Preparation device of doped diamond film

Abstract

The utility model provides a preparation device of a doped diamond film. The preparation device comprises a first main body, a second main body, a heating assembly, a carrying assembly, a vacuum assembly and a laser emission assembly. The first main body is provided with a first cavity, the first cavity is provided with a base station used for bearing a base material, and the first cavity is used for being connected with reaction gas. The heating assembly is arranged in the first cavity, the second main body is provided with a second cavity, and the first cavity and the second cavity can be switched between a communicating state and an isolated state through the switch valve. The carrying assembly is arranged in the second cavity and used for conveying the doping target material from the second cavity to the first cavity or from the first cavity to the second cavity when the first cavity communicates with the second cavity. The vacuum assembly is used for vacuumizing the first cavity and / or the second cavity. The laser emitting assembly is used for emitting laser towards the doping target material located in the first cavity. According to the technical scheme, preparation of the doped diamond film doped with multiple elements is achieved.

Description

TECHNICAL FIELD

[0001] The utility model relates to diamond film technical field especially relates to a preparation device of doped diamond film. BACKGROUND

[0002] At present, in order to obtain the film of better performance, the way of hot wire chemical vapor deposition is used in the process of preparing diamond film to dope other elements in prior art, and doped diamond film is obtained. However, the doped diamond film prepared can only realize the doping of single kind of element. INNOVATION CONTENT

[0003] The utility model embodiment provides a preparation device of doped diamond film, which aims at realizing the preparation of doped diamond film of multiple element doping.

[0004] The utility model embodiment provides a preparation device of doped diamond film, which includes:

[0005] First main body, be equipped with first cavity, the first cavity is used for accessing reaction gas, the first cavity is equipped with the base station for carrying substrate;

[0006] Heating assembly, be located in the first cavity;

[0007] Second main body, be equipped with second cavity, the first main body and the second main body between be equipped with switch valve, the switch valve is used to make the first cavity and the second cavity switch between intercommunication and phase insulation state;

[0008] Carrying assembly, be located in the second cavity, the carrying assembly is used to when the first cavity and the second cavity are connected, carries doped target material from the second cavity to the first cavity or from the first cavity to the second cavity;

[0009] Vacuum component, for the first cavity and / or the second cavity is pumped;

[0010] Laser emission assembly is used for emitting laser towards the doped target material located in the first cavity

[0011] Optionally, the carrying assembly includes:

[0012] First bearing, be located in the second cavity, have a plurality of carrying portion for carrying the doped target material;

[0013] End effector, for being connectable to the doped target material;

[0014] First drive assembly, at least partial be located in the second cavity, transmission connection is located in the end effector, for driving the end effector to be active to the first cavity.

[0015] Optionally, the handling assembly further comprises:

[0016] a second driving assembly at least partially disposed in the second cavity and drivingly connected to the first carrier, the second driving assembly being configured to move the first carrier to move one of the plurality of the carriers to a first preset position.

[0017] Optionally, the first driving assembly is configured to move the end effector in a first direction, the end effector being located on one side of the first carrier in a second direction, the first direction being different from the second direction.

[0018] The handling assembly further comprises:

[0019] a third driving assembly at least partially disposed in the second cavity, the third driving assembly being configured to move the doped target on the carrier in the first preset position in a reverse direction of the second direction to a second preset position, and configured to move the doped target in the second preset position in a forward direction of the second direction to the carrier in the first preset position, the first direction being different from the second direction.

[0020] Optionally, each of the carriers is provided with a through hole penetrating through both sides of the first carrier in the second direction, the through hole being configured to accommodate the doped target.

[0021] The third driving assembly is capable of penetrating from one end of the through hole away from the end effector to one end of the through hole close to the end effector.

[0022] Optionally, the third driving assembly is provided with an annular portion, the annular portion being configured to be connectable to an edge portion of the doped target.

[0023] Optionally, a third body is provided between the first body and the second body, the third body being provided with a passage, two ends of the passage being respectively communicated with the first cavity and the second cavity, the third body being provided with a switch valve, the switch valve being configured to close or open the passage.

[0024] Optionally, the preparation device further comprises a second carrier, the second carrier being disposed in the first cavity and located in an extension direction of the passage, the second carrier being configured to carry the doped target.

[0025] Optionally, the first cavity is provided with a grid structure, the grid structure being configured to filter substances generated by the doped target under the laser irradiation; and / or,

[0026] The first cavity is equipped with an electromagnetic component, which is used to generate an electromagnetic field to filter the substances produced by the doped target under laser irradiation.

[0027] Optionally, the first body is provided with an observation window.

[0028] The apparatus for preparing doped diamond films provided in this embodiment of the invention allows for the following steps: A substrate is placed on a platform within a first cavity; a transport assembly is controlled to move a doped target into the first cavity; a switching valve is controlled to isolate the first and second cavities; a vacuum assembly is used to evacuate the first cavity; a reaction gas is introduced into the first cavity; a heating assembly is controlled to heat the reaction gas, causing it to decompose and generate carbon atoms; and a laser emission assembly is controlled to emit a laser beam toward the doped target within the first cavity. Under laser irradiation, the doped target generates a dopant, which contains atoms or molecules of at least one doping element, carbon atoms, and the dopant. After deposition on a substrate, a vacuum assembly is used to evacuate the second cavity. Then, a switching valve is controlled to connect the first and second cavities. A transport assembly moves the doped target from the first cavity to the second cavity, and then moves another doped target to the first cavity, thus replacing the doped target. Next, the switching valve is controlled to isolate the first and second cavities. A laser emitting assembly can then emit a laser beam again towards the replaced doped target in the first cavity. Under laser irradiation, the doped target produces dopants containing atoms or molecules of different doping elements. These dopants precipitate on the substrate to obtain a multi-element doped diamond film. Furthermore, during the fabrication process, the vacuum assembly evacuates the first cavity to reduce impurities, and the vacuum assembly evacuates the second cavity to minimize the impact on the environment of the first cavity during target replacement, thus facilitating the preparation of high-quality multi-element doped diamond films. Attached Figure Description

[0029] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0030] Figure 1 A left view of an apparatus for preparing a doped diamond thin film according to an embodiment of this application;

[0031] Figure 2 for Figure 1 A schematic cross-sectional view of the preparation apparatus along the AA direction;

[0032] Figure 3 Fig. 1 is a schematic view of a cross section of a preparation device along the direction of B-B; Figure 1

[0033] Figure 4 Fig. 2 is a right view of the preparation device provided by the embodiment of the present application;

[0034] Figure 5 Fig. 3 is a schematic view of a cross section of another preparation device for doping diamond thin film provided by the embodiment of the present application. DETAILED DESCRIPTION

[0035] The technical solutions in the embodiments of the present application will be apparently and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0036] Please refer to Figures 1 to 4 The embodiment of the present application provides a preparation device for doping diamond thin film, which comprises a first main body 10, a second main body 20, a heating assembly 30, a conveying assembly 40, a vacuum assembly (not shown) and a laser emitting assembly 50. The first main body 10 is provided with a first cavity 10a for placing a substrate and introducing a reaction gas. The heating assembly 30 is arranged in the first cavity 10a. The second main body 20 is provided with a second cavity 20a, and a switching valve 100 is arranged between the first main body 10 and the second main body 20, which is used to switch the first cavity 10a and the second cavity 20a between the state of being connected and the state of being isolated. The conveying assembly 40 is arranged in the second cavity 20a, which is used to convey the doping target from the second cavity 20a to the first cavity 10a or from the first cavity 10a to the second cavity 20a when the first cavity 10a and the second cavity 20a are connected. The vacuum assembly is used to vacuumize the first cavity 10a and / or the second cavity 20a. The laser emitting assembly 50 is used to emit laser towards the doping target located in the first cavity 10a.

[0037] ​The preparation device in the embodiment can heat the reaction gas entering the first cavity 10a by the heating assembly 30, deposit carbon atoms generated by decomposition of the reaction gas on the substrate, and can transport different doped target materials to the first cavity 10a by the conveying assembly 40. The laser emitting assembly 50 emits laser to the different doped target materials in the first cavity 10a, so that the different doped target materials obtain different dopants under the laser irradiation. The dopants include but are not limited to plasma, gas and solid particles, etc. Different dopants can contain atoms or molecules of different doped elements. The different dopants are deposited on the substrate to prepare a doped diamond film with multiple doped elements. Moreover, the vacuum assembly is connected to the first cavity 10a and the second cavity 20a. The first cavity 10a is subjected to vacuumizing treatment by the vacuum assembly, so as to reduce impurities in the first cavity 10a, so that the first cavity 10a reaches the required environmental conditions for reaction. The second cavity 20a is subjected to vacuumizing treatment by the vacuum assembly, so as to reduce impurities in the second cavity 20a. When the first cavity 10a and the second cavity 20a are switched to be in the connected state by replacing the doped target material by the conveying assembly 40, the influence on the environment in the first cavity 10a is small, so that a high-quality doped diamond film with multiple doped elements can be prepared.

[0038] For example, when the preparation device is applied to prepare a doped diamond film, a substrate can be placed in the first cavity 10a, and a plurality of doping targets can be placed in the second cavity 20a. When the control switch valve 100 is opened to allow the first cavity 10a and the second cavity 20a to be in a state of communication, the carrying assembly 40 disposed in the second cavity 20a can carry one of the plurality of doping targets to the first cavity 10a, and then the carrying assembly 40 is withdrawn to be accommodated in the second cavity 20a. When the control switch valve 100 is closed to allow the first cavity 10a and the second cavity 20a to be in a state of insulation, the first cavity 10a is vacuumized by the vacuum assembly, so that the first cavity 10a reaches the required environmental conditions. Then, the reaction gas is introduced into the first cavity 10a, and the heating assembly 30 disposed in the first cavity 10a is controlled to heat the reaction gas, so that carbon atoms are generated by decomposition of the reaction gas. The laser emitting assembly 5050 is controlled to emit laser towards the doping target in the first cavity 10a, so that the doping target is doped with dopants containing at least one kind of atomic or molecular of doping elements. The carbon atoms and the atomic or molecular of the dopants can be deposited on the substrate. When other elements need to be doped, the second cavity 20a is vacuumized by the vacuum assembly, and then the control switch valve 100 is controlled again to allow the first cavity 10a and the second cavity 20a to be in a state of communication. The carrying assembly 40 can carry the doping target in the first cavity 10a to the second cavity 20a again, and then carry another doping target of the plurality of doping targets in the second cavity 20a to the first cavity 10a, so as to replace the doping target. When the carrying assembly 40 is withdrawn to be accommodated in the second cavity 20a, the control switch valve 100 is controlled again to allow the first cavity 10a and the second cavity 20a to be in a state of insulation. The laser emitting assembly 5050 emits laser towards the replaced doping target in the first cavity 10a again, so that the doping target is doped with dopants containing atomic or molecular of different doping elements, and the dopants can be deposited on the substrate, so as to obtain a doped diamond film doped with multiple elements.

[0039] It can be understood that the first cavity 10a and the second cavity 20a can be switched between a state of communication with the external environment and a state of insulation from the external environment. Specifically, when the first cavity 10a is in a state of insulation from the external environment, and only one of the first cavity 10a and the external environment can be in a state of communication with the second cavity 20a, or both the first cavity 10a and the external environment are in a state of insulation from the second cavity 20a, the heating assembly 30 is used to heat the reaction gas to make carbon atoms deposit on the substrate, and the laser emitting assembly 50 is used to emit laser towards the doping target in the first cavity 10a to make dopants deposit on the substrate.

[0040] For example, the preparation device can be used to prepare a doped diamond film. The substrate can be placed in the first cavity 10a, and a plurality of doping targets can be placed in the second cavity 20a. When the control switch valve 100 is opened to allow the first cavity 10a and the second cavity 20a to be in a state of communication, the carrying assembly 40 disposed in the second cavity 20a can carry one of the plurality of doping targets to the first cavity 10a, and then the carrying assembly 40 is withdrawn to be accommodated in the second cavity 20a. When the control switch valve 100 is closed to allow the first cavity 10a and the second cavity 20a to be in a state of insulation, the first cavity 10a is vacuumized by the vacuum assembly, so that the first cavity 10a reaches the required environmental conditions. Then, the reaction gas is introduced into the first cavity 10a, and the heating assembly 30 disposed in the first cavity 10a is controlled to heat the reaction gas, so that carbon atoms are generated by decomposition of the reaction gas. The laser emitting assembly 5050 is controlled to emit laser towards the doping target in the first cavity 10a, so that the doping target is doped with dopants containing at least one kind of atomic or molecular of doping elements. The carbon atoms and the atomic or molecular of the dopants can be deposited on the substrate, so as to obtain a doped diamond film doped with multiple elements. Figure 1As shown, the first body 10 is provided with a first opening 10b connecting the first cavity 10a and the external environment, and a first movable door (not shown) is movably connected to the first body 10. The first movable door can be switched between a state of closing the first opening 10b and a state of opening the first opening 10b, so as to switch the first cavity 10a and the external environment between an isolated state and a connected state. Specifically, the first movable door is in a state of opening the first opening 10b, so that the first cavity 10a and the external environment are connected through the first opening 10b. The preset component can be placed in the first cavity 10a through the first opening 10b, or taken out from the first cavity 10a. For example, the substrate can be placed in the first cavity 10a through the first opening 10b, or taken out from the first cavity 10a. For another example, the heating assembly 30 can be installed into the first cavity 10a through the first opening 10b, or removed from the first cavity 10a.

[0041] For example, Figure 4 As shown, the second body 20 is provided with a second opening 20b connecting the second cavity 20a and the external environment, and a second movable door is movably connected to the second body 20. The second movable door can be switched between a state of closing the second opening 20b and a state of opening the second opening 20b, so as to switch the second cavity 20a and the external environment between an isolated state and a connected state. Specifically, the second movable door is in a state of opening the second opening 20b, so that the second cavity 20a and the external environment are connected through the second opening 20b. The preset component can be placed in the second cavity 20a through the second opening 20b, or taken out from the second cavity 20a. For example, the doped target material can be placed in the second cavity 20a through the second opening 20b, or taken out from the second cavity 20a. For another example, the carrying assembly 40 can be installed into the second cavity 20a through the second opening 20b, or removed from the second cavity 20a.

[0042] It is worth mentioning that, the heating assembly 30 heats the reaction gas at the same time as the laser emission assembly 50 emits laser towards the doped target material in the first cavity 10a, or the heating assembly 30 stops heating after heating for a period of time, and then the laser emission assembly 50 emits laser towards the doped target material in the first cavity 10a. In other words, the heating time of the heating assembly 30 and the time of emitting laser by the laser emission assembly 50 can be adjusted according to actual conditions, which is not limited herein.

[0043] For example, the first body 10 can be a laser protection body, which prevents laser from penetrating from the first cavity 10a to the outside of the first body 10 to irradiate the human body, thereby avoiding harm to the human body.

[0044] In some embodiments,Figure 1 As shown, the first body 10 is provided with a light-transmitting window, and the laser emitted by the laser emitting assembly 50 can enter the first cavity 10a and irradiate on the doped target material through the light-transmitting window.

[0045] In some embodiments, the preparation device further comprises a protective cover (not shown), and the protective cover and the first body 10 enclose a containing space, and the laser emitting assembly 50 can be located in the containing space, so as to prevent the laser emitted by the laser emitting assembly 50 from contacting the human body and causing harm to the human body during the transmission to the first body 10, and meanwhile, the laser emitting assembly 50 can be prevented from being affected by external interference and affecting the preparation quality.

[0046] For example, the power of the laser emitted by the laser emitting assembly 50 can be adjusted to meet the irradiation conditions of different doped target materials, and meanwhile, the concentration of the dopant can be adjusted.

[0047] For example, as shown in Figure 3 As shown, the heating assembly 30 comprises a hot wire 31, and the hot wire 31 is heated by electricity to heat the reaction gas. Specifically, as shown in Figure 3 As shown, the heating assembly 30 comprises four electrodes 32, and the four electrodes 32 are symmetrically distributed in pairs, wherein one wire holder 33 is arranged on each of two adjacent electrodes 32, and another wire holder 33 is arranged on the other two adjacent electrodes 32, and the two wire holders 33 are oppositely spaced apart, so that the two ends of the hot wire 31 can be connected to the two wire holders 33 respectively to fix the hot wire 31. A plurality of hot wires 31 can be uniformly and spaced apart.

[0048] For example, the laser emitting assembly 50 can emit pulsed laser towards the doped target material of the first cavity 10a.

[0049] For example, as shown in Figure 2 As shown, the first cavity 10a is provided with a base 11 for carrying the substrate, and the substrate can be placed on the base 11. Specifically, the base 11 can be a movable base 11, and the distance between the substrate arranged on the base 11 and the hot wire 31 can be adjusted by controlling the movement of the base 11. For example, along the direction of gravity, the base 11 is located below the hot wire 31, and the base 11 can be a lifting base 11, and the distance between the substrate on the base 11 and the hot wire 31 can be adjusted by controlling the lifting of the base 11.

[0050] For example, the surface of the doped target material to be irradiated by laser is oppositely arranged with the deposition surface of the substrate. For example, along the direction of gravity, the doped target material is located above the substrate, and the laser emitting assembly 50 can emit laser towards the lower surface of the doped target material, and the carbon atoms and the dopant can be deposited on the upper surface of the substrate. Wherein, the doped target material can be located directly above the substrate, or the doped target material can be located obliquely above the substrate.

[0051] In some embodiments, the first body is provided with an observation window 13 through which the state in the first cavity 10a can be observed, for example, the preparation of the doped diamond film in the first cavity 10a can be observed through the observation window 13, or whether the carrying assembly 40 carries the doped target into the designated position in the first cavity 10a can be observed through the observation window 13.

[0052] For example, the observation window 13 can be one or more.

[0053] In some embodiments, as shown in Figure 2 and Figure 3 The carrying assembly 40 includes a first carrier 41, an end effector 42, and a first driving assembly. The first carrier 41 is arranged in the second cavity 20a and has a plurality of carrying portions 411 for carrying the doped targets. The end effector 42 is used to connect to the doped targets. The first driving assembly is at least partially arranged in the second cavity 20a, and the first driving assembly is drivingly connected to the end effector 42 and used to drive the end effector 42 to move to the first cavity 10a. It can be understood that the first carrier 41 can carry a plurality of doped targets, so that before the doped targets to be transported to the first cavity 10a are replaced, the doped targets to be transported to the first cavity 10a are located in the second cavity 20a. When the doped targets in the first cavity 10a need to be replaced, the end effector 42 can be driven by the first driving assembly to move to the first cavity 10a after the first cavity 10a and the second cavity 20a are connected by controlling the on-off valve 100, the doped targets in the first cavity 10a are transported to the first carrier 41 in the second cavity 20a, and then the end effector 42 can drive another doped target on the first carrier 41 to move to the first cavity 10a by the first driving assembly. The second cavity 20a is always isolated from the external environment during this process, which saves the time required for the replacement of the doped targets and is conducive to reducing the influence on the environment of the first cavity 10a.

[0054] For example, when the number of the carrying portions 411 is greater than or equal to the number of the doped targets, the second cavity 20a can be kept in an isolated state from the external environment during the preparation of the doped diamond film. When the number of the carrying portions 411 is less than the number of the doped targets, the second cavity 20a can be kept in a connected state with the external environment while the first cavity 10a and the external environment are kept in an isolated state and the first cavity 10a and the second cavity 20a are kept in an isolated state. The doped targets replaced from the first cavity 10a are taken out, and the doped targets to be transported are placed on the first carrier 41. After the second cavity 20a and the external environment are kept in a connected state, the second cavity 20a is vacuumized by the vacuum assembly, and then the first cavity 10a and the second cavity 20a are kept in a connected state by controlling the on-off valve 100, so as to replace the doped targets.

[0055] For example, the end effector 42 can adsorb the doped target by vacuum adsorption, or, as shown in the figure, the end effector 42 includes a mechanical gripper, and the end effector 42 can grab the doped target by clamping, and then move the doped target to the first cavity 10a under the driving of the first driving assembly. Figure 3

[0056] For example, the first driving assembly includes a first driving motor and a first transmission assembly, and the first driving motor is drivingly connected to the end effector 42 through the first transmission assembly. For example, as shown in the figure, a slide rail is arranged in the first cavity 10a, and the end effector 42 is slidingly connected to the slide rail. The first transmission assembly can include a belt transmission assembly, and the end effector 42 is drivingly connected to the first driving member through the belt transmission assembly, so that the first driving member can drive the end effector 42 to slide relative to the slide rail through the belt transmission assembly, so that the end effector 42 can transport the doped target from the second cavity 20a to the first cavity 10a. Figure 3

[0057] Further, as shown in the figure, the conveying assembly 40 further includes a second driving assembly 43, and the second driving assembly 43 is at least partially arranged in the second cavity 20a. The second driving assembly 43 is drivingly connected to the first carrier 41, and the second driving assembly 43 is used to drive the first carrier 41 to move, so that one of the plurality of carrier portions 411 moves to a first preset position. It can be understood that the second driving assembly 43 can drive the first carrier 41 to move, so that any one of the plurality of carrier portions 411 of the first carrier 41 moves to the first preset position, and the first preset position is a preset position in the second cavity 20a, so that the end effector 42 can obtain the doped target on the first carrier 41 from a certain specific position of the second cavity 20a under the driving of the first driving assembly, or place the doped target in the first cavity 10a at a certain specific position after moving the doped target in the first cavity 10a to the second cavity 20a, limit the movement of the end effector 42, simplify the transmission structure between the end effector 42 and the first driving assembly, and facilitate the movement of the end effector 42 between the first cavity 10a and the second cavity 20a. Figure 2 For example, the second driving assembly 43 is used to drive the first carrier 41 to rotate, or the second driving assembly 43 is used to drive the first carrier 41 to slide. Specifically, the first driving assembly drives the first carrier 41 to rotate, and the plurality of carrier portions 411 are arranged in sequence along the rotation direction of the first carrier 41, so that the first driving assembly can drive any one of the plurality of carrier portions 411 to rotate to the first preset position.

[0058] Further, as shown in the figure, the conveying assembly 40 further includes a second driving assembly 43, and the second driving assembly 43 is at least partially arranged in the second cavity 20a. The second driving assembly 43 is drivingly connected to the first carrier 41, and the second driving assembly 43 is used to drive the first carrier 41 to move, so that one of the plurality of carrier portions 411 moves to a first preset position. It can be understood that the second driving assembly 43 can drive the first carrier 41 to move, so that any one of the plurality of carrier portions 411 of the first carrier 41 moves to the first preset position, and the first preset position is a preset position in the second cavity 20a, so that the end effector 42 can obtain the doped target on the first carrier 41 from a certain specific position of the second cavity 20a under the driving of the first driving assembly, or place the doped target in the first cavity 10a at a certain specific position after moving the doped target in the first cavity 10a to the second cavity 20a, limit the movement of the end effector 42, simplify the transmission structure between the end effector 42 and the first driving assembly, and facilitate the movement of the end effector 42 between the first cavity 10a and the second cavity 20a.

[0059] Figure 2 ​​​As shown, the first driving assembly is configured to drive the end effector 42 to move in a first direction, the end effector 42 is located at one side of the first carrier 41 along a second direction, and the first direction is different from the second direction. The carrying assembly 40 further comprises a third driving assembly 44, the third driving assembly 44 is at least partially arranged in the second cavity 20a, and the third driving assembly 44 is configured to drive the doped target on the carrier 411 in the first preset position to move in the second direction to a second preset position, and is configured to drive the doped target in the second preset position to move in the second direction to the carrier 411 in the first preset position. It can be understood that the second preset position is a preset position in the second cavity 20a, which is different from the first preset position, the third driving assembly 44 can drive the doped target on the carrier 411 in the first preset position to move in the second direction to the second preset position, the end effector 42 can obtain the doped target from the second preset position and move in the reverse direction of the first direction to carry the doped target to the first cavity 10a, or the end effector 42 can obtain the doped target from the first cavity 10a and move in the forward direction of the first direction to move the doped target to the second preset position of the second cavity 20a, and the third driving assembly 44 can obtain the doped target in the second preset position from the end effector 42 and drive the doped target to move in the forward direction of the second direction to the carrier 411 in the first preset position. In this way, the end effector 42 only needs to move in the first direction, the movement of the end effector 42 is limited, the transmission structure between the end effector 42 and the first driving assembly is simplified, and the end effector 42 is facilitated to move between the first cavity 10a and the second cavity 20a.

[0060] For example, the first direction is shown as the Y0-Y1 direction in Figure 2 , the second direction is shown as the Z0-Z1 direction in Figure 2 , the forward direction of the second direction is shown as the Z0 direction in Figure 1 , and the reverse direction of the second direction is shown as the Z1 direction in Figure 1 .

[0061] In some embodiments, as shown in Figure 3 , each carrier 411 is provided with a through hole 411a penetrating through the first carrier 41 on opposite sides along the second direction, and the through hole 411a is configured to accommodate the doped target. The third driving assembly 44 can pass from one end of the through hole 411a away from the end effector 42 to one end of the through hole 411a close to the end effector 42. It can be understood that the doped target can be located in the through hole 411a of the carrier 411 to fix the doped target, and the third driving assembly 44 can pass through the through hole 411a to push the doped target to the second preset position along the second direction, facilitating the third driving assembly 44 to drive the doped target to move.

[0062] Exemplarily, the first carrier 41 is rotatable around a second direction shown by the Z0-Z1 direction in the figure, and when the carrier portion 411 of the first carrier 41 is rotated to a first preset position around the Z0-Z1 direction, the third driving assembly 44 is movable along the reverse direction of the second direction, and the third driving assembly 44 is movable from the one end of the through hole 411a away from the end execution member 42 to the one end of the through hole 411a close to the end execution member 42. Figure 2

[0063] Exemplarily, as shown in the figure Figure 3 , the through hole 411a can be a stepped hole, the doped target is located at the one end of the through hole 411a close to the end execution member 42 and supported on the stepped surface of the through hole 411a, and the third driving assembly 44 is movable from the one end of the through hole 411a away from the end execution member 42 to the one end of the through hole 411a close to the end execution member 42, so as to lift the doped target and drive the doped target to move along the reverse direction of the second direction to a second preset position.

[0064] Exemplarily, the third driving assembly 44 includes an electric push rod.

[0065] Further, as shown in the figures Figure 2 and Figure 3 , the third driving assembly 44 is provided with an annular portion 441, and the annular portion 441 is used for being connected to the edge portion of the doped target. It can be understood that the third driving assembly 44 is connected to the edge portion of the doped target through the annular portion 441, so as to avoid impacting or wearing the middle portion structure of the doped target, and the laser emitting assembly 50 can emit laser towards the middle portion of the doped target, so as to prepare a high-quality doped diamond film.

[0066] In some embodiments, as shown in the figures Figure 2 and Figure 3 , a third body 60 is arranged between the first body 10 and the second body 20, the third body 60 is provided with a channel 60a, two ends of the channel 60a are respectively communicated with the first cavity 10a and the second cavity 20a, the third body 60 is provided with a switch valve 100, and the switch valve 100 is used for closing or opening the channel 60a, so as to switch the first cavity 10a and the second cavity 20a between the state of being separated and the state of being communicated. It can be understood that the first cavity 10a and the second cavity 20a need to accommodate more components, and the space required by the first cavity 10a and the second cavity 20a is larger, a channel 60a is arranged in the third body 60 between the first body 10 and the second body 20, so that the radial dimension of the channel 60a is smaller than the first cavity 10a and the second cavity 20a, and the influence on the environment in the first cavity 10a can be reduced when the first cavity 10a and the second cavity 20a are switched to the state of being communicated.

[0067] ​It can be understood that the radial dimension of the channel 60a can be adjusted according to the structure of the carrying assembly 40. Specifically, as described above, simplifying the transmission structure of the end effector 42 and the first driving assembly is conducive to reducing the size of the end effector 42 and the first driving assembly transmission structure, and further conducive to reducing the radial dimension of the channel 60a, and reducing the influence on the environment of the first cavity 10a.

[0068] For example, the switch valve 100 includes a flapper valve. By controlling the activity of the flapper, the flapper can close or open the channel 60a.

[0069] In some embodiments, the preparation device further includes a second carrier 12, which is arranged in the first cavity 10a and is used to carry the doped target material transported to the first cavity 10a.

[0070] For example, the second carrier 12 has a supporting plate. The end effector 42 can move the doped target material to above the supporting plate in the direction of gravity and place the doped target material on the supporting plate. Specifically, the supporting plate can be provided with a clearance hole. When the supporting plate carries the doped target material, the edge part of the doped target material can be supported on the supporting plate, and the middle part of the doped target material is arranged corresponding to the clearance hole, so that the laser can pass through the clearance hole and irradiate the middle part of the doped target material.

[0071] Further, as shown in Figure 2 , the second carrier 12 is located in the extension direction of the channel 60a. In this way, it is convenient for the carrying assembly 40 to place the doped target material on the second carrier 12 after the doped target material passes through the channel 60a, reduces the requirement for the degree of freedom of the carrying assembly 40, simplifies the structure of the carrying assembly 40, reduces the radial dimension of the channel 60a, and reduces the influence of the second cavity 20a on the environment in the first cavity 10a.

[0072] In some embodiments, as shown in Figure 3 , the first cavity 10a is provided with a grid structure 13a. The grid structure 13a is used to filter the substances generated by the doped target material under laser irradiation, so that the dopant satisfying the preset condition can pass through the grid of the grid structure 13a and deposit on the substrate, while the large particles and low-energy ions are blocked by the grid structure 13 to avoid the large particles and low-energy ions depositing on the substrate to affect the quality of the doped diamond film.

[0073] For example, the shape of the grid includes but is not limited to a circle, an ellipse, a square, etc.

[0074] For example, the doped target material, the grid structure 13a, and the substrate are sequentially arranged in a preset direction. For example, the doped target material, the grid structure 13a, and the substrate are sequentially and spaced apart in the direction of gravity.

[0075] The baffle plate is provided with a mesh structure 13a, and the baffle plate is arranged in the first cavity 10a.

[0076] In some embodiments, the baffle plate is provided with an avoiding hole, so that the laser emitted by the laser emitting assembly 50 can pass through the avoiding hole and irradiate the doped target material, avoiding the baffle plate from blocking the laser.

[0077] The mesh structure 13a is arranged around the outer periphery of the avoiding hole, and the mesh structure 13a is arranged at intervals between the mesh and the avoiding hole.

[0078] Further, the baffle plate is movably connected to the first body 10, and the baffle plate can move in the first cavity 10a relative to the first body 10, so that the baffle plate can move relative to the doped target material arranged in the first cavity 10a, so that the baffle plate can be switched between the shielding state and the avoiding state according to the actual situation. In the shielding state, the baffle plate shields the doped target material, thereby filtering the substances generated by the doped target material under laser irradiation, and in the avoiding state, the doped target material is exposed, and the baffle plate does not filter the substances generated by the doped target material under laser irradiation.

[0079] The baffle plate is rotatably connected to the first body 10, or the baffle plate is slidably connected to the first body 10.

[0080] As shown in Figure 5 In some embodiments, the first cavity 10a is also provided with an electromagnetic assembly 70, and the electromagnetic assembly 70 is used to generate an electromagnetic field to filter the substances generated by the doped target material under laser irradiation, so that the doped substances meeting the preset conditions can be deposited on the substrate, and impurities such as large particles and low-energy ions are blocked under the action of the electromagnetic field, avoiding the large particles and low-energy ions from being deposited on the substrate to affect the quality of the doped diamond film.

[0081] The electromagnetic assembly 70 includes an electromagnetic ring, and the electromagnetic ring generates an electromagnetic field when powered.

[0082] The electromagnetic assembly 70 is arranged between the doped target material and the substrate. The electromagnetic assembly 70 is arranged at intervals between the doped target material and the substrate.

[0083] The mesh structure 13a is arranged around the outer periphery of the avoiding hole, and the mesh structure 13a is arranged at intervals between the mesh and the avoiding hole.

[0084] Further, the electromagnetic assembly 70 includes an electromagnetic ring, and the electromagnetic ring generates an electromagnetic field when powered.

[0085] The electromagnetic assembly 70 includes an electromagnetic ring, and the electromagnetic ring generates an electromagnetic field when powered. Figure 5As shown, the second carrier and the base can be located on opposite sides of the axis of the electromagnetic ring, so that the doped target and the substrate can be located on opposite sides of the axis of the electromagnetic ring. Specifically, the doped target and the substrate can be located on the axis of the electromagnetic ring.

[0086] For example, the opposite sides of the electromagnetic ring can be connected to the first body 10 by connecting rods, so that the electromagnetic ring is arranged between the second carrier and the base, and the electromagnetic ring is arranged spaced apart from the second carrier and the base.

[0087] The above is only a specific embodiment of the present application, but the protection scope of the present application is not limited thereto, and any person skilled in the art can easily think of various equivalent modifications or replacements within the technical range disclosed by the present application, and these modifications or replacements should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. An apparatus for preparing a diamond-doped thin film, characterized in that, The preparation device comprises: a first body provided with a first cavity for accessing reaction gas, the first cavity being provided with a base for carrying a substrate; a heating assembly arranged in the first cavity; a second body provided with a second cavity, a switching valve being arranged between the first body and the second body, the switching valve being used to switch the first cavity and the second cavity between a state of being connected and a state of being isolated; a conveying assembly arranged in the second cavity, the conveying assembly being used to convey a doped target from the second cavity to the first cavity or from the first cavity to the second cavity when the first cavity and the second cavity are connected; a vacuum assembly used to vacuumize the first cavity and / or the second cavity; a laser emitting assembly used to emit laser light towards the doped target located in the first cavity.

2. The apparatus for producing a doped diamond thin film according to claim 1, wherein The conveying assembly comprises: a first carrier arranged in the second cavity and provided with a plurality of carrying portions for carrying the doped target; an end effector used to be connected to the doped target; a first driving assembly at least partially arranged in the second cavity and drivingly connected to the end effector, the first driving assembly being used to drive the end effector to move to the first cavity.

3. The apparatus for producing a doped diamond thin film according to claim 2, wherein The conveying assembly further comprises: a second driving assembly at least partially arranged in the second cavity and drivingly connected to the first carrier, the second driving assembly being used to drive the first carrier to move so that one of the carrying portions moves to a first preset position.

4. The apparatus for producing a doped diamond thin film according to claim 3, wherein The first driving assembly is used to drive the end effector to move in a first direction, the end effector being located on one side of the first carrier in a second direction, the first direction being different from the second direction; The conveying assembly further comprises: a third driving assembly at least partially arranged in the second cavity, the third driving assembly being used to drive the doped target on the carrying portion in the first preset position to move to a second preset position in the opposite direction of the second direction, and being used to drive the doped target in the second preset position to move to the carrying portion in the first preset position in the positive direction of the second direction, the first direction being different from the second direction.

5. The apparatus for producing a doped diamond thin film according to claim 4, wherein Each of the carrying portions is provided with a through hole penetrating through the first carrier on two opposite sides in the second direction, the through hole being used to accommodate the doped target; The third driving assembly can pass from one end of the through hole away from the end effector to one end of the through hole close to the end effector.

6. The apparatus for producing a doped diamond thin film according to claim 5, wherein The third driving assembly is provided with an annular portion used to be connected to an edge portion of the doped target.

7. The apparatus for producing a doped diamond thin film according to any one of claims 1 to 6, wherein A third body is arranged between the first body and the second body, the third body being provided with a channel, two ends of the channel being connected to the first cavity and the second cavity respectively, the third body being provided with a switching valve used to close or open the channel.

8. The apparatus for producing a doped diamond thin film according to claim 7, wherein The preparation device further comprises a second carrier arranged in the first cavity and located in the extension direction of the channel, the second carrier being used to carry the doped target.

9. The apparatus for producing a doped diamond thin film according to any one of claims 1 to 6, wherein The first cavity is provided with a grid structure for filtering substances generated by the doped target material under the laser irradiation; and / or, The first cavity is provided with an electromagnetic assembly for generating an electromagnetic field to filter substances generated by the doped target material under the laser irradiation.

10. The apparatus for producing a doped diamond thin film according to any one of claims 1 to 6, wherein The first main body is provided with an observation window.

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