Image sensor and electronic device
By setting doping adjustment regions and contact arrays in CMOS image sensors, the problem of process instability caused by uneven pattern density is solved, and stable photoelectric conversion performance and consistent image quality of pixel arrays are achieved.
Patent Information
- Application Number
- CN202520293349.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-21
- Publication Date
- 2025-11-21
- Estimated Expiration
- 2035-02-21
AI Technical Summary
Existing CMOS image sensors are prone to process instability when the layout pattern density is uneven, especially when there is a large difference in pattern density between the pixel area and adjacent areas, resulting in uneven photoresist morphology, which affects full-well capacity and image quality.
A doping adjustment region, including an N-type doping adjustment ring and a guard ring, is set around the pixel array. The pattern density is increased to improve the uniformity of the photoresist morphology. A contact array is set in the doping adjustment region to extract photoelectrons and reduce electron overflow.
It improves the process stability of the pixel array, makes the photoelectric conversion performance of edge and middle pixels consistent, reduces the instability of ion implantation process, avoids pixel overexposure, and improves the dynamic range and image quality of image sensor.
Smart Images
Figure CN223584629U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model belongs to the field of semiconductor technology relates to an image sensor and electronic equipment. BACKGROUND
[0002] CMOS image sensor (CIS) is a kind of image sensor based on CMOS (complementary metal oxide semiconductor) process manufacturing, it utilizes CMOS process to integrate photosensitive element (such as photodiode) and signal processing circuit on the same chip, realizes image acquisition and signal processing.CMOS image sensor generally adopts active pixel sensor (Active Pixel Sensor, APS) as its pixel unit, and the array based on this pixel unit can be imaged, each pixel sensor unit has photosensitive unit and at least one transistor, the function of photosensitive unit is to realize photoelectric conversion, converts incident photon into electron, the function of each transistor is to realize the reset, transmission and selection of signal as switch and realize the amplification of signal as amplifier, the transistor in APS is generally metal oxide semiconductor field effect transistor (MOSFET).
[0003] In semiconductor process, due to the uneven density of layout pattern, it is easy to cause unexpected phenomenon in actual process.Especially in CMOS image sensor, the pattern density of pixel area is larger, but the pattern density of the area adjacent to it is very different from that of pixel area, which is easy to cause uneven photoresist topography after exposure in photolithography process.
[0004] Full well capacity (FWC) refers to the maximum charge that each pixel can accommodate, that is, the maximum number of photo-generated electrons stored by the pixel.When the pixel reaches full well capacity, it can no longer receive more photo-generated electrons, at which time the pixel is saturated.Full well capacity directly affects the dynamic range and image quality of image sensor, wherein the dynamic range refers to the ratio between the maximum signal and the minimum signal that the sensor can handle, the larger the full well capacity, the higher the dynamic range generally.In CIS process, due to the demand of photodiode (PD) full well, ion implantation needs to be carried out in a relatively deep substrate, and a relatively thick photoresist is needed, and the thicker the photoresist, the more the difference in the area with large difference in pattern density will be deteriorated.
[0005] Therefore, how to provide a new technical scheme to reduce the process instability caused by pattern density has become an important technical problem to be solved by the person skilled in the art.
[0006] It should be noted that the above introduction of the technical background is only for the convenience of clearly and completely describing the technical scheme of the present application and facilitating the understanding of those skilled in the art. The above technical scheme cannot be considered as known to those skilled in the art only because it is described in the part of the background of the present application. Practical new type content
[0007] In view of the above-mentioned defects of the prior art, the purpose of the present application is to provide an image sensor and an electronic device, which are used to solve the problem of unstable process of the image sensor in the prior art.
[0008] To achieve the above-mentioned purpose and other related purposes, the present application provides an image sensor, comprising a pixel array region, a guard ring region and a peripheral circuit region arranged at the periphery of the pixel array region, the pixel array region is provided with a pixel array, the pixel array comprises a plurality of pixel units arranged in an array, each pixel unit comprises a light-doped region, characterized in that the image sensor further comprises:
[0009] a doping adjustment region formed synchronously with the light-doped region, arranged at the periphery of the pixel array;
[0010] wherein, the edge of the pixel array and the edge of the pixel array region have a transition region, the doping adjustment region is arranged in the transition region and / or the guard ring region.
[0011] Optionally, the light-doped region comprises an N-type doped region of a photodiode, and the doping adjustment region comprises an N-type doping adjustment region; and / or, the guard ring region is arranged at the periphery of the pixel array region, and the peripheral circuit region is arranged at the periphery of the guard ring region.
[0012] Optionally, a contact array is arranged on the doping adjustment region, and the doping adjustment region is connected to a preset potential through the contact array.
[0013] Optionally, a contact array is arranged on the N-type doping adjustment region, and the doping adjustment region is connected to a preset potential through the contact array.
[0014] Optionally, the N-type doping adjustment region comprises a first N-type doping adjustment ring arranged at the periphery of the pixel array and a second N-type doping adjustment ring arranged at the periphery of the first N-type doping adjustment ring.
[0015] Optionally, the first N-type doping adjustment ring and the second N-type doping adjustment ring are both located in the transition region.
[0016] Optionally, the guard ring region is provided with at least one N-type guard ring, the first N-type doping adjustment ring is located in the transition region and is close to or adjacent to the edge of the pixel array region, and the second N-type doping adjustment ring is located in the guard ring region and is located in the N-type guard ring closest to the transition region.
[0017] Optionally, the first N-type doping adjustment ring is provided with a notch, or at least one part of the first N-type doping adjustment ring is disconnected.
[0018] Optionally, the image sensor further comprises a P-type doping guard region, and the P-type doping guard region is located in the transition region and is located between the pixel array and the first N-type doping adjustment ring.
[0019] Optionally, the N-type doping adjustment region is provided in the guard ring region, the guard ring region is provided with at least one P-type guard ring and at least one N-type guard ring, and the N-type doping adjustment region is located in the N-type guard ring closest to the transition region.
[0020] Optionally, the image sensor further comprises a virtual pixel array, and the virtual pixel array is located in the transition region and comprises a plurality of virtual pixel units arranged in an array, each virtual pixel unit comprises a virtual N-type doping region of a virtual photodiode, and a virtual isolation structure is provided between the virtual N-type doping regions of adjacent two virtual photodiodes.
[0021] Optionally, the guard ring region is further provided with at least one P-type guard ring, and the virtual isolation structure extends to the guard ring region and the closest P-type guard ring.
[0022] Optionally, the image sensor further comprises an isolation structure provided between adjacent light-sensitive doping regions, the virtual isolation structure is consistent with the structure of the isolation structure, and the virtual N-type doping region of the virtual photodiode is consistent with the structure of the light-sensitive doping region.
[0023] The utility model further provides an electronic equipment comprising the image sensor of any one of the above schemes.
[0024] As described above, the image sensor of the present application includes a pixel array region, a guard ring region and a peripheral circuit region arranged from inside to outside, the pixel array region is provided with a pixel array, the pixel array includes a plurality of pixel units arranged in an array, each pixel unit includes a light-doped region, wherein the image sensor further includes a doped adjustment region formed synchronously with the light-doped region, the doped adjustment region is arranged at the periphery of the pixel array, there is a transition region between the edge of the pixel array and the edge of the pixel array region, and the doped adjustment region is arranged in the transition region and / or the guard ring region. By adding the doped adjustment region, the present application improves the pattern density near the pixel array, so that the photoresist pattern morphology of the ion implantation region for defining the light-doped region can be more uniform during the manufacturing process of the image sensor, thereby reducing the ion implantation process instability caused by the pattern density, and finally making the pixel units located in the middle region of the pixel array and the pixel units located in the edge region of the pixel array have more consistent photoelectric conversion performance. BRIEF DESCRIPTION OF DRAWINGS
[0025] Figure 1 A planar layout diagram of the N-type doped region shown as a pixel array and the N-type doped adjustment region arranged around the periphery of the pixel array in the first embodiment.
[0026] Figure 2 A planar layout diagram of the N-type doped region shown as a pixel array and the N-type doped adjustment region arranged around the periphery of the pixel array in the second embodiment.
[0027] Figure 3 A planar layout diagram of the N-type doped region shown as a pixel array and the N-type doped adjustment region arranged around the periphery of the pixel array in the third embodiment.
[0028] Figure 4 A planar layout diagram of the N-type doped region shown as a pixel array and the N-type doped adjustment region arranged around the periphery of the pixel array in the fourth embodiment.
[0029] Figure 5 A planar layout diagram of the N-type doped region shown as a pixel array and the N-type doped adjustment region arranged around the periphery of the pixel array in the fifth embodiment.
[0030] Figure 6 A planar layout diagram of the N-type doped region shown as a pixel array and the N-type doped adjustment region arranged around the periphery of the pixel array in the sixth embodiment.
[0031] Figure 7 A planar layout diagram of the N-type doped region shown as a pixel array and the N-type doped adjustment region arranged around the periphery of the pixel array in the seventh embodiment.
[0032] Figure 8A planar layout of the N-type doped region shown as a pixel array and the N-type doped adjustment region shown as a peripheral region surrounding the pixel array in the eighth embodiment.
[0033] Figure 9 A process flow chart of a manufacturing method of the image sensor of the present application.
[0034] Legend of reference numerals
[0035] 100 pixel array
[0036] 101 N-type doped region
[0037] 200 N-type doped adjustment region
[0038] 201 first N-type doped adjustment ring
[0039] 202 second N-type doped adjustment ring
[0040] 300 isolation structure
[0041] 401 P-type guard ring
[0042] 402 N-type guard ring
[0043] 500 contact portion
[0044] 600 P-type doped guard region
[0045] 700 virtual pixel array
[0046] 701 virtual N-type doped region
[0047] 800 virtual isolation structure
[0048] A pixel array region
[0049] B guard ring region
[0050] M transition region
[0051] S1-S3 steps DETAILED DESCRIPTION
[0052] The embodiments of the present application will be described in detail by way of specific examples. Other advantages and effects of the present application will be easily understood by those skilled in the art from the description of the present application. The present application can also be implemented or applied in other different embodiments, and the details in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present application.
[0053] It should be emphasized that the term "comprises / comprising" when used in this specification is taken to mean the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps, components or groups thereof.
[0054] Features described and / or illustrated with respect to one implementation can be used in the same or similar manner in one or more other implementations, in combination with or in place of features in other implementations.
[0055] As described in the detailed description of the embodiments of the present application, the schematic diagram showing the structure of the device will be partially enlarged without the general proportion for the convenience of description, and the schematic diagram is only an example, which should not limit the scope of protection of the present application. In addition, the three-dimensional spatial dimensions of length, width and depth should be included in actual production.
[0056] For the convenience of description, spatial relationship words such as "under", "below", "lower", "under", "above", "upper" and the like can be used herein to describe the relationship of one element or feature shown in the drawings with other elements or features. It will be understood that these spatial relationship words are intended to include other directions of the device in use or operation in addition to the directions depicted in the drawings. In addition, when a layer is referred to as "between" two layers, it can be the only layer between the two layers, or one or more intervening layers can also be present.
[0057] In the context of the present application, the structure in which the described first feature is "on" the second feature can include an embodiment in which the first and second features form direct contact, and can also include an embodiment in which another feature is formed between the first and second features, so that the first and second features can not be in direct contact.
[0058] It should be noted that the diagrams provided in the present embodiment only schematically illustrate the basic concept of the present application, and only show the components related to the present application in the diagrams, not drawn according to the number, shape and size of the components in actual implementation. The actual implementation of each component can be changed arbitrarily in shape, number and proportion, and the layout pattern of the components can also be more complex.
[0059] The utility model provides a kind of image sensor, including pixel array area and the protection ring area and peripheral circuit area being set to the peripheral of the pixel array area, such as, it can be the protection ring area and the peripheral circuit area being set to the peripheral of the protection ring area, pixel array is equipped in the pixel array area, the pixel array includes multiple pixel units arranged in array, each the pixel unit includes photosensitive doped region, such as the N type doped region of photodiode, further, isolation structure is equipped between adjacent photosensitive doped region, wherein, the image sensor further includes the doped adjustment region formed synchronously with the photosensitive doped region, further, both doped type is same, for example, the image sensor includes the N type doped adjustment region formed synchronously with the N type doped region, wherein, the N type doped adjustment region is set to the peripheral of the pixel array, such as, the N type doped adjustment region is set to the peripheral of the pixel array, the edge between the pixel array and the edge of the pixel array area has transition area, the doped adjustment region is set in the transition area and / or the protection ring area.
[0060] As an example, refer to Figure 1 , it is shown as the N type doped region 101 of the pixel array 100 and the N type doped adjustment region 200 being set to the peripheral of the pixel array 100 in the plane layout diagram in first embodiment, wherein, the N type doped adjustment region 200 includes the first N type doped adjustment ring 201 being set to the peripheral of the pixel array 100 and the second N type doped adjustment ring 202 being set to the peripheral of the first N type doped adjustment ring 201, wherein, the first N type doped adjustment ring 201 and the second N type doped adjustment ring 202 can be all set in the transition area, and one of them can be set in the transition area, and the other is set in the protection ring area. By the figure of additional two circles N type doped adjustment ring outside pixel array, the figure density near pixel array can be better increased, to improve the photoresist topography after exposure of pixel array edge region.
[0061] As an example, refer to Figure 2 , it is shown as the N type doped region 101 of the pixel array 100 and the N type doped adjustment region 200 being set to the peripheral of the pixel array 100 in the plane layout diagram in second embodiment, wherein further shows the isolation structure 300 being set between the N type doped region 101 of adjacent two photodiodes, the isolation structure 300, for example, can be P type isolation layer, can block photoelectron into adjacent pixel.
[0062] It is noted that the doping adjustment region formed synchronously with the light-doped region is used to improve the uniformity of the photoresist topography after exposure of the edge pixel region, however, in some embodiments, another doping adjustment region formed synchronously with the isolation structure 300 can also be configured to improve the uniformity of the photoresist topography before ion implantation.
[0063] It is noted that the present application improves the photoresist topography after exposure of the edge pixel region by increasing the pattern density near the pixel array, improves the process stability, and makes the photoelectric conversion performance of the edge pixels and the middle pixels in the pixel array substantially consistent. However, the additional N-type doping adjustment region 200 also generates a depletion region, and the generated photoelectrons can accumulate in the N-type doping adjustment region 200, causing electron blooming to the pixel region, and further causing overexposure of the edge pixels.
[0064] This electron blooming phenomenon is more likely to occur when the N-type doping adjustment region 200 is entirely located in the transition region, for example, in the embodiment shown in FIG. 1, the N-type doping adjustment region 200 is entirely located in the transition region M between the edge of the pixel array 100 and the edge of the pixel array region A. Figure 2 The embodiment shown in FIG. 2 shows a pixel array region A and a guard ring region B, the guard ring region B is provided with at least one P-type guard ring 401 and at least one N-type guard ring 402 arranged according to a predetermined rule, wherein the first N-type doping adjustment ring 201 and the second N-type doping adjustment ring 202 in the additionally added N-type doping adjustment region 200 are both arranged in the transition region M between the edge of the pixel array 100 and the edge of the pixel array region A, so that the first N-type doping adjustment ring 201 in the inner ring is inevitably close to the pixel array 100, at this time, only relying on the P-type isolation layer of the pixel cannot block the photoelectrons generated by the large N-type doping adjustment region 200, thereby causing the problem of overexposure of the edge pixels. Of course, in other implementation manners, the guard ring region B can also be other arrangement manners, and the guard ring region B is beneficial to prevent the influence of the peripheral circuit on the pixel array, for example, the guard ring region B can be provided with only at least one N-type guard ring 402.
[0065] In order to reduce the difference between the edge pixels and the middle pixels and avoid the influence of electron blooming, in some embodiments of the present application, a contact array (CA) is further arranged on the N-type doping adjustment region 200, the contact array includes a plurality of contact portions, the N-type doping adjustment region 200 is grounded through the contact array, so that the photoelectrons generated by the N-type doping adjustment region 200 can be released. For example, in the embodiment shown in FIG. 3, the contact array (CA) is arranged on the N-type doping adjustment region 200, and the N-type doping adjustment region 200 is grounded through the contact array (CA). Figure 2In the shown embodiment, the first N-type doped adjustment ring 201 and the second N-type doped adjustment ring 202 are both arranged with a plurality of contact portions 500 for grounding, which solves the instability of the process due to the pattern density through the N-type doped adjustment ring, and solves the problem of electron overflow of the N-type doped adjustment ring, and realizes the technical effects of stable pixel array process and no abnormal light emission at the edge of the pixel array. Of course, in other implementation manners, the contact array can be connected to other preset potentials to realize the derivation of the corresponding formed interference signal (blooming).
[0066] It should be noted that the arrangement of the contact array on the N-type doped adjustment region 200 can cause dark current at the edge of the pixel due to etching of the contact array, and therefore in some embodiments of the present application, the distribution of the first N-type doped adjustment ring 201 and the second N-type doped adjustment ring 202 is adjusted so that any N-type doped adjustment ring is as far away from the pixel region as possible, for example, please refer to Figure 3 , which shows the planar layout of the N-type doped region 101 of the pixel array 100 and the N-type doped adjustment region 200 arranged around the periphery of the pixel array 100 in the third embodiment, wherein the first N-type doped adjustment ring 201 is located in the transition region M and close to or next to the edge of the pixel array region A, the second N-type doped adjustment ring 202 is located in the guard ring region B and is located in the N-type guard ring 402 closest to the transition region M, of course, the second N-type doped adjustment ring 202 can also adopt the mode of multiplexing the N-type guard ring 402 closest to the transition region M, or the doping concentration of the N-type guard ring 402 can be adjusted to achieve.
[0067] As an example, in order to further reduce electron overflow, a notch can be arranged in the inner ring N-type doped adjustment ring (i.e. the first N-type doped adjustment ring 201), or at least one of the first N-type doped adjustment ring 201 is disconnected, so that the effective area of the first N-type doped adjustment ring 201 is reduced, thereby realizing the technical effect of further reducing electron overflow. For example, please refer to Figure 4 , which shows the planar layout of the N-type doped region 101 of the pixel array 100 and the N-type doped adjustment region 200 arranged around the periphery of the pixel array 100 in the fourth embodiment, wherein the first N-type doped adjustment ring 201 is disconnected and in a discontinuous state.
[0068] As an example, to further reduce the effect of electron overflow to the pixel array 100, a P-type doped guard region can be further provided in the transition region M to block the electron overflow from the N-type doped adjustment region 200, to avoid the electron overflow into the pixel array, on the basis of adjusting the distribution of the first N-type doped adjustment ring 201 and the second N-type doped adjustment ring 202 to make any one of the N-type doped adjustment rings as far away from the pixel region as possible. For example, please refer to Figure 5 , which shows the planar layout of the N-type doped region 101 of the pixel array 100 and the N-type doped adjustment region 200 surrounding the periphery of the pixel array 100 in the fifth embodiment, wherein the transition region M is further provided with a P-type doped guard region 600, which is located between the pixel array 100 and the first N-type doped adjustment ring 201 in the inner circle. Optionally, the P-type doped guard region 600 can have the same or similar depth as the isolation structure 300.
[0069] As an example, to make a compromise between the process and electron overflow, one N-type doped adjustment ring can be reduced, and the N-type doped adjustment region 200 is only provided in the guard ring region B. For example, please refer to Figure 6 , which shows the planar layout of the N-type doped region 101 of the pixel array 100 and the N-type doped adjustment region 200 surrounding the periphery of the pixel array 100 in the sixth embodiment, wherein the N-type doped adjustment region 200 is only provided in the guard ring region B, and the N-type doped adjustment region 200 is located in the N-type guard ring 402 closest to the transition region M.
[0070] It should be noted that, in the embodiment shown in Figure 6 , since the N-type doped adjustment region 200 is relatively far away from the pixel array 100 (located outside the pixel array region A), the contact array can be omitted or retained as needed.
[0071] As an example, please refer to Figure 7, which is a planar layout diagram of the N-type doped region 101 of the pixel array 100 and the N-type doped adjustment region 200 surrounding the periphery of the pixel array 100 in the seventh embodiment, wherein the N-type doped adjustment region 200 is only arranged in the guard ring region B, and the image sensor further comprises a dummy structure, which comprises a dummy pixel array 700 located in the transition region M and comprising a plurality of dummy pixel units 701 arranged in an array, each of the dummy pixel units comprising a dummy N-type doped region 701 of a dummy photodiode, and a dummy isolation structure 800 is arranged between adjacent two dummy N-type doped regions 701 of the dummy photodiodes, which can be a dummy P-type isolation layer for example. This scheme further utilizes the space of the transition region M to make the dummy isolation structure 800 on the basis of the embodiment shown in Figure 6 , which can increase the process margin.
[0072] Specifically, the image sensor further comprises an isolation structure arranged between adjacent light-sensitive doped regions, the dummy isolation structure is consistent with the structure of the isolation structure, and the dummy N-type doped region of the dummy photodiode is consistent with the structure of the light-sensitive doped region, that is, the dummy structure of the pixel array is prepared at the same time as the effective pixel region, and has the same size, which simplifies the process.
[0073] For example, refer to Figure 8 , which is a planar layout diagram of the N-type doped region 101 of the pixel array 100 and the N-type doped adjustment region 200 surrounding the periphery of the pixel array 100 in the eighth embodiment, which further extends the dummy isolation structure 800 to the interface between the guard ring region B and the P-type guard ring 401 closest to the P-type guard ring 401 on the basis of the embodiment shown in Figure 7 , which can achieve better isolation effect by connecting the dummy isolation structure 800 to the large P-type guard ring 401.
[0074] Here, a manufacturing method of the image sensor of the utility model is provided, refer to Figure 9 , which is a process flow diagram of the method, comprising the following steps:
[0075] S1: forming a photoresist layer on a semiconductor substrate;
[0076] S2: patterning the photoresist layer based on the same mask to obtain the pattern of the light-sensitive doped region and the pattern of the doped adjustment region;
[0077] S3: performing ion implantation with the patterned photoresist layer as a mask to obtain the light-sensitive doped region and the doped adjustment region in the substrate.
[0078] Due to the addition of the pattern of the doping adjustment region, the photoresist topography after exposure of the edge pixel region is improved, the process stability is improved, and the photoelectric conversion performance of the edge pixels and the middle pixels in the pixel array obtained after ion implantation is basically consistent.
[0079] As an example, when the image sensor further comprises an isolation structure arranged between adjacent light-doped regions, and when the image sensor comprises at least one of a P-type doped protection region, at least one P-type protection ring and a virtual isolation structure, the corresponding at least one of the P-type doped protection region, at least one P-type protection ring and virtual isolation structure and the isolation structure arranged between adjacent light-doped regions are prepared based on the same process.
[0080] As an example, the light-doped region comprises an N-type doped region of a photodiode, and the doping adjustment region comprises an N-type doping adjustment region.
[0081] The utility model further provides a kind of electronic equipment, including the image sensor as any one of the above scheme is described. Electronic equipment can be security monitoring, vehicle-mounted electronics, mobile phone camera, machine vision etc. equipment, based on the image sensor of the utility model can obtain high-quality image information, can be used for infrared utilization equipment.
[0082] In conclusion, the image sensor of the utility model includes pixel array region, protection ring region and peripheral circuit region arranged from inside to outside, pixel array region is equipped with pixel array, pixel array includes multiple pixel units arranged in array, each pixel unit includes light-doped region, wherein, the image sensor further includes doping adjustment region formed synchronously with light-doped region, doping adjustment region is arranged in the periphery of pixel array, transition region is between the edge of pixel array and the edge of pixel array region, doping adjustment region is arranged in transition region and / or protection ring region. The utility model adds doping adjustment region, improves the pattern density near pixel array, so that in the manufacturing process of image sensor, photoresist pattern topography for limiting ion implantation region of light-doped region can be more uniform, so as to reduce ion implantation process instability caused by pattern density, finally make that pixel unit located in middle region of pixel array and pixel unit located in edge region of pixel array have more consistent photoelectric conversion performance. Therefore, the utility model effectively overcomes various shortcomings in prior art and has high industrial utilization value.
[0083] The above embodiments only exemplarily illustrate the principles and effects of the present application, and are not used to limit the present application. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes completed by those skilled in the art without departing from the spirit and technical thought disclosed by the present application should be covered by the claims of the present application.
Claims
1. An image sensor, comprising a pixel array region, a protective ring region, and a peripheral circuit region disposed around the pixel array region, wherein the pixel array region is provided with a pixel array, the pixel array comprising a plurality of pixel units arranged in an array, each pixel unit comprising a photosensitive doped region, characterized in that, The image sensor also includes: A doping adjustment region, formed synchronously with the photosensitive doped region, is disposed on the periphery of the pixel array; Wherein, there is a transition region between the edge of the pixel array and the edge of the pixel array region, and the doping adjustment region is disposed in the transition region and / or the guard ring region.
2. The image sensor according to claim 1, characterized in that: The photosensitive doped region includes an N-type doped region of a photodiode, and the doping adjustment region includes an N-type doped adjustment region; and / or, the guard ring region surrounds the periphery of the pixel array region, and the peripheral circuit region surrounds the periphery of the guard ring region.
3. The image sensor according to claim 1 or 2, characterized in that: The doping adjustment region is provided with a contact array, and the doping adjustment region is connected to a preset potential through the contact array.
4. The image sensor according to claim 2, characterized in that: The N-type doping adjustment region includes a first N-type doping adjustment ring surrounding the pixel array and a second N-type doping adjustment ring surrounding the first N-type doping adjustment ring.
5. The image sensor according to claim 4, characterized in that: Both the first N-type doping adjustment ring and the second N-type doping adjustment ring are located in the transition region.
6. The image sensor according to claim 4, characterized in that: The protection ring region is provided with at least one N-type protection ring. The first N-type doping adjustment ring is located in the transition region and is close to or adjacent to the edge of the pixel array region. The second N-type doping adjustment ring is located in the protection ring region and is located in the N-type protection ring closest to the transition region. Alternatively, the protection ring region is also provided with at least one P-type protection ring.
7. The image sensor according to claim 6, characterized in that: The first N-type doped adjustment ring has a notch, or at least one part of the first N-type doped adjustment ring is broken.
8. The image sensor according to claim 4, characterized in that: The image sensor also includes a P-type doped protection zone, which is located in the transition region and between the pixel array and the first N-type doped adjustment ring.
9. The image sensor according to claim 2, characterized in that: The N-type doping adjustment region is disposed in the guard ring region, and the guard ring region is provided with at least one N-type guard ring. The N-type doping adjustment region is located in the N-type guard ring closest to the transition region.
10. The image sensor according to claim 4 or 9, characterized in that: The image sensor further includes a virtual pixel array, which is located in the transition region and includes multiple virtual pixel units arranged in an array. Each virtual pixel unit includes a virtual N-type doped region of a virtual photodiode, and a virtual isolation structure is provided between the virtual N-type doped regions of two adjacent virtual photodiodes.
11. The image sensor according to claim 10, characterized in that: The protection ring area is further provided with at least one P-type protection ring, and the virtual isolation structure extends to the protection ring area and connects with the nearest P-type protection ring.
12. The image sensor according to claim 10, characterized in that: The image sensor also includes an isolation structure disposed between adjacent photosensitive doped regions, the virtual isolation structure having the same structure as the isolation structure, and the virtual N-type doped region of the virtual photodiode having the same structure as the photosensitive doped region.
13. An electronic device, characterized in that, Including the image sensor as described in any one of claims 1 to 12.