Power device, power module, heat dissipation system and power conversion equipment

Abstract

The utility model provides a power device, a power module, a heat dissipation system and power conversion equipment, and relates to the technical field of semiconductor heat dissipation, and the power device comprises a substrate and a semiconductor module; the base plate is provided with a plurality of enclosing panels, and the enclosing panels are matched to define a first cavity; the semiconductor module is welded on an enclosure panel. The substrate and the semiconductor module of the power device can be in direct contact to realize low-thermal-resistance connection, the heat transfer path of the prepared power device is effectively shortened, the connection reliability is high, the possibility of heat dissipation failure caused by long-time use can be reduced, the heat conduction efficiency is ensured, and on the basis of meeting the heat dissipation requirement of the semiconductor module, the heat dissipation efficiency of the semiconductor module is improved. The heat dissipation stability of the prepared power device is effectively guaranteed, the first cavity can be filled with the phase change medium, the heat dissipation performance of the prepared power device is guaranteed, and then the heat dissipation stability of the power module is effectively guaranteed.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor heat dissipation technology, and in particular to a power device, a power module, a heat dissipation system, and a power conversion device. Background Art

[0002] Power devices, also known as power electronic devices, are semiconductor devices used for power processing. With the development of power technology and the increase in electricity demand, the processing capacity of power devices has also developed towards high voltage and large current, and the processing power of power devices has also increased accordingly. Correspondingly, the power density and heat dissipation of the core components of power devices, namely semiconductor modules, have also increased significantly, putting higher requirements on the heat dissipation of semiconductor modules.

[0003] Currently, heat dissipation for semiconductor modules is typically achieved using a heat sink. Specifically, thermal grease is applied to the semiconductor module, and the greased end face is mounted on a substrate. The grease then transfers the heat from the semiconductor module to the substrate for dissipation. However, as the amount of heat dissipated by semiconductor modules increases, it becomes increasingly difficult to meet the heat dissipation requirements of semiconductor modules using thermal grease. Furthermore, thermal grease can easily fail over time, affecting the heat dissipation efficiency of power devices. Utility Model Content

[0004] The problem solved by the present disclosure is how to ensure the heat dissipation efficiency of power devices while meeting the heat dissipation requirements of semiconductor modules.

[0005] To solve the above problems, the present disclosure provides a power device, a power device, a heat dissipation system and a power conversion device.

[0006] In a first aspect, the present disclosure provides a power device comprising a substrate and a semiconductor module; the substrate has a plurality of enclosing panels, and the plurality of enclosing panels cooperate to form a first cavity; the semiconductor module is welded to one of the enclosing panels.

[0007] Optionally, the first cavity is in a vacuum state; or, there is a reducing gas in the first cavity.

[0008] Optionally, a first port is provided on the substrate, and the first port passes through the enclosing panel and communicates with the first cavity.

[0009] Optionally, the power device further includes a heat transfer structure, which is located in the first cavity and is thermally coupled to the plurality of enclosed panels.

[0010] Optionally, the power device further includes a heat transfer plate, which is located in the first cavity, and the heat transfer structure is connected to the enclosing panel and the heat transfer plate respectively; the heat transfer plate has a second cavity inside, and the second cavity has a phase change medium.

[0011] Optionally, a second port is provided on the substrate, the second port passes through the enclosing panel and penetrates into the heat transfer plate, and the second port is used for inputting the phase change medium into the second cavity.

[0012] Optionally, the power device further includes a reinforcement structure, which is installed in the first cavity. The reinforcement structure includes at least a plurality of support columns, and both ends of the support columns are respectively connected to the two oppositely arranged enclosing panels.

[0013] Optionally, there are a plurality of semiconductor modules, and the plurality of semiconductor modules are distributed at intervals on the substrate.

[0014] Optionally, a groove is provided on the enclosing panel, and the semiconductor module is embedded in the groove.

[0015] In a second aspect, the present disclosure provides a power module made of the power device described above.

[0016] Optionally, a phase change medium is provided in the first cavity of the substrate of the power device.

[0017] Optionally, the power module further includes a first sealing member provided on the power device, the phase change medium in the first cavity is input through a first port of the substrate, and the first sealing member seals the first port.

[0018] In a third aspect, the present disclosure provides a heat dissipation system, comprising a heat dissipation assembly and the power device module as described above, wherein the heat dissipation assembly is connected to a substrate of a power device of the power module.

[0019] In a fourth aspect, the present disclosure provides a power conversion device, comprising the power module as described above, or comprising the heat dissipation system as described above.

[0020] In the power device disclosed herein, the substrate has a plurality of enclosing panels, which can be combined to form a first cavity. At the same time, the semiconductor module is welded to the enclosing panels, which effectively shortens the heat transfer path of the prepared power device and has high connection reliability, thereby reducing the possibility of heat dissipation failure during long-term use. Moreover, the heat generated by the semiconductor module can be directly transferred to the substrate, thereby avoiding heat accumulation between the semiconductor module and the substrate due to high thermal resistance, and ensuring heat conduction efficiency. The power device made using such a power device can significantly improve its heat dissipation performance, thereby effectively ensuring the heat dissipation efficiency of the power device on the basis of meeting the heat dissipation requirements of the semiconductor module. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is a schematic structural diagram of a power device in the first embodiment of the present disclosure;

[0022] Figure 2 for Figure 1 An enlarged schematic diagram of A shown in FIG;

[0023] Figure 3 Schematic diagram of the structure of the substrate of the power device in the first embodiment of the present disclosure;

[0024] Figure 4 This is a schematic structural diagram of a power device in the second embodiment of the present disclosure;

[0025] Figure 5 Schematic diagram of the structure of a substrate of a power device in a second embodiment of the present disclosure;

[0026] Figure 6 Schematic diagram of the structure of a substrate of a power device in a third embodiment of the present disclosure;

[0027] Figure 7 for Figure 6 A partial schematic diagram of the cross-sectional structure at viewing angle B shown in FIG;

[0028] Figure 8 This is a schematic structural diagram of a power device in a fourth embodiment of the present disclosure;

[0029] Figure 9 This is a schematic structural diagram of a power device in a fifth embodiment of the present disclosure;

[0030] Figure 10 Schematic diagram of the structure of the substrate of the power module in the first embodiment of the present disclosure;

[0031] Figure 11 Schematic diagram of the structure of the substrate of the power module in the second embodiment of the present disclosure;

[0032] Figure 12 Schematic diagram of the structure of the heat dissipation system in the first embodiment of the present disclosure.

[0033] Description of reference numerals:

[0034] 1. Substrate; 11. Enclosing panel; 111. Groove; 12. First cavity; 13. First port; 14. First sealing member; 15. Second port; 16. Second sealing member; 2. Semiconductor module; 21. Chip; 22. Insulation layer; 221. First metal layer; 222. Ceramic layer; 223. Second metal layer; 23. Chip connection layer; 24. Packaging structure; 3. Heat transfer structure; 4. Heat transfer plate; 41. Second cavity; 5. Heat dissipation component; 6. Reinforcement structure. DETAILED DESCRIPTION

[0035] To make the above-mentioned purposes, features, and advantages of the present disclosure more clearly understood, specific embodiments of the present disclosure are described in detail below with reference to the accompanying drawings. Although certain embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be construed as being limited to the embodiments described herein. Instead, these embodiments are provided to provide a more thorough and complete understanding of the present disclosure. It should be understood that the drawings and embodiments of the present disclosure are for illustrative purposes only and are not intended to limit the scope of protection of the present disclosure.

[0036] The Z-axis in the accompanying drawings represents the vertical direction, that is, the up-down position, with the positive direction of the Z-axis representing the top and the reverse direction of the Z-axis representing the bottom. The X-axis in the accompanying drawings represents the horizontal direction and is designated as the front-to-back position, with the positive direction of the X-axis representing the front side and the reverse direction of the X-axis representing the rear side. The Y-axis in the accompanying drawings represents the left-to-right position, with the positive direction of the Y-axis representing the right side and the reverse direction of the Y-axis representing the left side. It should also be noted that the aforementioned Z-axis, Y-axis, and X-axis are merely for the purpose of facilitating the description of the present disclosure and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be understood as limiting the present disclosure.

[0037] The term "including" and its variations used in this document are open inclusions, that is, "including but not limited to"; the term "based on" means "at least partially based on"; the term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one other embodiment"; the term "some embodiments" means "at least some embodiments"; the term "optionally" means "optional embodiments". The relevant definitions of other terms will be given in the following description. It should be noted that the concepts of "first", "second", etc. mentioned in this disclosure are only used to distinguish different devices, modules or units, and are not used to limit the order or interdependence of the functions performed by these devices, modules or units.

[0038] It should be noted that the modifications of "one" and "multiple" mentioned in the present disclosure are illustrative rather than restrictive, and those skilled in the art should understand that unless otherwise clearly indicated in the context, they should be understood as "one or more".

[0039] Driven by advancements in power electronics and materials science, wind power generation needs, grid compatibility, and energy transition trends, power conversion devices such as solar-storage converters are trending toward high power. The positioning of high-power converters is the result of a combination of technological, economic, policy, and market demands, aiming to improve energy conversion efficiency, reduce costs, and promote the widespread use of renewable energy. Correspondingly, as converter power increases, the power density of its core component, the semiconductor module—the power device—increases significantly, placing increasing demands on heat dissipation. Existing semiconductor modules primarily dissipate heat through heat sinks, such as spade-shaped or profiled heat sinks, combined with fan-assisted forced convection. The bottom of the semiconductor module is coated with thermal grease and mounted on a substrate, transferring heat to the heat sink through the substrate. This method provides effective heat dissipation for lower-power semiconductor modules. However, as the power of power devices increases, the aforementioned heat dissipation method becomes increasingly inadequate to meet the heat dissipation requirements of semiconductor modules. Furthermore, thermal grease exhibits poor reliability over long-term use, making it prone to heat dissipation failure and damage to the semiconductor module.

[0040] In response to the problems existing in the above-mentioned related technologies, this embodiment provides a power device, a power device, a heat dissipation system and a power conversion device.

[0041] like Figure 1 As shown, a power device provided by the first embodiment of the present disclosure includes a substrate 1 and a semiconductor module 2; the substrate 1 has a plurality of enclosing panels 11, and the plurality of enclosing panels 11 cooperate to form a first cavity 12; the semiconductor module 2 is welded on an enclosing panel 11.

[0042] Specifically, if Figure 2As shown, a chip 21 is packaged inside the semiconductor module 2, wherein the chip 21 is placed on a first side of the insulating layer 22, and a second side of the insulating layer 22 opposite to the first side is mounted on the substrate 1, so that the heat generated by the chip 21 can be transferred to the substrate 1 through the insulating layer 22, thereby achieving heat dissipation of the chip 21. On this basis, the insulating layer 22 is divided into a three-layer structure, which are a first metal layer 221, a ceramic layer 222, and a second metal layer 223 in a direction away from the chip 21. The first metal layer 221 and the second metal layer 223 are both copper layers, and the ceramic layer 222 is an insulating ceramic layer. The chip 21 can be connected to the first metal layer 221 by high-temperature soldering. The metal layer 221 is connected with low thermal resistance to ensure the stability of heat transfer, and after the chip 21 is welded to the first metal layer 221, the whole will be epoxy-sealed through the packaging structure 24. In this way, the ceramic layer 222 can not only ensure the insulation effect of the insulating layer 22, but also prevent the insulating layer 22 from bursting when the first metal layer 221 and the chip 21 are welded and the overall packaging is in a high-temperature environment, thereby ensuring the overall packaging stability of the semiconductor module 2; the semiconductor module 2 and the enclosing panel 11 are welded by high-temperature soldering; the substrate 1 is composed of two shells with openings facing each other, and the two shells are aligned and welded to form a substrate 1 with a first cavity 12.

[0043] In this embodiment, Figure 1 As shown, a substrate 1 and a semiconductor module 2 are provided to form a power device, wherein the substrate 1 has a plurality of enclosing panels 11, and the plurality of enclosing panels 11 can be combined to form a first cavity 12, and the semiconductor module 2 is welded to the enclosing panel 11, so that the substrate 1 and the semiconductor module 2 can be in direct contact to achieve a low thermal resistance connection, and the connection reliability is high, which can reduce the possibility of heat dissipation failure caused by long-term use, and the heat generated by the semiconductor module 2 can be directly transferred to the substrate 1, thereby avoiding the accumulation of heat between the semiconductor module 2 and the substrate 1 due to the high thermal resistance, ensuring the heat conduction efficiency, and the heat dissipation performance of the power device can be significantly improved, thereby effectively ensuring the heat dissipation efficiency of the power device on the basis of meeting the heat dissipation requirements of the semiconductor module 2.

[0044] The provision of the first cavity 12 can reduce material usage and weight. In some scenarios, it can facilitate the use of the power device after welding to meet the corresponding material storage requirements. For example, when the power device is used in the power module described below, the first cavity 12 can be used to accommodate phase change dielectrics.

[0045] It should be noted that the semiconductor module 2 is welded to the enclosing panel 11 by high-temperature soldering. With this arrangement, the thermal resistance of the solder layer after welding is low and the welding stability is better, which can not only ensure the structural stability of the power device prepared subsequently, but also ensure the heat dissipation efficiency of the power device.

[0046] In the first embodiment of the present disclosure, the first cavity 12 is in a vacuum state.

[0047] Specifically, the first cavity 12 is set to a vacuum state. The first cavity 12 can be directly evacuated and then sealed, or the vacuum state of the first cavity 12 can be maintained by continuous air extraction. For example, the air in the first cavity 12 is continuously extracted using the holes on the substrate 1.

[0048] In this optional embodiment, the first cavity 12 is set to a vacuum state. In this configuration, when the semiconductor module 2 is welded to the enclosing panel 11, the heat generated by the welding diffuses into the first cavity 12, causing the temperature to rise. When the volume of the first cavity 12 remains unchanged, the air pressure in the first cavity 12 increases as the temperature rises. Since the first cavity 12 is in a vacuum state, the temperature change of the substrate 1 caused by welding does not cause the air pressure in the first cavity 12 to change. This can prevent the air pressure in the first cavity 12 from rising far above the air pressure outside the substrate 1, causing deformation or even bursting of the substrate 1, thereby ensuring the stability of the semiconductor module 2 when welded to the enclosing panel 11, and is suitable for continuous power device manufacturing. Moreover, since the first cavity 12 is in a vacuum state, there is no oxidizing gas such as oxygen in the first cavity 12. Under the high temperature caused by welding, no oxidation reaction occurs in the first cavity 12, thereby preventing the metal inner wall of the first cavity 12 from undergoing an oxidation reaction with the oxidizing gas under the action of high temperature, which may reduce the stability of the inner wall of the first cavity 12, thereby ensuring the structural stability of the substrate 1.

[0049] Different from the first embodiment of the present disclosure, in this embodiment, reducing gas is present in the first cavity 12 .

[0050] Specifically, reducing gas refers to a gas used as a reducing agent in an oxidation-reduction reaction. Under high temperature conditions, reducing gas will only undergo a reduction reaction with metal oxides, but will not react with metals. For example, the reducing gas can be helium, etc.; the first cavity 12 has reducing gas, and the first cavity 12 can be filled with reducing gas, or only partially filled with reducing gas, and it is only necessary to ensure that the proportion of oxidizing gas in the first cavity 12 is less than 10%; of course, during the process of welding the semiconductor module 2 to the enclosing panel 11, the reducing gas can be continuously filled through the holes on the substrate 1, or it can be directly sealed after the filling is completed.

[0051] In this embodiment, a reducing gas such as helium is directly filled into the first cavity 12. Since the reducing gas will not undergo an oxidation reaction with the metal under high temperature conditions, and the input of the reducing gas can reduce the proportion of the oxidizing gas in the first cavity 12, thereby effectively avoiding the oxidation reaction in the first cavity 12 and causing the structural stability of the substrate 1 to be reduced; on this basis, an inert gas can also be used as the reducing gas. Since the inert gas is inactive, when the temperature in the first cavity 12 rises, the inert gas expands less due to heat, causing the air pressure in the first cavity 12 to change less, so it is not easy to cause the air pressure in the first cavity 12 to rise to far exceed the air pressure outside the substrate 1, and it can also effectively ensure the stability of the semiconductor module 2 when it is welded to the enclosing panel 11.

[0052] like Figure 3 As shown, a first port 13 is provided on the substrate 1 , and the first port 13 passes through the enclosing panel 11 and communicates with the first cavity 12 .

[0053] Specifically, if Figure 3 As shown, the first port 13 is provided on the enclosing panel 11 on the side of the substrate 1 and can be a columnar structure. Of course, the first port 13 is also merely a hole provided on the enclosing panel 11. The cross-sectional shape of the first port 13 is circular. Of course, the cross-sectional shape of the first port 13 can also be other shapes such as a polygon. Of course, after the semiconductor module 2 is welded to the enclosing panel 11 with the assistance of gas extraction or gas supply through the first port 13, the first port 13 can be directly sealed by welding or other methods. The first port 13 can also be retained and a phase change medium can be injected into the first cavity 12 through the first port 13. After the phase change medium is injected, the first port 13 can be sealed again. This ensures the heat transfer effect of the substrate 1 and thus the heat dissipation effect of the power device.

[0054] In this optional embodiment, in order to effectively slow down the pressure change in the first cavity 12 during the process of welding the semiconductor module 2 to the enclosing panel 11, as shown in FIG. Figure 3 As shown, a first port 13 passing through the enclosing panel 11 is provided on the substrate 1, wherein the first port 13 can allow airflow to enter and exit the first cavity 12. Therefore, the input end of the exhaust device can be connected to the first port 13, and the exhaust device can be used to continuously exhaust the first cavity 12, or the first port 13 can be sealed after all or part of the gas is extracted to achieve a vacuum setting of the first cavity 12, thereby ensuring the stability of the semiconductor module 2 during the process of welding to the enclosing panel 11; of course, the output end of the gas transmission device can also be connected to the first port 13, and the gas transmission device can be used to continuously input a reducing gas such as an inert gas into the first cavity 12 through the first port 13, or the first port 13 can be sealed after the inert gas is input, thereby ensuring the stability of the semiconductor module 2 during the process of welding to the enclosing panel 11.

[0055] like Figure 1 As shown, the power device further includes a heat transfer structure 3 , which is located in the first cavity 12 and is thermally coupled to the plurality of enclosing panels 11 .

[0056] Specifically, if Figure 1 As shown, the heat transfer structure 3 can be a columnar structure, of course, it can be a mesh structure, or a capillary structure injected with a phase change medium. The heat transfer structure 3 is made of metal, which can be copper or aluminum and other metals with good heat transfer effect, as long as the heat transfer function of the heat transfer structure 3 is guaranteed; Figure 1 As shown, the heat transfer structure 3 is mainly disposed between an enclosing panel 11 welded to the semiconductor module 2 and another enclosing panel 11 opposite to the one enclosing panel 11 .

[0057] In this optional embodiment, if Figure 1 As shown, a heat transfer structure 3 is arranged in the first cavity 12, wherein the heat transfer structure 3 is thermally coupled to a plurality of enclosing panels 11. With this arrangement, after the semiconductor module 2 transfers heat to the enclosing panel 11, the enclosing panel 11 can utilize the heat transfer structure 3 to continue to transfer the heat in a direction away from the semiconductor module 2 to achieve heat dissipation, thereby effectively improving the heat dissipation effect of the substrate 1.

[0058] Different from other embodiments of the present disclosure, in the second embodiment of the present disclosure, as Figure 4 As shown, the power device further includes a heat transfer plate 4, which is located in the first cavity 12, and the heat transfer structure 3 is connected to the enclosing panel 11 and the heat transfer plate 4 respectively; the interior of the heat transfer plate 4 has a second cavity 41, and the second cavity 41 has a phase change medium.

[0059] Specifically, the base plate 1 is formed by welding two relatively open shells, and the heat transfer plate 4 is formed by welding a plurality of heat transfer panels together. The prepared heat transfer plate 4 is placed in any shell constituting the base plate 1, and a portion of the heat transfer structure 3 is welded and fixed in the shell. The heat transfer plate 4 is then welded to the heat transfer structure 3 to fix the heat transfer plate 4. The injection of the phase change medium into the second cavity 41 of the heat transfer plate 4 can be carried out after the heat transfer panel is partially assembled and welded, or after the heat transfer panel is welded, the phase change medium can be injected through the holes on the heat transfer panel, and the holes are sealed by welding or other methods after the injection is completed.

[0060] In this embodiment, in order to ensure the heat dissipation performance of the power device prepared by the power device, as Figure 4As shown, a heat transfer plate 4 is arranged in the first cavity 12, wherein the heat transfer structure 3 is connected to the enclosing panel 11 and the heat transfer plate 4 respectively, so that the heat transferred from the semiconductor module 2 to the enclosing panel 11 can be transferred to the heat transfer plate 4 through the heat transfer structure 3. The heat transfer plate 4 has a second cavity 41 inside, and the second cavity 41 contains a phase change medium. In this way, when heat is transferred to one side of the heat transfer plate 4, the phase change medium can be used to absorb the heat and dissipate it to the other side of the heat transfer plate 4. Finally, the heat is further transferred to the enclosing panel 11 away from the semiconductor module 2 through the heat transfer structure 3 on the other side of the heat transfer plate 4, and finally the heat dissipation is completed.

[0061] like Figure 4 and Figure 5 As shown, a second port 15 is provided on the substrate 1 , and the second port 15 passes through the enclosing panel 11 and into the heat transfer plate 4 . The second port 15 is used for inputting the phase change medium into the second cavity 41 .

[0062] Specifically, if Figure 4 and Figure 5 As shown, the second port 15 is provided on the heat transfer panel on the side of the heat transfer plate 4, and can be extended into a columnar structure, and finally pass through the enclosing panel 11 on the side of the substrate 1. Of course, the columnar structure of the second port 15 can continue to extend out of the enclosing panel 11, or only form a hole on the enclosing panel 11; the cross-sectional shape of the second port 15 is circular; of course, after the second port 15 is used to input the phase change medium into the second cavity 41, in order to ensure the sealing of the second cavity 41, the second port 15 can be directly welded and covered by welding to form a solder accumulation to form a second sealing member 16. At this time, the second sealing member 16 and the second port 15 are formed as one piece. The second sealing member 16 and the second port 15 can also be set as a separate structure. The cross-sectional shape of the second sealing member 16 is consistent with the cross-sectional shape of the second port 15, for example, the cross-sectional shape of the second sealing member 16 can be circular.

[0063] In this optional embodiment, in order to facilitate the input of the phase change medium into the second cavity 41, as shown in FIG. Figure 4 and Figure 5 As shown, a second port 15 is provided on the substrate 1, wherein the second port 15 can pass through the enclosing panel 11 and penetrate into the heat transfer plate 4. With this arrangement, after the substrate 1 and the heat transfer plate 4 are prepared, the output end of the transmission device can be connected to the second port 15, and the phase change medium can be input into the second cavity 41 through the second port 15, thereby ensuring the overall heat conduction and heat dissipation effect of the substrate 1. On this basis, the second sealing member 16 can seal the second port 15. After the phase change medium is injected, the second sealing member 16 is used to seal the second port 15 to prevent leakage of the phase change medium and ensure the stability of the power device prepared subsequently.

[0064] The heat transfer structure 3 includes at least one of a copper column and a copper mesh.

[0065] Specifically, the copper column can be a hollow copper column, the copper mesh can be a hollow copper mesh, and the heat transfer structure 3 can also ensure a capillary structure. The material of the capillary structure can be metallic copper or other metals with better heat transfer effect.

[0066] In this optional embodiment, in order to ensure the heat transfer effect of the heat transfer structure 3, at least one of a copper column or a copper mesh is set as the heat transfer structure 3, and the better heat transfer performance of copper metal is utilized to effectively improve the heat transfer effect of the heat transfer structure 3.

[0067] It should be noted that the substrate 1 may also be a copper plate structure.

[0068] Different from other embodiments of the present disclosure, in the third embodiment of the present disclosure, as Figure 6 and Figure 7 As shown, the power device further includes a reinforcement structure 6 , which is installed in the first cavity 12 . The reinforcement structure 6 includes at least a plurality of support columns, and both ends of the support columns are respectively connected to two oppositely arranged enclosing panels 11 .

[0069] Specifically, if Figure 7 As shown, multiple support columns are spaced apart in the first cavity 12; the reinforcement structure 6 can be a support column integrally formed with the enclosing panel 11, or the support column and the enclosing panel 11 can be a separate structure. Of course, reinforcing ribs or diagonal support columns can also be provided as the reinforcement structure 6 to strengthen the structure of the enclosing panel 11.

[0070] In this embodiment, in order to ensure the structural stability of the substrate 1, as shown in FIG. Figure 7 As shown, a reinforcing structure 6 is provided in the first cavity 12, and the enclosing panels 11 that enclose the first cavity 12 are structurally reinforced or supported by the reinforcing structure 6, thereby improving the structural stability of the substrate 1 and preventing the substrate 1 from being deformed or damaged. The reinforcing structure 6 is composed of at least a plurality of support columns, and the two ends of the support columns can be respectively connected to the two oppositely arranged enclosing panels 11, so that the support columns and the two enclosing panels 11 form an I-shaped structure, further improving the support stability, and then ensuring the structural stability of the substrate 1.

[0071] Different from other embodiments of the present disclosure, in the fourth embodiment of the present disclosure, as Figure 8 As shown, there are a plurality of semiconductor modules 2 , and the plurality of semiconductor modules 2 are distributed on the substrate 1 at intervals.

[0072] Specifically, if Figure 8 As shown, there are three semiconductor modules 2 , which are evenly spaced. The types and functions of the multiple semiconductor modules 2 are the same, but may also be different or completely different.

[0073] In this embodiment, the number of semiconductor modules 2 welded on a substrate 1 is set to multiple, thereby expanding the integrated setting of semiconductor modules 2 of multiple types and functions on a single substrate 1. Moreover, the semiconductor module 2 is connected to the substrate 1 by high-temperature soldering. The miniaturized design of the semiconductor module 2 can effectively reduce the welding area between the semiconductor module 2 and the substrate 1. The reduction in the welding area can effectively reduce the porosity, improve the heat dissipation performance, ensure the welding quality, and is conducive to the release of welding internal stress, thereby improving welding stability.

[0074] Different from other embodiments of the present disclosure, in the fifth embodiment of the present disclosure, as Figure 9 As shown, a groove 111 is defined on the enclosing panel 11 , and the semiconductor module 2 is embedded in the groove 111 .

[0075] Specifically, if Figure 9 As shown, the cross-sectional shape of the opening of the groove 111 is the same as the cross-sectional shape of the semiconductor module 2, and the depth of the groove can be greater than, less than or equal to the thickness of the insulating layer 22. Figure 6 As shown, the cross-sectional shapes and sizes of the plurality of grooves 111 may be the same or different.

[0076] In this optional embodiment, if Figure 9 As shown, a groove 111 is provided on the enclosing panel 11, and the semiconductor module 2 can be embedded in the groove 111. With this arrangement, when welding, it is only necessary to weld the contact point between the edge of the groove 111 and the semiconductor module 2, which effectively reduces the welding area, reduces the porosity, improves the heat dissipation performance, ensures the welding quality, and is conducive to the release of welding internal stress and improves the welding stability; at the same time, the setting of the groove 111 can increase the contact area between the enclosing panel 11 and the semiconductor module 2, thereby improving the efficiency of heat transfer from the semiconductor module 2 to the enclosing panel 11, and thereby improving the heat dissipation performance of the power device prepared subsequently.

[0077] A first embodiment of the present disclosure provides a power module, which is made of the above-mentioned power device.

[0078] In the manufactured power module, there is no restriction on the presence or absence of material in the first cavity 12 of the power device.

[0079] Optionally, in the power module, a phase change medium is present in the first cavity 12 of the substrate 1 of the power device.

[0080] In this embodiment, after the power device is fabricated, the vacuum state of the first cavity 12 or the reducing gas in the first cavity 12 is released, and a phase change medium is filled into the first cavity 12 to form the power device into a power module. In other words, the power device in the above embodiment is a component in the process of fabricating a power module.

[0081] In this way, the phase change medium can be used to diffuse the heat received by the substrate 1 from the side welded to the semiconductor module 2 to the other side, ensuring the heat transfer effect of the substrate 1, facilitating the continued heat dissipation of the power device, and then effectively ensuring the heat dissipation efficiency of the power module.

[0082] Specifically, substrate 1 can be made of a variety of materials, including insulating temperature-varying plates, insulating phase-change heat pipes, and phase-change insulating materials in thermal interface materials. After substrate 1 and semiconductor module 2 are welded, the phase-change dielectric can be injected through the holes in substrate 1. After injection, the holes are sealed by welding or other methods.

[0083] The beneficial effects of the power module of this embodiment relative to the prior art are the same as those of the above-mentioned power device, and will not be described in detail here.

[0084] like Figure 10 and Figure 11 As shown, the power module in this embodiment further includes a first sealing member 14 provided on the power device. The phase change medium in the first cavity 12 is input through the first port 13 of the substrate 1 , and the first sealing member 14 seals the first port 13 .

[0085] Specifically, if Figure 10 As shown, the substrate 1 on the power device for preparing the power module may only have the first port 13, that is, the heat transfer plate 4 is not provided in the first cavity 12 of the substrate 1. Of course, as shown in FIG. Figure 11 As shown, the substrate 1 on the power device for preparing the power module may also have a first port 13 and a second port 15, that is, a heat transfer plate 4 is arranged in the first cavity 12 of the substrate 1, and the first port 13 and the second port 15 are used in conjunction with each other; the first sealing member 14 and the first port 13 can be integrally formed, that is, the first port 13 is directly welded and covered by welding to form a first sealing member 14 formed by solder accumulation, or it can be a split structure; the first port 13 can transmit both phase change medium and airflow. Of course, another port connected to the first cavity 12 can also be provided on the substrate 1, which is only used to transmit phase change medium, and the first port 13 is only used to transmit airflow.

[0086] In this optional embodiment, if Figure 10 and Figure 11 As shown, when preparing a power module from the above-mentioned power devices, the first port 13 for transmitting gas can be used to input a phase change medium into the first cavity 12, thereby improving the heat transfer effect of the substrate 1. After the phase change medium is input through the first port 13, the first sealing member 14 can be used to seal the first port 13 to ensure the working stability of the power module.

[0087] The first embodiment of the present disclosure further provides a heat dissipation system, including the above-mentioned power module.

[0088] The beneficial effects of the heat dissipation system of this embodiment relative to the prior art are the same as those of the above-mentioned power module, and will not be described in detail here.

[0089] like Figure 12 As shown, the heat dissipation system in the embodiment further includes a heat dissipation component 5 , which is connected to the substrate 1 of the power device of the power module.

[0090] Specifically, the heat dissipation component 5 can realize heat exchange between the power module and the outside world, and the heat dissipation method can be air cooling, liquid cooling or thermal siphon, etc. For example, the heat dissipation method of the heat dissipation component 5 is air cooling, and the heat dissipation component 5 can include air flow driving parts such as fans and fin heat sinks, etc., and the air flow output by the fan is used to dissipate heat. At the same time, the heat dissipation area can be effectively increased through the fin structure to improve the heat dissipation efficiency. Of course, the substrate 1 can be used as the substrate of the radiator of the heat dissipation component 5, or it can be fitted and fixed to the substrate, wherein the substrate 1 can be connected to the substrate of the radiator by clamping, welding, screw connection, etc. to enhance the heat dissipation capacity.

[0091] In this embodiment, in order to ensure the working stability of the power module, the substrate 1 of the power device of the power module is also connected to the heat dissipation component 5. After the substrate 1 receives the heat transferred by the semiconductor module 2, the heat can be diffused and transferred to the heat dissipation component 5. The heat dissipation component 5 dissipates the heat to an area far away from the semiconductor module 2, thereby meeting the heat dissipation needs of the semiconductor module 2 and ensuring the working stability of the power module.

[0092] The embodiments of the present disclosure further provide a power conversion device, including the above-mentioned power module, or including the above-mentioned heat dissipation system.

[0093] The beneficial effects of the power conversion device of this embodiment compared to the prior art are the same as those of the above-mentioned power module or heat dissipation system, and will not be repeated here.

[0094] Although the present disclosure is disclosed as above, the protection scope of the present disclosure is not limited thereto. Those skilled in the art may make various changes and modifications without departing from the spirit and scope of the present disclosure, and these changes and modifications will fall within the protection scope of the present disclosure.

Claims

1. A power device, characterized in that: The invention comprises a substrate (1) and a semiconductor module (2); the substrate (1) has a plurality of enclosing panels (11), and the plurality of enclosing panels (11) cooperate to enclose a first cavity (12); the semiconductor module (2) is welded on one of the enclosing panels (11); the power device is used to manufacture a power module, and the first cavity (12) of the power module is used to arrange a phase change medium.

2. The power device according to claim 1, wherein: During the welding process of the semiconductor module (2) and the enclosed panel (11), the first cavity (12) is in a vacuum state; or, a reducing gas is present in the first cavity (12).

3. The power device according to claim 2, characterized in that A first port (13) is provided on the substrate (1), and the first port (13) passes through the enclosing panel (11) and is in communication with the first cavity (12).

4. The power device according to claim 1, wherein: It also includes a heat transfer structure (3), which is located in the first cavity (12) and is thermally coupled to the plurality of enclosing panels (11).

5. The power device according to claim 4, characterized in that: It also includes a heat transfer plate (4), the heat transfer plate (4) is located in the first cavity (12), the heat transfer structure (3) is connected to the enclosing panel (11) and the heat transfer plate (4), respectively; the heat transfer plate (4) has a second cavity (41) inside, and the second cavity (41) has a phase change medium.

6. The power device according to claim 5, characterized in that A second port (15) is provided on the substrate (1), the second port (15) passing through the enclosing panel (11) and penetrating into the heat transfer plate (4), the second port (15) being used for inputting the phase change medium into the second cavity (41).

7. The power device according to any one of claims 1 to 6, characterized in that: It also includes a reinforcement structure (6), which is installed in the first cavity (12). The reinforcement structure (6) includes at least a plurality of support columns, and both ends of the support columns are respectively connected to the two oppositely arranged enclosing panels (11).

8. The power device according to any one of claims 1 to 6, characterized in that: There are a plurality of semiconductor modules (2), and the plurality of semiconductor modules (2) are distributed at intervals on the substrate (1).

9. The power device according to any one of claims 1 to 6, characterized in that: A groove (111) is provided on the enclosed panel (11), and the semiconductor module (2) is embedded in the groove (111).

10. A power module, characterized in that: Made from the power device according to any one of claims 1 to 9.

11. The power module according to claim 10, characterized in that: A phase change medium is provided in the first cavity (12) of the substrate (1) of the power device.

12. The power module according to claim 11, characterized in that: It also includes a first sealing member (14) provided on the power device, the phase change medium in the first cavity (12) is input through the first port (13) of the substrate (1), and the first sealing member (14) closes the first port (13).

13. A heat dissipation system, characterized in that: The invention comprises a heat dissipation component (5) and a power module according to any one of claims 10 to 12, wherein the heat dissipation component (5) is connected to a substrate (1) of a power device of the power module.

14. A power conversion device, characterized in that: The method comprises the power module according to any one of claims 10 to 12, or comprises the heat dissipation system according to claim 13.

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