Resonant structure and filter
By changing the connection method and capacitance value of the inductor components, the number of inductor components and space occupation are reduced, solving the problem of large size of traditional high-pass filters, and realizing a smaller resonant structure and better filtering performance.
Patent Information
- Application Number
- CN202422560785.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-22
- Publication Date
- 2025-10-21
- Estimated Expiration
- 2034-10-22
AI Technical Summary
Traditional high-pass filter structures require the introduction of a large number of inductor components, resulting in a large size that is difficult to integrate into chips. Existing miniaturization improvements can only reduce the size to a certain extent.
A T-type inductor device is formed by connecting the first and second inductor elements. By adjusting the capacitance value and connection method of the capacitor element, the number of inductor elements and space occupation are reduced while maintaining the filtering performance.
This achievement enables further miniaturization of the resonant structure, reduces integration difficulty, and adjusts out-of-band suppression characteristics while maintaining filtering performance.
Smart Images
Figure CN223462993U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductors, in particular to a resonance structure and a filter. Background Art
[0002] Traditional high-pass filter structures require a large number of inductive components, so they usually require a relatively large space to implement. The size of passive high-pass devices is often related to the wavelength of the operating frequency and is usually large, making it difficult to integrate them into chips.
[0003] In the prior art, the improvement of the filter is typically based on a miniaturized high-pass filter structure with a multi-section LC structure, and the wavelength ratio is about 10 -3 , can only bring about a certain size reduction effect, but cannot reduce the structural size to a greater extent. Utility Model Content
[0004] In view of the above-mentioned defects of the prior art, the technical problem to be solved by the present invention is how to adjust the resonant structure to reduce the size of the resonant structure.
[0005] In order to solve at least one of the above-mentioned technical problems, the present invention discloses a resonant structure and a filter.
[0006] According to one aspect of the present disclosure, there is provided a resonant structure, comprising:
[0007] a first inductive element and a second inductive element;
[0008] a first capacitive element, a second capacitive element, and a third capacitive element;
[0009] The first inductive element comprises a first end and a second end connected to the second capacitive element and the third capacitive element respectively;
[0010] The first end of the second inductor is connected to the center tap of the first inductor, and the second end of the second inductor is grounded; the inductance of the path from the first end of the first inductor to the first end of the second inductor is equal to the inductance from the second end of the first inductor to the first end of the second inductor;
[0011] Both ends of the first capacitor element are connected in parallel with the first end of the second capacitor element and the second end of the first capacitor element, respectively.
[0012] In some possible embodiments, the resonant structure comprises a stacked body;
[0013] The first inductive element is formed by a coil-shaped conductor formed in the laminate, and the second inductive element is formed by a zigzag-shaped conductor formed in the laminate.
[0014] The first end of the zigzag-shaped conductor is connected to a center tap position of the coil-shaped conductor using a connecting conductor; wherein the center tap position is a position on the coil-shaped conductor corresponding to half of an effective inductance value of the first inductive element.
[0015] In some possible embodiments, the conductor width of the connecting conductor is greater than the conductor width of the coil-shaped conductor and greater than the conductor width of the zigzag-shaped conductor.
[0016] In some possible embodiments, the distance between the coil of the coil-shaped conductor located close to the side of the zigzag-shaped conductor and the zigzag-shaped conductor is greater than a preset conductor distance.
[0017] In some possible embodiments, the laminate has metal layers and insulating layers;
[0018] The first capacitor element is formed by a first electrode plate, a first insulating layer and a second electrode plate opposite to each other in the stacking direction of the metal layers and the insulating layers;
[0019] The second capacitor element is formed by a third electrode plate, a second insulating layer and a fourth electrode plate opposite to each other in the stacking direction of the metal layers and the insulating layers;
[0020] The third capacitor element is formed by a fifth electrode plate, a second insulating layer and a sixth electrode plate opposite to each other in the stacking direction of the metal layers and the insulating layers.
[0021] In some possible embodiments, the capacitance value of the second capacitor element is equal to the capacitance value of the third capacitor element.
[0022] The capacitance value of the second capacitor element and the capacitance value of the third capacitor element are at least 5 times the capacitance value of the first capacitor element.
[0023] In some possible embodiments, the resonant structure is arranged on a substrate; in a direction perpendicular to the substrate, the projection of the first inductive element and the projection of the first capacitor element at least partially overlap.
[0024] In some possible embodiments, the resonant structure is arranged on a substrate; in a direction perpendicular to the substrate, the projection of the first inductive element and the projection of the second inductive element do not overlap.
[0025] In some possible embodiments, the resonant structure further includes a first port and a second port;
[0026] a high pass filter characteristic is displayed between the first port and the second port.
[0027] According to a second aspect of the present disclosure, there is provided a filter comprising a resonant structure as described above.
[0028] The utility model discloses, has following beneficial effects:
[0029] In the utility model, by changing the connecting mode between inductance elements, the first inductance element is connected with the second inductance element, and is integrated into a T-shaped inductor, compared with parallel arrangement of inductance elements, the space occupied by inductance elements can be reduced, so that the size of the resonant structure is reduced, and the filter performance of the resonant structure is considered. BRIEF DESCRIPTION OF DRAWINGS
[0030] In order to more clearly illustrate the technical scheme of the utility model, the following will be to or the drawings needed to be used in the prior art description are simply introduced, and obviously, the drawings in the following description are only some embodiments of the utility model, and for those skilled in the art, under the premise of not creating labor, other drawings can also be obtained according to these drawings.
[0031] Figure 1 A resonant structure plane layout corresponding to the resonant structure provided by the embodiments of the utility model;
[0032] Figure 2 A circuit principle diagram corresponding to the resonant structure provided by the embodiments of the utility model;
[0033] Figure 3 A resonant structure three-dimensional layout corresponding to the resonant structure provided by the embodiments of the utility model;
[0034] Figure 4 The structure side view of the second / third capacitor element provided by the embodiments of the utility model;
[0035] Figure 5 The arrangement layout of the T-shaped inductance structure in the prior art;
[0036] Figure 6 The application provided by the embodiments of the utility modelFigure 1 Filter simulation data graph of the resonant structure.
[0037] The above reference numerals correspond to: 1 - laminate, 2 - center tap position, 3 - connecting conductor, 4 - substrate, 5 - first port, 6 - second port, L1 - first inductive element, L2 - second inductive element, LA1 - coil-like conductor, LA2 - zigzag-like conductor, C1 - first capacitive element, CA1 - first plate, CA2 - second plate, C2 - second capacitive element, CA3 - third plate, CA4 - fourth plate, C3 - third capacitive element, CA5 - fifth plate, CA6 - sixth plate, K1 - first via, K2 - second via, M1 - first metal plate, M2 - second metal plate, M3 - third metal plate, M4 - fourth metal plate, M5 - fifth metal plate, M6 - sixth metal plate, CB1 - first insulating layer, CB2 - second insulating layer, CB3 - third insulating layer. DETAILED DESCRIPTION
[0038] The technical solutions in the embodiments of the present specification will be described clearly and completely below in combination with the drawings in the embodiments of the present specification. Obviously, the described embodiments are only some of the embodiments of the present specification, rather than all the embodiments. Based on the embodiments in the present specification, all other embodiments obtained by those skilled in the art without creative work belong to the protection scope of the present specification.
[0039] It should be noted that the terms "first", "second" and the like in the description and claims of the present specification and the above drawings are used to distinguish similar objects, and do not necessarily indicate a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present specification described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or server including a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products or devices.
[0040] Various exemplary embodiments, features and aspects of the present disclosure will be described in detail below with reference to the accompanying drawings. The same reference numerals in the drawings represent functionally the same or similar elements. Although various aspects of the embodiments are shown in the drawings, the drawings are not necessarily drawn to scale unless specifically indicated.
[0041] The word "exemplary" is used herein in the sense of being an example, illustration, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as being superior to or better than other embodiments.
[0042] The term "and / or", merely describes an associated relationship between associated objects, which means that there can be three relationships, for example, A and / or B, which means that there are three cases of A alone, A and B together, and B alone. In addition, the term "at least one" herein means any one of the plurality or any combination of at least two of the plurality, for example, including at least one of A, B and C, which means including any one or more elements selected from the set consisting of A, B and C.
[0043] In addition, in order to better illustrate the present disclosure, numerous specific details are given in the specific embodiments below. Those skilled in the art should understand that the present disclosure can also be implemented without certain specific details. In some examples, methods, means, elements and circuits well known to those skilled in the art are not described in detail, in order to highlight the main idea of the present disclosure.
[0044] Embodiment one:
[0045] Figure 1 A resonant structure plane layout corresponding to the resonant structure provided by the utility model embodiment; accordingly, Figure 2 A circuit schematic diagram corresponding to the resonant structure plane layout; please refer to Figure 1 Or Figure 2 A resonant structure, comprising:
[0046] A first inductive element L1 and a second inductive element L2;
[0047] A first capacitive element C1, a second capacitive element C2 and a third capacitive element C3;
[0048] The first inductive element L1 includes a first end and a second end connected to the second capacitive element C2 and the third capacitive element C3 respectively, the first end of the second inductive element L2 is connected to the center tap of the first inductive element L1, and the second end of the second inductive element L2 is grounded;
[0049] Wherein, the inductance value of the path from the first end of the first inductive element L1 to the first end of the second inductive element L2 is equal to the inductance value from the second end of the first inductive element L1 to the first end of the second inductive element L2.
[0050] The first end of the first capacitive element C1 is connected in parallel to the first end of the second capacitive element C2, and the second end of the first capacitive element C1 is connected in parallel to the second end of the third capacitive element C3.
[0051] The capacitance value of the second capacitor element C2 is equal to the capacitance value of the third capacitor element C3; and the capacitance value of the second capacitor element C2 and the capacitance value of the third capacitor element C3 are at least 5 times the capacitance value of the first capacitor element C1.
[0052] As shown in Figure 1 Or Figure 2 The resonant structure includes two inductance elements, i.e., a first inductance element L1 and a second inductance element L2, and three capacitor elements, i.e., a first capacitor element C1, a second capacitor element C2, and a third capacitor element C3. The second capacitor element C2 and the third capacitor element C3 are two identical capacitor elements with the same parameters, and the capacitance value of the second capacitor element C2 and / or the capacitance value of the third capacitor element C3 is much larger than the capacitance value of the first capacitor element C1. For example, the capacitance value of the second capacitor element C2 and / or the capacitance value of the third capacitor element C3 can be five times or more than the capacitance value of the first capacitor element C1, i.e., C2=C3=5*C1. By setting the difference between the capacitance values, the suppression performance of the resonant structure on the interference signal, i.e., the out-of-band suppression characteristic, can be effectively adjusted.
[0053] The first end of the first capacitor element C1 is electrically connected to the first end of the second capacitor element C2 to realize parallel connection of the first capacitor element C1 and the second capacitor element C2. The second end of the first capacitor element C1 is electrically connected to the second end of the third capacitor element C3 to realize parallel connection of the first capacitor element C1 and the third capacitor element C3. The first end of the first inductance element L1 is connected to the second end of the second capacitor element C2 in series, the second end of the first inductance element L1 is connected to the first end of the third capacitor element C3, the first end of the second inductance element L2 is connected to the center tap of the first inductance element L1, and the second end of the second inductance element L2 is grounded, thereby forming a resonant structure. The center tap can be a position on the first inductance element L1 such that the inductance value of the path from the first end of the first inductance element L1 to the first end of the second inductance element L2 is equal to the inductance value from the second end of the first inductance element L1 to the first end of the second inductance element L2.
[0054] The distance between the first inductance element L1 and the second inductance element L2 arranged on the substrate 4 is adjusted so that no mutual coupling effect occurs between the first inductance element L1 and the second inductance element L2. The connection mode of the second inductance element L2 and the first inductance element L1 is direct connection through a via. Direct connection of the first inductance element L1 and the second inductance element L2 through the via can reduce the loss of signal transmission in the resonant structure.
[0055] The resonant structure can realize the same effect as that of two L1 / 2 inductors and two 2L2 inductors in a traditional structure.
[0056] In another embodiment, the resonant structure further comprises a first port 5 and a second port 6; and a high-pass filtering characteristic is shown between the first port 5 and the second port 6.
[0057] In another embodiment, the middle axis can be a straight line passing through the center point of the first inductive element L1 and being perpendicular to the first inductive element L1. Figure 2 The dashed line passing through the first capacitive element C1, the first inductive element L1 and the second inductive element L2 is the middle axis.
[0058] The middle axis and the symmetrical arrangement of the resonant structure are only a description of the arrangement of the multiple elements in the resonant structure; the straight line on which the resonant structure is symmetrical can be determined as the middle axis, instead of strictly determining the position of the middle axis according to the foregoing description; in addition, the resonant structure can not be arranged symmetrically in terms of position.
[0059] In another embodiment, the first inductive element L1 can be considered as two parts along its center, and the part of the first inductive element L1 on the left side of the center can be considered as the first part, and the part of the first inductive element L1 on the right side of the center can be considered as the second part, wherein the position of the center can be the position corresponding to the inductance value of one half of the inductance value of the first inductive element L1; then the first part of the first inductive element L1, the second capacitive element C2 and the second inductive element L2 can be considered as one resonator, and the second part of the first inductive element L1, the third capacitive element C3 and the second inductive element L2 can be considered as one resonator, so that the number of resonators is reduced to reduce the size of the resonant structure, and the good filtering performance corresponding to multiple resonators is substantially retained, so that the filtering performance of the resonant structure is considered, and the size of the resonant structure is reduced.
[0060] In another embodiment, the number of capacitive elements connected in parallel with the first capacitive element C1 can also be multiple, for example, four, and the number of capacitive elements connected in parallel with the first capacitive element C1 is not limited, and the number of the first capacitive element C1 is also not limited, as long as multiple capacitive elements can be connected to be equivalent to the corresponding capacitance value of the first capacitive element C1, and the resonant structure can be symmetrical along the central axis.
[0061] In another embodiment, the number of inductive elements can be multiple, for example, three, the first inductive element L1 in the foregoing embodiment is replaced by two L1 / 2 inductors, and the second inductive element L2 is connected to the middle position of the two L1 / 2 inductors, so that the three inductors are integrated into a T-shaped inductor, and the same filtering effect as the resonant structure in the foregoing embodiment is achieved. Figure 1
[0062] Embodiment two:
[0063] Figure 3 A resonant structure three-dimensional layout corresponding to the resonant structure provided by the embodiment of the utility model is shown; refer to Figure 1 and Figure 3 The arrangement mode of the resonant structure can be:
[0064] The resonant structure is arranged on the substrate 4.
[0065] The resonant structure can be arranged on the substrate 4, and the selection of the substrate is not limited in the utility model, and ceramic materials, resin materials, semiconductor substrates and other materials can be selected as the substrate; the resonant structure can be integrated in a chip, a PCB, a packaging substrate and other systems.
[0066] In another specific embodiment, the resonant structure can also be embedded in the substrate 4, so as to reduce the thickness of the resonant structure to a certain extent.
[0067] The resonant structure has a laminated body 1; the laminated body 1 has a plurality of insulating layers and a plurality of metal layers;
[0068] The resonant structure can be regarded as a laminated body 1, which can include a plurality of metal layers and a plurality of insulating layers; the metal layers and the insulating layers can cooperate with each other to form a plurality of elements on the laminated body.
[0069] The first inductor L1 is composed of a coil-shaped conductor LA1 formed on the laminated body 1, and the second inductor L2 is composed of a zigzag-shaped conductor LA2 formed on the laminated body 1; the first end of the zigzag-shaped conductor LA2 is connected to the center tap position 2 of the coil-shaped conductor LA1 using a connection conductor 3 in a via direct connection manner;
[0070] The center tap position 2 is a position corresponding to one-half of the effective inductance value of the first inductor L1 on the coil-shaped conductor LA1; the conductor width of the connection conductor 3 is greater than the conductor width of the coil-shaped conductor LA1 and the conductor width of the zigzag-shaped conductor LA2; the distance between the coil of the coil-shaped conductor LA1 located near the zigzag-shaped conductor LA2 and the zigzag-shaped conductor LA2 is greater than a preset conductor distance.
[0071] For the inductors, the first inductor L1 can be formed by the coil-shaped conductor LA1, and the second inductor L2 can be formed by the zigzag-shaped conductor LA2, so as to reduce the size occupied by the inductors in the resonant structure.
[0072] For the connection mode of the coil-shaped conductor LA1 and the zigzag-shaped conductor LA2, the first end of the connection conductor 3 is connected to the center tap position 2 of the coil-shaped conductor LA1, and the second end of the connection conductor 3 is connected to the first end of the zigzag-shaped conductor LA2, and the two conductors are connected in a via direct connection manner; the center tap position 2 can be a position corresponding to one-half of the effective inductance value of the first inductor L1 on the coil-shaped conductor LA1; the via direct connection of the two conductors can reduce the loss; the connection of the two conductors by the connection conductor 3 can ensure that the distance (i.e. Figure 3 The distance between the two conductors (i.e., S) is greater than a preset conductor distance, so as to reduce the coupling between the two conductors as much as possible and avoid the influence of the coupling between the conductors on the overall performance of the resonant structure.
[0073] Among them, in order to ensure the stability of the connection between the connecting conductor 3 and the two conductors, the width of the connecting conductor 3 can be set to be greater than the width of the coiled conductor LA1, and the width of the connecting conductor can be greater than the width of the zigzag conductor LA2; the preset conductor distance can be the minimum spacing that can make the configuration of the elements in the resonant structure meet the arrangement rules, that is, the preset conductor distance can be the minimum distance corresponding to the structural processing capability; the conductor distance between the coiled conductor LA1 and the zigzag conductor LA2 can be the distance between the outermost coil located on the side close to the zigzag conductor LA2 in the multi-layer coil of the coiled conductor LA1 and the zigzag conductor LA2, Figure 3 In the embodiment shown, the zigzag conductor LA2 includes a long portion and a short portion, both of which are straight line segments. The straight line where the long portion is located is a first straight line. On the side of the coiled conductor LA1 close to the zigzag conductor LA2, there is a point with the shortest vertical distance to the first straight line. The vertical distance between the point and the first straight line is Figure 3 The distance S shown in ; for example, if the preset conductor distance is S1, the conductor distance between the coiled conductor LA1 and the zigzag conductor LA2 can be S1+n, that is, the conductor distance can be any value greater than the preset conductor distance; there is no restriction on the range of S1 and n, as long as the smallest possible value can be selected on the basis of being able to achieve structural processing.
[0074] The first capacitive element C1 is composed of a first electrode plate CA1, a first insulating layer CB1 and a second electrode plate CA2 that are opposite to each other in the stacking direction of the metal layer and the insulating layer;
[0075] The second capacitive element C2 is composed of a third plate CA3, a second insulating layer CB2, and a fourth plate CA4 that are opposite to each other in the stacking direction of the metal layer and the insulating layer;
[0076] The third capacitive element C3 is formed by a fifth plate CA5 , a third insulating layer CB3 , and a sixth plate CA6 , which are opposite to each other in the stacking direction of the metal layer and the insulating layer.
[0077] like Figure 3 As shown, for the capacitor elements, each capacitor element is composed of at least two electrodes and an insulating layer sandwiched between the electrodes; for the first capacitor element C1, an interdigitated capacitor, i.e., a MOM capacitor (Metal-Oxide-Metal, metal-oxide-metal) can be selected, and the first electrode CA1 in the first capacitor element C1 can be a first interdigitated plate, the second electrode CA2 can be a second interdigitated plate, and the first insulating layer CB1 can be an insulating layer between the two interdigitated plates; the use of MOM capacitors can improve the compactness of the device layout and reduce the layout area of the bandpass filter when the parameter requirements of the coupling capacitor are large.
[0078] Since the second capacitor element C2 and the third capacitor element C3 are of the same capacitance, Figure 4 The side view of the capacitor structure shown in FIG. 2 can correspond to the second capacitor element C2 or the third capacitor element C3; as shown in FIG. 3, Figure 4 For the second capacitor element C2 and the third capacitor element C3, a MIM capacitor (Metal-Insulator-Metal) can be selected; in the second capacitor element C2, the third plate CA3 can include a first metal layer M1, a first via K1 and a second metal layer M2, the fourth plate CA4 can be a third metal layer M3, and a second insulating layer CB2 is between the second metal layer M2 and the third metal layer M3; similarly, the fifth plate CA5 can include a fourth metal layer M4, a second via K2 and a fifth metal layer M5, the sixth plate CA6 can be a sixth metal layer M6, and a third insulating layer CB3 is between the fifth metal layer M5 and the sixth metal layer M6.
[0079] It should be understood that in the embodiment, the first capacitor element C1 uses an interdigital capacitor, and the second capacitor element C2 and the third capacitor element C3 are designed using a MIM capacitor, which is only a preferred technical solution. Any capacitor that can improve the out-of-band suppression performance and affect the passband performance can be selected as a device when designing a layout by a person skilled in the art.
[0080] In addition, the arrangement distance of each conductor and insulating layer in the stack, such as the winding spacing of the coil-shaped conductor LA1, or the distance between two capacitor elements, is not limited, as long as it meets the circuit design rules and facilitates wiring, and the spacing is as small as possible.
[0081] In a direction perpendicular to the substrate 4, the projection of the first inductor element L1 at least partially overlaps the projection of the first capacitor element C1; in a direction perpendicular to the substrate 4, the projection of the first inductor element L1 does not overlap the projection of the second inductor element L2.
[0082] Preferably, in order to reduce the mutual coupling effect between the first inductor element L1 and the second inductor element as much as possible, the projection area of the first inductor element L1 and the projection area of the second inductor element L2 can be arranged to have no overlapping part in the direction perpendicular to the substrate 4, so as to ensure that the first inductor element L1 and the second inductor element L2 are directly separated by a distance greater than a predetermined conductor distance, thereby reducing the mutual coupling coefficient between the inductors.
[0083] Preferably, the positions of the first inductor L1 and the first capacitor C1 on the substrate 4 are set so that the projected area of the first inductor L1 and the projected area of the first capacitor C1 overlap at least partially in the direction perpendicular to the substrate 4, thereby reducing the layout area.
[0084] In another specific embodiment, the resonant structure can also be embedded in the substrate 4, thereby reducing the thickness of the resonant structure to a certain extent.
[0085] In another specific embodiment, the projected area of the first inductor L1 and the projected area of the first capacitor C1 can also not overlap in the direction perpendicular to the substrate 4.
[0086] The size-to-wavelength ratio of the resonant structure corresponds to a value of 10 -4 order of magnitude; the size-to-wavelength ratio is determined based on the size of the resonant structure and the wavelength of the signal to be processed.
[0087] The size of the resonant structure can be the area occupied by the plurality of elements included in the resonant structure; for example Figure 1 As shown, the size is 120 μm from the end of the first capacitor C1 away from other elements to the end of the second inductor L2 away from other elements, and the size is 130 μm from the end of the second capacitor C2 away from other elements to the end of the third capacitor C3 away from other elements, so the size of the resonant structure can be 120 μm x 130 μm; the wavelength can be the wavelength corresponding to the signal to be processed by the resonant structure, i.e., the wavelength of the signal to be processed; and the size-to-wavelength ratio can be the ratio of the area of the size of the resonant structure to the wavelength, wherein the area of the wavelength can be obtained based on wavelength * wavelength.
[0088] The resonant structure with the laminated body 1 formed based on the above arrangement can have a size-to-wavelength ratio of 10 -4 order of magnitude, compared to most size-to-wavelength ratios of 10 -5 order of magnitude in the prior art, the resonant structure can significantly reduce the size, and the effect will be verified in the subsequent specific simulation process.
[0089] The resonant structure disclosed in the utility model can be integrated in a filter, a diplexer, an amplifier, or any application scenario that can adapt to the resonant structure.
[0090] In the prior art, for the arrangement of the T-shaped inductor structure, each inductor in the T-shaped inductor structure is usually set as a coil, such as Figure 5As shown, two coil conductors are formed into two inductors and connected in series, while a coil conductor is connected in parallel at a position between the two coil conductors, forming a third inductor, that is, the prior art T-shaped inductor structure mostly uses three inductor elements, and each inductor element is formed by a coil conductor; and according to the embodiment and Figures 1-4 It can be seen that the inductor element group C included in the resonant structure can be formed into a first inductor element L1 by a coil conductor, and a second inductor element L2 by a zigzag conductor, and the second inductor element L2 is connected in parallel at the center tap position 2 of the first inductor element L1, that is, the T-shaped inductor structure disclosed by the utility model can be formed by at least two inductor elements, and one of the inductor elements can also be formed by a zigzag conductor; compared with the prior art, the resonant structure disclosed by the application reduces the use of coil conductors in the arrangement design, thereby reducing the size of the inductor element in the resonant structure; at the same time, the working performance of the resonant structure can also be considered.
[0091] Embodiment three:
[0092] In another embodiment, the resonant structure can also use the following arrangement:
[0093] The resonant structure includes at least two conductive layers and at least one insulating layer;
[0094] The at least two conductive layers are configured as a first capacitor element C1, a second capacitor element C2 and a third capacitor element C3; the first inductor element L1 is formed into a coil shape by at least one conductive layer; and the second inductor element L2 is formed by the at least one conductive layer;
[0095] The at least one insulating layer is arranged between the at least two conductive layers.
[0096] In a specific embodiment, the resonant structure is arranged on a substrate 4, the first capacitor element C1 can be arranged on one conductive layer, and the second capacitor element C2 and the third capacitor element C3 can be arranged on another conductive layer, that is, the at least two conductive layers are configured as the first capacitor element C1, the second capacitor element C2 and the third capacitor element C3; the first inductor element L1 can be arranged in a coil shape on one conductive layer, and the second inductor element L2 can be arranged on the same conductive layer as the first inductor element L1.
[0097] In another specific embodiment, the first inductor element L1 can also be arranged in a coil shape on multiple conductive layers.
[0098] In another specific embodiment, the first inductive element L1 and the second inductive element L2 can also be formed separately on one conductive layer, i.e., the first inductive element L1 and the second inductive element L2 are formed on different conductive layers, respectively.
[0099] In another specific embodiment, the second capacitive element C2 and the third capacitive element C3 can also be formed separately on one conductive layer, i.e., the second capacitive element C2 and the third capacitive element C3 are formed on different conductive layers, respectively.
[0100] The elements are arranged in a stacked manner to form the resonant structure, which can reduce the size of the resonant structure in the horizontal direction.
[0101] Embodiment Four
[0102] Further, the resonant structure can be applied to a high-pass filter. Figure 6 The application provided by the embodiments of the present application Figure 1 The simulation data graph corresponding to the filter of the resonant structure will be described below Figure 6 Further, the high-pass filter applied to the resonant structure is simulated to verify the filtering performance of the resonant structure.
[0103] The calculation formula of the transmission coefficient is:
[0104]
[0105] Among them, S 21 is the transmission coefficient, indicating the signal transmission strength from the first port to the second port, and the first port and the second port can be determined from Figure 2 their positions. is the reflection coefficient, and the calculation formula is:
[0106]
[0107] Among them, Z0 is the terminal impedance, and are respectively the odd-mode input impedance and the even-mode input impedance of one half of the circuit with the central axis as the boundary line; let S 21 = 0, the calculation formula of the transmission coefficient and the calculation formula of the reflection coefficient can be derived based on and then formula (1) is obtained:
[0108]
[0109] Wherein, L1 can be the inductance value of the first inductive element, L2 can be the inductance value corresponding to the second inductive element, C1 can be the capacitance value of the first capacitive element, C2 can be the capacitance value of the second capacitive element, and C3 can be the capacitance value of the third capacitive element; since C2=C3, C2 can be used instead of C3 in each formula;
[0110] Solving this formula (1), we can get:
[0111] k1f 4 +k2f 2 +k3=0 (2)
[0112] Wherein,
[0113] k1=32π 4 C1C2L1(L1+L2)
[0114] k2=-4π 2 (4C1L1+C2L2+2C1L2)
[0115]
[0116] When C1>>C0, formula (2) can be simplified as:
[0117] k1f 2 +k2=0 (3)
[0118] From the formula, the transmission zero point is:
[0119]
[0120] According to each formula in the above theoretical derivation, when C2>>C1, the transmission zero point will not be affected by C2, so it can be concluded that by adjusting the capacitance value of the second capacitive element and the capacitance value of the third capacitive element, the suppression ability of the resonant structure to the interference signal can be realized. Preferably, by reducing the capacitance value of the second capacitive element and the capacitance value of the third capacitive element, the out-of-band suppression characteristics of the resonant structure can be effectively adjusted.
[0121] In addition, by adjusting C1, C2, L1, and L2, i.e., adjusting the parameters of each capacitive element and the parameters of each inductive element, the working frequency band and the transmission zero point of the resonant structure can be adjusted to realize the filtering of signals of different frequencies.
[0122] Figure 6The simulation result of the high-pass filter adopting the resonant structure is shown, and the parameters of the high-pass filter are C1=99fF, C2=C3=500fF, L1=490pH, and L2=12pH, in this embodiment, C2=C3=5*C1. The filter adopting the resonant structure generates a transmission zero point at a frequency point of 34GHz; in a frequency band greater than 30GHz, the loss is about 0.1dB, and the return loss is about 15dB; in a frequency band from 7GHz to 20GHz, the out-of-band rejection is from 20dB to 50dB.
[0123] In the embodiment of the present application, the resonant structure is formed based on the structure layout shown in the figure and / or based on the circuit schematic diagram shown in the figure. Figure 1 Figure 2 The resonant structure can be designed and realized based on a 0.13mu m SiGe BiCMOS process (an integrated circuit process combining a silicon germanium alloy SiGe and a bipolar transistor BiCMOS), and the size of the resonant structure, i.e., the area occupied by the plurality of elements included in the resonant structure, can be 0.12*0.13mm 2 The wavelength corresponding to the center frequency point 30GHz can be 10mm, and the size-to-wavelength ratio can be 1.56*10 -4 Compared with a traditional structure, such as a miniaturized high-pass filter structure based on a multi-section LC structure, the resonant structure of the present application realizes an extremely compact layout size, and the size-to-wavelength ratio is only one-tenth of that of the traditional structure, effectively reducing the size of the resonant structure.
[0124] The present application also relates to a filter, which comprises the resonant structure described above; it should be noted that the resonant structure described above can be applied to a high-pass filter, or other filters capable of achieving the same technical effect; for different filters, by adjusting the parameters of each inductance element in the inductance element group and the parameters of each capacitance element in the capacitance element group in the resonant structure, the working frequency band and the transmission zero point of the filter are adjusted to realize the filtering of signals of different frequencies.
[0125] The present application also relates to an electronic device, which comprises the resonant structure or the filter described above; it should be noted that the electronic device can be any device capable of carrying the resonant structure or the filter, such as a WIFI, a drone, a radio frequency transmitter, a radar transceiver, etc.
[0126] According to the above-mentioned embodiments of the utility model provide, through change the connection mode between each inductance element, connect first inductance element and second inductance element, and integrate both as a T type inductor device, compared with inductance element parallel arrangement, can reduce the space occupied by inductance element, thereby reduce the size of resonant structure, simultaneously, second inductance element is connected with the center tap of first inductance element respectively, make a half of first inductance element, second inductance element and capacitor element group, and the other half of first inductance element, second inductance element and capacitor element group, respectively constitute a resonator, can reduce the number of inductance element while giving consideration to the filtering performance of resonant structure, thereby can reduce the size of resonant structure to some extent, in addition, set up capacitor element group, through adjusting the capacitance value of capacitor element in capacitor element group, can realize the adjustment of the out-of-band rejection characteristic of resonant structure.
[0127] It is to be understood that the above description is intended to be illustrative, and not restrictive. Many other embodiments will be apparent to those of skill in the art upon reviewing the above description. The scope of the technology encompasses all technical solutions falling within the scope of the claims. The technical solutions described herein are intended to achieve the principles of the technology, and should not be limited to the specific embodiments described herein. The choice of terms is intended to best explain the principles of the embodiments, practical applications, or improvements to the art in the market, or to enable other ordinary skilled persons in the art to understand the embodiments disclosed herein.
Claims
1. A resonant structure, characterized by, The resonant structure comprises: a first inductive element (L1) and a second inductive element (L2); a first capacitive element (C1), a second capacitive element (C2), and a third capacitive element (C3); The first inductive element (L1) comprises a first end and a second end connected with the second capacitive element (C2) and the third capacitive element (C3) respectively; The first end of the second inductive element (L2) is connected with the center tap of the first inductive element (L1), and the second end of the second inductive element (L2) is grounded; the inductance value of the path from the first end of the first inductive element (L1) to the first end of the second inductive element (L2) is equal to the inductance value from the second end of the first inductive element (L1) to the first end of the second inductive element (L2); The two ends of the first capacitive element (C1) are connected in parallel with the first end of the second capacitive element (C2) and the second end of the first capacitive element (C1) respectively.
2. A resonant structure according to claim 1, characterized in that The resonant structure has a laminated body (1); The first inductive element (L1) is composed of a coil-shaped conductor (LA1) formed in the laminated body (1), and the second inductive element (L2) is composed of a zigzag-shaped conductor (LA2) formed in the laminated body (1); The first end of the zigzag-shaped conductor (LA2) is connected with the center tap position (2) of the coil-shaped conductor (LA1) using a connecting conductor (3); wherein the center tap position (2) is a position corresponding to half of the effective inductance value of the first inductive element (L1) on the coil-shaped conductor (LA1).
3. A resonant structure according to claim 2, characterised in that The conductor width of the connecting conductor (3) is greater than the conductor width of the coil-shaped conductor (LA1), and the conductor width of the connecting conductor (3) is greater than the conductor width of the zigzag-shaped conductor (LA2).
4. A resonant structure according to claim 2, wherein The distance between the coil of the coil-shaped conductor (LA1) located near the side of the zigzag-shaped conductor (LA2) and the zigzag-shaped conductor (LA2) is greater than a preset conductor distance.
5. A resonant structure according to claim 2, wherein The laminated body (1) has a metal layer and an insulating layer; The first capacitive element (C1) is composed of a first plate (CA1), a first insulating layer (CB1), and a second plate (CA2) which are opposite to each other in the stacking direction of the metal layer and the insulating layer; The second capacitive element (C2) is composed of a third plate (CA3), a second insulating layer (CB2), and a fourth plate (CA4) which are opposite to each other in the stacking direction of the metal layer and the insulating layer; The third capacitive element (C3) is composed of a fifth plate (CA5), a third insulating layer (CB3), and a sixth plate (CA6) which are opposite to each other in the stacking direction of the metal layer and the insulating layer.
6. A resonant structure according to claim 5, wherein, The capacitance value of the second capacitive element (C2) is equal to the capacitance value of the third capacitive element (C3); The capacitance value of the second capacitive element (C2) and the capacitance value of the third capacitive element (C3) are at least 5 times the capacitance value of the first capacitive element (C1).
7. The resonant structure of claim 1, wherein, The resonant structure is arranged on a substrate (4); in a direction perpendicular to the substrate (4), a projection of the first inductive element (L1) at least partially overlaps a projection of the first capacitive element (C1).
8. The resonant structure of claim 1, wherein, The resonant structure is arranged on a substrate (4); in a direction perpendicular to the substrate (4), a projection of the first inductive element (L1) does not overlap a projection of the second inductive element (L2).
9. The resonant structure according to any of claims 1-8, characterized in that, The resonant structure further comprises a first port (5) and a second port (6); Between the first port (5) and the second port (6), a high-pass filter characteristic is exhibited.
10. A filter, characterized by, The filter comprises a resonant structure as claimed in any one of claims 1-9.