Three-dimensional gas uniformizing plate for semiconductor etching or photoresist removing equipment

Abstract

The utility model discloses a three-dimensional gas uniformizing plate for semiconductor etching or degumming equipment, which comprises a body, through holes are uniformly distributed on the body, the body comprises a substrate and a stepped boss part, the radius of the stepped boss part is gradually reduced from the periphery to the circle center to form a plurality of stages of bosses, and the through holes are uniformly distributed on the body. And the through hole penetrates through the substrate of the body and the stepped boss part. Compared with the prior art, the plasma reactor has the advantages that the concentration of a plasma reactant is controlled by influencing the activity of the reactant through the depth of the through holes, airflow distribution is influenced by the density distribution of the through holes, effective decoupling in the design of two main factors is realized, and the design difficulty is effectively reduced. Moreover, by adopting the three-dimensional design, the equipment cost is reduced, and the system reliability is improved.

Description

Technical Field

[0001] This utility model relates to a gas equalization device, and more particularly to a three-dimensional gas equalization plate for semiconductor etching or resist removal equipment, belonging to the field of semiconductor plasma equipment technology. Background Technology

[0002] Plasma equipment is widely used in semiconductor manufacturing, material surface treatment, and other fields. Due to the uneven distribution of plasma and gas flow, gas homogenizers are frequently used in semiconductor equipment. A typical gas homogenizer consists of a flat metal plate with holes. By controlling the density and size of the holes, the amount and flow rate of reactants can be controlled, achieving high uniformity on the wafer surface. However, since wafer non-uniformity is caused by two main factors—gas flow rate and plasma intensity—the intensity distribution of plasma and the distribution of the gas flow field are difficult to measure and calculate accurately. In particular, these two factors influence each other; a single field can be calculated, but the combined field is extremely difficult to calculate. This makes the design of such gas homogenizers very challenging, resulting in poor gas homogenization. Therefore, developing a three-dimensional gas homogenizer for semiconductor etching or resist stripping equipment to precisely control plasma concentration distribution has become a problem urgently needing to be solved by those skilled in the art. Utility Model Content

[0003] This invention addresses the aforementioned shortcomings by providing a three-dimensional gas equalization plate for semiconductor etching or resist removal equipment. This gas equalization plate utilizes a three-dimensional perforation distribution. The density of the perforations controls the airflow, while the height distribution of the perforations controls the plasma path, thereby influencing reactant activity. This effectively separates two factors in the design process, greatly simplifying the design and achieving high plasma reaction uniformity.

[0004] The above-mentioned objective of this utility model is achieved through the following technical solution: a three-dimensional gas equalization plate for semiconductor etching or resist removal equipment, comprising a body, on which through holes are uniformly distributed, the body comprising a substrate and a stepped boss portion, the radius of the stepped boss portion decreasing sequentially from the periphery to the center to form a multi-level boss, the through holes penetrating the substrate and the stepped boss portion of the body.

[0005] Furthermore, each boss is circular.

[0006] Furthermore, the through holes are radially distributed on the body.

[0007] Furthermore, the entire body is made of metal.

[0008] The advantages of this invention compared to existing technologies are: This invention achieves effective decoupling of the two main design factors by utilizing the depth of the through-holes to influence reactant activity and control plasma reactant concentration, and by utilizing the density distribution of the through-holes to influence airflow distribution, thus significantly reducing design complexity. Furthermore, the three-dimensional design reduces equipment costs and improves system reliability. Attached Figure Description

[0009] Figure 1 This is a schematic diagram of the structure of this utility model.

[0010] Figure 2 This is a schematic diagram of a traditional air distribution plate.

[0011] Figure 3 This is a diagram showing the three-dimensional gas distribution plate and plasma intensity distribution curve of this utility model.

[0012] Figure 4 This is a schematic diagram of the structure of this utility model applied in etching equipment. Detailed Implementation

[0013] The present invention will now be described in further detail with reference to the accompanying drawings.

[0014] like Figure 1 , Figure 2 As shown, a three-dimensional gas equalization plate for semiconductor etching or resist removal equipment includes a body 1, which is made entirely of metal. Through holes 2 are uniformly distributed on the body 1, and the through holes 2 have equal radii. The through holes 2 are radially distributed on the body 1, denser in the middle and sparser around the perimeter. The body 1 includes a substrate 101 and stepped boss portions 102. The radius of the stepped boss portions 102 decreases from the perimeter to the center, forming multi-level bosses (three-level bosses in this embodiment). The through holes penetrate the substrate 101 and the stepped boss portions 102 of the body 1, and each level of boss is circular.

[0015] This invention discloses a novel three-dimensional gas uniform plate for semiconductor etching or resist removal. By utilizing the density distribution and height variation of the through holes 2, the two design factors of intensity distribution and gas flow distribution in the plasma are effectively decoupled, greatly reducing the difficulty of equipment development and achieving better process performance. Compared with traditional methods, it improves the uniformity of the wafer, and has lower costs and simpler assembly.

[0016] like Figure 3 and Figure 4The diagram shown is a cross-sectional view of the system of this invention applied in an etching apparatus. The etching apparatus 3 has a quartz barrel 4 with a diameter of 400mm and an inductor coil 5 with 3 turns. Gas enters from the top of the quartz barrel 4. The radio frequency (RF) frequency is 13.56MHz, with a maximum power of 3000W; the RF power is connected to the inductor coil 5 via a matching converter. After the gas is introduced, it passes through the three-dimensional gas equalization plate 1 and enters the lower chamber to uniformly etch the wafer 6. The plasma intensity exhibits a parabolic intensity (e.g., ...). Figure 3 As shown by the curve L, based on the attenuation of plasma after passing through the metal via, the vias are divided into three depths. This ensures that the strongest plasma in the middle region is attenuated by the longest metal via 2, resulting in a consistent plasma gas intensity reaching wafer 6. The gas distribution plate is divided into three depths, thus having three steps. The diameter of the three-dimensional gas distribution plate is 400mm. The first step has an outer diameter of 400mm, an inner diameter of 300mm, and a height of 10mm; the second step has an outer diameter of 300mm, an inner diameter of 120mm, and a height of 24mm; and the third step has an outer diameter of 120mm and a height of 37mm. The hole diameter is 4mm. The holes are distributed radially, following a reverse distribution pattern according to the airflow velocity distribution under the inlet conditions. That is, the holes are sparsely distributed in areas of high velocity and densely distributed in areas of low velocity. In this embodiment, the radial distribution d of the holes follows the function d = 0.5 * r^2 with respect to the radius r.

[0017] The design principle of this utility model is as follows:

[0018] Step 1: Calculate the distribution of the flow field in the cavity, and change the density of the holes with the same radius to make the gas flow velocity uniform.

[0019] Step 2: By calculating the radial distribution of plasma intensity, the hole height in Step 1 is reduced or enlarged according to the normalization ratio, and the gas equalization plate is divided into multiple concentric circular regions according to a certain distribution interval.

[0020] Step 3: Within each concentric circle region, according to the normalization ratio in Step 2, reduce or enlarge the thickness of the concentric circle by the corresponding factor to form a stepped distribution of different heights.

[0021] Step 4: Drill holes according to the pattern obtained in Step 1 on the multiple steps in Step 3.

[0022] The above description is merely an embodiment of this utility model and does not limit the patent scope of this utility model. Any equivalent structural or procedural transformations made based on the description and drawings of this utility model, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this utility model.

Claims

1. A three-dimensional gas equalization plate for semiconductor etching or resist stripping equipment, comprising a body having through holes uniformly distributed thereon, characterized in that: The body includes a substrate and a stepped boss portion. The radius of the stepped boss portion decreases from the periphery to the center, forming a multi-level boss. The through hole penetrates the substrate and the stepped boss portion of the body.

2. The three-dimensional gas equalization plate for semiconductor etching or resist removal equipment according to claim 1, characterized in that: Each level of boss is circular.

3. The three-dimensional gas equalization plate for semiconductor etching or resist stripping equipment according to claim 1, characterized in that: The through holes are radially distributed on the body.

4. A three-dimensional gas equalization plate for semiconductor etching or resist stripping equipment according to claim 1, characterized in that: The entire body is made of metal.

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