Quartz plate and chemical vapor deposition equipment
By designing an integrated quartz plate support and limiting structure, the problem of quartz plate deformation at high temperatures is solved, avoiding contact with the wafer or reflector, and ensuring wafer temperature uniformity and deposition effect.
Patent Information
- Application Number
- CN202422906801.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-27
- Publication Date
- 2025-10-31
- Estimated Expiration
- 2034-11-27
AI Technical Summary
During chemical vapor deposition, the quartz plate may deform due to thermal stress concentration at high temperatures, potentially coming into contact with the wafer or reflector, causing structural damage and affecting wafer temperature uniformity and deposition results.
Design a quartz plate, including a plate body and a support extending circumferentially along the edge. The support is integrally formed with the plate body and is set above the reflector to avoid thermal stress concentration. The support is also designed to prevent displacement and warping of the quartz plate through limiting holes and limiting pins.
This effectively prevents the quartz plate from deforming at high temperatures, avoids contact with the wafer or reflector, ensures wafer temperature uniformity, and improves deposition results.
Smart Images
Figure CN223496618U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of semiconductor process equipment technology, and more specifically relates to a quartz plate and a chemical vapor deposition equipment. Background Technology
[0002] Chemical vapor deposition (CVD) is a process that utilizes gaseous substances to generate chemical and transport reactions on a solid surface, producing a solid deposit. The process includes: forming volatile substances, transferring these substances to the deposition area, and then reacting them on the solid surface to produce a solid deposit. High-intensity tungsten or halogen lamps are used as a radiant heat source to heat the wafer. A reflector reflects the heat radiation emitted by the wafer back to it, ensuring uniform temperature during the reaction. However, the formation and deposition of volatile substances can generate particulate contaminants that contaminate the lower reflector, reducing the reflected heat radiation and causing uneven temperature distribution on the wafer, ultimately affecting the deposition effect. Currently, existing technologies typically involve adding a quartz plate between the wafer and the reflector to protect the reflector from contamination, thereby ensuring and improving the final wafer deposition effect. However, the quartz plate is supported by bolts and fixed at intervals above the reflector. During the deposition process, thermal stress concentrates at the bolts under high temperature, and the quartz plate is prone to deformation due to heat. In particular, at a process temperature of 1200 degrees Celsius, the maximum normal deformation of the quartz plate is about 300 μm, which may cause it to come into contact with the wafer or reflector, resulting in damage to the wafer and reflector structure. Utility Model Content
[0003] Based on the technical problems existing in the prior art, this utility model provides a quartz plate and a chemical vapor deposition equipment, aiming to solve the technical problem that thermal stress concentration occurs at the bolts under high temperature during the deposition process, and the quartz plate deforms due to heat.
[0004] To achieve the above objectives, according to a first aspect of the present invention, a quartz plate is provided, comprising a plate body and a support portion extending circumferentially along the edge of the plate body. The support portion is disposed below the plate body and abuts against the upper surface of a reflector plate, such that the plate body is spaced apart above the reflector plate. The plate body and the support portion are integrally formed.
[0005] Optionally, the quartz plate also includes two limiting holes and two limiting pins. The limiting holes are located on the plate body, and the limiting pins are inserted into the limiting holes. The two limiting holes and the two limiting pins are set in a one-to-one correspondence.
[0006] Optionally, the limiting pins are spaced apart from the wafer.
[0007] Optionally, the limiting hole and the limiting pin are fitted with a clearance.
[0008] Optionally, the limiting hole can be circular, elliptical, or polygonal.
[0009] Optionally, the support includes a plurality of protrusions distributed circumferentially along the plate.
[0010] Optionally, multiple bumps are spaced apart and evenly distributed.
[0011] Optionally, the transverse cross-section of the bump is arc-shaped.
[0012] Optionally, the support includes a protrusion, which is in the form of a ring.
[0013] According to a second aspect of the present invention, a chemical vapor deposition apparatus is provided, comprising a quartz plate as described in any of the above embodiments.
[0014] Compared with the prior art, the advantages of the quartz plate and chemical vapor deposition equipment provided by this utility model are as follows:
[0015] The present invention provides a quartz plate, which has a support portion provided below the edge of the plate body. The support portion supports the plate body and allows it to be spaced above a reflector plate. The plate body and the support portion are integrally formed, thereby avoiding thermal stress concentration and deformation of the quartz plate under high temperature environment. This prevents the quartz plate body from contacting the wafer or reflector plate, which could cause damage to the wafer or reflector plate structure. At the same time, since the support portion is located at the edge of the plate body, it also avoids obstructing the reflective function of the reflector plate, thereby ensuring the temperature uniformity of the wafer and improving the process effect. Attached Figure Description
[0016] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0017] Figure 1 This is a schematic diagram showing the positional relationship between the quartz plate, the edge ring, and the reflector according to this utility model;
[0018] Figure 2 This is a schematic diagram illustrating the positional relationship between the wafer and the edge ring according to this utility model;
[0019] Figure 3 This is a schematic diagram of the assembly structure of the quartz plate according to this utility model;
[0020] Figure 4 This is a partial schematic diagram of the assembly structure of the quartz plate according to this utility model;
[0021] Figure 5 The top view of the quartz plate according to this utility model shows that the central angle of the protrusion is 30° and the number of protrusions is 2.
[0022] Figure 6 The top view of the quartz plate according to this utility model shows that the central angle of the protrusion is 45° and the number of protrusions is 2.
[0023] Figure 7 The top view of the quartz plate according to this utility model shows that the central angle of the protrusion is 60° and the number of protrusions is 2.
[0024] Figure 8 The top view of the quartz plate according to this utility model shows that the central angle of the protrusion is 30° and the number of protrusions is 3.
[0025] Figure 9 The top view of the quartz plate according to this utility model shows that the central angle of the protrusion is 45° and the number of protrusions is 3.
[0026] Figure 10 The top view of the quartz plate according to this utility model shows that the central angle of the protrusion is 60° and the number of protrusions is 3.
[0027] Figure 11 The top view of the quartz plate according to this utility model shows that the central angle of the protrusion is 30° and the number of protrusions is 4.
[0028] Figure 12 The top view of the quartz plate according to this utility model shows that the central angle of the protrusion is 45° and the number of protrusions is 4.
[0029] Figure 13 The top view of the quartz plate according to this utility model shows that the central angle of the protrusion is 60° and the number of protrusions is 4.
[0030] Figure 14 The top view of the quartz plate according to this utility model shows that the support part is integrally ring-shaped;
[0031] Figure 15 The front view of the quartz plate according to this utility model shows that the support part is integrally ring-shaped.
[0032] The details of the reference numerals used in the above figures are as follows:
[0033] 10. Wafer; 20. Edge ring; 30. Reflector;
[0034] 40. Quartz slab;
[0035] 401. Plate body;
[0036] 402, Support; 4021, Protrusion;
[0037] 403. Limiting hole. Detailed Implementation
[0038] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this utility model, and should not be construed as limiting this utility model.
[0039] In the description of this utility model, it should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.
[0040] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this utility model, "a plurality of" means two or more, unless otherwise explicitly specified.
[0041] In this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.
[0042] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments.
[0043] Please see Figures 1 to 4In the reaction chamber of a chemical vapor deposition apparatus, a wafer 10 is disposed on an edge ring 20, which supports the wafer 10 and positions it at the process location. A reflector 30 is disposed below the wafer 10, with a certain distance between the reflector 30 and the wafer 10. Some embodiments of this invention provide a quartz plate 40 disposed between the wafer 10 and the reflector 30, spaced apart from the wafer 10. The quartz plate 40 includes a plate body 401 and a support portion 402 extending circumferentially along the edge of the plate body 401. The support portion 402 is disposed below the plate body 401 and abuts against the upper surface of the reflector 30, such that the plate body 401 is spaced above the reflector 30. The plate body 401 and the support portion 402 are integrally formed. The support part 402 is used to abut against the reflector 30 and protrudes from the lower surface of the plate body 401, so that the lower surface of the plate body 401 and the upper surface of the reflector 30 are spaced apart. The plate body 401 can be a circular plate, a rectangular plate or other polygonal plate. In this embodiment, the plate body 401 is a circular plate as an example.
[0044] The quartz plate provided by the above-mentioned technical solution of the present invention has a support portion 402 provided below the edge of the plate body 401. The support portion 402 supports the plate body 401, so that the plate body 401 is spaced above the reflector plate 30. The plate body 401 and the support portion 402 are integrally formed, thereby avoiding the deformation of the quartz plate due to thermal stress concentration under high temperature environment, and avoiding the contact between the plate body 401 of the quartz plate 40 and the wafer 10 or the reflector plate 30, which would cause structural damage to the wafer 10 or the reflector plate 30. At the same time, since the support portion 402 is provided at the edge of the plate body 401, it can also avoid the support portion 402 from obstructing the reflection function of the reflector plate 30, thereby ensuring the temperature uniformity of the wafer and improving the process effect.
[0045] See Figure 3 , Figures 5 to 15 As shown, in some embodiments, the quartz plate 40 further includes two limiting holes 403 and two limiting pins (not shown in the figure). The limiting holes 403 are located on the plate body 401, and the limiting pins are inserted into the limiting holes 403. The two limiting holes 403 and the two limiting pins are arranged in a one-to-one correspondence. With this arrangement, the two limiting pins are inserted into the two limiting holes 403 located at different positions, preventing excessive horizontal displacement of the plate body 401 of the quartz plate 40. In this embodiment, two limiting holes 403 are provided on the plate body 401, and the angle between the two limiting holes 403 and the line connecting them to the center of the plate body 401 is 90 degrees, ensuring that the quartz plate 40 will not detach laterally or rotate horizontally when heated. Of course, the two limiting holes 403 can be located at other positions on the plate body 401, which is not limited here.
[0046] In some embodiments, the limiting pin is spaced apart from the wafer 10. As described above, the limiting pin is located below the wafer 10, and the lower surface of the wafer 10 does not contact the top of the limiting pin, so as to avoid damage to the wafer 10 caused by contact between the limiting pin and the wafer.
[0047] In some embodiments, the limiting hole 403 and the limiting pin are in clearance fit. As configured above, there is a certain gap between the limiting pin and the inner wall of the limiting hole 403 to allow the limiting pin to be inserted.
[0048] See Figure 3 , Figures 5 to 15 As shown, in some embodiments, the limiting hole 403 is circular, elliptical, or polygonal, preferably circular, to facilitate manufacturing.
[0049] See Figures 5 to 13 As shown, in some embodiments, the support portion 402 includes a plurality of protrusions 4021 distributed circumferentially along the plate 401. As described above, a plurality of protrusions 4021 are provided on the lower surface of the plate 401, and the protrusions 4021 serve to support the plate 401. By distributing the plurality of protrusions 4021 circumferentially and placing the protrusions 4021 on the upper surface of the reflector 30, the plate 401 can be stably supported.
[0050] See Figures 5 to 13 As shown, in some embodiments, multiple bumps 4021 are spaced apart and evenly distributed. As described above, the multiple bumps 4021 are equally spaced along the edge of the plate 401, which can prevent local warping of the quartz plate 40 and thus avoid contact with the wafer 10.
[0051] See 5 to Figure 13 As shown, in some embodiments, the transverse cross-section of the bump 4021 is arc-shaped. The central angle of the bump 4021 can be 30°, 45°, or 60°, and of course, the central angle of the bump 4021 can also be other angles; the number of bumps 4021 includes, but is not limited to, 2, 3, and 4. It is understood that the wafer 10 and the reflector 30 are circular plates. In this embodiment, the plate body 401 is a circular plate with the same diameter as the reflector 30, and the bump 4021 has the same edge curvature as the plate body 401, which can better prevent the edge of the quartz plate 40 from warping.
[0052] See Figure 14 and Figure 15 As shown, in some embodiments, the support portion 402 includes a protrusion 4021, which is generally in a ring shape. In this embodiment, since the entire edge of the quartz plate 40 is provided with a protrusion 4021 forming an overall ring shape, the overall edge of the quartz plate 40 can be effectively prevented from warping.
[0053] According to a second aspect of this utility model, a chemical vapor deposition apparatus is provided, comprising a quartz plate as described in any of the above embodiments. It is understood that the beneficial effects of the second aspect can be found in the relevant description in the first aspect above, and will not be repeated here.
[0054] In summary, implementing the quartz plate and chemical vapor deposition equipment provided in this embodiment has at least the following beneficial technical effects:
[0055] (1) By providing a support part 402 below the edge of the plate body 401, the plate body 401 is supported by the support part 402 so that the plate body 401 is spaced above the reflector plate 30. The plate body 401 and the support part 402 are integrally formed, thereby avoiding the deformation of the quartz plate due to thermal stress concentration in the high temperature environment, and avoiding the contact between the plate body 401 of the quartz plate 40 and the wafer 10 or the reflector plate 30, which would cause structural damage to the wafer 10 or the reflector plate 30. At the same time, since the support part 402 is located at the edge of the plate body 401, it can also avoid the support part 402 from hindering the reflection function of the reflector plate 30, thereby ensuring the uniformity of the wafer temperature and improving the process effect.
[0056] (2) By providing two limiting holes 403 on the plate 401, and inserting limiting pins into the two limiting holes 403 respectively, it can be ensured that the quartz plate 40 will not detach laterally or rotate horizontally when heated.
[0057] (3) By using a closed annular bump 4021 or multiple bumps 4021 evenly arranged along the edge of the plate 401 to support the plate 401, the edge of the quartz plate 40 can be prevented from warping, thereby avoiding contact with the wafer 10.
[0058] The above are merely preferred embodiments of the present utility model and are not intended to limit the present utility model. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.
Claims
1. A quartz plate, characterized in that, It includes a plate and a support portion extending circumferentially along the edge of the plate. The support portion is disposed below the plate and abuts against the upper surface of the reflector plate, so that the plate is spaced above the reflector plate. The plate and the support portion are integrally formed.
2. The quartz plate according to claim 1, characterized in that, The quartz plate also includes two limiting holes and two limiting pins. The limiting holes are located on the plate body, and the limiting pins are inserted into the limiting holes. The two limiting holes and the two limiting pins are arranged in a one-to-one correspondence.
3. The quartz plate according to claim 2, characterized in that, The limiting pin is spaced apart from the wafer.
4. The quartz plate according to claim 2, characterized in that, The limiting hole and the limiting pin are in clearance fit.
5. The quartz plate according to claim 2, characterized in that, The limiting hole is circular, elliptical, or polygonal.
6. The quartz plate according to claim 1, characterized in that, The support portion includes a plurality of protrusions distributed circumferentially along the plate.
7. The quartz plate according to claim 6, characterized in that, Multiple bumps are spaced apart and evenly distributed.
8. The quartz plate according to claim 7, characterized in that, The transverse cross-section of the protrusion is arc-shaped.
9. The quartz plate according to claim 1, characterized in that, The support portion includes a protrusion, which is generally in the form of a ring.
10. A chemical vapor deposition apparatus, characterized in that, Includes the quartz plate as described in any one of claims 1 to 9.