Wafer bearing device and plasma enhanced chemical vapor deposition equipment

Abstract

The utility model provides a wafer bearing device and plasma enhanced chemical vapor deposition equipment, the wafer bearing device comprises a base and a bearing ring, the bearing ring is located at the edge position of the base, the upper surface of the bearing ring is provided with a plurality of carrier parts, the upper surface of each carrier part is a spherical surface and is used for being in contact with a wafer to bear the wafer, and the upper surface of each carrier part is a spherical surface. According to the bearing ring, the carrier component is arranged on the wafer, namely the contact surface between the carrier component and the wafer is a spherical surface, so that the contact area between the carrier component and the wafer is increased, the adhesion between the bearing ring and the wafer is enhanced, the stress can be distributed more uniformly, the possibility of stress concentration is reduced, the shear stress borne by the wafer is effectively reduced, and the yield of the wafer is improved. And the phenomenon of film stripping or particle stripping in the contact area of the wafer edge and the bearing ring is reduced or avoided, so that the defect of edge aggregation patterns on the surface of the wafer is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a wafer carrying device and plasma enhanced chemical vapor deposition equipment. Background Art

[0002] The Plasma-Enhanced Chemical Vapor Deposition (PECVD) process is a thin film deposition process that can deposit thin films of various materials on wafers at relatively low temperatures. When the PECVD process is performed on a wafer, the wafer is usually placed in a process chamber of the PECVD equipment. The process chamber is equipped with a wafer carrier. The wafer is supported by a carrier ring in the wafer carrier, and the carrier ring is used to lift and transfer the wafer, thereby transferring the wafer out of the process chamber or changing the position of the wafer placed on the carrier ring. However, after the wafer completes the PECVD process, edge cluster map defects are prone to appear on the wafer surface, that is, dense defects are easily formed in the area where the wafer edge contacts the carrier ring, and the defects are mainly surface particles. Utility Model Content

[0003] The purpose of the utility model is to provide a wafer carrying device and a plasma enhanced chemical vapor deposition device to improve edge aggregation pattern defects on the surface of a wafer.

[0004] To achieve the above-mentioned purpose, the utility model provides a wafer carrying device, including a base and a carrying ring, wherein the carrying ring is located at the edge of the base, and the carrying ring has multiple carrier components, and the upper surface of each carrier component is spherical, which is used to contact the wafer to carry the wafer.

[0005] Optionally, in the wafer carrying device, there is a spacing between the multiple carrier components, and the spacing between adjacent carrier components is equal.

[0006] Optionally, in the wafer carrying device, the lower surface of each carrier component is connected to the upper surface, and the lower surface of each carrier component is flat.

[0007] Optionally, in the wafer carrying device, the carrying ring has a plurality of through holes arranged along the height direction, the plurality of through holes correspond one-to-one to the plurality of carrier components, and each of the through holes is located on the side of the corresponding carrier component away from the wafer.

[0008] Optionally, in the wafer carrying device, all the through holes are evenly distributed on a side of the carrying ring away from the wafer, and the spacing between adjacent through holes is equal.

[0009] Optionally, in the wafer carrying device, the cross-sectional shape of each through hole is circular.

[0010] Optionally, in the wafer carrying device, the upper surface of the carrying ring has a first horizontal step surface and a second horizontal step surface, the second horizontal step surface is lower than the first horizontal step surface, and all the through holes and all the carrier components are located on the second horizontal step surface.

[0011] Optionally, in the wafer carrying device, a protruding structure is provided at a middle position of the base, and the protruding structure is arranged in an area surrounded by an inner ring of the carrying ring.

[0012] Optionally, in the wafer carrying device, the wafer carrying device further includes a lifting component, and the lifting component is located between the protruding structure and the wafer to support the wafer placed on the upper surface of the carrier component.

[0013] Based on the same concept, the present invention also provides a plasma enhanced chemical vapor deposition device, including the wafer carrying device as described above;

[0014] A process chamber, wherein the wafer carrying device is located in the process chamber;

[0015] A spray device is located above the wafer supporting device and is used to provide reaction gas into the process chamber.

[0016] In the wafer supporting device and plasma enhanced chemical vapor deposition equipment provided by the present invention, the wafer supporting device includes a base and a supporting ring. The supporting ring is located at the edge of the base. The upper surface of the supporting ring has multiple carrier components. The upper surface of each carrier component is spherical and is used to contact the wafer to support the wafer, that is, the contact surface between the carrier component and the wafer is spherical. In this way, the contact area between the carrier component and the wafer is increased, thereby enhancing the adhesion between the supporting ring and the wafer, and making the stress more evenly distributed, reducing the possibility of stress concentration, thereby effectively reducing the shear stress borne by the wafer, reducing or avoiding the phenomenon of film peeling or particle peeling in the area where the edge of the wafer contacts the supporting ring, and thus improving the edge aggregation pattern defects on the wafer surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a schematic cross-sectional view of a wafer carrier device according to an embodiment of the present invention;

[0018] Figure 2is a top view of a bearing ring in a wafer bearing device of an embodiment of the present application;

[0019] Figure 3 is Figure 2 is a partial structure schematic view of an A area in the above-mentioned wafer bearing device;

[0020] Figure 4 is a sectional structure schematic view of a plasma enhanced chemical vapor deposition equipment of an embodiment of the present application;

[0021] Figure 5 is a principle schematic view when a plurality of wafer bearing devices are arranged in a process cavity of a plasma enhanced chemical vapor deposition equipment of an embodiment of the present application;

[0022] In which, the following is the mark explanation:

[0023] 100-wafer bearing device;

[0024] 110-substrate; 111-protruding structure;

[0025] 120-bearing ring; 120a-first water flat step surface; 120b-second water flat step surface; 121-through hole;

[0026] 130-carrier component; 130a-upper surface; 130b-lower surface.

[0027] 140-lifting component;

[0028] 200-wafer;

[0029] 300-plasma enhanced chemical vapor deposition equipment; 310-process cavity; 320-spraying device; 330-transport plate. DETAILED DESCRIPTION

[0030] The wafer bearing device and the plasma enhanced chemical vapor deposition equipment of the present application are further described in detail below in combination with the accompanying drawings and specific embodiments. The advantages and features of the present application will be more apparent according to the following description. It should be noted that the drawings are all in a very simplified form and all use non-precise proportions, only to facilitate, clearly assist in the purpose of explaining the embodiments of the present application.

[0031] As used in the present invention, the singular forms "a", "an", and "the" include plural objects, the term "or" is generally used to include the meaning of "and / or", the term "several" is generally used to include the meaning of "at least one", and the term "at least two" is generally used to include the meaning of "two or more". In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly specifying the number of the indicated technical features. Therefore, the features specified as "first", "second", and "third" may explicitly or implicitly include one or at least two of the features.

[0032] As described in the background art, after a wafer undergoes a PECVD process, an edge cluster map defect is likely to appear on the wafer surface. Research has found that during the PECVD process, the back side of the wafer (i.e., the surface close to the carrier ring) has a sharp chamfered area where the carrier ring contacts the wafer. These sharp chamfered areas cause the film in the wafer to be subjected to high shear stress and are prone to film peeling or particle shedding. This creates a particle source or a film peeling source, which, after peeling or falling off, accumulates on the carrier ring, resulting in an edge cluster map defect in the area where the wafer surface contacts the carrier ring.

[0033] In response to the technical problems described above, the present invention provides a wafer carrying device to improve edge-aggregated pattern defects on the wafer surface.

[0034] Figure 1 Schematic diagram of the cross-sectional structure of the wafer carrier device of the present utility model embodiment. Figure 1As shown, the wafer carrying device 100 provided in this embodiment includes a base 110 and a carrier ring 120, wherein the carrier ring 120 is located at the edge of the base 110, and the carrier ring 120 has a plurality of carrier parts 130, and the upper surface 130a of each carrier part 130 is a spherical surface, which is used to contact with the wafer 200 to carry the wafer 200, that is, the contact surface between the carrier part 130 and the wafer 200 is a spherical surface, that is, the support point of the carrier part 130 on the wafer 200 is a round point, thus increasing the contact area between the carrier part 130 and the wafer 200, thereby enhancing the adhesion between the carrier ring 120 and the wafer 200, and making the stress more evenly distributed, reducing the possibility of stress concentration, thereby effectively reducing the shear stress (shear stress) borne by the wafer 200, and reducing or avoiding the film peeling (film peeling) in the area where the edge of the wafer 200 contacts the carrier ring 120. The phenomenon of film peeling or particle peeling is reduced, that is, the particle source or film peeling source on the surface of the carrier ring 120 is reduced, thereby improving the edge aggregation pattern defects on the surface of the wafer 200.

[0035] Figure 2 This is a top view of the carrier ring in the wafer carrier device of the embodiment of the present invention. Figure 2 Combined with Figure 1 As shown, the carrying ring 120 can be a circular ring structure, and the multiple carrier components 130 are evenly distributed on the upper surface of the carrying ring 120. When the wafer 200 is placed on the carrying ring 120, the upper surfaces of the multiple carrier components 130 are in direct contact with the wafer 200 to carry the wafer 200.

[0036] Specifically, there is a spacing between the multiple carrier components 130, and the spacing between adjacent carrier components 130 is equal. In this way, the multiple carrier components 130 can be evenly distributed on the carrying ring 120. When the wafer 200 is placed on the carrying ring 120, the multiple carrier components 130 can provide more uniform support for the wafer 200 and can distribute the stress more evenly on the wafer 200, which is beneficial to reduce the possibility of stress concentration at the edge of the wafer 200.

[0037] Figure 3 yes Figure 2 Schematic diagram of the local structure of area A in Figure 3 Figure 2 is a schematic diagram of the local structure of the load-bearing ring. Figure 3As shown, the lower surface 130b of each carrier component 130 is connected to the upper surface 130a, and the lower surface 130b of each carrier component 130 is flat, that is, the carrier component 130 has a hemispherical structure. The upper surface 130a of the carrier component 130 is the surface that contacts the wafer 200, and the lower surface 130b of the carrier component 130 is the surface that contacts the carrier ring 120.

[0038] In addition, since the upper surface 130a of the carrier component 130 contacts the wafer 200 and is spherical, the stability of the carrier component 130 in supporting the wafer 200 can be increased, making it difficult for the wafer 200 to slip or fall off, thereby reducing the pull-out stress between the wafer 200 and the carrier component 130.

[0039] For example, Figure 2 As shown, the number of the carrier components 130 on the carrier ring 120 may be six, but is not limited thereto. The number of the carrier components 130 on the carrier ring 120 may also be greater than six, such as eight or ten.

[0040] refer to Figure 1 Combined with Figure 2 As shown, the carrier ring 120 has a plurality of through holes 121 extending through the carrier ring 120 in the height direction. The through holes 121 correspond one-to-one to the carrier members 130, and each through hole 121 is located on the side of the corresponding carrier member 130 away from the wafer 200. This increases the downward flow velocity of the airflow at the carrier member 130, reduces the pressure of the circumferential flow, and reduces the generation of particles.

[0041] Specifically, during the lifting process of the wafer 200, the airflow may form a vortex when flowing through the carrier ring 120, resulting in an increase in local pressure and a decrease in the flow rate of the airflow. Therefore, the airflow on the lower surface of the wafer 200 in contact with the carrier component 130 is prone to rapid fluctuations in the vortex, which can easily blow off the particle source and thin film stripping source accumulated on the surface of the carrier ring 120 and gather them at the edge area of ​​the surface of the wafer 200 as the airflow flows. Based on this, in this embodiment, a plurality of through holes 121 are provided in the carrier ring 120, which can change the flow path of the airflow at the carrier component 130, thereby increasing the flow rate of the airflow flowing downward at the carrier component 130 and reducing the pressure of the vortex, thereby helping to reduce the deposition and adhesion of the particle source and thin film stripping source on the carrier component 130, and can reduce the deposition and adhesion of byproducts (by products) generated by the deposition process reaction on the carrier component 130, thereby helping to further improve the edge aggregation pattern defects on the surface of the wafer 200.

[0042] like Figure 2As shown, all the through holes 121 are evenly distributed on the side of the carrier ring 120 away from the wafer 200, and the spacing between adjacent through holes 121 is equal. In this way, the overall airflow distribution of the carrier ring 120 can be optimized, and the airflow can be more evenly distributed in various areas of the carrier ring 120, which is beneficial to reducing the accumulation and aggregation of particle sources and thin film peeling sources in the carrier ring 120.

[0043] like Figure 3 As shown, the upper surface of the carrying ring 120 has two horizontal step surfaces of different heights, that is, the upper surface of the carrying ring 120 is stepped, wherein the two horizontal step surfaces of different heights are specifically a first horizontal step surface 120a and a second horizontal step surface 120b, and the second horizontal step surface 120b is lower than the first horizontal step surface 120a.

[0044] In this embodiment, Figure 3 As shown, all of the through holes 121 and all of the carrier components 130 are located on the second horizontal step surface 120b. In this way, the wafer 200 can be limited by the height difference between the second horizontal step surface 120b and the first horizontal step surface 120a, thereby preventing the wafer 200 from shifting in the horizontal direction and ensuring the stability of the wafer 200 during the deposition process.

[0045] like Figure 1 As shown, the base 110 has a raised structure 111 in the middle, which is disposed within the area enclosed by the inner ring of the carrier ring 120. The middle of the base 110 is higher than the edge of the base 110. This means that the base 110 is composed of two cylinders, one of which is located above the other, and the diameter of the upper cylinder is smaller.

[0046] like Figure 1 As shown, the wafer carrier 100 further includes a lifting member 140, which is located between the protruding structure 111 and the wafer 200 to lift the wafer 200 placed on the upper surface 130a of the carrier member 130. Specifically, when the wafer 200 is placed on the carrier member 130, the lifting member 140 can rise to contact and support the wafer 200. When the wafer 200 is moved or transferred, the lifting member 140 can correspondingly descend to facilitate the transfer of the wafer 200 on the carrier member 130.

[0047] Figure 4 FIG is a schematic cross-sectional view of a plasma enhanced chemical vapor deposition device according to an embodiment of the present invention. Figure 4As shown, this embodiment also provides a plasma-enhanced chemical vapor deposition (PECVD) device 300, including a wafer carrier 100, a process chamber 310 and a spray device 320, wherein the wafer carrier 100 is located in the process chamber 310, and the spray device 320 is located above the wafer carrier 100, and is used to provide reaction gas into the process chamber 310 to deposit a film layer on the surface of the wafer 200.

[0048] When the plasma enhanced chemical vapor deposition equipment 300 provided in this embodiment is used to perform a plasma enhanced chemical vapor deposition process on the wafer 200, since the upper surface of the carrier ring 120 in the wafer carrier 100 has multiple carrier components 130, and the upper surface of each carrier component 130 is spherical, the contact area between the carrier component 130 and the wafer 200 is increased, thereby enhancing the adhesion between the carrier ring 120 and the wafer 200, and making the stress more evenly distributed, reducing the possibility of stress concentration, thereby effectively reducing the shear stress borne by the wafer 200, reducing or avoiding the phenomenon of film peeling or particle peeling in the area where the edge of the wafer 200 contacts the carrier ring 120, and thereby improving the edge aggregation pattern defects on the surface of the wafer 200.

[0049] Figure 5 This is a schematic diagram of the principle of arranging multiple wafer carriers in the process chamber of the plasma enhanced chemical vapor deposition equipment of the present utility model embodiment. Figure 5 As shown, a plurality of wafer carriers 100 may be placed in the process chamber 310 , and a wafer 200 may be moved from one pedestal 110 to another pedestal 110 via a carrier ring 120 .

[0050] For example, the number of wafer carriers 100 in the process chamber 310 may be four, so that thin film deposition can be performed on multiple wafers 200 simultaneously, wherein the multiple wafer carriers 100 are all disposed on the transfer plate 330 .

[0051] In summary, it can be seen that in the wafer carrying device and plasma enhanced chemical vapor deposition equipment provided in the embodiments of the present invention, the wafer carrying device includes a base and a carrying ring, the carrying ring is located at the edge of the base, and the upper surface of the carrying ring has multiple carrier parts, and the upper surface of each carrier part is spherical, which is used to contact the wafer to carry the wafer, that is, the contact surface between the carrier part and the wafer is spherical. In this way, the contact area between the carrier part and the wafer is increased, thereby enhancing the adhesion between the carrying ring and the wafer, and making the stress more evenly distributed, reducing the possibility of stress concentration, thereby effectively reducing the shear stress borne by the wafer, reducing or avoiding the phenomenon of film peeling or particle peeling in the area where the edge of the wafer contacts the carrying ring, and thereby improving the edge aggregation pattern defects on the wafer surface.

[0052] The above description is only a description of the preferred embodiment of the present invention and does not limit the scope of the present invention. Any changes and modifications made by ordinary technicians in the field of the present invention based on the above disclosure shall fall within the scope of protection of the claims.

[0053] Furthermore, it should be recognized that although the present invention has been disclosed above with reference to preferred embodiments, the above embodiments are not intended to limit the present invention. Any person skilled in the art will be able to utilize the above-disclosed technical content to make numerous possible variations and modifications to the present invention, or to modify the present invention into equivalent embodiments with equivalent variations, without departing from the scope of the present invention. Therefore, any simple modifications, equivalent variations, and modifications to the above embodiments that do not depart from the present invention and are based on the technical essence of the present invention remain within the scope of protection of the present invention.

Claims

1. A wafer carrying device, characterized in that: It includes a base and a carrying ring, wherein the carrying ring is located at the edge of the base and has multiple carrier parts. The upper surface of each carrier part is spherical and is used to contact the wafer to carry the wafer.

2. The wafer carrier device according to claim 1, wherein: There are intervals between the plurality of carrier components, and the intervals between adjacent carrier components are equal.

3. The wafer carrier device according to claim 2, wherein: The lower surface of each carrier component is connected to the upper surface, and the lower surface of each carrier component is a plane.

4. The wafer carrier device according to claim 1, wherein: The carrying ring has a plurality of through holes arranged along the height direction, the plurality of through holes correspond one-to-one to the plurality of carrier components, and each of the through holes is located on a side of the corresponding carrier component away from the wafer.

5. The wafer carrier device according to claim 4, wherein: All the through holes are evenly distributed on a side of the carrying ring away from the wafer, and the intervals between adjacent through holes are equal.

6. The wafer carrier device according to claim 4 or 5, characterized in that: The cross-sectional shape of each through hole is circular.

7. The wafer carrier device according to claim 4, wherein: The upper surface of the carrying ring has a first horizontal step surface and a second horizontal step surface, the second horizontal step surface is lower than the first horizontal step surface, and all the through holes and all the carrier components are located on the second horizontal step surface.

8. The wafer carrier device according to claim 1, wherein: A protruding structure is provided at the middle position of the base, and the protruding structure is arranged in the area surrounded by the inner circle of the carrying ring.

9. The wafer carrying device according to claim 8, wherein: The wafer carrying device further includes a lifting component, which is located between the protruding structure and the wafer to lift the wafer placed on the upper surface of the carrier component.

10. A plasma enhanced chemical vapor deposition device, characterized in that: comprising a wafer carrying device according to any one of claims 1 to 9; A process chamber, wherein the wafer carrying device is located in the process chamber; A spray device is located above the wafer supporting device and is used to provide reaction gas into the process chamber.

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