Short circuit test circuit
By designing a short-circuit test circuit, which utilizes a combination of multi-phase test modules and inductors, flexible switching between different short-circuit types is achieved, solving the problem of low test efficiency in existing technologies and improving test efficiency and consistency.
Patent Information
- Application Number
- CN202422660967.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-31
- Publication Date
- 2025-11-04
- Estimated Expiration
- 2034-10-31
AI Technical Summary
In existing technologies, short-circuit testing requires building test circuits one by one, which is cumbersome and inefficient, and is not suitable for large-scale testing.
Design a short-circuit test circuit that combines a multi-phase test module, a capacitor module, a discharge module, a first inductor, and a second inductor, and uses a control switch to flexibly switch between different short-circuit types, including Class I short circuit, Class II short circuit, and bridge arm short circuit tests.
It improves testing efficiency and consistency, reduces the impact of frequent inductor disassembly and replacement on the testing platform, and simplifies the testing process.
Smart Images
Figure CN223513327U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of dynamic short-circuit testing technology, and in particular to a short-circuit testing circuit. Background Technology
[0002] Short-circuit testing is mainly divided into two types: intra-arm short circuit (including Class I and Class II short circuits) and inter-arm short circuit. By testing these two types of short circuits, we can better understand the short-circuit performance of each test tube location, design targeted protection measures, and identify areas for optimization and improvement.
[0003] For each test tube location, different types of short-circuit tests are required. Existing technologies require building test circuits one by one, i.e., adjusting the size or position of inductors and the connections between different phases. This process is cumbersome and inefficient, and is not conducive to large-scale testing. Utility Model Content
[0004] To solve the above technical problems, this utility model provides a short-circuit test circuit.
[0005] The technical problem solved by this utility model can be achieved by the following technical solution:
[0006] A short-circuit test circuit, comprising:
[0007] A multi-phase test module, wherein the multi-phase test modules are connected in parallel between the positive and negative terminals of a power supply, and each phase test module includes a first test unit and a second test unit, which are connected in series, and the connection point between the first test unit and the second test unit in each phase test module has a node.
[0008] The nodes of the multiphase module under test are controllably connected pairwise;
[0009] A capacitor module is connected between the positive terminal and the negative terminal of the power supply.
[0010] A discharge module is controllably connected between the positive terminal and the negative terminal of the power supply;
[0011] A first inductor, one end of which is controllably connected to the node of each phase of the module under test, and the other end of which is controllably connected to the positive terminal and the negative terminal of the power supply.
[0012] The second inductor has one end controllably connected to the node of each phase of the module under test, and the other end controllably connected to the positive and negative terminals of the power supply.
[0013] Preferably, it further includes:
[0014] A first control switch, one end of which is connected to the discharge module, and the other end of which is connected to the negative terminal of the power supply.
[0015] Preferably, the multiphase test module is a three-phase test module, which includes a U-phase test module, a V-phase test module, and a W-phase test module;
[0016] The nodes of the test module in each phase include the first node of the U-phase test module, the second node of the V-phase test module, and the third node of the W-phase test module.
[0017] Preferably, it further includes:
[0018] A second control switch is connected between the first node and the first inductor;
[0019] A third control switch is connected between the second node and the first inductor;
[0020] A fourth control switch is connected between the third node and the first inductor;
[0021] The fifth control switch has one end connected to the positive terminal of the power supply, and the other end connected to the first inductor and the second inductor respectively.
[0022] A sixth control switch, one end of which is connected to the first inductor and the second inductor respectively, and the other end of which is connected to the negative terminal of the power supply;
[0023] The seventh control switch is connected between the first node and the second inductor;
[0024] The eighth control switch is connected between the second node and the second inductor;
[0025] The ninth control switch is connected between the third node and the second inductor;
[0026] The tenth control switch is connected between the first node and the second node;
[0027] The eleventh control switch is connected between the second node and the third node;
[0028] The twelfth control switch is connected between the first node and the third node.
[0029] Preferably, for the U-phase test module, the first test unit includes a first insulated-gate bipolar transistor, the drain of the first insulated-gate bipolar transistor is connected to the positive terminal of the power supply, and the source of the first insulated-gate bipolar transistor is connected to the first node;
[0030] The second unit under test includes a second insulated-gate bipolar transistor (IGBT), the drain of which is connected to the first node, and the source of which is connected to the negative terminal of the power supply.
[0031] Preferably, for the V-phase test module, the first test unit includes a third insulated-gate bipolar transistor, the drain of the third insulated-gate bipolar transistor is connected to the positive terminal of the power supply, and the source of the third insulated-gate bipolar transistor is connected to the second node;
[0032] The second unit under test includes a fourth insulated-gate bipolar transistor, the drain of which is connected to the second node, and the source of which is connected to the negative terminal of the power supply.
[0033] Preferably, for the W-phase test module, the first test unit includes a fifth insulated-gate bipolar transistor, the drain of the fifth insulated-gate bipolar transistor is connected to the positive terminal of the power supply, and the source of the fifth insulated-gate bipolar transistor is connected to the third node;
[0034] The second unit under test includes a sixth insulated-gate bipolar transistor (IGBT), the drain of which is connected to the third node, and the source of which is connected to the negative power supply.
[0035] Preferably, the first inductor is a copper busbar.
[0036] Preferably, the second inductor is a wire-wound inductor.
[0037] Preferably, the capacitor module includes a thin-film capacitor.
[0038] The advantages or beneficial effects of this utility model's technical solution are as follows:
[0039] The short-circuit test circuit of this invention can flexibly control connection and disconnection, and can switch between different short-circuit types. It eliminates the need to build test circuits for different short-circuit types, thereby improving test efficiency and consistency, while reducing the potential impact on the test platform caused by frequent disassembly and replacement of inductors. Attached Figure Description
[0040] Figure 1 This is a schematic diagram of a short-circuit test circuit in a preferred embodiment of the present invention. Detailed Implementation
[0041] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0042] It should be noted that, unless otherwise specified, the embodiments and features described in these embodiments can be combined with each other.
[0043] The present invention will be further described below with reference to the accompanying drawings and specific embodiments, but this is not intended to limit the present invention.
[0044] See Figure 1 In a preferred embodiment of this utility model, based on the above-mentioned problems existing in the prior art, a short-circuit test circuit for an IGBT module capable of switching different short-circuit types is provided, comprising:
[0045] A multi-phase test module is provided, with the multi-phase test modules connected in parallel between the positive and negative terminals of the power supply. Each phase test module includes a first test unit and a second test unit, which are connected in series. The connection between the first test unit and the second test unit in each phase test module has a node.
[0046] The nodes of the multiphase test module can be controlled to be connected in pairs;
[0047] Capacitor module C1 is connected between the positive and negative terminals of the power supply;
[0048] The discharge module is controllably connected between the positive and negative terminals of the power supply.
[0049] The first inductor L1 has one end controllably connected to the node of each phase of the module under test, and the other end controllably connected to the positive and negative terminals of the power supply.
[0050] The second inductor L2 has one end controllably connected to the node of each phase of the module under test, and the other end controllably connected to the positive and negative terminals of the power supply.
[0051] Specifically, the short-circuit test circuit of this utility model achieves a first type of short-circuit test by pairing the test unit of each phase test module with the first inductor L1; achieves a second type of short-circuit test by pairing the test unit of each phase test module with the second inductor L2; and achieves a bridge arm short-circuit test by connecting and disconnecting the nodes of the multi-phase test modules in pairs.
[0052] This circuit can flexibly control connection and disconnection, and can switch between different short circuit types. It eliminates the need to build test circuits for different short circuit types, improving test efficiency and consistency while reducing the potential impact on the test platform caused by frequent disassembly and replacement of inductors.
[0053] In this embodiment, it may further include: a DC power supply VCC, used to charge the entire test circuit. The positive terminal of the DC power supply VCC is the positive terminal of the aforementioned power supply, and the negative terminal of the DC power supply VCC is the negative terminal of the power supply.
[0054] In this embodiment, capacitor module C1 is used to store charge.
[0055] In this embodiment, the discharge module includes a discharge resistor R1, which is used to release the charge of the capacitor module C1 after the test is completed.
[0056] In a preferred embodiment, it further includes:
[0057] The first control switch S1 has one end connected to the discharge module and the other end connected to the negative terminal of the power supply.
[0058] Specifically, in this embodiment, the first control switch S1 controls the connection and disconnection between the discharge module and the positive and negative terminals of the power supply. Before the test is completed, the first control switch S1 is open; after the test is completed, the first control switch S1 is closed, thereby allowing the discharge module to release the charge from the capacitor module C1.
[0059] In a preferred embodiment, the multiphase test module is a three-phase test module, which includes a U-phase test module, a V-phase test module, and a W-phase test module.
[0060] The nodes of each phase test module include the first node of the U-phase test module, the second node of the V-phase test module, and the third node of the W-phase test module.
[0061] Specifically, in this embodiment, the nodes of the first and second units under test in the U-phase test module are denoted as the first node;
[0062] The nodes of the first and second units under test in the V-phase test module are denoted as the second node.
[0063] The nodes of the first and second units under test in the W-phase test module are denoted as the third node.
[0064] In each phase test module, the first test unit is the test unit of the upper bridge of that phase, and the second test unit is the test unit of the lower bridge of that phase.
[0065] This embodiment of the utility model takes a three-phase test module as an example, but it is not limited to this. The number of phases can be flexibly adjusted according to actual needs.
[0066] In a preferred embodiment, it further includes:
[0067] The second control switch S2 is connected between the first node of the U-phase module under test and the first inductor L1;
[0068] The third control switch S3 is connected between the second node of the V-phase module under test and the first inductor L1;
[0069] The fourth control switch S4 is connected between the third node of the W-phase module under test and the first inductor L1;
[0070] The fifth control switch S5 has one end connected to the positive terminal of the power supply, and the other end connected to the first inductor L1 and the second inductor L2 respectively.
[0071] The sixth control switch S6 has one end connected to the first inductor L1 and the second inductor L2, and the other end connected to the negative terminal of the power supply.
[0072] The seventh control switch S7 is connected between the first node and the second inductor L2 of the U-phase module under test;
[0073] The eighth control switch S8 is connected between the second node of the V-phase module under test and the second inductor L2;
[0074] The ninth control switch S9 is connected between the third node of the W-phase module under test and the second inductor L2;
[0075] The tenth control switch S10 is connected between the first node of the U-phase module under test and the second node of the V-phase module under test.
[0076] The eleventh control switch S11 is connected between the second node of the V-phase test module and the third node of the W-phase test module;
[0077] The twelfth control switch S12 is connected between the first node of the U-phase module under test and the third node of the W-phase module under test.
[0078] Specifically, by pairing the first and second units under test (DUTs) of each phase with their corresponding first inductors L1, a type I short-circuit test is performed on each DUT. In this type I short-circuit test, the on and off states of each control switch are as follows:
[0079] The second control switch S2 and the sixth control switch S6 are closed, and the other control switches are open, so as to perform a Class I short circuit test on the first test unit of the U-phase bridge.
[0080] The second control switch S2 and the fifth control switch S5 are closed, and the other control switches are open, so as to perform a Class I short circuit test on the second test unit of the U-phase lower bridge.
[0081] The third control switch S3 and the sixth control switch S6 are closed, and the other control switches are open, so as to perform a Class I short circuit test on the first test unit of the V-phase upper bridge.
[0082] The third control switch S3 and the fifth control switch S5 are closed, and the other control switches are open, so as to perform a Class I short circuit test on the second test unit of the V-phase lower bridge.
[0083] The fourth control switch S4 and the sixth control switch S6 are closed, and the other control switches are open, so as to perform a Class I short circuit test on the first test unit of the W phase upper bridge.
[0084] The fourth control switch S4 and the fifth control switch S5 are closed, and the other control switches are open, so as to perform a Class I short circuit test on the second unit under test of the W-phase lower bridge.
[0085] By pairing the first and second units under test (DUTs) of each phase with their corresponding second inductors L2, a Class II short-circuit test is performed on each DUT. In the Class II short-circuit test, the on and off states of each control switch are as follows:
[0086] The seventh control switch S7 and the sixth control switch S6 are closed, and the other control switches are open, so as to perform a Class II short circuit test on the first test unit of the U-phase bridge.
[0087] The seventh control switch S7 and the fifth control switch S5 are closed, and the other control switches are open, so as to perform a Class II short circuit test on the second test unit of the U-phase lower bridge;
[0088] The eighth control switch S8 and the sixth control switch S6 are closed, and the other control switches are open, so as to perform a Class II short circuit test on the first test unit of the V-phase upper bridge.
[0089] The eighth control switch S8 and the fifth control switch S5 are closed, and the other control switches are open, so as to perform a Class II short circuit test on the second test unit of the V-phase lower bridge;
[0090] The ninth control switch S9 and the sixth control switch S6 are closed, and the other control switches are open, so as to perform a Class II short circuit test on the first test unit of the W phase upper bridge.
[0091] The ninth control switch S9 and the fifth control switch S5 are closed, and the other control switches are open, so as to perform a Class II short circuit test on the second unit under test of the W-phase lower bridge.
[0092] Short-circuit tests are performed between each pair of bridge arms, also known as phase-to-phase short-circuit tests. The on and off states of each control switch during the phase-to-phase short-circuit test are as follows:
[0093] The tenth control switch S10 is closed, and the other control switches are open, so as to realize the phase-to-phase short circuit test between phase U and phase V;
[0094] The eleventh control switch S11 is closed, and the other control switches are open, so as to realize the phase-to-phase short circuit test between phase V and phase W;
[0095] The twelfth control switch S12 is closed, and the other control switches are open, so as to realize the phase-to-phase short circuit test between phase U and phase W.
[0096] In this embodiment, the first to twelfth control switches are all relays, which are simple to control and safe and reliable.
[0097] Insulated Gate Bipolar Transistor (IGBT) is a common power semiconductor device with advantages such as fast switching speed and low loss. It is widely used in new energy vehicles, photovoltaics, energy storage, welding machines and home appliances.
[0098] IGBTs are composite, fully controllable, voltage-driven power semiconductor devices composed of bipolar junction transistors (BJTs) and insulated-gate field-effect transistors (MOSFETs). Short-circuit faults may occur during use, severely affecting the normal operation of the equipment. Therefore, short-circuit testing is essential for evaluating IGBT module performance.
[0099] In this embodiment, the IGBT module is used as the test object. That is, in each phase of the test module, the first test unit is an insulated gate bipolar transistor, and the second test unit is also an insulated gate bipolar transistor.
[0100] In a preferred embodiment, for the U-phase test module, the first test unit includes a first insulated gate bipolar transistor Q1, the drain of the first insulated gate bipolar transistor Q1 is connected to the positive terminal of the power supply, and the source of the first insulated gate bipolar transistor Q1 is connected to the first node.
[0101] The second unit under test includes a second insulated-gate bipolar transistor Q2, the drain of which is connected to the first node, and the source of which is connected to the negative terminal of the power supply.
[0102] In a preferred embodiment, for the V-phase test module, the first test unit includes a third insulated gate bipolar transistor Q3, the drain of the third insulated gate bipolar transistor Q3 is connected to the positive terminal of the power supply, and the source of the third insulated gate bipolar transistor Q3 is connected to the second node.
[0103] The second unit under test includes a fourth insulated-gate bipolar transistor Q4. The drain of the fourth insulated-gate bipolar transistor Q4 is connected to the second node, and the source of the fourth insulated-gate bipolar transistor Q4 is connected to the negative terminal of the power supply.
[0104] In a preferred embodiment, for the W-phase test module, the first test unit includes a fifth insulated-gate bipolar transistor Q5, the drain of the fifth insulated-gate bipolar transistor Q5 is connected to the positive terminal of the power supply, and the source of the fifth insulated-gate bipolar transistor Q5 is connected to the third node.
[0105] The second unit under test includes a sixth insulated-gate bipolar transistor Q6. The drain of the sixth insulated-gate bipolar transistor Q6 is connected to the third node, and the source of the sixth insulated-gate bipolar transistor Q6 is connected to the negative terminal of the power supply.
[0106] Specifically, in this embodiment, a three-phase bridge circuit is formed using six insulated-gate bipolar transistors (IGBTs) as a three-phase test module. The first IGBT Q1, the third IGBT Q3, and the fifth IGBT Q5 serve as the three upper IGBTs in the three-phase bridge circuit; the second IGBT Q2, the fourth IGBT Q4, and the sixth IGBT Q6 serve as the three lower IGBTs in the three-phase bridge circuit.
[0107] The first node of the U-phase test module is the connection point between the source of the first insulated gate bipolar transistor Q1 and the drain of the second insulated gate bipolar transistor Q2.
[0108] The second node of the V-phase test module is the connection point between the source of the third insulated-gate bipolar transistor Q3 and the drain of the fourth insulated-gate bipolar transistor Q4.
[0109] The third node of the W-phase test module is the connection point between the source of the fifth insulated-gate bipolar transistor Q5 and the drain of the sixth insulated-gate bipolar transistor Q6.
[0110] In this embodiment, a type I short-circuit test is achieved by pairing each phase's IGBT with the first inductor L1; and a type II short-circuit test is achieved by pairing each phase's IGBT with the second inductor L2.
[0111] In a preferred embodiment, the first inductor L1 is a copper busbar.
[0112] Specifically, the first inductor L1 can be a copper busbar with an inductance value of approximately tens of nH.
[0113] In a preferred embodiment, the second inductor L2 is a wire-wound inductor.
[0114] Specifically, the second inductor L2 can be a wire-wound inductor, and its inductance value can be determined based on the desaturation current in the static data of the IGBT module being measured, or it can be determined based on the short-circuit current of a type of short-circuit test.
[0115] Specifically, the inductance value used for Class II short circuits is much larger than that for Class I short circuits. In this embodiment, the inductance value of the second inductor L2 is much larger than that of the first inductor L1.
[0116] In a preferred embodiment, the capacitor module C1 includes a thin-film capacitor.
[0117] In the preferred embodiment described above, the short-circuit test circuit is provided with a second to a twelfth control switch, a first inductor L1 and a second inductor L2. The eleven control switches are combined with the corresponding inductors in different ways to realize short-circuit tests for different test tube positions or different types of short circuits.
[0118] The first inductor L1 can be a copper busbar, which, together with the second control switch S2, the third control switch S3, the fourth control switch S4, the fifth control switch S5, and the sixth control switch S6, forms a short-circuit test circuit for each tube position.
[0119] The second inductor L2 can be a wire-wound inductor, which, together with the fifth control switch S5, the sixth control switch S6, the seventh control switch S7, the eighth control switch S8, and the ninth control switch S9, forms a Class II short-circuit test circuit for each tube position.
[0120] The ninth control switch S10, the tenth control switch S11, and the eleventh control switch S12 are combined to realize short circuit testing between different phases, i.e., phase-to-phase short circuit.
[0121] During the short-circuit test, the bridge arm short-circuit test can be achieved by using the second to ninth control switches in combination with the first inductor L1 and the second inductor L2, including Class I short circuit and Class II short circuit.
[0122] Table 1. Control switches corresponding to short circuits (including Class I and Class II short circuits) within the bridge arm.
[0123] Test tube position Control switch Short circuit type Control switch Short circuit type Q1 S2, S6 Class I short circuit S7, S6 Type II short circuit Q2 S2, S5 Class I short circuit S7, S5 Type II short circuit Q3 S3, S6 Class I short circuit S8, S6 Type II short circuit Q4 S3, S5 Class I short circuit S8, S5 Type II short circuit Q5 S4, S6 Class I short circuit S9, S6 Type II short circuit Q6 S4, S5 Class I short circuit S9, S5 Type II short circuit
[0124] Specifically, as shown in Table 1, by closing the second control switch S2 and the sixth control switch S6, a type I short circuit test can be performed on the first insulated gate bipolar transistor Q1 of the U-phase upper bridge; by closing the seventh control switch S7 and the sixth control switch S6, a type II short circuit test can be performed on the first insulated gate bipolar transistor Q1 of the U-phase upper bridge.
[0125] By closing the second control switch S2 and the fifth control switch S5, a Class I short-circuit test can be performed on the second insulated gate bipolar transistor Q2 of the U-phase lower bridge; by closing the seventh control switch S7 and the fifth control switch S5, a Class II short-circuit test can be performed on the second insulated gate bipolar transistor Q2 of the U-phase lower bridge.
[0126] By closing the third control switch S3 and the sixth control switch S6, a Class I short circuit test can be performed on the third insulated gate bipolar transistor Q3 of the V-phase upper bridge; by closing the eighth control switch S8 and the sixth control switch S6, a Class II short circuit test can be performed on the third insulated gate bipolar transistor Q3 of the V-phase upper bridge.
[0127] By closing the third control switch S3 and the fifth control switch S5, a Class I short circuit test can be performed on the fourth insulated gate bipolar transistor Q4 of the V-phase lower bridge; by closing the eighth control switch S8 and the fifth control switch S5, a Class II short circuit test can be performed on the fourth insulated gate bipolar transistor Q4 of the V-phase lower bridge.
[0128] By closing the fourth control switch S4 and the sixth control switch S6, a Class I short circuit test can be performed on the fifth insulated gate bipolar transistor Q5 of the W-phase upper bridge; by closing the ninth control switch S9 and the sixth control switch S6, a Class II short circuit test can be performed on the fifth insulated gate bipolar transistor Q5 of the W-phase upper bridge.
[0129] By closing the fourth control switch S4 and the fifth control switch S5, a Class I short-circuit test can be performed on the sixth insulated-gate bipolar transistor Q6 of the W-phase lower bridge; by closing the ninth control switch S9 and the fifth control switch S5, a Class II short-circuit test can be performed on the sixth insulated-gate bipolar transistor Q6 of the W-phase lower bridge.
[0130] During the short-circuit test, the phase-to-phase short-circuit test can be achieved by controlling the on / off state of the tenth to twelfth control switches, i.e., bridge arm short circuit, also known as phase-to-phase short circuit.
[0131] Table 2. Control switches corresponding to phase-to-phase short-circuit tests.
[0132] Test phase Control switch Short circuit type U-phase and V-phase S10 Phase-to-phase short circuit V phase and W phase S11 Phase-to-phase short circuit U phase and W phase S12 Phase-to-phase short circuit
[0133] Specifically, as shown in Table 2, closing the tenth control switch S10 can achieve phase-to-phase short circuit testing between phase U and phase V; closing the eleventh control switch S11 can achieve phase-to-phase short circuit testing between phase V and phase W; and closing the twelfth control switch S12 can achieve phase-to-phase short circuit testing between phase U and phase W.
[0134] By simply switching the switch, short-circuit tests can be performed on different positions and with different short-circuit types in the IGBT module, avoiding the need to build test circuits one by one. This improves test efficiency and consistency, and reduces the impact of frequent inductor disassembly and replacement on the test platform.
[0135] Furthermore, the short-circuit test circuit of this utility model embodiment can also realize double-pulse testing for different transistor positions. Simply select a suitable inductor according to the test requirements of double-pulse testing, and then replace the first inductor L1 or the second inductor L2, and combine it with the corresponding control switch to realize double-pulse testing for different transistor positions.
[0136] Specifically, during the dual-pulse test, the gate of the IGBT under test needs to be connected to a pulse generator. The IGBT test unit is then subjected to pulse testing through the pulse generator and the short-circuit test circuit in this embodiment.
[0137] The advantages or beneficial effects of adopting the above technical solution are as follows: This utility model provides an IGBT module short-circuit test circuit that can switch between different short-circuit types, and can also switch the test tube positions. It can perform a type I short-circuit test by controlling the second to sixth control switches and forming a three-phase bridge module with the corresponding first inductor to form a type II short-circuit test with the corresponding second inductor to form a three-phase bridge module with the six tubes; and switch the tenth to twelfth control switches to switch between phase-to-phase short-circuit tests between different phases. It eliminates the need to build test circuits for different short-circuit types, improves test efficiency and consistency, and reduces the potential impact on the test platform caused by frequent disassembly and replacement of inductors.
[0138] Specifically, this embodiment is only an example of the present invention and is not intended to limit the number of IGBT test units in the present invention, nor is it intended to limit the implementation method and protection scope of the present invention.
[0139] The above are merely preferred embodiments of the present utility model and are not intended to limit the implementation methods and protection scope of the present utility model. Those skilled in the art should realize that any equivalent substitutions and obvious changes made using the content of this specification and illustrations should be included within the protection scope of the present utility model.
Claims
1. A short-circuit test circuit, characterized in that, include: A multi-phase test module, wherein the multi-phase test modules are connected in parallel between the positive and negative terminals of a power supply, and each phase test module includes a first test unit and a second test unit, which are connected in series, and the connection point between the first test unit and the second test unit in each phase test module has a node. The nodes of the multiphase module under test are controllably connected pairwise; A capacitor module is connected between the positive terminal and the negative terminal of the power supply. A discharge module is controllably connected between the positive terminal and the negative terminal of the power supply; A first inductor, one end of which is controllably connected to the node of each phase of the module under test, and the other end of which is controllably connected to the positive terminal and the negative terminal of the power supply. The second inductor has one end controllably connected to the node of each phase of the module under test, and the other end controllably connected to the positive and negative terminals of the power supply.
2. The short-circuit test circuit according to claim 1, characterized in that, Also includes: A first control switch, one end of which is connected to the discharge module, and the other end of which is connected to the negative terminal of the power supply.
3. The short-circuit test circuit according to claim 1, characterized in that, The multiphase test module is a three-phase test module, which includes a U-phase test module, a V-phase test module, and a W-phase test module. The nodes of the test module in each phase include the first node of the U-phase test module, the second node of the V-phase test module, and the third node of the W-phase test module.
4. The short-circuit test circuit according to claim 3, characterized in that, Also includes: A second control switch is connected between the first node and the first inductor; A third control switch is connected between the second node and the first inductor; A fourth control switch is connected between the third node and the first inductor; The fifth control switch has one end connected to the positive terminal of the power supply, and the other end connected to the first inductor and the second inductor respectively. A sixth control switch, one end of which is connected to the first inductor and the second inductor respectively, and the other end of which is connected to the negative terminal of the power supply; The seventh control switch is connected between the first node and the second inductor; The eighth control switch is connected between the second node and the second inductor; The ninth control switch is connected between the third node and the second inductor; The tenth control switch is connected between the first node and the second node; The eleventh control switch is connected between the second node and the third node; The twelfth control switch is connected between the first node and the third node.
5. The short-circuit test circuit according to claim 3, characterized in that, For the U-phase test module, the first test unit includes a first insulated-gate bipolar transistor, the drain of the first insulated-gate bipolar transistor is connected to the positive terminal of the power supply, and the source of the first insulated-gate bipolar transistor is connected to the first node; The second unit under test includes a second insulated-gate bipolar transistor (IGBT), the drain of which is connected to the first node, and the source of which is connected to the negative terminal of the power supply.
6. The short-circuit test circuit according to claim 3, characterized in that, For the V-phase test module, the first test unit includes a third insulated-gate bipolar transistor, the drain of the third insulated-gate bipolar transistor is connected to the positive terminal of the power supply, and the source of the third insulated-gate bipolar transistor is connected to the second node; The second unit under test includes a fourth insulated-gate bipolar transistor, the drain of which is connected to the second node, and the source of which is connected to the negative terminal of the power supply.
7. The short-circuit test circuit according to claim 3, characterized in that, For the W-phase test module, the first test unit includes a fifth insulated-gate bipolar transistor, the drain of the fifth insulated-gate bipolar transistor is connected to the positive terminal of the power supply, and the source of the fifth insulated-gate bipolar transistor is connected to the third node; The second unit under test includes a sixth insulated-gate bipolar transistor (IGBT), the drain of which is connected to the third node, and the source of which is connected to the negative power supply.
8. The short-circuit test circuit according to claim 1, characterized in that, The first inductor is a copper busbar.
9. The short-circuit test circuit according to claim 1, characterized in that, The second inductor is a wire-wound inductor.
10. The short-circuit test circuit according to claim 1, characterized in that, The capacitor module includes a thin-film capacitor.