Electronic device

Abstract

The utility model discloses an electronic device, and the electronic device comprises an antenna array which comprises a plurality of antenna units; the photoelectric detection unit comprises a plurality of photoelectric detection units, and the plurality of photoelectric detection units and the plurality of antenna units are arranged in a one-to-one manner; the photon integrated circuit is used for receiving an optical signal from the outside of the electronic device; and an optical lead connecting the photonic integrated circuit and each of the photoelectric detection units and providing an optical path between the photonic integrated circuit and each of the photoelectric detection units. According to the technical scheme, the signal delay can be reduced at least at a high transmission rate.

Description

Technical Field

[0001] This application relates to the fields of semiconductor and antenna technology, and more specifically, to an electronic device. Background Technology

[0002] With the rapid development of communication technology, the demand for high-speed data transmission is increasing daily. According to the Shannon–Hartley Theorem, the maximum achievable channel capacity is C = B·log2(1+S / N), where C represents capacity (in bps), B represents bandwidth (in Hz), and S / N represents signal-to-noise ratio. The maximum achievable data rate is directly proportional to the bandwidth B. Current 5G communication technologies mainly use frequency bands below 6GHz. Even when using millimeter-wave bands (24GHz to 100GHz), the transmission rate and latency of these bands are approaching their theoretical limits, failing to meet the vision of future 6G communication systems that will achieve higher data rates, greater bandwidth, and lower latency. The specific specifications expected for 6G communication systems are as follows: 1. Data rate: 6G is expected to achieve a data rate of 1 Tbps (terabit per second); 2. Bandwidth: 6G will use frequency bands above 100 GHz to provide greater bandwidth and higher data transmission capabilities; 3. Latency: 6G aims to achieve ultra-low latency of less than 1 millisecond to support real-time applications and high-precision control; 4. Connection density: 6G will support a connection density of over 1 million devices per square kilometer; 5. Reliability: 6G systems will provide near 100% reliability to meet the needs of critical applications. Potential new frequency bands for achieving terabit-class data rates in 6G, including the D band (110 GHz–170 GHz), the G band (140 GHz–220 GHz), and the H / J band (220 GHz–330 GHz), have been widely discussed.

[0003] With the rapid development of communication technology, future 6G base stations will require higher data transmission speeds and greater bandwidth to meet the ever-increasing data demands. However, traditional copper wire transmission methods have reached their physical limits and can no longer effectively support such high transmission requirements. Utility Model Content

[0004] To address the above problems, this application proposes an electronic device that can reduce signal delay at least at high transmission rates.

[0005] The technical solution of this application is implemented as follows:

[0006] According to one aspect of this application, an electronic device is provided, comprising: an antenna array including a plurality of antenna elements; a photoelectric detection circuit including a plurality of photoelectric detection units, wherein the plurality of photoelectric detection units are configured one-to-one with the plurality of antenna elements; a photonic integrated circuit for receiving optical signals from outside the electronic device; and optical leads connecting the photonic integrated circuit to each photoelectric detection unit and providing an optical path between the photonic integrated circuit and each photoelectric detection unit.

[0007] In some embodiments, the electronic device further includes: a carrier plate having a first surface and a second surface opposite to the first surface, wherein an antenna array is disposed on the first surface and a photoelectric detection circuit is disposed on the second surface.

[0008] In some embodiments, a photonic integrated circuit is disposed on the second surface of a carrier plate and spaced apart from a plurality of photodetector units.

[0009] In some embodiments, the carrier plate includes a glass substrate having glass through-holes that electrically connect the antenna unit and the corresponding photoelectric detection unit.

[0010] In some embodiments, the antenna unit and the photodetector unit are configured one-to-one in the vertical direction from the first surface to the second surface.

[0011] In some embodiments, the photonic integrated circuit and each photodetector unit substantially overlap in the horizontal direction.

[0012] In some embodiments, a photonic integrated circuit is disposed in the central region of a carrier plate, and each photodetector unit is disposed in the surrounding region of the carrier plate.

[0013] In some embodiments, multiple photoelectric detection units surround a photonic integrated circuit.

[0014] In some embodiments, optical leads extend from a first surface of the back substrate of the photodetector unit to a first surface of the back substrate of the photonic integrated circuit.

[0015] In some embodiments, the glass through-hole is connected to the second surface of the photodetector unit facing the carrier plate.

[0016] The beneficial effects of the above technical solution include: by replacing the electrical transmission method of the traditional wire between the photonic integrated circuit and the photoelectric detection unit with optical lead for optical signal transmission in the antenna signal feed path between the photonic integrated circuit and the antenna unit, the signal transmission rate can be improved, and the signal delay can be reduced at high transmission rates. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1A This is a cross-sectional schematic diagram of an electronic device according to an embodiment of this application.

[0019] Figure 1B and Figure 1C They are Figure 1A A planar schematic diagram of different sides of the electronic device.

[0020] Figure 2A and Figure 2B This is a schematic diagram of optical leads formed using femtosecond laser direct writing technology based on two-photon polymerization.

[0021] Figure 2C It is to utilize Figure 2A and Figure 2B The diagram shows an optical lead formed between the first chip and the second chip.

[0022] Figure 3A and Figure 3B These are power schematic diagrams of the antenna arrays of the electronic devices in embodiments of this application.

[0023] Figure 3C This is a schematic diagram of the antenna array of the electronic device according to an embodiment of this application, showing the beams in different directions.

[0024] Figure 4 and Figure 5 These are cross-sectional schematic diagrams of electronic devices 300 according to other different embodiments of this application. Detailed Implementation

[0025] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0026] The following disclosure provides numerous different embodiments or instances for implementing various features of the provided subject matter. Specific examples of elements and arrangements will be described below to simplify the present invention. These are merely examples and are not intended to limit the present invention. For example, in the following description, forming a first component above or on a second component may include embodiments where the first and second components are in direct contact, or embodiments where an additional component is formed between the first and second components such that the first and second components are not in direct contact. Furthermore, reference numerals and / or letters may be repeated in various instances of the present invention. Such repetition is merely for brevity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0027] Furthermore, where there is no conflict, the embodiments and features described in this application can be combined with each other. This application will now be described in detail with reference to the accompanying drawings and embodiments.

[0028] Figure 1A This is a cross-sectional schematic diagram of an electronic device 100 according to an embodiment of this application. Figure 1B and Figure 1C They are Figure 1A A plan view of different sides of the electronic device 100. (Reference) Figures 1A to 1C As shown, the electronic device 100 may include an antenna array 10 composed of multiple antenna elements 12 and a photoelectric detection circuit 30 composed of multiple photoelectric detection units 32. The multiple photoelectric detection units 32 can be configured one-to-one with the multiple antenna elements 12, that is, each photoelectric detection unit 32 is connected to a corresponding antenna element 12, for example, by electrical connection.

[0029] The electronic device 100 may further include a PIC (Photonic Integrated Circuit) 60, which can be used to receive optical signals from outside the electronic device 100. In some embodiments, the PIC 60 can receive optical signals from outside the electronic device 100 via an optical fiber 220. In some embodiments, the optical fiber 220 can be connected to the PIC 60 via an optical interface element 103 (e.g., a grating).

[0030] The PIC 60 is connected to each photodetector unit 32 via a photonic wire bonded (PWB) 80, which provides an optical path between the PIC 60 and each photodetector unit 32. In some embodiments, the optical wire 80 can be any suitable material capable of transmitting optical signals. The PIC 60 can transmit the optical signal received from the optical fiber 220 to the photodetector unit 32 through the optical path provided by the optical wire 80.

[0031] In view of the problem that the electrical transmission method of conventional wires in the existing technology has reached the physical limit in the direction of data transmission rate, the above-mentioned technical solution of this application replaces the electrical transmission method of conventional wires between PIC 60 and photoelectric detection unit 32 with optical lead 80 for optical signal transmission in the antenna signal feed path between PIC 60 and antenna unit 12. This can improve the signal transmission rate and reduce signal delay at high transmission rates.

[0032] Continue to refer to Figures 1A to 1C As shown, the electronic device 100 may further include a carrier plate 51. The carrier plate 51 has a first surface 51a and a second surface 51b opposite to the first surface 51a. In this embodiment, the antenna array 10 is disposed on the first surface 51a, and the photodetector circuit 30 and PIC 60 are disposed on the second surface 51b of the carrier plate 51. In some embodiments, each antenna element 12 in the antenna array 10 may include a patterned metal layer disposed on the first surface 51a. In some embodiments, the carrier plate 51 may be a glass substrate. The glass substrate has a relatively high Young's modulus, so the antenna element 12 formed thereon can have high flatness.

[0033] The PIC 60 and each photodetector unit 32 substantially overlap in the horizontal direction. That is, the PIC 60 and each photodetector unit 32 can be located at the same level, for example, in this embodiment, both are located on the second surface 51b of the carrier plate 51.

[0034] The photoelectric detection unit 60 is spaced apart from multiple photoelectric detection units 32. The photoelectric detection unit 60 is located in the central area of ​​the carrier plate 51, and each photoelectric detection unit 32 is located in the surrounding area of ​​the carrier plate 51. The multiple photoelectric detection units 32 surround the photoelectric detection unit 60.

[0035] There are multiple optical leads 80, and each optical lead 80 is configured one-to-one with a number of photoelectric detection units 32. One end of each optical lead 80 is connected to the first surface 60a of the back carrier plate 51 of the PIC 60, and the other end of the optical lead 80 is connected to the first surface 32a of the back carrier plate 51 of a corresponding photoelectric detection unit 32.

[0036] exist Figure 1A In the vertical direction from the first surface 51a to the second surface 51b, the optical lead 80 is separated from the carrier plate 51. The optical lead 80 may be a 3D structure, therefore the distance between the optical lead 80 and the carrier plate 51 varies in the vertical direction. The extension trajectory of the optical lead 80 may include an arcuate trajectory.

[0037] Figure 2A and Figure 2BThis is a schematic diagram illustrating the formation of optical leads 80 using femtosecond laser direct writing technology based on two-photon polymerization (TPP). Combined with... Figure 2A and Figure 2B As shown, the photolithography system executes controlled movement of the system focus (i.e., a write strategy) using a certain amount of photoresist material 302, for example, it can move along the write direction D. The photolithography beam 305 is focused to a focal point 312, where the photoresist material forms a 3D optical lead 80 through a two-photon polymerization effect. Figure 2B The diagram shows a written line 801 and a line to be written 802 used to form an optical lead 80. In some embodiments, the alignment accuracy of the formed optical lead 80 can be accurate to less than 0.1 micrometers.

[0038] Figure 2C It is to utilize Figure 2A and Figure 2B The diagram illustrates the optical lead 80 formed between the first chip 201 and the second chip 202. (This is in conjunction with...) Figure 2C As shown, the 3D optical lead 80 can be formed across a first chip 201 and a second chip 202 with different heights. In some embodiments, the cross-sectional dimensions of the optical lead 80 can have a diameter of approximately 3.2 micrometers. The distance h between the highest point of the optical lead 80 and the top surface of the higher second chip 202 can be approximately 12 micrometers, and the distance h+Δh between the top surface of the higher second chip 202 and the top surface of the lower first chip 201 can be approximately 30 micrometers. In some embodiments, it can be... Figures 2A to 2C The method discussed forms an optical lead 80 between the PIC 60 and the photodetector unit 32.

[0039] Return to reference Figures 1A to 1C Unlike the connection between the PIC 60 and the photodetector unit 32 via optical leads 80, the photodetector unit 32 and the corresponding antenna unit 12 can be interconnected via conductive lines. In some embodiments, the conductive lines include through-holes 42 passing through the carrier plate 51 to electrically connect the photodetector unit 32 and the corresponding antenna unit 12.

[0040] In some embodiments where the carrier plate 51 can be a glass substrate, the through-hole 42 is a through-hole that passes through the glass substrate. Such a through-hole 42 can be referred to as a through-glass via (TGV), which serves as a conductive line to electrically connect the antenna unit 12 and the corresponding photodetector unit 32. Specifically, the optical lead 80 extends from the first surface 32a of the photodetector unit 32 to the first surface 60a of the PIC 60, and one end of the through-hole 42 is connected to the second surface 51b of the photodetector unit 32 facing the carrier plate 51. The other end of the through-hole 42 is connected to the corresponding antenna unit 12. In the vertical direction, the antenna unit 12 and the photodetector unit 32 are configured one-to-one. The antenna unit 12 and its corresponding photodetector unit 32 are connected through the through-hole 42.

[0041] In some embodiments, the electronic device 100 may optionally include a cover 90, which can seal various components on the second surface 51b of the carrier plate 51, such as the PIC 60 and the photodetector unit 32. The cover 90 can serve as a signal shield to isolate crosstalk between the various components on the second surface 51b and adjacent electronic components / modules. In some embodiments, the cover 90 is made of a metallic material that can be used as a signal shield.

[0042] The operation of the electronic device 100 may include the following steps: (1) Optical signal transmission: transmitting data signals to the PIC 60 using optical fiber 220 or other optical transmission media; (2) Generating phase difference optical signals: generating multiple optical signals with phase differences by the PIC 60, for example, generating multiple optical signals with phase differences by heating the optical waveguide using the thermo-optic effect; (3) Photoelectric conversion: converting the received optical signals into electrical signals, this process is achieved using a high-efficiency photoelectric conversion device (such as photoelectric detection unit 32); (4) Electron radiation: radiating the converted electrical signals (e.g., through through-hole 42) to the antenna unit 12, combining array technology to achieve beam scanning, using a glass substrate to fabricate the antenna unit 12, which can effectively operate in a bandwidth of over 100 GHz. The electronic device integrates the PIC 60 and electrical integrated circuits and achieves high-efficiency packaging through optical lead technology.

[0043] Since the achievable data rate is proportional to the bandwidth, this application can increase the achievable signal frequency band by increasing the signal transmission rate, thereby providing a wider bandwidth. (Reference) Figures 3A to 3BAs shown, the electronic device 100 provided in this application can achieve higher frequency bands and wider bandwidths. On the other hand, due to the higher frequency bands, signals are more prone to attenuation. In this regard, phased array technology can be further combined to achieve beam scanning, making the beam transmitted by the antenna array 10 directionally controllable, thereby enabling the beam to be transmitted in a specific direction to reduce signal attenuation. (Reference) Figure 3C As shown, the embodiments provided in this application can achieve high power in multiple directions.

[0044] In summary, the embodiments of this application provide an electronic device with a high-frequency antenna array. It utilizes optical signal transmission and converts it into electromagnetic radiation, combines phased array technology to achieve beam scanning, and connects photonic integrated circuits and electrical integrated circuits via optical lead connection technology. This antenna is fabricated using a glass substrate, solving the problem of poor antenna performance in existing technologies. The antenna array can achieve higher data rates (e.g., data rates exceeding 1000 Gbps), has broad application prospects, and is particularly suitable for future 6G communication base stations to align with the vision of 6G.

[0045] In another aspect, embodiments of this application also provide another electronic device 200. (See reference...) Figure 4 As shown, in this embodiment, the PIC 60 and the photodetector unit 32 are optically connected via an optical waveguide 82. The optical waveguide 82 can extend along the second surface 51b of the carrier plate 51 between the PIC 60 and the photodetector unit 32.

[0046] Figure 5 This is a cross-sectional schematic diagram of an electronic device 300 according to yet another embodiment of this application. (See reference) Figure 5 As shown, in this embodiment, the PIC 60 and the photoelectric detection unit 32 are electrically connected via conductive leads 84. In this embodiment, the chip 60' combines the functions of the PIC 60 and the photoelectric detection unit 32. The chip 60' can receive optical signals from the optical fiber 220, convert the optical signals into electrical signals, and then transmit the electrical signals to the antenna unit 12 through the conductive leads 84 and the through-hole 42.

[0047] Figure 4 and Figure 5 Other aspects of the electronic devices 200 and 300 shown in the reference Figures 1A to 1C The described electronic device 100 is similar, and the same components are in Figure 4 and Figure 5 The same labels were used in the previous section, so they will not be repeated here.

[0048] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. An electronic device, characterized in that, include: Antenna array, comprising multiple antenna elements; The photoelectric detection circuit includes multiple photoelectric detection units, each of which is configured one-to-one with a plurality of antenna units. A photonic integrated circuit for receiving optical signals from outside the electronic device; as well as Optical leads connect the photonic integrated circuit to each of the photodetector units and provide an optical path between the photonic integrated circuit and each of the photodetector units.

2. The electronic device according to claim 1, characterized in that, Also includes: The carrier plate has a first surface and a second surface opposite to the first surface, wherein the antenna array is disposed on the first surface and the photoelectric detection circuit is disposed on the second surface.

3. The electronic device according to claim 2, characterized in that, The photonic integrated circuit is disposed on the second surface of the carrier plate and is spaced apart from the plurality of photoelectric detection units.

4. The electronic device according to claim 2, characterized in that, The carrier plate includes a glass substrate, which has glass through holes that electrically connect the antenna unit to the corresponding photoelectric detection unit.

5. The electronic device according to claim 2, characterized in that, In the vertical direction from the first surface to the second surface, the antenna unit is configured one-to-one with the photoelectric detection unit.

6. The electronic device according to claim 5, characterized in that, The photonic integrated circuit and each of the photoelectric detection units substantially overlap in the horizontal direction.

7. The electronic device according to claim 2, characterized in that, The photonic integrated circuit is disposed in the central region of the carrier plate, and each photoelectric detection unit is disposed in the surrounding region of the carrier plate.

8. The electronic device according to claim 7, characterized in that, The plurality of photoelectric detection units surround the photonic integrated circuit.

9. The electronic device according to claim 4, characterized in that, The optical lead extends from the first surface of the photodetector unit facing away from the substrate to the first surface of the photonic integrated circuit facing away from the substrate.

10. The electronic device according to claim 9, characterized in that, The glass through-hole is connected to the second surface of the photoelectric detection unit facing the carrier plate.

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