Perovskite single crystal slice growing device

Abstract

The utility model discloses a perovskite single crystal slice growing device, and belongs to the technical field of perovskite single crystal preparation. The perovskite single crystal wafer growing device comprises an input pipe for introducing a perovskite single crystal growth solution, a shunting pipe and branches for shunting, and a casting plate and a thickness limiting plate for forming a gap, a single crystal growth solution flows into the gap between the casting plate and the thickness limiting plate from the input pipe through the flow dividing pipe and the branches, so that the single crystal growth solution can uniformly flow into the gap, and under the action of the heater, a single crystal slice can uniformly nucleate and grow on the whole casting plate; by limiting the gap distance between the casting plate and the thickness limiting plate and adjusting the input flow of the input pipe, the forming thickness of the single crystal can be adjusted, and the formed single crystal is uniform in thickness.

Description

Technical Field

[0001] This utility model belongs to the field of perovskite technology, specifically relating to a perovskite single crystal thin film growth device. Background Technology

[0002] In the development of advanced optoelectronic devices such as solar cells, light-emitting diodes, and radiation detectors, perovskite single-crystal wafers are considered a highly promising new material due to their excellent photoelectric properties and solution-processable characteristics. However, a significant problem currently existing in the growth process of perovskite single-crystal wafers is the inhomogeneity of growth.

[0003] Traditional methods for growing perovskite single-crystal thin films, such as solution methods, vapor phase methods, and floating zone methods, can achieve the preparation of single-crystal thin films to a certain extent. However, due to various factors, such as inhomogeneity of solution composition and precipitation rate, the perovskite single-crystal thin films often exhibit inhomogeneity during growth. Specifically, the solution method, as one of the most commonly used methods for preparing perovskite single-crystal thin films, is significantly affected by factors such as inhomogeneity of solution composition, inhomogeneity of precipitation rate, and changes in temperature gradient. The vapor phase method may be constrained by factors such as gas flow rate, temperature distribution, and raw material purity, leading to differences in the structure and properties of the grown single-crystal thin films. Although the floating zone method can reduce the influence of solution or gas flow on the growth process to some extent, it is complex to operate and has high equipment requirements, and it is still difficult to completely avoid the problem of growth inhomogeneity.

[0004] This growth inhomogeneity not only severely affects the appearance quality of perovskite single-crystal wafers, but more importantly, it can lead to a significant decline in their photoelectric performance and stability. Specifically, uneven growth can result in defects, grain boundaries, and stress concentration within the single-crystal wafer, thus impacting its photoelectric conversion efficiency, carrier mobility, and long-term stability. These problems will directly limit the application of perovskite single-crystal wafers in high-performance optoelectronic devices, such as high-efficiency solar cells, high-brightness LEDs, and high-sensitivity radiation detectors.

[0005] To overcome this problem, researchers have been continuously exploring and improving methods for growing perovskite single crystal thin films. For example, optimizing the composition and concentration distribution of the solution, precisely controlling the precipitation rate, and improving the growth environment can reduce growth inhomogeneity to some extent. However, these methods often require precise control during the preparation process, are complex to operate, and are difficult to completely avoid the generation of inhomogeneity. Utility Model Content

[0006] The purpose of this invention is to overcome the shortcomings of the prior art and provide a perovskite single crystal wafer growth device to solve the problem that the thickness of perovskite single crystal wafers is not easy to control during the growth process and the wafer thickness is difficult to be uniform.

[0007] To achieve the above objectives, the present invention adopts the following technical solution:

[0008] A perovskite single crystal thin film growth apparatus includes an input tube, a shunt tube, a branch, a casting plate, and a thickness limiting plate;

[0009] One side of the split pipe is connected to the outlet of the inlet pipe, and the other side is connected to several branches; several branches are connected to the ends of the casting plate.

[0010] A thickness limiting plate is placed above the casting plate, and there is a gap between the casting plate and the thickness limiting plate; barriers are provided on both sides of the casting plate and the thickness limiting plate.

[0011] The further improvement of this utility model is as follows:

[0012] Preferably, the tail end of the casting plate is disposed on the heater.

[0013] Preferably, the tail end of the casting plate and the heater are connected by a limiting frame along the flow direction of the perovskite single crystal growth solution.

[0014] Preferably, the casting plate includes an integrally connected ramp portion and a flat plate portion, and the thickness limiting plate includes an integrally connected inclined plate and a horizontal plate;

[0015] An inclined thickness-limiting gap is formed between the inclined surface of the inclined section and the inclined plate, and a horizontal thickness-limiting gap is formed between the flat plate section and the horizontal plate. The inclined thickness-limiting gap and the horizontal thickness-limiting gap are connected. The bottom width of the inclined thickness-limiting gap is equal to the width of the horizontal thickness-limiting gap.

[0016] Preferably, the thickness of the inclined thickness-limiting gap gradually narrows from high to low.

[0017] Preferably, the inclined portion has several holes for connecting the branches and the inclined thickness-limiting gap, with each hole corresponding to one branch.

[0018] Preferably, the branches are evenly spaced along the length of the branch pipe.

[0019] Preferably, each branch is provided with a valve body.

[0020] Preferably, a pump body is provided on the input pipe.

[0021] Preferably, the outlet of the input pipe and the middle position of the branch pipe are connected.

[0022] Compared with the prior art, the present invention has the following beneficial effects:

[0023] This utility model discloses a perovskite single crystal thin film growth apparatus. The apparatus includes an input pipe for introducing perovskite single crystal growth liquid. The single crystal growth liquid flows from the input pipe through a split pipe and a branch into the gap between the casting plate and the thickness limiting plate, so that the single crystal growth liquid can flow into the gap evenly, allowing the single crystal thin film to nucleate and grow uniformly on the entire casting plate. By limiting the gap distance between the casting plate and the thickness limiting plate, the formation thickness of the single crystal can be adjusted, resulting in a uniform thickness of the formed single crystal film.

[0024] Furthermore, by placing a heater at the tail of the casting plate, it is possible to assist in the formation and growth of crystal nuclei.

[0025] Furthermore, a limiting frame is provided at the tail of the casting plate, which can assist in the nucleation of the casting plate and also play a role in heat preservation.

[0026] Furthermore, the inclined portion has several holes for connecting the branches and the inclined thickness-limiting gaps. Each hole corresponds to a branch, so that the fluid flowing in from the input pipe can be evenly separated.

[0027] Furthermore, each branch is equipped with a valve body, which makes the fluid flow rate on each branch controllable. If uneven nucleation is found in any part, the flow rate of that branch can be increased or decreased accordingly.

[0028] Furthermore, by installing a pump body on the input pipe, the flow rate of the fluid can be effectively controlled, thereby controlling the forming process of the single crystal thin film. Attached Figure Description

[0029] Figure 1 This is a structural diagram of the present invention;

[0030] Figure 2 This is a detailed drawing of the present invention.

[0031] Wherein: 1-Pump body; 2-Input pipe; 3-Diverter pipe; 4-Branch; 5-Valve body; 6-Casting plate; 7-Thickness limiting plate; 8-Heater; 9-Limiting frame; 10-Inclined thickness limiting gap; 11-Horizontal thickness limiting gap; 12-Hole; 601-Sloping section; 602-Plate section; 701-Inclined plate; 702-Horizontal plate. Detailed Implementation

[0032] The present invention will now be described in further detail with reference to the accompanying drawings:

[0033] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model; the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance; furthermore, unless otherwise explicitly specified and limited, the terms "installed," "connected," and "linked" should be interpreted broadly, for example, it can be a fixed connection or a detachable connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be a connection within two components. For those skilled in the art, the specific meaning of the above terms in this utility model can be understood according to the specific circumstances.

[0034] See Figure 1 This utility model discloses a perovskite single crystal thin film growth device, which includes a pump body 1, an input pipe 2, a branch pipe 3, a branch 4, a valve body 5, a casting plate 6, a thickness limiting plate 7, a heater 8, and a limiting frame 9.

[0035] Pump body 1 is located at one end of input pipe 2 and is used to pump perovskite single crystal growth solution into input pipe 2. The other end of input pipe 2 is connected to branch pipe 3, and the axes of input pipe 2 and branch pipe 3 are perpendicular to each other. Multiple branches 4 are connected to branch pipe 3. Branch pipe 3 and branches 4 are located on opposite sides of input pipe 2. The axis of input pipe 2 is parallel to the axis of branch 4, and input pipe 2 and branch pipe 3 are perpendicular. This structure allows the growth solution to be separated after flowing from input pipe 2 into branch pipe 3 and diverted to multiple branches 4.

[0036] All branches 4 are connected at their other ends to the casting plate 6. The casting plate 6 is divided into an integrally connected ramp portion 601 and a flat portion 602. One side of the ramp portion 601 is a vertical surface, and the opposite side is an inclined surface. The lower end of the inclined surface faces away from the vertical surface, making the cross-section of the ramp portion 601 a trapezoid, in which the width of the upper end face is smaller than the width of the lower end face. The vertical surface and the inclined surface of the ramp portion 601 are connected by several holes 12, and each hole 12 is connected to a branch 4.

[0037] A thickness-limiting plate 7 is covered on the casting plate 6. The thickness-limiting plate 7 is made of transparent material. The thickness-limiting plate 7 is divided into an inclined plate 701 and a horizontal plate 702 that are connected in one piece. The inclined plate 701 is on one side of the slope portion 601 and is inclined relative to the vertical direction. The horizontal plate 702 is set above the flat plate portion 602.

[0038] The inclined plate 701 and the inclined surface of the slope portion 601 do not contact each other, forming an inclined thickness-limiting gap 10; the horizontal plate 702 and the flat plate portion 602 do not contact each other, forming a horizontal thickness-limiting gap 11, the width of the horizontal thickness-limiting gap 11 being the same as the width of the bottom of the inclined thickness-limiting gap 10. By setting the inclined thickness-limiting gap 10 and the horizontal thickness-limiting gap 11, the growth liquid flowing out from the hole 12 can flow along the gaps between the thickness-limiting plate 7 and the casting plate 6.

[0039] The casting plate 6 is provided with barriers on both sides along the flow direction of the growth liquid to prevent the growth liquid from flowing out of the casting plate 6. At the same time, the barriers on both sides of the thickness limiting plate 7 are fixedly connected to the barriers on both sides of the casting plate 6. Therefore, the thickness of the horizontal thickness limiting gap 11 between the casting plate 6 and the thickness limiting plate 7 is determined by the height of the barriers.

[0040] It should be understood that the thickness of the horizontal thickness-limiting gap 11 is adjustable and is determined according to the thickness of the grown single crystal wafer.

[0041] The tail end of the casting plate 6 is mounted on the heater 8, which heats the flat plate portion 602, promoting the formation and growth of crystal nuclei in the solution. The tail end of the casting plate 6 and the heater 8 are connected by a limiting frame 9, which is a sleeve structure that encloses both the tail end of the casting plate 6 and the thickness limiting plate 7. The limiting frame 9 also serves as a heat insulation element, assisting the heating of the single-crystal thin film at the tail end of the casting plate 6 by the heater 8.

[0042] As a preferred embodiment, the input pipe 2 is located at the center of the branch pipe 3, so that the growth solution flowing from the input pipe 2 into the branch pipe 3 can flow evenly to both ends after being output from the input pipe 2.

[0043] As a preferred embodiment, the branch 4 is equally divided along the length of the diversion pipe 3, so that the fluid flowing from the diversion pipe 3 to the casting plate 6 can be evenly distributed through the diversion pipe 3.

[0044] As a preferred option, the number of branches 4 on both sides of the input pipe 2 is equal, so that the amount of solution flowing into the casting plate 6 is uniform and the flow rate is consistent.

[0045] As a preferred embodiment, each branch 4 is equipped with a valve body 5. The valve body 5 limits the flow rate and velocity of each corresponding branch 4, thereby controlling the amount of growth liquid flowing into the casting plate 6 from each branch 4. If the crystallization at a certain point on the casting plate 6 is uneven, resulting in too many crystal nuclei or too fast crystal formation, the valve body 5 can be closed to reduce the amount of growth liquid flowing into the corresponding branch 4. If too few crystal nuclei are formed or the crystal formation is too slow, the opening of the valve body 5 can be increased to increase the amount of growth liquid flowing into the corresponding branch 4.

[0046] As a preferred embodiment, the bottom of the inclined plate 701 is closer to the inclined surface of the inclined portion 601, that is, the inclined surfaces of the inclined plate 701 and the inclined portion 601 are not parallel, the thickness of the inclined thickness limiting gap 10 decreases from top to bottom, and the width of the horizontal thickness limiting gap 11 is equal to the thickness of the bottom of the inclined thickness limiting gap 10.

[0047] The working process of this utility model is as follows:

[0048] Under the action of pump 1, the perovskite crystal growth solution flows from input pipe 2 into branch pipe 3. At the outlet of branch pipe 3, it flows to both sides of branch pipe 3, flowing into each branch 4. The flow rate on each branch 4 can be adjusted by valve 5. Then, it flows through the corresponding holes 12 from branch 4 into the inclined thickness-limiting gap 10 and the horizontal thickness-limiting gap 11. The solution is uniformly spread in the horizontal thickness-limiting gap 11 between the thickness-limiting plate 7 and the casting plate 6. When the solution flows through the area where the heater 8 is located, crystal nuclei will form in the solution due to the temperature increase. The crystal nuclei will gradually grow into single crystal wafers under the continuous heating of the heater 8. The thickness between the thickness-limiting plate 7 and the casting plate 6 can be adjusted as needed, so the thickness of the single crystal growth is equal to the thickness between the thickness-limiting plate 7 and the casting plate 6. Because fresh single crystal growth solution is continuously supplied to the area where heater 8 is located through pump 1, input pipe 2, branch pipe 3, and branch 4, single crystals can grow continuously, uniformly, and stably in an environment with constant temperature and solution concentration. Furthermore, as the growth time increases, the single crystal will grow laterally to obtain a large-area single crystal sheet with controllable thickness, while maintaining a constant thickness.

[0049] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A perovskite single crystal thin film growth apparatus, characterized in that, It includes an input pipe (2), a branch pipe (3), a branch (4), a casting plate (6), and a thickness limiting plate (7); One side of the diversion pipe (3) is connected to the outlet of the input pipe (2), and the other side is connected to several branches (4); the several branches (4) are connected to the end of the casting plate (6); The thickness limiting plate (7) is set above the casting plate (6), and there is a gap between the casting plate (6) and the thickness limiting plate (7); the casting plate (6) and the thickness limiting plate (7) are provided with enclosures on both sides.

2. The perovskite single crystal thin film growth apparatus according to claim 1, characterized in that, The tail end of the casting plate (6) is mounted on the heater (8).

3. The perovskite single crystal thin film growth apparatus according to claim 1, characterized in that, Along the flow direction of the perovskite single crystal growth liquid, the tail of the casting plate (6) and the heater (8) are connected by a limiting frame (9).

4. The perovskite single crystal thin film growth apparatus according to claim 1, characterized in that, The cast plate (6) includes an integrally connected ramp portion (601) and flat plate portion (602), and the thickness limiting plate (7) includes an integrally connected inclined plate (701) and horizontal plate (702). An inclined thickness-limiting gap (10) is formed between the inclined surface of the slope section (601) and the inclined plate (701), and a horizontal thickness-limiting gap (11) is formed between the flat plate section (602) and the horizontal plate (702). The inclined thickness-limiting gap (10) and the horizontal thickness-limiting gap (11) are connected. The bottom width of the inclined thickness-limiting gap (10) and the width of the horizontal thickness-limiting gap (11) are equal.

5. The perovskite single crystal thin film growth apparatus according to claim 4, characterized in that, The thickness of the inclined thickness-limiting gap (10) gradually narrows from high to low.

6. The perovskite single crystal thin film growth apparatus according to claim 4, characterized in that, The slope section (601) has several holes (12) for connecting the branch (4) and the inclined thickness limit gap (10), and each hole (12) corresponds to a branch (4).

7. The perovskite single crystal thin film growth apparatus according to claim 1, characterized in that, The branch (4) is equally divided along the length of the diversion pipe (3).

8. The perovskite single crystal thin film growth apparatus according to claim 1, characterized in that, Each branch (4) is provided with a valve body (5).

9. The perovskite single crystal thin film growth apparatus according to claim 1, characterized in that, A pump body (1) is provided on the input pipe (2).

10. The perovskite single crystal thin film growth apparatus according to claim 1, characterized in that, The outlet of the input pipe (2) is connected to the middle position of the branch pipe (3).

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