Process chamber for back deposition and back deposition equipment for semiconductor device

Abstract

The utility model provides a process chamber for back deposition and back deposition equipment for a semiconductor device. The process chamber for back surface deposition comprises a heating plate which is located at the upper part of the process chamber and is used for heating the front surface of a wafer, and a plurality of air passing through holes are formed in the heating plate; the spraying plate is positioned at the lower part of the process chamber and is used for providing process gas for the back surface of the wafer so as to be matched with the heating plate to perform back surface film deposition on the wafer; and the first gas inlet is located in the heating plate and used for providing cleaning gas to the position above the heating plate, and the cleaning gas uniformly flows to a central area between the heating plate and the spraying plate through the gas passing through holes in the heating plate so as to clean the central area.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor manufacturing, especially to a back deposition process chamber and a back deposition equipment of semiconductor device. BACKGROUND

[0002] In the semiconductor manufacturing process, according to the semiconductor process requirements and the application of device, a thin film needs to be deposited on the back of the wafer through the back deposition equipment. This process needs to be highly accurate and clean to maintain the stability of the semiconductor manufacturing process and the quality of the product. The traditional back deposition equipment usually uses dry cleaning, and the cleaning gas only has one inflow channel, and the edge inflow or the middle inflow is used to clean the back deposition equipment. Therefore, this method inevitably has the problem of uneven cleaning speed in the edge area and the middle area of the flow channel, and the fluorination degree of different positions in the chamber is greatly different, which finally leads to process drift and produces film particles, which has an adverse effect on the yield of the product.

[0003] The prior art discloses a technical solution as shown in CN 115810564 A, which is a semiconductor processing chamber for front deposition and a cleaning method thereof. In the technical solution, the shower head with the air function is arranged above the heating disc, and the air outlet is arranged below the process chamber. However, if this device is configured in the back deposition equipment, the shower head is arranged below the heating disc, which causes the problem that the upper area cannot be cleaned when the air is extracted through the air outlet below the process chamber.

[0004] In order to overcome the above-mentioned defects existing in the prior art, the technical field urgently needs a cleaning technology for providing uniform cleaning gas to the process chamber to improve the yield of the product. UTILITY MODEL CONTENT

[0005] The following gives a brief summary of one or more aspects to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all contemplated aspects, and neither is it intended to identify key or critical elements of all aspects nor to delineate the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form before the more detailed description is given later.

[0006] In order to overcome the above-mentioned defects existing in the prior art, the utility model provides a back deposition process chamber and a back deposition equipment of semiconductor device for providing uniform cleaning gas to the process chamber to improve the yield of the product.

[0007] Specifically, the process chamber for backside deposition provided by the first aspect of the present application comprises: a heating plate located at the upper part of the process chamber and used for heating the front surface of a wafer, wherein a plurality of air passing through holes are arranged on the heating plate; a spraying plate located at the lower part of the process chamber and used for providing process gas to the back surface of the wafer to cooperate with the heating plate to perform backside film deposition on the wafer; and a first gas inlet located above the heating plate and used for providing cleaning gas above the heating plate, wherein the cleaning gas flows uniformly to the central region between the heating plate and the spraying plate through the plurality of air passing through holes on the heating plate to clean the central region.

[0008] Further, in some embodiments of the present application, the process chamber further comprises: a uniform gas sleeve surrounding the upper part of the heating plate and maintaining a uniform gas annulus between the heating plate, wherein the first gas inlet communicates with the uniform gas annulus to provide the cleaning gas above the heating plate.

[0009] Further, in some embodiments of the present application, the air passage diameter of the uniform gas annulus decreases with the distance to the first gas inlet, and / or the air passing through diameter of the air passing through hole increases with the distance to the first gas inlet.

[0010] Further, in some embodiments of the present application, the process chamber further comprises: a second gas inlet located above the uniform gas sleeve and communicating with the outer region of the uniform gas annulus to provide the cleaning gas above the uniform gas sleeve.

[0011] Further, in some embodiments of the present application, the process chamber further comprises: a wafer support mechanism located between the heating plate and the spraying plate and used for supporting the wafer and exposing the back surface thereof to perform the backside film deposition thereon, wherein the cleaning gas flows uniformly to the first intermediate region between the heating plate and the wafer support mechanism through the plurality of air passing through holes on the heating plate, and the cleaning gas also flows to the second intermediate region between the wafer support mechanism and the spraying plate through the outer region of the uniform gas annulus to uniformly clean the first intermediate region and the second intermediate region.

[0012] Further, in some embodiments of the present application, the process chamber further comprises: a cleaning gas source connected to the first gas inlet and / or the second gas inlet to provide the cleaning gas thereto.

[0013] Further, in some embodiments of the present application, the process chamber further comprises a remote plasma system located between the cleaning gas source and the first gas inlet and / or the second gas inlet, for exciting the cleaning gas provided by the cleaning gas source, and transmitting the plasma generated by the excitation to the first gas inlet and / or the second gas inlet, so as to clean the process chamber.

[0014] Further, in some embodiments of the present application, the process chamber further comprises at least one exhaust port located below the shower plate, for extracting the exhaust gas in the process chamber.

[0015] Further, in some embodiments of the present application, the process chamber comprises a plurality of the exhaust ports, wherein each of the exhaust ports is arranged symmetrically around the longitudinal center axis of the process chamber, so as to uniformly extract the exhaust gas in the process chamber.

[0016] Further, in some embodiments of the present application, the process chamber, the shower plate is further provided with a heating element, for heating the back surface of the wafer and / or heating the process gas, so as to promote the deposition of the film on the back surface of the wafer.

[0017] In addition, the back surface deposition equipment of the semiconductor device according to the second aspect of the present application comprises at least one process chamber according to any one of the first aspect of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0018] The above features and advantages of the present application can be better understood by reading the detailed description of embodiments of the present application in conjunction with the following drawings, in which the components are not necessarily drawn to scale and components of similar or identical function or structure can be designated with the same or similar reference numerals.

[0019] Figure 1 A structural schematic diagram of a back surface deposition process chamber according to some embodiments of the present application is shown.

[0020] Figure 2 A remote plasma structural schematic diagram of a plurality of process chambers according to some embodiments of the present application is shown.

[0021] REFERENCE NUMERALS:

[0022] 10 heating plate

[0023] 20 shower plate

[0024] 30 gas distribution liner

[0025] 41 first gas inlet

[0026] 42 second gas inlet

[0027] 50 wafer support mechanism

[0028] 60 remote plasma system

[0029] 70 gas exhaust port DETAILED DESCRIPTION

[0030] The specific embodiments will be described in the following detailed description with reference to the drawings, but those skilled in the art can easily understand other advantages and purposes of the present application from the disclosure of the present application. Although the description of the present application will be introduced in combination with the preferred embodiments, it does not mean that the features of the present application are limited to the embodiments. On the contrary, the purpose of introducing the present application in combination with the embodiments is to cover other choices or modifications which can be extended based on the claims of the present application. In order to provide a deep understanding of the present application, many specific details will be included in the following description. The present application can also be implemented without using these details. In addition, in order to avoid confusion or obscure the focus of the present application, some specific details will be omitted in the description.

[0031] In the description of the present application, it should be noted that, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connecting" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through intermediate medium, or the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0032] In addition, "up", "down", "left", "right", "top", "bottom", "horizontal", "vertical" used in the following description should be understood as the orientation shown in the paragraph and the related drawings. The relative terms are only used for convenience of description, and they do not mean that the devices described should be manufactured or operated in a particular orientation, so they should not be understood as a limitation of the present application.

[0033] It can be understood that although the terms "first", "second", "third" and the like can be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below can be called the second component, region, layer and / or part without departing from some embodiments of the present application.

[0034] As mentioned above, in the semiconductor manufacturing process, according to the requirements of the semiconductor process and the application of the device, it is necessary to deposit a thin film on the back of the wafer through the back deposition equipment. This process needs to be highly precise and clean to maintain the stability of the semiconductor manufacturing process and the quality of the product. The traditional back deposition equipment usually uses dry cleaning, and the cleaning gas has only one inflow channel, and the back deposition equipment is cleaned by edge inflow or middle inflow. Therefore, this method inevitably has the problem of uneven cleaning speed in the edge area and the middle area of the flow channel, and the degree of fluorination in different positions of the chamber is greatly different, which finally leads to process drift and generates film particles, which adversely affects the yield of the product.

[0035] In order to overcome the above-mentioned defects existing in the prior art, the utility model provides a back deposition process chamber and a back deposition equipment for semiconductor devices for providing uniform cleaning gas to the process chamber to improve the yield of the product.

[0036] In some non-limiting embodiments, the back deposition process chamber provided by the first aspect of the utility model can be implemented based on the back deposition equipment for semiconductor devices provided by the second aspect of the utility model.

[0037] Specifically, the back deposition process mainly refers to depositing one or more layers of material on the back of the semiconductor wafer, thereby reducing light transmission, heat dissipation or electrical isolation, etc., to improve device performance. Specifically, for some semiconductor devices, such as image sensors, reducing backside light transmission can reduce noise and improve image quality. The specific material of the back deposition can act as a heat dissipation layer to help more effectively conduct the heat generated by the chip. In some designs, the back deposition layer can act as an electrical isolation layer to prevent interference between the back and front circuits.

[0038] Further, the back deposition process can also improve processing flexibility and reduce front process steps, and improve production efficiency. Specifically, the back deposition process can provide more flexibility for front processing, as it is not limited by the layout of the front circuit, which allows more complex or different material deposition on the back without affecting the circuit design on the front. In addition, this method can deposit on the back after the wafer has completed the front process, thereby realizing parallel processing of front and back processes and improving production efficiency. And by depositing on the back, the complexity and steps of the front process can be reduced, simplifying the production process and reducing costs.

[0039] First refer to Figure 1 , Figure 1 The structure of the back deposition process chamber according to some embodiments of the utility model is shown.

[0040] As Figure 1As shown, the backside deposition process chamber includes a heating plate 10, a shower plate 20, a first gas inlet 41, a uniform gas sleeve 30, a second gas inlet 42, and an exhaust port 70.

[0041] The heating plate 10 is located at the upper portion of the process chamber, and is configured to heat the front side of the wafer. The heating plate 10 is provided with a plurality of gas passing holes.

[0042] The shower plate 20 is located at the lower portion of the process chamber, and is configured to provide process gas to the back side of the wafer, so as to cooperate with the heating plate 10 to perform backside film deposition on the wafer. In some embodiments, the shower plate 20 is further provided with a heating element, which is configured to heat the back side of the wafer and / or heat the process gas, so as to facilitate the backside film deposition on the wafer.

[0043] The first gas inlet 41 is located above the heating plate 10, and is configured to provide cleaning gas to the upper portion of the heating plate 10. In this embodiment, the cleaning gas is mainly fluorine-containing gas, such as a mixture of nitrogen trifluoride and argon. The cleaning gas flows uniformly to the central region between the heating plate 10 and the shower plate 20 through the gas passing holes of the heating plate 10, so as to clean the central region.

[0044] The uniform gas sleeve 30 surrounds the upper portion of the heating plate 10, and maintains a uniform gas annulus between the heating plate 10 and the uniform gas sleeve 30. In this embodiment, the first gas inlet 41 is connected to the uniform gas annulus, so as to provide cleaning gas to the upper portion of the heating plate 10. The second gas inlet 42 is located above the uniform gas sleeve 30, and is connected to the outer region of the uniform gas annulus, so as to provide cleaning gas to the upper portion of the uniform gas sleeve 30, thereby cleaning the upper region of the heating plate 10.

[0045] In some embodiments, a cleaning gas source is connected to the first gas inlet 41 and / or the second gas inlet 42, so as to provide cleaning gas thereto. In this embodiment, the flow rates of the cleaning gas of the first gas inlet 41 and the second gas inlet 42 can be independently adjusted, so as to improve the cleaning uniformity.

[0046] In some embodiments, the air passage diameter of the uniform gas annulus decreases with the distance from the first gas inlet 41, so as to improve the uniformity of the air pressure of the cleaning gas at different positions, thereby improving the uniformity of the gas passing.

[0047] In some embodiments, the gas passing diameter of the gas passing holes increases with the distance from the first gas inlet 41, so as to improve the uniformity of the flow resistance of the cleaning gas at different positions, thereby improving the uniformity of the gas passing.

[0048] The at least one gas suction port 70 is located below the shower plate 20 to suck the exhaust gas in the process chamber. In this embodiment, the exhaust gas in the process chamber includes but is not limited to the excess process gas, the process tail gas, and the cleaning tail gas, which is more likely to flow into the front surface area of the wafer to cause unnecessary long film on the front surface of the wafer. Therefore, the gas suction port can be matched with the shower plate 20 located at the lower part of the process chamber to timely suck the excess process gas and the process tail gas to avoid long film on the front surface of the wafer.

[0049] Further, the gas suction port 70 can be matched with the cleaning method of inputting the cleaning gas from the upper part of the process chamber through the heating plate 10 to make the cleaning gas flow through the entire process chamber to improve the cleaning effect and the cleaning uniformity.

[0050] In some embodiments, the process chamber can include a plurality of gas suction ports 70. Further, each gas suction port 70 is arranged symmetrically around the longitudinal center axis of the process chamber to uniformly suck the exhaust gas in the process chamber.

[0051] In addition, the process chamber can further include a wafer support mechanism 50 (for example, an edge ring). The wafer support mechanism 50 is located between the heating plate 10 and the shower plate 20 to support the wafer and expose the back surface thereof for back surface thin film deposition, wherein the cleaning gas flows uniformly to the first intermediate area (i.e., the secondary reaction area of the front surface of the wafer) between the heating plate 10 and the wafer support mechanism 50 through the plurality of gas passing through holes on the heating plate 10, and the cleaning gas also flows to the second intermediate area (i.e., the primary reaction area of the back surface of the wafer) between the wafer support mechanism 50 and the shower plate 20 through the outer area of the uniform gas ring channel to uniformly clean the first intermediate area and the second intermediate area.

[0052] Please refer to Figure 2 , Figure 2 Fig. 1 shows a schematic diagram of a remote plasma structure of a plurality of process chambers according to some embodiments of the present application.

[0053] As Figure 2 shown, the back surface deposition equipment of the semiconductor device includes at least one process chamber, which includes but is not limited to 1, 2, and 4.

[0054] In addition, the process chamber can further include a remote plasma system 60. The remote plasma system 60 is located between the cleaning gas source and the first gas inlet 41 and / or the second gas inlet 42 to excite the cleaning gas provided by the cleaning gas source and transmit the excited generated plasma to the first gas inlet 41 and / or the second gas inlet 42 to clean the process chamber to further improve the cleaning effect.

[0055] The working principle of the above-mentioned back surface deposition process chamber and the back surface deposition equipment of the semiconductor device will be described below in combination with some embodiments of the back surface deposition process chamber cleaning method.

[0056] First, the backside deposition process chamber opens a cleaning gas source to output a cleaning gas. At this time, the cleaning gas source can also transmit a generated plasma to the process chamber via a remote plasma system excitation.

[0057] Afterwards, the cleaning gas flows uniformly to the sub-reaction area of the wafer front surface between the heating plate 10 and the wafer support mechanism 50 via the plurality of gas passing holes on the heating plate 10, so as to uniformly clean the area. The cleaning gas also flows to the main reaction area of the wafer back surface between the wafer support mechanism 50 and the shower plate 20 via the outer area of the gas uniform ring, so as to uniformly clean the area.

[0058] Those skilled in the art can understand that the embodiments of the backside deposition process chamber cleaning method are only some non-limiting embodiments provided by the present application, which aims to clearly show the main concept of the present application and provide some specific schemes for the public to implement, but not to limit the whole function or the whole working mode of the backside deposition process chamber and the backside deposition equipment of the semiconductor device. Similarly, the backside deposition process chamber and the backside deposition equipment of the semiconductor device are also only some non-limiting embodiments provided by the present application, which does not limit the execution subject or the execution order of each step in the backside deposition process chamber cleaning method.

[0059] In summary, the cleaning technology provided by the present application can be used to provide uniform cleaning gas to the process chamber to improve the yield of the product.

[0060] Although the above-described methods are illustrated and described as a series of acts for simplicity, it is understood and appreciated that the methods are not limited by the order of acts, as some acts may, in accordance with one or more embodiments, occur in different orders and / or concurrently with other acts from that set of acts and other acts not depicted and described herein but which are understood by those skilled in the art.

[0061] Those skilled in the art will further appreciate that the various illustrative logical blocks, modules, circuits, and algorithm steps described in connection with the embodiments disclosed herein can be implemented as electronic hardware, computer software, or combinations of both. To clearly illustrate this interchangeability of hardware and software, various illustrative components, blocks, modules, circuits, and steps have been described above generally in terms of their functionality. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the overall system. Skilled artisans can implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.

[0062] Although the controller of the above-described embodiments can be implemented by a combination of software and hardware, it is understood that the controller can be implemented in software, hardware, or a combination thereof. For a hardware implementation, the controller can be implemented by one or more application specific integrated circuits (ASICs), digital signal processors (DSPs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), processors, controllers, micro-controllers, microprocessors, other electronic units designed to perform the functions described herein, or a combination thereof. For a software implementation, the controller can be implemented by separate software modules, such as procedures and functions, which perform one or more of the functions described herein.

[0063] The various illustrative logical blocks, circuits, and modules described in connection with the embodiments disclosed herein can be implemented or performed with a general purpose processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or any combination thereof designed to perform the functions described herein. A general purpose processor can be a microprocessor, but in the alternative, the processor can be any conventional processor, controller, microcontroller, or state machine. A processor can also be implemented as a combination of computing devices, such as a combination of a DSP and a microprocessor, a plurality of microprocessors, one or more microprocessors in conjunction with a DSP core, or any other such configuration.

[0064] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A process chamber for backside deposition, characterized in that, The process chamber comprises: a heating plate located at an upper portion of the process chamber for heating a front surface of a wafer, wherein the heating plate is provided with a plurality of gas passing holes; a shower plate located at a lower portion of the process chamber for providing a process gas to a back surface of the wafer to cooperate with the heating plate to perform backside film deposition on the wafer; and a first gas inlet located above the heating plate for providing a cleaning gas above the heating plate, wherein the cleaning gas flows uniformly to a central region between the heating plate and the shower plate through the plurality of gas passing holes on the heating plate to clean the central region.

2. The process chamber of claim 1, wherein, Further comprising: a gas uniformizing sleeve surrounding an upper portion of the heating plate and maintaining a gas uniformizing annulus between the heating plate and the gas uniformizing sleeve, wherein the first gas inlet communicates with the gas uniformizing annulus to provide the cleaning gas above the heating plate.

3. The process chamber of claim 2, wherein, a gas passing diameter of the gas uniformizing annulus decreases with a distance from the first gas inlet, and / or a gas passing diameter of the gas passing holes increases with a distance from the first gas inlet.

4. The process chamber of claim 2, wherein, Further comprising: a second gas inlet located above the gas uniformizing sleeve and communicating with an outer region of the gas uniformizing annulus to provide the cleaning gas above the gas uniformizing sleeve.

5. The process chamber of claim 4, wherein, Further comprising: a wafer supporting mechanism located between the heating plate and the shower plate for supporting the wafer and exposing the back surface thereof to perform the backside film deposition thereon, wherein the cleaning gas flows uniformly to a first intermediate region between the heating plate and the wafer supporting mechanism through the plurality of gas passing holes on the heating plate, and the cleaning gas also flows to a second intermediate region between the wafer supporting mechanism and the shower plate through the outer region of the gas uniformizing annulus to uniformly clean the first and second intermediate regions.

6. The process chamber of claim 4, wherein, Further comprising: a cleaning gas source connected to the first gas inlet and / or the second gas inlet to provide the cleaning gas thereto.

7. The process chamber of claim 6, wherein, Further comprising: a remote plasma system located between the cleaning gas source and the first gas inlet and / or the second gas inlet for exciting the cleaning gas provided by the cleaning gas source and transmitting the plasma generated by the excitation to the first gas inlet and / or the second gas inlet to clean the process chamber.

8. The process chamber of claim 1, wherein, Further comprising: at least one gas exhaust located below the shower plate to exhaust waste gas in the process chamber.

9. The process chamber of claim 8, wherein, The process chamber comprises a plurality of the gas exhausts, wherein each of the gas exhausts is arranged symmetrically around a central axis of the process chamber in a longitudinal direction to uniformly exhaust the waste gas in the process chamber.

10. The process chamber of claim 1, wherein, The shower plate is further provided with a heating element for heating the back surface of the wafer and / or heating the process gas to facilitate the backside film deposition on the wafer.

11. A backside deposition apparatus of a semiconductor device, characterized by, The process chamber comprises at least one of the process chambers according to any one of claims 1-10.

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