Wafer etching device

Abstract

The utility model discloses a wafer etching device, and relates to the technical field of semiconductor equipment. The wafer etching device comprises an etching chamber, a first gas inlet pipe and a gas outlet pipe, a bracket is arranged in the etching chamber, the bracket comprises a placement layer and an exhaust plate arranged at an interval with the placement layer, the placement layer comprises a plurality of clamping plates arranged at intervals, and a wafer can be placed on the plurality of clamping plates and clamped between the clamping plates and the exhaust plate; the substrate is used for placing wafers; a plurality of circles of exhaust pipelines are concentrically arranged on the exhaust plate, and a plurality of exhaust ports facing the wafer are uniformly distributed on the exhaust pipelines at intervals; the first gas inlet pipe is communicated with the gas exhaust pipeline and is used for injecting etching gas into the gas exhaust plate; and the air outlet pipe is communicated with the etching chamber. According to the wafer etching device, the etching gas concentration at each part in the chamber can be uniform, so that the etching rates at each part of the surface of the wafer are equal, and the etching uniformity and the product yield are improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor equipment, in particular to a wafer etching device. Background Art

[0002] In the manufacturing process of semiconductor devices, it is often necessary to etch the silicon dioxide layer of the wafer to form a specific structure. VHF (Vapor Hydrofluoric Acid) vapor phase etching technology can provide a relatively safe and efficient etching method. By injecting vaporized hydrogen fluoride vapor into the wafer placed in the process chamber, the hydrogen fluoride vapor reacts with the silicon dioxide layer on the wafer surface to produce silicon tetrafluoride gas and water, thereby achieving the etching of silicon dioxide.

[0003] Existing process chambers for vapor-phase etching of wafers typically have only one opening on the sidewall of the chamber for injecting hydrogen fluoride vapor. Therefore, the hydrogen fluoride concentration in the process chamber is higher near the opening, and the concentration decreases as the distance from the opening increases. This high hydrogen fluoride concentration has a significant impact on the wafer etching rate: the higher the hydrogen fluoride concentration, the faster the wafer etching rate. This results in uneven etching rates across the wafer surface, poor etching uniformity, and reduced product yield. Utility Model Content

[0004] The purpose of the utility model is to provide a wafer etching device, which can make the hydrogen fluoride concentration uniform at various locations in the chamber, thereby making the etching rate at various locations on the wafer surface equal, thereby improving etching uniformity and product yield.

[0005] The embodiment of the present utility model is achieved as follows:

[0006] In one aspect of the utility model, a wafer etching device is provided, comprising an etching chamber, a first air inlet pipe and an air outlet pipe; a bracket is provided in the etching chamber, the bracket comprises a placement layer and an exhaust plate spaced apart from the placement layer, the placement layer comprises a plurality of clamping plates spaced apart, the wafer can be placed on the plurality of clamping plates and clamped between the clamping plates and the exhaust plates; a plurality of circles of exhaust pipes are concentrically arranged on the exhaust plate, and a plurality of exhaust ports arranged towards the wafer are evenly spaced apart on the exhaust pipe; the first air inlet pipe is connected to the exhaust pipe for injecting etching gas into the exhaust plate; the air outlet pipe is connected to the etching chamber.

[0007] Optionally, the wafer etching device also includes a gas diversion component, the first gas inlet pipe is connected to the inlet of the gas diversion component, the gas diversion component includes multiple outlets, the outlets are respectively connected to the second gas inlet pipe, and the second gas inlet pipe is connected to the exhaust pipe of the exhaust plate.

[0008] Optionally, the exhaust duct includes a first duct and a second duct that are connected to each other, the first duct is arranged in a circumference, and the multiple exhaust ports are evenly spaced in the first duct; the second duct is connected to the second air inlet pipe.

[0009] Optionally, two circles of exhaust pipes are concentrically arranged on the exhaust plate; the first pipe of the exhaust pipe located in the outer circle includes two sub-pipes arranged at intervals, the sub-pipes are semicircular, and the two sub-pipes are respectively connected to the two second pipes.

[0010] Optionally, the bracket includes a support rod, multiple placement layers and multiple exhaust plates, and the multiple placement layers are stacked and spaced apart and fixedly connected to the support rod; the support rod is a hollow structure, and one end of the support rod is connected to the second air inlet pipe; the support rod has multiple openings spaced apart along the stacking direction of the multiple placement layers, and the second pipe of the exhaust plate is connected to the opening of the support rod.

[0011] Optionally, there are multiple support rods, and the multiple support rods are evenly distributed around the periphery of the exhaust plate.

[0012] Optionally, the orthographic projection outline of the exhaust plate along the first direction covers the orthographic projection outline of the card plate along the first direction, and the first direction is the arrangement direction of the exhaust plate and the placement layer.

[0013] Optionally, an exhaust plate is provided on the inner wall of the etching chamber, and one end of the exhaust pipe is connected to the exhaust plate.

[0014] Optionally, one end of the gas outlet pipe away from the etching chamber is connected to a vacuum pump.

[0015] Optionally, the gas outlet pipes include multiple ones, and the multiple gas outlet pipes are evenly distributed around the periphery of the etching chamber.

[0016] The beneficial effects of the utility model include:

[0017] The present application provides a wafer etching device, comprising an etching chamber, a first air inlet pipe, and an air outlet pipe; a support is provided in the etching chamber, the support comprising a placement layer and an exhaust plate spaced apart from the placement layer; the placement layer comprises a plurality of spaced-apart clamping plates, on which a wafer can be placed and clamped between the clamping plates and the exhaust plate, to support the wafer; a plurality of exhaust pipes are concentrically arranged on the exhaust plate, and a plurality of exhaust ports are evenly spaced apart on the exhaust pipes and arranged toward the wafer; the first air inlet pipe is connected to the exhaust pipe and is used to inject etching gas into the exhaust plate to ensure that the concentration of etching gas contacted by each part of the wafer is uniform, so that the etching rate of each part of the wafer is equal; the air outlet pipe is connected to the etching chamber to exhaust the gas in the etching chamber. The above-mentioned wafer etching device can make the etching gas concentration uniform throughout the chamber, thereby making the etching rate of each part of the wafer surface equal, thereby improving etching uniformity and product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0019] Figure 1 A cross-sectional view of a wafer etching device provided by an embodiment of the present utility model;

[0020] Figure 2 One of the top views of the exhaust plate of the wafer etching device provided in an embodiment of the present utility model;

[0021] Figure 3 A second top view of the exhaust plate of the wafer etching device provided by an embodiment of the present utility model;

[0022] Figure 4 A schematic structural diagram of a wafer etching device provided in an embodiment of the present invention.

[0023] Icons: 100-wafer etching device; 110-etching chamber; 111-exhaust plate; 120-first air inlet pipe; 130-air outlet pipe; 140-bracket; 141-cage; 142-exhaust plate; 1421-exhaust pipe; 1421a-first pipe; 1421b-second pipe; 1422-exhaust port; 143-sub-pipe; 144-support rod; 150-gas diversion assembly; 160-second air inlet pipe; 170-vacuum pump; a-first direction. DETAILED DESCRIPTION

[0024] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0025] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort are also within the scope of protection of the present invention.

[0026] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0027] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer" and the like, indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the utility model product is typically placed when in use. These terms are intended solely to facilitate the description of this utility model and to simplify the description, and are not intended to indicate or imply that the device or component referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this utility model. Furthermore, the terms "first," "second," and "third," etc., are used solely to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0028] Furthermore, terms such as "horizontal" and "vertical" do not necessarily mean that a component must be absolutely horizontal or overhanging, but rather that it can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but rather that it can be slightly tilted.

[0029] It should also be noted that, in the description of this utility model, unless otherwise expressly specified or limited, the terms "disposed," "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; direct connections, indirect connections through an intermediate medium, and internal connections between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.

[0030] Please refer to Figure 1 , this embodiment provides a wafer etching device 100, including an etching chamber 110, a first air inlet pipe 120 and an air outlet pipe 130; a bracket 140 is provided in the etching chamber 110, the bracket 140 includes a placement layer and an exhaust plate 142 spaced apart from the placement layer, the placement layer includes a plurality of spaced apart clamping plates 141, and wafers can be placed on the plurality of clamping plates 141 and clamped between the clamping plates 141 and the exhaust plate 142; a plurality of circles of exhaust pipes 1421 are concentrically arranged on the exhaust plate 142, and a plurality of exhaust ports 1422 are evenly spaced apart on the exhaust pipes 1421 and arranged toward the wafer; the first air inlet pipe 120 is connected to the exhaust pipe 1421 for injecting etching gas into the exhaust plate 142; the air outlet pipe 130 is connected to the etching chamber 110.

[0031] Specifically, if Figure 1As shown, the wafer etching apparatus 100 includes an etching chamber 110 having a closed accommodating cavity in the middle of the etching chamber 110. A support 140 is disposed in the accommodating cavity. The support 140 has a placement layer for placing wafers. The placement layer includes a plurality of spaced apart card plates 141. It should be noted that the present application does not impose any restrictions on the number of card plates 141. The minimum number of card plates 141 is two, so as to support opposite sides of the wafer respectively. When there are multiple placement layers, the multiple placement layers can be stacked at intervals to improve space utilization within the etching chamber 110.

[0032] The support 140 further includes an exhaust plate 142, which is arranged in a one-to-one correspondence with the placement layer. The exhaust plate 142 and the placement layer are stacked at intervals to reserve space for placing wafers. Figure 2 and Figure 3 As shown, the exhaust plate 142 is provided with multiple circles of exhaust pipes 1421. Multiple exhaust ports 1422 are evenly spaced and positioned toward the wafers. Etching gas entering the exhaust pipes 1421 from the first air inlet pipe 120 can be ejected through the exhaust ports 1422. When the number of circles of exhaust pipes 1421 exceeds two, the distance between adjacent exhaust pipes 1421 is preferably equal, ensuring uniform distribution of the multiple circles of exhaust pipes 1421. This arrangement ensures a uniform concentration of etching gas across the wafer, thereby improving the uniformity of the etching rate across the wafer surface and the product yield.

[0033] After the etching gas reacts with the silicon dioxide layer on the surface of the wafer to etch the wafer, the gas in the etching chamber 110 is discharged through the gas outlet pipe 130 .

[0034] It should be noted that, in one embodiment of the present application, first, Figure 4 As shown, in order to make the concentration of the etching gas that the wafer contacts as uniform as possible, the orthographic projection outline of the exhaust plate 142 along the first direction a covers the orthographic projection outline of the card plate 141 along the first direction a, so as to ensure that when the wafer is mounted on the card plate 141 of the placement layer, it can be exposed to the etching gas at all locations, wherein the first direction a is the setting direction of the exhaust plate 142 and the placement layer.

[0035] Second, if Figure 1As shown, in order to further increase the rate at which the gas in the etching chamber 110 is discharged from the gas outlet pipe 130, an exhaust plate 111 is provided on the inner wall of the etching chamber 110, and one end of the gas outlet pipe 130 is connected to the exhaust plate 111. Preferably, the exhaust plates 111 are provided on all four inner walls of the etching chamber 110. The exhaust plates 111 have evenly distributed exhaust holes, which can ensure uniform gas extraction throughout the etching chamber 110 to ensure consistency and uniformity in wafer etching. At the same time, the provision of the exhaust plates 111 can also control the direction of the airflow in the etching chamber 110 and the flow rate of the gas.

[0036] Third, if Figure 2 As shown, in order to further increase the rate at which the gas in the etching chamber 110 is discharged through the gas outlet pipe 130, a vacuum pump 170 is connected to one end of the gas outlet pipe 130 away from the etching chamber 110. Preferably, the wafer etching apparatus 100 can be provided with both an exhaust plate 111 and a vacuum pump 170. Through the coordinated operation of the exhaust plate 111 and the vacuum pump 170, the gas in the process chamber can be quickly and effectively extracted to help maintain the required low pressure or high vacuum state.

[0037] Fourth, if Figure 2 As shown, in order to ensure uniform gas extraction throughout the etching chamber 110 and thus ensure consistency and uniformity in wafer etching, a plurality of gas outlet pipes 130 are provided, and the plurality of gas outlet pipes 130 are evenly distributed around the periphery of the etching chamber 110. Preferably, four gas outlet pipes 130 are provided, and the four gas outlet pipes 130 are respectively connected to the four sidewalls of the etching chamber 110. Of course, the present application does not impose any limitation on the specific number of gas outlet pipes 130. The number of gas outlet pipes 130 may also be eight, with two gas outlet pipes 130 connected to each sidewall of the etching chamber 110, as long as the gas in the etching chamber 110 can be uniformly extracted.

[0038] In a preferred embodiment of the present application, the four inner walls of the wafer etching apparatus 100 are each provided with an exhaust plate 111, and four exhaust pipes 130 are also provided. One end of the exhaust pipe 130 is connected to the exhaust plate 111, and the other end is connected to a vacuum pump 170. The vacuum pump 170 can be started to exhaust the gas in the etching chamber 110 through the exhaust plate 111 and the exhaust pipe 130.

[0039] The wafer etching device 100 provided in the present application includes an etching chamber 110, a first air inlet pipe 120 and an air outlet pipe 130; a bracket 140 is provided in the etching chamber 110, the bracket 140 includes a placement layer and an exhaust plate 142 spaced apart from the placement layer, the placement layer includes a plurality of card plates 141 spaced apart, the wafer can be placed on the plurality of card plates 141 and clamped between the card plates 141 and the exhaust plate 142 to support the wafer; a plurality of exhaust pipes 1421 are concentrically arranged on the exhaust plate 142, and a plurality of exhaust ports 1422 are evenly spaced apart on the exhaust pipe 1421 and arranged toward the wafer; the first air inlet pipe 120 is connected to the exhaust pipe 1421, and is used to inject etching gas into the exhaust plate 142 to ensure that the concentration of the etching gas contacted by various parts of the wafer is uniform, so that the etching rate of various parts of the wafer is equal; the air outlet pipe 130 is connected to the etching chamber 110 to discharge the gas in the etching chamber 110. The wafer etching apparatus 100 can make the etching gas concentration uniform throughout the chamber, thereby making the etching rate equal at all locations on the wafer surface, thereby improving etching uniformity and product yield.

[0040] In one embodiment of the present application, Figure 1 As shown, the wafer etching device 100 also includes a gas diversion component 150, the first air inlet pipe 120 is connected to the inlet of the gas diversion component 150, the gas diversion component 150 includes multiple outlets, and the outlets are respectively connected to the second air inlet pipe 160, and the second air inlet pipe 160 is connected to the exhaust pipe 1421 of the exhaust plate 142.

[0041] Specifically, in order to make the concentration of etching gas contacted by each part of the wafer as uniform as possible, a plurality of exhaust pipes 1421 are provided on the exhaust plate 111. Therefore, in order to ensure that the exhaust rate of each exhaust pipe 1421 is equal, each exhaust pipe 1421 is connected to the first air inlet pipe 120 through a pipe. In order to ensure that the amount of gas entering each exhaust pipe 1421 from the first air inlet pipe 120 is the same, the wafer etching device 100 further includes a gas diversion component 150, such as Figure 1 As shown, the first air inlet pipe 120 is connected to the inlet of the gas diversion assembly 150, and the gas diversion assembly 150 also includes multiple outlets. Each outlet is connected to a second air inlet pipe 160, which is connected to the exhaust pipe 1421 of the exhaust plate 142. The etching gas entering the gas diversion assembly 150 through the first air inlet pipe 120 can be evenly discharged into the corresponding exhaust pipe 1421 through the second air inlet pipe 160 after being diverted by the gas diversion assembly 150.

[0042] Alternatively, as Figure 3As shown, exhaust duct 1421 includes a first duct 1421a and a second duct 1421b. First duct 1421a is arranged circumferentially, with multiple exhaust ports 1422 evenly spaced throughout. Second duct 1421b is connected to second air inlet pipe 160. Gas entering second duct 1421b from second air inlet pipe 160 enters first duct 1421a in an orderly fashion and is evenly discharged. To facilitate communication between second duct 1421b and second air inlet pipe 160, one end of second duct 1421b is connected to first duct 1421a, while the other end extends to the edge of exhaust plate 142 for external communication.

[0043] In one embodiment of the present application, two circles of exhaust pipes 1421 are concentrically arranged on the exhaust plate 142, and there is a preset interval between the two circles of exhaust pipes 1421 to ensure that all parts of the wafer surface can be evenly exposed to the etching gas. In order to facilitate the installation of the second pipe 1421b of the inner circle exhaust pipe 1421, the first pipe 1421a of the outer circle exhaust pipe 1421 needs to reserve space for the second pipe 1421b. Optionally, as Figure 3 As shown, the first pipe 1421a of the outer exhaust pipe 1421 includes two spaced-apart sub-pipes 143. Sub-pipes 143 are semicircular and together form a circular structure to ensure that all areas of the wafer surface are evenly exposed to the etching gas. The two sub-pipes 143 are respectively connected to the two second pipes 1421b to ensure that the etching gas can be evenly ejected from both sub-channels.

[0044] Of course, in addition to the aforementioned configuration of the first pipe 1421a located in the outer ring including two spaced-apart sub-pipes 143, the first pipe 1421a located in the outer ring may also be provided with an opening, so that the first pipe 1421a located in the outer ring has an incompletely enclosed circular structure (not shown in the figure), thereby reserving space for the second pipe 1421b. The second channel of the exhaust pipe 1421 located in the inner ring can extend from the opening into the inner ring to communicate with the first pipe 1421a located in the inner ring.

[0045] In one embodiment of the present application, Figure 4 As shown, the bracket 140 includes a support rod 144, multiple placement layers and multiple exhaust plates 142. The multiple placement layers are stacked and spaced apart and fixedly connected to the support rod 144; the support rod 144 is a hollow structure, and one end of the support rod 144 is connected to the second air inlet pipe 160; the support rod 144 is provided with multiple openings at intervals along the stacking direction of the multiple placement layers, and the second pipe 1421b of the exhaust plate 142 is connected to the opening of the support rod 144.

[0046] Specifically, if Figure 4As shown, the support 140 includes support rods 144, multiple exhaust plates 142, and multiple placement layers. The support rods 144 can be fixedly connected to the clamping plates 141 of the placement layers to provide support and stability for the clamping plates 141. The support rods 144 are hollow structures, one end of which is connected to the second air inlet pipe, and the etching gas can enter the support rods 144 through the second air inlet pipe 160.

[0047] The support rod 144 is provided with a plurality of openings (not shown in the figure) at intervals along the stacking direction of the plurality of placement layers. The number and arrangement positions of the openings correspond to the plurality of exhaust plates 142 one by one. Figure 4 As shown, the second pipe 1421b of the exhaust pipe 1421 of the exhaust plate 142 is connected to the interior of the support rod 144 through the opening. Through such an arrangement, each layer of the exhaust plate 142 can be fed with etching gas, thereby improving etching efficiency.

[0048] Optionally, to ensure the stability of the support 140 and to ensure that the etching gas is discharged uniformly and quickly from each layer of the exhaust plate 142, a plurality of support rods 144 are provided, and the plurality of support rods 144 are evenly spaced around the periphery of the exhaust plate 142. Preferably, the number of support rods 144 is consistent with the number of second pipes 1421b of the exhaust pipe 1421 of the exhaust plate 142.

[0049] The above description is merely an optional embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art will readily appreciate that the present invention is susceptible to various modifications and variations. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention.

[0050] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any appropriate manner without contradiction. In order to avoid unnecessary repetition, the present invention will not further describe various possible combinations.

Claims

1. A wafer etching device, characterized in that: The invention comprises an etching chamber (110), a first air inlet pipe (120) and an air outlet pipe (130); a support (140) is provided in the etching chamber (110), the support (140) comprises a placement layer and an exhaust plate (142) spaced apart from the placement layer, the placement layer comprises a plurality of spaced apart clamping plates (141), a wafer can be placed on the plurality of the clamping plates (141) and clamped between the clamping plates (141) and the exhaust plates (142); a plurality of exhaust pipes (1421) are concentrically arranged on the exhaust plate (142), a plurality of exhaust ports (1422) are spaced apart and arranged toward the wafer on the exhaust pipe (1421); the first air inlet pipe (120) is communicated with the exhaust pipe (1421) for injecting etching gas into the exhaust plate (142); the air outlet pipe (130) is communicated with the etching chamber (110).

2. The wafer etching device according to claim 1, wherein: The wafer etching device (100) further includes a gas diversion component (150), wherein the first gas inlet pipe (120) is connected to the inlet of the gas diversion component (150), and the gas diversion component (150) includes a plurality of outlets, each of which is connected to a second gas inlet pipe (160), and the second gas inlet pipe (160) is connected to the exhaust pipe (1421) of the exhaust plate (142).

3. The wafer etching device according to claim 2, characterized in that: The exhaust pipe (1421) comprises a first pipe (1421a) and a second pipe (1421b) that are connected to each other. The first pipe (1421a) is arranged in a circumferential manner, and a plurality of exhaust ports (1422) are evenly distributed in the first pipe (1421a). The second pipe (1421b) is connected to the second air inlet pipe (160).

4. The wafer etching device according to claim 3, characterized in that: Two circles of exhaust pipes (1421) are concentrically arranged on the exhaust plate (142); the first pipe (1421a) of the exhaust pipe (1421) located in the outer circle includes two spaced-apart sub-pipes (143), the sub-pipes (143) are semicircular, and the two sub-pipes (143) are respectively connected to the two second pipes (1421b).

5. The wafer etching device according to claim 3, wherein: The bracket (140) includes a support rod (144), a plurality of placement layers, and a plurality of exhaust plates (142), wherein the plurality of placement layers are stacked and spaced apart and fixedly connected to the support rod (144); the support rod (144) is a hollow structure, and one end of the support rod (144) is connected to the second air inlet pipe (160); the support rod (144) is provided with a plurality of openings spaced apart along the stacking direction of the plurality of placement layers, and the second pipe (1421b) of the exhaust plate (142) is connected to the opening of the support rod (144).

6. The wafer etching device according to claim 5, characterized in that: There are multiple support rods (144), and the multiple support rods (144) are evenly distributed at intervals around the periphery of the exhaust plate (142).

7. The wafer etching device according to any one of claims 1 to 6, characterized in that: The orthographic projection contour of the exhaust plate (142) along the first direction (a) covers the orthographic projection contour of the placement layer along the first direction (a), and the first direction (a) is the arrangement direction of the exhaust plate (142) and the placement layer.

8. The wafer etching device according to claim 1, wherein: An air pumping plate (111) is provided on the inner wall of the etching chamber (110), and one end of the air outlet pipe (130) is connected to the air pumping plate (111).

9. The wafer etching device according to claim 1, wherein: One end of the gas outlet pipe (130) away from the etching chamber (110) is connected to a vacuum pump (170).

10. The wafer etching device according to claim 1, wherein: The gas outlet pipes (130) include a plurality of gas outlet pipes (130), and the plurality of gas outlet pipes (130) are evenly distributed around the periphery of the etching chamber (110).

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