Power module with efficient heat dissipation performance
By placing the chip upside down on the substrate and using conductive heat dissipation components or conductive heat dissipation parts for double-sided heat dissipation, the problem of poor heat dissipation in IGBT/SiC modules is solved, efficient heat dissipation and simplified production processes are achieved, and the performance and reliability of the device are improved.
Patent Information
- Application Number
- CN202422187042.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-06
- Publication Date
- 2025-09-26
- Estimated Expiration
- 2034-09-06
AI Technical Summary
Poor heat dissipation in IGBT/SiC modules leads to overheating, affecting device performance and reliability. Existing technologies have failed to effectively solve the heat dissipation problem by increasing the area of heat dissipation devices.
The chip is flipped on the substrate, and double-sided heat dissipation is achieved through a conductive heat dissipation component or conductive heat dissipation part, combined with an insulating protective layer covering to simplify the process flow.
It achieves efficient heat dissipation, improves the heat dissipation effect and reliability of the device, simplifies the production process and shortens the production cycle.
Smart Images
Figure CN223390548U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of integrated circuit manufacturing, in particular to a power module with high-efficiency heat dissipation performance. Background Art
[0002] Poor heat dissipation in IGBT / SiC modules can cause numerous hazards due to overheating. First, the device module itself has a certain power draw, which generates heat. Consequently, the overall performance and reliability of the IGBT / SiC module are affected by temperature. Failure rate figures are often compared using design rules. One design rule indicates that when operating above 65°C, the failure rate doubles for every 10°C increase in temperature. Therefore, heat dissipation in IGBT / SiC modules is crucial.
[0003] IGBT / SiC modules are high-power semiconductor devices. The power loss causes them to generate a lot of heat. For example, the junction temperature of the IGBT cannot exceed 125°C, and it is not suitable for long-term operation at high temperatures. Generally, the power supply of the IGBT module that has not been tested is large and the switching frequency is high, resulting in relatively large losses in the IGBT module device. If the heat is not dissipated in time, the junction temperature of the device will exceed 125°C. The IGBT module should not be operated at critical temperature for a long time. The heat dissipation of the IGBT module is poor, and the harm caused by overheating is that the IGBT is damaged and affects the normal operation of the entire machine.
[0004] IGBT / SiC module overheating may be caused by excessive current or high switching frequency, but the most direct cause is poor heat dissipation. To allow the module to transfer heat more efficiently, corresponding heat dissipation devices are added to allow heat to be transferred mainly for faster cooling. Therefore, the heat sink increases the heat dissipation area, but generally the heat dissipation area is only increased on one side of the chip, so the heat is only conducted through one side of the chip, and heat dissipation problems still exist. Utility Model Content
[0005] In response to the above technical problems, the purpose of this utility model patent is to provide a power module with high-efficiency heat dissipation performance, realize dual-channel heat dissipation, and the chip is directly flipped on the substrate with a simple process.
[0006] A power module with high heat dissipation performance, comprising a tube shell, a substrate, at least one chip and an insulating protective layer;
[0007] The substrate is disposed in the tube shell;
[0008] The chip is flipped on the substrate and electrically connected to the corresponding pins on the substrate;
[0009] The insulating protection layer is located in the tube shell and covers all chips on the substrate.
[0010] Optionally, it further includes a plurality of conductive heat dissipation components;
[0011] Each of the conductive heat dissipation components corresponds to a plurality of chips;
[0012] Each of the conductive heat dissipation components is electrically connected to the back surfaces of all corresponding chips;
[0013] All the conductive heat dissipation components are electrically connected to corresponding pins on the substrate.
[0014] Optionally, a plurality of conductive heat dissipating elements are provided in the tube shell;
[0015] Each conductive heat sink corresponds to a number of chips;
[0016] Each conductive heat dissipation element is electrically connected to the back surface of the corresponding chip.
[0017] Preferably, the conductive heat dissipation member is a copper sheet.
[0018] Preferably, the conductive heat dissipation element is a copper sheet.
[0019] Specifically, the chip is a combination of one or more of a transistor, an IGBT power chip, a SIC power chip, a GAN power chip, a MOSFET power chip, and a diode.
[0020] Optionally, one or more of passive components, active components and sensors are provided on the substrate according to electrical function requirements.
[0021] Specifically, the insulating protective layer is protective glue.
[0022] Compared with the prior art, the power module with high heat dissipation performance of the utility model has the following advantages:
[0023] (1) The chip is flipped on the substrate and can dissipate heat directly through the substrate; the back of the chip is connected to a conductive heat dissipation member or conductive heat dissipation part to generate electrical requirements, and dissipate heat through the conductive heat dissipation member or conductive heat dissipation part at the same time, thereby achieving the function of double-sided heat dissipation;
[0024] (2) The chip is directly flipped on the substrate, the process is simple, and there is no wire bonding. Conductive heat dissipation components or conductive heat dissipation parts can be used to connect the back of all chips and lead out electrodes. It has both electrical performance requirements and high heat dissipation effect. The process flow is short, the material variety is small, and the production cycle is short. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] Figure 1 This is a schematic structural diagram of a power module with high heat dissipation performance according to Example 1;
[0026] Figure 2Schematic diagram of the connection between the chip and the conductive heat dissipation member in Example 1;
[0027] Figure 3 This is a schematic structural diagram of a power module with high heat dissipation performance according to Example 2;
[0028] Figure 4 Schematic diagram of the connection between the chip and the conductive heat sink in Example 2. DETAILED DESCRIPTION
[0029] The specific implementation of the utility model patent is further described in detail below with reference to the accompanying drawings.
[0030] Example 1
[0031] In this embodiment, the chip is taken as a transistor or a diode as an example.
[0032] like Figure 1 As shown, a power module with high heat dissipation performance includes a tube shell 1, a substrate 2, a chip (transistor 3, diode 4) and an insulating protective layer (not shown in the figure);
[0033] The substrate 2 is disposed in the tube shell 1;
[0034] The chips (transistor 3 and diode 4) are all flipped upside down on the substrate 2 and electrically connected to the corresponding pins on the substrate 2;
[0035] The insulating protection layer is located inside the tube shell 1 and covers all chips on the substrate 2 .
[0036] In this embodiment, if Figure 2 As shown, the device also includes several conductive heat dissipation members 5; each conductive heat dissipation member 5 corresponds to several chips; each conductive heat dissipation member 5 is electrically connected to the back surface of all corresponding chips; and all conductive heat dissipation members 5 are electrically connected to corresponding pins on the substrate 2. After the chip is flipped, the conductive heat dissipation members 5 are used to directly make local electrical connections, and are directly connected to the corresponding electrodes on the substrate 2, and electrical leads can be drawn out through pins or terminals.
[0037] Furthermore, in this embodiment, the conductive heat dissipation member 5 is a copper sheet, which has better conductive and heat dissipation performance than traditional aluminum wire.
[0038] In addition, the chip is a combination of one or more of a transistor, an IGBT power chip, a SIC power chip, a GAN power chip, a MOSFET power chip, and a diode.
[0039] In this embodiment, one or more of passive components, active components and sensors are provided on the substrate 2 according to electrical function requirements, and whether to perform the above design can be determined according to actual needs.
[0040] In this embodiment, the insulating protective layer is protective glue.
[0041] The chip is flipped on the substrate 2 and can dissipate heat directly through the substrate 2; the back of the chip is connected to the conductive heat dissipation component 5 to generate electrical requirements, and dissipate heat through the conductive heat dissipation component 5 or the conductive heat dissipation part at the same time, thereby realizing the function of double-sided heat dissipation.
[0042] The preparation process is as follows:
[0043] S1. Making conductive circuits in the structure of substrate 2 and printing connection materials on the surface of the pins that need to be electrically connected;
[0044] S2. The chip is flip-flopped and mounted on the upper surface of the connection material to achieve electrical connection with the corresponding pins on the substrate 2;
[0045] S3. Connect the back of the chip with a conductive heat dissipation member. The conductive heat dissipation member 5 is electrically connected to the corresponding pins on the substrate 2. The conductive circuit on the substrate leads to electrodes through a metal conductive medium to achieve internal and external electrical connection.
[0046] S5. Fill the module with protective glue or use secondary plastic encapsulation to achieve overall protection of the internal structure, with the top surface of the metal conductive component located inside or outside the protective glue. Alternatively, use injection molding to protect the packaged device along with the passive components, active components, and sensors required for the function.
[0047] Example 2
[0048] In this embodiment, the chip is taken as a transistor or a diode as an example.
[0049] like Figure 3 and Figure 4 As shown, a power module with high heat dissipation performance is provided. A plurality of conductive heat sinks 6 are provided within a tube housing 1. Each conductive heat sink 6 corresponds to a plurality of chips (transistors 3 and diodes 4). Each conductive heat sink 6 is electrically connected to the back surface of the corresponding chip. The remaining technical features are the same as those of Example 1.
[0050] After the chips are flipped, the back sides of the multiple chips are directly connected and connected to the electrodes through the conductive heat sink 6. Designers can choose embodiment 1 or embodiment 2 according to actual needs.
[0051] The preferred embodiments of the present invention have been specifically described above, but the present invention is not limited to the described embodiments. Those skilled in the art may make various equivalent modifications or substitutions without violating the spirit of the present invention. These equivalent modifications or substitutions are all within the scope defined by the claims of this application.
Claims
1. A power module with high heat dissipation performance, characterized in that: It includes a tube shell, a substrate, at least one chip and an insulating protective layer; The substrate is disposed in the tube shell; The chip is flipped on the substrate and electrically connected to the corresponding pins on the substrate; The insulating protection layer is located inside the tube shell and covers all chips on the substrate; Also includes a number of conductive heat dissipation components; Each of the conductive heat dissipation components corresponds to a plurality of chips; Each of the conductive heat dissipation components is electrically connected to the back surfaces of all corresponding chips; All the conductive heat dissipation components are electrically connected to corresponding pins on the substrate; Alternatively, a plurality of conductive heat dissipating elements are provided in the tube shell; Each conductive heat sink corresponds to a number of chips; Each conductive heat dissipation element is electrically connected to the back surface of the corresponding chip.
2. A power module with high heat dissipation performance as claimed in claim 1, characterized in that: The conductive heat dissipation component is a copper sheet.
3. The power module with high heat dissipation performance according to claim 1, characterized in that: The conductive heat sink is a copper sheet.
4. The power module with high heat dissipation performance according to claim 1, characterized in that: The chip is a combination of one or more of a transistor, an IGBT power chip, a SIC power chip, a GAN power chip, a MOSFET power chip, and a diode.
5. A power module with high heat dissipation performance according to any one of claims 1 to 4, characterized in that: The substrate is provided with one or more of passive components, active components and sensors according to electrical function requirements.
6. The power module with high heat dissipation performance according to claim 1, characterized in that: The insulating protective layer is protective glue.