Wafer film removing device and crystal processing equipment

Abstract

The utility model provides a wafer film removing device and crystal processing equipment, belongs to the technical field of silicon carbide crystal processing, and solves the problem of poor wafer film cutting quality in the prior art. The device comprises a bearing table, the bearing table is provided with an accommodating area, and the accommodating area is used for accommodating a wafer; the heating piece is provided with a heating end, and the heating end acts on the containing area; and the film cutting piece is provided with a cutting end, the cutting end faces the periphery of the containing area, and at least one of the film cutting piece and the containing area has the rotational freedom degree of rotation relative to the other one of the film cutting piece and the containing area. The heating end is used for heating the elements in the containing area, the main purpose is to heat the film on the wafer or the cutting end of the film cutting piece, so that the film is softened at high temperature, resistance of the cutting end in the cutting process is reduced, wiredrawing of the film is reduced, the cutting effect is improved, and meanwhile the service life of the film cutting piece can be prolonged.

Description

Technical Field

[0001] This application belongs to the field of silicon carbide crystal processing technology, and specifically relates to a wafer stripping device and crystal processing equipment. Background Technology

[0002] Currently, after silicon carbide crystals are manufactured, they need to be cut, usually by diamond wire cutting or laser cutting. Due to their high manufacturing cost, in order to minimize cutting losses and reduce costs, the market increasingly uses laser cutting to focus a laser inside the crystal to form a release layer, and then peels off the wafer using ultrasonic vibration or other means.

[0003] After the laser cutting process, silicon carbide particles remain on the wafer surface. Therefore, it is necessary to coat the smooth surface of the wafer and thin the rough surface using a thinning device. Since the film size on the outer periphery of the smooth surface of the wafer is larger than the outer diameter of the wafer, a film cutting process is derived after coating to cut the film on the outer periphery of the smooth surface of the wafer.

[0004] In existing silicon carbide wafer cutting processes, a blade is used to cut the wafer by moving around its outer periphery. However, due to the viscosity and gel-like substances in the wafer, the blade encounters significant resistance during its movement, which can easily lead to problems such as stringing and deformation in the cutting area. The stringing and deformed parts can easily adhere to the wafer surface, forming protrusions or resulting in wafer edges with missing or incomplete film, thus reducing the quality of subsequent wafer processing.

[0005] Based on the above, the technical problem to be solved by this application is: how to improve the quality of film cutting. Utility Model Content

[0006] The purpose of this application is to address the aforementioned problems in the prior art by proposing a wafer stripping device and crystal processing equipment, thereby solving the problem of poor wafer stripping quality in the prior art. The technical effect of this application is to improve the processing quality of wafers.

[0007] The objective of this application can be achieved through the following technical solution: a wafer stripping device, comprising: a support stage, wherein a receiving area is provided on the support stage for receiving a wafer; a heating element having a heating end acting on the receiving area; and a cutting element having a cutting end facing the outer periphery of the receiving area, and at least one of the cutting element and the receiving area having a rotational degree of freedom relative to the other.

[0008] Understandably, the carrier stage serves as a platform, and a receiving area is arranged on the carrier stage to receive the wafer. The receiving area is preferably circular, but it can also be set in other shapes such as square. The size of the receiving area needs to be larger than the size of the wafer to be processed. The heating element heats the components in the receiving area through the heating end. The main purpose is to heat the film on the wafer or the cutting end of the film cutting component, thereby softening the film at high temperature. The resistance of the cutting end during the cutting process is reduced, reducing film fraying and improving the cutting effect. At the same time, it can also extend the service life of the film cutting component.

[0009] In the above-mentioned wafer stripping apparatus, the heating element includes: a conductive coil for energizing; and an insulating layer sleeved on the outer surface of the conductive coil, wherein the insulating layer has the heating end on the side near the receiving area.

[0010] Understandably, the conductive coil can be energized, generating heat, which is then conducted through the insulating layer to the membrane or cut end within the containment area, thus achieving heating. By covering the outer surface of the conductive coil with an insulating layer, electrical contact with other components in the device or leakage damage to the operator can be avoided.

[0011] In the wafer stripping apparatus described above, the support stage is equipped with a power supply unit, which is electrically connected to the conductive coil to supply power to the conductive coil.

[0012] It is understandable that the power supply component is a power source, and the power of the power source needs to meet the heating requirements of the conductive coil. By setting up the power supply component, the conductive coil can be continuously energized and heated, and the heating is highly controllable.

[0013] In the wafer stripping device described above, a holding part is provided at one end of the cutting member away from the cutting end. The holding part is for manual holding and is made of a high-temperature resistant material.

[0014] Understandably, by setting a high-temperature resistant grip on the film cutting part, burns can be prevented when the operator holds it.

[0015] In the wafer stripping device described above, a mating part is provided at one end of the cutting member away from the cutting end. The mating part is used for gripping by an external robotic arm, and the mating part is rigid.

[0016] Understandably, by setting a rigid mating part on the film cutting component, the mating part can be connected to an external robot. The mating connection can be achieved through magnetic connection, clamping connection, snap-fit, plug-in or vacuum adsorption connection, thereby controlling the movement of the robot to perform automated film cutting.

[0017] In the above-mentioned wafer stripping apparatus, a vacuum adsorption mechanism is provided below the accommodating area. The vacuum adsorption mechanism has adsorption holes, which act on the accommodating area to adsorb and fix the wafer.

[0018] It is understandable that by setting a vacuum adsorption mechanism below the containment area, gas is drawn into the adsorption hole, thereby creating a negative pressure in the adsorption hole to adsorb the wafer in the containment area, ensuring the stability of the wafer during film cutting.

[0019] In the wafer stripping apparatus described above, the receiving area includes an inner layer and an outer layer. The inner layer is used to receive the wafer, and the outer layer is used to receive the heating element. The outer layer allows the cutting end to extend in or out.

[0020] Understandably, the accommodating area is further divided into inner and outer layers to accommodate the wafer and heating element respectively. The outer layer allows the heating element and the cutting end to have room to move in at least the same vertical direction, and the cutting end and the film can be heated by the heating element simultaneously.

[0021] In the wafer stripping apparatus described above, a rotating mechanism is provided below the carrier stage, and the rotating mechanism acts on the carrier stage to drive the carrier stage to rotate.

[0022] It is understandable that by setting a rotating mechanism to drive the carrier platform to rotate, the film cutting component can be kept stationary, thereby enabling the film to be cut from the wafer in the accommodating area.

[0023] In the wafer stripping apparatus described above, multiple support columns are provided below the carrier stage, and the multiple support columns together support the carrier stage to keep the carrier stage away from the ground.

[0024] Understandably, since the wafers need to be protected from dust, the support platform should be kept away from the ground as much as possible. Therefore, the reference height of the support column is preferably not less than 1m.

[0025] Another objective of this application is to provide a crystal processing apparatus, including the aforementioned wafer stripping device. Exemplarily, this crystal processing apparatus includes wafer dicing equipment, thinning equipment, cleaning equipment, etc., and can be connected upstream and downstream of the wafer dicing process.

[0026] Compared with the prior art, this application has the following beneficial effects:

[0027] 1. This application heats the components in the accommodating area by heating the heating end. The main purpose is to heat the film on the wafer or the cutting end of the film cutting component, thereby softening the film at high temperature, reducing the resistance of the cutting end during the cutting process, reducing film fraying, improving the cutting effect, and extending the service life of the film cutting component.

[0028] 2. This application provides a vacuum adsorption mechanism below the containment area to extract gas into the adsorption hole, thereby creating a negative pressure in the adsorption hole to adsorb the wafer in the containment area, ensuring the stability of the wafer during film cutting.

[0029] 3. This application provides an outer layer to allow the heating element and the cutting end to have room to move in at least the same vertical direction, so that the cutting end and the film can be heated by the heating element at the same time. Attached Figure Description

[0030] Figure 1 This is a three-dimensional structural schematic diagram of Embodiment 1 of the wafer stripping apparatus of this application;

[0031] Figure 2 yes Figure 1 A top view of the structure shown;

[0032] Figure 3 yes Figure 1 A front view of the structure shown;

[0033] Figure 4 This is a three-dimensional structural schematic diagram of Embodiment 2 of the wafer stripping apparatus of this application;

[0034] Figure 5 This is a schematic diagram of the structure of the wafer stripping device of this application;

[0035] In the figure, 100 is the support platform; 110 is the accommodating area; 111 is the inner layer; 112 is the outer layer; 120 is the power supply component; 130 is the support column; 200 is the heating component; 210 is the conductive coil; 211 is the heating end; 220 is the insulating layer; 300 is the film cutting component; 310 is the cutting end; 320a is the holding part; 320b is the mating part; 400 is the vacuum adsorption mechanism; 410 is the adsorption hole; and 500 is the rotating mechanism. Detailed Implementation

[0036] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0037] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0038] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0039] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0040] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0041] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.

[0042] Please refer to the attached diagram in the instruction manual. Figure 1 , Figure 2 and Figure 5 This application includes a support stage 100, a heating element 200, and a wafer cutting element 300. The support stage 100 is provided with a receiving area 110 for receiving wafers. The heating element 200 has a heating end 211 that acts on the receiving area 110. The wafer cutting element 300 has a cutting end 310 that faces the outer periphery of the receiving area 110. At least one of the wafer cutting element 300 and the receiving area 110 has a rotational degree of freedom to rotate relative to the other. It is understood that the carrier stage 100 serves as a carrier, and a receiving area 110 is arranged on the carrier stage 100. The receiving area 110 is used to receive the wafer. The receiving area 110 is preferably circular, but it can also be set in other shapes such as square. The size of the receiving area 110 needs to be larger than the size of the wafer to be processed. The heating element 200 heats the components in the receiving area 110 through the heating end 211. The main purpose is to heat the film on the wafer or the cutting end 310 of the film cutting element 300, thereby softening the film at high temperature. The resistance of the cutting end 310 during the cutting process is reduced, reducing film fraying and improving the cutting effect. At the same time, it can also extend the service life of the film cutting element 300.

[0043] In some embodiments, the heating element 200 includes a conductive coil 210 and an insulating layer 220. The conductive coil 210 is energized, and the insulating layer 220 is sleeved on the outer surface of the conductive coil 210. A heating end 211 is located on the side of the insulating layer 220 near the receiving area 110. It is understood that the conductive coil 210 can be energized, thereby generating heat, which is conducted through the insulating layer 220 to the film or cut end 310 within the receiving area 110, thus achieving heating. By sleeved with the insulating layer 220 on the outer surface of the conductive coil 210, electrical contact with other components in the device or leakage damage to the operator can be avoided.

[0044] In some embodiments, the support platform 100 is equipped with a power supply component 120, which is electrically connected to the conductive coil 210 to supply power to the conductive coil 210. It is understood that the power supply component 120 is a power source, and the power of the power source needs to meet the heating requirements of the conductive coil 210. By setting the power supply component 120, the conductive coil 210 can be continuously energized and heated, and the heating is highly controllable.

[0045] In some embodiments, a plurality of support columns 130 are provided below the support stage 100, and the plurality of support columns 130 together support the support stage 100 to keep the support stage 100 away from the ground. It is understood that, since the wafer needs to be dustproof, the support stage 100 should be kept away from the ground as much as possible, so the reference height of the support columns 130 is preferably not less than 1m.

[0046] See Figure 2 In some embodiments, the accommodating region 110 includes an inner layer 111 and an outer layer 112. The inner layer 111 is used to accommodate the wafer, and the outer layer 112 is used to accommodate the heating element 200. The outer layer 112 allows the cutting end 310 to extend into or out of the accommodating region. It is understood that the accommodating region 110 is further divided into an inner layer 111 and an outer layer 112 to accommodate the wafer and the heating element 200, respectively. The outer layer 112 allows the heating element 200 and the cutting end 310 to have space for movement at least in the same vertical direction, and the cutting end 310 and the film can be heated simultaneously by the heating element 200.

[0047] See Figure 3 In some embodiments, a vacuum adsorption mechanism 400 is provided below the accommodating area 110. The vacuum adsorption mechanism 400 has an adsorption hole 410, which acts on the accommodating area 110 to adsorb and fix the wafer.

[0048] It is understandable that by setting a vacuum adsorption mechanism 400 below the accommodating area 110, gas is drawn into the adsorption hole 410, thereby creating a negative pressure in the adsorption hole 410 to adsorb the wafer in the accommodating area 110, ensuring the stability of the wafer during film cutting.

[0049] like Figure 4 As shown, in some embodiments, a rotating mechanism 500 is provided below the support stage 100, and the rotating mechanism 500 acts on the support stage 100 to drive the support stage 100 to rotate. It can be understood that by setting the rotating mechanism 500 to drive the support stage 100 to rotate, the film cutting member 300 is kept stationary and fixed, thereby realizing the cutting of the film of the wafer in the accommodating area 110.

[0050] See Figure 5 In some embodiments, a gripping portion 320a is provided at one end of the film cutting member 300 away from the cutting end 310. The gripping portion 320a is for manual gripping and is made of a high-temperature resistant material. It is understood that by providing a high-temperature resistant gripping portion 320a on the film cutting member 300, burns can be prevented when the operator grips it.

[0051] Continue to refer to Figure 5In some embodiments, the film cutting member 300 has a mating portion 320b at one end away from the cutting end 310. The mating portion 320b is for gripping by an external robotic arm (not shown), and the mating portion 320b is rigid. It is understood that by providing a rigid mating portion 320b on the film cutting member 300, the mating portion 320b can be connected to an external robotic arm. The mating connection can be made by magnetic attraction, clamping, snap-fit, insertion, or vacuum adsorption, thereby controlling the movement of the robotic arm to perform automated film cutting.

[0052] The crystal processing equipment of this application includes a wafer stripping device. Exemplarily, the crystal processing equipment includes wafer dicing equipment, thinning equipment, cleaning equipment, etc., and can be connected to the upstream and downstream processes of the wafer dicing procedure.

[0053] Beneficial effects:

[0054] This application heats the components within the accommodating area 110 via the heating end 211. The main purpose is to heat the film on the wafer or the cutting end 310 of the cutting component 300, thereby softening the film at high temperature. This reduces the resistance of the cutting end 310 during the cutting process, reduces film tearing, improves the cutting effect, and extends the service life of the cutting component 300. By providing a vacuum adsorption mechanism 400 below the accommodating area 110, gas is extracted into the adsorption hole 410, thereby creating a negative pressure in the adsorption hole 410 to adsorb the wafer within the accommodating area 110, ensuring stability during wafer cutting. By providing an outer layer 112, the heating element 200 and the cutting end 310 are allowed to have room to move at least in the same vertical direction, allowing the cutting end 310 and the film to be heated simultaneously by the heating element 200.

[0055] The specific embodiments described herein are merely illustrative examples of the spirit of this application. Those skilled in the art to which this application pertains may make various modifications or additions to the described specific embodiments or use similar methods to substitute them, without departing from the spirit of this application or exceeding the scope defined by the appended claims.

Claims

1. A wafer stripping device, characterized in that, include: A support stage (100) is provided with a receiving area (110) for receiving a wafer; A heating element (200) having a heating end (211) acting on the receiving area (110); as well as A film cutting member (300) has a cutting end (310) facing the outer periphery of the receiving area (110), and at least one of the film cutting member (300) and the receiving area (110) has a rotational degree of freedom to rotate relative to the other.

2. The wafer stripping apparatus according to claim 1, characterized in that, The heating element (200) includes: A conductive coil (210) is used to conduct electricity; An insulating layer (220) is sleeved on the outer surface of the conductive coil (210), and the insulating layer (220) has the heating end (211) on the side near the receiving area (110).

3. The wafer stripping apparatus according to claim 2, characterized in that, The support platform (100) is equipped with a power supply component (120), which is electrically connected to the conductive coil (210) to supply power to the conductive coil (210).

4. The wafer stripping apparatus according to claim 1, characterized in that, The cutting member (300) has a holding part (320a) at one end away from the cutting end (310), the holding part (320a) is for manual holding, and the holding part (320a) is made of a high temperature resistant material.

5. The wafer stripping apparatus according to claim 1, characterized in that, The cutting member (300) has a mating part (320b) at one end away from the cutting end (310). The mating part (320b) is used for gripping by an external robotic arm and is rigid.

6. The wafer stripping apparatus according to claim 1, characterized in that, A vacuum adsorption mechanism (400) is provided below the accommodating area (110). The vacuum adsorption mechanism (400) has an adsorption hole (410). The adsorption hole (410) acts on the accommodating area (110) to adsorb and fix the wafer.

7. The wafer stripping apparatus according to claim 1, characterized in that, The accommodating area (110) includes an inner layer (111) and an outer layer (112), the inner layer (111) for accommodating the wafer, the outer layer (112) for accommodating the heating element (200), and the outer layer (112) allowing the cutting end (310) to extend or protrude.

8. The wafer stripping apparatus according to claim 1, characterized in that, A rotating mechanism (500) is provided below the support platform (100), and the rotating mechanism (500) acts on the support platform (100) to drive the support platform (100) to rotate.

9. The wafer stripping apparatus according to claim 1, characterized in that, The support platform (100) is provided with multiple support columns (130) below it, and the multiple support columns (130) together support the support platform (100) so that the support platform (100) is away from the ground.

10. A crystal processing device, characterized in that, Includes the wafer stripping apparatus as described in any one of claims 1-9.

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