Far-source plasma magnetron sputtering device
By employing vertically distributed electromagnets and induction coil assemblies in the magnetron sputtering apparatus, the problem of uneven etching of the target material was solved, the target material utilization rate and sputtering uniformity were improved, and the efficient use of the target material was achieved.
Patent Information
- Application Number
- CN202422804043.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-18
- Publication Date
- 2025-11-11
- Estimated Expiration
- 2034-11-18
AI Technical Summary
In existing magnetron sputtering equipment, excessively deep etching of the target area leads to severe target damage and low utilization, especially for expensive targets.
A remote plasma magnetron sputtering device is used. By setting the first and second electromagnets to be vertically distributed, a magnetic field distribution with different planes is formed. Combined with the plasma generated by the induction coil assembly, the surface of the target material is uniformly etched, reducing the non-uniformity of the etched area and improving the utilization rate of the target material.
This method achieves uniform etching of the target surface, improves the utilization rate of the target, and ensures the uniformity of sputtering and production efficiency.
Smart Images
Figure CN223535191U_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of magnetron sputtering technology, and more particularly to a remote plasma magnetron sputtering device. Background Technology
[0002] The working principle of magnetron sputtering is as follows: Figure 6 and Figure 7 Under vacuum conditions, argon gas is introduced into the vacuum chamber, and an electric current is applied to the magnetron target, causing the argon gas to ionize. Under the influence of the electric field, electrons are accelerated towards the anode, and positive argon ions (Ar) are formed. + The particles accelerate towards the cathode (target) and bombard the target surface with high energy, causing sputtering. In the sputtered particles, neutral target atoms or molecules are deposited on the substrate to form a thin film; while the generated secondary electrons are affected by electric and magnetic fields. If it is a toroidal magnetic field, the electrons will move in a circular motion on the target surface in an approximately cycloidal manner and be confined in the plasma region near the target surface, where they will ionize a large amount of Ar to bombard the target.
[0003] Based on the principle of magnetron sputtering, during the magnetron sputtering process, argon ions will generate a ring-shaped sputtering region on the target. The etching depth of this sputtering region is significantly deeper than other regions. When the etching region is too deep, it will directly burn through the target, and this region can no longer be used for sputtering. As a result, a thin film will form on the surface of the substrate, so the target needs to be replaced. Frequent replacement of the target leads to low target utilization. Therefore, it is very important to improve the sputtering utilization of the target, especially for relatively expensive targets. Summary of the Invention
[0004] In view of the above-mentioned shortcomings and deficiencies of the prior art, the present invention provides a remote plasma magnetron sputtering device, which solves the problem that the target material in the etching area is severely damaged during magnetron sputtering, resulting in low target material utilization.
[0005] To achieve the above objectives, the main technical solutions adopted by the present invention include:
[0006] In a first aspect, embodiments of the present invention provide a remote plasma magnetron sputtering device, comprising:
[0007] The frame has a vacuum chamber on its first surface, an air extraction port on the vacuum chamber, a first electromagnet inside the vacuum chamber along a first direction, a second electromagnet inside the vacuum chamber along a second direction, a sputtering target on the second electromagnet, an induction coil assembly on one side of the vacuum chamber to form plasma, the induction coil assembly being connected to the first electromagnet, and a sample lifting device on the side of the vacuum chamber away from the first surface, the sample lifting stage reciprocating along the second direction to place a substrate inside the vacuum chamber;
[0008] The first direction is parallel to the first surface, and the second direction is perpendicular to the first surface.
[0009] Optionally, the induction coil assembly includes an induction power supply, an inlet valve, a quartz tube, and an induction coil; the output terminal of the induction power supply is connected to the induction coil, the induction coil is located outside the quartz tube, the induction coil and the quartz tube are located inside the vacuum chamber, and the induction coil and the quartz tube extend along a first direction; the inlet valve is connected to the quartz tube to introduce argon gas into the quartz tube.
[0010] Optionally, the sample lifting device includes a sample stage and a sample holder; the sample holder is located at the bottom of the sample stage, the substrate is inserted between the sample stage and the sample holder, and the sample stage is movable along a second direction to transport the substrate.
[0011] Optionally, the sample holder is a ring structure with a notch.
[0012] Optionally, the orthographic projection of the substrate along the second direction coincides with the orthographic projection of the sputtering target along the second direction.
[0013] Optionally, the shape of the substrate is the same as that of the sputtering target, and the cross-sectional area of the sputtering target along the first direction is greater than that of the substrate along the first direction.
[0014] Optionally, an air extraction pipe is provided at the end of the air extraction port away from the vacuum chamber, and a vacuum gauge is provided on the air extraction pipe to measure the vacuum level inside the vacuum chamber.
[0015] Optionally, the first electromagnet and the second electromagnet are at the same distance from the center of the vacuum cavity.
[0016] The beneficial effects of this invention are as follows: In the far-source plasma magnetron sputtering device of this invention, the first and second electromagnets are not horizontally distributed as in the past, but vertically distributed on different planes. Therefore, during magnetron sputtering, the etching area is uniformly distributed on the surface of the target material, resulting in uniform etching of the target surface. Thus, when magnetron sputtering is performed using this device, the target surface is flat, which ensures sputtering uniformity, making the final thin film on the substrate more uniform, and also improves the utilization rate of the target material.
[0017] Optionally, the plasma in the device is generated inside the quartz tube in the induction coil assembly. The quartz tube is a certain distance away from the target material. Therefore, when the plasma is guided to the surface of the target material, the mutual influence between the individual plasmas can be reduced, so that the plasma as a whole falls on the surface of the target material. Finally, the sputtering is also a whole sputtering, so the magnetron sputtering will be more uniform. Attached Figure Description
[0018] Figure 1 This is a schematic diagram of the overall structure of a remote plasma magnetron sputtering device disclosed in this embodiment;
[0019] Figure 2 This is a partial cross-sectional view of a remote plasma magnetron sputtering device disclosed in this embodiment.
[0020] Figure 3 This is a partial side view of a remote plasma magnetron sputtering device disclosed in this embodiment.
[0021] Figure 4 This is a schematic diagram of the lifting sample device of a remote plasma magnetron sputtering apparatus disclosed in this embodiment;
[0022] Figure 5 This is a schematic diagram of the substrate connection structure of a remote plasma magnetron sputtering device disclosed in this embodiment;
[0023] Figure 6 This is a background art description of a remote plasma magnetron sputtering device disclosed in the embodiments of this disclosure. Figure 1 ;
[0024] Figure 7 This is a background art description of a remote plasma magnetron sputtering device disclosed in the embodiments of this disclosure. Figure 2 .
[0025] Explanation of reference numerals in the attached figures:
[0026] 1. Frame; 2. Vacuum chamber; 3. Evacuation port; 4. First electromagnet; 5. Second electromagnet; 6. Sputtering target; 7. Induction coil assembly; 701. Induction power supply; 702. Inlet valve; 703. Quartz tube; 704. Induction coil; 8. Sample lifting device; 801. Sample stage; 802. Sample holder; 9. Substrate; 10. Evacuation pipe; 11. Vacuum gauge; 12. Sub-pipe; A. First surface; a. First direction; b. Second direction. Detailed Implementation
[0027] To better explain and facilitate understanding of the present invention, a detailed description of the invention is provided below with reference to the accompanying drawings and specific embodiments. In this document, directional terms such as "upper," "lower," etc., are used interchangeably with other directional terms. Figure 1 The orientation is used as a reference.
[0028] The present invention provides a remote plasma magnetron sputtering device. By using a first electromagnet 4 arranged along a first direction a inside a vacuum cavity 2 and a second electromagnet 5 arranged along a second direction inside the vacuum cavity 2, the first electromagnet 4 and the second electromagnet 5 are located in different directions. Therefore, during magnetron sputtering, the etching area that traditionally exists between the first electromagnet 4 and the second electromagnet 5 will not be generated on the sputtering target 6. This ensures the flatness of the surface of the sputtering target 6, which is beneficial for the long-term use of the target. At the same time, it can also ensure that the plasma falls more uniformly on the target.
[0029] To better understand the above technical solutions, exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the drawings, it should be understood that the present invention can be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that the present invention can be understood more clearly and thoroughly, and that the scope of the present invention can be fully conveyed to those skilled in the art.
[0030] Example 1:
[0031] Reference Figure 1 To be continued Figure 5 ;
[0032] This embodiment provides a remote plasma magnetron sputtering device, comprising: a frame 1, a vacuum chamber 2 on a first surface A of the frame 1, an exhaust port 3 on the vacuum chamber 2, a first electromagnet 4 disposed inside the vacuum chamber 2 along a first direction a, a second electromagnet 5 disposed inside the vacuum chamber 2 along a second direction, a sputtering target 6 disposed on the second electromagnet 5, an induction coil 704 assembly 7 disposed outside the vacuum chamber 2 to form plasma, the induction coil 704 assembly 7 being connected to the first electromagnet 4, and a lifting sample device 8 disposed on the side of the vacuum chamber 2 away from the first surface A, the lifting sample stage 801 reciprocating along the second direction to place a substrate 9 inside the vacuum chamber 2; wherein, the first direction a is parallel to the first surface A, and the second direction is perpendicular to the first surface A.
[0033] Specifically, in order to solve the problem that the target material is severely damaged in the etching area during magnetron sputtering processing in existing equipment, resulting in low target material utilization, the first electromagnet 4 and the second electromagnet 5 provided in this embodiment are set perpendicular to each other. Then, after plasma is formed by the induction coil 704 component 7, the plasma moves from the first electromagnet 4 to the second electromagnet 5, uniformly etching the sputtering target material 6, making the overall surface of the sputtered plate thinner and more uniform, but the surface remains flat, thus ensuring the uniformity of sputtering.
[0034] The remote plasma magnetron sputtering device provided in this embodiment is used for magnetron sputtering processing operations. The vacuum chamber 2 on the frame 1 is the reaction area for magnetron sputtering. The vacuum chamber 2 is equipped with an extraction port 3, and an extraction pipe 10 is located at the end of the extraction port 3 furthest from the vacuum chamber 2. An external extraction device can provide a vacuum environment to the vacuum chamber 2 to reduce deviations during magnetron sputtering. The extraction device can be, but is not limited to, a molecular pump and a mechanical pump. The molecular pump is used in high-vacuum environments, and the mechanical pump is used in low-vacuum environments. Precise settings for different magnetron sputtering processing environments can meet varying magnetron sputtering precision requirements. The first electromagnet 4 and the second electromagnet 5 are energized magnetic materials, respectively positioned along the first direction a and the second direction. The second electromagnet 5 has a sputtering plate on it. The first electromagnet 4 draws ionized plasma into the vacuum chamber 2, and the second electromagnet 5 moves the plasma perpendicular to the target surface. This arrangement eliminates the etching zone caused by plasma movement on the vertically positioned sputtering target 6, effectively protecting the target. The etching zone is located where the plasma turns from the primary magnet... The position on the target material corresponds to the highest point of the trajectory of the secondary magnet. Under this positional relationship between the first electromagnet 4 and the second electromagnet 5, the surface of the sputtering target material 6 will be uniformly engraved to ensure surface integrity. The lifting sample device 8 is a general term for the sample transport device. The lifting sample device 8 includes a sample stage 801 and a sample holder 802. The sample holder 802 is located at the bottom of the sample stage 801. The substrate 9 is inserted between the sample stage 801 and the sample holder 802. The substrate 9 is the carrier for coating. The sample stage 801 is connected to the external control device. The sample stage 801 is connected to the vacuum chamber 2 and can be raised and lowered to transport the substrate 9 into the vacuum chamber 2. The sample holder 802 is a ring structure with a notch. It can be understood that when the substrate 9 is connected to the sample stage 801 and the sample holder 802, the substrate 9 is inserted between the sample stage 801 and the sample holder 802 through the notch. Then, the sample stage 801 is lowered into the vacuum chamber 2 by the external controller to complete the placement of the substrate 9. At the same time, the external controller can adjust the distance of the descent of the sample stage 801 to meet the needs of production and processing.
[0035] Additionally, as attached Figure 2It is understood that, in order to make the plasma magnetron sputtering more uniform and reduce the mutual influence between different plasmas, the induction coil assembly includes an induction power supply 701, an inlet valve 702, a quartz tube 703, and an induction coil 704; wherein the vacuum chamber 2 is connected to a branch pipe 12 along the first direction a, the branch pipe 12 extends along the first direction a, and the induction coil 704 and the quartz tube 703 are disposed in the branch pipe 12, wherein the induction coil 704 surrounds the outside of the quartz tube 703 but does not contact the quartz tube 703, and the induction coil 704 is connected to the induction power supply 701, and the inlet valve 702 is connected to an external gas tank to supply argon gas into the quartz tube 703. It can be understood that the quartz tube 703 is filled with... After the argon gas is filled, the argon gas can be ionized by the charged induction coil 704. The plasma generated by ionization, i.e. argon ions, will move under the attraction of the first electromagnet 4 at the connection between the branch pipe 12 and the vacuum chamber 2, and finally enter the vacuum chamber 2. Since the branch pipe 12 has a certain distance, the plasma enters the vacuum chamber 2 gradually from the far end at a certain delivery rate. Therefore, the movement of the plasma is orderly and reduces the mutual interference between the plasmas. As a result, the film formation on the surface of the substrate 9 is more uniform during the final magnetron sputtering. The size of the quartz tube 703 and the argon gas delivery rate can be adjusted to meet the needs of different production processes.
[0036] Secondly, in order to ensure the integrity of the coating on the surface of the substrate 9, the shape of the substrate 9 is the same as that of the sputtering target 6, which can be, but is not limited to, circular. At the same time, the area of the sputtering target 6 is larger than the area of the coating surface of the substrate 9. It can be understood that when the surface of the sputtering target 6 is bombarded, the target atoms will scatter in all directions. The larger the area of the sputtering target 6, the more target atoms will fly out. When the substrate 9 is coated, the smaller area of the substrate 9 makes it easier to absorb target atoms, so that the coating is formed quickly, which speeds up the production time and improves the production efficiency.
[0037] Secondly, in order to improve the accuracy of plasma movement, the first electromagnet 4 and the second electromagnet 5 are at the same distance from the center of the vacuum cavity 2. It can be understood that after the plasma moves from the first electromagnet 4 to the second electromagnet 5, it needs to strike the sputtering target 6 on the second electromagnet 5. Therefore, the plasma needs to strike the sputtering target 6 perpendicularly for the best effect. Thus, when the first electromagnet 4 and the second electromagnet 5 are in this positional relationship, the trajectory of the plasma satisfies the direction perpendicular to the sputtering plate, thereby efficiently and evenly striking the sputtering target 6, and finally completing accurate and uniform coating.
[0038] In the description of this invention, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.
[0039] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.
[0040] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first and second features are in direct contact, or that they are in indirect contact through an intermediate medium. Furthermore, "above," "over," or "on top" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," or "beneath" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
[0041] In the description of this specification, the terms "one embodiment," "some embodiments," "embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.
[0042] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make modifications, alterations, substitutions and variations to the above embodiments within the scope of the present invention.
Claims
1. A remote plasma magnetron sputtering device, characterized in that, include; A frame (1) is provided with a vacuum chamber (2) on its first surface. The vacuum chamber (2) is provided with an air extraction port (3). A first electromagnet (4) is provided inside the vacuum chamber (2) along a first direction. A second electromagnet (5) is provided inside the vacuum chamber (2) along a second direction. A sputtering target (6) is provided on the second electromagnet (5). An induction coil assembly (7) is provided on one side of the vacuum chamber (2) to form plasma by ionizing argon gas. The induction coil assembly (7) is connected to the first electromagnet (4). A lifting sample device (8) is provided on the side of the vacuum chamber (2) away from the first surface. The lifting sample device (8) moves back and forth along the second direction to place a substrate (9) inside the vacuum chamber (2). Wherein, the first direction is parallel to the first surface, and the second direction is perpendicular to the first surface.
2. The remote plasma magnetron sputtering device as described in claim 1, characterized in that: The induction coil assembly (7) includes an induction power supply (701), an air intake valve (702), a quartz tube (703), and an induction coil (704). The output terminal of the induction power supply (701) is connected to the induction coil (704). The induction coil (704) is located outside the quartz tube (703). The induction coil (704) and the quartz tube (703) are located inside the vacuum cavity (2). The induction coil (704) and the quartz tube (703) extend along the first direction. The air inlet valve (702) is connected to the quartz tube (703) to introduce argon gas into the quartz tube (703).
3. The remote plasma magnetron sputtering device as described in claim 1, characterized in that: The lifting sample device (8) includes a sample stage (801) and a sample holder (802). The sample holder (802) is located at the bottom of the sample stage (801), and the substrate (9) is inserted between the sample stage (801) and the sample holder (802). The sample stage (801) is movably arranged along the second direction to transport the substrate (9).
4. The remote plasma magnetron sputtering device as described in claim 3, characterized in that: The sample holder (802) is a ring structure with a notch.
5. The remote plasma magnetron sputtering device as described in claim 1, characterized in that: The orthographic projection of the substrate (9) along the second direction coincides with the orthographic projection of the sputtering target (6) along the second direction.
6. The remote plasma magnetron sputtering device as described in claim 1, characterized in that: The shape of the substrate (9) is the same as that of the sputtering target (6), and the cross-sectional area of the sputtering target (6) along the first direction is greater than that of the substrate (9) along the first direction.
7. The remote plasma magnetron sputtering device as described in claim 1, characterized in that: The end of the air extraction port (3) away from the vacuum cavity (2) is provided with an air extraction pipe (10), and a vacuum gauge (11) is provided on the air extraction pipe (10) to measure the vacuum degree inside the vacuum cavity (2).
8. The remote plasma magnetron sputtering device as described in claim 1, characterized in that: The first electromagnet (4) and the second electromagnet (5) are at the same distance from the center of the vacuum cavity (2).