Bearing disc and semiconductor equipment applying same

Abstract

The utility model discloses a bearing disc and a semiconductor device using the same, the bearing disc comprises a bearing main body, a sucker assembly and a gas channel, the sucker assembly is embedded in the bearing main body, a gap is arranged between the sucker assembly and the bearing main body, the gap extends to the outer surface of the bearing main body, the gas channel is arranged in the bearing main body, and the gas channel is communicated with the gap; and the gas medium in the gas channel is sprayed out through the gap, so that the wafer on the bearing main body can be adsorbed on the bearing main body in a non-contact manner. Non-contact adsorption is formed by adopting the Bernoulli principle, and one side of the wafer facing the bearing main body is not contacted with the bearing main body but has a gas film gap of several microns through a pressure difference generated by different gas flow rates at two sides of the wafer, so that the direct contact between the wafer and the bearing main body is avoided in the adsorption process, and the adsorption efficiency is improved. And the possibility of wafer pollution is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, and in particular to a carrier plate and semiconductor equipment using the same. Background Art

[0002] Wafer carriers used in semiconductor processing equipment can be categorized as either adsorbable or non-adsorbable based on their wafer holding function. Adsorption carriers can be further categorized by their operating principle into electrostatic and vacuum types. Electrostatic adsorption requires an external DC power supply of several hundred or several thousand volts and electrodes, typically metal mesh, embedded within the carrier. Vacuum carriers, on the other hand, utilize vacuum channels within the carrier surface. Wafer adsorption is often used in processes that require wafer flattening prior to deposition.

[0003] When the carrier plate with adsorption function is working, the wafers will stick to the plate surface, which will bring greater risks to the spread of contaminants. In addition, some plate surfaces are not completely flat. Under the action of adsorption force, deformation corresponding to the concave and convex shape of the plate surface will occur in the wafer plane, which will eventually be reflected in the processing results of the wafer film. Since electrostatic adsorption is achieved under the principle of an external DC electric field, it will also have an adsorption effect on impurity particles floating in the wafer surface space, causing more particle contamination problems in the thin film process. Vacuum adsorption is generated by a pressure higher than the negative pressure in the chamber, which will inevitably suck the process gas in the chamber into the vacuum system. When the vacuum is released, there is a risk of residual gas or particles in the vacuum channel being released into the reaction chamber. Utility Model Content

[0004] The embodiments of the present invention provide a carrier plate and a semiconductor device using the same, which solve the technical problem that the carrier plate of a traditional semiconductor device is directly in contact with the wafer during the adsorption process, resulting in contamination of the wafer.

[0005] In order to solve the above problems, according to one aspect of the present application, an embodiment of the present invention provides a carrier plate, which includes a carrier body, a suction cup assembly and a gas channel. The suction cup assembly is embedded in the carrier body and there is a gap between the two. The gap extends to the outer surface of the carrier body. The gas channel is located inside the carrier body and is connected to the gap. The gas medium in the gas channel is ejected through the gap, which can enable the wafer on the carrier body to be non-contact adsorbed on the carrier body.

[0006] In some embodiments, the suction cup assembly includes a plurality of suction cup bodies and air inlet channels corresponding one to the suction cup bodies, one end of the air inlet channel is connected to the bottom of the suction cup body, and the other end of the air inlet channel is connected to the gas channel; the plurality of suction cup bodies are arranged in at least two circles on the supporting body, at least two circles of the suction cup bodies are evenly distributed along the radial direction of the supporting body, and each circle of the suction cup bodies is evenly distributed along the circumference of the supporting body.

[0007] In some embodiments, the gas channel includes an annular air groove and a strip air groove. The annular air groove is arranged around the center of the supporting body and is arranged in at least two circles. The strip air groove is arranged between adjacent annular air grooves to realize gas transfer; and there are multiple strip air grooves between adjacent annular air grooves; each circle of the annular air groove is connected to the air inlet channel close to the annular air groove.

[0008] In some embodiments, when the center of the supporting body has the suction cup body, the diameter of the air inlet channel corresponding to the suction cup body is smaller than the diameters of the air inlet channels corresponding to the other suction cup bodies.

[0009] In some embodiments, the carrier plate also includes an air intake assembly, which is connected to one of the air intake channels; and when the suction cup body is located in the center of the carrier body, the air intake assembly is connected to the air intake channel corresponding to the suction cup body located in the center of the carrier body.

[0010] In some embodiments, the air intake assembly includes a main air intake pipe, a branch air intake pipe and a heating wire. The branch air intake pipes have multiple branches and are all connected to the ends of the main air intake pipe, and are used to guide the gas flowing out of the main air intake pipe to the suction cup assembly and the gas channel. The heating wire is arranged around the main air intake pipe and / or the branch air intake pipe.

[0011] In some embodiments, the supporting body has a plurality of grooves for placing the suction cup body, and the groove walls of the grooves are inclined to guide the gas ejected from the gap.

[0012] In some embodiments, when the suction cup body is provided in the center of the carrier body, the top of the suction cup body has a dome-shaped gas separation structure for guiding the gas; and / or the peripheral side of the suction cup body has a through hole, and the through hole connects the interior of the suction cup body with the gap.

[0013] In some embodiments, the edge of the carrier body has a retaining ring, which is a circle of protrusions or spaced protrusions arranged along the edge of the carrier body; and / or the carrier body is also provided with auxiliary exhaust holes, which are arranged close to the edge of the carrier body.

[0014] According to another aspect of the present application, an embodiment of the present invention provides a semiconductor device, which includes the above-mentioned carrier plate.

[0015] Compared with the prior art, the carrier plate of the present invention has at least the following beneficial effects:

[0016] The carrier plate provided by the present invention includes a carrier body, a suction cup assembly and a gas channel. The suction cup assembly is embedded in the carrier body and there is a gap between the two. The gap extends to the outer surface of the carrier body. The gas channel is located inside the carrier body and is connected to the gap. The gas medium in the gas channel is ejected through the gap, which can enable the wafer on the carrier body to be non-contact adsorbed on the carrier body.

[0017] The carrier provided in this embodiment utilizes the Bernoulli principle, a fundamental principle in fluid mechanics. Bernoulli's principle states that in fluid flow, an increase in fluid velocity causes a decrease in fluid pressure. Conversely, when the flow rate slows, the pressure increases. This embodiment utilizes the Bernoulli principle to achieve non-contact adsorption by exploiting the pressure differential generated by the different gas flow rates on either side of the wafer. The side of the wafer facing the carrier does not contact the carrier, but instead maintains an air film gap of several microns. This prevents direct contact between the wafer and the carrier during the adsorption process, reducing the potential for wafer contamination. Furthermore, since the backside of the wafer does not contact the carrier, but instead maintains a flowing air cushion, the concave and convex structures of the carrier do not cause corresponding deformation of the wafer, negatively impacting the film's quality. During the adsorption process, non-process gas continuously flows on the backside of the wafer, preventing process gas from depositing thin films on the backside of the wafer, which could affect wafer thickness and stress.

[0018] The semiconductor device provided by the present invention is designed based on the above-mentioned carrier plate. Its beneficial effects refer to the beneficial effects of the above-mentioned carrier plate, which will not be described in detail here.

[0019] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention and to implement it according to the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0021] Figure 1 A schematic structural diagram of a carrier plate provided by an embodiment of the present utility model is shown;

[0022] Figure 2 yes Figure 1 A partial enlarged view of point A in the middle;

[0023] Figure 3 A vertical cross-sectional view of a carrier plate provided by an embodiment of the present utility model is shown;

[0024] Figure 4 A transverse cross-sectional view of a carrier plate provided in an embodiment of the present utility model is shown.

[0025] in:

[0026] 1. Carrying body; 11. Retaining ring; 2. Suction cup assembly; 21. Suction cup body; 22. Air inlet channel; 211. Through hole; 3. Gas channel; 31. Annular air groove; 32. Strip air groove; 4. Gap; 5. Air inlet assembly; 51. Main air inlet pipe; 52. Branch air inlet pipe; 6. Auxiliary exhaust hole; 7. Heating layer; 8. Mounting hole; 9. Disk handle. DETAILED DESCRIPTION

[0027] To further illustrate the technical means and effects employed by the present invention to achieve its intended purpose, the following detailed description of the specific implementation methods, structures, features, and effects of the present invention is provided in conjunction with the accompanying drawings and preferred embodiments. In the following description, different references to "one embodiment" or "embodiment" do not necessarily refer to the same embodiment. Furthermore, specific features, structures, or characteristics of one or more embodiments may be combined in any suitable manner.

[0028] In the description of the present invention, it should be made clear that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence; the terms "vertical", "transverse", "longitudinal", "front", "back", "left", "right", "up", "down", "horizontal", etc. indicating directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention, and do not mean that the devices or elements referred to must have a specific direction or position, and therefore cannot be understood as limitations on the present invention.

[0029] In the description of this utility model, it should be noted that, unless otherwise specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; and direct connections or indirect connections through an intermediary. Those skilled in the art will understand the specific meanings of these terms in this utility model based on the specific circumstances.

[0030] During the operation of semiconductor processing equipment, wafers need to be attached to the carrier plate. Traditional attachment methods include electrostatic attachment and vacuum attachment. Electrostatic attachment refers to the phenomenon in which a small, non-static object, when placed near a statically charged object, experiences an opposite charge due to electrostatic induction, attracting and attaching to the object. Vacuum attachment uses negative pressure to achieve attachment. Whether using electrostatic or vacuum attachment, the wafer is pressed against the carrier plate during operation, creating contact with the plate surface, which increases the risk of contaminant transmission. Furthermore, any unevenness or deformation of the plate surface can be reflected in the wafer film processing results.

[0031] Therefore, the traditional adsorption method can cause wafer contamination and even wafer deformation mainly because of the contact between the wafer and the carrier. Therefore, the present invention provides a carrier that can achieve non-contact adsorption, thereby avoiding the problem of wafer contamination.

[0032] In order to better understand the above technical solution, the above technical solution will be described in detail below with reference to the accompanying drawings and specific implementation methods.

[0033] Example 1

[0034] This embodiment provides a carrier plate, such as Figure 1-4 As shown, the carrier plate includes a carrier body 1, a suction cup assembly 2 and a gas channel 3. The suction cup assembly 2 is embedded in the carrier body 1 and there is a gap 4 between the two. The gap 4 extends to the outer surface of the carrier body 1. The gas channel 3 is located inside the carrier body 1 and is connected to the gap 4. The gas medium in the gas channel 3 is ejected through the gap 4, which can enable the wafer on the carrier body 1 to be non-contact adsorbed on the carrier body 1.

[0035] Specifically, in the present embodiment, the general outline of the carrier body 1 is a circular structure with a certain thickness, and a suction cup assembly 2 is provided in the carrier body 1. The material of the suction cup assembly 2 is the same as that of the carrier body 1 and the suction cup assembly 2 extends to the upper surface of the carrier body 1. In order to embed the suction cup assembly 2 in the carrier body 1, a groove needs to be provided on the carrier body 1. In the present embodiment, the suction cup assembly 2 is embedded in the carrier body 1 and there is a gap 4 between the two, that is, the suction cup assembly 2 is provided in the groove, but the peripheral side of the suction cup assembly 2 is not in contact with the groove wall of the groove, and there is a gap 4 between the two. In addition, a gas channel 3 is also provided in the carrier body 1, and the gas channel 3 is connected to the gap 4. In this way, after adopting this structure, the gas in the gas channel 3 can flow out from the gap 4, thereby allowing the wafer located above the carrier body 1 to be adsorbed on the carrier body 1 in a non-contact manner.

[0036] The carrier plate provided in this embodiment utilizes the Bernoulli principle, which is a basic principle in fluid mechanics. The Bernoulli principle states that in fluid flow, an increase in fluid velocity will cause a decrease in fluid pressure. Conversely, when the flow rate slows down, the pressure will increase. The principle of non-contact adsorption formed by the Bernoulli principle in this embodiment is to generate a pressure difference through the different gas flow rates on both sides of the wafer. The side of the wafer facing the carrier body 1 will not contact the carrier body 1, but there will be an air film gap of several microns. Therefore, direct contact between the wafer and the carrier body 1 is avoided during the adsorption process, reducing the possibility of wafer contamination.

[0037] In addition, when the wafer is adsorbed onto the carrier body 1, the back of the wafer will not contact the carrier body 1, but there will be a layer of flowing air cushion. Therefore, the concave-convex structure of the carrier body 1 will not cause corresponding deformation of the wafer, that is, it will not have a corresponding adverse effect on the film result. In addition, since there is always flowing non-process gas on the back of the wafer during the Bernoulli adsorption process, it avoids the process gas from depositing a thin film on the back of the wafer, which affects the thickness and stress of the wafer, and to some extent, it also plays the role of back-purge. And since the carrier plate provided by this embodiment does not have an external electric field, it will not cause electric field interference to the process requiring plasma, and there will be no possibility of charged impurities caused by electrostatic adsorption being accidentally adsorbed onto the wafer.

[0038] In addition, in the wafer processing process, the wafer needs to be heated, so a heating layer 7 is provided in the carrier body 1. It should be noted that the heating layer 7 is located above the gas channel 3 to avoid the heat generated by the heating layer 7 being blocked by the gas channel 3, resulting in uneven heating of the wafer.

[0039] In a specific embodiment, the suction cup assembly 2 includes a plurality of suction cup bodies 21 and air inlet channels 22 corresponding one to one with the suction cup bodies 21. One end of the air inlet channel 22 is connected to the bottom of the suction cup body 21, and the other end of the air inlet channel 22 is connected to the gas channel 3. In order to fix the suction cup body 21, the carrier body 1 is provided with a plurality of grooves, and the number of the grooves is the same as the number of the suction cup bodies 21. In addition, in order to enable the gas medium to be transmitted within the carrier body 1, a vertical air inlet channel 22 is provided below each groove for fixing the suction cup body 21, and the gas channel 3 is horizontally arranged within the carrier body 1. In this way, the horizontally arranged gas channel 3 is connected to the vertically arranged air inlet channel 22 to achieve gas transmission.

[0040] The diameter of the air inlet duct 22, located near one end of the suction cup body 21, gradually increases until it matches the diameter of the groove, thereby connecting the gap 4 to the air inlet duct 22. In this way, the gas in the gas channel 3 can flow through the air inlet duct 22 and out of the gap 4, forming an airflow on the upper surface of the carrier body 1. This results in different gas flow rates on both sides of the wafer, thereby generating a pressure differential. This pressure differential allows the wafer to be directly suspended on the carrier body 1, avoiding direct contact between the wafer and the carrier body 1 and reducing the possibility of wafer contamination.

[0041] The plurality of suction cup bodies 21 form at least two circles on the carrier body 1 , and the at least two circles of suction cup bodies 21 are evenly distributed along the radial direction of the carrier body 1 , and each circle of suction cup bodies 21 is evenly distributed along the circumference of the carrier body 1 .

[0042] For better explanation, assume that in a certain embodiment, the suction cup body 21 is arranged in three circles on the carrier body 1, which are the first circle of suction cup bodies, the second circle of suction cup bodies, and the third circle of suction cup bodies from the inside out. Then the first circle of suction cup bodies, the second circle of suction cup bodies, and the third circle of suction cup bodies are evenly distributed along the radial direction, and any of the first circle of suction cup bodies, the second circle of suction cup bodies, and the third circle of suction cup bodies are evenly distributed along the circumferential direction. In other words, the suction cup bodies 21 are evenly distributed in all directions on the carrier body 1, which can make the airflow ejected from the gap 4 more uniform, thereby making the adsorption of the wafer more stable.

[0043] In a specific embodiment, the gas channel 3 includes an annular air groove 31 and a strip air groove 32. The annular air groove 31 is arranged around the center of the supporting body 1 and is arranged in at least two circles. The strip air groove 32 is arranged between adjacent annular air grooves 31 to realize gas transfer; and there are multiple strip air grooves 32 between adjacent annular air grooves 31; each circle of the annular air groove 31 is connected to the air inlet channel 22 close to the annular air groove 31.

[0044] For better explanation, the above-mentioned first circle suction cup body, second circle suction cup body and third circle suction cup body are used. In order to match the first circle suction cup body, the second circle suction cup body and the third circle suction cup body, in one embodiment, the annular air groove 31 is provided with three circles, which are the first circle annular air groove, the second circle annular air groove and the third circle annular air groove from the inside to the outside. There are two types of strip-shaped air grooves 32 corresponding to this distribution method, one of which is used to connect the first circle annular air groove and the second circle annular air groove, and the other is used to connect the second circle annular air groove and the third circle annular air groove. In addition, the first circle annular air groove is connected to the air inlet duct 22 in the first circle suction cup body, the second circle annular air groove is connected to the air inlet duct 22 in the second circle suction cup body, and the third circle annular air groove is connected to the air inlet duct 22 in the third circle suction cup body.

[0045] More specifically, the gas medium entering through the gas channel 3 first enters the first ring-shaped gas groove, and is divided into two paths for transmission in the first ring-shaped gas groove. One path enters the second ring-shaped gas groove through the strip gas groove 32, and the other path flows out of the gap 4 corresponding to the first ring-shaped suction cup body by entering the air inlet channel 22 in the first ring-shaped suction cup body. The gas in the second ring-shaped gas groove is then divided into two paths for transmission. One path enters the third ring-shaped gas groove through the strip gas groove 32, and the other path flows out of the gap 4 corresponding to the second ring-shaped suction cup body by entering the air inlet channel 22 in the second ring-shaped suction cup body. The gas in the third ring-shaped gas groove then flows out of the gap 4 corresponding to the third ring-shaped suction cup body by entering the air inlet channel 22 in the third ring-shaped suction cup body. It can be seen that the gas in this embodiment is transmitted radially, making the ejected gas more uniform and avoiding instability during the wafer adsorption process.

[0046] In a specific embodiment, when the center of the carrier body 1 has the suction cup body 21, the diameter of the air inlet duct 22 corresponding to the suction cup body 21 is smaller than the diameter of the air inlet duct 22 corresponding to the remaining suction cup bodies 21. That is to say, among the multiple suction cup bodies 21 forming at least two circles on the carrier body 1, the innermost circle includes only one suction cup body 21, and the suction cup body 21 itself forms a circle. For better explanation, assuming that the suction cup body 21 forms a central circle suction cup body, then on the basis of the above, the suction cup body 21 forms four circles on the carrier body 1, which are the central circle suction cup body, the first circle suction cup body, the second circle suction cup body, and the third circle suction cup body from the inside to the outside. In this embodiment, it is emphasized that the diameter of the air inlet duct 22 corresponding to the suction cup body 21 in the central circle suction cup body is the smallest. The significance of such a setting is to balance the flow resistance on the gas transfer path as much as possible, so that the gas transfer is more uniform. Of course, the diameters of the air inlet channels 22 corresponding to the suction cup bodies 21 in the central circle suction cup body, the first circle suction cup body, the second circle suction cup body and the third circle suction cup body can also be set to increase this time, so that the gas can be transferred more evenly.

[0047] In a specific embodiment, the carrier plate further includes an air intake assembly 5, and the air intake assembly 5 is connected to one of the air intake channels 22; and when the center of the carrier body 1 has the suction cup body 21, the air intake assembly 5 is connected to the air intake channel 22 corresponding to the suction cup body 21 located in the center of the carrier body 1. In this case, the strip-shaped air groove 32 is also used to connect the air intake channel 22 corresponding to the central suction cup body 21 with the first circle of annular air grooves. In this way, the air intake assembly 5 transfers the gas medium, which will first be divided into two paths, one of which enters the air intake channel 22 corresponding to the suction cup body 21 in the center of the carrier body 1, and the other enters the strip-shaped air groove 32 used to connect the air intake channel 22 corresponding to the central suction cup body with the first circle of annular air grooves, and then a divergent transfer can be performed.

[0048] In a specific embodiment, the air intake assembly 5 includes a main air intake pipe 51, branch air intake pipes 52, and a heating wire. The branch air intake pipes 52 are multiple and connected to the ends of the main air intake pipe 51. They are used to guide the gas flowing out of the main air intake pipe 51 into the chuck assembly 2 and the gas channel 3. The heating wire is arranged around the main air intake pipe 51 and / or the branch air intake pipes 52. The main air intake pipe 51 is connected to an external air source for gas transmission through the branch air intake pipes 52. The branch air intake pipes 52 are multiple, for example, one of which is connected to the air intake channel 22 corresponding to the central chuck body, and multiple others are connected to the first annular air groove. Furthermore, the main air intake pipe 51 and / or the branch air intake pipes 52 are surrounded by heating wires. The heating wires are preferably arranged around the main air intake pipe 51 to heat the incoming gas medium, ensuring that the gas temperature supplied to the surface of the carrier body 1 does not fall below a certain set value, thereby preventing the gas medium temperature from being too low and affecting the quality of the wafer.

[0049] In a specific embodiment, the carrier body 1 has multiple grooves for accommodating the suction cup bodies 21. The groove walls are inclined to guide the gas ejected from the gap 4. More specifically, the groove walls are inclined outward from bottom to top. The inclined groove walls have a better guiding effect on the gas, making it easier for the gas to flow along the inclined groove walls. At the same time, the suction cup bodies 21 are located directly above the grooves, and together with the groove walls, they form an airflow guide, allowing the outflowing gas to flow along the carrier body 1.

[0050] In a specific embodiment, when the center of the carrier body 1 has the suction cup body 21, the top of the suction cup body 21 has a dome-shaped gas distribution structure for guiding the gas. The dome-shaped gas distribution structure can quickly guide the gas into the first annular gas groove.

[0051] The circumferential side of the suction cup body 21 has a through hole 211, and the through hole 211 connects the interior of the suction cup body 21 with the gap 4. There are multiple through holes 211, and the multiple through holes 211 are evenly spaced around the circumferential side of the suction cup body 21. In the process of transferring the gas medium, it can not only transfer the gas medium to the gap 4 through the air inlet channel 22, but also transfer the gas medium to the gap 4 through the through hole 211. That is to say, the gas entering through the main air inlet pipe 51 of the gas channel 3 may flow out directly through the gap 4, or may flow directly to the gas distribution structure at the top of the suction cup body 21, and then flow out through the through hole 211 and the gap. In the process of diffusion, the gas medium entering through the branch air inlet pipe 52 not only has a path of flowing out through the coordinated flow of the air inlet channel 22 and the gap 4, but also has a path of flowing out through the coordinated flow of the air inlet channel 22, the through hole 211 and the gap 4. This setting allows the gas medium to flow out quickly, thereby enabling the wafer to be quickly adsorbed without contact.

[0052] In a specific embodiment, the edge of the carrier body 1 is provided with a retaining ring 11, which is a circle of protrusions or spaced protrusions arranged along the edge of the carrier body 1. Because the Bernoulli adsorption force does not provide lateral restraint, a thin gas film exists between the wafer and the carrier body 1. To prevent the wafer from accidentally slipping off the carrier body 1, the retaining ring 11 is provided on the edge of the carrier body 1. The retaining ring 11 can be a complete circle or a discontinuous protrusion structure.

[0053] The carrier body 1 is further provided with auxiliary exhaust holes 6, which are arranged near the edge of the carrier body 1. The auxiliary exhaust holes 6 are used to quickly discharge the gas from the carrier body 1 downward to reduce the disturbance of the air flow field at the edge of the wafer. Preferably, the auxiliary exhaust holes 6 are arranged on the circumference of the carrier body 1 near the edge and are spaced apart from the outermost suction cup body 21.

[0054] In one embodiment, in order to prevent the gas medium from flowing back or impurities in the gas medium, a filter and / or a check valve may be provided in the gas intake assembly 5 .

[0055] The carrier body 1 also has a mounting hole 8 for mounting a lift pin. The mounting hole 8 passes through the carrier body 1 and does not intersect with the heating layer 7 or the gas channel 3. A disk handle 9 is provided below the carrier body 1. The gas supply line of the carrier plate, the power supply cable for heating, and the temperature measurement thermocouple wiring are all arranged in the disk handle 9.

[0056] In the carrier plate provided in this embodiment, the air passages communicating with the suction cup assembly are radially arranged in the carrier body, which can achieve a 360-degree uniform airflow guiding effect and evenly disperse the incoming gas.

[0057] Example 2

[0058] This embodiment provides a semiconductor device, which includes the above-mentioned carrier plate.

[0059] In summary, it is easy for those skilled in the art to understand that, under the premise of no conflict, the above-mentioned advantageous technical features can be freely combined and superimposed.

[0060] The above are merely preferred embodiments of the present invention and do not constitute any form of limitation to the present invention. Any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention are still within the scope of the technical solution of the present invention.

Claims

1. A carrier plate, characterized in that: The carrier plate includes a carrier body, a suction cup assembly and a gas channel. The suction cup assembly is embedded in the carrier body and there is a gap between the two. The gap extends to the outer surface of the carrier body. The gas channel is located inside the carrier body and is connected to the gap. The gas medium in the gas channel is ejected through the gap, which can enable the wafer on the carrier body to be non-contact adsorbed on the carrier body.

2. The carrier plate according to claim 1, wherein: The suction cup assembly includes multiple suction cup bodies and air inlet channels corresponding to the suction cup bodies one by one, one end of the air inlet channel is connected to the bottom of the suction cup body, and the other end of the air inlet channel is connected to the gas channel; the multiple suction cup bodies are arranged in at least two circles on the supporting body, and the at least two circles of suction cup bodies are evenly distributed along the radial direction of the supporting body, and each circle of suction cup bodies is evenly distributed along the circumference of the supporting body.

3. The carrier plate according to claim 2, wherein: The gas channel includes an annular air groove and a strip air groove. The annular air groove is arranged around the center of the supporting body and is arranged in at least two circles. The strip air groove is arranged between adjacent annular air grooves to realize gas transfer; and there are multiple strip air grooves between adjacent annular air grooves; each circle of the annular air groove is connected to the air inlet channel close to the annular air groove.

4. The carrier plate according to claim 2, wherein: When the center of the supporting body has the suction cup body, the diameter of the air inlet channel corresponding to the suction cup body is smaller than the diameters of the air inlet channels corresponding to the other suction cup bodies.

5. The carrier plate according to claim 2, wherein: The carrier plate also includes an air intake assembly, which is connected to one of the air intake channels; and when the suction cup body is located in the center of the carrier body, the air intake assembly is connected to the air intake channel corresponding to the suction cup body located in the center of the carrier body.

6. The carrier tray according to claim 5, wherein: The air intake assembly includes a main air intake pipe, a branch air intake pipe and a heating wire. The branch air intake pipes have multiple branches and are all connected to the ends of the main air intake pipe. They are used to guide the gas flowing out of the main air intake pipe to the suction cup assembly and the gas channel. The heating wire is arranged around the main air intake pipe and / or the branch air intake pipe.

7. The carrier plate according to claim 2, wherein: The supporting body is provided with a plurality of grooves for accommodating the suction cup body, and the groove walls of the grooves are arranged to be inclined to guide the gas ejected from the gap.

8. The carrier tray according to claim 2, wherein: When the suction cup body is provided in the center of the carrier body, the top of the suction cup body has a dome-shaped gas distribution structure for guiding the gas; and / or the peripheral side of the suction cup body has a through hole, and the through hole connects the interior of the suction cup body with the gap.

9. The carrier tray according to claim 1, wherein: The edge of the carrier body has a retaining ring, which is a circle of protrusions or spaced protrusions arranged along the edge of the carrier body; and / or the carrier body is also provided with auxiliary exhaust holes, which are arranged close to the edge of the carrier body.

10. A semiconductor device, characterized in that: The semiconductor device comprises the carrier plate according to any one of claims 1 to 9.

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