SiC crystal growth seed crystal mechanical installation device
By mechanically connecting the graphite crucible, the graphite lower cover, the graphite upper cover, and the thermally conductive insulation layer, the problems of uneven heat distribution and impurity contamination in SiC crystal growth are solved, achieving higher quality crystal growth and a convenient installation process.
Patent Information
- Application Number
- CN202423244540.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-27
- Publication Date
- 2025-11-25
- Estimated Expiration
- 2034-12-27
AI Technical Summary
In existing SiC crystal growth devices, uneven heat distribution and heat dissipation in the seed crystal, as well as contamination from impurities in the binder and graphite plate, affect crystal quality.
The mechanical connection method using a graphite crucible, a graphite lower cover, a graphite upper cover, and a thermally conductive layer avoids bonding and fixing. The thermally conductive layer isolates graphite impurities, evenly distributes the seed crystal temperature, and conducts heat away.
This improved the quality of SiC crystal growth, avoided uneven heat distribution and impurity contamination, and enhanced the efficiency of device disassembly and installation.
Smart Images
Figure CN223592883U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the technical field of semiconductor material crystal growth, especially to a SiC crystal growth seed crystal mechanical installation device. BACKGROUND
[0002] Silicon carbide (SiC) is the third generation of wide band gap semiconductor materials after silicon, germanium, gallium arsenide, etc. It has obvious advantages in band gap width, thermal conductivity, critical breakdown field strength, and saturated electron drift rate. As a representative material of wide band gap semiconductor, the semiconductor device prepared by silicon carbide (SiC) has a small leakage current and a large breakdown field, which is an ideal material for high-power devices, and the saturated electron mobility is 2-3 times higher than Si, which is also an optimal material for high-frequency device preparation.
[0003] At present, the industry generally uses PVT method to prepare SiC single crystal. After heating and sublimation of SiC raw materials, the sublimation material rises and condenses on the surface of the SiC seed crystal above to obtain SiC crystal. However, in the specific preparation process, the seed crystal is currently bonded to a graphite plate using an adhesive for crystal growth. However, this method can cause uneven heat distribution of the seed crystal, uneven heat dissipation, and contamination of the crystal by impurities from the adhesive and graphite plate, affecting the quality of the crystal.
[0004] Therefore, the utility model provides a novel SiC crystal growth seed crystal mechanical installation device to solve the above problems in the prior art. UTILITY MODEL CONTENTS
[0005] Therefore, the main purpose of the utility model is to provide a SiC crystal growth seed crystal mechanical installation device to solve the problems of uneven heat distribution of the seed crystal, uneven heat dissipation, contamination of the crystal by impurities from the adhesive and graphite plate, and affecting the quality of the crystal in the traditional SiC crystal growth device.
[0006] To achieve the above purpose, the technical scheme of the utility model is as follows:
[0007] A SiC crystal growth seed crystal mechanical installation device, comprising:
[0008] A graphite crucible;
[0009] A graphite lower cover is arranged at the upper end opening of the graphite crucible, and a graphite tray is arranged in the graphite lower cover;
[0010] A SiC seed crystal is arranged in the graphite lower cover through the graphite tray, and a heat-conducting partition is arranged above the SiC seed crystal;
[0011] A graphite upper cover is arranged at the upper end of the graphite lower cover and matches the heat-conducting partition.
[0012] In a preferred embodiment, the graphite lower cover is mechanically connected with the graphite crucible, and a placing table is arranged in the graphite lower cover, which is matched with the graphite tray.
[0013] In a preferred embodiment, a pressing table is arranged at the lower end of the graphite cover, which is mechanically connected with the graphite lower cover.
[0014] In a preferred embodiment, the lower end surface of the pressing table is a plane, which is matched with the heat-conducting spacer.
[0015] In a preferred embodiment, the diameter of the heat-conducting spacer is greater than the diameter of the SiC seed crystal, and the diameter of the heat-conducting spacer is the same as the diameter of the pressing table.
[0016] In a preferred embodiment, the graphite tray is detachably arranged in the graphite lower cover, and a clamping table matched with the SiC seed crystal is arranged in the graphite tray.
[0017] In a preferred embodiment, the diameter of the SiC seed crystal is the same as the diameter of the clamping table, and the thickness of the SiC seed crystal is greater than the setting depth of the clamping table.
[0018] In a preferred embodiment, the heat-conducting spacer is a SiC heat-conducting material which does not pollute SiC.
[0019] In a preferred embodiment, the installation position of the SiC seed crystal is at a certain height from the SiC powder in the graphite crucible.
[0020] In a preferred embodiment, the SiC powder is located in the high-temperature zone in the graphite crucible, and the SiC seed crystal is located in the low-temperature zone in the graphite crucible.
[0021] Compared with the prior art, the SiC crystal growth seed crystal mechanical installation device has the following beneficial effects:
[0022] 1. The graphite crucible, the graphite lower cover and the graphite upper cover are mechanically connected, so that each part is convenient to disassemble and install during use, and the use efficiency is improved.
[0023] 2. The SiC seed crystal is placed by a mechanical method, without using a conventional bonding method, so as to avoid the problems that the seed crystal is bonded on the graphite plate, the heat distribution of the seed crystal is uneven, the heat dissipation is uneven, the impurities of the bonding agent and the graphite plate pollute the crystal, and the quality of the crystal is affected.
[0024] 3. The heat-conducting spacer is arranged, which can isolate the graphite cover graphite impurities, uniformly distribute the temperature of the SiC seed crystal, and lead out the heat generated during the crystal growth, so as to ensure the quality of the crystal preparation. BRIEF DESCRIPTION OF DRAWINGS
[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description only constitute some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor.
[0026] Figure 1 It is a structural schematic view of the SiC crystal growth seed crystal mechanical installation device of the present application.
[0027] Figure 2 It is a sectional view of the SiC crystal growth seed crystal mechanical installation device of the present application.
[0028] Figure 3 It is a structural schematic view of the graphite upper cover of the present application.
[0029] Figure 4 It is a structural schematic view of the graphite lower cover of the present application.
[0030] Figure 5 It is a structural schematic view of the graphite crucible of the present application.
[0031] Figure 6 It is a structural schematic view of the graphite tray of the present application.
[0032] Figure 7 It is a structural schematic view of the SiC seed crystal of the present application.
[0033] Figure 8 It is a structural schematic view of the heat-conducting interlayer of the present application.
[0034]
Main component symbol explanation
[0035] 1, SiC powder; 2, graphite crucible; 3, graphite lower cover; 31, placing table; 4, graphite tray; 41, clamping table; 5, SiC seed crystal; 6, heat-conducting interlayer; 7, graphite upper cover; 71, pressing table. DETAILED DESCRIPTION
[0036] The structure of the SiC crystal growth seed crystal mechanical installation device of the present application will be further described in detail below in combination with the drawings and the embodiments of the present application.
[0037] It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict. The present application will be described in detail below with reference to the drawings and in combination with the embodiments.
[0038] It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising," when used in this specification, specify the presence of stated features, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and / or groups thereof.
[0039] It is to be understood that the terms "first", "second", and the like, used in the description and the claims of this application, as well as above-described drawings, are used to differentiate similar objects, and are not necessarily used to describe a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in other sequences than described or illustrated herein. Furthermore, the terms "comprise", "comprising", "include", "including", and their conjugates, as used herein, are intended to be open-ended and do not exclude additional elements or steps.
[0040] For the purposes of the description hereinafter, the terms "upper", "lower", "right", "left", "rear", "front", "vertical" and "horizontal" as can be used herein, are made only with reference to the orientation of the exemplary embodiments of the application as shown in the drawings, and are in no way intended to limit the scope of the application. Relative terms, such as "above", "below", "top", "bottom", "side", and the like can be used herein for ease of description to describe one element's or feature's spatial relationship to another element(s) or feature(s) as illustrated in the figures. It is to be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device described herein is inverted, elements described as "above" other elements or features would then be oriented "below" the other elements or features. Thus, the exemplary term "above" can encompass both an orientation of above and below. The device can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. It is to be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device described herein is inverted, elements described as "above" other elements or features would then be oriented "below" the other elements or features. Thus, the exemplary term "above" can encompass both an orientation of above and below. The device can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
[0041] As shown in the accompanying drawings for Figures 1-8 The utility model provides a technical scheme:
[0042] A SiC crystal growth seed crystal mechanical installation device, including graphite crucible 2, graphite lower cover 3, SiC seed crystal 5, heat conducting interlayer 6 and graphite upper cover 7, wherein:
[0043] The graphite crucible 2 is a coverless and heatable crucible structure, the SiC powder 1 is placed in the inner cavity of the graphite crucible 2, the whole graphite crucible is placed in the graphite heating body, the temperature of the external graphite felt is adjusted, the SiC powder 1 is placed in the high temperature zone, and the SiC seed crystal 5 is correspondingly placed in the low temperature zone;
[0044] The graphite lower cover 3 is mechanically installed at the upper end opening of the graphite crucible 2, and a placing table 31 is arranged in the graphite lower cover 3, and the graphite tray 4 is placed on the placing table 31.
[0045] The SiC seed crystal 5 is placed in the graphite lower cover 3 through the graphite tray 4, and a heat-conducting partition layer 6 is arranged on the upper side of the SiC seed crystal 5.
[0046] The graphite upper cover 7 is mechanically installed at the upper end of the graphite lower cover 3, and is used in cooperation with the heat-conducting partition layer 6 to tightly press the heat-conducting partition layer 6 in the graphite lower cover 3.
[0047] It should be noted that the mechanical mode in the embodiment preferably uses a threaded connection mode, that is, in the embodiment, the graphite lower cover 3 is threadedly connected at the upper end opening of the graphite crucible 2, and the graphite upper cover 7 is threadedly connected at the upper end opening of the graphite lower cover 3, so as to realize the mechanical connection between the main body structures of the SiC crystal growth seed crystal mechanical installation device, facilitate disassembly and installation during use, and through the extrusion of the lower end pressing table 71 of the graphite upper cover 7 on the heat-conducting partition layer 6, the heat-conducting partition layer 6 can be horizontally placed on the upper side of the SiC seed crystal 5 and tightly contact the SiC seed crystal 5, thereby avoiding the direct contact of the seed crystal and the seed crystal adhesive material with the graphite plate, causing uneven heat distribution and uneven heat dissipation of the seed crystal, and the impurity pollution of the adhesive and the graphite plate to the crystal, and affecting the quality of the grown crystal. Through the arrangement of the heat-conducting partition layer 6, the graphite impurity pollution of the graphite upper cover 7 can be isolated, the temperature of the SiC seed crystal 5 can be uniformly distributed, and the heat generated during crystal growth can be discharged.
[0048] In a preferred embodiment, as shown in Figure 3 The structure diagram of the graphite upper cover 7 is shown in the figure, an outer thread is arranged on the outer side of the lower end pressing table 71 and connected with an inner thread at the upper end of the graphite lower cover 3, and the ground surface of the lower end pressing table 71 is a horizontal surface, so that the lower end pressing table 71 can tightly extrude the heat-conducting partition layer 6 during use, and the heat-conducting partition layer 6 tightly contacts the SiC seed crystal 5.
[0049] In a preferred embodiment, as shown in Figure 4 The structure diagram of the graphite lower cover 3 is shown in the figure, a threaded connection part is arranged at the lower end of the graphite lower cover 3 and connected with an inner thread at the upper end opening of the graphite crucible 2, so as to ensure the detachable connection between the graphite lower cover 3 and the graphite crucible 2.
[0050] In a preferred embodiment, as shown in Figure 5It is a structure schematic view of the graphite crucible 2, and an inner thread is arranged on an upper end opening part of the graphite crucible 2 and is threadedly connected with the graphite upper cover 3.
[0051] In a preferred embodiment, as Figure 6 It is a structure schematic view of the graphite tray 4, and the graphite tray 4 is detachably installed in the graphite lower cover 3, and a clamping table 41 is arranged on the graphite tray 4 and is used in cooperation with the SiC seed crystal 5, and the clamping table 41 is used for installing and fixing the SiC seed crystal 5.
[0052] In a preferred embodiment, as Figure 7 It is a structure schematic view of the SiC seed crystal 5, and the diameter of the SiC seed crystal 5 is same as the diameter of the clamping table 41, and the thickness of the SiC seed crystal 5 is greater than the distance between the clamping table 41 and the upper end opening of the graphite tray 4, so that the upper surface of the SiC seed crystal 5 can be in contact with the lower surface of the heat-conducting spacer 6 after installation.
[0053] In a preferred embodiment, as Figure 8 It is a structure schematic view of the heat-conducting spacer 6, and the heat-conducting spacer 6 is made of a material which does not pollute SiC material, can isolate graphite impurities of the graphite cover 7, uniformly distribute the temperature of the SiC seed crystal 5, and lead out heat generated during crystal growth, and the diameter of the heat-conducting spacer 6 is greater than the diameter of the SiC seed crystal 5.
[0054] The installation process of the SiC crystal growth seed crystal mechanical installation device includes:
[0055] Step 1. Lower cover assembly installation:
[0056] The graphite tray 4 is placed on the graphite lower cover 3, the SiC seed crystal 5 is placed on the graphite tray 4, the heat-conducting spacer 6 is placed on the SiC seed crystal 5, and finally the graphite upper cover 7 which is processed with threads is screwed and fixed on the graphite lower cover 3 with threads, and the heat-conducting spacer 6 is compressed;
[0057] Step 2. Overall installation
[0058] Then the SiC powder 1 is put into the graphite crucible 2, and the lower cover assembly and the graphite crucible 2 are fixed as a whole by screwing, and the assembly of the SiC crystal growth seed crystal mechanical installation device is completed.
[0059] The SiC crystal growth seed crystal mechanical installation device uses process includes: the installation method is used to the device, and after installation, SiC powder 1 is filled into the bottom of graphite crucible 2, SiC seed crystal 5 is fixed in graphite lower cover 3 by using heat-conducting partition 6, and there is a certain distance from the raw material surface; the whole graphite crucible 2 is placed in the graphite heating body, the temperature of the external graphite felt is adjusted, SiC powder 1 is placed in the high-temperature zone, and SiC seed crystal 5 is correspondingly placed in the low-temperature zone, the graphite crucible 2 is heated in a middle-frequency heating mode, and SiC crystal is prepared.
[0060] The above merely describes preferred embodiments of the present application, and is not intended to limit the scope of protection of the present application.
Claims
1. A mechanical mounting apparatus for SiC crystal growth seeds, characterized by: The utility model relates to a graphite crucible (2) and a graphite lower cover (3) are provided at the upper end opening of graphite crucible (2), graphite tray (4) is arranged in graphite lower cover (3), SiC seed crystal (5) is arranged in graphite lower cover (3) through graphite tray (4), and heat conduction partition (6) is arranged above SiC seed crystal (5), graphite upper cover (7) is arranged at the upper end of graphite lower cover (3) and matches heat conduction partition (6). The graphite lower cover (3) is mechanically connected with the graphite crucible (2), and a placement table (31) is arranged in the graphite lower cover (3), and the placement table (31) matches the graphite tray (4). The graphite upper cover (7) is provided with a pressing table (71) at the lower end, and the pressing table (71) is mechanically connected with the graphite lower cover (3). The lower end surface of the pressing table (71) is a plane and matches the heat conduction partition (6). The diameter of the heat conduction partition (6) is greater than the diameter of the SiC seed crystal (5), and the diameter of the heat conduction partition (6) is the same as the diameter of the pressing table (71).
2. A mechanical mounting apparatus for SiC crystal growth seed crystals as defined in claim 1, wherein: The graphite tray (4) is detachably arranged in the graphite lower cover (3), and a clamping table (41) is arranged in the graphite tray (4) and matches the SiC seed crystal (5).
3. A mechanical mounting apparatus for SiC crystal growth seed crystals as defined in claim 1, wherein: The diameter of the SiC seed crystal (5) is the same as the diameter of the clamping table (41), and the thickness of the SiC seed crystal (5) is greater than the setting depth of the clamping table (41).
4. A mechanical mounting apparatus for SiC crystal growth seed crystals as defined in claim 3, wherein: The heat conduction partition (6) is a heat conduction material for preventing pollution of the SiC seed crystal.
5. A mechanical mounting apparatus for SiC crystal growth seed crystals as defined in claim 3, wherein: The installation position of the SiC seed crystal (5) is a certain distance from the SiC powder (1) in the graphite crucible (2).
6. A mechanical mounting apparatus for SiC crystal growth seed crystals as defined in claim 1, wherein: The SiC powder (1) is located in a high-temperature zone in the graphite crucible (2), and the SiC seed crystal (5) is located in a low-temperature zone in the graphite crucible (2).
7. A mechanical mounting apparatus for SiC crystal growth seed crystals as defined in claim 6, wherein: 8. A mechanical mounting apparatus for SiC crystal growth seed crystals as defined in claim 1, wherein: 9. A mechanical mounting apparatus for SiC crystal growth seed crystals as defined in claim 1, wherein: 10. A mechanical mounting apparatus for SiC crystal growth seed crystals as defined in claim 9, wherein: