Height-increasing infrared transmitter

Abstract

The utility model discloses a heightened infrared transmitter, which comprises a substrate, pins, heightened columns, a wafer, a heightened table and a light-transmitting ball head, a circuit layer is arranged on the upper surface of the substrate, the pins are arranged on the face, away from the circuit layer, of the substrate, and the circuit layer is electrically connected with the pins. One end of the heightening column is connected with the circuit layer, and the wafer is arranged at the other end of the heightening column; the heightening table is connected to the upper surface of the base plate; a mounting groove is formed in the heightening table, the circuit layer, the heightening column and the wafer are located in the mounting groove, the height H1 of the heightening table is larger than or equal to 1.3 mm and smaller than or equal to 1.4 mm, and the light-transmitting ball head is arranged on the heightening table and corresponds to the wafer. The heightening table is heightened, so that the overall thickness of the heightened infrared transmitter is increased, and the heightening requirement of the infrared transmitter is met. And the heightening column is arranged, so that the distance between the wafer and the light-transmitting ball head is reduced, and the light-emitting angle of the wafer is increased.

Description

TECHNICAL FIELD

[0001] The utility model relates to infrared emitting device technical field, specifically, relate to a kind of high infrared emitter. BACKGROUND

[0002] Infrared LED emitting device includes substrate, wafer, pin, pad high platform and lens, substrate is equipped with circuit layer, wafer is electrically connected with circuit layer, pin is located at the bottom of substrate, and pin is connected with circuit layer. Pad high layer is located on the upper surface of substrate, and encapsulation circuit layer and wafer, lens is connected on the upper surface of pad high platform, and lens covers wafer.

[0003] Infrared LED emitting device is generally connected with circuit board by welding, and the pad high layer of traditional infrared LED emitting device is only 0.55mm, which cannot meet the installation requirement in some specific conditions, therefore, infrared LED emitting device needs to be raised. The current pad high method is divided into two kinds, one is to use a ring piece to pad high, the two ends of the ring piece are respectively abutted on infrared LED emitter and circuit board, the pin of infrared LED emitter is connected with circuit board after passing through the round hole of ring piece, to achieve the effect of increasing height. However, this pad high method is only suitable for small power devices.

[0004] Another scheme is to paste a layer of ceramic pad high sheet or PCB board under infrared LED emitter, which solves the problem of conduction and heat dissipation of high-power devices, but this pad high method needs twice SMT, so that the processing technology is complicated and the efficiency is low.

[0005] To solve the problems of the above two schemes, the existing technology increases the thickness of pad high layer to increase the overall height of infrared LED emitting device, so that the overall height of infrared LED emitting device meets the installation requirement. However, due to the high pad high platform, the pad high platform will block the light emitting angle of wafer, resulting in that the light emitting range of infrared LED emitting device becomes smaller. SUMMARY

[0006] In view of the deficiencies of the prior art, a high infrared emitter is provided.

[0007] To achieve the above purpose, the utility model provides a kind of high infrared emitter, including substrate, pin, high column, wafer, pad high platform and light transmission ball head;The upper surface of substrate is equipped with circuit layer, pin is located in the side of substrate away from circuit layer, and circuit layer is electrically connected with pin;One end of high column is connected with circuit layer, wafer is arranged at the other end of high column;Pad high platform is connected to the upper surface of substrate;Mounting groove is formed in pad high platform, circuit layer, high column and wafer are located in mounting groove, the height H1 of pad high platform is in the range of 1.3mm≤H1≤1.4mm, light transmission ball head is arranged on pad high platform, and light transmission ball head corresponds to wafer.

[0008] According to an embodiment of the present application, the heightening platform is formed by colloid injection molding filling.

[0009] According to an embodiment of the present application, the light-transmitting ball head is hemispherical.

[0010] According to an embodiment of the present application, the heightening column is made of gold-plated copper material.

[0011] According to an embodiment of the present application, the height H2 of the heightening column ranges from 0.8mm to 1.2mm.

[0012] According to an embodiment of the present application, the light-transmitting ball head is made of silica gel material, and its refractive index is 1.48.

[0013] According to an embodiment of the present application, the wafer is located on the central axis of the substrate.

[0014] According to an embodiment of the present application, the heightening platform and the light-transmitting ball head are integrally formed.

[0015] According to an embodiment of the present application, the substrate is a ceramic substrate.

[0016] The present application has the advantages that the substrate, the wafer, the heightening column, the heightening platform and the light-transmitting ball head are provided, the heightening platform is increased in height, the overall thickness of the heightening infrared emitter is increased, the heightening requirement of the infrared emitter is met, the heightening column is provided, the distance between the wafer and the light-transmitting ball head is reduced, the light-emitting angle of the wafer is increased, the heightening infrared emitter has both the increased overall height and the increased light-emitting angle, and the light-emitting range of the heightening infrared emitter is increased. BRIEF DESCRIPTION OF DRAWINGS

[0017] The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and serve to explain the principles of the application, and do not limit the application. In the drawings:

[0018] Figure 1 FIG. 1 is a perspective view of a heightening infrared emitter according to an embodiment of the present application;

[0019] Figure 2 FIG. 3 is a sectional view of the heightening infrared emitter according to an embodiment of the present application;

[0020] Figure 3 FIG. 4 is another perspective view of the heightening infrared emitter according to an embodiment of the present application.

[0021] Reference numerals

[0022] 1 - substrate; 2 - pin; 3 - riser; 4 - wafer; 5 - pad; 6 - light-transmitting ball; 10 - circuit layer. DETAILED DESCRIPTION

[0023] In the following, a plurality of embodiments of the present application will be disclosed with reference to the drawings. For the purpose of clear illustration, a plurality of practical details will be described in the following description. However, it should be appreciated that these practical details should not be used to limit the present application. That is, in some embodiments of the present application, these practical details are not necessary. In addition, for the purpose of simplifying the drawings, some conventional structures and components will be shown in the drawings in a simple schematic manner.

[0024] In addition, in the present application, the description such as "first", "second", etc. is only for the purpose of description, and does not mean to particularly indicate the order or sequence, nor to limit the present application. It is merely for the purpose of distinguishing components or operations described by the same technical terms. It should not be understood as indicating or implying the relative importance of the technical features indicated or the number of technical features. Therefore, the features defined as "first", "second" can explicitly or implicitly include at least one of the features. In addition, the technical solutions of various embodiments can be combined with each other, but it must be based on the realization of a person skilled in the art. When the combination of technical solutions appears to be contradictory or unachievable, it should be considered that the combination of technical solutions does not exist, nor is it within the protection scope required by the present application.

[0025] Please refer to Figures 1-3 , Figure 1 Fig. 1 is a perspective view of a height-increased infrared emitter, Figure 2 Fig. 2 is a sectional view of the height-increased infrared emitter, Figure 3 Fig. 3 is another perspective view of the height-increased infrared emitter. The present embodiment provides a height-increased infrared emitter, which includes a substrate 1, a pin 2, a riser 3, a wafer 4, a pad 5, and a light-transmitting ball 6. One side of the substrate 1 is provided with a circuit layer 10, the other side of the substrate 1 is provided with the pin 2, and the circuit layer 10 is electrically connected with the pin 2. In use, the pin 2 is used to be electrically connected with an external circuit board. In an actual use scenario, the pin 2 is welded on the external circuit board to realize the electrical connection between the infrared emitter and the external circuit board.

[0026] One end of the riser 3 is connected with the circuit layer 10, and the wafer 4 is arranged at the other end of the riser 3. The wafer 4 is electrically connected with the circuit layer 10 through the riser 3, so that the circuit layer 10 supplies power to the wafer 4 through the riser 3, thereby making the wafer 4 work.

[0027] The height H1 of the pad 5 is in the range of 1.3mm≤H1≤1.4mm. Since the conventional pad has an infrared emitter with a height of only 0.55mm, the infrared emitter needs to be raised again in a specific installation scenario. In the embodiment, the height of the infrared emitter is increased by increasing the height of the pad 5, so as to meet the installation requirements of the infrared emitter in a special scenario, so that the infrared emitter does not need to be raised again, and the manufacturing process of the raised infrared emitter is effectively simplified. The light-transmitting ball head 6 is arranged on the upper surface of the pad 5 and corresponds to the wafer 4. The light-transmitting ball head 6 is used to increase the light transmittance of the wafer 4. In use, the infrared light emitted by the wafer 4 is refracted by the light-transmitting ball head 6 and then emitted, effectively increasing the emission distance of the raised infrared emitter.

[0028] In this example, the pad 5 is formed by injection molding of a colloid on the upper surface of the substrate 1. In the manufacturing process of the raised infrared emitter, one end of the raised column 3 is connected to the circuit layer 10, and then the wafer 4 is connected to the other end of the raised column 3. Then, the substrate 1, the raised column 3 and the wafer 4 are placed in a mold, and a colloid is injected into the mold. After the colloid is solidified, the pad 5 is formed, and the installation groove is naturally formed between the pad 5, the circuit layer 10, the raised column 3 and the wafer 4. In this way, the pad 5 is formed by injection molding of the colloid, effectively reducing the processing steps of the infrared emitter.

[0029] Further, the material of the colloid is silica gel. The silica gel has good high-temperature resistance, which avoids the influence of the heat generated by the circuit layer 10 and the wafer on the pad 5 during the use of the infrared emitter, and effectively increases the high-temperature resistance of the infrared emitter, so that the infrared emitter can be applied to a high-temperature application environment, thereby expanding the use scenarios of the infrared emitter.

[0030] After injection molding, the pad 5 covers the circuit layer 10, the raised column 3 and the wafer 4, so that the circuit layer 10, the raised column 3 and the wafer 4 are encapsulated in the pad 5. The raised column 3 is arranged between the circuit layer 10 and the wafer 4 to increase the height of the wafer 4 and reduce the height difference between the wafer 4 and the light-transmitting ball head 6, so as to solve the problem that the light-emitting angle of the infrared emitter is reduced due to the high side wall of the pad 5 blocking the light emission of the wafer 4.

[0031] In this example, the two ends of the raised column 3 are adhered to the circuit layer 10 and the wafer 4 respectively by silver glue, and then the silver glue is solidified by heating and baking, so that the circuit layer 10 and the wafer 4 are conductively connected.

[0032] Thus, by increasing the height of the pad 5, the height of the infrared emitter is increased, so that the infrared emitter does not need to be padded twice, solving the problem that the infrared emitter needs to be padded twice in the traditional padding method, and simplifying the processing technology of the infrared emitter. At the same time, in order to improve the light output rate of the wafer 4, the height of the wafer 4 is increased by using the heightening column 3, so that the light output angle of the wafer 4 is increased, the emission range of the infrared emitter is expanded, and the light output efficiency of the infrared emitter is improved.

[0033] Further, the substrate 1 is a ceramic substrate. Since the ceramic substrate has good heat dissipation, the heat dissipation of the infrared emitter is improved.

[0034] Further, the light-transmitting ball head 6 is semispherical. The light-transmitting ball head 6 covers the wafer 4, and when used, the infrared light emitted by the wafer 4 passes through the light-transmitting ball head 6 and is emitted. The infrared light passes through the light-transmitting ball head 6, increasing the refraction angle of the infrared light, so that the irradiation range of the infrared light is wider. Since the light-transmitting ball head 6 is semispherical, the infrared light emitted by the heightening infrared emitter is more uniform.

[0035] Further, the light-transmitting ball head 6 is made of silica gel, so that the refractive index of the light-transmitting ball head 6 is 1.48, effectively improving the refractive index of the heightening infrared emitter and improving the high-temperature resistance of the heightening infrared emitter. Moreover, the light-transmitting ball head 6 is integrally formed with the pad 5. In the process of manufacturing the infrared emitter, the heightening column 3 is connected to the circuit layer 10 of the substrate 1, then the wafer 4 is connected to the heightening column 3, and then the pad 5 and the light-transmitting ball head 6 are integrally formed by injecting glue into the mold.

[0036] In addition, the heightening column 3 is made of gold-plated copper, so that the heightening column 3 has good electrical conductivity and also provides heat dissipation for the wafer 4. In the process of using the infrared emitter, the heat of the wafer 4 is conducted to the heightening column 3, so that the wafer 4 is cooled. Thus, by heightening the wafer 4 through the heightening column 3, the wafer 4 is cooled in time.

[0037] The height of the heightening column 3 is 0.8mm-1.2mm, so that by setting the heightening column 3, the height difference between the wafer 4 and the pad 5 is reduced. In this embodiment, the height of the pad 5 is 1.35mm, and the height of the heightening column 3 is 1.2mm.

[0038] In addition, one end of the heightening column 3 is located at the center of the wafer 4, and after the wafer 4 is connected to the heightening column 3, the wafer 4 is located on the central axis of the substrate 1, so as to ensure that the light emitted by the wafer 4 is uniformly distributed in all directions.

[0039] In summary, by setting the substrate 1, the wafer 4, the raised column 3, the raised platform 5 and the transparent ball head 6, the overall thickness of the raised infrared emitter is increased by setting the raised platform 5, so as to meet the raised requirement of the infrared emitter.

[0040] The above merely describes the embodiments of the present application and is not intended to limit the present application. The present application can be variously changed and modified by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the scope of the claims of the present application.

Claims

1. A height-increasing infrared emitter, characterized by The application relates to a substrate (1), a pin (2), a height increasing column (3), a wafer (4), a height increasing platform (5) and a light-transmitting ball head (6); the upper surface of the substrate (1) is provided with a circuit layer (10), the pin (2) is arranged on the side of the substrate (1) away from the circuit layer (10), and the circuit layer (10) is electrically connected with the pin (2); one end of the height increasing column (3) is connected with the circuit layer (10), and the wafer (4) is arranged on the other end of the height increasing column (3); the height increasing platform (5) is connected to the upper surface of the substrate (1); the height increasing platform (5) is internally provided with a mounting groove, the circuit layer (10), the height increasing column (3) and the wafer (4) are located in the mounting groove, the height H1 of the height increasing platform (5) ranges from 1.3 mm to 1.4 mm, the light-transmitting ball head (6) is arranged on the height increasing platform (5), and the light-transmitting ball head (6) corresponds to the wafer (4). The height increasing platform (5) is formed by glue injection molding.

2. The height-increasing infrared emitter according to claim 1, characterized in that The light-transmitting ball head (6) is semispherical.

3. The raised infrared emitter of claim 1, wherein, The height increasing column (3) is made of gold-plated copper material.

4. The raised infrared emitter of claim 1, wherein, The height H2 of the height increasing column (3) ranges from 0.8 mm to 1.2 mm.

5. The raised infrared emitter of claim 1, wherein, The light-transmitting ball head (6) is made of silica gel material, and the refractive index is 1.

48.

6. The raised infrared emitter of claim 1, wherein, The wafer (4) is located on the central axis of the substrate (1).

7. The raised infrared emitter of claim 1, wherein, The height increasing platform (5) and the light-transmitting ball head (6) are integrally formed.

8. The raised infrared emitter of claim 1, wherein, The substrate (1) is a ceramic substrate.

9. The raised infrared emitter of claim 1, wherein, ​

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