Film pasting device
By introducing a scanning mechanism and a control and analysis module into the film-laminating device, the particles on the wafer can be automatically detected and processed, solving the problems of long manual detection time and omissions, and improving the success rate of the wafer thinning process.
Patent Information
- Application Number
- CN202422614921.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-28
- Publication Date
- 2025-10-28
- Estimated Expiration
- 2034-10-28
AI Technical Summary
In the prior art, manual inspection of particles on wafers has the problem of long inspection time and easy omission of particles, which causes cracks in the wafer during the thinning process.
A film laminating device is used, including a first rotating table, a scanning mechanism and a control and analysis module. The scanning mechanism detects particles on the wafer and obtains size information. The control and analysis module compares the size information with a preset range and outputs corresponding control instructions, such as alarms or cleaning instructions, to automatically process the particles.
It realizes automated and rapid detection and processing of particles on wafers, reduces the time extension and omission risk of manual inspection, and improves the success rate of wafer thinning process.
Smart Images

Figure CN223486995U_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of semiconductor manufacturing technology, and more specifically, relates to a film application device. Background Technology
[0002] The wafer back-side processing refers to the process of treating the back side of the wafer. First, a film-coating process is performed on the back side. After the front side is coated, the back side undergoes back-side thinning. Currently, with continuous advancements in technology, wafer thickness is constantly decreasing. During wafer thinning, to prevent silicon powder contamination of the front side, a film-coating process is typically performed on the front side to improve the uniformity of wafer thinning and thus reduce the risk of wafer cracking.
[0003] When applying a film to the front side of a wafer, particles may occasionally be present at the interface between the film and the wafer. Large particles can cause the wafer surface to bulge after film application, which can easily lead to wafer cracks and product scrap during the physical thinning process. Furthermore, particles can accumulate on the surface of the wafer when it is stored for a long time.
[0004] Currently, when dealing with particulate matter on wafers, the usual method is to manually remove the film on the wafer surface and then re-apply the film to the wafer. The problems with this technical solution are: it prolongs the wafer production time, and manual inspection of particulate matter is prone to missing particulate matter on the wafer, which can lead to cracks in the wafer during the wafer thinning process. Summary of the Invention
[0005] The purpose of this application is to provide a film-applying device to solve the technical problems of long detection time and missed particles when manually detecting particles on wafers in the prior art.
[0006] To achieve the above objectives, the technical solution adopted in this application is: to provide a film application device, comprising:
[0007] The first rotary table is used to fix the target wafer and drive the target wafer to rotate;
[0008] The scanning mechanism is configured to transmit and receive scanning signals radially along the first rotary table, and the side of the target wafer facing away from the first rotary table is located on the scanning path of the scanning signal. The scanning mechanism is used to detect particles on the target wafer and obtain the size information of the particles.
[0009] The control and analysis module is electrically connected to the scanning mechanism and is used to receive the size information, compare the size information with a preset range set therein, and output control commands corresponding to the comparison results.
[0010] Optionally, the scanning mechanism includes:
[0011] A first signal transmitter is disposed at one end along the radial direction of the first rotary table and is used to transmit the scanning signal;
[0012] A first signal receiver is disposed at the other end of the first rotating platform radially, and the first signal transmitter and the first signal receiver are disposed opposite to each other. The first signal receiver is used to receive the scanning signal.
[0013] Optionally, the first signal transmitter is an infrared laser transmitter, and the first signal receiver is an infrared signal receiver.
[0014] Optionally, it also includes:
[0015] The alarm is electrically connected to the control and analysis module;
[0016] When the size information is greater than the preset range, the control analysis module generates an alarm control command and transmits the alarm control command to the alarm device. The alarm device receives the alarm control command and generates an alarm signal according to the alarm control command.
[0017] Optionally, it also includes:
[0018] The cleaning mechanism is electrically connected to the control and analysis module;
[0019] When the size information is within the preset range, the control analysis module generates a cleaning control command and transmits the cleaning control command to the cleaning mechanism;
[0020] The cleaning mechanism receives the cleaning control command and cleans the target wafer within a preset time period according to the cleaning control command.
[0021] Optionally, the cleaning mechanism includes:
[0022] A cleaning pump, electrically connected to the control and analysis module, is used to receive the cleaning control command;
[0023] A nozzle is connected to the cleaning pump and is used to spray cleaning liquid onto the target wafer as the target wafer rotates.
[0024] Optionally, the cleaning mechanism further includes:
[0025] The second rotating stage, spaced apart from the first rotating stage, is used to fix and drive the target wafer to rotate when the nozzle cleans the target wafer.
[0026] Optionally, it also includes:
[0027] A robotic arm, electrically connected to the control and analysis module, is used to transport the target wafer between the first rotary table and the second rotary table according to the transport control commands generated by the control and analysis module.
[0028] Optionally, it also includes:
[0029] A storage module, electrically connected to the control and analysis module, is used to store the comparison results.
[0030] Optionally, it also includes:
[0031] The positioning mechanism is configured to transmit and receive positioning signals along the axial direction of the first rotary table and is electrically connected to the control and analysis module. The positioning mechanism is used to acquire the position information of particles when the target wafer is rotated.
[0032] The beneficial effects of the film-applying device provided in this application are as follows: Compared with the prior art, the film-applying device provided in this application includes a first rotating stage, a scanning mechanism, and a control and analysis module. The first rotating stage is used to fix the target wafer and drive the target wafer to rotate. The scanning mechanism is configured to transmit and receive scanning signals radially along the first rotating stage, and the side of the target wafer facing away from the first rotating stage is located on the scanning path of the scanning signals. The scanning mechanism is used to detect particles on the target wafer and obtain the size information of the particles. The control and analysis module is electrically connected to the scanning mechanism and is used to receive the size information, compare the size information with a preset range set therein, and output control commands corresponding to the comparison results. For example, it may issue an alarm command to remind the operator when the size information of the particles is greater than the preset range, or issue a cleaning control command to clean the target wafer when the size information of the particles is within the preset range. Attached Figure Description
[0033] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0034] Figure 1 This is a schematic diagram of the film-applying device provided in the embodiments of this application;
[0035] Figure 2 This is a schematic diagram of the scanning mechanism structure provided in an embodiment of this application;
[0036] Figure 3 A schematic diagram showing the scanning signal being blocked by particulate matter;
[0037] Figure 4 This is a schematic diagram of the structure of a film-applying device provided in another embodiment of this application.
[0038] The following are the labeling elements in the figure:
[0039] 10. First rotary table; 20. Scanning mechanism; 21. First signal transmitter; 22. First signal receiver; 30. Control and analysis module; 40. Target wafer; 41. Particulate matter; 42. Positioning slot; 50. Alarm; 60. Cleaning mechanism; 61. Cleaning pump; 62. Nozzle; 63. Second rotary table; 70. Robotic arm; 80. Storage module; 90. Positioning mechanism; 91. Second signal transmitter; 92. Second signal receiver. Detailed Implementation
[0040] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.
[0041] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.
[0042] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.
[0043] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. Throughout the description of this application, "plurality" means two or more, unless otherwise specifically defined.
[0044] Please also refer to Figures 1 to 3 The film-applying device provided in the embodiments of this application will now be described.
[0045] A film application device, please refer to Figure 1 It includes a first rotary table 10, a scanning mechanism 20, and a control and analysis module 30.
[0046] The first rotating stage 10 can fix the target wafer 40 by vacuum adsorption and drive the target wafer 40 to rotate.
[0047] The scanning mechanism 20 is configured to transmit and receive scanning signals radially along the first rotating stage 10, and the side of the target wafer 40 away from the first rotating stage 10 is located on the scanning path of the scanning signal. The scanning mechanism 20 is used to detect particles 41 on the target wafer 40 and obtain the size information of the particles 41.
[0048] The control analysis module 30 is electrically connected to the scanning mechanism 20. It is used to receive dimensional information, compare the dimensional information with a preset range set therein, and output control commands corresponding to the comparison results.
[0049] If the size of the particles 41 on the target wafer 40 is larger than a preset range, the control analysis module 30 generates an alarm control command to alert the operator. If the size of the particles 41 on the target wafer 40 is within the preset range, the control analysis module 30 generates a cleaning control command to clean the particles 41 on the target wafer 40 using a film-applying device. If the size of the particles 41 on the target wafer 40 is smaller than the preset range, the control analysis module 30 generates a film-applying control command to apply a film to the target wafer 40 using a film-applying device.
[0050] Compared with the prior art, the film application device provided in this application includes a first rotating stage 10, a scanning mechanism 20, and a control and analysis module 30. The first rotating stage 10 is used to fix the target wafer 40 and drive the target wafer 40 to rotate. The scanning mechanism 20 is configured to transmit and receive scanning signals radially along the first rotating stage 10, with the side of the target wafer 40 facing away from the first rotating stage 10 located on the scanning path of the scanning signals. The scanning mechanism 20 is used to detect particles 41 on the target wafer 40 and acquire the size information of the particles 41. The control and analysis module 30 is electrically connected to the scanning mechanism 20, and is used to receive the size information, compare the size information with a preset range set therein, and output control commands corresponding to the comparison results. If the size of particulate matter 41 is greater than a preset range, the control and analysis module 30 issues an alarm control command to remind the operator; if the size of particulate matter 41 is within the preset range, the control and analysis module 30 issues a cleaning control command to clean the target wafer 40; or, if the size of particulate matter 41 is less than the preset range, the control and analysis module 30 issues a film application control command, and the film application device applies film to the end face of the target wafer 40 to be applied.
[0051] In one embodiment of this application, a preset range is set to 2mm to 8mm. That is, when the size of the particulate matter 41 is greater than 8mm, the control analysis module 30 issues an alarm control command; when the size is between 2mm and 8mm, the control analysis module 30 issues a cleaning control command; and when the size of the particulate matter 41 is less than 2mm, the control analysis module 30 issues a film application control command.
[0052] In this application, please refer to Figures 1 to 3 The scanning mechanism 20 includes a first signal transmitter 21 and a first signal receiver 22.
[0053] A first signal transmitter 21 is disposed at one end radially along the first rotary table 10 and is used to transmit scanning signals. A first signal receiver 22 is disposed at the other end radially along the first rotary table 10, and the first signal transmitter 21 and the first signal receiver 22 are disposed opposite to each other. The first signal receiver 22 is used to receive scanning signals.
[0054] Please see Figures 1 to 3 The rotation axis of the first rotating stage 10 is parallel to the vertical direction. The first signal transmitter 21 transmits a scanning signal in the horizontal direction, which scans the end face of the target wafer 40 to be coated with the film in the horizontal direction. The first signal receiver 22 receives the scanning signal transmitted by the first signal transmitter 21 in the horizontal direction.
[0055] When there are no particles 41 on the end face of the film to be applied on the target wafer 40, the first signal receiver 22 is set to receive 100% of the scanning signal energy.
[0056] If there are particles 41 on the end face of the target wafer 40 to be coated, the particles 41 will block part of the scanning signal. Since the first rotary table 10 drives the target wafer 40 to rotate, the scanning mechanism 20 can obtain the size information range of the particles 41 during the rotation of the target wafer 40. The energy of the scanning signal blocked by the size information of the particles 41 is set as X. Then, when there are particles 41 on the end face of the target wafer 40 to be coated, the energy rate of the scanning signal received by the first signal receiver 22 is 100-X.
[0057] Meanwhile, the control module in the scanning mechanism 20 calculates the size information of the particulate matter 41 based on the energy rate of the scanning signal received by the first signal receiver 22, and transmits the size information of the particulate matter 41 to the control analysis module 30 so that the control analysis module 30 can compare the size information of the particulate matter 41 with the preset range.
[0058] Preferably, in this application, the first signal transmitter 21 is an infrared laser transmitter, and the first signal receiver 22 is an infrared signal receiver.
[0059] In this application, the film application device also includes an alarm 50.
[0060] Please see Figure 1 The alarm 50 is electrically connected to the control and analysis module 30. When the size of the particulate matter 41 exceeds a preset range, the control and analysis module 30 generates an alarm control command and transmits the alarm control command to the alarm 50. The alarm 50 receives the alarm control command and generates an alarm signal according to the alarm control command. At this time, the film application device stops according to the alarm control command.
[0061] In this application, the film application device also includes a cleaning mechanism 60. The cleaning mechanism 60 is electrically connected to the control and analysis module 30.
[0062] When the size of the particulate matter 41 is within a preset range, the control analysis module 30 generates a cleaning control command and transmits it to the cleaning mechanism 60. The cleaning mechanism 60 receives the cleaning control command and cleans the target wafer 40 within a preset time period according to the command.
[0063] In this application, the cleaning mechanism 60 includes a cleaning pump 61 and a nozzle 62.
[0064] Please see Figure 1 The cleaning pump 61 is electrically connected to the control and analysis module 30 and is used to receive cleaning control commands. The nozzle 62 is connected to the cleaning pump 61 through a pipe and is used to spray cleaning liquid onto the target wafer 40 as the target wafer 40 rotates.
[0065] Upon receiving a cleaning control command, the cleaning pump 61 starts and runs for a preset time period, such as 30 seconds, to inject deionized water through a pipe into the nozzle 62. The nozzle 62 then sprays the deionized water onto the end face of the target wafer 40 to remove particles 41 from the target wafer 40. If the cleaning pump 61 runs for longer than the preset time period, the control and analysis module 30 controls the cleaning pump 61 to shut off power to stop cleaning the target wafer 40.
[0066] In one embodiment of this application, please refer to Figure 1 The nozzle 62 is positioned relative to the first rotating stage 10. After the control and analysis module 30 outputs a cleaning control command, the cleaning pump 61 is turned on and the nozzle 62 cleans the target wafer 40 located on the first rotating stage 10. After cleaning is completed, the control and analysis module 30 controls the film application device to apply the film to the surface of the target wafer 40 to be applied.
[0067] In another embodiment of this application, the cleaning mechanism 60 further includes a second rotary table 63.
[0068] Please see Figure 4The second rotating stage 63 is spaced apart from the first rotating stage 10. The second rotating stage 63 can fix the target wafer 40 by vacuum adsorption and drive the target wafer 40 to rotate. When the target wafer 40 needs to be cleaned, it needs to be transferred from the first rotating stage 10 to the second rotating stage 63 for cleaning.
[0069] In order to transfer the target wafer 40 from the first rotary table 10 to the second rotary table 63, in this embodiment, the film application device also includes a robotic arm 70.
[0070] Please see Figure 4 The robotic arm 70 is electrically connected to the control and analysis module 30 and is located between the first rotary table 10 and the second rotary table 63. The position of the nozzle 62 corresponds to the position of the second rotary table 63. The robotic arm 70 is used to transport the target wafer 40 between the first rotary table 10 and the second rotary table 63 according to the transport control command generated by the control and analysis module 30.
[0071] Specifically, the conveying control commands include a first conveying control command and a second conveying control command.
[0072] When the size information of the particulate matter 41 is within a preset range, the control analysis module 30 first generates a first conveying control command and transmits the first conveying control command to the robot arm 70. The robot arm 70 transfers the target wafer 40 from the first rotary table 10 to the second rotary table 63 according to the first conveying control command. At this time, the control analysis module 30 controls the second rotary table 63 to rotate and fix the target wafer 40. Subsequently, the control analysis module 30 generates a cleaning control command so that the nozzle 62 cleans the target wafer 40.
[0073] After the cleaning mechanism 60 completes the cleaning of the target wafer 40 after a preset time period, the control and analysis module 30 generates a second transport control command and transmits it to the robot arm 70. The robot arm 70 transfers the target wafer 40 from the second rotary table 63 to the first rotary table 10 according to the second transport control command. Subsequently, the control and analysis module 30 controls the film application device to apply the film to the surface of the target wafer 40 to be filmed.
[0074] In one embodiment of this application, please refer to Figure 1 and Figure 4 The film application device also includes a storage module 80, which is electrically connected to the control and analysis module 30 and is used to store comparison results.
[0075] Specifically, the control analysis module 30 stores the comparison results of the size information of the particles 41 on each target wafer 40 with a preset range, so as to facilitate the subsequent tracking of the size information of the particles 41 on the target wafer 40.
[0076] In this application, please refer to Figure 1 and Figure 4 The film application mechanism also includes a positioning mechanism 90.
[0077] The positioning mechanism 90 is configured to transmit and receive positioning signals along the axis of the first rotary table 10 and is electrically connected to the control and analysis module 30. The positioning mechanism 90 is used to acquire the position information of the particles 41 when the target wafer 40 is rotating.
[0078] Specifically, the positioning mechanism 90 includes a second signal transmitter 91 and a second signal receiver 92. The second signal transmitter 91 is spaced apart from the second signal transmitter 92 along the axial direction of the first rotary table 10, and the target wafer 40 is located between the second signal transmitter 91 and the second signal receiver 92. The second signal transmitter 91 is used to transmit positioning signals, and the second signal receiver 92 is used to receive the positioning signals transmitted by the second signal transmitter 91.
[0079] Please see Figures 1 to 4 The target wafer 40 has a positioning slot 42 at its edge. When the positioning slot 42 is misaligned with the second signal transmitter 91 and the second signal receiver 92, the positioning signal is blocked by the target wafer 40, and the second signal receiver 92 cannot receive the positioning signal. When the positioning slot 42 is rotated to be aligned with the second signal transmitter 91 and the second signal receiver 92, the positioning signal passes through the positioning slot 42 and is received by the second signal receiver 92.
[0080] When the target wafer 40 is fixed on the first rotary table 10, the positioning slot 42 is first positioned by the positioning mechanism 90. After the positioning mechanism 90 completes the positioning of the positioning slot 42, the positioning mechanism 90 generates a positioning completion signal and transmits the positioning completion signal to the control and analysis module 30. The control and analysis module 30 starts the scanning mechanism 20 according to the positioning completion signal. During this process, the first rotary table 10 continues to rotate, and at this time, the control and analysis module 30 sets the zero point values of time and rotation angle inside its internal system.
[0081] When the scanning mechanism 20 scans the information of the particles 41 on the target wafer 40, the time taken for the scanning mechanism 20 to scan the particles 41 on the target wafer 40 is set to T. The rotation angle of the scanning mechanism 20 when scanning the particles 41 on the target wafer 40 is θ, and the rotation speed V of the target wafer 40 can be obtained from the rotation speed of the first rotating stage 10. Therefore, the value of R can be obtained according to the formula: T=(2πR*θ) / (360*V), where R is the distance from the particle 41 to the center of the target wafer 40.
[0082] After the positioning mechanism 90 obtains the distance between the particle 41 and the center of the target wafer 40, it transmits the distance value between the particle 41 and the target wafer 40 to the control and analysis module 30, and the control and analysis module 30 transmits the distance value between the particle 41 and the target wafer 40 to the storage module 80 for storage, so as to facilitate subsequent data tracking.
[0083] In this application, preferably, the second signal transmitter 91 is an X-ray transmitter and the second signal receiver 92 is an X-ray receiver.
[0084] The above are only preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent replacements, and improvements made within the spirit and principles of the present application should be included in the scope of protection of the present application.
Claims
1. A film-applying device for applying a film to the end face of a target wafer, characterized in that, include: The first rotary table is used to fix the target wafer and drive the target wafer to rotate; The scanning mechanism is configured to transmit and receive scanning signals radially along the first rotary table, and the side of the target wafer facing away from the first rotary table is located on the scanning path of the scanning signal. The scanning mechanism is used to detect particles on the target wafer and obtain the size information of the particles. The control and analysis module is electrically connected to the scanning mechanism and is used to receive the size information, compare the size information with a preset range set therein, and output control commands corresponding to the comparison results.
2. The film-applying device as described in claim 1, characterized in that, The scanning mechanism includes: A first signal transmitter is disposed at one end along the radial direction of the first rotary table and is used to transmit the scanning signal; A first signal receiver is disposed at the other end of the first rotating platform radially, and the first signal transmitter and the first signal receiver are disposed opposite to each other. The first signal receiver is used to receive the scanning signal.
3. The film-applying device as described in claim 2, characterized in that, The first signal transmitter is an infrared laser transmitter, and the first signal receiver is an infrared signal receiver.
4. The film-applying device as described in claim 1, characterized in that, Also includes: The alarm is electrically connected to the control and analysis module; When the size information is greater than the preset range, the control analysis module generates an alarm control command and transmits the alarm control command to the alarm device. The alarm device receives the alarm control command and generates an alarm signal according to the alarm control command.
5. The film-applying device as described in claim 4, characterized in that, Also includes: The cleaning mechanism is electrically connected to the control and analysis module; When the size information is within the preset range, the control analysis module generates a cleaning control command and transmits the cleaning control command to the cleaning mechanism; The cleaning mechanism receives the cleaning control command and cleans the target wafer within a preset time period according to the cleaning control command.
6. The film-applying device as described in claim 5, characterized in that, The cleaning mechanism includes: A cleaning pump, electrically connected to the control and analysis module, is used to receive the cleaning control command; A nozzle is connected to the cleaning pump and is used to spray cleaning liquid onto the target wafer as the target wafer rotates.
7. The film-applying device as described in claim 6, characterized in that, The cleaning mechanism also includes: The second rotating stage, spaced apart from the first rotating stage, is used to fix and drive the target wafer to rotate when the nozzle cleans the target wafer.
8. The film-applying device as described in claim 7, characterized in that, Also includes: A robotic arm, electrically connected to the control and analysis module, is used to transport the target wafer between the first rotary table and the second rotary table according to the transport control commands generated by the control and analysis module.
9. The film application device as claimed in claim 1, further comprising: A storage module, electrically connected to the control and analysis module, is used to store the comparison results.
10. The film application device as described in claim 1 or 9, further comprising: The positioning mechanism is configured to transmit and receive positioning signals along the axial direction of the first rotary table and is electrically connected to the control and analysis module. The positioning mechanism is used to acquire the position information of particles when the target wafer is rotated.