Radio frequency power amplifier and radio frequency equipment

Abstract

The utility model provides a radio frequency power amplifier and radio frequency equipment, and relates to the technical field of radio frequency. According to the application, the radio frequency input end of the input matching network is used for externally connecting a radio frequency signal to be amplified, so that the two radio frequency output ends of the input matching network are respectively connected with one input end of the power amplification chip, and are externally connected with a first bias voltage signal through the power supply connection end via the input power supply bias network; meanwhile, two radio frequency input ends of the output matching network are respectively connected with one output end of the power amplification chip, and are externally connected with a second bias voltage signal through the power supply connection end via the output power supply bias network, and at the moment, the power amplification chip operates under the cooperative driving effect of the first bias voltage signal and the second bias voltage signal; the output matching network utilizes an output Balun impedance conversion structure based on a vertical single-hole magnetic ring to effectively offset heat loss generated when a high-power radio-frequency signal is transmitted, and outputs a target radio-frequency signal through a radio-frequency output end, so that the reliability of the amplifier is effectively improved.

Description

Technical Field

[0001] This application relates to the field of radio frequency (RF) technology, and more specifically, to an RF power amplifier and an RF device. Background Technology

[0002] With the continuous development of science and technology, radio frequency (RF) technology has been widely used in various industries (e.g., television, radio, mobile phones, radar, satellite positioning, automatic identification systems, etc.). In the practical application of RF technology, it is often necessary to use an RF power amplifier to amplify the received RF signal to a sufficiently large signal power to ensure that the final RF signal can meet the expected signal requirements.

[0003] It is worth noting that currently popular RF power amplifiers in the industry generally suffer from high power consumption in the VHF band (i.e., the 30MHz to 300MHz band). During the power amplification of low-frequency (i.e., the 100MHz and below band) RF signals, they are prone to insufficient signal output power and amplifier self-oscillation problems due to excessive amplifier power consumption. Utility Model Content

[0004] In view of this, the purpose of this application is to provide a radio frequency power amplifier and radio frequency device that can effectively offset the heat loss generated when transmitting high-power radio frequency signals by utilizing an output balun impedance transformation structure equipped with a vertical single-hole magnetic ring, thereby reducing the amplifier power consumption of the corresponding radio frequency power amplifier, so that the radio frequency power amplifier can avoid insufficient signal output power and amplifier self-oscillation problems as much as possible during the power amplification of low-frequency radio frequency signals, and improve the device reliability of the radio frequency power amplifier.

[0005] To achieve the above objectives, the technical solutions adopted in the embodiments of this application are as follows:

[0006] In a first aspect, this application provides a radio frequency power amplifier, which includes an input matching network, an output matching network, a power amplifier chip, an input power supply bias network, and an output power supply bias network, wherein the output matching network includes an output balun impedance transformation structure based on at least one vertical single-hole magnetic ring.

[0007] The input matching network has an externally amplified radio frequency signal at its radio frequency input terminal, and the two radio frequency output terminals of the input matching network are respectively connected to one input terminal of the power amplifier chip. The power supply connection terminal of the input matching network is connected to a first bias voltage signal via the input power supply bias network.

[0008] The two RF input terminals of the output matching network are respectively connected to one output terminal of the power amplifier chip. The power supply connection terminal of the output matching network is connected to a second bias voltage signal via the output power supply bias network. The RF output terminal of the output matching network outputs a target RF signal that has been impedance matched by the output balun impedance transformation structure. The first bias voltage signal and the second bias voltage signal work together to drive the power amplifier chip. The target RF signal is obtained by amplifying the RF signal to be amplified.

[0009] In an optional embodiment, the power amplifier chip includes two P-channel transistors;

[0010] The gates of the two P-channel transistors each serve as one input terminal of the power amplifier chip.

[0011] The drains of the two P-channel transistors each serve as one output terminal of the power amplifier chip, and the sources of the two P-channel transistors are connected to each other and grounded.

[0012] In an optional implementation, the input matching network includes an input balun impedance transformation structure and an input impedance matching circuit;

[0013] The balanced input terminal of the input balun impedance transformation structure serves as the radio frequency input terminal of the input matching network. The two unbalanced output terminals of the input balun impedance transformation structure are each connected to a signal input terminal of the input impedance matching circuit via a DC blocking capacitor. The input balun impedance transformation structure is used to perform a 4:1 impedance transformation on the received radio frequency signal to be amplified and to transmit the differential signal of the radio frequency signal to be amplified to the input impedance matching circuit.

[0014] The two signal output terminals of the input impedance matching circuit serve as one radio frequency output terminal of the input matching network, and the voltage receiving terminal of the input impedance matching circuit serves as the power supply connection terminal of the input matching network. The input impedance matching circuit is used to perform a 4:1 impedance transformation on the differential signal of the received radio frequency signal to be amplified. The first bias voltage signal provides the gate voltage to the power amplifier chip through the voltage receiving terminal and the two signal output terminals of the input impedance matching circuit.

[0015] In an optional implementation, the input balun impedance transformation structure is implemented using a first coaxial line that reuses a vertical single-hole magnetic ring with the output balun impedance transformation structure. The input impedance matching circuit includes two second coaxial lines that reuse a vertical single-hole magnetic ring with the output balun impedance transformation structure. The first coaxial line and the two second coaxial lines are all semi-flexible radio frequency coaxial lines.

[0016] The inner core of the balanced end of the first coaxial line serves as the balanced input end of the input balun impedance transformation structure, and the outer conductor of the balanced end of the first coaxial line is grounded.

[0017] The unbalanced inner core and unbalanced outer conductor of the first coaxial line serve as an unbalanced output terminal of the input balun impedance transformation structure, respectively.

[0018] The outer conductor of the balanced end of each of the second coaxial cables serves as a signal input terminal of the input impedance matching circuit, and the inner cores of the balanced ends of the two second coaxial cables are interconnected to serve as the voltage receiving terminals of the input impedance matching circuit.

[0019] The unbalanced inner core of each of the second coaxial cables is interconnected with the unbalanced outer conductor of the other second coaxial cable, serving as a signal output terminal of the input impedance matching circuit.

[0020] In an optional implementation, the output matching network further includes an output impedance matching circuit;

[0021] The two signal input terminals of the output impedance matching circuit serve as the two radio frequency input terminals of the output matching network, and the voltage receiving terminal of the output impedance matching circuit serves as the power supply connection terminal of the output matching network. The second bias voltage signal provides the drain voltage to the power amplifier chip through the voltage receiving terminal and the two signal input terminals of the output impedance matching circuit. The output impedance matching circuit is used to perform a 1:4 impedance transformation on the differential signal amplified by the power amplifier chip.

[0022] The two signal output terminals of the output impedance matching circuit are each connected to an unbalanced input terminal of the output balun impedance transformation structure via a DC blocking capacitor. The balanced output terminal of the output balun impedance transformation structure serves as the RF output terminal of the output matching network. The output balun impedance transformation structure is used to perform a 1:4 impedance transformation on the received differential signal and output the target RF signal that matches the impedance-transformed differential signal.

[0023] In an optional implementation, the output balun impedance transformation structure is implemented using a third coaxial line passing through the at least one vertical single-hole magnetic ring, and the output impedance matching circuit includes two fourth coaxial lines that reuse the vertical single-hole magnetic ring with the output balun impedance transformation structure, wherein the third coaxial line and the two fourth coaxial lines are semi-flexible radio frequency coaxial lines.

[0024] The unbalanced inner core of each of the fourth coaxial cables is interconnected with the unbalanced outer conductor of another fourth coaxial cable, serving as a signal input terminal of the output impedance matching circuit.

[0025] The outer conductor of the balanced end of each of the fourth coaxial cables serves as a signal output terminal of the output impedance matching circuit, and the inner cores of the balanced ends of the two fourth coaxial cables are interconnected to serve as voltage receiving terminals of the output impedance matching circuit.

[0026] The unbalanced inner core and unbalanced outer conductor of the third coaxial line serve as an unbalanced input terminal of the output balun impedance transformation structure, the balanced inner core of the third coaxial line serves as the balanced output terminal of the output balun impedance transformation structure, and the balanced outer conductor of the third coaxial line is grounded.

[0027] In an optional implementation, for each of the input power bias network and the output power bias network, the power bias network includes an RF choke inductor, a decoupling filter capacitor, and two chip power filter capacitors.

[0028] The first terminal of the RF choke inductor is externally connected to a corresponding bias voltage signal, the second terminal of the RF choke inductor is connected to the power supply connection terminal of the corresponding matching network, and the second terminal of the RF choke inductor is grounded through the decoupling filter capacitor.

[0029] The first end of the RF choke inductor is connected to one end of each of the two chip power supply filter capacitors, and the other end of each of the two chip power supply filter capacitors is grounded.

[0030] In an optional embodiment, the RF power amplifier further includes two RF filter circuits, wherein the RF filter circuits are formed by a first resistor and a first capacitor connected in series.

[0031] One end of each of the radio frequency filter circuits is connected to one input terminal of the power amplifier chip, and the other end of each of the radio frequency filter circuits is grounded.

[0032] In an optional embodiment, the radio frequency power amplifier further includes two power amplifier feedback circuits, wherein the power amplifier feedback circuits are formed by a second resistor and a second capacitor connected in series.

[0033] One end of each power amplifier feedback circuit is connected to one input terminal of the power amplifier chip, and the other end of each power amplifier feedback circuit is connected to one output terminal of the power amplifier chip; wherein the input and output terminals of the power amplifier chip connected to the same power amplifier feedback circuit have opposite signal polarities.

[0034] Secondly, this application provides a radio frequency device, the radio frequency device including at least one radio frequency power amplifier as described in any of the foregoing embodiments.

[0035] In this case, the beneficial effects of the embodiments of this application may include the following:

[0036] This application utilizes the input matching network to externally amplify the RF signal at its RF input terminal. The two RF output terminals of the input matching network are each connected to one input terminal of a power amplifier chip, and a first bias voltage signal is externally connected via an input power bias network through a power supply connection terminal. Simultaneously, the two RF input terminals of the output matching network are each connected to one output terminal of the power amplifier chip, and a second bias voltage signal is externally connected via an output power bias network through a power supply connection terminal. The power amplifier chip operates under the coordinated drive of the first and second bias voltage signals to amplify the received RF signal. The output balun impedance transformation structure, based on at least one vertical single-hole magnetic ring, within the output matching network, obtains the target RF signal through impedance matching, allowing the RF output terminal of the output matching network to output the target RF signal. This effectively offsets the heat loss generated during the transmission of high-power RF signals using the output balun impedance transformation structure equipped with a vertical single-hole magnetic ring, thereby reducing the amplifier power consumption of the corresponding RF power amplifier. This minimizes the problems of insufficient signal output power and amplifier self-oscillation during the power amplification of low-frequency RF signals, improving the device reliability of the RF power amplifier.

[0037] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0038] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0039] Figure 1 One of the circuit diagrams of the radio frequency power amplifier provided in the embodiments of this application;

[0040] Figure 2 A second schematic diagram of the circuit composition of the radio frequency power amplifier provided in the embodiments of this application;

[0041] Figure 3 The third schematic diagram of the circuit composition of the radio frequency power amplifier provided in the embodiments of this application;

[0042] Figure 4 This is a schematic diagram of the deployment of a radio frequency power amplifier on a printed circuit board, as provided in an embodiment of this application.

[0043] Icons: 10-RF power amplifier; 11-Input matching network; 12-Output matching network; 13-Power amplifier chip; 14-Input power supply bias network; 15-Output power supply bias network; 121-Output balun impedance transformation structure; 16-Vertical single-hole magnetic ring; 122-Output impedance matching circuit; 123-Third coaxial line; 124-Fourth coaxial line; 111-Input balun impedance transformation structure; 112-Input impedance matching circuit; 113-First coaxial line; 114-Second coaxial line; 131-P-channel transistor; 171-RF choke inductor; 172-Decoupling filter capacitor; 173-Chip power supply filter capacitor; 18-RF filter circuit; 181-First resistor; 182-First capacitor; 19-Power amplifier feedback circuit; 191-Second resistor; 192-Second capacitor; 101-DC blocking capacitor. Detailed Implementation

[0044] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0045] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0046] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0047] In the description of this application, it should be understood that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product is in use, or the orientation or positional relationship commonly understood by those skilled in the art. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the equipment or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. In addition, the terms "first," "second," and "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0048] It should also be noted that, in the description of this application, unless otherwise expressly specified or limited, the terms "disposed," "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; and they can refer to internal connections between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0049] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0050] Please refer to Figure 1 , Figure 1 This is one of the circuit configuration diagrams of the radio frequency power amplifier 10 provided in this application embodiment. In this application embodiment, the radio frequency power amplifier 10 is suitable for power amplification of high-power radio frequency signals in the VHF band or UHF (i.e., the 300MHz-3GHz band), and can effectively reduce its own power consumption during the power amplification of high-power radio frequency signals (especially low-frequency radio frequency signals) to minimize the occurrence of insufficient signal output power and amplifier self-oscillation problems, ensuring that the radio frequency power amplifier 10 has sufficiently strong device reliability.

[0051] In this embodiment, the RF power amplifier 10 may include an input matching network 11, an output matching network 12, a power amplifier chip 13, an input power supply bias network 14, and an output power supply bias network 15. The output matching network 12 includes an output balun impedance transformation structure 121 based on at least one vertical single-hole magnetic ring 16. The greater the RF signal power amplification required by the RF power amplifier 10, the more vertical single-hole magnetic rings 16 are required for the corresponding output balun impedance transformation structure 121. The vertical single-hole magnetic ring 16 is a single-hole magnetic ring that stands upright on the printed circuit board where the RF power amplifier 10 is located. The power amplifier chip 13 may be implemented using a gallium nitride power amplifier chip based on two P-channel transistors (e.g., a P-channel depletion-mode MOSFET, a P-channel enhancement-mode MOSFET, etc.).

[0052] In this embodiment of the application, the radio frequency input terminal of the input matching network 11 (i.e. Figure 1 The RFI terminal in the middle receives and amplifies the radio frequency signal (i.e., Figure 1 The RFIN signal in the input matching network 11, and the two RF outputs (i.e., Figure 1 The RFO1 and RFO2 terminals are respectively connected to one input terminal of the power amplifier chip 13 (i.e., ...). Figure 1The In1 and In2 terminals of the input matching network 11, i.e., the power supply connection terminals of the input matching network 11 (i.e., the In1 and In2 terminals of the input matching network 11) Figure 1 The Pc terminal of the input matching network 11 is connected to the first bias voltage signal (i.e., ...) via the input power supply bias network 14. Figure 1 (VG signal in the middle).

[0053] The input matching network 11 has its RFO1 terminal connected to the In1 terminal of the power amplifier chip 13, and its RFO2 terminal connected to the In2 terminal of the power amplifier chip 13. The input matching network 11 performs multiple impedance matching on the received RF signal to be amplified and transmits the differential signal corresponding to the impedance-matched RF signal to the power amplifier chip 13. The first bias voltage signal provides a driving voltage to the power amplifier chip 13 via the input matching network 11 to control the conduction or cutoff of the crystal amplifier tube inside the power amplifier chip 13, ensuring that the power amplifier chip 13 can amplify the received RF signal (i.e., the differential signal of the RF signal to be amplified). The input power supply bias network 14 implements an open-circuit function and a DC short-circuit function to prevent the RF signal processed by the input matching network 11 from flowing into the DC power supply providing the first bias voltage signal, while ensuring that the first bias voltage signal provided by the DC power supply can be normally transmitted to the power amplifier chip 13.

[0054] In this embodiment of the application, the two radio frequency input terminals of the output matching network 12 (i.e. Figure 1 The RFI1 and RFI2 terminals are respectively connected to one output terminal of the power amplifier chip 13 (i.e., ...). Figure 1 The power supply connection terminals of the output matching network 12 (i.e., the Out1 and Out2 terminals) are located in the network. Figure 1 The Pc terminal of the output matching network 12 in the middle is connected to the second bias voltage signal (i.e., the output power supply bias network 15) via the output power supply bias network 15. Figure 1 The VD signal in the output, the RF output terminal of the output matching network 12 (i.e., Figure 1 The RFO terminal outputs the target radio frequency signal (i.e., the amplified radio frequency signal obtained from the radio frequency signal to be amplified) to the outside. Figure 1 (RFOUT signal in the middle).

[0055] The output matching network 12 has its RFI1 terminal connected to the Out1 terminal of the power amplifier chip 13, and its RFI2 terminal connected to the Out2 terminal of the power amplifier chip 13. The Out1 terminal and In1 terminal of the power amplifier chip 13 have opposite signal polarities, and the Out2 terminal and In2 terminal have opposite signal polarities. The output matching network 12 performs multiple impedance matching on the received differential signal amplified by the power amplifier chip 13 and synthesizes the impedance-matched differential signal into the target RF signal. During the multiple impedance matching operation, the output matching network 12 utilizes at least one vertical single-hole magnetic ring 16 used in the output balun impedance transformation structure 121 to offset the heat loss generated during the transmission of high-power RF signals, thereby reducing the amplifier power consumption of the corresponding RF power amplifier 10. This ensures that the output power of the target RF signal reaches the desired power level, avoiding amplifier self-oscillation and minimizing signal output power and amplifier self-oscillation issues during the power amplification of low-frequency RF signals.

[0056] The second bias voltage signal provides a driving voltage to the power amplifier chip 13 via the output matching network 12, which, in conjunction with the first bias voltage signal, forms an RF signal amplification path within the power amplifier chip 13, ensuring that the power amplifier chip 13 can perform power amplification processing on the received RF signal (i.e., the differential signal of the RF signal to be amplified). The output power supply bias network 15 is used to implement the RF signal open-circuit function and DC short-circuit function to prevent the RF signal processed by the output matching network 12 from flowing into the DC power supply that provides the second bias voltage signal, while ensuring that the second bias voltage signal provided by the DC power supply can be normally transmitted to the power amplifier chip 13.

[0057] Therefore, the RF power amplifier 10 provided in this application embodiment can effectively offset the heat loss generated when transmitting high-power RF signals by utilizing the output balun impedance transformation structure 121 equipped with a vertical single-hole magnetic ring 16, thereby reducing the amplifier power consumption of the corresponding RF power amplifier 10. This allows the RF power amplifier 10 to avoid insufficient signal output power and amplifier self-oscillation problems as much as possible during the power amplification process of low-frequency RF signals, thus improving the device reliability of the RF power amplifier 10.

[0058] Optionally, in this embodiment, the power amplifier chip 13 may include two P-channel transistors 131. The gates of each of the two P-channel transistors 131 serve as input terminals of the power amplifier chip 13, and the drains of each serve as output terminals of the power amplifier chip 13. The sources of each of the two P-channel transistors 131 are interconnected and grounded. Therefore, the first bias voltage signal can essentially provide gate voltages to the two P-channel transistors 131 in the power amplifier chip 13, and the signal amplification factor of the corresponding P-channel transistor 131 can be adjusted by adjusting the magnitude of the gate voltages; the second bias voltage signal can essentially provide drain voltages to the two P-channel transistors 131 in the power amplifier chip 13.

[0059] Optionally, in this embodiment of the application, the input matching network 11 may include an input balun impedance transformation structure 111 and an input impedance matching circuit 112, wherein the input balun impedance transformation structure 111 may be implemented using a coaxial balun, an LC balun, or a microstrip balun, and the input impedance matching circuit 112 may also be implemented based on a coaxial balun, an LC balun, or a microstrip balun.

[0060] Wherein, the balanced input terminal of the input balun impedance transformation structure 111 (i.e. Figure 1 The Bi terminal in the input matching network 11 serves as the RF input terminal of the input balun impedance transformation structure 111, and the two unbalanced output terminals (i.e., the Bi terminal in the input matching network 11) are the two unbalanced output terminals of the input balun impedance transformation structure 111. Figure 1 The IBo1 and IBo2 terminals are each connected individually to one signal input terminal of the input impedance matching circuit 112 via DC blocking capacitor 101. Figure 1 The input impedance matching circuit 112 includes terminals Si1 and Si2. The input balun impedance transformation structure 111 performs a 4:1 impedance transformation on the received RF signal to be amplified and transmits the differential signal of the RF signal to the input impedance matching circuit 112. Terminal IBo1 of the input balun impedance transformation structure 111 is connected to terminal Si1 of the input impedance matching circuit 112, and terminal IBo2 of the input balun impedance transformation structure 111 is connected to terminal Si2 of the input impedance matching circuit 112. The DC blocking capacitor 101 blocks external DC signals but still enables RF signal transmission.

[0061] The two signal output terminals of the input impedance matching circuit 112 (i.e. Figure 1 The So1 and So2 terminals of the input impedance matching circuit 112 are respectively used as one RF output terminal of the input matching network 11, and the voltage receiving terminal of the input impedance matching circuit 112 (i.e., Figure 1 The Vr terminal of the input impedance matching circuit 112 is used as the power supply connection terminal of the input matching network 11. The input impedance matching circuit 112 is used to perform a 4:1 impedance transformation on the differential signal of the received radio frequency signal to be amplified. The first bias voltage signal provides the gate voltage to the power amplifier chip 13 through the voltage receiving terminal and two signal output terminals of the input impedance matching circuit 112.

[0062] Optionally, in one embodiment of this example, the input balun impedance transformation structure 111 and the input impedance matching circuit 112 can be constructed by multiplexing the coaxial balun of the vertical single-hole magnetic ring 16 with the output balun impedance transformation structure 121. This reduces the circuit board area required for the RF power amplifier 10, lowers the manufacturing cost of the RF power amplifier 10, and improves the assembly efficiency of the RF power amplifier 10. In this case, the input balun impedance transformation structure 111 is implemented using a first coaxial line 113 multiplexed with the vertical single-hole magnetic ring 16 with the output balun impedance transformation structure 121. The input impedance matching circuit 112 includes two second coaxial lines 114 multiplexed with the vertical single-hole magnetic ring 16 with the output balun impedance transformation structure 121. The first coaxial line 113 and the two second coaxial lines 114 are all semi-flexible RF coaxial lines, so as to utilize the foldability of the semi-flexible RF coaxial lines to achieve the desired impedance transformation function without occupying circuit board area.

[0063] In this configuration, the inner core of the balanced end of the first coaxial line 113 serves as the balanced input end of the input balun impedance transformation structure 111, the outer conductor of the balanced end of the first coaxial line 113 is grounded, and the inner core and outer conductor of the unbalanced end of the first coaxial line 113 serve as an unbalanced output end of the input balun impedance transformation structure 111, so that the first coaxial line 113 can reuse the vertical single-hole magnetic ring 16 to perform impedance transformation on the system impedance (e.g., 50Ω) of the RF system where the RF power amplifier 10 is located at a ratio of 4:1.

[0064] The balanced outer conductor of each of the second coaxial cables 114 serves as a signal input terminal of the input impedance matching circuit 112. The balanced inner cores of the two second coaxial cables 114 are interconnected and serve as voltage receiving terminals of the input impedance matching circuit 112. The unbalanced inner core of each of the second coaxial cables 114 is interconnected with the unbalanced outer conductor of the other second coaxial cable 114 and serves as a signal output terminal of the input impedance matching circuit 112. The two second coaxial cables 114 can reuse the vertical single-hole magnetic ring 16 to perform a 4:1 impedance transformation.

[0065] Optionally, in this embodiment, the output matching network 12 may further include an output impedance matching circuit 122. The output impedance matching circuit 122 may be implemented based on a coaxial line balun, an LC balun, or a microstrip line balun, and the output balun impedance transformation structure 121 may be implemented using a coaxial line balun.

[0066] Among them, the two signal input terminals of the output impedance matching circuit 122 (i.e. Figure 1 The Si1 and Si2 terminals of the output impedance matching circuit 122 are respectively used as the two RF input terminals of the output matching network 12, and the voltage receiving terminal of the output impedance matching circuit 122 (i.e., Figure 1 The Vr terminal of the output impedance matching circuit 122 is used as the power supply connection terminal of the output matching network 12. The second bias voltage signal provides the drain voltage to the power amplifier chip 13 through the voltage receiving terminal and two signal input terminals of the output impedance matching circuit 122. The output impedance matching circuit 122 is used to perform a 1:4 impedance transformation on the differential signal amplified by the power amplifier chip 13.

[0067] The two signal output terminals of the output impedance matching circuit 122 (i.e. Figure 1 The So1 and So2 terminals of the output impedance matching circuit 122 are respectively connected to an unbalanced input terminal of the output balun impedance transformation structure 121 via DC blocking capacitor 101. Figure 1 The IBi1 and IBi2 terminals of the output balun impedance transformation structure 121, i.e., the balanced output terminals (i.e., the output terminals of the output balun impedance transformation structure 121) Figure 1 The IBi1 terminal of the output balun impedance transformation structure 121 serves as the RF output terminal of the output matching network 12. The output balun impedance transformation structure 121 performs a 1:4 impedance transformation on the received differential signal and outputs the target RF signal that matches the impedance-transformed differential signal. Specifically, the IBi1 terminal of the output balun impedance transformation structure 121 is connected to the So1 terminal of the output impedance matching circuit 122, and the IBi2 terminal of the output balun impedance transformation structure 121 is connected to the So2 terminal of the output impedance matching circuit 122.

[0068] Optionally, in one embodiment of this invention, the output impedance matching circuit 122 can be constructed by multiplexing the coaxial balun of the vertical single-hole magnetic ring 16 with the output balun impedance transformation structure 121, thereby reducing the circuit board area required for the RF power amplifier 10, lowering the manufacturing cost of the RF power amplifier 10, and improving the assembly efficiency of the RF power amplifier 10. In this case, the output balun impedance transformation structure 121 is implemented using a third coaxial line 123 that passes through at least one vertical single-hole magnetic ring 16, and the output impedance matching circuit 122 is implemented using two fourth coaxial lines 124 that multiplex the vertical single-hole magnetic ring 16 with the output balun impedance transformation structure 121. The third coaxial line 123 and the two fourth coaxial lines 124 are all semi-flexible RF coaxial lines, utilizing the foldability of the semi-flexible RF coaxial lines to achieve the desired impedance transformation function without occupying circuit board area.

[0069] The unbalanced inner core of each of the fourth coaxial cables 124 is interconnected with the unbalanced outer conductor of another fourth coaxial cable 124, serving as a signal input terminal of the output impedance matching circuit 122. The balanced outer conductor of each of the fourth coaxial cables 124 serves as a signal output terminal of the output impedance matching circuit 122. The balanced inner cores of the two fourth coaxial cables 124 are interconnected, serving as the voltage receiving terminal of the output impedance matching circuit 122. The two fourth coaxial cables 124 can reuse the vertical single-hole magnetic ring 16 to perform a 1:4 impedance transformation.

[0070] The unbalanced inner core and unbalanced outer conductor of the third coaxial line 123 serve as an unbalanced input terminal of the output balun impedance transformation structure 121, and the balanced inner core of the third coaxial line 123 serves as the balanced output terminal of the output balun impedance transformation structure 121. The balanced outer conductor of the third coaxial line 123 is grounded so that the third coaxial line 123 can be impedance transformed to the system impedance of the RF system where the RF power amplifier 10 is located based on the vertical single-hole magnetic ring 16 at a ratio of 1:4.

[0071] Optionally, in this embodiment of the application, for each of the input power bias network 14 and the output power bias network 15, the power bias network includes an RF choke inductor 171, a decoupling filter capacitor 172, and two chip power filter capacitors 173.

[0072] The first end of the RF choke inductor 171 is externally connected to the corresponding bias voltage signal, the second end of the RF choke inductor 171 is connected to the power supply connection terminal of the corresponding matching network, and the second end of the RF choke inductor 171 is grounded through the decoupling filter capacitor 172. At this time, the RF choke inductor 171 and the decoupling filter capacitor 172 form an LC filter circuit, so that the corresponding bias voltage signal can act on the power amplifier chip 13 and prevent the RF signal processed by the corresponding matching network from flowing into the DC power supply.

[0073] The first end of the RF choke inductor 171 is connected to one end of each of the two chip power supply filter capacitors 173, and the other end of each of the two chip power supply filter capacitors 173 is grounded to reduce the interference of the corresponding DC power supply to the power amplifier chip 13.

[0074] Alternatively, please refer to Figure 2 , Figure 2 This is a second schematic diagram of the circuit composition of the radio frequency power amplifier 10 provided in this application embodiment. In this application embodiment, with Figure 1 Compared to the radio frequency power amplifier 10 shown, Figure 2 The RF power amplifier 10 shown may also include two RF filter circuits 18 to effectively enhance the stability of the power amplifier chip 13 and effectively improve the in-band ripple problem of the power amplifier chip 13 in the 100MHz to 600MHz frequency band.

[0075] In this embodiment, the radio frequency filter circuit 18 is formed by a first resistor 181 and a first capacitor 182 connected in series; one end of each radio frequency filter circuit 18 is connected to one input terminal of the power amplifier chip 13, and the other end of each radio frequency filter circuit 18 is grounded.

[0076] Alternatively, please refer to Figure 3 , Figure 3 This is a second schematic diagram of the circuit composition of the radio frequency power amplifier 10 provided in this application embodiment. In this application embodiment, with Figure 2 Compared to the RF power amplifier 10 shown, Figure 3 The RF power amplifier 10 shown may also include two power amplifier feedback circuits 19 to effectively enhance the stability of the power amplifier chip 13 and effectively improve the RF input reflection coefficient S11 of the power amplifier chip 13 in the 100MHz to 600MHz frequency band.

[0077] In this embodiment, each power amplifier feedback circuit 19 can be formed by connecting a second resistor 191 and a second capacitor 192 in series; one end of each power amplifier feedback circuit 19 is connected to one input terminal of the power amplifier chip 13, and the other end of each power amplifier feedback circuit 19 is connected to one output terminal of the power amplifier chip 13; wherein, the input and output terminals of the power amplifier chip 13 connected to the same power amplifier feedback circuit 19 have opposite signal polarities, so that the corresponding power amplifier feedback circuit 19 serves as a negative feedback circuit of the power amplifier chip 13, thereby improving the stability of the power amplifier chip 13.

[0078] Understandably, please refer to Figure 4 When the input balun impedance transformation structure 111, the input impedance matching circuit 112, the output impedance matching circuit 122, and the output balun impedance transformation structure 121 are implemented using a semi-flexible RF coaxial line with a multiplexed vertical single-hole magnetic ring 16, the printed circuit board area required for the RF power amplifier 10 can be significantly reduced, the manufacturing cost of the RF power amplifier 10 can be reduced, and the assembly efficiency of the RF power amplifier 10 can be improved. This application can achieve this by tightly attaching the vertical single-hole magnetic ring 16 to the corresponding heat dissipation structure on the printed circuit board (e.g., ...). Figure 4 The method of using heat dissipation holes in the RF power amplifier 10 facilitates heat conduction and improves the operational reliability of the RF power amplifier 10.

[0079] Furthermore, this application provides a radio frequency (RF) device, which may include at least one of the aforementioned RF power amplifiers 10. The RF power amplifier 10 amplifies the received RF signal, enabling the amplified RF signal to reach a desired power level. The RF device may be, but is not limited to, an RF transmitter, an RF receiver, or an RF signal processing device.

[0080] The above descriptions are merely various embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A radio frequency power amplifier, characterized in that, The radio frequency power amplifier includes an input matching network, an output matching network, a power amplifier chip, an input power supply bias network, and an output power supply bias network, wherein the output matching network includes an output balun impedance transformation structure based on at least one vertical single-hole magnetic ring. The input matching network has an externally amplified radio frequency signal at its radio frequency input terminal, and the two radio frequency output terminals of the input matching network are respectively connected to one input terminal of the power amplifier chip. The power supply connection terminal of the input matching network is connected to a first bias voltage signal via the input power supply bias network. The two RF input terminals of the output matching network are respectively connected to one output terminal of the power amplifier chip. The power supply connection terminal of the output matching network is connected to a second bias voltage signal via the output power supply bias network. The RF output terminal of the output matching network outputs a target RF signal that has been impedance matched by the output balun impedance transformation structure. The first bias voltage signal and the second bias voltage signal work together to drive the power amplifier chip. The target RF signal is obtained by amplifying the RF signal to be amplified.

2. The radio frequency power amplifier according to claim 1, characterized in that, The power amplifier chip includes two P-channel transistors. The gates of the two P-channel transistors each serve as one input terminal of the power amplifier chip. The drains of the two P-channel transistors each serve as one output terminal of the power amplifier chip, and the sources of the two P-channel transistors are connected to each other and grounded.

3. The radio frequency power amplifier according to claim 2, characterized in that, The input matching network includes an input balun impedance transformation structure and an input impedance matching circuit; The balanced input terminal of the input balun impedance transformation structure serves as the radio frequency input terminal of the input matching network. The two unbalanced output terminals of the input balun impedance transformation structure are each connected to a signal input terminal of the input impedance matching circuit via a DC blocking capacitor. The input balun impedance transformation structure is used to perform a 4:1 impedance transformation on the received radio frequency signal to be amplified and to transmit the differential signal of the radio frequency signal to be amplified to the input impedance matching circuit. The two signal output terminals of the input impedance matching circuit serve as one radio frequency output terminal of the input matching network, and the voltage receiving terminal of the input impedance matching circuit serves as the power supply connection terminal of the input matching network. The input impedance matching circuit is used to perform a 4:1 impedance transformation on the differential signal of the received radio frequency signal to be amplified. The first bias voltage signal provides the gate voltage to the power amplifier chip through the voltage receiving terminal and the two signal output terminals of the input impedance matching circuit.

4. The radio frequency power amplifier according to claim 3, characterized in that, The input balun impedance transformation structure is implemented using a first coaxial line that reuses a vertical single-hole magnetic ring with the output balun impedance transformation structure. The input impedance matching circuit includes two second coaxial lines that reuse a vertical single-hole magnetic ring with the output balun impedance transformation structure. The first coaxial line and the two second coaxial lines are all semi-flexible radio frequency coaxial lines. The inner core of the balanced end of the first coaxial line serves as the balanced input end of the input balun impedance transformation structure, and the outer conductor of the balanced end of the first coaxial line is grounded. The unbalanced inner core and unbalanced outer conductor of the first coaxial line serve as an unbalanced output terminal of the input balun impedance transformation structure, respectively. The outer conductor of the balanced end of each of the second coaxial cables serves as a signal input terminal of the input impedance matching circuit, and the inner cores of the balanced ends of the two second coaxial cables are interconnected to serve as the voltage receiving terminals of the input impedance matching circuit. The unbalanced inner core of each of the second coaxial cables is interconnected with the unbalanced outer conductor of the other second coaxial cable, serving as a signal output terminal of the input impedance matching circuit.

5. The radio frequency power amplifier according to claim 2, characterized in that, The output matching network also includes an output impedance matching circuit; The two signal input terminals of the output impedance matching circuit serve as the two radio frequency input terminals of the output matching network, and the voltage receiving terminal of the output impedance matching circuit serves as the power supply connection terminal of the output matching network. The second bias voltage signal provides the drain voltage to the power amplifier chip through the voltage receiving terminal and the two signal input terminals of the output impedance matching circuit. The output impedance matching circuit is used to perform a 1:4 impedance transformation on the differential signal amplified by the power amplifier chip. The two signal output terminals of the output impedance matching circuit are each connected to an unbalanced input terminal of the output balun impedance transformation structure via a DC blocking capacitor. The balanced output terminal of the output balun impedance transformation structure serves as the RF output terminal of the output matching network. The output balun impedance transformation structure is used to perform a 1:4 impedance transformation on the received differential signal and output the target RF signal that matches the impedance-transformed differential signal.

6. The radio frequency power amplifier according to claim 5, characterized in that, The output balun impedance transformation structure is implemented by a third coaxial line passing through the at least one vertical single-hole magnetic ring. The output impedance matching circuit includes two fourth coaxial lines that reuse the vertical single-hole magnetic ring with the output balun impedance transformation structure. The third coaxial line and the two fourth coaxial lines are all semi-flexible radio frequency coaxial lines. The unbalanced inner core of each of the fourth coaxial cables is interconnected with the unbalanced outer conductor of another fourth coaxial cable, serving as a signal input terminal of the output impedance matching circuit. The outer conductor of the balanced end of each of the fourth coaxial cables serves as a signal output terminal of the output impedance matching circuit, and the inner cores of the balanced ends of the two fourth coaxial cables are interconnected to serve as voltage receiving terminals of the output impedance matching circuit. The unbalanced inner core and unbalanced outer conductor of the third coaxial line serve as an unbalanced input terminal of the output balun impedance transformation structure, the balanced inner core of the third coaxial line serves as the balanced output terminal of the output balun impedance transformation structure, and the balanced outer conductor of the third coaxial line is grounded.

7. The radio frequency power amplifier according to claim 1, characterized in that, For each of the input power supply bias network and the output power supply bias network, the power supply bias network includes an RF choke inductor, a decoupling filter capacitor, and two chip power supply filter capacitors; The first terminal of the RF choke inductor is externally connected to a corresponding bias voltage signal, the second terminal of the RF choke inductor is connected to the power supply connection terminal of the corresponding matching network, and the second terminal of the RF choke inductor is grounded through the decoupling filter capacitor. The first end of the RF choke inductor is connected to one end of each of the two chip power supply filter capacitors, and the other end of each of the two chip power supply filter capacitors is grounded.

8. The radio frequency power amplifier according to any one of claims 1-7, characterized in that, The radio frequency power amplifier also includes two radio frequency filter circuits, wherein the radio frequency filter circuits are formed by a first resistor and a first capacitor connected in series. One end of each of the radio frequency filter circuits is connected to one input terminal of the power amplifier chip, and the other end of each of the radio frequency filter circuits is grounded.

9. The radio frequency power amplifier according to claim 8, characterized in that, The radio frequency power amplifier also includes two power amplifier feedback circuits, wherein the power amplifier feedback circuit is formed by a second resistor and a second capacitor connected in series. One end of each power amplifier feedback circuit is connected to one input terminal of the power amplifier chip, and the other end of each power amplifier feedback circuit is connected to one output terminal of the power amplifier chip; wherein the input and output terminals of the power amplifier chip connected to the same power amplifier feedback circuit have opposite signal polarities.

10. A radio frequency device, characterized in that, The radio frequency device includes at least one radio frequency power amplifier as described in any one of claims 1-9.

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