Gallium oxide single crystal growth furnace

Abstract

The utility model discloses a gallium oxide single crystal growth furnace which comprises a supporting base and a seed crystal, a furnace body is arranged on the top surface of the supporting base, a heater is arranged in the furnace body, a crucible is arranged at the bottom end in the furnace body, a mounting groove is formed in the center of the inner wall of the bottom end of the furnace body, the crucible is arranged in the mounting groove, and the seed crystal is arranged in the mounting groove. A mounting groove is formed in the top surface of the furnace body, a spherical groove located in the mounting groove is formed in the top surface of the supporting base, a spherical block matched with the spherical groove is fixedly arranged in the center of the bottom surface of the crucible, an annular partition plate located on the periphery of the crucible is arranged in the furnace body, a heating cavity is formed in the annular partition plate, and a plurality of heaters are evenly arranged in the heating cavity. Compared with the prior art, the crucible has the advantages that the spherical grooves are matched with the spherical blocks, so that the crucible can rotate at a constant speed, heat transfer of gallium oxide raw materials in the crucible is promoted, and the heat transfer efficiency is improved; the plurality of heaters are uniformly distributed around the crucible, and the power of the heaters is cooperatively controlled, so that the heating is uniform, and the efficiency is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of gallium oxide single crystals, in particular to a gallium oxide single crystal growth furnace. Background Art

[0002] Gallium oxide is a material with excellent optical, electrical, and chemical properties, and has broad application prospects in optoelectronic devices, sensors, and other fields. Gallium oxide single crystal growth begins by placing the gallium oxide raw material into a crucible. The crucible is then heated by a heater to reach the melting point of gallium oxide, causing the gallium oxide raw material to completely melt into a liquid state. A seed crystal is then added to the gallium oxide melt, and then the seed crystal is gradually pulled upward by a seed crystal pulling mechanism. As the seed crystal is pulled, the atoms in the gallium oxide melt are arranged according to the orientation of the seed crystal, forming a single crystal. When the crystal grows to the desired size, the seed crystal pulling is stopped, and the furnace temperature is gradually lowered to allow the crystal to cool slowly. When the crystal is completely cooled, it is removed from the furnace for subsequent processing and treatment.

[0003] However, traditional gallium oxide single crystal growth methods usually use a simple heating coil to heat the crucible. This method causes uneven heating of the crucible, resulting in low melting efficiency of the gallium oxide raw material and slow growth rate. Therefore, an efficient gallium oxide single crystal growth furnace is needed. Utility Model Content

[0004] The technical problem to be solved by the utility model is that a single heating method causes uneven heating which affects the growth rate, and an efficient gallium oxide single crystal growth furnace is provided.

[0005] In order to solve the above technical problems, the technical solution provided by the utility model is: a gallium oxide single crystal growth furnace, comprising a supporting base and a seed crystal, the top surface of the supporting base is provided with a furnace body, the furnace body is provided with a heater, the bottom end of the furnace body is provided with a crucible, the supporting base is provided with a pulling mechanism for matching the seed crystal, the top surface of the furnace body is provided with a cover plate, the center of the cover plate is connected to a through hole for matching the seed crystal, the inner wall of the furnace body is provided with a cooling plate located above the crucible, the center of the inner wall of the bottom end of the furnace body is provided with a mounting groove, the crucible is arranged in the mounting groove, the top surface of the supporting base is provided with a spherical groove located in the mounting groove, the center of the bottom surface of the crucible is fixed with a spherical block matching the spherical groove, the furnace body is provided with an annular partition located around the crucible, a heating cavity is provided in the annular partition, a plurality of heaters are evenly arranged in the heating cavity, and heat conduction holes are evenly connected on the annular partition.

[0006] As an improvement, a plurality of hydraulic telescopic rods are hingedly provided in the mounting groove and located around the spherical groove. The hydraulic telescopic rods are evenly distributed around the spherical groove. The other end of the hydraulic telescopic rod is hinged to the bottom surface of the crucible, which facilitates the adjustment of the crucible to rotate at a uniform speed, thereby ensuring uniform heating and improving efficiency.

[0007] As an improvement, the cover plate is screwed and fixed to the top surface of the furnace body. A rotating rod is provided on the top surface of the cover plate, and a rotating motor is provided on the bottom surface of the cover plate to drive the rotating rod. A sealing baffle is fixed on the rotating rod to match the through hole, which can reduce heat overflow and improve efficiency.

[0008] As an improvement, a temperature sensor is provided on the inner wall of the furnace body, and a temperature controller electrically connected to the temperature sensor, heater and refrigeration plate is fixed on the outer wall of the furnace body to facilitate precise control of the temperature.

[0009] As an improvement, the pulling mechanism includes a support plate located on the outer wall of the support base, an adjustment slot is provided through the support plate, a threaded screw is provided for vertical rotation in the adjustment slot, a lifting motor for driving the threaded screw is provided on the support plate, an adjustment block is provided on the threaded screw for matching and sliding connection with the adjustment slot, an extension rod extending to the top of the furnace body is fixed on the top surface of the adjustment block, and the other end of the extension rod is connected to a load-bearing plate located directly above the furnace body, the seed crystal is arranged on the bottom surface of the load-bearing plate, and the seed crystal extends into the furnace body through the through hole to cooperate with the smooth unloading operation of the crystal.

[0010] The advantages of the present invention over the prior art are that: a rotating mechanism is provided so that the crucible can rotate at a uniform speed, and the gallium oxide raw material is stirred and mixed in the crucible under the action of centrifugal force, thereby increasing the contact area between the gallium oxide raw material and the heater, promoting heat transfer of the gallium oxide raw material in the crucible, and thus improving the heat transfer efficiency;

[0011] Use multiple heaters evenly distributed around the crucible, and control the power of the heaters so that the crucible can be heated evenly, thereby achieving uniform heating and improving efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is the first stereoscopic diagram of a gallium oxide single crystal growth furnace of the present invention.

[0013] Figure 2 This is the second stereoscopic view of the gallium oxide single crystal growth furnace of the present invention.

[0014] Figure 3 It is a cross-sectional perspective view of a gallium oxide single crystal growth furnace of the present invention.

[0015] Figure 4 yes Figure 3Schematic diagram of the structure of part A.

[0016] As shown in the figure: 1. Support base; 2. Seed crystal; 3. Furnace body; 4. Heater; 5. Crucible; 6. Pulling mechanism; 7. Cover plate; 8. Through hole; 9. Refrigeration plate; 10. Mounting slot; 11. Spherical slot; 12. Spherical block; 13. Annular partition; 14. Heating cavity; 15. Heat conduction hole; 16. Hydraulic telescopic rod; 17. Rotating rod; 18. Rotating motor; 19. Sealing baffle; 20. Temperature sensor; 21. Temperature controller; 22. Support plate; 23. Adjusting slot; 24. Threaded screw; 25. Lifting motor; 26. Adjusting block; 27. Extension rod; 28. Load-bearing plate. DETAILED DESCRIPTION

[0017] The present invention will be described in further detail below with reference to the accompanying drawings.

[0018] Example 1

[0019] Combined with attachment Figure 1 and 3 -4 shows a gallium oxide single crystal growth furnace, comprising a support base 1 and a seed crystal 2, wherein the top surface of the support base 1 is provided with a furnace body 3, a heater 4 is provided in the furnace body 3, a crucible 5 is provided at the bottom end of the furnace body 3, a pulling mechanism 6 for cooperating with the seed crystal 2 is provided on the support base 1, a cover plate 7 is provided on the top surface of the furnace body 3, a through hole 8 for cooperating with the seed crystal 2 is provided in the center of the cover plate 7, a cooling plate 9 is provided on the inner wall of the furnace body 3 above the crucible 5, a mounting groove 10 is provided in the center of the inner wall at the bottom end of the furnace body 3, the crucible 5 is arranged in the mounting groove 10, a spherical groove 11 is provided on the top surface of the support base 1, a spherical block 12 matching the spherical groove 11 is fixedly provided in the center of the bottom surface of the crucible 5, and a plurality of hydraulic telescopic rods 16 located around the spherical groove 11 are hingedly provided in the mounting groove 10. , the hydraulic telescopic rod 16 is evenly distributed around the spherical groove 11, and the other end of the hydraulic telescopic rod 16 is hinged to the bottom surface of the crucible 5. The furnace body 3 is provided with an annular partition 13 located around the crucible 5, and a heating cavity 14 is provided in the annular partition 13. The heater 4 is evenly arranged in the heating cavity 14. A plurality of heat conduction holes 15 are evenly connected on the annular partition 13. The cover plate 7 is screwed and fixed to the top surface of the furnace body 3. A rotating rod 17 is provided on the top surface of the cover plate 7 for rotation. A rotating motor 18 for driving the rotating rod 17 is provided on the bottom surface of the cover plate 7. A sealing baffle 19 that cooperates with the through hole 8 is fixed on the rotating rod 17. A temperature sensor 20 is provided on the inner wall of the furnace body 3, and a temperature controller 21 that is electrically connected to the temperature sensor 20, the heater 4 and the cooling plate 9 is fixed on the outer wall of the furnace body 3;

[0020] With the above structure, the gallium oxide raw material is first placed into the crucible 5 through the furnace body 3. Then, the cover plate 7 is closed and the rotating motor 18 drives the sealing baffle 19 to seal the through hole 8. Then, the temperature controller 21 controls the activation of the multiple heaters 4. Heat is evenly heated through the heat conducting holes 15 to heat the crucible 5. The heating temperature is adjusted by the temperature sensor 20 to reach the melting point of gallium oxide. The hydraulic telescopic rod 16 is sequentially extended and contracted, so that the crucible 5 can swing in a circular motion under the cooperation of the spherical block 12 and the spherical groove 11. The gallium oxide raw material is evenly heated, thereby completely melting the gallium oxide raw material into a liquid state.

[0021] The motor 18 is rotated to control the sealing baffle 19 to move away from the through-hole 8. Then, the pulling mechanism 6 adds the seed crystal 2 to the gallium oxide melt in the furnace body 3 through the through-hole 8. The seed crystal 2 is then gradually pulled upward by the pulling mechanism 6. As the seed crystal 2 is pulled, the atoms in the gallium oxide melt are arranged according to the orientation of the seed crystal 2, forming a single crystal. When the crystal grows to the desired size, the pulling of the seed crystal 2 is stopped, and the temperature of the furnace body 3 is gradually lowered by the temperature sensor 20 in conjunction with the refrigeration plate 9, so that the crystal is slowly cooled. When the crystal is completely cooled, the pulling mechanism 6 removes it from the furnace body 3.

[0022] Example 2

[0023] Based on the first embodiment, combined with the Figure 2 As shown, the pulling mechanism 6 includes a support plate 22 located on the outer wall of the support base 1, an adjusting slot 23 is penetrated by the support plate 22, a threaded screw 24 is vertically rotated in the adjusting slot 23, a lifting motor 25 for driving the threaded screw 24 is provided on the support plate 22, and an adjusting block 26 is provided on the threaded screw 24 in a matching threaded connection with the adjusting slot 23 and in a matching sliding connection. An extension rod 27 extending to the top of the furnace body 3 is fixed on the top surface of the adjusting block 26, and the other end of the extension rod 27 is connected to a bearing plate 28 located just above the furnace body 3. The seed crystal 2 is arranged on the bottom surface of the bearing plate 28, and the seed crystal 2 extends into the furnace body 3 through the through hole 8;

[0024] Through the above structure, by turning on the lifting motor 25 to drive the threaded screw 24 to rotate, the adjustment block 26 can push the seed crystal 2 to move into the crucible 5 to work. After crystallization, the lifting motor 25 drives the threaded screw 24 to rotate in the opposite direction, and the crystal can be taken out.

[0025] During the specific implementation of the present invention, the gallium oxide raw material is first placed into the crucible 5 through the furnace body 3. Then, the cover plate 7 is closed and the rotating motor 18 drives the sealing baffle 19 to seal the through hole 8. Then, the temperature controller 21 controls the activation of the multiple heaters 4. Heat is evenly heated through the heat conducting holes 15 to heat the crucible 5. The heating temperature is adjusted by the temperature sensor 20 to reach the melting point of gallium oxide. The hydraulic telescopic rod 16 is sequentially extended and contracted, so that the crucible 5 can swing in a circular motion under the cooperation of the spherical block 12 and the spherical groove 11. The gallium oxide raw material is evenly heated, thereby completely melting the gallium oxide raw material into a liquid state.

[0026] The rotating motor 18 controls the sealing baffle 19 to move away from the through hole 8. By turning on the lifting motor 25 to drive the threaded screw 24 to rotate, the adjusting block 26 can push the seed crystal 2 to move into the crucible 5 to work, and then the lifting motor 25 drives the threaded screw 24 to rotate in the opposite direction, gradually pulling the seed crystal 2 upward. As the seed crystal 2 is pulled, the atoms in the gallium oxide melt will be arranged according to the orientation of the seed crystal 2 to form a single crystal. When the crystal grows to the required size, the pulling of the seed crystal 2 is stopped, and the temperature of the furnace body 3 is gradually lowered through the temperature sensor 20 and the refrigeration plate 9 to allow the crystal to cool slowly. When the crystal is completely cooled, the lifting motor 25 works to remove it from the furnace body 3.

[0027] The above description of the present invention and its embodiments is non-limiting. The drawings show only one embodiment of the present invention, and the actual structure is not limited thereto. In short, if a person skilled in the art is inspired by the above, and does not deviate from the purpose of the present invention, without inventive design, a structure and embodiment similar to the technical solution should fall within the scope of protection of the present invention.

Claims

1. A gallium oxide single crystal growth furnace, comprising a support base (1) and a seed crystal (2), wherein a furnace body (3) is provided on the top surface of the support base (1), a heater (4) is provided in the furnace body (3), a crucible (5) is provided at the bottom end of the furnace body (3), a pulling mechanism (6) for cooperating with the seed crystal (2) is provided on the support base (1), a cover plate (7) is provided on the top surface of the furnace body (3), a through hole (8) for cooperating with the seed crystal (2) is provided in the center of the cover plate (7), a cooling plate (9) is provided on the inner wall of the furnace body (3) and is located above the crucible (5), and is characterized in that: A mounting groove (10) is provided at the center of the inner wall at the bottom end of the furnace body (3), the crucible (5) is located in the mounting groove (10), the top surface of the support base (1) is provided with a spherical groove (11) located in the mounting groove (10), a spherical block (12) matching the spherical groove (11) is fixedly provided at the center of the bottom surface of the crucible (5), an annular partition (13) is provided around the crucible (5) in the furnace body (3), a heating cavity (14) is provided in the annular partition (13), a plurality of heaters (4) are evenly arranged in the heating cavity (14), and heat conduction holes (15) are evenly connected on the annular partition (13).

2. The gallium oxide single crystal growth furnace according to claim 1, characterized in that: A plurality of hydraulic telescopic rods (16) are hingedly provided in the installation groove (10) and are located around the spherical groove (11). The hydraulic telescopic rods (16) are evenly distributed around the spherical groove (11), and the other ends of the hydraulic telescopic rods (16) are hingedly connected to the bottom surface of the crucible (5).

3. The gallium oxide single crystal growth furnace according to claim 1, characterized in that: The cover plate (7) is screwed and fixed on the top surface of the furnace body (3); a rotating rod (17) is rotatably provided on the top surface of the cover plate (7); a rotating motor (18) for driving the rotating rod (17) is provided on the bottom surface of the cover plate (7); and a sealing baffle (19) is fixed on the rotating rod (17) and matches the through hole (8).

4. The gallium oxide single crystal growth furnace according to claim 1, characterized in that: The inner wall of the furnace body (3) is provided with a temperature sensor (20), and the outer wall of the furnace body (3) is fixedly provided with a temperature controller (21) electrically connected to the temperature sensor (20), the heater (4) and the refrigeration plate (9).

5. The gallium oxide single crystal growth furnace according to claim 1, characterized in that: The lifting mechanism (6) includes a support plate (22) located on the outer wall of the support base (1), an adjustment groove (23) is provided on the support plate (22), a threaded screw (24) is provided in the adjustment groove (23) for vertical rotation, a lifting motor (25) is provided on the support plate (22) for driving the threaded screw (24), an adjustment block (26) is provided on the threaded screw (24) and is slidably connected to the adjustment groove (23), an extension rod (27) extending to the top of the furnace body (3) is fixed on the top surface of the adjustment block (26), and the other end of the extension rod (27) is connected to a load-bearing plate (28) located directly above the furnace body (3), the seed crystal (2) is arranged on the bottom surface of the load-bearing plate (28), and the seed crystal (2) extends into the furnace body (3) through the through hole (8).

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