer made of platinum, a second palladium circuit layer made of palladium, a second tantalum circuit layer made of tungsten, a second copper-aluminum alloy circuit layer, a second copper-aluminum-silicon alloy circuit layer, a second tantalum nitride circuit layer, or a second titanium nitride circuit layer; wherein each of the first conductive through-layers is configured as a first gold through-hole made of gold, a first silver through-hole made of silver, a first copper through-hole made of copper, a first aluminum through-hole made of aluminum, a first nickel through-hole made of nickel, a first titanium through-hole made of titanium, a first platinum through-hole made of platinum, a first palladium through-hole made of palladium, a first tantalum through-hole made of tungsten, a first copper-aluminum alloy through-hole, a first copper-aluminum-silicon alloy through-hole, a first tantalum nitride through-hole, or a first titanium nitride through-hole; Wherein, each of the second conductive through-layers is configured as a second gold through-hole made of gold, a second silver through-hole made of silver, a second copper through-hole made of copper, a second aluminum through-hole made of aluminum, a second nickel through-hole made of nickel, a second titanium through-hole made of titanium, a second platinum through-hole made of platinum, a second palladium through-hole made of palladium, a second tantalum through-hole made of tungsten, a second copper-aluminum alloy through-hole, a second copper-aluminum-silicon alloy through-hole, a second tantalum nitride through-hole or a second titanium nitride through-hole.

7. The biosensor according to claim 6, wherein in, Each of the first exposed electrodes is configured to serve as a working electrode, and each of the first exposed electrodes is configured as a first gold electrode made of gold, a first silver electrode made of silver, a first copper electrode made of copper, a first aluminum electrode made of aluminum, a first nickel electrode made of nickel, a first titanium electrode made of titanium, a first platinum electrode made of platinum, a first palladium electrode made of palladium, a first tantalum electrode made of tungsten, a first copper-aluminum alloy electrode, a first copper-aluminum-silicon alloy electrode, a first tantalum nitride electrode, or a first titanium nitride electrode; Each of the second exposed electrodes is configured to serve as an auxiliary electrode, and each of the second exposed electrodes is configured as a second gold electrode made of gold, a second silver electrode made of silver, a second copper electrode made of copper, a second aluminum electrode made of aluminum, a second nickel electrode made of nickel, a second titanium electrode made of titanium, a second platinum electrode made of platinum, a second palladium electrode made of palladium, a second tantalum electrode made of tungsten, a second copper-aluminum alloy electrode, a second copper-aluminum-silicon alloy electrode, a second tantalum nitride electrode, or a second titanium nitride electrode; The biosensor further includes a third conductive circuit layer, a plurality of third conductive through-layers and a third exposed electrode, wherein the plurality of third conductive through-layers are electrically connected between the third conductive circuit layer and the third exposed electrode, and the third exposed electrode is configured to serve as a reference electrode.

8. A biosensor, characterized in that: The biosensor comprises: a carrier substrate; a first insulating layer, wherein the first insulating layer is disposed on the carrier substrate; a first conductive circuit layer, wherein the first conductive circuit layer is disposed on the first insulating layer; a second conductive circuit layer, wherein the second conductive circuit layer is disposed on the first insulating layer; a second insulating layer, the second insulating layer being disposed on the first insulating layer and partially covering the first conductive circuit layer and the second conductive circuit layer; a plurality of first conductive penetration layers, wherein the plurality of first conductive penetration layers pass through the second insulating layer to be electrically connected to the first conductive circuit layer; a plurality of second conductive penetration layers, wherein the plurality of second conductive penetration layers pass through the second insulating layer to be electrically connected to the second conductive circuit layer; a plurality of first exposed electrodes, the plurality of first exposed electrodes being disposed on the second insulating layer, each of the first exposed electrodes being electrically connected to a corresponding first conductive penetration layer; and A plurality of second exposed electrodes are provided on the second insulating layer, and each of the second exposed electrodes is electrically connected to a corresponding second conductive penetration layer.

9. The biosensor according to claim 8, wherein in, The first conductive circuit layer and the second conductive circuit layer are adjacent to each other and separated from each other, and the first conductive circuit layer and the second conductive circuit layer cooperate with each other to form an interdigitated electrode structure; The first conductive circuit layer and the second conductive circuit layer cooperate with each other to form a continuous winding gap between the first conductive circuit layer and the second conductive circuit layer.

10. The biosensor according to claim 8, wherein in, Each of the first exposed electrodes is configured to serve as a working electrode, and each of the second exposed electrodes is configured to serve as an auxiliary electrode; The biosensor further includes a third conductive circuit layer, a plurality of third conductive through-layers and a third exposed electrode, wherein the plurality of third conductive through-layers are electrically connected between the third conductive circuit layer and the third exposed electrode, and the third exposed electrode is configured to serve as a reference electrode.

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