Ion source arc chamber, ion source and ion implantation equipment

Abstract

The utility model relates to the technical field of semiconductor manufacturing, and provides an ion source arc chamber, an ion source and ion implantation equipment. The arc chamber main body is provided with an inner cavity; the arc chamber main body comprises a first outer side plate and a first inner side plate assembly; a first mounting hole is formed in the first outer side plate; the first inner side plate assembly is made of a non-metal material and comprises a first inner side plate, the first inner side plate is attached to the inner side of the first outer side plate, and a second mounting hole right opposite to the first mounting hole is formed in the first inner side plate. According to the configuration, the first inner side plate is attached to the inner side of the first outer side plate, so that generation of compounds around the cathode is reduced, sediment on the cathode is reduced, and the phenomena of short circuit and uneven ion beams are improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor manufacturing, especially to a kind of ion source arc chamber, ion source and ion implantation equipment. BACKGROUND

[0002] Ion implantation is a very important doping technology in modern integrated circuit manufacturing, which injects doping elements into semiconductor wafers by ion implantation equipment in the form of ion acceleration, changes its conductive characteristics and finally forms the required device structure. Ion implantation equipment generally includes ion source, ion extraction and mass analyzer, acceleration tube, scanning system, process cavity and high vacuum system, the high vacuum system is used to form a negative pressure environment in its process cavity, the ion source generates ion beam and separates impurity ions through ion extraction and mass analyzer, then the ion beam is accelerated through the acceleration tube and enters the process cavity to bombard the wafer surface, realizing ion implantation.

[0003] Ion implantation equipment mainly generates hot electrons by cathode, and generates plasma by hot electron impact on doping source gas in arc chamber, and then ion implantation is completed by the potential energy difference of the plasma extracted and implanted into silicon wafer.

[0004] Since the arc chamber needs to withstand high temperature, the material of the arc chamber usually contains tungsten alloy to meet the chamber environment. However, fluorine ions generated after dissociation of doping source gas are easy to produce tungsten fluoride product with tungsten, which will slowly accumulate near the mounting hole of the arc chamber over time, and then cause the components (such as cathode or reflector) in the mounting hole to contact the inner wall of the arc chamber and cause short circuit. If short circuit occurs, ion source replacement is required to continue production. Moreover, the deposition of the product on the cathode also causes the uniformity of the ion beam to decrease.

[0005] Therefore, the utility model provides an ion source arc chamber, ion source and ion implantation equipment to improve the above-mentioned short circuit and ion beam uniformity decrease caused by product accumulation. UTILITY MODEL CONTENTS

[0006] The utility model aims at providing an ion source arc chamber, ion source and ion implantation equipment to improve the above-mentioned short circuit and ion beam uniformity decrease caused by product accumulation.

[0007] The utility model provides an ion source arc chamber, which comprises an arc chamber main body.

[0008] The arc chamber main body has an inner cavity.

[0009] The arc chamber main body comprises a first outer side plate and a first inner side plate assembly.

[0010] The first outer side plate is provided with a first mounting hole, which is a cathode mounting hole or a reflector mounting hole.

[0011] The first inner side plate assembly is made of a non-metal material, and includes a first inner side plate which is attached to a side of the first outer side plate close to the inner cavity, and is provided with a second mounting hole opposite to the first mounting hole.

[0012] Optionally, the first inner side plate assembly further includes a first inner sleeve connected to a side of the first inner side plate away from the inner cavity and in communication with the second mounting hole, and the first inner sleeve extends into the first mounting hole.

[0013] Optionally, an outer wall of the first inner sleeve is attached to an inner wall of the first mounting hole.

[0014] And / or, a dimension of the first inner sleeve in an axial direction thereof is the same as a wall thickness of the first outer side plate.

[0015] Optionally, the arc chamber body includes a second outer side plate and a second inner side plate assembly.

[0016] The second outer side plate is provided with a third mounting hole.

[0017] The second inner side plate assembly is made of a non-metal material, and includes a second inner side plate which is attached to a side of the second outer side plate close to the inner cavity, and is provided with a fourth mounting hole opposite to the third mounting hole.

[0018] Optionally, the second inner side plate assembly further includes a second inner sleeve connected to a side of the second inner side plate away from the inner cavity and in communication with the fourth mounting hole, and the second inner sleeve extends into the third mounting hole.

[0019] Optionally, an outer wall of the second inner sleeve is attached to an inner wall of the third mounting hole.

[0020] And / or, a dimension of the second inner sleeve in an axial direction thereof is the same as a wall thickness of the second outer side plate.

[0021] Optionally, the first outer side plate and the second outer side plate are arranged in parallel and opposite to each other.

[0022] Optionally, the first inner side plate assembly is made of a graphite material.

[0023] And / or, when the arc chamber body includes a second outer side plate and a second inner side plate assembly, the second inner side plate assembly is made of a graphite material.

[0024] And / or, when the arc chamber body includes a second outer side plate and a second inner side plate assembly, one of the first mounting hole and the third mounting hole is a cathode mounting hole, and the other is a reflector mounting hole.

[0025] The utility model also provides an ion source, the ion source is installed above described ion source arc chamber.

[0026] The utility model also provides an ion implantation equipment, its characterized in being that the ion implantation equipment is installed above described ion source.

[0027] So configure, above described ion source arc chamber, first inner side plate is attached to the inside of first outer side plate, it is helpful to isolate electron and ion in arc chamber body inner chamber, because first inner side plate is made of nonmetal material, so first inner side plate itself will not be excited to form metal ion, and because first outer side plate is isolated, so first outer side plate will not be excited to form tungsten ion. So make first outer side plate with mounting hole will not produce tungsten fluoride product due to excitation and form tungsten ion, therefore, reduce the generation of compound around first mounting hole, further reduce the deposit around first mounting hole, to improve the short circuit of component in first mounting hole and the phenomenon of ion beam uneven. BRIEF DESCRIPTION OF DRAWINGS

[0028] Figure 1 It is the schematic diagram of product that present ion source arc chamber generates;

[0029] Figure 2 It is the structure schematic diagram of ion source arc chamber of an embodiment of the utility model;

[0030] Figure 3 It is the cross section structure schematic diagram of first inner side plate assembly of an embodiment of the utility model;

[0031] Figure 4 It is the main view structure schematic diagram of first inner side plate assembly of an embodiment of the utility model;

[0032] Figure 5 It is the cross section structure schematic diagram of second inner side plate assembly of an embodiment of the utility model;

[0033] Figure 6 It is the main view structure schematic diagram of second inner side plate assembly of an embodiment of the utility model.

[0034] In the drawings:

[0035] 10 - arc chamber body; 11 - first outer side plate; 111 - first mounting hole; 12 - first inner side plate assembly; 121 - first inner side plate; 122 - first inner bushing; 123 - second mounting hole; 13 - second outer side plate; 131 - third mounting hole; 14 - second inner side plate assembly; 141 - second inner side plate; 142 - second inner bushing; 143 - fourth mounting hole;

[0036] 20 - cathode;

[0037] 30 - reflectron. DETAILED DESCRIPTION

[0038] The ion source arc chamber, ion source and ion implantation equipment according to the present application will be further described below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present application will be more apparent according to the following description. It should be noted that the accompanying drawings are all in a very simplified form and all use non-precise proportions, only for the purpose of facilitating and clarifying the purpose of assisting in the description of the embodiments of the present application.

[0039] As used in the present application, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. The term "or" is generally employed in its sense including "and / or" unless the context clearly dictates otherwise. The term "at least two" or "a plurality of" is generally employed in its sense including "two or more" unless the context clearly dictates otherwise. In addition, the terms "first," "second," "third," etc. are used only to describe the order of the features and not to indicate or imply relative importance or a number of the indicated features. Thus, features defined with "first," "second," "third," etc. can explicitly or implicitly include one or at least two of the features. In addition, as used in the present application, "mounting," "connected," "connection," an element "disposed" in another element should be interpreted in a broad sense, generally only indicating that there is a connection, coupling, cooperation or transmission relationship between the two elements, and the two elements can be directly or indirectly connected, coupled, cooperated or transmitted through intermediate elements, and cannot be understood as indicating or implying the spatial position relationship between the two elements, i.e. one element can be in any arbitrary direction inside, outside, above, below or one side of another element, unless the content is otherwise clearly indicated. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances. In addition, directional terms such as above, below, up, down, upward, downward, left, right, etc. are used with respect to the exemplary embodiments as they are shown in the drawings, upward or upward direction is toward the top of the corresponding drawing, and downward or downward direction is toward the bottom of the corresponding drawing.

[0040] In the ion source, since the arc chamber 10 needs to withstand high temperature, the working temperature of the arc chamber 10 is usually higher than 1000℃, so the material of the arc chamber 10 usually adopts tungsten alloy to meet the chamber environment.

[0041] In the dissociation process of the ion source, the molecules of the fluorine-containing gas (commonly used fluorine-containing gas is BF3, GeF4) will collide with hot electrons in the arc chamber 10 to dissociate fluorine ions, and will collide with the cavity wall of the arc chamber 10 to excite tungsten ions. The tungsten ions will combine with the fluorine ions after the dissociation of the fluorine-containing gas to generate products such as fluorine-containing compounds.

[0042] The chemical reaction of the fluorine-containing compound is as follows:

[0043] W+Fx→WFx;

[0044] WFx→W+WFy+Fz;

[0045] Please refer to Figure 1 The above products will deposit along the cavity wall. When the tungsten ions are excited on the cavity wall close to the cathode 20, the generated fluorine-containing compounds are easy to deposit on the cavity wall and the cathode 20, and the products will slowly accumulate on the cavity wall over time, causing the cavity wall to swell. The products will also accumulate on the outer wall of the cathode 20, causing the cathode to swell, and then the cathode 20 will contact the cavity wall of the arc chamber 10 to cause short circuit. If short circuit occurs, machine maintenance and replacement of the ion source are required to continue production. Moreover, as Figure 1 shown, the swelling of the cathode 20 affects the generation of hot electrons of the cathode, so it also affects the generation of plasma, and therefore the deposition of fluorine-containing compounds also causes the uniformity of the ion beam to decrease.

[0046] Similarly, when the tungsten ions are excited on the cavity wall close to the reflector 30, the generated fluorine-containing compounds are easy to deposit on the cavity wall and the reflector 30. The products will slowly accumulate on the cavity wall over time, causing the cavity wall to swell. The products will also accumulate on the outer wall of the reflector, causing the reflector 30 to swell, which also affects the normal operation of the machine and the uniformity of the ion beam.

[0047] In addition, if the cathode and the reflector are also made of tungsten alloy material, the cathode and the reflector will also be excited to generate tungsten ions, further exacerbating the swelling phenomenon of the cathode and the reflector due to the attachment of the products.

[0048] Based on this, the embodiment provides an ion source arc chamber, please refer to Figure 2 shown, the ion source arc chamber comprises an arc chamber body 10;

[0049] The arc chamber body 10 has an inner cavity;

[0050] In the embodiment, the arc chamber body 10 is in the shape of a long strip, so that the inner cavity thereof is in the shape of a long strip. Preferably, the arc chamber body 10 is in the shape of a cuboid, and the structure of the arc chamber body 10 can be consistent with the existing structure.

[0051] Please continue to refer to Figure 2 As shown, the arc chamber body 10 comprises a first outer side plate 11 and a first inner side plate assembly 12. The first outer side plate 11 and the first inner side plate assembly 12 are located at one side of the arc chamber body 10 along the length direction thereof.

[0052] The first outer side plate 11 is provided with a first mounting hole 111; the first outer side plate 11 is consistent with the material of the existing arc chamber body 10, for example, tungsten-containing alloy is used to meet the requirement of high temperature resistance of the chamber.

[0053] The first mounting hole 111 can be used for mounting a cathode or a reflector. In the embodiment, the first mounting hole 111 is used for mounting a cathode as a cathode mounting hole.

[0054] In other alternative embodiments, the first mounting hole 111 is used for mounting a reflector as a reflector mounting hole.

[0055] The first inner side plate assembly 12 is made of a non-metal material, and the first inner side plate assembly 12 is made of a high-temperature-resistant material that meets the use requirement of the arc chamber body 10. In the embodiment, the first inner side plate assembly 12 is made of graphite material, which on the one hand ensures a low material cost, and on the other hand prevents the first inner side plate assembly 12 from being excited to generate metal ions to combine with fluorine ions after the dissociation of fluorine-containing gas to generate a compound.

[0056] The first inner side plate assembly 12 comprises a first inner side plate 121, which is attached to the inner side of the first outer side plate 11. Here, the inner side refers to the side of the first outer side plate 11 close to the inner cavity of the arc chamber body 10.

[0057] The first inner side plate 121 is provided with a second mounting hole 123 opposite to the first mounting hole 111, and the two are arranged opposite to each other to form a mounting hole for mounting a cathode.

[0058] The first inner side plate 121 is attached to the inner side of the first outer side plate 11, which helps to isolate the electrons and ions in the inner cavity of the arc chamber body 10. Since the first inner side plate 121 is made of a non-metal material, the first inner side plate 121 itself will not be excited to generate metal ions. Since the first outer side plate 11 is isolated, the first outer side plate 11 will not be excited to generate tungsten ions. Therefore, the side plate for mounting the cathode will not generate tungsten fluoride due to excitation, thereby reducing the generation of compounds around the cathode, further reducing the deposition on the cathode, and improving the phenomenon of short circuit and uneven ion beam.

[0059] In this embodiment, the first inner side plate 121 is attached to and fixed relative to the first outer side plate 11 by bonding, clamping or other known connecting means.

[0060] In this embodiment, the structure of the first outer side plate 11 is consistent with the existing outer side plate of the arc chamber body 10 used for mounting the cathode side, and the first inner side plate 121 is attached to the inner side of the first outer side plate 11, and the first inner side plate 121 is preferably completely covered on the inner side of the first outer side plate 11 to completely isolate the first outer side plate 11 from the chamber. The shape and structure of the first inner side plate 121 can be adapted to the actual structure of the first outer side plate 11.

[0061] Please continue to refer to Figure 2 As shown, the first inner side plate assembly 12 further comprises a first inner sleeve 122 connected to the outer side of the first inner side plate 121 and communicating with the second mounting hole 123, and the first inner sleeve 122 extends into the first mounting hole 111.

[0062] In this embodiment, the first inner side plate 121 and the first inner sleeve 122 are integrally formed, and the outer wall of the first inner sleeve 122 is attached to the inner wall of the first mounting hole 111; therefore, the first inner sleeve 122 protects the inner wall of the first mounting hole 111 to prevent the inner wall of the first mounting hole 111 from being in contact with electrons or ions in the inner cavity of the arc chamber body 10 to cause excitation to form tungsten ions.

[0063] Please refer to Figure 3 and Figure 4 As shown, in this embodiment, the inner circumferential surface of the first inner sleeve 122 has a radius R1, and the outer circumferential surface has a radius R2, where R2 = R1 + a, where a is the wall thickness of the first inner side plate 121, and the radius R1 is consistent with the radius of the cathode mounting hole of the existing arc chamber body 10. By limiting the relative relationship between R2 and R1, the wall thickness of the first inner sleeve 122 is consistent with the wall thickness of the first inner side plate 121, i.e. both have a wall thickness of a, which is beneficial to the manufacture of the first inner side plate assembly 12 and ensures better mechanical properties of the first inner side plate assembly 12.

[0064] The radius of the inner circumferential surface of the first mounting hole 111 is the same as the radius R2 of the outer circumferential surface of the first inner sleeve 122, so the diameter of the first mounting hole 111 opened on the first outer side plate 11 is larger than the diameter of the existing cathode mounting hole.

[0065] In this embodiment, the size of the first inner sleeve 122 in the axial direction thereof is the same as the wall thickness of the first outer side plate 11, where the axial direction corresponds to the opening direction of the inner cavity of the first inner sleeve 122. As Figure 3As shown, the first inner sleeve 122 has a dimension b along its axial direction, thus the wall thickness of the first outer side plate 11 is also b, which is defined by the dimension b to ensure that the first inner sleeve 122 provides complete protection to the first mounting hole 111 and the first inner sleeve 122 does not protrude out of the first outer side plate 11 without affecting the installation of the cathode.

[0066] Please continue to refer to Figure 2 As shown, the arc chamber body 10 includes a second outer side plate 13 and a second inner side plate assembly 14; wherein the second outer side plate 13 and the second inner side plate assembly 14 are located at one side of the arc chamber body 10 along its length direction. And the first outer side plate 11 and the second outer side plate 13 are arranged in parallel and opposite.

[0067] The third mounting hole 131 is provided on the second outer side plate 13; the second outer side plate 13 is consistent with the material of the existing arc chamber body 10, for example, tungsten-containing alloy is used to meet the high temperature resistance requirement of the chamber.

[0068] Among the first mounting hole 111 and the third mounting hole 131, one is a cathode mounting hole and the other is a reflector mounting hole.

[0069] In this embodiment, the first mounting hole 111 is used as the cathode mounting hole, and the third mounting hole 131 is used as the reflector mounting hole.

[0070] The second inner side plate assembly 14 is made of a non-metallic material, and the second inner side plate assembly 14 is made of a high-temperature-resistant material that meets the use requirements of the arc chamber body 10. In this embodiment, the second inner side plate assembly 14 is made of graphite material, which not only ensures a lower material cost, but also prevents the second inner side plate assembly 14 from being combined with fluorine ions after the dissociation of fluorine-containing gas to generate compounds.

[0071] The second inner side plate assembly 14 includes a second inner side plate 141, which is attached to the inner side of the second outer side plate 13. Here, the inner side refers to the side of the second outer side plate 13 close to the inner cavity of the arc chamber body 10.

[0072] The second inner side plate 141 is provided with a fourth mounting hole 143 opposite to the third mounting hole 131, and the two are arranged opposite to each other to form a mounting hole for mounting the reflector.

[0073] The second inner side plate 141 is attached to the inner side of the second outer side plate 13, and helps to isolate the electrons and ions in the inner cavity of the arc chamber body 10. Since the second inner side plate 141 is made of non-metallic material, the second inner side plate 141 itself will not be excited to generate metal ions, and since the second outer side plate 13 is isolated, the second outer side plate 13 will not be excited to generate tungsten ions. Therefore, the side plate for mounting the reflector will not generate tungsten fluoride due to excitation, thereby reducing the generation of compounds around the reflector, and further reducing the deposition on the reflector, so as to improve the short circuit and ion beam unevenness.

[0074] In the embodiment, the second inner side plate 141 is attached to and fixed relative to the second outer side plate 13 by bonding, clamping or other known connection methods.

[0075] In the embodiment, the structure of the second outer side plate 13 is consistent with the existing outer side plate of the arc chamber body 10 for mounting the reflector side, and the second inner side plate 141 is attached to the inner side of the second outer side plate 13. The second inner side plate 141 is preferably completely covered on the inner side of the second outer side plate 13 to completely isolate the second outer side plate 13 from the cavity. The shape and structure of the second inner side plate 141 can be adapted to the actual structure of the second outer side plate 13.

[0076] Please continue to refer to Figure 2 As shown, the second inner side plate assembly 14 further comprises a second inner sleeve 142 connected to the outer side of the second inner side plate 141 and in communication with the fourth mounting hole 143, and the second inner sleeve 142 extends into the third mounting hole 131.

[0077] In the embodiment, the second inner side plate 141 and the second inner sleeve 142 are integrally formed, and the outer wall of the second inner sleeve 142 is attached to the inner wall of the third mounting hole 131. Therefore, the second inner sleeve 142 protects the inner wall of the third mounting hole 131 to prevent the inner wall of the third mounting hole 131 from contacting the electrons or ions in the inner cavity of the arc chamber body 10 to cause excitation to generate tungsten ions.

[0078] Please refer to Figure 5 and Figure 6 As shown, in the embodiment, the inner circumferential surface of the second inner sleeve 142 has a radius R3, and the outer circumferential surface has a radius R4, where R4 = R3 + c, and c is the wall thickness of the second inner side plate 141, and the radius R3 is consistent with the aperture of the reflector mounting hole of the existing arc chamber body 10. By limiting the relative relationship between R4 and R3, the wall thickness of the second inner sleeve 142 is consistent with the wall thickness of the second inner side plate 141, i.e. both have a wall thickness of c, which is beneficial to the manufacturing of the second inner side plate assembly 14 and ensures better mechanical properties of the second inner side plate assembly 14.

[0079] The inner circumferential surface of the third mounting hole 131 has the same radius as the outer circumferential surface of the second inner sleeve 142, so the diameter of the third mounting hole 131 in the second inner side plate 141 is larger than the diameter of the existing cathode mounting hole.

[0080] In this embodiment, the second inner sleeve 142 has the same axial dimension as the wall thickness of the second outer side plate 13. As shown in Figure 5 the second inner sleeve 142 has an axial dimension of d, so the wall thickness of the second outer side plate 13 is also d. Through this dimension limitation, the second inner sleeve 142 can completely protect the third mounting hole 131, and the second inner sleeve 142 does not protrude out of the second outer side plate 13, without affecting the installation of the reflector.

[0081] In this embodiment, the first inner side plate assembly 12 and the second inner side plate assembly 14 are made of graphite material. In other alternative embodiments, the first inner side plate assembly 12 and the second inner side plate assembly 14 can be made of ceramic or other known high-temperature-resistant non-metallic materials that can be used in the arc chamber body 10.

[0082] In this embodiment, the first inner side plate 121 and the second inner side plate 141 are added to the arc chamber body 10 on both sides of its length direction, which are mainly used to protect the outer side plate where the cathode and the reflector are installed. In other alternative embodiments, the remaining side walls of the arc chamber body 10 can also be adaptively increased with graphite inner side plates to form protection for the inner walls of the arc chamber body 10 in all directions, completely solving the phenomenon of generating products in the chamber of the arc chamber body 10 due to the excitation of tungsten ions.

[0083] In this embodiment, the first mounting hole 111 and the third mounting hole 131 are circular holes, and the first inner sleeve 122 and the second inner sleeve 142 are cylindrical sleeves. In other alternative embodiments, the shapes of the first mounting hole 111 and the third mounting hole 131 and the structures of the first inner sleeve 122 and the second inner sleeve 142 can be adaptively adjusted based on actual installation needs.

[0084] In this embodiment, the first inner side plate 121 and the second inner side plate 141 are approximately rectangular structures, and can be partially provided with notches to adapt to specific installation structures. In other alternative embodiments, the specific shapes of the first inner side plate 121 and the second inner side plate 141 can be adaptively adjusted based on the specific shapes of the first outer side plate 11 and the second outer side plate 13 and the specific installation method.

[0085] In the embodiment, the first mounting hole 111, the second mounting hole 123 and the first inner sleeve 122 are coaxially arranged, and the diameter of the second mounting hole 123 is the same as the inner diameter of the first inner sleeve 122. The third mounting hole 131, the fourth mounting hole 143 and the second inner sleeve 142 are coaxially arranged, and the diameter of the fourth mounting hole 143 is the same as the inner diameter of the second inner sleeve 142.

[0086] In the embodiment, the ion source further comprises the ion source arc chamber, a cathode and a reflector. The cathode is coaxially arranged in the first mounting hole 111 and the second mounting hole 123. Specifically, the cathode extends into the inner cavity of the ion source arc chamber through the first inner sleeve 122. The reflector is coaxially arranged in the third mounting hole 131 and the fourth mounting hole 143. Specifically, a part of the reflector extends into the inner cavity of the ion source arc chamber through the second inner sleeve 142.

[0087] The ion source further comprises a filament, a first power supply unit, a second power supply unit and a third power supply unit.

[0088] The cathode has a cylindrical structure and a cavity. The filament is arranged in the cavity of the cathode. The two ends of the filament are connected to the positive pole and the negative pole of the first power supply unit, respectively. The positive pole of the second power supply unit is connected to the cathode, and the negative pole is connected to the filament. The positive pole of the third power supply unit is connected to the arc chamber, and the negative pole is connected to the cathode.

[0089] The cavity of the cathode is further connected to an intermediate rod. The intermediate rod extends out of the opening end of the cathode for fixing the cathode.

[0090] The arc chamber further has a gas inlet and a gas outlet. The gas inlet is used for introducing a doping gas, and the gas outlet is used for discharging the gas in the arc chamber.

[0091] In the embodiment, the first power supply unit provides current to the filament, so that the temperature of the filament increases. When the temperature of the filament increases to a certain extent, the filament will begin to generate hot electrons. The second power supply unit connects the filament and the cathode to generate a fixed-direction electric field E between the filament and the cathode. The hot electrons generated by the filament run along the electric field towards the cathode and hit the cathode. After being hit by the hot electrons, the temperature of the cathode increases and generates more hot electrons. The third power supply unit connects the arc chamber and the cathode to generate a fixed-direction acceleration electric field in the arc chamber. When the hot electrons generated by the cathode are attracted by the acceleration electric field, they become high-energy hot electrons and are emitted towards the arc chamber. After the high-energy hot electrons hit the doping source gas introduced into the arc chamber, the doping source gas is dissociated and generates positive and negative ions, which are used for subsequent ion doping steps.

[0092] The ion source in the embodiment differs from the existing ion source in the structure of the ion source arc chamber, and the rest of the structure is consistent with the existing ion source. The specific structure of the ion source and the working principle are prior art, and will not be described here.

[0093] In the embodiment, an ion implantation device is also provided, which is installed with the ion source described above.

[0094] The ion implantation device also comprises an ion extraction and mass analyzer, an acceleration tube, a scanning system, a process cavity and a high vacuum system, wherein the process cavity is provided with a placement site for placing a wafer, the wafer to be doped is placed on the placement site, the high vacuum system is used to form a negative pressure environment in the process cavity, the ion source generates an ion beam and separates impurity ions through the ion extraction and mass analyzer, and then the ion beam is accelerated through the acceleration tube to enter the process cavity to bombard the surface of the wafer, thereby realizing ion implantation.

[0095] The ion implantation device described above differs from the existing ion implantation device in the structure of the ion source arc chamber, and the rest of the components are consistent with the existing ion implantation device. The structure and principle of the ion implantation device are prior art, and will not be described here.

[0096] The various embodiments in the specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0097] The above description is only a description of the preferred embodiments of the utility model, and does not limit the scope of the utility model. Any modification or modification made by a person skilled in the art according to the above disclosure is within the protection scope of the claims.

Claims

1. An ion source arc chamber, characterized by, The arc chamber body has an inner cavity. The arc chamber body comprises a first outer side plate and a first inner side plate assembly. The first outer side plate has a first mounting hole formed thereon, which is a cathode mounting hole or a reflector mounting hole. The first inner side plate assembly is made of a non-metallic material and comprises a first inner side plate, which is attached to a side of the first outer side plate close to the inner cavity and has a second mounting hole formed thereon opposite to the first mounting hole. The first inner side plate assembly further comprises a first inner sleeve connected to a side of the first inner side plate away from the inner cavity and in communication with the second mounting hole, which extends into the first mounting hole. An outer wall of the first inner sleeve is attached to an inner wall of the first mounting hole.

2. The ion source arc chamber of claim 1, wherein, The first inner sleeve has the same axial dimension as the wall thickness of the first outer side plate.

3. The ion source arc chamber of claim 2, wherein, The arc chamber body comprises a second outer side plate and a second inner side plate assembly. The second outer side plate has a third mounting hole formed thereon.

4. The ion source arc chamber of claim 1, wherein, The second inner side plate assembly is made of a non-metallic material and comprises a second inner side plate, which is attached to a side of the second outer side plate close to the inner cavity and has a fourth mounting hole formed thereon opposite to the third mounting hole. The second inner side plate assembly further comprises a second inner sleeve connected to a side of the second inner side plate away from the inner cavity and in communication with the fourth mounting hole, which extends into the third mounting hole. An outer wall of the second inner sleeve is attached to an inner wall of the third mounting hole.

5. The ion source arc chamber of claim 4, wherein, The second inner sleeve has the same axial dimension as the wall thickness of the second outer side plate.

6. The ion source arc chamber of claim 5, wherein, The first outer side plate and the second outer side plate are arranged in parallel and opposite to each other. The first inner side plate assembly is made of a graphite material.

7. The ion source arc chamber of claim 4, wherein the arc chamber is formed from a material selected from the group consisting of: tungsten, molybdenum, rhenium, and alloys thereof. The second inner side plate assembly is made of a graphite material.

8. The ion source arc chamber of any of claims 1 to 7, wherein, One of the first mounting hole and the third mounting hole is a cathode mounting hole and the other is a reflector mounting hole.

9. The ion source arc chamber of claim 4, wherein, The ion source is provided with an ion source arc chamber as claimed in any one of claims 1 to 10.

10. The ion source arc chamber of claim 4, wherein, The ion implantation device is provided with an ion source as claimed in claim 11.

11. An ion source, characterized by, ​ 12. An ion implantation apparatus, characterized by, ​

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