Airflow ring assembly and substrate processing apparatus

Abstract

The utility model relates to an airflow ring assembly and a substrate processing device. The airflow ring assembly comprises a mounting base, an air ring and a plurality of first inflation pipes. The mounting seat is connected to the inner wall of the reaction chamber; the gas ring is mounted on the mounting seat, the gas ring comprises a plurality of subsection gas channels which are sequentially arranged in the circumferential direction of the gas ring, any two adjacent subsection gas channels are not communicated with each other, and each subsection gas channel is provided with at least one first exhaust part. Each first gas filling pipe is correspondingly communicated with each segmented gas passage, each first gas filling pipe is provided with a flow regulating valve and a pressure regulating valve, and each first gas filling pipe is used for being communicated with a gas source for providing reaction gas. The thickness of the thin film deposited in each area of the substrate can be conveniently adjusted, the uniformity of the thickness of the thin film can be improved, the uniformity of thin film deposition can be adjusted without cooling and repeated cavity opening in related technologies, then manpower can be greatly saved, the working efficiency of the machine can be greatly improved, and the normal operation time of the machine can be greatly prolonged.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to an airflow ring assembly and a substrate processing apparatus. Background Technology

[0002] In integrated circuit manufacturing, deposition processes, including but not limited to Chemical Vapor Deposition (CVD) or High-Density Plasma Chemical Vapor Deposition (HDP CVD), are used to deposit films of various materials on substrates. These deposition processes can occur in enclosed processing chambers. With the increasing miniaturization and precision of electronic products, the dimensions of features on substrates continue to shrink. Further reductions in these dimensions require precise control over various aspects of the deposition process, such as gas distribution uniformity, gas mixing uniformity, concentration uniformity, and the amount of gas supplied to the substrate surface.

[0003] In related technologies, the uniformity of the thin film changes after each machine maintenance or troubleshooting. Process engineers typically optimize the machine program to restore the film uniformity to the process level. However, for HDPCVD, due to the special film morphology formed on the substrate surface using a gas ring deposition method, process engineers usually need to open the cavity multiple times to adjust or replace the side nozzles, using side nozzles with appropriate vent sizes to optimize film uniformity. This results in significant losses in machine uptime and lower work efficiency. Utility Model Content

[0004] Therefore, it is necessary to overcome the shortcomings of the prior art and provide an airflow ring assembly and a substrate processing device, which can improve the uniformity of the thin film deposited on the substrate and has higher working efficiency.

[0005] An airflow ring assembly is disposed within the reaction chamber of a substrate processing apparatus, the airflow ring assembly comprising:

[0006] Mounting base, the mounting base being connected to the inner wall of the reaction chamber;

[0007] A gas ring is mounted on the mounting base. The gas ring includes a plurality of segmented gas channels arranged sequentially along its circumferential direction. Any two adjacent segmented gas channels are not connected to each other. Each segmented gas channel is provided with at least one first exhaust section.

[0008] Multiple first inflation tubes are provided, each first inflation tube is connected to each of the segmented gas channels, each first inflation tube is equipped with a flow regulating valve and a pressure regulating valve, and each first inflation tube is used to connect to a gas source that provides reaction gas.

[0009] In one embodiment, each of the segmented air passages is provided with a plurality of first exhaust sections; each of the first exhaust sections of the segmented air passages is arranged at equal intervals along the circumferential direction of the gas ring.

[0010] In one embodiment, the number of segmented air passages is 2 to 8; and / or, the number of first exhaust portions in each of the segmented air passages is 2 to 8.

[0011] In one embodiment, each of the segmented airways has the same length.

[0012] In one embodiment, each of the first inflation tubes is provided with a pressure detector; the flow regulating valve is a flow control valve or a manual regulating valve; the pressure regulating valve is a pressure control valve or a manual regulating valve.

[0013] In one embodiment, the gas ring is installed inside the mounting base; the mounting base has a plurality of channels, each channel being correspondingly disposed between each of the first inflation tubes and each of the segmented air channels, and each of the first inflation tubes being connected to each of the first inflation tubes through each of the channels.

[0014] In one embodiment, the gas rings are multiple and arranged sequentially along the axial direction.

[0015] A substrate processing apparatus includes the aforementioned airflow ring assembly and a reaction chamber, wherein the airflow ring assembly is disposed inside the reaction chamber and the mounting base is connected to the inner wall of the reaction chamber.

[0016] In one embodiment, the substrate processing apparatus further includes a gas supply pipe connected to the gas source, and a plurality of first inflation pipes are connected in parallel to the gas supply pipe; or, the substrate processing apparatus further includes a plurality of gas supply pipes connected to the gas source, and each gas supply pipe is correspondingly connected to each of the first inflation pipes.

[0017] In one embodiment, the substrate processing apparatus further includes a controller; a pressure detector is also provided on the first inflation tube; the flow regulating valve is a flow control valve, and the pressure regulating valve is a pressure control valve; the pressure detector, the flow regulating valve, and the pressure regulating valve are all electrically connected to the controller.

[0018] The aforementioned airflow ring assembly and substrate processing device, because any two adjacent segmented air channels are not interconnected, and each segmented air channel is connected to a corresponding first gas filling pipe, and each first gas filling pipe is equipped with a flow regulating valve and a pressure regulating valve, allows each segmented air channel to work independently without affecting each other. The flow rate and pressure of the reaction gas discharged from each segmented air channel are flexibly adjusted by their respective flow regulating valves and pressure regulating valves. This facilitates the adjustment of the film thickness deposited in different areas of the substrate, improves the uniformity of the film thickness, and eliminates the need for repeated cooling and cavity opening as in related technologies to adjust the uniformity of film deposition. This significantly saves manpower and improves the working efficiency and uptime of the machine. Attached Figure Description

[0019] Figure 1 This is a structural diagram of a substrate processing apparatus according to an embodiment of this application.

[0020] Figure 2 This is a structural diagram of a substrate processing apparatus according to another embodiment of this application.

[0021] Figure 3 for Figure 1 or Figure 2 A structural diagram of one embodiment of the airflow ring assembly in the device shown.

[0022] Figure 4 for Figure 1 or Figure 2 Another embodiment of the airflow ring assembly in the device shown is illustrated.

[0023] Figure 5 for Figure 1 or Figure 2 A structural diagram of another embodiment of the airflow ring assembly in the device shown.

[0024] 10. Airflow ring assembly; 11. Mounting base; 111. Channel; 12. Gas ring; 121. Segmented air passage; 122. First exhaust section; 123. Separator; 13. First inflation pipe; 131. Flow regulating valve; 132. Pressure regulating valve; 133. Pressure detector; 20. Reaction chamber; 21. Lower chamber; 22. Upper chamber; 30. Base; 31. Electrostatic chuck; 40. Base plate; 50. Second inflation pipe; 60. Exhaust pipe; 61. Second exhaust section; 70. Cleaning pipeline. Detailed Implementation

[0025] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0026] It should be noted that the substrate in this embodiment can be a semiconductor wafer at any stage of the process of forming semiconductor elements, such as integrated circuits or discrete devices, on a substrate. In one embodiment, the substrate comprises a dielectric layer with an extremely low dielectric constant and a metal layer on the semiconductor substrate. The substrate can be a photomask, a semiconductor wafer, or other workpiece known to those skilled in the art of electronic component manufacturing. In at least some embodiments, the substrate comprises any material used to manufacture any integrated circuit, passive (e.g., capacitor, inductor), and active (e.g., transistor, photodetector, laser, diode) microelectronic components. The substrate may comprise an insulating material (e.g., a dielectric material) separating such active and passive microelectronic components from one or more conductive layers formed on top of them. In one embodiment, the substrate is a semiconductor substrate comprising one or more dielectric layers, such as silicon, gallium nitride, gallium arsenide, silicon dioxide, silicon nitride, sapphire, and other dielectric materials. In one embodiment, the substrate comprises a stack of one or more wafers. A wafer with one or more layers may contain a conductive layer, a semiconductor layer, an insulating layer, or any combination of the foregoing.

[0027] As described in the background art, in related technologies, the uniformity of the film changes after each machine maintenance or fault recovery. Optimizing the machine program is insufficient to restore the film uniformity to the process level, requiring repeated cavity openings to adjust or replace the side nozzles to improve film uniformity. This results in significant losses in machine uptime and low work efficiency. The inventors have discovered that the reason for this problem is that the gas ring in the related technology has a ring-shaped airflow channel. All areas of this airflow channel are interconnected along its circumference, and multiple side nozzles are arranged along the circumference of the gas ring. Different parts of the gas ring along its circumference are connected to the corresponding side nozzles, causing the side nozzles to influence each other to a certain extent and have low independence. This makes it difficult to control and adjust the gas pressure and gas volume emitted from each side nozzle, thus requiring frequent cavity openings to adjust or replace the side nozzles.

[0028] For the reasons mentioned above, this application provides an airflow ring assembly and a substrate processing apparatus, which can improve the uniformity of the thin film deposited on the substrate and is a technical solution with high working efficiency.

[0029] See Figure 1 and Figure 3 , Figure 1 A structural diagram of a substrate processing apparatus according to an embodiment of this application is shown. Figure 3 It shows Figure 1 The diagram shows a structural embodiment of the airflow ring assembly 10 in the device. An embodiment of this application provides an airflow ring assembly 10 for installation inside the reaction chamber 20 of a substrate processing apparatus. The airflow ring assembly 10 includes: a mounting base 11, a gas ring 12, and a plurality of first gas filling pipes 13. The mounting base 11 is connected to the inner wall of the reaction chamber 20. The gas ring 12 is mounted on the mounting base 11 and includes a plurality of segmented gas channels 121 arranged sequentially along its circumferential direction. Any two adjacent segmented gas channels 121 are not interconnected. Each segmented gas channel 121 has at least one first exhaust portion 122. Each first gas filling pipe 13 is correspondingly connected to each segmented gas channel 121, and each first gas filling pipe 13 is provided with a flow regulating valve 131 and a pressure regulating valve 132. Each first gas filling pipe 13 is used to connect to a gas source providing reaction gas.

[0030] The aforementioned airflow ring assembly 10, since any two adjacent segmented air channels 121 are not interconnected, and each segmented air channel 121 is connected to a first gas filling pipe 13, and each first gas filling pipe 13 is equipped with a flow regulating valve 131 and a pressure regulating valve 132, allows each segmented air channel 121 to work independently without affecting each other. The flow rate and pressure of the reaction gas discharged from each segmented air channel 121 are flexibly adjusted by their respective flow regulating valve 131 and pressure regulating valve 132. This facilitates the adjustment of the film thickness deposited in each area of ​​the substrate 40, improves the uniformity of the film thickness, and eliminates the need for repeated cooling and cavity opening as in related technologies to adjust the uniformity of film deposition. This greatly saves manpower and improves the working efficiency and uptime of the machine.

[0031] It should be noted that the reacting gases include, but are not limited to, SiH4, H2O or NH3, etc. The specific gases can be selected and set according to actual needs, and are not limited here.

[0032] It should be noted that, for a gas ring 12, all the first inflation tubes 13 can be connected to the same gas source to deliver the gas from the same gas source to each of the first exhaust sections 122 of the gas ring 12; or they can be connected to at least two gas sources to deliver at least two different gases to each of the segmented gas passages 121 of the gas ring 12.

[0033] In some embodiments, the first exhaust portion 122 includes, but is not limited to, being configured as an exhaust port or a nozzle. In this embodiment, the first exhaust portion 122 is specifically configured as a nozzle, which, compared to an exhaust port, makes it easier to spray the reactive gas onto the surface of the substrate 40, thereby facilitating the deposition and formation of a thin film on the surface of the substrate 40.

[0034] Optionally, the nozzle may be detachably mounted on the gas ring 12, including but not limited to. In this way, the nozzle can be replaced according to actual needs, and a nozzle with a suitable aperture size can be selected to meet process requirements, thereby improving the uniformity of thin film deposition on the surface of the substrate 40.

[0035] Please see Figures 3 to 5 In some embodiments, the gas ring 12 is provided with a plurality of partitions 123 arranged sequentially along its circumferential direction. The partitions 123 include, but are not limited to, partition plates or partition blocks, and act as isolation walls, separating the two segmented air passages 121 on their left and right sides, thus preventing them from communicating with each other. The plurality of partitions 123 divide the annular channel of the gas ring 12 to form a plurality of segmented air passages 121 arranged sequentially along the circumferential direction and not communicating with each other. That is, the channel between any two adjacent partitions 123 constitutes one segmented air passage 121.

[0036] As the requirements for filling capacity and film uniformity of the machine tool increase, the number of first exhaust sections 122 increases accordingly. Optionally, the number of first exhaust sections 122 in each segmented air passage 121 is not limited to one, but is set to multiple, such as two, three, four, six, eight or more, and the specific number is not limited here.

[0037] The number of first exhaust sections 122 in each segmented air passage 121 can be either the same or different, and this is not limited here.

[0038] When the number of first exhaust sections 122 in a segmented air passage 121 is set to 2 to 8, the number of first exhaust sections 122 is set appropriately. On the one hand, it is not too many, which would increase the number of nozzles, and on the other hand, it is not too few, which would affect the uniformity of the deposited film.

[0039] Specifically, the first exhaust sections 122 of the segmented air passage 121 are arranged at equal intervals along the circumferential direction of the gas ring 12, for example... Figure 3 As shown, or as Figure 4 As shown, this can help improve the uniformity of the deposited film.

[0040] Of course, the first exhaust sections 122 of the segmented air passage 121 can also be arranged at unequal intervals along the circumferential direction of the gas ring 12.

[0041] When the total number of first exhaust portions 122 on the gas ring 12 increases, in order to improve the uniformity of the deposited thin film on the substrate 40, the number of segmented gas channels 121 can be increased accordingly. For example, the number of segmented gas channels 121 can be two (e.g., Figure 5 (as shown), 3, 4 (as shown) Figure 3 or Figure 4 (As shown), there may be 6, 8 or more, the specific number is not limited. When the number of segmented gas channels 121 increases, the number of first gas filling tubes 13 increases accordingly, so as to provide reaction gas to the corresponding segmented gas channels 121.

[0042] When the number of segmented gas channels 121 on a gas ring 12 is set to 2 to 8, the number of segmented gas channels 121 is set appropriately. On the one hand, it is not too many, which would increase the number of first gas filling tubes 13 and thus increase costs. On the other hand, it is not too few, which would affect the uniformity of the deposited film.

[0043] Please see Figures 3 to 5 In some embodiments, the lengths of the segmented air channels 121 are, for example, the same. This facilitates the adjustment and control of the gas in each segmented air channel 121, and improves the uniformity of the thin film deposition at various locations on the surface of the substrate 40. Of course, the lengths of the segmented air channels 121 can also be different.

[0044] In one embodiment, each first inflation tube 13 is equipped with a pressure detector 133, which detects the gas pressure in the first inflation tube 13 and monitors the gas pressure to ensure that the reaction gas pressure in the first inflation tube 13 is within a preset range. Furthermore, the flow regulating valve 131 can be either a flow control valve, electrically connected to a controller, adjusting the flow rate under the controller's control, eliminating the need for manual adjustment by process personnel and improving automation; or it can be a manual regulating valve, allowing process personnel to manually adjust the flow rate according to actual needs. Optionally, the flow regulating valve 131 can also detect the flow rate of the first inflation tube 13, offering powerful functionality without requiring a separate flow detector. Similarly, the pressure regulating valve 132 can be either a pressure control valve, electrically connected to a controller, adjusting the pressure under the controller's control, eliminating the need for manual adjustment by process personnel and improving automation; or it can be a manual regulating valve, allowing process personnel to manually adjust the pressure according to actual needs.

[0045] In some embodiments, the gas ring 12 is disposed inside the mounting base 11. Compared to being disposed on the outer surface of the mounting base 11, this facilitates cleaning of the exterior of the mounting base 11, reduces particulate matter accumulation, and improves the processing quality of the substrate 40. Furthermore, the mounting base 11 is provided with a plurality of channels 111, each channel 111 correspondingly disposed between each first gas filling pipe 13 and each segmented gas channel 121. Each first gas filling pipe 13 is connected to each other through each channel 111. In addition, the first exhaust section 122 is a nozzle, and all are located outside the mounting base 11, thereby enabling the reaction gas to be sprayed onto the surface of the substrate 40.

[0046] In one embodiment, the gas ring 12 is not limited to, for example, Figure 1 The one shown can also be, for example, the one shown. Figure 2 The apparatus shown has multiple gas rings arranged sequentially along the axial direction. Thus, the axial direction of the gas rings 12 is also the height direction of the reaction chamber 20. Each gas ring 12 is arranged at multiple different height positions in the reaction chamber 20, allowing the reaction gas to be ejected from different height positions, making the operation more flexible. Compared with a single gas ring 12 in related technologies, this can improve the uniformity of thin film deposition.

[0047] Specifically, the inner and outer diameters of each gas ring 12 are kept consistent and coaxially arranged.

[0048] In some embodiments, the number and length of the segmented air passages 121 of each gas ring 12 can be identical or different, and can be flexibly adjusted and set according to actual needs. Furthermore, the number of first exhaust sections 122 of each gas ring 12 can be identical or different. When the number, length, and number of first exhaust sections 122 of each gas ring 12 are identical, parts standardization is achieved, thereby reducing costs; when the number, length, and number of first exhaust sections 122 of each gas ring 12 are different, control operations become more flexible.

[0049] Alternatively, as an alternative, when there are multiple gas rings 12, each gas ring 12 has a first exhaust section 122 arranged only in a preset position, i.e., in a segmented gas channel 121 of a certain region. The segmented gas channels 121 in other regions do not have first exhaust sections 122, and the selected positions of the segmented gas channels 121 for each gas ring 12 are different. When projected onto the mounting base 11 along the axial direction, the projections of each first exhaust section 122 on the mounting base 11 are arranged sequentially at intervals along the circumferential direction of the gas ring 12. In this way, the total flow rate of the reactant gas remains unchanged. When improving the machine in related technologies, the internal program structure does not need to be changed; only the pressure regulating valve 132 needs to be adjusted to control the pressure of each first gas filling pipe 13, thus reducing costs.

[0050] Please see Figure 1 and Figure 3 In one embodiment, this application also provides a substrate processing apparatus, which includes an airflow ring assembly 10 as described in any of the above embodiments, and a reaction chamber 20. The airflow ring assembly 10 is disposed inside the reaction chamber 20, and a mounting base 11 is connected to the inner wall of the reaction chamber 20. Specifically, the reaction chamber 20 includes a lower chamber 21 and an upper chamber 22 connected to the lower chamber 21. Optionally, the upper chamber 22 and the lower chamber 21 are detachably connected, for example, allowing the upper chamber 22 to be opened as needed for various operations such as maintenance of the reaction chamber 20. The mounting base 11 is connected to the inner wall of the upper chamber 22.

[0051] In addition, the substrate processing apparatus also includes a base 30 disposed inside the reaction chamber 20. The base 30 is provided with an electrostatic chuck 31, which is used to support and hold the substrate 40. The substrate 40 is located below the gas ring 12. When the reaction gas ejected from the gas ring 12 flows to the surface of the substrate 40, a chemical reaction occurs, and a thin film can be deposited on the surface of the substrate 40 to form a film.

[0052] In addition, the substrate processing apparatus also includes a second gas filling pipe 50 and an exhaust pipe 60 communicating with the second gas filling pipe 50. The second gas filling pipe 50 is used to communicate with a gas source. The gas source is output to the exhaust pipe 60 through the second gas filling pipe 50, and then enters the interior of the reaction chamber 20 through the exhaust pipe 60. The exhaust pipe 60 has a second exhaust section 61 at its outlet end, which includes, but is not limited to, a nozzle. The second exhaust section 61 is located at the top of the reaction chamber 20 and directly above the central region of the substrate 40. The second exhaust section 61 enables the reaction gas to be supplied to the substrate 40 from directly above the central region of the substrate 40, and a thin film is deposited on the surface of the substrate 40 through a chemical reaction.

[0053] Furthermore, the substrate processing apparatus also includes a cleaning conduit 70. The cleaning conduit 70 is used to convert cleaning gas into plasma and introduce it into the reaction chamber 20 to clean the reaction chamber 20. Optionally, the cleaning conduit 70 is connected to an exhaust pipe 60, for example, which leads from the top of the reaction chamber 20 into the interior of the reaction chamber 20.

[0054] In the aforementioned substrate processing apparatus, since any two adjacent segmented gas channels 121 are not interconnected, and each segmented gas channel 121 is connected to a corresponding first gas filling pipe 13, and each first gas filling pipe 13 is equipped with a flow regulating valve 131 and a pressure regulating valve 132, each segmented gas channel 121 can work independently without affecting each other. The flow rate and pressure of the reaction gas discharged from each segmented gas channel 121 are regulated by their respective flow regulating valve 131 and pressure regulating valve 132. In this way, it is easy to adjust the film thickness of the thin film deposited in each area of ​​the substrate 40, which can improve the uniformity of the film thickness. The machine does not need to repeatedly open the cavity for cooling as in related technologies to adjust the uniformity of film deposition, thereby greatly saving manpower and improving the working efficiency and uptime of the machine.

[0055] In one embodiment, the substrate processing apparatus further includes a gas supply pipe connected to a gas source, and a plurality of first gas filling pipes 13 are connected in parallel to the gas supply pipe. Thus, the number of gas supply pipes is the same as the number of gas supply pipes in the substrate processing apparatus of the related art, and the number of gas supply pipes is not increased. When improving the substrate processing apparatus of the related art, the gas supply pipes in the substrate processing apparatus can be reused.

[0056] Of course, the substrate processing apparatus also includes multiple gas supply pipes connected to the gas source, and each gas supply pipe is connected to each first gas filling pipe 13.

[0057] In one embodiment, the substrate processing apparatus further includes a controller. A pressure detector 133 is also provided on the first inflation pipe 13. The flow regulating valve 131 is a flow control valve, and the pressure regulating valve 132 is a pressure control valve. The pressure detector 133, the flow regulating valve 131, and the pressure regulating valve 132 are all electrically connected to the controller.

[0058] In one embodiment, the substrate processing apparatus further includes a film thickness detector. The film thickness detector includes, but is not limited to, photoelectric measurement devices. The film thickness detector is used to detect the film thickness on the surface of the substrate 40 and generate a film thickness detection signal based on the film thickness. The controller determines whether the uniformity of the film thickness deposited on the surface of the substrate 40 meets the requirements based on the film thickness detection signal. When the requirements are not met, the controller adjusts each flow regulating valve 131 and each pressure regulating valve 132 accordingly based on the film thickness of each region, thereby improving the uniformity of the film thickness deposited on each region of the substrate 40 surface. Specifically, for regions with a larger film thickness, the corresponding flow regulating valve 131 reduces the flow rate of the reactant gas, and / or the corresponding pressure regulating valve 132 reduces the pressure of the reactant gas; for regions with a smaller film thickness, the corresponding flow regulating valve 131 increases the flow rate of the reactant gas, and / or the corresponding pressure regulating valve 132 increases the pressure of the reactant gas.

[0059] It should be noted that the "gas ring 12" in this example can be "part of the mounting base 11", that is, the "gas ring 12" is integrally formed with the "other parts of the mounting base 11"; or it can be a separate component that can be separated from the "other parts of the mounting base 11", that is, the "gas ring 12" can be manufactured independently and then combined with the "other parts of the mounting base 11" to form a whole.

[0060] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0061] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0062] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0063] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0064] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0065] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0066] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. An airflow ring assembly for use inside the reaction chamber of a substrate processing apparatus, characterized in that, The airflow ring assembly includes: Mounting base, the mounting base being connected to the inner wall of the reaction chamber; A gas ring is mounted on the mounting base. The gas ring includes a plurality of segmented gas channels arranged sequentially along its circumferential direction. Any two adjacent segmented gas channels are not connected to each other. Each segmented gas channel is provided with at least one first exhaust section. Multiple first inflation tubes are provided, each first inflation tube is connected to each of the segmented gas channels, each first inflation tube is equipped with a flow regulating valve and a pressure regulating valve, and each first inflation tube is used to connect to a gas source that provides reaction gas.

2. The airflow ring assembly according to claim 1, characterized in that, Each of the segmented air passages is provided with a plurality of first exhaust sections; each of the first exhaust sections of the segmented air passages is arranged at equal intervals along the circumferential direction of the gas ring.

3. The airflow ring assembly according to claim 1, characterized in that, The number of segmented air passages is 2 to 8; and / or, the number of first exhaust sections in each of the segmented air passages is 2 to 8.

4. The airflow ring assembly according to claim 1, characterized in that, Each of the described segmented airways has the same length.

5. The airflow ring assembly according to claim 1, characterized in that, Each of the first inflation tubes is equipped with a pressure detector; the flow regulating valve is a flow control valve or a manual regulating valve; the pressure regulating valve is a pressure control valve or a manual regulating valve.

6. The airflow ring assembly according to claim 1, characterized in that, The gas ring is installed inside the mounting base; the mounting base has multiple channels, each channel being correspondingly located between each of the first inflation tubes and each of the segmented air channels, and each of the first inflation tubes being connected to each of the first inflation tubes through each of the channels.

7. The airflow ring assembly according to any one of claims 1 to 6, characterized in that, The gas rings are multiple and arranged sequentially along the axial direction.

8. A substrate processing apparatus, characterized in that, The substrate processing apparatus includes an airflow ring assembly as described in any one of claims 1 to 7, and further includes a reaction chamber, the airflow ring assembly being disposed inside the reaction chamber, and the mounting base being connected to the inner wall of the reaction chamber.

9. The substrate processing apparatus according to claim 8, characterized in that, The substrate processing apparatus further includes a gas supply pipe connected to the gas source, and a plurality of first inflation pipes are connected in parallel to the gas supply pipe; or, the substrate processing apparatus further includes a plurality of gas supply pipes connected to the gas source, and each gas supply pipe is correspondingly connected to each of the first inflation pipes.

10. The substrate processing apparatus according to claim 8, characterized in that, The substrate processing device further includes a controller; a pressure detector is also provided on the first inflation tube; the flow regulating valve is a flow control valve, and the pressure regulating valve is a pressure control valve; the pressure detector, the flow regulating valve, and the pressure regulating valve are all electrically connected to the controller.

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