Radial multilayer chip varistor
By using L-shaped leads and an encapsulated curing layer, the design solves the problem of inconvenient installation of traditional radial multilayer chip varistors, achieving a fixed lead spacing for easy installation, enhancing voltage suppression and bending resistance, making it suitable for high-density integrated circuits, and providing low-voltage, moisture-proof, and arc-proof capabilities, thus extending its service life.
Patent Information
- Application Number
- CN202422746068.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-11
- Publication Date
- 2025-11-07
- Estimated Expiration
- 2034-11-11
AI Technical Summary
The lead design of traditional radial multilayer chip varistors makes installation inconvenient, especially on high-density integrated circuit boards where they are prone to interference with other components, affecting layout efficiency.
The L-shaped lead design is adopted, combined with the encapsulation and curing layer and the internal electrode structure. The long connection end of the lead is parallel to the end face of the varistor body. The encapsulation and curing layer is made of resin. The internal electrodes are staggered and filled with a dielectric layer between the end electrodes. The end electrodes are Ag layers. The thickness of the encapsulation and curing layer is 30-90μm and the shape is circular.
It achieves a fixed pin spacing, which facilitates installation, improves installation efficiency, enhances voltage suppression capability and bending resistance, is suitable for high-density integrated circuits, solves the problem that traditional designs cannot achieve low voltage, has moisture-proof and arc-proof capabilities, and extends service life.
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Figure CN223526948U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to electronic components technical field, concretely is a radial multilayer chip type voltage-dependent resistor. BACKGROUND
[0002] With the rapid development of electronic technology, various electronic devices have higher and higher requirements for power stability, especially in the face of transient overvoltage, effective voltage suppression measures are particularly important. Radial multilayer chip type voltage-dependent resistor as a common overvoltage protection element has been widely used in various electronic products. It can quickly respond when abnormal high voltage appears in the circuit, and limit the excessive voltage in a safe range through the change of its own resistance, so as to protect other components in the circuit from damage.
[0003] The traditional radial voltage-dependent resistor is mainly composed of metal oxide material, and its basic structure includes one or more voltage suppression units, which are usually connected to the external circuit through the electrodes at both ends. However, most traditional radial multilayer chip type voltage-dependent resistors adopt a vertical lead design, that is, the axis of the lead is perpendicular to the end face of the voltage-dependent resistor body. Although this design is simple, it may cause inconvenience in installation in some cases, especially on high-density integrated circuit boards, which is prone to interference with other components, affecting layout efficiency. SUMMARY
[0004] In view of the shortcomings of the prior art, the utility model provides a radial multilayer chip type voltage-dependent resistor, which solves the problem of fixed foot distance of part of the radial multilayer chip type voltage-dependent resistor in the prior art, causing inconvenience in installation.
[0005] A radial multilayer chip type voltage-dependent resistor comprises a voltage-dependent resistor body, an end electrode provided on the end face of the voltage-dependent resistor body, an encapsulation and curing layer covering the surface of the voltage-dependent resistor body, and a lead in L shape, comprising a long connecting end and a short connecting end, the short connecting end close to the voltage-dependent resistor body penetrates through the encapsulation and curing layer and is connected with the end electrode, and the long connecting end is parallel to the end face of the voltage-dependent resistor body.
[0006] Preferably, the lead is a copper-zinc alloy lead.
[0007] Preferably, the encapsulation and curing layer is a resin encapsulation and curing layer.
[0008] Preferably, the piezoresistor body comprises a plurality of inner electrodes and two opposite end electrodes arranged at two ends, the end electrodes are arranged with the plurality of inner electrodes therebetween, one end of any inner electrode is connected with one end electrode, a gap exists between the other end of the inner electrode and the other end electrode, and the adjacent two inner electrodes are arranged staggered.
[0009] Further, the end electrode is an Ag layer end electrode.
[0010] Preferably, a dielectric layer is arranged between the two inner electrodes.
[0011] Preferably, the outer side of the end electrode is provided with a Ni / Sn layer.
[0012] Preferably, the thickness of the encapsulation and curing layer is 30-90 μm.
[0013] Preferably, the end face shape of the encapsulation and curing layer is circular and the diameter is less than or equal to 10 mm.
[0014] Compared with the prior art, the piezoresistor has the following beneficial effects:
[0015] The radial multilayer piezoresistor comprises a piezoresistor body, an encapsulation and curing layer, and an L-shaped lead wire, and the long connecting end of the lead wire is parallel to the end face of the piezoresistor body. The lead wire arrangement in the present application fixes the foot distance between the two lead wires, facilitating the installation of the resistor. At the same time, the power of the resistor is large, and the relative voltage can also be made lower, so that the radial multilayer piezoresistor is suitable for switch circuit power protection devices and the like. Secondly, by combining the encapsulation and curing layer and the like, the limitations of the traditional round piezoresistor (single layer structure) that cannot realize low voltage due to dry pressing forming are solved, the working voltage can be 3.3V-560V, and the piezoresistance voltage can be 5-680V, which solves the problems of moisture resistance and arc prevention, and the bending resistance is significantly improved. BRIEF DESCRIPTION OF DRAWINGS
[0016] Figure 1 The radial multilayer piezoresistor is shown in the structure diagram.
[0017] Among them:
[0018] 10-piezoresistor body, 20-end electrode, 30-encapsulation and curing layer, 40-lead wire, 41-long connecting end, 42-short connecting end, 70-inner electrode, 80-dielectric layer, 90-Sn layer. DETAILED DESCRIPTION
[0019] The embodiments described below are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.
[0020] Referring to Figure 1 The embodiment provides a radial multilayer chip varistor, which comprises a varistor body 10, an end surface of the varistor body 10 being provided with an end electrode 20, an encapsulation curing layer 30 covering a surface of the varistor body 10, and a lead 40, the lead 40 being L-shaped and comprising a long connecting end 41 and a short connecting end 42, the short connecting end 42 close to the varistor body 10 penetrating through the encapsulation curing layer 30 and being connected with the end electrode 20, and the long connecting end 41 being parallel to the end surface of the varistor body 10.
[0021] Preferably, the lead 40 is a lead 40 made of copper-zinc alloy, so that the lead 40 has good conductivity and bending strength.
[0022] Preferably, the encapsulation curing layer 30 is an encapsulation curing layer 30 made of resin, which not only has high bending strength, but also has excellent wear resistance and moisture resistance, effectively protects the radial multilayer chip varistor from external physical damage and environmental influence, and ensures long-term stability and reliability.
[0023] Preferably, the varistor body 10 comprises a plurality of inner electrodes 70 and two opposite end electrodes 20 arranged at two ends, the plurality of inner electrodes 70 being arranged between the two end electrodes 20, one end of any inner electrode 70 being connected with one end electrode 20, a gap being present between the other end of the inner electrode 70 and the other end electrode 20, and adjacent two inner electrodes 70 being arranged in a staggered manner. Not only does the radial multilayer chip varistor improve the nonlinear coefficient and enhance the voltage suppression capability, but also reduces the local overheating phenomenon by dispersing the current, improves the thermal stability and long-term reliability. In addition, the gap between the adjacent inner electrodes 70 and the staggered arrangement optimize the electrical performance, so that the radial multilayer chip varistor can maintain stable performance under different working voltages, and increase the effective working area, improve the power handling capability, so that it can also work stably in a high-energy pulse environment, prolonging the service life.
[0024] Further, the end electrode 20 is an Ag layer end electrode 20. Silver (Ag) material has excellent electrical conductivity and solderability, which can ensure good electrical contact and reliable connection, thereby improving the electrical conductivity and overall reliability of the radial multilayer chip varistor. In addition, the silver layer end electrode 20 also has good oxidation resistance and corrosion resistance, which can work stably for a long time under various environmental conditions, prolonging the service life of the radial multilayer chip varistor.
[0025] Preferably, a dielectric layer 80 is filled between the two inner electrodes 70. Preferably, the side of the end electrode 20 is provided with a Ni layer or a Sn layer 90.
[0026] Preferably, the thickness of the encapsulation and curing layer 30 is 30-90 μm. Limiting the thickness of the encapsulation and curing layer 30 within this range makes the encapsulation and curing layer 30 have a suitable thickness, which on the one hand can prevent the encapsulation and curing layer 30 from being too thin, resulting in exposed or holes on the surface of the resistor body, affecting the encapsulation and curing effect; on the other hand, it can prevent the encapsulation and curing layer 30 from being too thick, so that the overall size of the resistor body after encapsulation and curing is too large, which is not suitable for installation and application in high-density integrated electronic components. The thickness range of 30-90 μm not only provides sufficient mechanical strength and insulation performance to protect the radial multilayer chip varistor from external physical damage, but also optimizes its layout and installation in a narrow space, improving the stability and reliability of the overall circuit.
[0027] Preferably, the end face shape of the encapsulation and curing layer 30 is circular and the diameter is less than or equal to 10 mm. Setting the end face shape of the encapsulation and curing layer 30 to be circular facilitates the installation and positioning of the radial multilayer chip varistor, improving the installation efficiency and accuracy. Further, limiting the diameter within the range of less than or equal to 10 mm makes the radial multilayer chip varistor have a suitable size, which can better adapt to the requirements of high-density integrated circuit boards and narrow spaces, providing higher installation convenience and flexibility.
[0028] The utility model provides a radial multilayer sheet type pressure sensitive resistor, contain a pressure sensitive resistor body 10, a package solidification layer 30 and L shape's lead 40, long connecting end 41 of lead 40 is parallel with the end face of pressure sensitive resistor body 10. The lead 40 setting mode in the application makes the foot distance between two leads 40 fixed, and facilitates the installation of resistor, and simultaneously, the power of resistor is bigger, and the relative voltage can also be made lower, so that the radial multilayer sheet type pressure sensitive resistor is suitable for switch circuit power supply and other protection devices. Secondly, by combining the package solidification layer 30 and other structures, the utility model also solves the limitation that the traditional round sheet radial pressure sensitive resistor cannot realize low voltage due to dry pressing forming, can realize the use range of working voltage 3.3V-560V and pressure sensitive voltage 5-680V, relatively solves the problems of moisture-proof and anti-flying arc, and the bending resistance is significantly improved.
[0029] The above only discloses several preferred embodiments of the utility model, and of course cannot limit the scope of the utility model, so equivalent changes made in the scope of the utility model patent application still belong to the scope covered by the utility model.
Claims
1. A radial multilayer chip varistor, characterized by: It comprises: a pressure sensitive resistor body, an end surface of the pressure sensitive resistor body is provided with an end electrode; an encapsulation curing layer, the encapsulation curing layer covers the surface of the pressure sensitive resistor body; and a lead, the lead is L-shaped, comprising a long connecting end and a short connecting end, the short connecting end close to the pressure sensitive resistor body penetrates through the encapsulation curing layer and is connected with the end electrode, and the long connecting end is parallel to the end surface of the pressure sensitive resistor body.
2. The radial multilayer chip varistor of claim 1, wherein, The lead is a lead made of copper-zinc alloy.
3. The radial multilayer chip varistor of claim 1, wherein, The encapsulation curing layer is a lead made of resin.
4. The radial multilayer chip varistor according to any one of claims 1 to 3, wherein The pressure sensitive resistor body comprises a plurality of inner electrodes and two opposite end electrodes arranged at two ends, the end electrodes are stacked and arranged with the plurality of inner electrodes therebetween, one end of any inner electrode is connected with one end electrode, a gap exists between the other end of the inner electrode and the other end electrode, and the adjacent two inner electrodes are arranged in staggered manner.
5. The radial multilayer chip varistor of claim 4, wherein, The end electrode is an Ag layer end electrode.
6. The radial multilayer chip varistor of claim 4, wherein, A dielectric layer is arranged between the two inner electrodes.
7. The radial multilayer chip varistor of claim 1, wherein, An outer side of the end electrode is provided with a Ni / Sn layer.
8. The radial multilayer chip varistor of claim 1, wherein, The thickness of the encapsulation curing layer is 30-90 μm.
9. The radial multilayer chip varistor of claim 1, wherein, The end surface shape of the encapsulation curing layer is circular and the diameter is less than or equal to 10 mm.