Chip with variable thermal conductivity and reactor

Abstract

The chip comprises a heat transfer surface, a heating piece, a cavity and a medium channel, the heating piece is used for conveying heat to the heat transfer surface, the cavity is formed in the chip with the variable heat conductivity and used for containing a heat transfer medium, the heat transfer medium has fluidity, one end of the medium channel communicates with the cavity, and the other end of the medium channel communicates with the cavity. The other end of the medium channel penetrates out of the chip with the variable thermal conductivity, and the heat transfer medium is adjusted through the medium channel so as to change the thermal resistance of the cavity. The chip with variable thermal conductance can realize rapid heating and cooling of a target area, and can improve the sensitivity of temperature adjustment. The utility model relates to the field of temperature regulation.

Description

Technical Field

[0001] This application relates to the field of microelectromechanical systems, particularly to chips and reactors with variable thermal conductivity. Background Technology

[0002] The PCR process involves temperature control of the reaction chamber. Some related technologies utilize microfluidic chips to construct the reaction chamber, thereby facilitating high-throughput and efficient PCR reactions. However, the reduced volume of the reaction chamber increases its sensitivity to heat, demanding more precise temperature control.

[0003] In related technologies, heating chips are often used to control the temperature of the reaction chamber. The heating chip has heating electrodes processed on the substrate. By applying current to the heating electrodes, a thermal effect is generated to achieve the heating effect.

[0004] In related technologies, the heat generation of a heating chip is usually changed by adjusting the current. However, during the heating process, the heat generated by the heating chip is wasted. During the cooling process, the heat generated by the heating electrode will continue to be conducted to the target. Therefore, heating chips are prone to problems such as slow response speed and insufficient adjustment sensitivity. Summary of the Invention

[0005] This application aims to address at least one of the technical problems existing in the prior art. To this end, this application proposes a chip and reactor with variable thermal conductivity, which can improve the sensitivity of temperature regulation.

[0006] The variable thermal conductivity chip according to this application includes a heat transfer surface, a heating element, a chamber, and a medium channel. The heating element is used to transfer heat to the heat transfer surface. The chamber is formed inside the variable thermal conductivity chip and is used to contain a heat transfer medium. The heat transfer medium has fluidity. One end of the medium channel is connected to the chamber, and the other end of the medium channel extends out of the variable thermal conductivity chip. The heat transfer medium is adjusted through the medium channel to change the thermal resistance of the chamber.

[0007] The variable thermal conductivity chip provided in this application has at least the following technical effects: by changing the thermal resistance of the chamber, the thermal resistance distribution of the variable thermal conductivity chip can be changed. Since heat tends to be conducted along the path with lower thermal resistance, changing the thermal resistance of the chamber can adjust the heat conduction mode of the variable thermal conductivity chip. For example, when it is necessary to enhance the heat transfer from the heating element to the heat transfer surface, the thermal resistance on the path from the heating element to the heat transfer surface can be made relatively low, so that heat can be conducted from the heating element to the heat transfer surface more efficiently. When it is necessary to weaken the heat transfer from the heating element to the heat transfer surface, the reverse operation can be performed. Therefore, the variable thermal conductivity chip can achieve rapid heating and cooling of the target area and improve the sensitivity of temperature regulation.

[0008] According to some embodiments of this application, the medium channel is used to connect to an external pressure regulating device, and the chamber is able to change the pressure of the heat transfer medium in response to the control of the pressure regulating device, so as to change the thermal resistance of the chamber and thereby adjust the thermal resistance distribution of the variable thermal conductivity chip.

[0009] According to some embodiments of this application, the heat transfer medium is a gaseous medium.

[0010] According to some embodiments of this application, the variable thermal conductivity chip includes a temperature measuring element, which is used to provide feedback adjustment for the variable thermal conductivity chip.

[0011] According to some embodiments of this application, the temperature measuring element is a temperature measuring electrode, and the heating element is a heating electrode.

[0012] According to some embodiments of this application, the heating electrode and the temperature measuring electrode are disposed inside the chip with variable thermal conductivity.

[0013] According to some embodiments of this application, the temperature measuring electrode and the heating electrode are located on the side of the chamber near the heat transfer surface.

[0014] According to some embodiments of this application, the variable thermal conductivity chip includes a first functional layer located at the outermost layer, and the outer surface of the first functional layer in the thickness direction serves as the heat transfer surface.

[0015] According to some embodiments of this application, the variable thermal conductivity chip includes a second functional layer for constructing the chamber.

[0016] According to some embodiments of this application, the temperature measuring electrode is disposed in the first functional layer, and the heating electrode is disposed in the second functional layer.

[0017] According to some embodiments of this application, the variable thermal conductivity chip includes conductive pillars extending between the second functional layer and the first functional layer to conduct electricity between the heating electrode and the temperature measuring electrode.

[0018] According to some embodiments of this application, the first functional layer is provided with a first contact, and the second functional layer is provided with a second contact. The first contact is used to connect the temperature measuring electrode and the conductive post, and the second contact is used to connect the temperature measuring electrode and the conductive post.

[0019] According to some embodiments of this application, the variable thermal conductivity chip includes a first carrier layer, and the first functional layer and the second functional layer are respectively arranged on both sides of the first carrier layer.

[0020] According to some embodiments of this application, the conductive pillar is disposed on the first carrier layer.

[0021] According to some embodiments of this application, the conductive pillar includes a core and a base layer, the core extending in the thickness direction of the variable thermal conductivity chip, and the base layer wrapping the side surface of the core.

[0022] According to some embodiments of this application, the first carrier layer is further provided with a separating layer that encloses the conductive pillar.

[0023] According to some embodiments of this application, the first functional layer is provided with a first wiring structure, which is connected to the temperature measuring electrode and is used to connect to an external circuit.

[0024] According to some embodiments of this application, the first functional layer has a first window, which partially exposes the temperature measuring electrode. The first window has a first pad as the first wiring structure, and the first pad is connected to the temperature measuring electrode.

[0025] According to some embodiments of this application, the temperature measuring electrode and the heating electrode are disposed in the first functional layer.

[0026] According to some embodiments of this application, the variable thermal conductivity chip includes a first carrier layer, and the first functional layer and the second functional layer are respectively arranged on both sides of the first carrier layer.

[0027] According to some embodiments of this application, the first functional layer is provided with a first wiring structure, which is connected to the temperature measuring electrode and is used to connect to an external circuit.

[0028] According to some embodiments of this application, the first functional layer has a first window, which partially exposes the temperature measuring electrode. The first window has a first pad as the first wiring structure, and the first pad is connected to the temperature measuring electrode.

[0029] According to some embodiments of this application, the first functional layer is provided with a second wiring structure, the second wiring structure is connected to the heating electrode, and the second wiring structure is used to connect to an external circuit.

[0030] According to some embodiments of this application, the first functional layer has a second window, which partially exposes the heating electrode. The second window has a second pad as the second wiring structure, and the second pad is in communication with the heating electrode.

[0031] According to some embodiments of this application, the variable thermal conductivity chip includes a second carrier layer located on the side of the second functional layer away from the heat transfer surface, and the cavity is formed by the second functional layer and the second carrier layer surrounding each other.

[0032] According to some embodiments of this application, the second functional layer has a groove on the side opposite to the heat transfer surface, and the second carrier layer covers the groove to define the chamber.

[0033] According to some embodiments of this application, the second functional layer and the second carrier layer are bonded together.

[0034] According to some embodiments of this application, the second functional layer and the second carrier layer are eutectic bonded, and the variable thermal conductivity chip further includes a bonding layer connecting the second functional layer and the second carrier layer.

[0035] According to some embodiments of this application, the second functional layer includes a support rib that protrudes from the bottom of the groove.

[0036] According to some embodiments of this application, the height of the support rib is less than the depth of the groove.

[0037] According to some embodiments of this application, the variable thermal conductivity chip includes a first carrier layer, which is located between the first functional layer and the second functional layer.

[0038] According to some embodiments of this application, the first carrier layer has a first through hole, the first functional layer has a second through hole, the second functional layer has a third through hole, the two ends of the first through hole are respectively connected to the second through hole and the third through hole to form the medium channel, and the third through hole is connected to the chamber.

[0039] According to some embodiments of this application, the first carrier layer has a first through hole, the first functional layer has a second through hole, the first through hole communicates with the second through hole to form the medium channel, the chamber penetrates the second functional layer, and the first through hole communicates with the chamber.

[0040] The reactor provided in this application includes a reaction device and a variable thermal conductivity chip provided in this application, wherein the reaction device is attached to the heat transfer surface of the variable thermal conductivity chip.

[0041] According to some embodiments of this application, the reaction device is a reaction chip.

[0042] According to some embodiments of this application, the reaction apparatus includes an amplification chamber, and the reaction apparatus is used for PCR amplification.

[0043] The reactor provided in this application includes the variable thermal conductivity chip provided in this application, and therefore the reactor has the beneficial effects provided by the variable thermal conductivity chip, which will not be elaborated here. Attached Figure Description

[0044] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0045] Figure 1 This is a schematic diagram of the structure of a variable thermal conductivity chip according to an embodiment of the first aspect of this application;

[0046] Figure 2 This is a schematic diagram of the structure of a variable thermal conductivity chip according to an embodiment of the second aspect of this application;

[0047] Figure 3 This is a schematic flowchart illustrating a method for fabricating a variable thermal conductivity chip according to a second aspect embodiment of this application.

[0048] Figure 4 This is a schematic flowchart illustrating a method for fabricating a variable thermal conductivity chip according to a second aspect embodiment of this application.

[0049] Figure 5 This is a schematic flowchart illustrating a method for fabricating a variable thermal conductivity chip according to a second aspect embodiment of this application.

[0050] Figure 6 This is a schematic flowchart illustrating a method for fabricating a variable thermal conductivity chip according to a second aspect embodiment of this application.

[0051] Figure 7 This is a schematic flowchart illustrating a method for fabricating a variable thermal conductivity chip according to a second aspect embodiment of this application.

[0052] Figure 8 This is a schematic diagram of the structure of a variable thermal conductivity chip according to an embodiment of the third aspect of this application;

[0053] Figure 9 This is a schematic flowchart of a method for manufacturing a variable thermal conductivity chip according to a third aspect embodiment of this application;

[0054] Figure 10 This is a schematic flowchart illustrating a method for fabricating a variable thermal conductivity chip according to a third aspect embodiment of this application.

[0055] Figure label:

[0056] Heating electrodes 1110, 2110, 3110; chambers 1120, 2120, 3120; medium channels 1130, 2130, 3130; temperature measuring electrodes 1140, 2140, 3140; heat transfer surfaces 1150, 2150, 3150.

[0057] First functional layers 2200, 3200, first windows 2210, 3210, first pads 2220, 3220, first contact 2230, second vias 2240, 3240, second window 3250, second pad 3260, first sublayers 2270, 3270, second sublayers 2280, 3280, third sublayer 3290;

[0058] Second functional layers 2300, 3300, second contact 2310, third via 2320, groove 2330, 3330, support rib 2340, 3340, fourth sub-layer 2350, fifth sub-layer 2360, sixth sub-layer 2370;

[0059] First carrier layers 2400 and 3400, conductive pillar 2410, core 2411, base layer 2412, separator layer 2420, first vias 2430 and 3430, process hole 2440, substrate 2450 and 3450.

[0060] The second carrier layer is 2500 and 3500;

[0061] Bonding layers 2600, 3600;

[0062] First mask 2710, third mask 3720. Detailed Implementation

[0063] The embodiments of this application are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0064] In the description of this application, it should be understood that the orientation descriptions, such as up, down, front, back, left, right, etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0065] In the description of this application, "several" means one or more, "more than" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0066] In the description of this application, unless otherwise expressly defined, terms such as "setup," "installation," and "connection" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this application in conjunction with the specific content of the technical solution.

[0067] In related technologies, experimental design is gradually developing towards miniaturization and refinement. For example, reaction chambers are constructed within microfluidic chips, which require only a small amount of sample to complete the experiment, thus helping to build high-throughput reaction systems.

[0068] However, this also brings new problems. For example, there is a need for temperature control in experimental steps such as PCR. Due to the reduction in the total amount of reaction raw materials, the reaction process is more sensitive to changes in the input heat, and is more prone to phenomena such as temperature overshoot.

[0069] In related technologies, the heat output of heating elements is usually changed by power control (e.g., by adjusting the voltage and current). However, heating elements are prone to problems such as slow response speed and insufficient sensitivity of adjustment.

[0070] Taking a heating chip with integrated heating electrodes as an example, assuming that the heating chip is currently operating at the first temperature, both the heating electrode and the outer surface of the heating chip are at the first temperature. At the next moment, the power of the heating electrode increases and the temperature rises to the second temperature, thereby creating a temperature difference with the outer surface. The heat generated by the heating electrode is evenly conducted to the outer surface of the heating chip, causing the temperature of the outer surface to rise.

[0071] However, only a portion of the outer surface of the heating chip (referred to here as the heat transfer surface) is in contact with the target to be heated (such as a microfluidic chip or other microdevices) to play a role in temperature control of the target. This means that the heat conducted to other outer surfaces is basically wasted, and the power of the heating electrode is not fully converted into the temperature rise of the target, resulting in a decrease in the heat transfer efficiency of the heating electrode to the target, and the target is difficult to heat up quickly with the heating electrode.

[0072] In scenarios where the heating electrode cools down rapidly, the residual heat from the heating electrode will still be conducted to the target after the heating electrode power decreases. This can lead to the target being overcharged due to the residual heat in some scenarios, while in other scenarios the target may not be able to cool down rapidly with the heating electrode.

[0073] Therefore, this application provides a chip with variable thermal conductivity to improve the sensitivity of temperature regulation.

[0074] For example, refer to Figure 1The variable thermal conductivity chip provided in the first aspect of this application includes a heat transfer surface 1150, a heating element, a chamber 1120, and a medium channel 1130. The heating element is used to transfer heat to the heat transfer surface 1150. The chamber 1120 is formed inside the variable thermal conductivity chip and is used to contain the heat transfer medium. One end of the medium channel 1130 is connected to the chamber 1120, and the other end of the medium channel 1130 extends out of the variable thermal conductivity chip. The heat transfer medium is adjusted through the medium channel 1130 to change the thermal resistance of the chamber 1120.

[0075] In use, the heat transfer surface 1150 contacts the target to be heated (e.g., a microdevice). The heat generated by the heating element is conducted to the target through the variable thermal conductivity chip. When the heat dissipation from the target to the outside is equal to the heat input from the heating element to the target, the target temperature remains stable; when the heat dissipation from the target to the outside is greater than the heat input from the heating element to the target, the target temperature decreases; and when the heat dissipation from the target to the outside is less than the heat input from the heating element to the target, the target temperature increases.

[0076] By changing the thermal resistance of the chamber 1120, the thermal resistance distribution of the variable thermal conductivity chip can be changed (that is, the thermal resistance of a certain area is relatively high and the thermal resistance of another area is relatively low). Since heat tends to be conducted along the path with lower thermal resistance, changing the thermal resistance of the chamber 1120 can adjust the heat conduction mode of the variable thermal conductivity chip.

[0077] For example, when it is necessary to enhance the heat transfer from the heating element to the heat transfer surface 1150, the thermal resistance on the path from the heating element to the heat transfer surface 1150 can be relatively reduced, so that heat can be conducted from the heating element to the heat transfer surface 1150 more efficiently, thereby more fully converting the power of the heating element into the target heat.

[0078] When it is necessary to reduce the heat transfer from the heating element to the heat transfer surface 1150, the operation can be reversed. For example, when the target is close to the target temperature, while reducing the power of the heating element, the thermal resistance on the path from the heating element to the heat transfer surface 1150 can be relatively increased, so that the residual heat in the variable thermal conductivity chip is relatively more conducted to other surfaces outside the heat transfer surface 1150, thereby so that the heat received by the target is just enough to heat the target to the target temperature.

[0079] This application controls a chip with variable thermal conductivity by adjusting heat conduction, that is, by regulating the distribution of heat (which can be characterized by power) generated by the heating element to control the temperature rise and fall of the target. When most of the power of the heating element is converted into heat conducted to the target, the target can rapidly rise in temperature along with the heating element; when only a small portion of the power of the heating element is converted into heat conducted to the target, depending on the specific experimental design, the target can either avoid temperature overshoot or rapidly cool down by mitigating the influence of residual heat from the heating element.

[0080] Therefore, chips with variable thermal conductivity can achieve rapid heating and cooling of the target area, thereby improving the sensitivity of temperature regulation.

[0081] It is understood that the variable thermal conductivity chip of this application is suitable for use in combination with a fluid heat transfer medium that can flow within the chamber 1120 and the medium channel 1130. Therefore, it is suitable for controlling the heat transfer medium through an external control device to achieve the purpose of changing the thermal resistance.

[0082] Optionally, the heat transfer medium can be a liquid medium, a gaseous medium, or a combination of both. Depending on the specific choice of heat transfer medium, different methods can be used to change the thermal resistance.

[0083] For example, when the heat transfer medium includes a liquid medium and a gaseous medium, the thermal resistance can be changed by changing the proportion of the liquid medium and the gaseous medium in the chamber 1120; as another example, when the heat transfer medium includes a gaseous medium, the thermal resistance can be changed by changing the pressure of the gaseous medium.

[0084] Considering the potential for uneven mixing between liquid and gaseous media, leading to uneven thermal resistance distribution within chamber 1120, the heat transfer medium can be made solely of gaseous medium. The thermal resistance is altered by changing the pressure of the gaseous medium. This method ensures consistent pressure throughout chamber 1120, resulting in uniform thermal resistance. In this case, an external control device can be an air pump connected to the medium channel 1130 via a pipe. The air pump injects or extracts the gaseous medium through the medium channel 1130, thereby changing the pressure.

[0085] Of course, the above are just some examples of ways to change thermal resistance. Based on the ideas in this application, other implementation schemes for heat transfer media and control devices can be generated, and different implementation schemes may be used in combination. These will not be elaborated here.

[0086] It should be noted that the thermal resistance of conventional liquid and gaseous media is generally greater than that of solid media. In other words, the thermal resistance of chamber 1120 is often greater than that of the non-chamber solid portion of the variable thermal conductivity chip. To more fully utilize the heat generated by the heating element during heating, the heating element can optionally be located on the side of chamber 1120 closer to the heat transfer surface 1150. Clearly, in this case, the heating element is located inside the variable thermal conductivity chip rather than on its outer surface.

[0087] Chips with variable thermal conductivity can use resistance temperature detectors (RTDs), heating electrodes, etc., as heating elements. Considering that chips with variable thermal conductivity are generally fabricated using semiconductor processing techniques, in... Figure 1In the illustrated embodiment, a heating electrode 1110 is used as the heating element. The heating electrode 1110 can also be fabricated using semiconductor processing techniques (sputtering, deposition, etc.), thus allowing for easier integration with other parts of the chip with variable thermal conductivity.

[0088] As mentioned above, optionally, the heating electrode 1110 is disposed inside the chip with variable thermal conductivity, which also prevents the heating electrode 1110 from being exposed to the external environment and protects the heating electrode 1110.

[0089] It is understood that, since an external power source is required to power the heating electrode 1110, in this application, "the heating electrode 1110 is disposed inside the chip with variable thermal conductivity" means that most of the heating electrode 1110 is covered by other parts of the chip with variable thermal conductivity. In some cases, a small part of the heating electrode 1110 is allowed to be exposed to the outside in order to connect to the power source.

[0090] Of course, a more conventional approach is to set up a wiring structure (such as terminals, wiring lines, etc.) in the chip with variable thermal conductivity. The power supply and heating electrode 1110 are connected through the wiring structure, so that the heating electrode 1110 does not need to be exposed to the external environment, thereby ensuring that the heating electrode 1110 is completely covered and protected.

[0091] As mentioned above, in order to transfer heat to the heat transfer surface 1150 more efficiently, the heating electrode 1110 may optionally be located on the side of the chamber 1120 close to the heat transfer surface 1150.

[0092] To achieve more precise and sensitive control of the temperature of the heat transfer surface 1150, the variable thermal conductivity chip may optionally include a temperature sensor for feedback adjustment of the variable thermal conductivity chip, thereby reducing temperature control errors.

[0093] Similar to the arrangement of heating elements, considering that chips with variable thermal conductivity are generally fabricated using semiconductor processing techniques, in Figure 1 In the illustrated embodiment, a temperature sensing electrode 1140 is used as the temperature sensing element. Furthermore, the temperature sensing electrode 1140 is disposed inside the variable thermal conductivity chip to avoid exposure to the external environment.

[0094] Of course, this application does not exclude the use of other types of temperature measuring devices, which will not be elaborated here.

[0095] Similar to the arrangement of the heating element, in order to measure the temperature of the heat transfer surface 1150 more accurately and sensitively, the temperature measuring electrode 1140 may optionally be located on the side of the chamber 1120 near the heat transfer surface 1150. Alternatively, the temperature measuring electrode 1140 may also be positioned between the heat transfer surface 1150 and the heating electrode 1110.

[0096] It is important to emphasize that while the example of the variable thermal conductivity chip described in this application demonstrates how changes in thermal conductivity can be used to more sensitively regulate temperature and meet the requirements of increasingly miniaturized reaction systems, the implementation of this technical concept does not depend on a variable thermal conductivity chip. As long as the thermal conductivity around the heating element can change, the sensitivity of temperature regulation can be improved by utilizing these changes. Furthermore, this technical concept can be applied in various scenarios, such as qPCR (Quantitative Real-time PCR) or other experimental scenarios that are highly sensitive to heat input.

[0097] Therefore, embodiments of the first aspect of this application also provide a temperature control method based on this technical concept. According to the temperature control method of this application, the heat conduction from the heating element to the heated target is adjusted by changing the thermal resistance distribution around the heating element.

[0098] Clearly, the temperature control method is suitable not only for controlling the variable thermal conductivity chip of this application, but also for controlling other surrounding heating elements whose thermal conductivity can change.

[0099] For example, a chamber 1120 is provided around the heating element. By adjusting the heat transfer medium in the chamber 1120, the thermal resistance of the chamber 1120 is changed, thereby changing the thermal resistance distribution around the heating element.

[0100] The temperature control method is suitable for controlling the variable thermal conductivity chip of this application, and therefore also has the beneficial effects of the variable thermal conductivity chip, which will not be elaborated here.

[0101] Alternatively, the temperature control method can adjust the heat transfer medium by at least one of the following methods:

[0102] The chamber 1120 contains various heat transfer media with different compositions, and the proportions of each heat transfer media are varied.

[0103] Change the composition of the heat transfer medium;

[0104] The heat transfer medium includes a gaseous medium, and the pressure of the gaseous medium is changed.

[0105] For example, in Figure 1 In the illustrated embodiment, the heat transfer medium includes a gaseous medium, and the thermal resistance of the chamber 1120 is changed by changing the pressure of the gaseous medium.

[0106] Specifically, the chamber 1120 and the heating element are integrated into the variable thermal conductivity chip of this application. The variable thermal conductivity chip also includes a heat transfer surface 1150 for contacting the heated target. Since the chamber 1120 is located on the side of the heating element away from the heat transfer surface 1150, the temperature control method responds to a signal to increase the temperature of the heat transfer surface 1150 by decreasing the air pressure in the chamber 1120, and responds to a signal to decrease the temperature of the heat transfer surface 1150 by increasing the air pressure in the chamber 1120. The decrease in air pressure in the chamber 1120 leads to an improvement in the thermal insulation performance of the chamber 1120, resulting in more heat being conducted to the side where the heat transfer surface 1150 is located and less heat being conducted to the side where the chamber 1120 is located compared to before the air pressure change. The increase in air pressure in the chamber 1120 leads to an increase in the thermal conductivity of the chamber 1120, resulting in less heat being conducted to the side where the heat transfer surface 1150 is located and more heat being conducted to the side where the chamber 1120 is located compared to before the air pressure change.

[0107] It should be noted that the temperature control method of this application can also be combined with power control methods to regulate the temperature of the target object.

[0108] Specifically, when it is necessary to increase the temperature, on the one hand, the power of the heating element is controlled so that the heating element generates more heat per unit time; on the other hand, the heat transfer medium is controlled so that more of the heat generated by the heating element is conducted to the heat transfer surface 1150. The two methods are superimposed to achieve more efficient and sensitive temperature control.

[0109] The embodiments of the first aspect of this application also provide a method for fabricating a variable thermal conductivity chip, which is suitable for fabricating the variable thermal conductivity chip of this application.

[0110] Methods for fabricating chips with variable thermal conductivity include:

[0111] A heating element is provided to regulate the temperature of the heat transfer surface 1150 of the variable thermal conductivity chip. A chamber 1120 and a dielectric channel 1130 are formed within the variable thermal conductivity chip.

[0112] As can be understood, as previously described, the heating element can be a heating electrode 1110. Furthermore, the heating electrode 1110 can be disposed inside the chip with variable thermal conductivity.

[0113] The chamber 1120 is used to contain the heat transfer medium, which has fluidity. The medium channel 1130 is used to connect the chamber 1120 and the outside of the variable thermal conductivity chip. The heat transfer medium in the chamber 1120 is adjusted through the medium channel 1130 to change the thermal resistance of the chamber 1120, thereby adjusting the thermal resistance distribution of the variable thermal conductivity chip.

[0114] Optionally, a heating electrode 1110 may be provided on the side of the chamber 1120 near the heat transfer surface 1150.

[0115] Optionally, the method of fabricating a chip with variable thermal conductivity may also include setting a temperature sensing element.

[0116] It is understandable that the temperature sensing element can be the temperature sensing electrode 1140. Furthermore, the temperature sensing electrode 1140 can be placed inside the chip with variable thermal conductivity.

[0117] Optionally, a temperature measuring electrode 1140 is provided on the side of the chamber 1120 near the heat transfer surface 1150.

[0118] Reference Figure 2 The second aspect of this application provides a chip with variable thermal conductivity fabricated using semiconductor processing technology.

[0119] exist Figure 2 In the illustrated embodiment, the variable thermal conductivity chip includes a first functional layer 2200 located on the outermost layer, and the outer surface of the first functional layer 2200 in the thickness direction serves as a heat transfer surface 2150.

[0120] Optionally, in order to place the heating element on the side of the chamber 2120 near the heat transfer surface 2150, the variable thermal conductivity chip also includes a second functional layer 2300, which is used to construct the chamber 2120.

[0121] At this time, the heating element and temperature measuring element can be disposed in the first functional layer 2200, the second functional layer 2300, or other structural layers located between the heat transfer surface 2150 and the chamber 2120 (e.g., other possible functional layers). For example, refer to... Figure 2 Temperature measuring electrode 2140 is disposed in the first functional layer 2200, and heating electrode 2110 is disposed in the second functional layer 2300.

[0122] Placing the temperature measuring electrode 2140 closer to the heat transfer surface 2150 helps to measure the temperature of the heat transfer surface 2150 more accurately.

[0123] Optionally, the variable thermal conductivity chip may also include a conductive element that extends between the second functional layer 2300 and the first functional layer 2200 to conduct heat to the heating electrode 2110 and temperature to the temperature measuring electrode 2140.

[0124] In this way, the temperature sensing electrode 2140 and the heating electrode 2110 can be connected through a shared circuit and power supply, which simplifies the wiring structure of the variable thermal conductivity chip. For example, since the parameters of the heating electrode 2110 are known, the resistance of the temperature sensing electrode 2140 can be calculated by measuring the voltage and current in the circuit, thereby obtaining the temperature data of the heat transfer surface 2150.

[0125] It is understandable that the wiring structure can be set on the side of the temperature measuring electrode 2140 (that is, the first functional layer 2200) or on the side of the heating electrode 2110 (that is, the second functional layer 2300).

[0126] For example, the first functional layer 2200 is provided with a first wiring structure, which is connected to the temperature measuring electrode 2140 and is used to connect to an external circuit.

[0127] Specifically, refer to Figure 2 The first functional layer 2200 has a first window 2210, which partially exposes the temperature measuring electrode 2140. The first window 2210 has a first pad 2220 as a first wiring structure, and the first pad 2220 is connected to the temperature measuring electrode 2140.

[0128] Of course, the temperature measuring function of the temperature measuring electrode 2140 can also be achieved through other circuit design methods. The first wiring structure can also use metallized plug holes, etc. In addition, the variable thermal conductivity chip can also be designed without conductive components, and instead the heating electrode 2110 and the temperature measuring electrode 2140 can be connected to the external circuit through wiring structures (that is, a second wiring structure is set for the heating electrode 2110).

[0129] The relevant design details can be found in the existing circuit design schemes, and will not be elaborated here.

[0130] For example, refer to Figure 2 The conductive component may include a conductive post 2410 and a first contact 2230 and a second contact 2310 disposed at both ends of the conductive post 2410. The first contact 2230 is used to contact the temperature measuring electrode 2140, and the second contact 2310 is used to contact the heating electrode 2110. Distinguishing between the conductive post 2410, the first contact 2230, and the second contact 2310 facilitates the selection of different structures and materials for different parts of the conductive component as needed, and allows for the selection of appropriate manufacturing processes for different parts of the conductive component based on their respective characteristics, thus helping the conductive component to better achieve its conductive function.

[0131] For example, in Figure 2 In the illustrated embodiment, the variable thermal conductivity chip further includes a first carrier layer 2400, a first functional layer 2200, and a second functional layer 2300, which are respectively arranged on both sides of the first carrier layer 2400. In this case, conductive posts 2410 can be disposed on the first carrier layer 2400, a first contact 2230 on the first functional layer 2200, and a second contact 2310 on the second functional layer 2300.

[0132] For example, refer to Figure 3The conductive pillar 2410 may further include a core 2411 and a substrate layer 2412. The core 2411 extends in the thickness direction of the variable thermal conductivity chip, and the substrate layer 2412 wraps around the side surface of the core 2411. Dividing the conductive pillar 2410 into the core 2411 and the substrate layer 2412 allows for the selection of different materials and fabrication processes for the core 2411 and the substrate layer 2412 as needed.

[0133] On the one hand, the core 2411 and the substrate 2412 can be made of different materials so that the core 2411 can be wrapped and protected by the substrate 2412. On the other hand, the core 2411 and the substrate 2412 can be made of different manufacturing processes, which helps to optimize the manufacturing method of the variable thermal conductivity chip.

[0134] It is understandable that in order to increase conductivity and reduce resistance, the diameter of the conductive pillar 2410 needs to be increased. However, conductive components are generally made of metal, while the main body of the variable thermal conductivity chip (such as other parts of the first carrier layer 2400) is generally made of non-metals such as silicon or silicides. It is difficult to directly manufacture the conductive pillar 2410 by electroplating, and other manufacturing processes are often time-consuming and costly.

[0135] At this point, a base layer 2412 can be fabricated on the inner wall surface of the first carrier layer 2400 by sputtering or other feasible methods, and then the core 2411 can be obtained by electroplating based on the base layer 2412, thereby reducing the manufacturing cost.

[0136] Alternatively, the first carrier layer 2400 may also be provided with a separating layer 2420 that encloses the conductive pillar 2410.

[0137] The cavity 2120 of the second aspect embodiment will now be described. Optionally, in order to construct the cavity 2120, the variable thermal conductivity chip may further include a second carrier layer 2500, the second carrier layer 2500 being located on the side of the second functional layer 2300 opposite to the heat transfer surface 2150, and the cavity 2120 being formed by the second functional layer 2300 and the second carrier layer 2500.

[0138] It is understood that the chamber 2120 is formed by fabricating a groove in at least one of the second functional layer 2300 and the second carrier layer 2500. For ease of fabrication, the groove can be fabricated in either the second functional layer 2300 or the second carrier layer 2500.

[0139] For example, the second functional layer 2300 has a groove 2330 on the side opposite to the heat transfer surface 2150, and the second carrier layer 2500 covers the groove 2330 to define the chamber 2120. Since only the second functional layer 2300 needs to have the groove 2330 fabricated, the second carrier layer 2500 only needs to cover the opening of the groove 2330 facing the second carrier layer 2500, and there is no need to fabricate another groove aligned with the groove 2330, thereby helping to simplify the fabrication process of the variable thermal conductivity chip.

[0140] Optionally, the second functional layer 2300 and the second carrier layer 2500 are bonded together. The bonding process ensures a tight bond between the second functional layer 2300 and the second carrier layer 2500, guaranteeing that the sealing performance of the chamber 2120 meets the requirements and preventing leakage failure during internal pressure changes.

[0141] The specific bonding method can refer to the prior art related to semiconductor packaging. For example, the second functional layer 2300 and the second carrier layer 2500 can adopt eutectic bonding (e.g., gold-tin eutectic bonding). The chip with variable thermal conductivity also includes a bonding layer 2600 connected between the second functional layer 2300 and the second carrier layer 2500.

[0142] It is important to note that in order to maximize the influence on the thermal resistance distribution in the chip with variable thermal conductivity, the cavity 2120 needs to have the largest possible volume. This results in a large suspended area of ​​the second carrier layer 2500 during fabrication, making the walls of the cavity 2120 prone to bending and deformation under pressure. Therefore, the second functional layer 2300 may include support ribs 2340, which protrude from the bottom of the groove 2330. The support ribs 2340 serve to abut and support the second carrier layer 2500.

[0143] However, if the support rib 2340 also comes into contact with the second carrier layer 2500 during use, the heat can bypass the chamber 2120 and be conducted to the second carrier layer 2500 along the solid medium through the support rib 2340, thereby weakening the influence of the chamber 2120 on the thermal resistance.

[0144] To address this issue, on the one hand, the number of support ribs 2340 can be limited to avoid using too many. On the other hand, the height of the support ribs 2340 can be limited to be less than the depth of the tank 2330. This means that the support ribs 2340 only contact and support the second carrier layer 2500 after it has deformed beyond the allowable range. In other cases, the support ribs 2340 and the second carrier layer 2500 are separated by the heat transfer medium, and heat must pass through the heat transfer medium to be conducted from the support ribs 2340 to the second carrier layer 2500, thus mitigating the negative impact of the support ribs 2340.

[0145] Finally, the medium channel 2130 of the second aspect embodiment will be introduced. It can be understood that the medium channel 2130 only needs to serve the function of connecting the chamber 2120 and the external control device. Therefore, the design of the medium channel 2130 is relatively flexible, and the layout of the medium channel 2130 can be designed according to the manufacturing process of the chip with variable thermal conductivity.

[0146] In the second aspect embodiment, the variable thermal conductivity chip is constructed by stacking multiple structural layers (e.g., first functional layer 2200, second functional layer 2300, first carrier layer 2400, second carrier layer 2500). To facilitate processing, the dielectric channel 2130 may optionally extend in the stacking direction (i.e., the thickness direction of the variable thermal conductivity chip) and penetrate one side of the variable thermal conductivity chip in the thickness direction.

[0147] For example, the first carrier layer 2400 has a first through hole 2430, the first functional layer 2200 has a second through hole 2240, and the second functional layer 2300 has a third through hole 2320. The two ends of the first through hole 2430 are connected to the second through hole 2240 and the third through hole 2320 respectively to form a medium channel 2130, and the third through hole 2320 is connected to the chamber 2120.

[0148] In other words, the medium channel 2130 extends from the side where the heat transfer surface 2150 is located to the chip with variable thermal conductivity. At this time, the side where the heat transfer surface 2150 is located can be defined as the front side of the chip with variable thermal conductivity. When in use, the chip with variable thermal conductivity is placed with the front side exposed (preferably facing upwards). External micro-devices, circuits, control devices, etc. are all connected to the chip with variable thermal conductivity through the front side, which facilitates operation and use.

[0149] The second aspect of this application also provides a method for fabricating a variable thermal conductivity chip, which is suitable for fabricating the variable thermal conductivity chip of this application.

[0150] The fabrication method for a chip with variable thermal conductivity includes the following specific steps:

[0151] Step S210: Form the first carrier layer 2400.

[0152] It is understandable that the first carrier layer 2400 is the foundation of the variable thermal conductivity chip. Based on the first carrier layer 2400, other structural layers of the variable thermal conductivity chip (such as the first functional layer 2200, the second functional layer 2300, etc.) are further fabricated through semiconductor processes such as etching and deposition.

[0153] The first carrier layer 2400 may also include a substrate 2450, upon which the other structural components of the first carrier layer 2400 are formed. The substrate 2450 can generally be made of materials commonly used in the semiconductor and MEMS fields, such as silicon and silicides, which will not be elaborated further here.

[0154] Optionally, forming a first carrier layer 2400 includes providing a conductive post 2410, the conductive post 2410 penetrating the first carrier layer 2400, one end of the conductive post 2410 being used to conduct the temperature measuring electrode 2140, and the other end of the conductive post 2410 being used to conduct the heating electrode 2110.

[0155] Although the conductive pillars 2410 can be set by inserting pre-prepared conductive pillars 2410 into the holes of the substrate 2450, the process of inserting pre-prepared conductive pillars 2410 is relatively complicated and the quality is difficult to guarantee due to the small size of the variable thermal conductivity chip.

[0156] Therefore, optionally, a semiconductor fabrication process can be used to form conductive pillars 2410 on a substrate 2450, thereby simplifying the fabrication process and improving the fabrication quality.

[0157] For example, forming the first carrier layer 2400 may include: providing a substrate 2450; etching a process hole 2440 in the substrate 2450; and forming a conductive pillar 2410 in the process hole 2440.

[0158] Specifically, refer to Figure 3 The etching process hole 2440 may further include: coating a first mask 2710 on one side of the substrate 2450; patterning the first mask 2710 to expose the etching location of the process hole 2440; etching the substrate 2450 from the side where the first mask 2710 is located; and removing the first mask 2710.

[0159] The etching depth of the process hole 2440 is determined based on the height of the conductive post 2410. Optionally, the etching depth of the process hole 2440 can be slightly greater than the designed height of the conductive post 2410, thus allowing for further processing of the conductive post 2410. For example, the etching depth of the process hole 2440 is 12 μm.

[0160] Next, forming the conductive pillar 2410 may further include: sputtering a base layer 2412 of the conductive pillar 2410 onto the inner wall of the process hole 2440; and electroplating a core 2411 of the conductive pillar 2410 onto the base layer 2412, wherein the core 2411 fills the process hole 2440. Sputtering can form a metallic base layer 2412 on the surface of a non-metallic substrate 2450, so that the core 2411 can be further formed on the base layer 2412. Combining sputtering and electroplating processes can efficiently and accurately form the desired conductive pillar 2410.

[0161] The metal material used for sputtering and the metal material used for electroplating can be the same or different. For example, considering the bonding ability between the material and the substrate 2450, titanium tungsten or titanium can be used as the sputtering material; considering cost and conductivity, copper can be used as the electroplating material.

[0162] Optionally, forming the conductive pillar 2410 before sputtering the substrate layer 2412 may further include depositing a separator layer 2420 on the sidewall of the process via 2440. Exemplarily, silicon oxide is deposited to form the separator layer 2420, the separator layer 2420 having a thickness of 1 μm.

[0163] Understandably, in Figure 3 and Figure 4 In the illustrated embodiment, the process hole 2440 is a blind hole, and two conductive pillars 2410 are finally fabricated. However, the process hole 2440 can also be a through hole, as long as it can form a space to accommodate the conductive pillars 2410. The number of conductive pillars 2410 can also be one or more, and this application does not limit this.

[0164] in addition, Figure 3 This application only illustrates one embodiment of forming conductive pillars 2410 in process holes 2440. Other feasible semiconductor fabrication processes can also be used to fabricate conductive pillars 2410. For example, conductive pillars 2410 can also be fabricated by sintering. Specific process flow designs can be found in the relevant prior art, and will not be elaborated here.

[0165] It is understood that, in addition to the conductive post 2410, the first carrier layer 2400 may optionally be provided with a first via 2430. Correspondingly, forming the first carrier layer 2400 also includes forming the first via 2430.

[0166] For example, in order to simplify the manufacturing process of the first via 2430, forming the first carrier layer 2400 may further include: forming the first via 2430 based on the process hole 2440.

[0167] Specifically, refer to Figure 3 and Figure 4After the conductive pillar 2410 is formed, a portion of the conductive pillar 2410 in the process hole 2440 can be etched away to form the first via 2430.

[0168] In other words, when etching the process hole 2440, in addition to the process hole 2440 used to set the conductive post 2410, an additional process hole 2440 is etched to form the first via 2430. Next, the conductive post 2410 is fabricated according to the normal process flow, so the process hole 2440 used to form the first via 2430 is also filled by the conductive post 2410. Finally, the excess conductive post 2410 is removed to obtain the desired first via 2430.

[0169] In this way, the conductive pillar 2410 can serve as a support during other fabrication processes, preventing any suspended areas in the first carrier layer 2400 and improving the quality of the variable thermal conductivity chip. Furthermore, the different materials of the conductive pillar 2410 and the substrate 2450 facilitate subsequent removal of the conductive pillar 2410.

[0170] Alternatively, before forming the conductive pillar 2410, a second mask can be used to protect a portion of the process holes 2440; conductive pillars 2410 can be formed in the remaining process holes 2440; the second mask can be removed so that the protected process holes 2440 form the first via 2430.

[0171] However, at this time, the process hole 2440 used to form the first via 2430 lacks filling. During the manufacturing process, if the strength of other structural layers (such as the second mask, the first functional layer 2200, the second functional layer 2300, etc.) in the area where the process hole 2440 is located is insufficient, it is easy to cause local deformation due to suspension, which will affect the flatness of the variable thermal conductivity chip and reduce the quality of the variable thermal conductivity chip.

[0172] Optionally, at the end of the step of forming the first carrier layer 2400, both sides of the first carrier layer 2400 can be polished. Polishing can obtain a flatter surface.

[0173] For example, polishing can specifically employ chemical mechanical polishing (CMP), which is a polishing process in the semiconductor field. CMP achieves excellent flatness by combining physical abrasion and chemical etching, thereby facilitating the subsequent fabrication of other structural layers of the chip with variable thermal conductivity based on the first carrier layer 2400.

[0174] Furthermore, during the manufacturing process, the surface of the conductive post 2410 may oxidize due to prolonged exposure to the environment, affecting the reliability of the conductive component. Chemical mechanical polishing can also remove any existing oxide layer, improving the manufacturing quality of the conductive component. (Refer to...) Figure 3 When the process hole 2440 is a blind hole, chemical mechanical polishing can also remove excess substrate 2450, base layer 2412, etc., so that the two ends of the conductive post 2410 are exposed in a preset manner.

[0175] The specific process parameters for chemical mechanical polishing can be found in existing technologies and will not be elaborated here.

[0176] Besides chemical mechanical polishing, other methods such as wafer thinning machines, precision grinding machines, and double-sided precision film machines can also be used to achieve polishing, as long as the flatness requirements of polishing can be met and the implementation of other steps is not affected. This application does not impose any restrictions on these methods.

[0177] Step S220: A first functional layer 2200 is formed on one side of the first carrier layer 2400. The first functional layer 2200 is provided with a temperature measuring electrode 2140 and a heat transfer surface 2150.

[0178] Optionally, the temperature measuring electrode 2140 is located inside the first functional layer 2200. To this end, forming the first functional layer 2200 may include: forming a first sublayer 2270 on the surface of the first carrier layer 2400; forming the temperature measuring electrode 2140 on the surface of the first sublayer 2270; forming a second sublayer 2280 on the surface of the first sublayer 2270, with the first sublayer 2270 and the second sublayer 2280 enclosing the temperature measuring electrode 2140.

[0179] Furthermore, in order to create a conductive component, forming the first functional layer 2200 may also include: forming a first contact 2230 penetrating the first sub-layer 2270 before forming the temperature sensing electrode 2140, the first contact 2230 connecting the temperature sensing electrode 2140 and the conductive post 2410.

[0180] For example, a first sublayer 2270 and a second sublayer 2280 can be formed by deposition, and a first contact 2230 and a temperature sensing electrode 2140 can be formed by lift-off. Specifically, refer to Figure 4 First, a first sublayer 2270 is deposited. Then, an area for setting the first contact 2230 is etched on the first sublayer 2270. The first contact 2230 and the temperature sensing electrode 2140 are fabricated simultaneously using a lift-off process (at this time, the materials of the two are the same). Finally, a second sublayer 2280 is deposited to cover the temperature sensing electrode 2140.

[0181] Understandably, lift-off process is a conventional photolithography process. In addition to lift-off process, other processes such as etching can be used to fabricate the required first contact 2230 and temperature sensing electrode 2140. The deposition process used for the first sublayer 2270 and the second sublayer 2280 can be material vapor deposition or chemical vapor deposition. For example, the first sublayer 2270 and the second sublayer 2280 can be deposited by plasma enhanced chemical vapor deposition (PECVD). In addition to deposition, other processes can of course be used to fabricate the first sublayer 2270 and the second sublayer 2280.

[0182] The specific process can be determined based on the actual production conditions, and this application does not impose any restrictions on it.

[0183] Additionally, by way of example, the thickness of the first sublayer 2270 can be 1 μm, and the material of the first sublayer 2270 can be silicon oxide; the thickness of the second sublayer 2280 can be 2 μm to 2.5 μm, and the material of the second sublayer 2280 can be silicon oxide; the material of the first contact 2230 can be aluminum; and the material of the temperature measuring electrode 2140 can be titanium and platinum.

[0184] Reference Figure 2 and Figure 5 Optionally, the temperature sensing electrode 2140 and external circuitry can be connected by providing a first wiring structure in the first functional layer 2200. Therefore, forming the first functional layer 2200 also includes forming a first wiring structure to connect the temperature sensing electrode 2140.

[0185] For example, a first window 2210 exposing the temperature sensing electrode 2140 can be formed by etching the second sublayer 2280, and a first pad 2220 serving as a first wiring structure can be formed in the first window 2210.

[0186] Alternatively, the medium channel 2130 may also include a second via 2240 located in the first functional layer 2200, and forming the first functional layer 2200 may further include etching to form the second via 2240 after depositing the second sublayer 2280.

[0187] Step S230: A second functional layer 2300 is formed on the other side of the first carrier layer 2400, and a heating electrode 2110 is disposed on the second functional layer 2300.

[0188] Optionally, the heating electrode 2110 is located inside the second functional layer 2300. To this end, forming the second functional layer 2300 may include: depositing a fourth sublayer 2350 on the surface of the first carrier layer 2400; forming the heating electrode 2110 on the surface of the fourth sublayer 2350; and depositing a fifth sublayer 2360 on the surface of the fourth sublayer 2350, wherein the fourth sublayer 2350 and the fifth sublayer 2360 enclose the heating electrode 2110.

[0189] Furthermore, in order to create a conductive element, forming the second functional layer 2300 may also include: forming a second contact 2310 penetrating the fourth sub-layer 2350 before forming the heating electrode 2110, the second contact 2310 being conductive to the heating electrode 2110 and the conductive post 2410.

[0190] For example, the second contact 2310 can be formed by lift-off, and the heating electrode 2110 can be formed by sputtering.

[0191] The second functional layer 2300 also needs to be provided with a chamber 2120. To this end, forming the second functional layer 2300 may also include: depositing a sixth sublayer 2370 on the surface of the fifth sublayer 2360, and forming a groove 2330 for constructing the chamber 2120 in the sixth sublayer 2370.

[0192] Optionally, the medium channel 2130 also includes a third via 2320 located in the second functional layer 2300. To this end, forming the second functional layer 2300 further includes etching the third via 2320 after depositing the sixth sublayer 2370.

[0193] Additionally, by way of example, the thickness of the fourth sublayer 2350 can be 1 μm, and the material of the fourth sublayer 2350 can be silicon oxide; the thickness of the fifth sublayer 2360 can be 2 μm to 2.5 μm, and the material of the fifth sublayer 2360 can be silicon nitride; the thickness of the sixth sublayer 2370 can be 2 μm to 2.5 μm, and the material of the sixth sublayer 2370 may include silicon oxide.

[0194] Optionally, the method for fabricating a variable thermal conductivity chip further includes step S240: forming a second carrier layer 2500 on the surface of the second functional layer 2300, the second carrier layer 2500 covering the groove 2330 to define the chamber 2120.

[0195] For example, forming a second carrier layer 2500 includes: providing a second carrier layer 2500; eutectic bonding a second functional layer 2300 and a second carrier layer 2500.

[0196] Specifically, the material of the second carrier layer 2500 can be high borosilicate, and the second carrier layer 2500 and the second functional layer 2300 are eutectic bonded with gold and tin.

[0197] Additionally, by way of example, the thickness of the second carrier layer 2500 can be set to 600 μm.

[0198] It should be emphasized that, based on the manufacturing principle of this application, the steps S210 to S240 disclosed in the method for manufacturing a variable thermal conductivity chip, as well as the specific process flow in each step, can be flexibly executed in different sequences according to actual needs.

[0199] For example, optionally, some of the process flows in steps S210, S220 and S230 may be performed alternately or in parallel, as needed.

[0200] For example, it is understood that after the first carrier layer 2400 is fabricated, the conductive post 2410 is exposed and is easily oxidized again if it is not covered and protected by other structures in time, which will affect the performance of the conductive component.

[0201] Therefore, referring to Figure 4 First, the first sublayer 2270 and the fourth sublayer 2350 can be deposited. Then, the first functional layer 2200 can be formed based on the first sublayer 2270, and the second functional layer 2300 can be formed based on the fourth sublayer 2350.

[0202] In other words, steps S220 and S230 are performed alternately. First, a part of the process flow of step S220 is executed, using the first sub-layer 2270 to protect one end of the conductive pillar 2410. Then, the process flow of step S230 is switched to execute a part of the process flow of step S230, using the fourth sub-layer 2350 to protect the other end of the conductive pillar 2410, thereby ensuring that the conductive pillar 2410 is not affected in subsequent process flows.

[0203] Furthermore, some processes in step S210 can be postponed and carried out in parallel with some processes in steps S220 and S230.

[0204] Specifically, refer to Figure 4 In step S210, the process route of etching away the conductive pillar 2410 to form the first via 2430 is adopted. At this time, the process of etching away the conductive pillar 2410 in step S210 can be delayed, so that the first via 2430, the second via 2240 and the third via 2320 can be etched in one etching, which effectively improves the efficiency of the fabrication method of the variable thermal conductivity chip.

[0205] It should be noted that the etching process should be performed after the structural layers of the first functional layer 2200 and the second functional layer 2300 have been fabricated, so that the first via 2430, the second via 2240, and the third via 2320 can be etched simultaneously. Furthermore, the etching process can be performed before the second functional layer 2300 is bonded to the second carrier layer 2500 to avoid accidental damage to the second carrier layer 2500 during etching.

[0206] In other words, the second sublayer 2280 can be deposited before the second carrier layer 2500 is formed, so that etching can be performed after the second sublayer 2280 is deposited and before the second carrier layer 2500 is formed.

[0207] Understandably, referring to Figure 5 At this point, it is only necessary to deposit the second sublayer 2280. As for other structural features set in the second sublayer 2280, they can be made after the second carrier layer 2500 is formed. This application does not impose any restrictions on this.

[0208] certainly, Figure 4 and Figure 5 The diagram only illustrates one possible sequence arrangement of the process flow, and the process flow sequence of the method for fabricating a variable thermal conductivity chip is not limited to this.

[0209] For example, refer to Figure 6 After the second carrier layer 2500 is formed, the first functional layer 2200 can be formed based on the first sub-layer 2270.

[0210] Correspondingly, after forming the second carrier layer 2500, the second via 2240 and the first via 2430 can be etched in one go.

[0211] For example, refer to Figure 7 Step S220 can be executed after step S240 is completed.

[0212] Specifically, in step S210, the process route using process hole 2440 as a blind via is adopted. In this case, chemical mechanical polishing can be performed in two steps. First, chemical mechanical polishing is performed on one open end of process hole 2440. Then, step S230 is executed to fabricate the fourth sub-layer 2350 protecting the conductive pillar 2410, and steps S230 and S240 are completed sequentially. After this, a second chemical mechanical polishing is performed, followed by step S220 to fabricate the first sub-layer 2270 protecting the conductive pillar 2410, and step S220 is completed sequentially.

[0213] Reference Figure 8 The embodiments of the third aspect of this application provide another chip with variable thermal conductivity fabricated using semiconductor processing technology.

[0214] Similar to the embodiments of the second aspect, in Figure 8 In the illustrated embodiment, the variable thermal conductivity chip also includes a first functional layer 3200 located on the outermost layer, with the outer surface of the first functional layer 3200 in the thickness direction serving as a heat transfer surface 3150. The variable thermal conductivity chip also includes a second functional layer 3300, which is used to construct the chamber 3120.

[0215] The difference between the third aspect embodiment and the second aspect embodiment is that the temperature measuring electrode 3140 and the heating electrode 3110 are disposed in the first functional layer 3200.

[0216] Since both the temperature sensing electrode 3140 and the heating electrode 3110 are located close to the heat transfer surface 3150, it helps to control the heat transfer surface 3150 more accurately and sensitively.

[0217] Optionally, the temperature measuring electrode 3140 can be placed between the heat transfer surface 3150 and the heating electrode 3110, so that the temperature measuring electrode 3140 is closer to the heat transfer surface 3150, thereby improving the accuracy of temperature measurement.

[0218] Optionally, unlike the embodiments of the second aspect, the variable thermal conductivity chip employs a scheme where the temperature sensing electrode 3140 and the heating electrode 3110 are not conductive. There is no need to place a conductive element between the first functional layer 3200 and the second functional layer 3300.

[0219] To simplify the structural design, both the temperature sensing electrode 3140 and the heating electrode 3110 can be connected to the external circuit in the first functional layer 3200, thereby shortening the length of the relevant wiring structure.

[0220] For example, refer to Figure 8 The first functional layer 3200 is provided with a first wiring structure, which is connected to the temperature measuring electrode 3140 and is used to connect to an external circuit. Simultaneously, the first functional layer 3200 is provided with a second wiring structure, which is connected to the heating electrode 3110 and is also used to connect to an external circuit.

[0221] Specifically, the first functional layer 3200 may have a first window 3210, which partially exposes the temperature measuring electrode 3140. The first window 3210 is provided with a first pad 3220 as a first wiring structure, and the first pad 3220 is connected to the temperature measuring electrode 3140.

[0222] The first functional layer 3200 may also have a second window 3250, which partially exposes the heating electrode 3110. The second window 3250 has a second pad 3260 as a second wiring structure, and the second pad 3260 is connected to the heating electrode 3110.

[0223] Correspondingly, refer to Figure 8 The variable thermal conductivity chip includes a first carrier layer 3400, a first functional layer 3200, and a second functional layer 3300, which are respectively arranged on both sides of the first carrier layer 3400. In this case, the first carrier layer 3400 does not need to be provided with conductive pillars.

[0224] Similar to the embodiments of the second aspect, in Figure 9 In the illustrated embodiment, the variable thermal conductivity chip includes a second carrier layer 3500 located on the side of the second functional layer 3300 away from the heat transfer surface 3150, and a cavity 3120 is formed between the second functional layer 3300 and the second carrier layer 3500.

[0225] Optionally, a groove 3330 can be formed in the second functional layer to define the cavity 3120 in conjunction with the second carrier layer 3500. The second functional layer 3300 and the second carrier layer 3500 can also be eutecticly bonded together by the bonding layer 3600, and the support ribs 3340 can support the possible deformation of the cavity 3120.

[0226] The difference between the third aspect embodiment and the second aspect embodiment is that, referring to... Figure 8 Since no heating electrode 3110 is provided in the second functional layer 3300, the chamber 3120 can optionally penetrate the second functional layer 3300, with the surface of the first carrier layer 3400 serving as the wall of the chamber 3120, thereby maximizing the use of the available space of the second functional layer 3300.

[0227] Correspondingly, when forming the medium channel 3130, the second functional layer 3300 does not need to have a third via. Specifically, refer to... Figure 8 The first carrier layer 3400 has a first through-hole 3430, and the first functional layer 3200 has a second through-hole 3240. The first through-hole 3430 is connected to the second through-hole 3240, thereby forming a medium channel 3130. Obviously, at this time, the first through-hole 3430 is directly connected to the chamber 3120.

[0228] Other technical features not described in the variable thermal conductivity chip of the third aspect embodiment can be found in the relevant content of the second aspect embodiment, and will not be repeated here.

[0229] The embodiments of the third aspect of this application also provide a method for fabricating a variable thermal conductivity chip, which is suitable for fabricating the variable thermal conductivity chip of this application.

[0230] The fabrication method for a chip with variable thermal conductivity includes the following specific steps:

[0231] Step S310: Form the first carrier layer 3400.

[0232] The difference between step S310 and step S210 is that, since the first carrier layer 3400 does not have conductive pillars in the embodiment of the third aspect, the corresponding process flow of step S310 can be omitted.

[0233] For example, forming the first carrier layer 3400 may include: providing a substrate 3450 as the first carrier layer 3400; and etching to form a first via 3430.

[0234] Step S320: A first functional layer 3200 is formed on one side of the first carrier layer 3400, and a temperature measuring electrode 3140, a heating electrode 3110 and a heat transfer surface 3150 are provided in the first functional layer 3200.

[0235] The difference between steps S320 and S220 is that, since the first functional layer 3200 simultaneously provides both the temperature sensing electrode 3140 and the heating electrode 3110, an additional process is required to fabricate the heating electrode 3110. Since no conductive element is needed, the process related to the first contact can be omitted.

[0236] For example, refer to Figure 9 Forming the first functional layer 3200 may include: forming a first sublayer 3270 on the surface of the first carrier layer 3400; forming a heating electrode 3110 on the surface of the first sublayer 3270; forming a second sublayer 3280 on the surface of the first sublayer 3270, with the first sublayer 3270 and the second sublayer 3280 enclosing the heating electrode 3110; forming a temperature measuring electrode 3140 on the surface of the second sublayer 3280; forming a third sublayer 3290 on the surface of the second sublayer 3280; and the second sublayer 3280 and the third sublayer 3290 enclosing the temperature measuring electrode 3140.

[0237] As mentioned earlier, placing the temperature measuring electrode 3140 between the heat transfer surface 3150 and the heating electrode 3110 helps to improve the accuracy of temperature measurement.

[0238] Specifically, the first sublayer 3270 can be formed by wet oxidation, the second sublayer 3280 and the third sublayer 3290 can be formed by deposition, and the heating electrode 3110 and the temperature measuring electrode 3140 can be formed by lift-off.

[0239] Furthermore, the thickness of the first sublayer 3270 can be 0.5 μm, and the material of the first sublayer 3270 includes silicon oxide; the thickness of the second sublayer 3280 can be 1 μm, and the material of the second sublayer 3280 includes silicon oxide; the thickness of the third sublayer 3290 is 1 μm, and the material of the third sublayer 3290 includes silicon oxide; the material of the temperature measuring electrode 3140 may include titanium and platinum, and the material of the heating electrode 3110 may include molybdenum.

[0240] Optionally, in order to form the medium channel 2130, forming the first functional layer 3200 further includes: after depositing the third sublayer 3290, etching to form the second via 3240.

[0241] Optionally, forming the first functional layer 3200 may further include: after depositing the third sublayer 3290, forming a first wiring structure for the conductive temperature sensing electrode 3140 and a second wiring structure for the conductive heating electrode 3110.

[0242] In the third embodiment, the wiring structure can also take the form of a solder pad.

[0243] Specifically, a first window 3210 can be etched on the surface of the third sub-layer 3290, exposing the temperature measuring electrode 3140; and a first pad 3220 as a first wiring structure can be formed in the first window 3210.

[0244] A second window 3250 can be etched on the surface of the third sublayer 3290, exposing the heating electrode 3110; a second pad 3260 as a second wiring structure is formed in the second window 3250.

[0245] Step S330: A second functional layer 3300 is formed on the other side of the first carrier layer 3400.

[0246] The difference between step S330 and step S320 is that, since there is no need to set up the heating electrode 3110, the process related to the heating electrode 3110 can be omitted in step S330.

[0247] For example, forming a second functional layer 3300 includes: depositing the second functional layer 3300 on the surface of the first carrier layer 3400; and etching a groove 3330 for constructing the chamber 3120 on the surface of the second functional layer 3300.

[0248] In addition, the thickness of the second functional layer 3300 can be 2.5 μm.

[0249] Optionally, the method for fabricating a variable thermal conductivity chip further includes step S340: forming a second carrier layer 3500 on the surface of the second functional layer 3300, the second carrier layer 3500 covering the groove 3330 to define the chamber 3120.

[0250] Step S340 is similar to step S240, and exemplarily, forming a second carrier layer 3500 includes: providing a second carrier layer 3500; eutectic bonding a second functional layer 3300 and a second carrier layer 3500.

[0251] It should be emphasized that, based on the manufacturing principle of this application, steps S310 to S340 of the method for manufacturing a variable thermal conductivity chip, as well as the specific process flow in each step, can also be flexibly executed in different sequences according to actual needs.

[0252] For example, optionally, some of the process flows in steps S310, S320 and S330 may be performed alternately or in parallel, as needed.

[0253] For example, after forming the groove 3330, the first via 3430 and the second via 3240 can be etched simultaneously in one etching process.

[0254] Specifically, refer to Figure 10 Forming the first via 3430 and the second via 3240 may include forming a third mask 3720 on the surface of the tank 3330; etching from the side where the first functional layer 3200 is located to form the first via 3430 and the second via 3240; and removing the third mask 3720.

[0255] Other technical features not described in the method for fabricating the variable thermal conductivity chip in the third aspect embodiment can be found in the relevant content of the second aspect embodiment, and will not be repeated here.

[0256] This application also provides a reactor, which includes a reaction device and the variable thermal conductivity chip of this application. The reaction device is attached to the heat transfer surface of the variable thermal conductivity chip, thereby enabling the variable thermal conductivity chip to regulate the temperature of the reaction device.

[0257] The reaction apparatus can be used in various applications where temperature control is required, such as PCR amplification and tissue sample testing.

[0258] For example, the reaction apparatus can be a microdevice in the biological field, such as a reaction chip. More specifically, the reaction apparatus can include an amplification chamber for PCR amplification.

[0259] Of course, in addition to the above methods, the reaction device can also be used in other feasible ways, and the reactor is not limited to applications in the biological field. This application does not impose any restrictions on this.

[0260] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0261] In some alternative embodiments, the mentioned functions / operations may occur outside the order in which the steps are described. Furthermore, the embodiments presented and described herein are provided by way of example to provide a more comprehensive understanding of the technology. The disclosed methods are not limited to the operations and logical flows presented herein. Alternative embodiments are contemplated, in which the order of various operations is altered and sub-operations described as part of a larger operation are performed independently.

[0262] Although embodiments of this application have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the claims and their equivalents.

Claims

1. A chip with variable thermal conductivity, characterized in that, include: Heat transfer surface; A heating element, the heating element being used to transfer heat to the heat transfer surface; A chamber formed inside the variable thermal conductivity chip, the chamber being used to contain a heat transfer medium having fluidity; A medium channel, one end of which is connected to the chamber and the other end of which extends out of the variable thermal conductivity chip, is used to adjust the heat transfer medium to change the thermal resistance of the chamber.

2. The chip with variable thermal conductivity according to claim 1, characterized in that, The medium channel is used to connect to an external pressure regulating device. The chamber can change the pressure of the heat transfer medium in response to the control of the pressure regulating device, so as to change the thermal resistance of the chamber and thereby adjust the thermal resistance distribution of the variable thermal conductivity chip.

3. The chip with variable thermal conductivity according to claim 2, characterized in that, The heat transfer medium is a gaseous medium.

4. The chip with variable thermal conductivity according to claim 1, characterized in that, The variable thermal conductivity chip includes a temperature sensing element, which is used to provide feedback adjustment for the variable thermal conductivity chip.

5. The chip with variable thermal conductivity according to claim 4, characterized in that, The temperature measuring element is a temperature measuring electrode, and the heating element is a heating electrode.

6. The chip with variable thermal conductivity according to claim 5, characterized in that, The heating electrode and the temperature measuring electrode are disposed inside the chip with variable thermal conductivity.

7. The chip with variable thermal conductivity according to claim 6, characterized in that, The temperature measuring electrode and the heating electrode are located on the side of the chamber near the heat transfer surface.

8. The chip with variable thermal conductivity according to claim 7, characterized in that, The variable thermal conductivity chip includes a first functional layer located at the outermost layer, and the outer surface of the first functional layer in the thickness direction serves as the heat transfer surface.

9. The chip with variable thermal conductivity according to claim 8, characterized in that, The variable thermal conductivity chip includes a second functional layer for constructing the chamber.

10. The chip with variable thermal conductivity according to claim 9, characterized in that, The temperature measuring electrode is disposed in the first functional layer, and the heating electrode is disposed in the second functional layer.

11. The chip with variable thermal conductivity according to claim 10, characterized in that, The variable thermal conductivity chip includes a conductive element that extends between the second functional layer and the first functional layer to conduct electricity between the heating electrode and the temperature measuring electrode.

12. The chip with variable thermal conductivity according to claim 11, characterized in that, The conductive component includes a conductive post and a first contact and a second contact disposed at both ends of the conductive post.

13. The chip with variable thermal conductivity according to claim 12, characterized in that, The variable thermal conductivity chip includes a first carrier layer, and the first functional layer and the second functional layer are respectively arranged on both sides of the first carrier layer.

14. The chip with variable thermal conductivity according to claim 13, characterized in that, The conductive post is disposed on the first carrier layer, the first contact is disposed on the first functional layer, and the second contact is disposed on the second functional layer.

15. The chip with variable thermal conductivity according to claim 14, characterized in that, The conductive pillar includes a core and a base layer. The core extends in the thickness direction of the variable thermal conductivity chip, and the base layer wraps around the side surface of the core.

16. The chip with variable thermal conductivity according to claim 14, characterized in that, The first carrier layer is further provided with a separating layer that encloses the conductive pillar.

17. The chip with variable thermal conductivity according to claim 10, characterized in that, The first functional layer is provided with a first wiring structure, which is connected to the temperature measuring electrode and is used to connect to an external circuit.

18. The chip with variable thermal conductivity according to claim 17, characterized in that, The first functional layer has a first window that partially exposes the temperature measuring electrode. The first window has a first pad that serves as the first wiring structure and is connected to the temperature measuring electrode.

19. The chip with variable thermal conductivity according to claim 9, characterized in that, The temperature measuring electrode and the heating electrode are disposed in the first functional layer.

20. The chip with variable thermal conductivity according to claim 19, characterized in that, The variable thermal conductivity chip includes a first carrier layer, and the first functional layer and the second functional layer are respectively arranged on both sides of the first carrier layer.

21. The chip with variable thermal conductivity according to claim 19, characterized in that, The first functional layer is provided with a first wiring structure, which is connected to the temperature measuring electrode and is used to connect to an external circuit.

22. The chip with variable thermal conductivity according to claim 21, characterized in that, The first functional layer has a first window that partially exposes the temperature measuring electrode. The first window has a first pad that serves as the first wiring structure and is connected to the temperature measuring electrode.

23. The chip with variable thermal conductivity according to claim 19, characterized in that, The first functional layer is provided with a second wiring structure, which is connected to the heating electrode and is used to connect to an external circuit.

24. The chip with variable thermal conductivity according to claim 23, characterized in that, The first functional layer has a second window, which partially exposes the heating electrode. The second window has a second pad that serves as the second wiring structure and is connected to the heating electrode.

25. The chip with variable thermal conductivity according to claim 9, characterized in that, The variable thermal conductivity chip includes a second carrier layer located on the side of the second functional layer away from the heat transfer surface, and the cavity is formed by the second functional layer and the second carrier layer surrounding each other.

26. The chip with variable thermal conductivity according to claim 25, characterized in that, The second functional layer has a groove on the side opposite to the heat transfer surface, and the second carrier layer covers the groove to define the chamber.

27. The chip with variable thermal conductivity according to claim 26, characterized in that, The second functional layer and the second carrier layer are bonded together.

28. The chip with variable thermal conductivity according to claim 27, characterized in that, The second functional layer and the second carrier layer are eutectic bonded, and the variable thermal conductivity chip further includes a bonding layer connecting the second functional layer and the second carrier layer.

29. The chip with variable thermal conductivity according to claim 26, characterized in that, The second functional layer includes a support rib that protrudes from the bottom of the groove.

30. The chip with variable thermal conductivity according to claim 29, characterized in that, The height of the support rib is less than the depth of the groove.

31. The chip with variable thermal conductivity according to claim 25, characterized in that, The variable thermal conductivity chip includes a first carrier layer, which is located between the first functional layer and the second functional layer.

32. The chip with variable thermal conductivity according to claim 31, characterized in that, The first carrier layer has a first through hole, the first functional layer has a second through hole, and the second functional layer has a third through hole. The two ends of the first through hole are respectively connected to the second through hole and the third through hole to form the medium channel. The third through hole is connected to the chamber.

33. The chip with variable thermal conductivity according to claim 31, characterized in that, The first carrier layer has a first through hole, the first functional layer has a second through hole, the first through hole is connected to the second through hole to form the medium channel, the chamber penetrates the second functional layer, and the first through hole is connected to the chamber.

34. A reactor, characterized in that, The reactor includes a reaction device and a variable thermal conductivity chip as described in any one of claims 1 to 33, wherein the reaction device is attached to the heat transfer surface of the variable thermal conductivity chip.

35. The reactor according to claim 34, characterized in that, The reaction device is a reaction chip.

36. The reactor according to claim 34, characterized in that, The reaction apparatus includes an amplification chamber and is used for PCR amplification.

Images