Chemical vapor deposition equipment suitable for plate-shaped workpiece

Abstract

The utility model is suitable for the technical field of chemical vapor deposition, and provides chemical vapor deposition equipment suitable for plate-shaped workpieces. The chemical vapor deposition equipment suitable for the plate-shaped workpiece comprises a deposition chamber; the rotary material platform is arranged in the deposition chamber and is used for placing a plate-shaped workpiece, so that airflow channels are respectively formed in the inner sides of the two surfaces of the plate-shaped workpiece; the air inlet pipe penetrates through the deposition chamber, is arranged on the side edge of the plate-shaped workpiece and is used for feeding air into the airflow channel from the side edge; an exhaust hole is formed in one end of the exhaust pipe, and the other end of the exhaust pipe extends out of the deposition chamber; the exhaust hole is located at the exhaust end of the airflow channel and located on the same plane with the plate-shaped workpiece. According to the utility model, the compactness of the coating formed by the out-phase surface reaction of the airflow along the surface of the workpiece and the bonding property of the substrate are improved, and the problem of low product yield of the coating on the surface of the substrate of the plate-shaped workpiece is further solved.

Description

TECHNICAL FIELD

[0001] The utility model belongs to chemical gas phase deposition technical field especially relates to a kind of chemical gas phase deposition equipment suitable for plate-shaped workpiece. BACKGROUND

[0002] Plate-shaped workpiece surface chemical gas deposition process is widely used in aerospace and semiconductor field, such as the oxidation-resistant coating (PyC / SiC ceramic coating) of the surface of aeroengine hot end component and the surface coating (SiC / TaC coating) of wafer carrier plate in third-generation semiconductor SiC substrate epitaxy process, there is also the surface coating (SiC / TaC coating) of electrostatic chuck used in etching, PVD, CVD and other core process links in integrated circuit manufacturing process.

[0003] Plate-shaped workpiece usually includes round plate, square plate, special-shaped plate and the like structure, shape features are as follows: one, length-width (or diameter) is much greater than thickness size;Two, horizontal direction face is closed structure.Usually precursor gas is poor in diffusivity due to relatively large molecular weight, and uneven gas flow field can lead to uneven coating thickness, affecting the quality of coating. Therefore, the above objective reasons lead to low yield of plate-shaped workpiece substrate surface coating product. SUMMARY

[0004] The utility model embodiment aims at providing a kind of chemical gas phase deposition equipment suitable for plate-shaped workpiece, to solve the problem of low yield of plate-shaped workpiece substrate surface coating product.

[0005] The utility model embodiment is realized as follows, a kind of chemical gas phase deposition equipment suitable for plate-shaped workpiece, the chemical gas phase deposition equipment suitable for plate-shaped workpiece includes:

[0006] Deposition chamber;

[0007] Rotary table, be set up in the inside of the deposition chamber, for placing plate-shaped workpiece, so that plate-shaped workpiece two surface inner side each forms gas flow passage;

[0008] Gas inlet pipe, pass through the deposition chamber, be set in the side of plate-shaped workpiece, for from side to the gas flow passage gas inlet;

[0009] Exhaust pipe, one end is provided with exhaust hole, the other end passes out the deposition chamber;The exhaust hole is located at the exhaust end of the gas flow passage and is in the same plane with plate-shaped workpiece.

[0010] Further, the gas inlet direction of two surfaces is not parallel, and the intersection point formed by the translation of two skew straight lines in the same plane falls on the rotation axis of the rotary table, and the exhaust direction of the exhaust hole bisects the angle formed by two skew straight lines.

[0011] Further, the rotating material table is provided with a load tool capable of placing at least two plate-shaped workpieces in parallel, and adjacent two plate-shaped workpieces form the airflow channel, a plurality of air inlet pipes are arranged on the side edges of the plate-shaped workpieces, and each column of the air inlet pipes alternately introduces air into the airflow channel; the air outlet pipe is provided with air outlet holes in the same number as the plate-shaped workpieces, and the air outlet holes correspond to the plate-shaped workpieces one by one and are all in the same plane.

[0012] Further, the air inlet direction of each column of the air inlet pipes is in the same plane, all planes intersect on the rotating axis of the rotating material table, and are symmetrical with respect to the plane in which the air outlet direction of the air outlet pipe is located.

[0013] Further, the air outlet pipe is a square long pipe, and the shape of the air outlet hole is square.

[0014] Further, the chemical vapor deposition equipment suitable for plate-shaped workpieces further comprises:

[0015] A heating module is arranged on the outer periphery of the deposition chamber.

[0016] A heat preservation layer wraps the heating module and the deposition chamber;

[0017] A furnace shell wraps the heat preservation layer;

[0018] The air inlet pipe and the air outlet pipe sequentially pass through the heating module, the heat preservation layer and the furnace shell.

[0019] The chemical vapor deposition equipment suitable for plate-shaped workpieces provided by the embodiment of the utility model, the rotating material table makes uniform rotation movement with the plate-shaped workpieces, so that each surface of the plate-shaped workpieces realizes uniform deposition; the airflow is introduced into the inner sides of the two surfaces of the plate-shaped workpieces, and flows to the direction of the air outlet hole, converges and folds the air inlet of the two surfaces of the plate-shaped workpieces, improves the compactness and matrix combination of the coating formed by the out-of-phase surface reaction of the airflow along the surface of the workpiece, and further solves the problem of low product yield of the coating on the surface of the plate-shaped workpiece matrix. BRIEF DESCRIPTION OF DRAWINGS

[0020] Figure 1 It is a chemical vapor deposition process flow chart suitable for plate-shaped workpieces in the first embodiment;

[0021] Figure 2 It is a chemical vapor deposition process airflow direction schematic diagram in the first embodiment;

[0022] Figure 3 It is a transverse sectional view of the chemical vapor deposition equipment suitable for plate-shaped workpieces in the embodiment of the utility model;

[0023] Figure 4A flow chart of a chemical vapor deposition process suitable for a plate-shaped workpiece in the second embodiment;

[0024] Figure 5 A schematic diagram of a flow direction of a chemical vapor deposition process for a multi-layer plate-shaped workpiece in the second embodiment;

[0025] Figure 6 A structural diagram of an exhaust pipe in the third embodiment;

[0026] Figure 7 A structural diagram of a chemical vapor deposition device suitable for a plate-shaped workpiece in the third embodiment;

[0027] 100, deposition chamber; 200, rotating table; 210, workpiece carrier; 300, gas inlet pipe; 400, exhaust pipe; 410, exhaust hole; 500, plate-shaped workpiece; 600, heating module; 700, insulation layer; 800, furnace shell. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical scheme and advantages of the utility model more clear, the utility model is further described in detail below in combination with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the utility model and do not limit the utility model.

[0029] In the first embodiment, as shown in Figure 1 and 2 , a chemical vapor deposition process suitable for a plate-shaped workpiece is proposed, which comprises steps S102-S106:

[0030] S102, place the plate-shaped workpiece 500 on the rotating table 200.

[0031] In the present embodiment, the rotating table 200 is provided with a workpiece carrier 210, which can fix and place the plate-shaped workpiece 500. The present embodiment does not limit the number of plate-shaped workpieces, which can be one or several. If it is several, the second embodiment will be described in detail. The plate-shaped workpiece can be placed horizontally, obliquely or vertically, as long as it can form a gas flow channel on both sides of the plate-shaped workpiece and guide the gas flow to converge on both surfaces to realize the technical scheme of the present embodiment, and the inclination of the plate-shaped workpiece is not limited. The present embodiment takes a horizontally placed plate-shaped workpiece as an example. Correspondingly, the rotating axis of the rotating table 200 is located at the center of the plate-shaped workpiece 500 and is perpendicular to the plate-shaped workpiece 500. The rotating table 200 rotates at a uniform speed with the plate-shaped workpiece 500, so that each surface of the plate-shaped workpiece 500 is uniformly deposited.

[0032] Step S104, forming gas flow channels on the inner sides of the two surfaces of the plate-shaped workpiece 500, and feeding gas into the gas flow channels from the side.

[0033] In the embodiment, as shown in the figure, the "gas flow channel" refers to the flow path of the reaction gas on the surface of the plate-shaped workpiece, which is close to the two surfaces of the plate-shaped workpiece; this means that the "gas flow channel" is not necessarily a four-around closed space, but as long as it can guide the reaction gas close to the surface of the plate-shaped workpiece and converge, it can constitute the "gas flow channel". Figure 2

[0034] Step S106, providing an exhaust hole 410 at the exhaust end of the gas flow channel, satisfying that the exhaust hole 410 is on the same plane as the plate-shaped workpiece 500, so that the gas flow parallel to the gas flow channel converges to the two surfaces.

[0035] In the embodiment, the chemical vapor deposition is carried out in a vacuum environment with a temperature of 1000℃ and a gas pressure of 1000-10000Pa. The chemical vapor deposition process has high requirements not only on the uniformity of the temperature and pressure of the working area, but also on the uniformity of the gas flow field, the workpiece loading method and the inlet and outlet structure. Generally, the precursor gas has poor diffusivity due to its relatively large molecular weight, and the non-uniformity of the gas flow field will lead to non-uniformity of the coating thickness, thereby affecting the quality of the coating. In addition, the inlet and outlet structure of the equipment will directly affect the path and flow rate of the gas flow. Generally, the gas flow flows along the surface of the workpiece, and in the case of smooth exhaust, it is more likely to occur on the surface of the coating. The coating formed by the heterogeneous surface reaction has good density and substrate adhesion. Therefore, in the embodiment, the gas flow is introduced into the inner sides of the two surfaces of the plate-shaped workpiece 500, and the gas flow flows in the direction of the exhaust hole 410, so as to converge the gas inlet on the two surfaces of the plate-shaped workpiece 500, thereby improving the density and substrate adhesion of the coating formed by the heterogeneous surface reaction along the surface of the workpiece, and solving the problem of low product yield of the coating on the surface of the plate-shaped workpiece substrate.

[0036] In the first embodiment, the gas flow direction of the gas inlet pipe 300 is further optimized. The gas inlet directions of the two surfaces are not parallel, and the two directions form a straight line on different planes. The intersection point formed by the translation of the two straight lines on different planes falls on the rotation axis of the rotating table 200, and the exhaust direction of the exhaust hole 410 bisects the angle formed by the two straight lines on different planes.

[0037] In the optimization scheme, as shown in the figure, Figure 2 and Figure 3 the gas inlet pipe 300 is divided into two columns A and B. The gas inlet pipe A feeds gas into the lower surface of the plate-shaped workpiece 500, and the gas inlet pipe B feeds gas into the upper surface of the plate-shaped workpiece 500. The gas inlet pipes 300 on the two surfaces are not arranged on the same vertical plane, and the staggered positions can ensure that the gas flows on the upper and lower surfaces of the plate-shaped workpiece 500 are equal. ​

[0038] In a second embodiment, as shown in Figure 4 and 5 a chemical vapor deposition process for plate-shaped workpieces is given. This embodiment is improved on the basis of the first embodiment and can be applied to simultaneous processing of multiple plate-shaped workpieces. The chemical vapor deposition process for plate-shaped workpieces includes steps S202-S206:

[0039] Step S202, at least two plate-shaped workpieces 500 are arranged in parallel and at intervals on the rotating table 200.

[0040] Step S204, the adjacent two plate-shaped workpieces 500 form the airflow channel, and a plurality of gas inlet pipes 300 are arranged at the side edges of the plate-shaped workpieces 500, so that each column of the gas inlet pipes 300 alternately introduces gas into the airflow channel.

[0041] Step S202, an exhaust pipe 400 is arranged at the exhaust end of the airflow channel, and the exhaust pipe 400 is provided with the same number of exhaust holes 410 as the plate-shaped workpieces 500, and the exhaust holes 410 correspond one-to-one to the plate-shaped workpieces 500 and are all on the same plane.

[0042] Currently, the equipment for chemical vapor deposition on plate-shaped parts usually adopts the traditional structure of bottom gas inlet and top gas exhaust, considering the natural upward rising force of gas at high temperature due to density change. Taking the wafer carrier disc in the semiconductor industry as an example, the outer diameter size is large (φ700mm or so), in order to ensure the deposition quality of the upper and lower surfaces, usually one piece is loaded in one furnace, and two furnace depositions are required, and each furnace deposition is for one "windward" surface. The above-mentioned loading process leads to low production efficiency and high cost, and during the secondary loading, the workpiece is easily contaminated, reducing the cleanliness (purity) of the product, especially in the semiconductor application industry, which has a huge impact. In addition, the superposition effect of the two deposition processes will directly affect the uniformity of the coating thickness and the quality of the coating crystal.

[0043] In this embodiment, as shown in Figure 5 at least two plate-shaped workpieces 500 are loaded, and the amount of loading depends on the working zone height of the equipment and the number of gas inlets arranged in the vertical direction. As shown in Figure 3 and 5As shown, the intake pipes 300 are arranged in two columns, A and B. The intake pipes in column A include A1-A5, and the intake pipes in column B include B1-B5. The two columns of intake pipes are arranged alternately. The number of columns and the number of intake pipes in each column are not limited to two and five, respectively, and can be determined according to actual production conditions. The intake pipes 300 arranged in two columns (or more columns) on the side of the plate-shaped workpiece 500. Each column of intake pipes 300 alternately supplies gas to the gas flow channels. Compared with the single-column arrangement, the production efficiency of the plate-shaped workpiece chemical vapor deposition process can be doubled. In addition, the side exhaust pipe 400 is vertically arranged on the other side. The exhaust holes 410 are arranged on the exhaust pipe 400 and flush with the position of each workpiece. The intake of the upper and lower surfaces of the workpiece is converged and folded, which improves the formation of dense and well-bonded coatings on the workpiece surface.

[0044] In the second embodiment, the arrangement of the multiple columns of intake pipes 300 is further optimized. The intake direction of each column of intake pipes 300 is in the same plane, and all planes intersect at the rotation axis of the rotating table 200, and are symmetric with respect to the plane in which the exhaust direction of the exhaust pipe 400 is located.

[0045] In the optimization scheme, as shown in Figure 3 The intersection of the intake direction falls on the rotation axis of the rotating table 200, which can make the gas flow more uniform.

[0046] In the second embodiment, the intake and exhaust are further optimized. According to the trend that the bottom opening is larger than the top opening, the spacing of the workpieces and the size of the opening of the exhaust pipe 400 are adjusted appropriately based on the simulation results to ensure the best gas flow field effect.

[0047] In the third embodiment, as shown in Figure 2 and 3 A chemical vapor deposition device suitable for plate-shaped workpieces is proposed. The device of this embodiment can perform the chemical vapor deposition process for plate-shaped workpieces described in the first and second embodiments. The chemical vapor deposition device suitable for plate-shaped workpieces includes:

[0048] A deposition chamber 100;

[0049] A rotating table 200 arranged inside the deposition chamber 100 for placing plate-shaped workpieces 500, so that each of the two surfaces of the plate-shaped workpieces 500 forms a gas flow channel;

[0050] Intake pipes 300 passing through the deposition chamber 100 and arranged on the side of the plate-shaped workpiece 500 for supplying gas to the gas flow channel from the side;

[0051] The exhaust pipe 400 is provided with an exhaust hole 410 at one end and is connected to the deposition chamber 100 at the other end. The exhaust hole 410 is located at the exhaust end of the airflow channel and is in the same plane as the plate-shaped workpiece 500.

[0052] In the present embodiment, the deposition chamber 100 provides a high-temperature vacuum environment for chemical vapor deposition. The rotating table 200 is provided with a loading tool 210 for carrying the plate-shaped workpiece 500. The airflow is introduced into the inner side of both surfaces of the plate-shaped workpiece 500, and flows in the direction of the exhaust hole 410. The airflow converges and converges the gas inlet of both surfaces of the plate-shaped workpiece 500, improves the density and matrix combination of the coating formed by the out-of-phase surface reaction of the airflow along the surface of the workpiece, and further solves the problem of low yield of the plate-shaped workpiece surface coating product.

[0053] In the third embodiment, as shown in Figure 3 , the structure of the gas inlet pipe 300 is further optimized. The gas inlet directions of the two surfaces are not parallel, and the two direction lines form a ruled surface straight line. The intersection of the two ruled surface straight lines formed by translation in the same plane falls on the rotation axis of the rotating table 200, and the exhaust direction of the exhaust hole 410 bisects the angle formed by the two ruled surface straight lines.

[0054] In the third embodiment, as shown in Figure 3 and 5 , the structure of the loading tool 210, the gas inlet pipe 300 and the exhaust pipe 400 is further optimized. The rotating table 200 is provided with a loading tool 210 that can parallelly place at least two plate-shaped workpieces 500. Adjacent two plate-shaped workpieces 500 form the airflow channel. A plurality of gas inlet pipes 300 are arranged on the side edges of the plate-shaped workpieces 500, so that each column of the gas inlet pipes 300 alternately introduces gas into the airflow channel. The exhaust pipe 400 is provided with the same number of exhaust holes 410 as the plate-shaped workpieces 500. The exhaust holes 410 correspond one-to-one to the plate-shaped workpieces 500 and are all in the same plane. The gas inlet direction of each column of the gas inlet pipes 300 is in the same plane, and all planes intersect at the rotation axis of the rotating table 200, and are symmetrical with respect to the plane in which the exhaust direction of the exhaust pipe 400 is located. As shown in Figure 6 , the exhaust pipe 400 is a square long pipe, and the shape of the exhaust hole 410 is square.

[0055] In the present optimization scheme, a plurality of gas inlet pipes 300 and a plurality of exhaust holes 410 are provided, which are suitable for a plurality of plate-shaped workpieces 500, improve the loading capacity, and can realize full-surface deposition of the workpiece in a single furnace, greatly improving the production efficiency. In addition, by improving the gas inlet and exhaust structure of the equipment and assisted by simulation technology, the uniformity of the airflow field is improved, the path and flow rate of the airflow are improved, and the product yield is greatly improved.

[0056] In the third embodiment, as shown inFigure 3 and 7 As shown in the figure, the chemical vapor deposition equipment for plate-shaped workpieces is further optimized. The chemical vapor deposition equipment for plate-shaped workpieces further comprises:

[0057] A heating module 600 is arranged at the outer periphery of the deposition chamber 100.

[0058] A heat preservation layer 700 is arranged to wrap the heating module 600 and the deposition chamber 100.

[0059] A furnace shell 800 is arranged to wrap the heat preservation layer 700.

[0060] The gas inlet pipe 300 and the gas outlet pipe 400 sequentially pass through the heating module 600, the heat preservation layer 700 and the furnace shell 800.

[0061] In the optimization scheme, the heating module 600 provides heat for the deposition chamber 100, the heat preservation layer 700 reduces heat loss, and the furnace shell 800 plays a protective role.

[0062] The working principle of the third embodiment is that the plate-shaped workpieces 500 are installed at equal intervals and in parallel on the material loading tooling 210, the multiple rows of gas inlet pipes 300 introduce gas from the side, the gas flows along the surface of the plate-shaped workpieces 500, under the guidance of the exhaust holes 410, the gas converges to the two surfaces of the plate-shaped workpieces 500, and finally flows to the outside along the gas outlet pipe 400.

[0063] The technical features of the above-mentioned embodiments can be combined in any manner. In order to make the description simple, all possible combinations of the technical features in the above-mentioned embodiments are not described, however, as long as the combination of the technical features does not exist contradictory, it should be considered as the scope of the present application.

[0064] The above-mentioned embodiments only express several implementation manners of the present application, the description is more specific and detailed, but it should not be understood as the limitation of the patent scope of the present application. It should be pointed out that for ordinary skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which all belong to the protection scope of the present application. Therefore, the protection scope of the present application patent should be subject to the appended claims.

Claims

1. A chemical vapor deposition apparatus suitable for plate-shaped workpieces, characterized in that, The chemical vapor deposition equipment suitable for plate-shaped workpieces includes: Sedimentation chamber; A rotating material stage is located inside the deposition chamber and is used to place plate-shaped workpieces, so that airflow channels are formed on the inner sides of both surfaces of the plate-shaped workpieces. An air inlet pipe, passing through the deposition chamber, is disposed on the side of the plate-shaped workpiece for introducing air from the side into the airflow channel; The exhaust pipe has an exhaust hole at one end and the other end leads out of the deposition chamber; the exhaust hole is located at the exhaust end of the airflow channel and is on the same plane as the plate-shaped workpiece.

2. The chemical vapor deposition apparatus for plate-shaped workpieces according to claim 1, characterized in that, The air intake directions of the two surfaces are not parallel, and the two directional lines form skew lines. The intersection point formed by the translation of the two skew lines onto the same plane falls on the rotation axis of the rotating material table, and the exhaust direction of the exhaust hole bisects the angle formed by the two skew lines.

3. The chemical vapor deposition apparatus for plate-shaped workpieces according to claim 1, characterized in that, The rotating platform is equipped with a loading fixture that can place at least two plate-shaped workpieces in parallel. Two adjacent plate-shaped workpieces form the airflow channel. Multiple rows of air inlet pipes are arranged on the side of the plate-shaped workpieces, so that each row of air inlet pipes alternately introduces air into the airflow channel. The exhaust pipe is provided with the same number of exhaust holes as the plate-shaped workpieces. The exhaust holes correspond one-to-one with the plate-shaped workpieces and are all on the same plane.

4. The chemical vapor deposition apparatus for plate-shaped workpieces according to claim 3, characterized in that, The air intake direction of each column of air intake pipes is in the same plane, all planes intersect on the rotation axis of the rotating material table, and are symmetrical with respect to the plane where the exhaust direction of the exhaust pipe is located.

5. The chemical vapor deposition apparatus for plate-shaped workpieces according to claim 1, characterized in that, The exhaust pipe is a rectangular long pipe, and the exhaust port is square in shape.

6. The chemical vapor deposition apparatus for plate-shaped workpieces according to any one of claims 1-5, characterized in that, The chemical vapor deposition equipment suitable for plate-shaped workpieces also includes: A heating module is disposed on the outer periphery of the deposition chamber; An insulation layer encloses the heating module and the deposition chamber. The furnace shell encloses the insulation layer. The air inlet pipe and the exhaust pipe pass through the heating module, the insulation layer and the furnace shell in sequence.

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