Wafer electroplating device

Abstract

The utility model provides a wafer electroplating device which comprises a pre-wetting mechanism, an electroplating mechanism, a fixing part and a conveying mechanism, the pre-wetting mechanism is provided with a pre-wetting cavity, the pre-wetting cavity is provided with a first opening, the electroplating mechanism is arranged below the pre-wetting mechanism in the vertical direction, the electroplating mechanism is provided with an electroplating cavity, the electroplating cavity is provided with a second opening, and the first opening is communicated with the second opening. The fixing part is used for fixing a target wafer and is provided with a first position and a second position, the transmission mechanism is connected to the fixing part and is used for driving the fixing part to move between the first position and the second position, and the pre-wetting mechanism and the electroplating mechanism are oppositely arranged in the vertical direction, so that the movement stroke of the transmission mechanism is reduced, and the efficiency of the transmission mechanism is improved; and meanwhile, the pre-wetting mechanism and the electroplating mechanism are oppositely arranged in the vertical direction, so that the occupied area of the wafer electroplating device can be reduced.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductor manufacturing, and more particularly to a wafer electroplating device. BACKGROUND

[0002] In the field of semiconductor processing technology, a semiconductor electroplating process is to deposit a metal film layer on the surface of a wafer through an electroplating device to realize electrical interconnection between multiple devices on the wafer surface. The electroplating process is divided into vertical electroplating and horizontal electroplating. Among them, the horizontal electroplating equipment has gradually become the mainstream electroplating equipment due to its small required cavity volume, small electroplating liquid demand, and low manufacturing cost.

[0003] At present, in the existing horizontal electroplating equipment, the pre-wetting cavity and the electroplating cavity are arranged separately along the horizontal direction. The wafer is clamped by a transmission mechanism and completes the pre-wetting process in the pre-wetting cavity, and then is transported to the electroplating cavity by the transmission mechanism for electroplating.

[0004] The above technical scheme has the following problems: since the pre-wetting cavity and the electroplating cavity are arranged separately along the horizontal direction, after completing the pre-wetting process of the wafer, the transmission mechanism needs to clamp the wafer and move to the position of the electroplating cavity to perform the electroplating process, which causes the transmission mechanism to have a large stroke when working. Since the transmission mechanism needs to move back and forth between the pre-wetting cavity and the electroplating cavity, the working efficiency of the transmission mechanism is reduced to some extent. At the same time, since the pre-wetting cavity and the electroplating cavity are arranged separately along the horizontal direction, the floor area occupied by the electroplating device is also increased. CONTENT OF THE INVENTION

[0005] The purpose of the embodiment of the present application is to provide a wafer electroplating device to solve the technical problem that the efficiency of the transmission mechanism in the wafer electroplating device in the prior art needs to be improved.

[0006] To achieve the above-mentioned purpose, the technical scheme adopted by the present application is to provide a wafer electroplating device, comprising:

[0007] A pre-wetting mechanism is provided with a pre-wetting cavity, and the pre-wetting cavity has a first opening;

[0008] An electroplating mechanism is arranged below the pre-wetting mechanism along the vertical direction, and the electroplating mechanism is provided with an electroplating cavity, and the electroplating cavity has a second opening;

[0009] A fixing member is used to fix a target wafer, and the fixing member has a first position and a second position;

[0010] A transmission mechanism is connected to the fixing member and is used to drive the fixing member to move between the first position and the second position;

[0011] When the fixing member is located at the first position, the fixing member transports the target wafer into the pre-wetting cavity to pre-wet the target wafer, and the fixing member closes the first opening; when the fixing member is located at the second position, the fixing member transports the target wafer into the electroplating cavity to electroplate the target wafer.

[0012] Optionally, the first opening and the second opening are coaxially arranged.

[0013] Optionally, the pre-wetting mechanism comprises:

[0014] a pre-wetting shell provided with the pre-wetting cavity;

[0015] a spraying port mounted in the pre-wetting cavity and used for spraying a chemical reagent on the target wafer to pre-wet the target wafer.

[0016] Optionally, the pre-wetting shell is provided with a vacuum interface, and the vacuum interface is used for being connected with a vacuum generator.

[0017] When the fixing member is located at the first position, the vacuum generator is used for generating negative pressure in the pre-wetting cavity.

[0018] Optionally, the pre-wetting shell is provided with a collecting cavity at the bottom, the collecting cavity is communicated with the pre-wetting cavity, and the collecting cavity is used for collecting the chemical reagent.

[0019] Optionally, a bottom wall of the pre-wetting shell is arranged at an angle with the vertical direction, and the collecting cavity is formed by the bottom wall and a side wall of the pre-wetting shell.

[0020] Optionally, the first opening is located at the top end of the bottom wall.

[0021] Optionally, the transmission mechanism comprises:

[0022] a first driving member, the fixing member is connected with the first driving member, and the first driving member is used for driving the fixing member to rotate around the horizontal direction;

[0023] a second driving member connected with the first driving member and used for driving the first driving member to move along the vertical direction.

[0024] Optionally, the transmission mechanism further comprises:

[0025] a third driving member connected with the first driving member, the fixing member is connected with the third driving member, and the third driving member is used for driving the fixing member to rotate around the vertical direction.

[0026] Optionally, the electroplating mechanism comprises:

[0027] an electroplating shell provided with the electroplating cavity;

[0028] an ion exchange membrane installed in the electroplating cavity and separating the electroplating cavity into a cathode cavity and an anode cavity, the cathode cavity being located above the anode cavity;

[0029] an electroplating anode installed in the anode cavity.

[0030] Optionally, a shielding portion is arranged on the top wall of the electroplating shell, the second opening is located at the top end of the shielding portion, and the shielding portion is arranged at an angle with the vertical direction.

[0031] The wafer electroplating device provided by the application has the advantages that: compared with the prior art, the wafer electroplating device provided by the application comprises a pre-wetting mechanism, an electroplating mechanism, a fixing member and a transmission mechanism, wherein the pre-wetting mechanism is provided with a pre-wetting cavity, the pre-wetting cavity has a first opening, the electroplating mechanism is arranged below the pre-wetting mechanism in the vertical direction, the electroplating mechanism is provided with an electroplating cavity, the electroplating cavity has a second opening, the fixing member is used for fixing a target wafer, the fixing member has a first position and a second position, and the transmission mechanism is connected to the fixing member and used for driving the fixing member to move between the first position and the second position. By arranging the pre-wetting mechanism and the electroplating mechanism opposite to each other in the vertical direction, the movement stroke of the transmission mechanism is reduced, the efficiency of the transmission mechanism is improved, and the floor area of the wafer electroplating device is also reduced. BRIEF DESCRIPTION OF DRAWINGS

[0032] In order to more clearly illustrate the technical solutions in the embodiments of the application, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description only some embodiments of the application, and for those skilled in the art, other drawings can also be obtained without creative labor.

[0033] Figure 1 The structure schematic diagram of the wafer electroplating device provided by the embodiments of the application;

[0034] Figure 2 The structure schematic diagram of the fixing member in the first position in the embodiments of the application;

[0035] Figure 3 The structure schematic diagram of the fixing member in the second position in the embodiments of the application;

[0036] Figure 4 The structure schematic diagram of the fixing member in the second position in another embodiment of the application;

[0037] Figure 5Fig. 3 is a structural schematic view of the fixed part in a tilted state in the embodiment of the present application.

[0038] In the drawings, reference numerals:

[0039] 10, pre-wetting mechanism; 11, pre-wetting shell; 111, pre-wetting cavity; 112, first opening; 113, bottom wall; 114, vacuum interface; 115, collection cavity; 12, spraying opening; 20, electroplating mechanism; 21, electroplating shell; 211, electroplating cavity; 211a, cathode cavity; 211b, anode cavity; 212, second opening; 231, shielding part; 22, ion exchange membrane; 23, electroplating anode; 30, fixed part; 40, conveying mechanism; 41, first driving part; 411, rotary air cylinder; 412, rotary arm; 413, servo motor; 42, second driving part; 421, guide rail; 422, sliding seat; 43, third driving part; 50, target wafer; 51, surface to be electroplated. DETAILED DESCRIPTION

[0040] In order to make the technical problems, technical solutions and beneficial effects of the present application clearer, the present application will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only intended to explain the present application, and not to limit the present application.

[0041] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0042] It should be understood that the terms "length", "width", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0043] In addition, the terms "first", "second", "third", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second", etc. can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "plurality" is two or more, unless otherwise specifically limited.

[0044] Please refer to Figures 1 to 5The wafer electroplating device provided by the embodiment of the present application will be described.

[0045] The wafer electroplating device comprises a pre-wetting mechanism 10, an electroplating mechanism 20, a fixing member 30 and a transmission mechanism 40.

[0046] Please refer to Figure 1 The pre-wetting mechanism 10 is provided with a pre-wetting cavity 111 having a first opening 112. The pre-wetting cavity 111 is used to spray chemical reagents on the surface of the target wafer 50 to be electroplated, so as to pre-wet the surface of the target wafer 50 to be electroplated, thereby facilitating the subsequent electroplating process of the surface of the target wafer 50 to be electroplated.

[0047] The electroplating mechanism 20 is arranged below the pre-wetting mechanism 10 along the vertical direction. The electroplating mechanism 20 is provided with an electroplating cavity 211 having a second opening 212. After the surface of the target wafer 50 to be electroplated is pre-wetted, the target wafer 50 is immersed in the electroplating cavity 211, so that the electroplating solution in the electroplating cavity 211 electroplates the surface of the target wafer 50 to be electroplated.

[0048] Please refer to Figure 2 and Figure 3 The fixing member 30 is used to fix the target wafer 50. The fixing member 30 has a first position and a second position. When the fixing member 30 is in the first position, the fixing member 30 transports the target wafer 50 into the pre-wetting cavity 111, and the surface of the target wafer 50 to be electroplated is arranged upward along the vertical direction, so as to facilitate the pre-wetting of the surface of the target wafer 50 to be electroplated by the pre-wetting mechanism 10. When the fixing member 30 is in the first position, the fixing member 30 blocks the first opening 112 to close the pre-wetting cavity 111.

[0049] When the fixing member 30 is in the second position, the surface of the target wafer 50 to be electroplated fixed on the fixing member 30 is arranged downward along the vertical direction, and the fixing member 30 immerses the target wafer 50 into the electroplating solution in the electroplating cavity 211, thereby realizing the electroplating of the surface of the target wafer 50 to be electroplated.

[0050] The fixing member 30 is connected to the transmission mechanism 40. The transmission mechanism 40 is used to drive the fixing member 30 to move between the first position and the second position, i.e. the transmission mechanism 40 is only used to make the fixing member 30 move linearly along the vertical direction between the pre-wetting mechanism 10 and the electroplating mechanism 20, so as to transport the target wafer 50 from the pre-wetting mechanism 10 to the electroplating mechanism 20, thereby shortening the stroke of the transmission mechanism 40 and reducing the structural complexity of the transmission mechanism 40. When the fixing member 30 is in the first position and the second position, the transmission mechanism 40 is also used to drive the fixing member 30 to rotate.

[0051] Compared with the prior art, the wafer electroplating device provided by the application comprises a pre-wetting mechanism 10, an electroplating mechanism 20, a fixing member 30 and a transmission mechanism 40, wherein the pre-wetting mechanism 10 is provided with a pre-wetting cavity 111, the pre-wetting cavity 111 has a first opening 112, the electroplating mechanism 20 is arranged below the pre-wetting mechanism 10 in the vertical direction, the electroplating mechanism 20 is provided with an electroplating cavity 211, the electroplating cavity 211 has a second opening 212, the fixing member 30 is used for fixing a target wafer 50, the fixing member 30 has a first position and a second position, and the transmission mechanism 40 is connected to the fixing member 30 and used for driving the fixing member 30 to move between the first position and the second position. By arranging the pre-wetting mechanism 10 and the electroplating mechanism 20 opposite to each other in the vertical direction, the movement stroke of the transmission mechanism 40 is reduced, and the efficiency of the transmission mechanism 40 is improved. Meanwhile, by arranging the pre-wetting mechanism 10 and the electroplating mechanism 20 opposite to each other in the vertical direction, the floor area of the wafer electroplating device is also reduced.

[0052] In an embodiment of the application, the fixing member 30 is a wafer clamp, and the wafer clamp comprises a clamping base and a clamping member arranged on the clamping base. The clamping member is used for clamping the target wafer 50 to fix the target wafer 50 on the clamping base. The clamping base is a circular plate structure, and the diameter of the clamping base is greater than the diameter of the target wafer 50. The target wafer 50 is coaxially arranged with the clamping base.

[0053] The diameter of the clamping base is greater than or equal to the diameter of the first opening 112. When the diameter of the clamping base is greater than the diameter of the first opening 112, the part of the clamping base located on the outer side of the target wafer 50 abuts against the first opening 112 to shield the first opening 112.

[0054] Please refer to Figure 2 When the diameter of the clamping base is equal to the diameter of the first opening 112, the side wall of the clamping base abuts against the inner wall of the first opening 112 to shield the first opening 112.

[0055] In the application, please refer to Figures 1 to 3 The first opening 112 and the second opening 212 are coaxially arranged.

[0056] By coaxially arranging the first opening 112 and the second opening 212, when the transmission mechanism 40 drives the fixing member 30 to move from the first position to the second position, the transmission mechanism 40 only needs to move up and down in the vertical direction and perform a flip movement around the horizontal direction, without needing to perform a horizontal displacement in the horizontal direction, so as to further reduce the movement stroke of the transmission mechanism 40, and meanwhile, the transmission mechanism 40 does not need to be provided with a horizontal displacement mechanism, and the structure of the transmission mechanism 40 is also simplified.

[0057] In the application, the pre-wetting mechanism 10 comprises a pre-wetting shell 11 and a spray opening 12.

[0058] Please refer to Figure 1 and Figure 2 The pre-wetting cavity 111 is arranged in the pre-wetting shell 11, the spray nozzle 12 is arranged in the pre-wetting cavity 111 and located at the top of the pre-wetting cavity 111, the spray nozzle 12 is connected with the chemical liquid injection device through a pipeline, and the spray nozzle 12 is used for spraying the chemical reagent on the surface 51 to be plated of the target wafer 50 to pre-wet the target wafer 50 after the chemical liquid injection device is turned on.

[0059] In an embodiment of the present application, please refer to Figure 1 and Figure 2 The pre-wetting shell 11 is provided with a vacuum interface 114, and the vacuum interface 114 is used for being connected with a vacuum generator.

[0060] When the fixing member 30 is located at the first position, the vacuum generator is turned on, the vacuum generator is used for generating negative pressure in the pre-wetting cavity 111 and making the vacuum degree in the pre-wetting cavity 111 reach a preset value, so that the pressure in the pre-wetting cavity 111 is lower than the air pressure outside the pre-wetting cavity 111.

[0061] The pre-wetting cavity 111 is provided with a pressure sensor, the pressure sensor is electrically connected with a pressure controller, the vacuum generator is electrically connected with the pressure sensor, and the pressure sensor transmits the detected pressure value in the pre-wetting cavity 111 to the pressure controller. When the fixing member 30 is located at the first position, the vacuum generator is turned on, and when the pressure in the pre-wetting cavity 111 reaches the preset pressure value in the pressure controller, the pressure controller generates a power-off signal and transmits the power-off signal to the vacuum generator, and the vacuum generator stops working according to the power-off signal after receiving the power-off signal.

[0062] In an embodiment of the present application, please refer to Figure 1 and Figure 2 The bottom of the pre-wetting shell 11 is provided with a collection cavity 115, the collection cavity 115 is communicated with the pre-wetting cavity 111, and the collection cavity 115 is used for collecting the chemical reagent.

[0063] By arranging the collection cavity 115 at the bottom of the pre-wetting shell 11, when the fixing member 30 is located at the first position, the excess chemical reagent on the surface 51 to be plated of the target wafer 50 enters the collection cavity 115 and is collected by the collection cavity 115. The bottom of the collection cavity 115 is communicated with a chemical reagent storage device, and the collected chemical reagent in the collection cavity 115 reenters the chemical reagent storage device, so as to facilitate recycling of the chemical reagent.

[0064] In an embodiment of the present application, the bottom wall 113 of the shell is arranged at an angle with the vertical direction, the collection cavity 115 is formed by the bottom wall 113 and a side wall, and the first opening 112 is located at the top end of the bottom wall 113.

[0065] As the bottom wall 113 of the shell is arranged at an angle with the vertical direction, the side wall of the fixing member 30 abuts against the top end of the shell when the fixing member 30 is in the first position, so as to seal the pre-wetting cavity 111. As the collecting cavity 115 is formed by the bottom wall 113 of the shell and the inner side of the side wall of the shell, the excess chemical agent on the electroplating surface of the target wafer 50 is guided by the bottom wall 113 of the shell to the bottom of the collecting cavity 115.

[0066] In the present application, the transmission mechanism 40 comprises a first driving member 41 and a second driving member 42.

[0067] Specifically, referring to Figures 1 to 3 and Figure 5 , the first driving member 41 comprises a rotary cylinder 411 and a rotary arm 412 connected to the rotary cylinder 411, and the second driving member 42 is a linear module comprising a guide rail 421 extending in the vertical direction and a sliding seat 422 connected to the guide rail 421 and moving in the vertical direction.

[0068] The fixed part of the rotary cylinder 411 is connected to the sliding seat 422 of the linear module, the rotary arm 412 extends in the horizontal direction, and the rotary arm 412 is connected to the rotating part of the rotary cylinder 411. The fixing member 30 is connected to the end of the rotary arm 412 away from the second driving member 42. When the sliding seat 422 moves in the vertical direction, it drives the first driving member 41 to move in the vertical direction, so that the first driving member 41 drives the fixing member 30 to move between the first position and the second position.

[0069] The first position of the fixing member 30 is set as the initial position. After the pre-wetting of the electroplating surface 51 of the target wafer 50 is completed, the sliding seat 422 moves downward and drives the first driving member 41 to move downward, at this time, the fixing member 30 is away from the first position. Subsequently, the sliding seat 422 continues to move downward, and before the fixing member 30 is away from the first position and reaches the second position, the rotating part of the rotary cylinder 411 rotates relative to the fixed part of the rotary cylinder 411, so that the rotary arm 412 of the first driving member 41 drives the fixing member 30 to rotate around the horizontal direction, thereby making the radial direction of the target wafer 50 be arranged at an angle with the vertical direction. Subsequently, the sliding seat 422 continues to move downward to make the target wafer 50 in the inclined state enter the electroplating cavity 211 for electroplating. When the fixing member 30 reaches the second position, the rotating part of the rotary cylinder 411 continues to rotate, so that the electroplating surface 51 of the target wafer 50 is perpendicular to the horizontal direction, and at this time, the electroplating surface 51 of the target wafer 50 is arranged downward along the vertical direction.

[0070] By entering the target wafer 50 into the electroplating liquid in the inclined state, it is prevented that bubbles enter the electroplating surface 51 of the target wafer 50 in the process of entering the electroplating liquid, so as to ensure the uniformity of the electroplating of the electroplating surface 51 of the target wafer 50.

[0071] After the plating operation on the target wafer 50 is completed, the slide 422 is moved upward to move the fixing member 30 from the second position to an arbitrary position between the first position and the second position, at this time, the rotating part on the first driving member 41 is reversed to rotate the surface to be plated 51 on the target wafer 50 to be set upward again, so as to facilitate the taking off of the target wafer 50 after the plating operation and the placing of a new target wafer 50 to be plated.

[0072] After the replacement of the target wafer 50 is completed, the slide 422 is moved upward to move the fixing member 30 to the first position again, so as to facilitate the plating operation on the next target wafer 50.

[0073] In another embodiment of the present application, the first driving member 41 comprises a servo motor 413 and a rotating arm 412 connected to the rotating shaft of the servo motor 413. The fixed part of the servo motor 413 is connected to the slide 422, the rotating arm 412 is connected to the rotating shaft of the servo motor 413, and the fixing member 30 is connected to the rotating arm 413, by adjusting the rotating angle of the rotating shaft of the servo motor 413, the fixing member 30 is driven to set the target wafer 50 at an angle to the vertical direction.

[0074] In an embodiment of the present application, please refer to Figures 1 to 5 , the transmission mechanism 40 further comprises a third driving member 43 connected to the first driving member 41, and the fixing member 30 is connected to the third driving member 43, the third driving member 43 is used to drive the fixing member 30 to rotate around the vertical direction.

[0075] Specifically, the third driving member 43 is a rotating motor, the fixed part of the third driving member 43 is connected to the rotating arm 412, and the fixing member 30 is connected to the rotating part of the third driving member 43.

[0076] When the fixing member 30 is in the first position, the third driving member 43 works, the rotating part of the third driving member 43 rotates to drive the fixing member 30 to rotate in the pre-wetting cavity 111, so that the fixing member 30 drives the target wafer 50 to rotate in the pre-wetting cavity 111, so that the chemical reagent uniformly covers the surface to be plated 51 of the target wafer 50, at the same time, when the target wafer 50 rotates, the excess chemical reagent enters the collection cavity 115 under the action of centrifugal force for collection.

[0077] When the fixing member 30 is in the second position, the third driving member 43 works, the rotating part of the third driving member 43 rotates to drive the fixing member 30 to rotate in the plating liquid in the plating cavity 211, so as to realize the rotating plating of the target wafer 50.

[0078] After the plating operation on the target wafer 50 is completed, the third driving member 43 stops working, the sliding seat 422 moves upward, thus the first driving member 41 drives the fixing member 30 to move upward, and the target wafer 50 on the fixing member 30 moves to the upper side of the plating solution, and at this time, the fixing member 30 is still in the plating cavity 211, then the third driving member 43 works again, the rotating part of the third driving member 43 drives the fixing member 30 to rotate again, so that the excess plating solution on the target wafer 50 re-enters the plating cavity 211 under the action of centrifugal force, and the excess plating solution on the target wafer 50 is spun dry.

[0079] In an embodiment of the present application, referring to Figures 1 to 3 , the plating mechanism 20 comprises a plating shell 21, an ion exchange membrane 22 and a plating anode 23.

[0080] The plating shell 21 is provided with a plating cavity 211. The ion exchange membrane 22 is installed in the plating cavity 211 and divides the plating cavity 211 into a cathode cavity 211a and an anode cavity 211b, and the plating anode 23 is installed in the anode cavity 211b. The ion exchange membrane 22 is used to make the cations from the anode cavity 211b enter the cathode cavity 211a, prevent the impurities in the anode cavity 211b from polluting the cathode cavity 211a, so as to ensure the plating yield of the target wafer 50. The cathode cavity 211a is located above the anode cavity 211b, and when the fixing member 30 is in the second position, the fixing member 30 and the target wafer 50 are both located in the cathode cavity 211a.

[0081] In the present application, the top wall of the plating shell 21 is provided with a shielding part 231, the second opening 212 is located at the top end of the shielding part 231, and the shielding part 231 is arranged at an angle with the vertical direction along the direction in which the second opening 212 points to the first opening 112.

[0082] Specifically, in an embodiment of the present application, referring to Figures 1 to 3 , the shielding part 231 is inclined towards the inner side of the plating shell 21 along the horizontal direction, and in the process of spinning dry the excess plating solution on the target wafer 50, after the plating solution is separated from the target wafer 50 under the action of centrifugal force, the excess plating solution re-enters the cathode cavity 211a under the flow guide of the inner wall of the shielding part 231.

[0083] In another embodiment of the present application, referring to Figure 4 , the shielding part 231 is inclined towards the outer side of the plating shell 21 along the horizontal direction, and in the process of spinning dry the excess plating solution on the target wafer 50, after the plating solution is separated from the target wafer 50 under the action of centrifugal force, the excess plating solution re-enters the cathode cavity 211a under the flow guide of the inner wall of the shielding part 231.

[0084] The above merely provides preferred embodiments of the present application, and is not used to limit the present application. Any modification, equivalent replacement, and improvement made in the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A wafer electroplating apparatus, characterized by comprising: The application relates to a wafer electroplating device. The device comprises a pre-wetting mechanism provided with a pre-wetting cavity having a first opening; an electroplating mechanism arranged below the pre-wetting mechanism along a vertical direction, the electroplating mechanism being provided with an electroplating cavity having a second opening, the first opening and the second opening being coaxially arranged; a fixing member for fixing a target wafer, the fixing member having a first position and a second position; and a transmission mechanism connected to the fixing member for driving the fixing member to move between the first position and the second position. When the fixing member is located at the first position, the fixing member transports the target wafer into the pre-wetting cavity to pre-wet the target wafer, and the fixing member closes the first opening; when the fixing member is located at the second position, the fixing member transports the target wafer into the electroplating cavity to electroplate the target wafer. The pre-wetting mechanism comprises a pre-wetting shell provided with the pre-wetting cavity; and a spraying port installed in the pre-wetting cavity for spraying a chemical reagent on the target wafer to pre-wet the target wafer.

3. The wafer electroplating device according to claim 2, wherein the pre-wetting shell is provided with a vacuum interface for being connected to a vacuum generator; and the vacuum generator is used to generate negative pressure in the pre-wetting cavity when the fixing member is located at the first position. The bottom of the pre-wetting shell is provided with a collecting cavity in communication with the pre-wetting cavity, and the collecting cavity is used to collect the chemical reagent.

2. The wafer electroplating apparatus of claim 1, wherein, 5. The wafer electroplating device according to claim 4, wherein the bottom wall of the pre-wetting shell is arranged at an angle with respect to the vertical direction, and the collecting cavity is formed by the bottom wall and the side wall of the pre-wetting shell.

6. The wafer electroplating device according to claim 5, wherein the first opening is located at the top end of the bottom wall. The transmission mechanism comprises a first driving member, the fixing member being connected to the first driving member, the first driving member being used to drive the fixing member to rotate around a horizontal direction; and a second driving member connected to the first driving member, the second driving member being used to drive the first driving member to move along the vertical direction. The transmission mechanism further comprises a third driving member connected to the first driving member, the fixing member being connected to the third driving member, the third driving member being used to drive the fixing member to rotate around the vertical direction. The electroplating mechanism comprises an electroplating shell provided with the electroplating cavity; an ion exchange membrane installed in the electroplating cavity and dividing the electroplating cavity into a cathode cavity and an anode cavity, the cathode cavity being located above the anode cavity; and an electroplating anode installed in the anode cavity.

10. The wafer electroplating device according to claim 9, wherein the top wall of the electroplating shell is provided with a shielding part, the second opening being located at the top end of the shielding part and pointing to the first opening along a direction of the second opening, and the shielding part is arranged at an angle with respect to the vertical direction.

4. The wafer electroplating apparatus of claim 3, wherein ​ ​ ​ ​ ​ 7. The wafer electroplating apparatus of claim 1 or 6, wherein ​ ​ ​ 8. The wafer electroplating apparatus of claim 7, wherein, ​ ​ 9. The wafer electroplating apparatus of claim 8, wherein, ​ ​ ​ ​ ​ ​

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