Silicon powder upgrading equipment

Abstract

The embodiment of the utility model provides silicon powder upgrading equipment which is characterized in that the silicon powder upgrading equipment comprises a tank body, a gas sensor, a cooling device, a controller, a connecting part and a heating device, a first gas inlet is formed in the bottom of the tank body, and a first gas outlet is formed in the top of the tank body; the gas sensor is arranged at the first gas outlet, the cooling device is arranged on the side wall of the tank body, and the gas sensor is used for collecting the gas concentration at the first gas outlet; a second gas inlet is formed in the bottom of the heating device, a second gas outlet is formed in the top of the heating device, the second gas outlet is connected with the first gas inlet through a connecting part, the second gas inlet is used for inputting nitrogen into the heating device, and the second gas outlet is used for outputting heated nitrogen to the tank body; the controller is respectively connected with the gas sensor, the connecting part, the cooling device and the heating device, and the controller is used for controlling the cooling device, the cooling device and the heating device according to the gas concentration collected by the gas sensor. And the quality of the silicon powder is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the mechanical field, and in particular to a silicon powder upgrading equipment. BACKGROUND

[0002] When a factory is carrying out production activities, the silicon powder overflowing in the reaction device can be collected, and after upgrading treatment, it can be used for secondary sales or recycling.

[0003] In the related art, since nitrogen is not easy to react with silicon powder, after the staff collects the overflowing silicon powder into the container, the normal temperature nitrogen flow can be introduced into the container, and the impurities and volatile components in the silicon powder can be removed through the nitrogen flow purging mode, so as to improve the quality of the silicon powder.

[0004] However, since the silicon powder is usually accompanied by chlorosilane and other impurities, the introduction of the normal temperature nitrogen flow will reduce the temperature in the container, thereby producing chlorosilane condensate, resulting in low quality of the silicon powder. CONTENT OF THE INVENTION

[0005] The embodiment of the present application provides a silicon powder upgrading equipment to solve the problem of low quality of the silicon powder.

[0006] In a first aspect, the embodiment of the present application provides a silicon powder upgrading equipment, comprising: a tank body, a gas sensor, a cooling device, a controller, a connecting component and a heating device, wherein,

[0007] The bottom of the tank body is provided with a first gas inlet, the top of the tank body is provided with a first gas outlet, and the tank body is used for containing silicon powder;

[0008] The gas sensor is arranged at the first gas outlet, and the cooling device is arranged on the side wall of the tank body. The gas sensor is used for collecting the gas concentration at the first gas outlet;

[0009] The bottom of the heating device is provided with a second gas inlet, and the top of the heating device is provided with a second gas outlet. The second gas outlet is connected with the first gas inlet through the connecting component. The second gas inlet is used for inputting nitrogen into the heating device, and the second gas outlet is used for outputting heated nitrogen into the tank body;

[0010] The controller is connected with the gas sensor, the connecting component, the cooling device and the heating device, respectively. The controller is used for controlling the cooling device, the cooling device and the heating device according to the gas concentration collected by the gas sensor.

[0011] In a possible implementation, the second gas inlet is arranged on the first side of the bottom of the heating device;

[0012] The second gas outlet is arranged on the second side of the top of the heating device.

[0013] In a possible implementation, the heating device is provided with a gas transmission pipeline, a first inlet and a first outlet, wherein,

[0014] One end of the gas transmission pipeline is connected with the second gas inlet, and the other end of the gas transmission pipeline is connected with the second gas outlet.

[0015] The first inlet is arranged on the top of the heating device, and the first outlet is arranged on the bottom of the heating device, the first inlet is used for inputting the heating medium into the cavity of the heating device, and the first outlet is used for discharging the cooled heating medium.

[0016] In a possible implementation, a first electromagnetic valve is arranged at the first inlet, wherein,

[0017] The first electromagnetic valve is connected with the controller.

[0018] The controller is configured to send a first instruction to the first electromagnetic valve when the gas concentration is less than or equal to a preset threshold, and the first instruction is used for controlling the electromagnetic valve to be closed to stop inputting the heating medium into the cavity of the heating device through the first inlet.

[0019] The controller is further configured to send a second instruction to the first electromagnetic valve after receiving a start working instruction, and the second instruction is used for controlling the electromagnetic valve to be opened to input the heating medium into the cavity of the heating device through the first inlet.

[0020] In a possible implementation, the first inlet is provided with a first temperature sensor and a first flow regulating valve.

[0021] The first outlet is provided with a second temperature sensor.

[0022] The controller is connected with the first temperature sensor, the second temperature sensor and the first flow regulating valve respectively.

[0023] The controller is configured to adjust the first flow regulating valve according to the temperature collected by the first temperature sensor and the temperature collected by the second temperature sensor.

[0024] In a possible implementation, the number of the gas transmission pipelines is plural, wherein,

[0025] One end of each gas transmission pipeline is connected with the second gas inlet respectively.

[0026] Another end of each gas transmission pipe is connected with the second gas outlet respectively.

[0027] In a possible implementation, the tank body comprises a first tank body part and a second tank body part, the first tank body part and the second tank body part are in communication, wherein,

[0028] The first tank body part is located below the second tank body part.

[0029] The first tank body part is in the shape of an hourglass, and the second tank body part is in the shape of a cylinder.

[0030] In a possible implementation, the cooling device comprises a cooling pipe, the cooling pipe is spirally arranged on a side wall of the tank body, wherein,

[0031] The cooling pipe comprises a second inlet and a second outlet, the second inlet is arranged above the cooling pipe, and the second outlet is arranged below the cooling pipe.

[0032] The second inlet is configured to input refrigerant into the cooling pipe, and the second outlet is configured to discharge the refrigerant in the cooling pipe.

[0033] In a possible implementation, a third temperature sensor and a second flow regulating valve are arranged at the second inlet.

[0034] A fourth temperature sensor is arranged at the second outlet.

[0035] The controller is connected with the third temperature sensor, the fourth temperature sensor and the second flow regulating valve respectively.

[0036] The controller is configured to adjust the second flow regulating valve according to the temperature collected by the third temperature sensor and the temperature collected by the fourth temperature sensor.

[0037] In a possible implementation, the controller is specifically configured to:

[0038] After receiving a starting work instruction, the heating device is controlled to start working, and the gas concentration collected by the gas sensor is acquired.

[0039] When it is detected that the gas concentration is less than or equal to a preset threshold, the heating device is controlled to stop working, and the cooling device is controlled to start working.

[0040] The embodiment of the present application provides a silicon powder upgrading equipment, when the quality of the silicon powder needs to be improved, the silicon powder can be placed in a tank body of the silicon powder upgrading equipment, a heating device of the silicon powder upgrading equipment can heat normal-temperature nitrogen gas to obtain heated nitrogen gas, and then the heated nitrogen gas is input into the tank body, so that the impurities in the silicon powder can be removed, and chlorosilane condensate cannot be generated, and the quality of the silicon powder can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0041] The drawings incorporated in the specification and constituting a part thereof illustrate embodiments consistent with the present application and together with the specification are used to explain the principles of the present application.

[0042] Figure 1 A silicon powder collecting device provided by the embodiment of the present application is shown in a schematic diagram.

[0043] Figure 2 A structure schematic diagram of a silicon powder upgrading equipment provided by the embodiment of the present application is shown.

[0044] Figure 3 A structure schematic diagram of another silicon powder upgrading equipment provided by the embodiment of the present application is shown.

[0045] Figure 4 A structure schematic diagram of a heating device and a control device provided by the embodiment of the present application is shown.

[0046] Figure 5 A structure schematic diagram of another silicon powder upgrading equipment provided by the embodiment of the present application is shown.

[0047] Explanation of reference signs:

[0048] 10 - collecting container

[0049] 20 - silicon powder upgrading equipment

[0050] 11 - tank body

[0051] 12 - first communication port

[0052] 13 - second communication port

[0053] 21 - tank body

[0054] 22 - gas sensor

[0055] 23 - cooling device

[0056] 24 - controller

[0057] 25 - connecting component

[0058] 26 - heating device

[0059] 211 - first gas inlet

[0060] 212 - first gas outlet;

[0061] 213 - first tank body portion;

[0062] 214 - second tank body portion;

[0063] 231 - cooling pipe;

[0064] 232 - second inlet;

[0065] 233 - second outlet;

[0066] 234 - third temperature sensor;

[0067] 235 - second flow regulating valve;

[0068] 236 - fourth temperature sensor;

[0069] 261 - second gas inlet;

[0070] 262 - second gas outlet;

[0071] 263 - gas transfer pipe;

[0072] 264 - first inlet;

[0073] 265 - first outlet;

[0074] 266 - first solenoid valve;

[0075] 267 - first temperature sensor;

[0076] 268 - first flow regulating valve;

[0077] 269 - second temperature sensor.

[0078] The above-described drawings show certain embodiments of the application. There are many alterations that can be made without departing from the spirit and scope of the application. It will be appreciated that those alterations are intended to fall within the scope of the application. These drawings and the associated description are not intended to restrict the concept of the application in any manner. DETAILED DESCRIPTION

[0079] The exemplary embodiments will be described in detail herein with reference to the attached drawings. The description herein is intended for illustrating the conceptual aspects of the application and is not intended to represent the only embodiments in which the concept of the application can be practiced. Rather, the description herein is intended to illustrate the apparatus and methods in accordance with some aspects of the application, as detailed in the appended claims.

[0080] It should be noted that in the embodiments of the present application, some software, components, models and other prior art solutions may be mentioned, which should be considered as exemplary, and the purpose is only to illustrate the feasibility of the implementation of the technical solutions of the present application, but it does not mean that the applicant has or will necessarily use the solution.

[0081] For ease of understanding, the following will be combined with Figure 1 The scene to which the embodiments of the present application are applied is described.

[0082] Figure 1 A schematic diagram of a silicon powder collecting device provided by the embodiments of the present application is shown. Please refer to Figure 1 The collecting device 10 includes a tank body 11, a first communication port 12 and a second communication port 13. The tank body 11 is a container with a cavity inside, and the cavity of the tank body 11 can be used to collect and store silicon powder. The tank body 11 is in communication with the outside through the first communication port 12 and the second communication port 13. The first communication port 12 is located at the top of the tank body 11, and silicon powder can enter the tank body 11 through the first communication port 12. The second communication port 13 is located at the bottom of the tank body 11, and silicon powder can be taken out from the second communication port 13.

[0083] In the related art, since nitrogen is not easy to react with silicon powder, after the staff collects the silicon powder into the container, nitrogen gas flow at room temperature can be introduced into the container, and the impurities and volatile components in the silicon powder can be removed by purging with the nitrogen gas flow, thereby improving the quality of the silicon powder. However, since the silicon powder usually also contains chlorosilane impurities, the input of the nitrogen gas flow at room temperature will lower the temperature in the container, thereby producing chlorosilane condensate, resulting in low quality of the silicon powder.

[0084] The embodiments of the present application provide a silicon powder upgrading equipment. When it is necessary to improve the quality of the silicon powder, the silicon powder can be placed in the tank body of the silicon powder upgrading equipment, and the heating device of the silicon powder upgrading equipment can heat the nitrogen gas at room temperature to obtain heated nitrogen gas, which is then input into the tank body, so as to remove the impurities in the silicon powder without generating chlorosilane condensate, thereby improving the quality of the silicon powder.

[0085] In the following, the test equipment shown in the present application will be described in detail through specific embodiments. It should be noted that the following embodiments can exist independently, or can be combined with each other, and for the same or similar content, the description will not be repeated in different embodiments.

[0086] Figure 2 A structural schematic diagram of a silicon powder upgrading equipment provided by the embodiments of the present application is shown. Please refer to Figure 2The silicon powder upgrading device 20 comprises a tank body 21, a gas sensor 22, a cooling device 23, a controller 24, a connecting component 25 and a heating device 26. The tank body 21 is provided with a first gas inlet at the bottom and a first gas outlet at the top, and is used for containing silicon powder. The gas sensor 22 is arranged at the first gas outlet. The cooling device 23 is arranged on the side wall of the tank body 21. The gas sensor 22 is used for collecting the gas concentration at the first gas outlet. The heating device 26 is provided with a second gas inlet at the bottom and a second gas outlet at the top. The second gas outlet is connected to the first gas inlet through the connecting component 25. The second gas inlet is used for inputting nitrogen into the heating device 26. The second gas outlet is used for outputting heated nitrogen into the tank body 21. The controller 24 is connected to the gas sensor 22, the connecting component 25, the cooling device 23 and the heating device 26. The controller 24 is used for controlling the connecting component 25, the cooling device 23 and the heating device 26 according to the gas concentration collected by the gas sensor 22.

[0087] The tank body 21 has the functions of collecting and containing, and can be used as a container to contain gas, liquid or solid substances. The tank body 21 can be used to contain the silicon powder collected by the factory. Optionally, the material of the tank body 21 can be corrosion-resistant and chemical-resistant material, such as stainless steel, plastic, etc., which can ensure that the tank body 21 is not corroded or damaged during the process of containing substances.

[0088] The tank body 21 comprises a first gas inlet, which is located at the bottom of the tank body 21. That is, the gas can enter the inside of the tank body 21 through the first gas inlet and contact the silicon powder inside the tank body 21.

[0089] The tank body 21 comprises a first gas outlet, which is located at the top of the tank body 21. That is, the gas inside the tank body 21 can be output through the first gas outlet.

[0090] The gas sensor 22 has the function of collecting the concentration of the gas, which can be used to collect the gas and detect the concentration of the gas. The gas concentration collected by the gas sensor 22 can be displayed on the display screen of the gas sensor 22 or sent to the display device of the controller 24 for display.

[0091] The gas sensor 22 is located at the first gas outlet at the top of the tank body 21, and can collect the concentration of the gas output from the tank body 21. For example, assuming that there are hydrogen and chlorosilane gas in the tank body 21, the tank body 21 can output the hydrogen and chlorosilane gas through the first gas outlet, and the gas sensor 22 located at the first gas outlet can collect the concentration of the hydrogen and chlorosilane gas. Optionally, the gas sensor 22 can set a concentration threshold of the gas. When the gas sensor 22 detects that the concentration of the gas exceeds the concentration threshold, an alarm can be triggered.

[0092] The cooling device 23 has the function of cooling and can be used to cool the tank 21. The cooling device 23 can be cooled by air flow or by liquid.

[0093] The cooling device 23 is located on the side wall of the tank 21, and the cooling device 23 can be arranged on the side wall of the tank 21 in a spiral manner, wherein the side wall of the tank 21 refers to the outer side wall of the tank 21.

[0094] The controller 24 has the function of controlling and can be used to control the components, devices and systems connected to the controller 24. The controller 24 can be located in the central control room of the factory, or on the side wall of the tank 21. The worker can operate the controller 24 to control the components connected to the controller 24.

[0095] The controller 24 is connected to the gas sensor 22, the connecting component 25, the cooling device 23 and the heating device 26 respectively. After the gas sensor 22 collects the gas concentration output from the tank 21, it can send the concentration result to the controller 24. The controller 24 can control the connecting component 25, the cooling device 23 and the heating device 26 according to the obtained gas concentration. For example, the controller 24 can control the opening or closing of the connecting component 25, and can also control the starting or stopping of the cooling device 23 and the heating device 26.

[0096] The connecting component 25 has the function of connecting and can be used to connect different components or systems. The connecting component 25 can connect the second gas outlet of the heating device 26 with the first gas inlet of the tank 21, that is, the gas in the heating device 26 can enter the inside of the tank 21 through the connecting component 25. The connecting component 25 can connect different components by pipeline connection. Optionally, the pipeline connection can connect liquid and gas pipelines through pipe joints, valves and flanges to ensure the safe transmission of fluids.

[0097] The heating device 26 has the function of heating and can be used to heat the nitrogen entering the heating device 26. The heating device 26 can heat the gas entering the heating device 26 by inputting heating medium into the inside and exchanging heat between the heating medium and the gas.

[0098] The heating device 26 includes a second gas inlet, which is located at the bottom of the heating device 26. Nitrogen can enter the inside of the heating device 26 through the second gas inlet, and the heating device 26 can heat the nitrogen entering the inside.

[0099] The heating device 26 includes a second gas outlet, which is located at the top of the heating device 26. The heating device 26 can output the heated nitrogen through the second gas outlet.

[0100] The structure of the silicon powder upgrading equipment will be described below in combination with specific examples. Figure 3

[0101] Figure 3 Another structure of the silicon powder upgrading equipment is provided in the embodiment of the present application, and the structure is shown in Figure 2 The structure of the silicon powder upgrading equipment 20 is shown in Figure 3 The silicon powder upgrading equipment 20 further comprises a first gas inlet 211, a first gas outlet 212, a second gas inlet 261 and a second gas outlet 262. The first gas inlet 211 is located at the bottom of the tank body 21, and gas can be input into the tank body 21 through the first gas inlet 211. The first gas outlet 212 is located at the top of the tank body 21, and gas can be output from the tank body 21 through the first gas outlet 212. The second gas inlet 261 is located at the bottom of the heating device 26, and gas can be input into the heating device 26 through the second gas inlet 261. The second gas outlet 262 is located at the top of the heating device 26, and heated gas can be output from the heating device 26 through the second gas outlet 262. The second gas outlet 262 and the first gas inlet 211 are connected through the connecting component 25.

[0102] The working process of the silicon powder upgrading equipment will be described below in combination with the silicon powder upgrading equipment 20.

[0103] When it is necessary to improve the quality of the silicon powder, the silicon powder to be improved in quality can be placed in the tank body 21. After the silicon powder is placed, the worker can click the start button on the display panel of the controller 24 to send a start working instruction to the controller 24. After the controller 24 receives the start working instruction, the controller 24 controls the heating device 26 to start working, so that the normal-temperature nitrogen gas enters the heating device 26 from the second gas inlet 261 of the heating device 26. The heating device 26 has a heating medium, and the heating medium can heat the nitrogen gas entering the heating device 26 through heat exchange.

[0104] After the nitrogen gas is heated in the heating device 26, the heated nitrogen gas can be output from the second gas outlet 262 of the heating device 26. The second gas outlet 262 of the heating device 26 and the first gas inlet 211 of the tank body 21 are connected through the connecting component 25, that is, after the heated nitrogen gas is output from the second gas outlet 262, the heated nitrogen gas is first input into the first gas inlet 211 of the tank body 21 through the connecting component 25, and then enters the inside of the tank body 21 through the first gas inlet 211 of the tank body 21.

[0105] ​The heated nitrogen enters the inside of the tank body 21 and can contact the silicon powder contained in the tank body 21. As the heating device 26 continuously inputs the heated nitrogen into the tank body 21, the heated nitrogen can carry the impurity gas in the silicon powder and output from the first gas outlet 212 of the tank body 21, wherein the impurity gas can include chlorosilane gas, hydrogen, etc., that is, the gas output from the first gas outlet 212 can include nitrogen and impurity gas.

[0106] After the nitrogen and the impurity gas are output from the first gas outlet 212 of the tank body 21, the gas sensor 22 arranged at the first gas outlet 212 can collect the gas. After the gas sensor 22 collects the concentration of the impurity gas, the gas sensor 22 can transmit the gas concentration of the impurity gas to the controller 24.

[0107] After the controller 24 receives the gas concentration collected by the gas sensor 22, the controller 24 can control the connecting component 25, the cooling device 23 and the heating device 26 according to the gas concentration collected by the gas sensor 22. That is, when the controller 24 detects that the gas concentration collected by the gas sensor 22 is less than or equal to a preset threshold value, the controller 24 can control the heating device 26 to stop working and control the cooling device 23 to start working, wherein the preset threshold value can be a value set in the controller 24 by the worker in advance. For example, the preset threshold value can be 0.01.

[0108] The silicon powder upgrading equipment 20 shown in the embodiments of the present application includes a tank body 21, a gas sensor 22, a cooling device 23, a controller 24, a connecting component 25 and a heating device 26. The tank body 21 has the functions of collecting and containing and can be used to contain silicon powder. The bottom of the tank body 21 is provided with a first gas inlet 211 and the top of the tank body 21 is provided with a first gas outlet 212. The gas sensor 22 has the function of collecting the concentration of gas and can collect the concentration of gas output from the tank body 21 to improve the accuracy of impurity gas measurement. The cooling device 23 has the function of cooling and cooling. The controller 24 has the function of control. The connecting component 25 has the function of connection. The heating device 26 has the function of heating. The bottom of the heating device 26 is provided with a second gas inlet 261 and the top of the heating device 26 is provided with a second gas outlet 262. By inputting the heated nitrogen into the tank body 21, the generation of chlorosilane condensate due to the temperature drop of the tank body 21 is prevented, and the quality of the silicon powder is improved. The controller 24 is used to control the cooling device 23, the connecting component 25 and the heating device 26, and the stability of the silicon powder upgrading equipment 20 is improved.

[0109] On the basis of any one of the above embodiments, the following will be described in combination with Figure 4 The test equipment is further described.

[0110] Figure 4 The structure schematic diagram of the heating device and the control equipment provided in the embodiments of the present application. Please refer toFigure 4 The heating device 26 comprises a gas transmission pipeline 263, a first inlet 264, a first outlet 265, a first electromagnetic valve 266, a first temperature sensor 267, a first flow regulating valve 268 and a second temperature sensor 269.

[0111] The heating device 26 comprises a first side and a second side. For example, when the first side is the left side of the heating device 26, the second side is the right side of the heating device 26; when the first side is the right side of the heating device 26, the second side is the left side of the heating device 26. The second gas inlet 261 is arranged at the first side of the bottom of the heating device 26, and the second gas outlet 262 is arranged at the second side of the top of the heating device 26. The second gas inlet 261 and the second gas outlet 262 are arranged on the two sides of the heating device 26, so that the nitrogen gas can be fully heated in the heating device 26.

[0112] The gas transmission pipeline 263 has the function of transmitting gas. One end of the gas transmission pipeline 263 is connected with the second gas inlet 261, and the other end of the gas transmission pipeline is connected with the second gas outlet 262, that is, the nitrogen gas can enter the heating device 26 through the second gas inlet 261, and then be transmitted to the second gas outlet 262 through the gas transmission pipeline 263.

[0113] The number of gas transmission pipelines 263 can be multiple, that is, one end of each gas transmission pipeline 263 is connected with the second gas inlet respectively, and the other end of each gas transmission pipeline 263 is connected with the second gas outlet respectively. By arranging multiple gas transmission pipelines 263, the amount of nitrogen gas input into the heating device 26 can be larger, and the efficiency can be improved.

[0114] The first inlet 264 has the function of communication. The first inlet 264 is arranged at the top of the heating device 26, and the heating medium can be input into the cavity of the heating device 26 through the first inlet 264. The heating medium refers to a substance or material that can transfer heat, for example, the heating medium can refer to water vapor.

[0115] The first outlet 265 has the function of communication. The first outlet 265 is arranged at the bottom of the heating device 26. Since the heating medium will gradually cool down after heat exchange, the cooling heating medium can be discharged from the heating device 26 through the first outlet 265. For example, when the heating medium is water vapor, the cooling heating medium can be water generated by the liquefaction of water vapor.

[0116] The first electromagnetic valve 266 has the function of controlling the flow of the heating medium, that is, after the first electromagnetic valve 266 is opened, the heating medium can enter the cavity of the heating device 26 through the first inlet 264; after the first electromagnetic valve 266 is closed, the input of the heating medium into the heating device 26 can be stopped.

[0117] The first electromagnetic valve 266 is arranged at the first inlet 264 of the heating device 26, and the first electromagnetic valve 266 is connected with the controller 24. When the controller 24 detects that the gas concentration is less than or equal to a preset threshold value, a first instruction for closing the first electromagnetic valve 266 can be sent to the first electromagnetic valve 266, so as to stop inputting the heating medium into the cavity of the heating device 26 through the first inlet 264; when the controller 24 receives a start working instruction, a second instruction for opening the first electromagnetic valve 266 can be sent to the first electromagnetic valve 266, so as to input the heating medium into the cavity of the heating device 26 through the first inlet 264.

[0118] The first temperature sensor 267 has a function of detecting temperature, and the first temperature sensor 267 is arranged at the first inlet 264 of the heating device 26, that is, the first temperature sensor 267 can detect the temperature at the first inlet 264, and the temperature at the first inlet 264 can indicate the initial temperature of the heating medium.

[0119] The first flow regulating valve 268 has a function of regulating flow, and the first flow regulating valve 268 is arranged at the first inlet 264 of the heating device 26. By adjusting the first flow regulating valve 268, the flow of the heating medium into the heating device 26 can be controlled, that is, the temperature in the heating device 26 can be controlled by controlling the flow.

[0120] The second temperature sensor 269 has a function of detecting temperature, and the second temperature sensor 269 is arranged at the first outlet 265 of the heating device 26, that is, the second temperature sensor 269 can detect the temperature at the first outlet 265, and the temperature at the first outlet 265 can indicate the temperature of the heating medium after cooling.

[0121] The controller 24 can be connected with the first temperature sensor 267, the first flow regulating valve 268 and the second temperature sensor 269 respectively. The controller 24 can receive the temperatures collected by the first temperature sensor 267 and the second temperature sensor 269, and the controller 24 can adjust the first flow regulating valve 268 according to the temperature collected by the first temperature sensor 267 and the temperature collected by the second temperature sensor 269. The difference between the temperature collected by the second temperature sensor 269 and the temperature collected by the first temperature sensor 267 can be used to determine the temperature increment of the gas, that is, by adjusting the first flow regulating valve 268, the temperature of the nitrogen in the heating device 26 can be controlled.

[0122] In Figure 4In the embodiment shown, by providing a plurality of gas transmission pipelines 263 on the heating device 26, the amount of nitrogen gas introduced into the heating device 26 can be increased, thereby increasing the efficiency of silicon powder upgrading; by controlling the first electromagnetic valve 266 provided at the first inlet 264, the input and stop of the heating medium can be conveniently controlled; by controlling the first temperature sensor 267 provided at the first inlet 264 and the second temperature sensor 269 provided at the first outlet 265, the first flow regulating valve 268 provided at the first inlet 264 can be controlled, and the temperature of the nitrogen gas in the heating device 26 can be conveniently controlled.

[0123] On the basis of any one of the above embodiments, below, combined with Figure 5 The test equipment is further described.

[0124] Figure 5 Another structure diagram of a silicon powder upgrading equipment provided by the embodiment of the present application is shown, in Figure 2 On the basis of the embodiment shown, please refer to Figure 5 The silicon powder upgrading equipment 20 further includes a first tank body part 213, a second tank body part 214, a cooling pipeline 231, a second inlet 232, a second outlet 233, a third temperature sensor 234, a second flow regulating valve 235, and a fourth temperature sensor 236. The tank body 21 includes the first tank body part 213 and the second tank body part 214. The cooling device 23 includes the cooling pipeline 231, the cooling pipeline 231 includes the second inlet 232 and the second outlet 233, the third temperature sensor 234 and the second flow regulating valve 235 are located at the second inlet 232, and the fourth temperature sensor 236 is located at the second outlet 233.

[0125] The tank body 21 includes the first tank body part 213 and the second tank body part 214, the first tank body part 213 and the second tank body part 214 are in communication, the first tank body part 213 is in the shape of a sandglass, the second tank body part 214 is in the shape of a cylinder, and the first tank body part 213 is located below the second tank body part 214, so that the silicon powder can flow smoothly from the second tank body part 214 into the first tank body part 213.

[0126] The cooling device 23 includes the cooling pipeline 231, the cooling pipeline 231 has the function of cooling, and the cooling pipeline 231 is provided in a spiral manner on the side wall of the tank body 21, so that the tank body 21 can be more fully contacted to improve the efficiency of cooling. The cooling pipeline 231 can sufficiently cool the silicon powder contained in the tank body 21.

[0127] The cooling pipeline 231 comprises a second inlet 232 and a second outlet 233, the second inlet 232 and the second outlet 233 have a communication function, the second inlet 232 is arranged above the cooling pipeline 231, and the second outlet 233 is arranged below the cooling pipeline 231. The refrigerant can be introduced into the cooling pipeline 231 through the second inlet 232, so as to achieve the effect of cooling. The refrigerant in the cooling pipeline 231 can be discharged through the second outlet 233. The refrigerant can be used to absorb external heat, for example, the refrigerant can be circulating water, hydrofluorocarbon, carbon dioxide and the like.

[0128] The third temperature sensor 234 has a temperature measurement function, and the third temperature sensor 234 is arranged at the second inlet 232 and can be used to collect the temperature at the second inlet 232. The collected temperature at the second inlet 232 can also refer to the initial temperature of the refrigerant at the second inlet 232.

[0129] The second flow regulating valve 235 has a flow regulating function, and the second flow regulating valve 235 is arranged at the second inlet 232. By adjusting the second flow regulating valve 235, the flow of the refrigerant introduced into the cooling pipeline 231 can be controlled, that is, the temperature in the cooling device 23 can be controlled by controlling the flow.

[0130] The fourth temperature sensor 236 has a temperature measurement function, and the fourth temperature sensor 236 is arranged at the second outlet 233 and can be used to collect the temperature at the second outlet 233. The collected temperature at the second outlet 233 can also refer to the temperature collected at the second outlet 233.

[0131] The controller 24 can be connected with the third temperature sensor 234, the second flow regulating valve 235 and the fourth temperature sensor 236 respectively. The controller 24 can receive the temperatures collected by the third temperature sensor 234 and the fourth temperature sensor 236. The controller 24 can adjust the flow of the second flow regulating valve 235 according to the temperatures collected by the third temperature sensor 234 and the fourth temperature sensor 236. The difference between the temperature collected by the fourth temperature sensor 236 and the temperature collected by the third temperature sensor 234 can be used to determine the cooling amount of the silicon powder in the tank body 21. That is, by adjusting the flow of the second flow regulating valve 235, the cooling amount of the silicon powder in the tank body 21 can be controlled.

[0132] In Figure 5In the shown embodiment, the tank body 21 is divided into a first tank body part 213 in the shape of an hourglass and a second tank body part 214 in the shape of a cylinder. Nitrogen gas entering the tank body 21 through the first gas inlet 211 can uniformly contact the silicon powder in the tank body 21. The hourglass shape of the first tank body part 213 can prevent the silicon powder from being blown up by the nitrogen gas and thus blocking the first gas outlet 212. The cooling pipeline 231 is arranged on the side wall of the tank body 21 in a coiled manner, which can more fully contact the tank body 21 and thus improve the cooling efficiency. The controller can adjust the second flow regulating valve 235 according to the temperatures collected by the third temperature sensor 234 and the fourth temperature sensor 236, which can facilitate the control of the temperature of the silicon powder in the tank body 21.

[0133] Obviously, persons having ordinary skill in the art can make various modifications and variations to the embodiments of the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the embodiments of the present application belong to the scope of the claims of the present application and their equivalent technologies, the present application also intends to include these modifications and variations.

Claims

1. A silicon dust upgrading plant, characterized by, The device comprises a tank, a gas sensor, a cooling device, a controller, a connecting component and a heating device, wherein, the bottom of the tank is provided with a first gas inlet, the top of the tank is provided with a first gas outlet, and the tank is used for containing silicon powder; the gas sensor is arranged at the first gas outlet, and the cooling device is arranged on the side wall of the tank; the gas sensor is used for collecting the gas concentration at the first gas outlet; the bottom of the heating device is provided with a second gas inlet, and the top of the heating device is provided with a second gas outlet; the second gas outlet is connected with the first gas inlet through the connecting component; the second gas inlet is used for inputting nitrogen into the heating device; and the second gas outlet is used for outputting heated nitrogen to the tank; the controller is connected with the gas sensor, the connecting component, the cooling device and the heating device respectively; and the controller is used for controlling the connecting component, the cooling device and the heating device according to the gas concentration collected by the gas sensor.

2. The device according to claim 1, wherein, the second gas inlet is arranged on a first side of the bottom of the heating device; the second gas outlet is arranged on a second side of the top of the heating device. the heating device is provided with a gas transmission pipeline, a first inlet and a first outlet, wherein, 3. The apparatus of claim 1 or 2, wherein, one end of the gas transmission pipeline is connected with the second gas inlet, and the other end of the gas transmission pipeline is connected with the second gas outlet; the first inlet is arranged on the top of the heating device, and the first outlet is arranged on the bottom of the heating device; the first inlet is used for inputting a heating medium into the cavity of the heating device; and the first outlet is used for discharging the cooled heating medium. a first electromagnetic valve is arranged at the first inlet, wherein, 4. The apparatus of claim 3, wherein, the first electromagnetic valve is connected with the controller; the controller is used for sending a first instruction to the first electromagnetic valve when the gas concentration is less than or equal to a preset threshold value; the first instruction is used for controlling the electromagnetic valve to be closed, so as to stop inputting the heating medium into the cavity of the heating device through the first inlet; the controller is also used for sending a second instruction to the first electromagnetic valve after receiving a start working instruction; the second instruction is used for controlling the electromagnetic valve to be opened, so as to input the heating medium into the cavity of the heating device through the first inlet.

5. The device according to claim 3, wherein, the first inlet is provided with a first temperature sensor and a first flow regulating valve; the first outlet is provided with a second temperature sensor; the controller is connected with the first temperature sensor, the second temperature sensor and the first flow regulating valve respectively; the controller is used for adjusting the first flow regulating valve according to the temperature collected by the first temperature sensor and the temperature collected by the second temperature sensor. the number of the gas transmission pipelines is plural, wherein, 6. The apparatus of claim 3, wherein, one end of each gas transmission pipeline is connected with the second gas inlet respectively; the other end of each gas transmission pipeline is connected with the second gas outlet respectively. ​ 7. The apparatus of claim 1 or 2, wherein, The tank body comprises a first tank body part and a second tank body part, the first tank body part and the second tank body part are communicated, wherein, The first tank body part is located below the second tank body part; The first tank body part is in the shape of an hourglass, and the second tank body part is in the shape of a cylinder.

8. The apparatus of claim 1 or 2, wherein, The cooling device comprises a cooling pipeline, and the cooling pipeline is spirally arranged on the side wall of the tank body, wherein, The cooling pipeline comprises a second inlet and a second outlet, the second inlet is arranged above the cooling pipeline, and the second outlet is arranged below the cooling pipeline; The second inlet is used for inputting refrigerant into the cooling pipeline, and the second outlet is used for discharging refrigerant in the cooling pipeline.

9. The device according to claim 8, wherein, A third temperature sensor and a second flow regulating valve are arranged at the second inlet; A fourth temperature sensor is arranged at the second outlet; The controller is connected with the third temperature sensor, the fourth temperature sensor and the second flow regulating valve respectively; The controller is used for regulating the second flow regulating valve according to the temperature collected by the third temperature sensor and the temperature collected by the fourth temperature sensor.

10. The apparatus of claim 1 or 2, wherein, The controller is specifically used for: After receiving a starting work instruction, controlling the heating device to start working and acquiring the gas concentration collected by the gas sensor; When detecting that the gas concentration is less than or equal to a preset threshold, controlling the heating device to stop working and controlling the cooling device to start working.

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