Assembling structure capable of controlling deformation at high temperature and high pressure
By adopting a controllable deformation assembly structure in the six-sided top press and utilizing the inverse piezoelectric effect of the PZT piezoelectric ceramic block to achieve secondary extrusion deformation of the sample, the problem that the six-sided top press cannot achieve controllable secondary deformation of the sample is solved, and the material grain refinement and performance improvement are achieved.
Patent Information
- Application Number
- CN202422946782.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-02
- Publication Date
- 2025-10-10
- Estimated Expiration
- 2034-12-02
AI Technical Summary
The existing six-sided top press cannot achieve controllable secondary deformation of samples under high temperature and high pressure, which limits the grain refinement and performance improvement of the material.
A controllable deformation assembly structure is adopted, and the inverse piezoelectric effect of the PZT piezoelectric ceramic block is used to achieve secondary extrusion deformation of the sample through voltage control. Combined with the surrounding block, heating component and pressure transmission protection tube design, uniform pressure transmission and material stability are ensured.
The material can achieve controllable secondary deformation under high temperature and high pressure, significantly refining the grain structure to submicron or nanometer level, and improving the mechanical properties and performance of the material.
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Figure CN223417219U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of superhard material synthesis, in particular to an assembly structure capable of controllable deformation under high temperature and high pressure. Background Art
[0002] Common high-pressure generators used in high-temperature and high-pressure experiments include the diamond anvil cell (DAC), large-cavity press (LVP), and dynamic high-pressure shockwave devices. While the DAC can generate static high pressures up to hundreds of gigapascals (GPa), its inherent limitations preclude its application for synthesizing large samples. Therefore, compared to the diamond anvil cell (DAC) press, the LVP offers a larger chamber volume, facilitating the research of large-volume materials and meeting the demands of industrial production.
[0003] The 6-8 press commonly used in large cavity presses (LVPs) and domestically produced six-sided top presses each have their own advantages and disadvantages. Compared to the 6-8 press, another type of large cavity press commonly used in high-pressure experiments, the domestically produced six-sided top press uses a synthetic block that is easier to process and assemble, with faster pressure ramp rates, shorter experimental cycles, and a wider range of material applicability. In the process of synthesizing new materials using a six-sided top press, the following synthetic block pattern is generally used: by applying pressure to the cubic synthetic block in six directions and applying electricity in two directions, a high-pressure ultrahigh-pressure environment is generated inside the synthetic block, enabling the synthesis of a series of material products, including artificial diamond single crystals and cubic boron nitride.
[0004] SPD technology is currently a commonly used technique for preparing ultrafine-grained (<1μm) materials in a relatively efficient and simple manner. Its characteristic is that it introduces large strains during the deformation process. SPD technology can significantly refine the grain size of materials and improve material properties. However, the equipment currently capable of applying SPD technology generally has shortcomings such as high cost, long cycle time, and low efficiency, which in turn limits the application of SPD technology in high-pressure and high-temperature experiments. Taking the six-sided top press as an example, the six-sided top press usually only deforms the sample once and rarely achieves secondary deformation of the sample. Therefore, there is an urgent need for a method to simply and effectively apply SPD technology to the six-sided top press.
[0005] Currently, severe plastic deformation (SPD) is used to re-introduce large strain under high pressure, causing the material to undergo severe plastic deformation. This results in grain refinement, microstructure homogenization, and fragmentation and redistribution of secondary phases. For example, the original grains are drastically broken up and refined, resulting in a submicron or even nanoscale fine-grained structure. Grain refinement can significantly improve the material's mechanical properties, such as hardness, tensile strength, and toughness. Achieving secondary deformation under high pressure can lead to new material properties. For example, during high-pressure torsion, the material undergoes not only axial compression but also shear deformation. This combined deformation mode helps to achieve a more uniform microstructure within the material. As the equivalent strain increases, the shear effect within the material also increases, leading to a more homogenized microstructure. This homogenized microstructure improves the material's overall performance and reduces performance anisotropy. In summary, high-pressure torsion can effectively refine grains and homogenize the microstructure, significantly improving mechanical properties such as hardness, tensile strength, and elongation. It also induces nanocrystallization of amorphous alloys, improving the material's microstructure and specific properties.
[0006] The pyrophyllite block assembly method commonly used in domestic six-sided top presses involves symmetrically placing a composite pyrophyllite tube, graphite sheet, molybdenum sheet, and steel cap within a hollow pyrophyllite block, sequentially from the inside out. The composite pyrophyllite tube contains a graphite tube, which is then filled with a small boron nitride tube, boron nitride sheet, and magnesium oxide plug, sequentially from the inside out. This assembly method applies pressure to the hollow pyrophyllite block in six directions and applies electricity in two directions, relying on the molybdenum sheet and the outer metal of the steel cap for electrical conductivity. Due to design limitations, this assembly method relies solely on the pressure applied by the six-sided top press, which is transmitted through the pyrophyllite to axially compress the sample, making it impossible to achieve controlled secondary deformation of the sample. Furthermore, due to assembly requirements, gaps are left between the components of the block, preventing a highly enclosed space. Utility Model Content
[0007] In order to overcome the defects of the above-mentioned prior art, the present invention provides an assembly structure with controllable deformation under high temperature and high pressure, which can realize controllable high-pressure secondary deformation of the sample, further refine the material grains, and improve its mechanical properties, corrosion resistance and other properties.
[0008] The utility model provides an assembly structure with controllable deformation under high temperature and high pressure, including an enclosing portion, a first cavity is provided in the enclosing portion, a heating component is provided in the first cavity, the outer wall of the heating component is in contact with the inner wall of the first cavity, a second cavity is provided in the heating component, a sample placement unit is provided in the second cavity, the outer wall of the sample placement unit is in contact with the inner wall of the second cavity, a third cavity for placing a sample is provided in the sample placement unit, a first voltage control component is provided on the sample placement unit, and a second voltage control component is provided on the heating component.
[0009] Compared with the existing technology, the present invention redesigns an assembly structure that can be controlled to deform under high temperature and high pressure. It has two PZT piezoelectric ceramic blocks inside. Different voltages can be applied to the PZT piezoelectric ceramic blocks through the electric couples on both sides of the PZT piezoelectric ceramic blocks. According to the principle of the inverse piezoelectric effect, the PZT piezoelectric ceramic blocks can be controlled to deform. The sample is subjected to secondary extrusion deformation under high pressure conditions through the controllable deformation of the ceramic blocks, causing the material to undergo plastic deformation under quasi-hydrostatic pressure conditions, solving the problem of the sample not being able to undergo controllable secondary deformation when pressurized by a six-sided top press. This deformation method can better refine the grain structure inside the material, even to the submicron or nanometer level, thereby significantly improving the mechanical properties and performance of the material, and can meet the synthetic pressure requirements of materials such as micron-level polycrystalline diamond and high-grade superhard composite materials.
[0010] In a possible embodiment, the enclosing portion includes an enclosing block with a square cross-section, a through first cylindrical cavity is provided at the center of the enclosing block, pressure blocks are provided at both ends of the first cylindrical cavity, and a first cavity is formed between the enclosing block and the two pressure blocks.
[0011] Compared with the existing technology, the square enclosing block design adopted in this application provides good structural stability and strength, can withstand the high pressure from the six-sided top press, and ensure that the entire assembly structure remains intact under high-pressure environment. The closed cavity (first cavity) formed between the pressure blocks and the enclosing blocks at both ends can effectively fix the internal components, reduce the displacement caused by external pressure, and increase the stability of the overall structure.
[0012] In a possible implementation, the material of the surrounding block is pyrophyllite, and the material of the pressing block is tungsten carbide or zirconium dioxide.
[0013] Compared with the existing technology, this application uses a surrounding block made of talc because talc has good high-temperature resistance, can maintain structural stability in a high-temperature environment, will not soften or melt, and is suitable for high-temperature and high-pressure synthesis experiments; and uses tungsten carbide or zirconium dioxide blocks because tungsten carbide has a melting point of 2870 degrees, a boiling point of 6000 degrees, a hardness similar to that of diamond, and a Vickers hardness of up to 1800HV. It is a good conductor of electricity and heat, and can effectively help the pressure applied by piezoelectric ceramics act on one side of the sample.
[0014] In one possible embodiment, the heating component includes a heating tube located in the first cavity, a pressure transmission protection tube is provided on the outer sleeve of the heating tube, the outer wall of the pressure transmission protection tube is abutted against the inner wall of the first cavity, a second cylindrical cavity is provided in the heating tube, piezoelectric ceramics are respectively provided at both ends of the second cylindrical cavity, a second cavity is formed between the heating tube and the two piezoelectric ceramics, and the sample placement unit is located in the second cavity.
[0015] Compared with the prior art, the present application adopts the above-mentioned structure to make the outer wall of the pressure transmission protection tube abut against the inner wall of the first cavity, ensuring that the pressure is evenly transmitted from the outside to the heating tube, and then to the sample placement unit, avoiding local overpressure or underpressure. The pressure transmission protection tube not only protects the heating tube from the influence of external high pressure, but also effectively transmits pressure, ensuring that the pressure is evenly distributed to the sample placement unit.
[0016] In a possible implementation, the heating tube is made of graphite, the pressure transmission protection tube is made of magnesium oxide or dolomite, and the piezoelectric ceramic is made of PTZ piezoelectric ceramic.
[0017] Both magnesium oxide and dolomite have high temperature resistance and can maintain structural stability at high temperatures without softening or melting. Both materials are excellent insulators and can effectively prevent current leakage, ensuring the safe operation of heating components and voltage control components.
[0018] In one possible embodiment, the sample placement unit includes an insulating cylindrical tube located in the second cavity, a third cylindrical cavity with openings at both ends is provided in the insulating cylindrical tube, the outer wall of the insulating cylindrical tube abuts against the inner wall of the second cavity, and insulating protective sheets are respectively provided at the openings, and a third cavity for placing the sample is formed between the insulating cylindrical tube and the two insulating protective sheets.
[0019] Compared with existing technologies, the present invention redesigns an assembly structure capable of controlled deformation under high temperature and high pressure. It contains two PZT piezoelectric ceramic blocks. Different voltages can be applied to the PZT piezoelectric ceramic blocks via the electric couples on either side of the blocks. This controllable deformation of the PZT piezoelectric ceramic blocks is achieved based on the principle of the inverse piezoelectric effect. This controlled deformation of the ceramic blocks then subjects the sample to secondary extrusion deformation under high pressure, causing the material to undergo plastic deformation under quasi-hydrostatic pressure. This deformation method can further refine the material's internal grain structure, even to the submicron or nanometer level, significantly improving the material's mechanical properties and usability. It can meet the synthetic pressure requirements for materials like micron-sized polycrystalline diamond and high-grade superhard composite materials.
[0020] In a possible implementation, the insulating cylindrical tube and the insulating protection sheet are both made of boron nitride.
[0021] Compared with the existing technology, the utility model selects boron nitride as the material for the insulating cylindrical tube and the insulating protective sheet because boron nitride has a very high melting point (about 3000°C) and can maintain structural stability in extremely high temperature environments without melting or decomposition. Boron nitride has extremely high resistivity and is an excellent insulating material that can effectively prevent current leakage and ensure the safe operation of the heating component and the voltage control component.
[0022] In one possible embodiment, the first voltage control component includes a first positive couple and a first negative couple, and the first positive couple and the first negative couple respectively pass through the surrounding portion, the heating component and are electrically connected to the sample placement unit, and the second voltage control component includes a second positive couple and a second negative couple, and the second positive couple and the second negative couple respectively pass through the surrounding portion and are electrically connected to the heating component.
[0023] Compared with the existing technology, this application utilizes the inverse piezoelectric effect of PZT piezoelectric ceramics themselves, controls the voltage at both ends of PZT piezoelectric ceramics through the electric couples on both sides, so that PZT piezoelectric ceramics can achieve controllable deformation, and uses the controllable deformation of PZT piezoelectric ceramics to apply another pressure to the sample, causing the sample to deform secondary.
[0024] In one possible embodiment, the diameters of the first positive couple, the first negative couple, the second positive couple, and the second negative couple are all 0.2 mm, and an insulating protective layer is provided on the outside of the first positive couple, the first negative couple, the second positive couple, and the second negative couple, and the inner diameter of the insulating protective layer is 0.2 mm and the outer diameter is 0.4 mm.
[0025] Compared with the prior art, the diameter of the galvanic couple of the present application can be selected as 0.2 mm or other sizes, and the insulating protective layer arranged on the outside of each galvanic couple provides double protection, ensuring that the galvanic couple will not short-circuit or leak in high voltage and high temperature environments. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] Figure 1 A cross-sectional view of an assembly structure capable of controlled deformation under high temperature and high pressure;
[0027] Figure 2 is a schematic diagram of the galvanic couple structure;
[0028] Figure 3 Schematic diagram of the installation structure of the assembly structure of the utility model with controllable deformation under high temperature and high pressure in a six-sided top press (I);
[0029] Figure 4 This is a schematic diagram (2) of the installation structure of the assembly structure of the utility model with controllable deformation under high temperature and high pressure in a six-sided top press.
[0030] Description of reference numerals:
[0031] 1. Enclosing block, 2. Pressing block, 3. Heating tube, 4. Sample, 5. Pressure transmission protection tube, 6. Insulating protection sheet, 7. Insulating cylindrical tube, 81. First positive couple, 82. First negative couple, 83. Second positive couple, 84. Second negative couple, 9. Piezoelectric ceramics. DETAILED DESCRIPTION
[0032] First, those skilled in the art should understand that these embodiments are merely used to explain the technical principles of the embodiments of the present application and are not intended to limit the scope of protection of the embodiments of the present application. Those skilled in the art may adjust them as needed to suit specific application scenarios.
[0033] In the description of the embodiments of this application, it should be noted that, unless otherwise specified or limited, the terms "connected" and "connection" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium. Those skilled in the art will understand the specific meanings of the above terms in the embodiments of this application based on the specific circumstances.
[0034] In the embodiments of the present application, unless otherwise clearly specified and limited, the first feature at the "upper end" or "lower end" of the second feature may be in direct contact with the first and second features, or the first and second features may be in indirect contact through an intermediate medium.
[0035] The present application will be further described in detail below with reference to the accompanying drawings and specific embodiments.
[0036] like Figure 1 As shown, the embodiment of the present application discloses an assembly structure with controllable deformation under high temperature and high pressure, including an enclosing portion, a first cavity is provided in the enclosing portion, a heating component is provided in the first cavity, the outer wall of the heating component is in contact with the inner wall of the first cavity, a second cavity is provided in the heating component, a sample placement unit is provided in the second cavity, the outer wall of the sample placement unit is in contact with the inner wall of the second cavity, a third cavity for placing a sample 4 is provided in the sample placement unit, a first voltage control component is provided on the sample placement unit, and a second voltage control component is provided on the heating component. The specific structure is described below.
[0037] In this embodiment, the enclosing portion includes an enclosing block 1 with a square cross-section, a first cylindrical cavity is provided in the center of the enclosing block 1, and pressure blocks 2 are provided at both ends of the first cylindrical cavity. A first cavity is formed between the enclosing block 1 and the two pressure blocks 2. In actual application, the enclosing block 1 with a square cross-section is more evenly stressed in all directions, and can better withstand the high pressure from the six-sided top press, ensuring that the entire assembly structure remains intact under high-pressure conditions, and the pressure blocks 2 at both ends can ensure that pressure is evenly applied from both ends.
[0038] In specific applications, the material selection of the surrounding block 1 and the pressing block 2 is as follows: the material of the surrounding block 1 is pyrophyllite, and the material of the pressing block 2 is tungsten carbide or zirconium dioxide. The surrounding block 1 is made of pyrophyllite, which is resistant to high temperature, has good insulation, low thermal expansion coefficient, and is easy to process; the pressing block 2 is made of tungsten carbide or zirconium dioxide, which has high strength, high hardness, wear resistance and good thermal conductivity, ensuring stability and reliability under high pressure and high temperature environment.
[0039] Furthermore, in this embodiment, the heating assembly includes a heating tube 3 located in the first cavity. The material of the heating tube 3 is graphite. This is mainly because graphite has very high thermal conductivity and can quickly transfer heat to the sample 4. At the same time, it remains stable at high temperatures and will not melt or decompose. Graphite has good conductivity and can be used as a heating element. It quickly heats up through resistance heating to ensure that the sample 4 reaches the required temperature in a short time.
[0040] On this basis, if Figure 1 As shown, a pressure-transmitting protective tube 5 is provided over the heating tube 3. The outer wall of the pressure-transmitting protective tube 5 abuts the inner wall of the first cavity. The pressure-transmitting protective tube 5 ensures uniform external pressure transmission to the heating tube 3 and the sample 4, avoiding local overpressure or underpressure and improving the uniformity of pressure distribution. In specific applications, the material of the pressure-transmitting protective tube 5 can be magnesium oxide or dolomite. Both magnesium oxide and dolomite remain stable at high temperatures and will not melt or decompose, making them suitable for high-temperature and high-pressure environments. Both materials are excellent insulators, effectively preventing current leakage and ensuring the safe operation of the heating component and the voltage control component.
[0041] Furthermore, a second cylindrical cavity is provided through the heating tube 3, and piezoelectric ceramics 9 are provided at both ends of the second cylindrical cavity. The material of the piezoelectric ceramics 9 is PTZ piezoelectric ceramics. A second cavity is formed between the heating tube 3 and the two PTZ piezoelectric ceramics. The sample placement unit is located in the second cavity. The utility model redesigns the assembly structure of controllable deformation under high temperature and high pressure. There are two PZT piezoelectric ceramic blocks inside. Different voltages can be applied to the PZT piezoelectric ceramic blocks through the electric couples on both sides of the PZT piezoelectric ceramic blocks. According to the principle of inverse piezoelectric effect, the controllable deformation of the PZT piezoelectric ceramic blocks is realized, and the sample is subjected to secondary extrusion deformation under high pressure conditions through the controllable deformation of the ceramic blocks, so that the material undergoes plastic deformation under quasi-hydrostatic pressure conditions, solving the problem that the sample cannot be controlled to undergo secondary deformation after pressurization by the six-sided top press. This deformation method can better refine the grain structure inside the material, even to the submicron or nanometer level, thereby significantly improving the mechanical properties and performance of the material, and can meet the synthetic pressure requirements of materials such as micron-level polycrystalline diamond and high-grade superhard composite materials.
[0042] like Figure 1 As shown, the sample placement unit includes an insulating cylindrical tube 7 located in the second cavity, and a third cylindrical cavity with openings at both ends is provided in the insulating cylindrical tube 7. The outer wall of the insulating cylindrical tube 7 abuts against the inner wall of the second cavity. The insulating cylindrical tube 7 isolates the sample 4 from the external environment, reduces the interference of external impurities, and ensures that the sample 4 reacts in a pure environment. The outer wall of the insulating cylindrical tube 7 abuts against the inner wall of the second cavity, ensuring that the pressure is evenly transmitted from the pressure transmission protection tube 5 to the insulating cylindrical tube 7, and then to the sample 4, avoiding local overpressure or underpressure.
[0043] On the other hand, the present application provides insulating protective sheets 6 at the openings, and a third cavity for placing the sample 4 is formed between the insulating cylindrical tube 7 and the two insulating protective sheets 6. The insulating protective sheets 6 also play a supporting role at both ends of the third cylindrical cavity to ensure that the sample 4 is subjected to uniform pressure in all directions.
[0044] Further optionally, considering that boron nitride has a very high melting point (about 3000°C), it can maintain structural stability in extremely high temperature environments without melting or decomposing, and is suitable for high temperature and high pressure experiments. The insulating cylindrical tube 7 and the insulating protective sheet 6 are both made of boron nitride.
[0045] In other embodiments, other high-temperature and high-pressure stable materials may also be selected, which are not given as examples here.
[0046] In this embodiment, the first voltage control component includes a first positive couple 81 and a first negative couple 82, and the first positive couple 81 and the first negative couple 82 pass through the surrounding part and the heating component to be electrically connected to the sample placement unit respectively. The second voltage control component includes a second positive couple 83 and a second negative couple 84, and the second positive couple 83 and the second negative couple 84 pass through the surrounding part to be electrically connected to the heating component respectively. By redesigning the assembly structure of controllable deformation under high temperature and high pressure, and utilizing the inverse piezoelectric effect of PZT piezoelectric ceramics (when an electric field is applied in the polarization direction of the dielectric, these dielectrics will produce mechanical deformation or mechanical pressure in a certain direction, and when the external electric field is removed, these deformations or stresses will also disappear.), the voltage on both sides of the PZT piezoelectric ceramics is changed by using the couples on both sides to achieve controllable deformation of the PZT ceramics. Further, through the controllable deformation of the PZT ceramics and the force between the PZT ceramics and the sample 4, the secondary deformation of the sample 4 under high pressure is achieved, and the controllability and repeatability of the secondary deformation process under high pressure are guaranteed.
[0047] Alternatively, refer to Figure 2 In order to achieve precise electrode positioning, the diameters of the first positive couple 81, the first negative couple 82, the second positive couple 83 and the second negative couple 84 are all 0.2 mm, and the outsides of the first positive couple 81, the first negative couple 82, the second positive couple 83 and the second negative couple 84 are all provided with an insulating protective layer. The inner diameter of the insulating protective layer is 0.2 mm and the outer diameter is 0.4 mm, providing double protection to ensure that the couple will not short-circuit or leak in high-voltage and high-temperature environments.
[0048] More specifically, the first positive couple 81 and the first negative couple 82 are connected to the PTZ piezoelectric ceramics, and the first positive couple 81 and the first negative couple 82 are connected to the external machine through the corresponding holes on the graphite heating tube, the pressure protection tube and the pyrophyllite surrounding block. For details, please refer to Figure 3 and Figure 4 .
[0049] Combined with the structure given in the present invention, it is further explained as follows: by utilizing the inverse piezoelectric effect of the PZT piezoelectric ceramic itself, the voltage at both ends of the PZT piezoelectric ceramic is controlled by the electric couples on both sides, so that the PZT piezoelectric ceramic can achieve controllable deformation, and the force between the PZT piezoelectric ceramic and sample 4 is utilized to achieve secondary deformation of sample 4 under high pressure conditions.
[0050] It is worth mentioning that the utility model can further significantly optimize the material synthesis and modification effects, and improve the preparation efficiency of ultrafine grains and other materials, and is suitable for the synthesis and preparation of various material types, including metals, non-metals, composite materials, etc. The use of a six-sided top press to achieve controllable secondary deformation under high-pressure conditions has lower energy consumption and less waste generation than traditional material preparation methods.
[0051] Further, the application of the present invention is as follows Figure 3 and Figure 4 As shown, place the assembled structure in the hammer of the six-sided top press, connect the thermocouples to the external power supply, and then start working.
[0052] In the description of the embodiments of the present application, it should be noted that in the description of the present application, terms such as "upper" and "lower" indicating directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings. This is only for the convenience of description and does not indicate or imply that the device or component must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it cannot be understood as a limitation on the present application.
[0053] In the description of this application, the description with reference to the terms "this embodiment", "some embodiments", etc. means that the specific features, mechanisms, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, mechanisms, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples, unless they are mutually inconsistent.
[0054] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present application should be included in the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.
Claims
1. An assembly structure capable of controllable deformation under high temperature and high pressure, characterized in that: It includes an enclosing portion, a first cavity is provided in the enclosing portion, a heating component is provided in the first cavity, the outer wall of the heating component is in contact with the inner wall of the first cavity, a second cavity is provided in the heating component, a sample placement unit is provided in the second cavity, the outer wall of the sample placement unit is in contact with the inner wall of the second cavity, a third cavity for placing a sample is provided in the sample placement unit, a first voltage control component is provided on the sample placement unit, and a second voltage control component is provided on the heating component.
2. The assembly structure according to claim 1, wherein: The enclosing portion comprises an enclosing block (1) with a square cross-section, a first cylindrical cavity being provided at the center of the enclosing block (1), pressing blocks (2) being provided at both ends of the first cylindrical cavity, and a first cavity being formed between the enclosing block (1) and the two pressing blocks (2).
3. The assembly structure according to claim 2, wherein: The material of the surrounding block (1) is pyrophyllite, and the material of the pressing block (2) is tungsten carbide or zirconium dioxide.
4. The assembly structure according to claim 1, wherein: The heating assembly comprises a heating tube (3) located in a first cavity, a pressure transmission protection tube (5) is provided on the outer shell of the heating tube (3), the outer wall of the pressure transmission protection tube (5) is in contact with the inner wall of the first cavity, a through second cylindrical cavity is provided in the heating tube (3), piezoelectric ceramics (9) are provided at both ends of the second cylindrical cavity, a second cavity is formed between the heating tube (3) and the two piezoelectric ceramics (9), and the sample placement unit is located in the second cavity.
5. The assembly structure according to claim 4, wherein: The material of the heating tube (3) is graphite, the material of the pressure transmission protection tube (5) is magnesium oxide or dolomite, and the material of the piezoelectric ceramic (9) is PTZ piezoelectric ceramic.
6. The assembly structure according to claim 1, wherein: The sample placement unit comprises an insulating cylindrical tube (7) located in the second cavity, a third cylindrical cavity with openings at both ends is provided in the insulating cylindrical tube (7), the outer wall of the insulating cylindrical tube (7) abuts against the inner wall of the second cavity, insulating protection sheets (6) are respectively provided at the openings, and a third cavity for placing a sample (4) is formed between the insulating cylindrical tube (7) and the two insulating protection sheets (6).
7. The assembly structure according to claim 6, wherein: The insulating cylindrical tube (7) and the insulating protective sheet (6) are both made of boron nitride.
8. The assembly structure according to claim 1, wherein: The first voltage control component includes a first positive couple (81) and a first negative couple (82), and the first positive couple (81) and the first negative couple (82) respectively pass through the surrounding part, the heating component and are electrically connected to the sample placement unit. The second voltage control component includes a second positive couple (83) and a second negative couple (84), and the second positive couple (83) and the second negative couple (84) respectively pass through the surrounding part and are electrically connected to the heating component.
9. The assembly structure according to claim 8, wherein: The diameters of the first positive couple (81), the first negative couple (82), the second positive couple (83) and the second negative couple (84) are all 0.2 mm, and an insulating protective layer is provided on the outer sides of the first positive couple (81), the first negative couple (82), the second positive couple (83) and the second negative couple (84), wherein the inner diameter of the insulating protective layer is 0.2 mm and the outer diameter is 0.4 mm.