Spraying device and thin film deposition equipment

Abstract

The utility model provides a spraying device and thin film deposition equipment, the spraying device comprises a cavity assembly and a fan assembly, a mixing cavity and a reaction cavity which are communicated with each other are formed in the cavity assembly, a spraying plate is arranged between the mixing cavity and the reaction cavity, and the fan assembly is arranged in the mixing cavity. The cavity assembly is provided with a via hole for communicating the mixing cavity with an external air passage; the fan assembly comprises an air uniformizing fan, and the air uniformizing fan is located in the mixing cavity; when entering the mixing cavity through the via holes from an external gas channel, various reaction gases are mixed by the gas uniformizing fan, then flow through the spraying plate and enter the reaction cavity. The mixing cavity and the reaction cavity are arranged in the cavity assembly, the gas uniformizing fan is arranged in the mixing cavity, reaction gas is accelerated to be mixed by the gas uniformizing fan when flowing into the mixing cavity, the mixing uniformity of the reaction gas is improved, and then the reaction gas enters the reaction cavity through the spraying plate for thin film deposition. The uniformity of thin film deposition is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the field of semiconductor production especially relates to a spraying device and thin film deposition equipment. BACKGROUND

[0002] In the semiconductor production technology, thin film deposition technology is one of the important and key technologies, in the thin film deposition equipment, through the reaction of the multiple reaction gases that are input to deposit a layer of thin film on the wafer surface, so that the micro device inside the chip can be created.

[0003] In the thin film deposition equipment, the spraying device is one of the important components, through the high density, uniform gas flow nozzle that it is covered, the reaction source gas is uniformly and stably delivered to the wafer surface, so that the uniformity of thin film and the repeatability of process are effectively improved.In the process of forming thin film, multiple reaction gases are input into the reaction chamber of thin film deposition equipment to make the multiple reaction gases react to form thin film on the wafer surface;Since the multiple reaction gases are directly input into the reaction chamber, the multiple reaction gases may not be mixed uniformly, thereby causing the thin film generated on the wafer surface to be uneven. SUMMARY

[0004] The embodiment of the utility model provides a kind of spraying device and thin film deposition equipment, to improve the uniformity of multiple reaction gas mixing, to improve the uniformity of wafer surface generated thin film.

[0005] The utility model provides a kind of spraying device, it includes:

[0006] Cavity component, inside forming intercommunication mixing chamber and reaction chamber, be equipped with spray plate between the mixing chamber and the reaction chamber, the cavity component is equipped with via to connect the mixing chamber and external air channel;

[0007] Fan assembly, including uniform fan, the uniform fan is located in the mixing chamber;

[0008] Wherein, multiple reaction gases are mixed by the uniform fan after entering the mixing chamber by external air channel via the via, and then flow through the spray plate and enter the reaction chamber.

[0009] In the spraying device provided by the utility model, the spraying device further includes connecting piece, the first air channel is equipped in the connecting piece, and the through hole that is equipped with to the first air channel is to the outside of the connecting piece, the first air channel is communicated with the mixing chamber.

[0010] In the spraying device, the spraying device further comprises a sealing piece, two ends of the sealing piece are connected with the connecting piece and the cavity assembly respectively, an air inlet channel is arranged in the sealing piece and penetrates through two ends of the sealing piece, and the air inlet channel is connected with the first air channel and the mixing cavity.

[0011] In the spraying device, the fan assembly further comprises a motor and a shaft coupling, two ends of the shaft coupling are fixedly connected with the motor and the connecting piece respectively, and one end of the air uniformizing fan is connected with the shaft coupling; wherein the motor is started to drive the shaft coupling to rotate the air uniformizing fan.

[0012] In the spraying device, the air uniformizing fan comprises a rotating shaft and a plurality of fan blades, one end of the rotating shaft is connected with the shaft coupling, the other end of the rotating shaft extends into the mixing cavity, and the plurality of fan blades are fixedly arranged at the other end of the rotating shaft in a circumferential direction of the rotating shaft.

[0013] In the spraying device, the cavity assembly comprises an upper cover plate, the bottom end of the upper cover plate is recessed upwards to form the mixing cavity, and the bottom end of the upper cover plate abuts against the spraying plate.

[0014] In the spraying device, the mixing cavity is in a conical structure, and the via is located at the top of the mixing cavity.

[0015] In the spraying device, the cavity assembly further comprises an outer ring, the outer ring is sleeved around the periphery of the spraying plate, a reaction cavity is formed below the spraying plate by the outer ring, the outer ring is provided with a second air channel penetrating through the outer surface of the outer ring and the reaction cavity, and the second air channel is used for introducing other reaction gas into the reaction cavity.

[0016] In the spraying device, the cavity assembly further comprises a cleaning ring, the cleaning ring is fixedly connected with the bottom end of the outer ring, the cleaning ring and the inner part of the outer ring form the reaction cavity, the cleaning ring is provided with a third air channel penetrating through the outer surface of the cleaning ring and the reaction cavity, and the third air channel is used for introducing another reaction gas into the reaction cavity.

[0017] The application further provides a thin film deposition device comprising the spraying device.

[0018] According to the application, the mixing cavity and the reaction cavity are arranged in the cavity assembly, and the air uniformizing fan is arranged in the mixing cavity, so that when the reaction gas flows into the mixing cavity, the reaction gas is accelerated and mixed by the air uniformizing fan, the uniformity of the reaction gas is improved, and then the reaction gas enters the reaction cavity through the spraying plate to perform thin film deposition, so that the uniformity of the thin film deposition is improved. BRIEF DESCRIPTION OF DRAWINGS

[0019] In order to more clearly illustrate the technical scheme of the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced as follows. Obviously, the drawings in the following description are some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor on the basis of these drawings.

[0020] Figure 1 is a sectional view of the spraying device in the embodiments of the present application;

[0021] Figure 2 is another sectional view of the spraying device in the embodiments of the present application;

[0022] Figure 3 is a structural view of the spraying device in the embodiments of the present application;

[0023] Figure 4 is another structural view of the spraying device in the embodiments of the present application;

[0024] The various reference signs in the drawings are as follows:

[0025] 1, cavity assembly; 11, mixing cavity; 12, reaction cavity; 13, spraying plate; 14, upper cover plate; 141, via hole; 15, outer ring; 151, second air duct; 16, cleaning ring; 161, third air duct; 2, fan assembly; 21, uniform air fan; 211, rotating shaft; 212, fan blade; 22, motor; 23, coupling; 3, connecting piece; 31, first air duct; 32, through hole; 4, sealing piece; 41, air inlet channel. DETAILED DESCRIPTION

[0026] It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict. The preferred embodiments of the present application will be described in detail with reference to the drawings.

[0027] Referring to Figures 1 to 4 , which shows an embodiment of the spraying device of the present application. The spraying device comprises a cavity assembly 1 and a fan assembly 2, the cavity assembly 1 forms a mixing cavity 11 and a reaction cavity 12 which are in communication with each other inside, a spraying plate 13 is arranged between the mixing cavity 11 and the reaction cavity 12, the cavity assembly 1 is provided with a via hole 141 to communicate the mixing cavity 11 and an external air duct; the fan assembly 2 comprises a uniform air fan 21, the uniform air fan 21 is located in the mixing cavity 11; wherein a plurality of reaction gases enter the mixing cavity 11 from the external air duct through the via hole 141, are mixed by the uniform air fan 21, flow through the spraying plate 13 and enter the reaction cavity 12.

[0028] Specifically, the spraying device is installed on a thin film deposition equipment for uniformly and stably delivering reaction gas to a wafer surface; the spraying device comprises a cavity assembly 1 and a fan assembly 2, the cavity assembly 1 is used for forming a closed space so that the reaction gas reacts in the closed space and forms a thin film on the wafer surface; the fan assembly 2 is used for mixing the reaction gas uniformly, thereby improving the uniformity of the mixed reaction gas, so that the uniformity of the thin film formed on the wafer surface is higher, and the quality of the finally produced product is better.

[0029] The inside of the cavity assembly 1 forms a mixing cavity 11 and a reaction cavity 12, that is, the cavity assembly 1 encloses the mixing cavity 11 and the reaction cavity 12, the mixing cavity 11 and the reaction cavity 12 are both closed spaces, the mixing cavity 11 and the reaction cavity 12 are communicated with each other, and the mixing cavity 11 is used for mixing the reaction gas, and the reaction cavity 12 is used for placing the wafer and making the reaction gas react here; a spraying plate 13 is arranged between the mixing cavity 11 and the reaction cavity 12, the spraying plate 13 is used for uniformly and stably delivering the reaction gas mixed in the mixing cavity 11 into the reaction cavity 12, thereby improving the uniformity of the thin film generated by the reaction gas on the wafer surface; one end of the cavity assembly 1 is provided with a through hole 141, the through hole 141 penetrates the outside of the cavity assembly 1 and the mixing cavity 11, and one side of the through hole 141 is connected with an external air channel, so that the reaction gas of the external air channel can flow into the mixing cavity 11.

[0030] The fan assembly 2 comprises a uniform gas fan 21, the uniform gas fan 21 is located in the mixing cavity 11, and when the uniform gas fan 21 rotates, the mixed reaction gas can be accelerated and the uniformity of the mixed reaction gas can be improved, the uniform gas fan 21 can mix the reaction gas first, which is conducive to the uniform arrival of the reaction gas on the wafer surface.

[0031] When the spraying device is started, the uniform gas fan 21 rotates, the reaction gas flows into the mixing cavity 11 from the external air channel through the through hole 141, and when flowing to the mixing cavity 11, the flow of the reaction gas is accelerated by the uniform gas fan 21 located in the mixing cavity 11, and the mixed reaction gas is accelerated and the uniformity of the mixed reaction gas is improved, the mixed reaction gas flows to the reaction cavity 12 further uniformly through the spraying plate 13, and finally reacts on the wafer surface in the reaction cavity 12 to deposit a thin film.

[0032] The application sets the mixing cavity 11 and the reaction cavity 12 in the cavity assembly 1, and sets the uniformity fan 21 in the mixing cavity 11, so that when the reaction gas flows into the mixing cavity 11, the reaction gas is accelerated and mixed by the uniformity fan 21, and the uniformity of the reaction gas mixing is improved, and then the reaction gas enters the reaction cavity 12 through the spray plate 13 to carry out film deposition, so that the uniformity of the film deposition is improved.

[0033] In an embodiment, referring to Figures 1 to 4 The spray device further comprises a connecting piece 3, the inside of the connecting piece 3 is provided with a first air channel 31, and the outside of the connecting piece 3 is provided with a through hole 32 penetrating to the first air channel 31, and the first air channel 31 communicates with the mixing cavity 11. Specifically, the spray device further comprises a connecting piece 3, the connecting piece 3 is used for fixing the uniformity fan 21 and is used for introducing the reaction gas to flow into the mixing cavity 11; the inside of the connecting piece 3 is provided with a first air channel 31, the first air channel 31 is used for flowing the reaction gas, and the first air channel 31 communicates with the mixing cavity 11, so that the reaction gas can flow from the first air channel 31 to the mixing cavity 11; meanwhile, one side of the connecting piece 3 is further provided with a through hole 32, the through hole 32 penetrates from the outer surface of the connecting piece 3 to the first air channel 31, so that the reaction gas can be introduced from the through hole 32 into the inside of the connecting piece 3 and flow along the first air channel 31 to the mixing cavity 11, thereby improving the structural stability of the spray device and ensuring the flow direction of the reaction gas.

[0034] More specifically, the connecting piece 3 is a magnetic fluid sealing adapter, which is an adapter that realizes sealing effect by using magnetic fluid. The magnetic fluid sealing adapter is located above the upper cover plate 14, can realize zero leakage sealing of fluid medium, and completely avoids contact friction between solids. Therefore, the magnetic fluid sealing adapter has a long service life and low power consumption, thereby improving the service life of the spray device and reducing maintenance cost.

[0035] In a specific embodiment, referring to Figures 1 to 4As shown, the spraying device further comprises a sealing member 4, two ends of the sealing member 4 are connected with the connecting member 3 and the cavity assembly 1 respectively, and the sealing member 4 is internally provided with an air inlet channel 41 penetrating through the two ends thereof, and the air inlet channel 41 is in communication with the first air duct 31 and the mixing cavity 11. Specifically, the spraying device further comprises a sealing member 4, which is used to seal the communication position of the first air duct 31 and the mixing cavity 11 to avoid the leakage of reaction gas; the sealing member 4 is arranged between the connecting member 3 and the cavity assembly 1, and the connecting member 3 and the cavity assembly 1 are respectively located at two ends of the sealing member 4, and the three are tightly connected to improve the structural stability of the spraying device; the inside of the sealing member 4 is further provided with an air inlet channel 41, the air inlet channel 41 penetrates through the two ends of the sealing member 4, and one end of the air inlet channel 41 is connected with the through hole 141, so that the air inlet channel 41 is in communication with the first air duct 31 and the mixing cavity 11, so that the reaction gas flows to the air inlet channel 41 after entering the first air duct 31, and finally flows to the mixing cavity 11 through the through hole 141, thereby reducing the leakage probability of the reaction gas and improving the safety of the spraying device.

[0036] Particularly, the connecting member 3 is located above the upper cover plate 14, the sealing member 4 is located at the top end of the upper cover plate 14, and the connecting member 3 is located at the top end of the sealing member 4, so that the reaction gas flows from the connecting member 3 to the air inlet channel 41 from top to bottom after entering the first air duct 31, and flows to the mixing cavity 11 from top to bottom, thereby improving the flow rate of the reaction gas.

[0037] In an embodiment, with reference to Figures 1 to 4As shown, the fan assembly 2 further comprises a motor 22 and a shaft coupling 23, two ends of the shaft coupling 23 are fixedly connected with the motor 22 and the connecting piece 3 respectively, and one end of the uniform gas fan 21 is connected with the shaft coupling 23; wherein, the motor 22 is started to drive the shaft coupling 23 to rotate the uniform gas fan 21. Specifically, one end of the fan assembly 2 is located above the connecting piece 3, and the other end is located in the mixing cavity 11. The fan assembly 2 comprises the uniform gas fan 21, the motor 22 and the shaft coupling 23. The motor 22 serves as a power source for driving the uniform gas fan 21 to rotate. The shaft coupling 23 is a device for coupling two shafts or a shaft and a rotating part, which rotates together during the transmission of motion and power, and does not separate under normal circumstances. Two ends of the shaft coupling 23 are fixedly connected with the motor 22 and the connecting piece 3 respectively. The shaft coupling 23 is fixedly arranged at the top end of the connecting piece 3. The top end of the shaft coupling 23 is fixedly arranged with the motor 22. One end of the uniform gas fan 21 is connected with the shaft coupling 23, and the other end passes through the connecting piece 3 and the through hole 141 to the mixing cavity 11. Therefore, the motor 22, the shaft coupling 23 and the uniform gas fan 21 are fixed. The motor 22 is started to drive the shaft coupling 23 to rotate. Under the action of the shaft coupling 23, the uniform gas fan 21 rotates and fully mixes the gas in the reaction cavity 12 flowing into the mixing cavity 11. When the motor 22 is started, the shaft coupling 23 is driven to rotate, so that the uniform gas fan 21 rotates, thereby mixing the reaction gas entering the mixing cavity 11.

[0038] The fan assembly 2 has a simple structure, and the motor 22 and the uniform gas fan 21 are connected through the shaft coupling 23, thereby improving the structural stability of the uniform gas fan 21, so that the uniform gas fan 21 can rotate more stably in the mixing cavity 11.

[0039] In specific embodiments, with reference to Figures 1 to 4As shown, the uniform gas fan 21 comprises a rotating shaft 211 and a plurality of fan blades 212, one end of the rotating shaft 211 is connected with the coupling 23, the other end of the rotating shaft 211 extends into the mixing cavity 11, and the plurality of fan blades 212 are fixedly arranged on the other end of the rotating shaft 211 in a circumferential direction of the rotating shaft 211. Specifically, the uniform gas fan 21 comprises a rotating shaft 211 and a plurality of fan blades 212, the rotating shaft 211 is used to rotate under the action of the coupling 23, thereby driving the plurality of fan blades 212 to rotate, one end of the rotating shaft 211 is connected with the coupling 23, the other end of the rotating shaft 211 extends towards the mixing cavity 11, sequentially passes through the first gas channel 31, the gas inlet channel 41 and the through hole 141 and enters the mixing cavity 11, the plurality of fan blades 212 are fixedly arranged on the other end of the rotating shaft 211, so that the fan blades 212 are located in the mixing cavity 11, the plurality of fan blades 212 are arranged in a circumferential direction of the rotating shaft 211, so as to better and more uniformly mix the reaction gas flowing into the mixing cavity 11. The uniform gas fan 21 has simple structure and high stability.

[0040] More specifically, the plurality of fan blades 212 are located at the top of the mixing cavity 11, that is, the uniform gas fan 21 rotates at the top of the mixing cavity 11 to directly mix the reaction gas just entering the mixing cavity 11, thereby improving the uniformity of the mixed reaction gas and ensuring the mixing of all reaction gas flowing into the mixing cavity 11.

[0041] Exemplarily, the uniform gas fan 21 at the top of the mixing cavity 11 has six fan blades 212, the fan blades 212 have a ring structure, the outer diameter of the uniform gas fan 21 is 125 mm, the hub diameter of the uniform gas fan 21 is 30 mm, the thickness of the fan blades 212 of the uniform gas fan 21 is 3 mm, and the rotating speed of the uniform gas fan 21 is 1000 r / min.

[0042] In an embodiment, with reference to Figures 1 to 4As shown, the cavity assembly 1 comprises an upper cover plate 14, the bottom end of the upper cover plate 14 is upwardly recessed to form the mixing cavity 11, and the bottom end of the upper cover plate 14 abuts against the shower plate 13. Specifically, the cavity assembly 1 comprises an upper cover plate 14 connected with the fan assembly 2, the inside of the upper cover plate 14 forms the mixing cavity 11, the mixing cavity 11 is upwardly recessed by the bottom end of the upper cover plate 14, and the bottom end of the upper cover plate 14 abuts against the shower plate 13, the shower plate 13 is located at the bottom end of the mixing cavity 11, and the shower plate 13 is isolated between the mixing cavity 11 and the reaction cavity 12, the mixing cavity 11 and the reaction cavity 12 are communicated through the shower holes on the shower plate 13, the structure of the upper cover plate 14 is stable, and the installation is simple; the mixing cavity 11 is integrally formed by the upper cover plate 14, so that the sealing performance of the mixing cavity 11 is high, and the structure is more stable.

[0043] In specific embodiments, referring to Figures 1 to 2 As shown, the mixing cavity 11 is a conical structure, and the via hole 141 is located at the vertex of the mixing cavity 11. Specifically, the mixing cavity 11 is arranged as a conical structure, and the mixing cavity 11 is gradually narrowed upwardly from the bottom end of the upper cover plate 14, the vertex of the mixing cavity 11 is located at the center of the upper surface of the upper cover plate 14, the mixing cavity 11 is a symmetrical structure to improve the structural stability of the mixing cavity 11; and the via hole 141 is arranged at the vertex of the mixing cavity 11, that is, the via hole 141 is located at the center of the upper surface of the upper cover plate 14 and penetrates through both ends of the upper surface of the upper cover plate 14, so that the reaction gas of the external air passage can enter the mixing cavity 11 through the via hole 141, and because the mixing cavity 11 is a conical structure, the flow rate of the reaction gas is large when it just enters the mixing cavity 11, and after being fully mixed in the mixing cavity 11, the reaction gas flows to the bottom end of the mixing cavity 11 at a slower flow rate, so that the reaction gas more fully and uniformly passes through the shower plate 13 to the reaction cavity 12, to improve the uniformity of wafer film distribution and improve product production quality.

[0044] In an embodiment, referring to Figures 1 to 2As shown, the cavity assembly 1 further comprises an outer ring 15 sleeved on the periphery of the shower plate 13, and the outer ring 15 forms a reaction cavity 12 below the shower plate 13, and the outer ring 15 is provided with a second gas passage 151 penetrating through the outer surface of the outer ring 15 and the reaction cavity 12, and the second gas passage 151 is used for introducing other reaction gas into the reaction cavity 12. Specifically, the cavity assembly 1 further comprises an outer ring 15 located on the periphery of the shower plate 13, and the shower plate 13 is embedded in the top end of the outer ring 15 along the circumference of the outer ring 15, and the upper end surface of the outer ring 15 is fixedly connected with the bottom end of the upper cover plate 14, so as to improve the structural stability of the cavity assembly 1; the reaction cavity 12 is formed inside the outer ring 15 and below the shower plate 13, so that a certain gap is formed between the shower plate 13 and the reaction cavity 12, which can not only ensure the smooth flow of reaction gas, but also effectively prevent external impurities from entering the reaction cavity 12, thereby ensuring the purity and quality of the film deposition process, and meanwhile, the outer ring 15 is closely matched with the shower plate 13 and the reaction cavity 12, thereby ensuring the uniform distribution and stable flow of the reaction gas; the mixing cavity 11 is located above the shower plate 13, and the reaction cavity 12 is located below the shower plate 13, so that the reaction gas entering the mixing cavity 11 is uniformly and stably delivered to the reaction cavity 12 through the shower plate 13. The cavity assembly 1 has simple structure and high stability.

[0045] The second gas passage 151 is further provided on the outer ring 15, and the second gas passage 151 extends from the outer surface of the outer ring 15 towards the inside of the outer ring 15 until it penetrates into the reaction cavity 12, and the second gas passage 151 is located below the shower plate 13; other reaction gas is introduced into the second gas passage 151, so that the other reaction gas flows into the reaction cavity 12 along the second gas passage 151.

[0046] When the shower device is started, multiple reaction gases are introduced into the first gas passage 31, and the multiple reaction gases enter the mixing cavity 11 through the gas inlet channel 41 and the via 141, and then enter the reaction cavity 12 after being fully mixed under the action of the uniform gas fan 21; at the same time, other reaction gas is introduced into the second gas passage 151, and the other reaction gas enters the reaction cavity 12 after flowing through the second gas passage 151, and reacts with the multiple reaction gases introduced by the first gas passage 31 in the reaction cavity 12, and finally deposits a film on the wafer surface.

[0047] The embodiment avoids the reaction of the multiple reaction gases in advance, and thus affects the film forming quality. Since the wafer is placed in the reaction cavity 12, the multiple reaction gases react near the wafer and form a film, thereby improving the film forming quality. Meanwhile, the uniformity of the mixture of the multiple reaction gases is improved under the action of the uniform gas fan 21.

[0048] In specific embodiments, referring to Figures 1 to 2 The cavity assembly 1 further comprises a cleaning ring 16 fixedly connected to the bottom end of the outer ring 15. The cleaning ring 16 and the inner part of the outer ring 15 form the reaction cavity 12. The cleaning ring 16 is provided with a third gas channel 161 penetrating through the outer surface of the cleaning ring 16 and the reaction cavity 12, and the third gas channel 161 is used for introducing another reaction gas into the reaction cavity 12. Specifically, the cleaning ring 16 is a ring-shaped structure for cleaning and sealing, and is usually located around the shower plate 13. The cleaning ring 16 forms a gap with the shower plate 13 and the reaction cavity 12. The gap can ensure smooth flow of the reaction gas and effectively prevent external impurities from entering the reaction cavity 12, thereby ensuring the purity and quality of the film deposition process. The outer ring 15 closely cooperates with the shower plate 13 and the reaction cavity 12, thereby ensuring uniform distribution and stable flow of the reaction gas, and greatly improving the deposition quality and uniformity of the film. In addition, the cleaning ring 16 is easy to disassemble and clean, thereby facilitating the user to regularly maintain and maintain the equipment, and prolonging the service life of the equipment.

[0049] The cleaning ring 16 is fixedly connected to the bottom end of the outer ring 15, i.e., the cleaning ring 16 is located below the outer ring 15, and the cleaning ring 16 and the outer ring 15 form the reaction cavity 12 together. The wafer can be located in the reaction cavity 12, and the multiple reaction gases react in the reaction cavity 12 to deposit a film on the wafer surface. The cleaning ring 16 is provided with a third gas channel 161 extending from the outer surface of the cleaning ring 16 to the inside of the cleaning ring 16 and penetrating into the reaction cavity 12. Another reaction gas is introduced into the third gas channel 161, so that the other reaction gas flows into the reaction cavity 12 along the third gas channel 161.

[0050] When the spraying device is started, multiple reaction gases are introduced into the first gas passage 31, and the multiple reaction gases enter the mixing cavity 11 through the gas inlet passage 41 and the via hole 141, and after being fully mixed under the action of the uniform gas fan 21, enter the reaction cavity 12; at the same time, other reaction gases are introduced into the second gas passage 151, and after flowing through the second gas passage 151, enter the reaction cavity 12, and react with the multiple reaction gases introduced from the first gas passage 31 in the reaction cavity 12; at the same time, another reaction gas is introduced into the third gas passage 161, and the reaction gas enters the reaction cavity 12 through the third gas passage 161, and finally the reaction gases introduced from the first gas passage 31, the reaction gases introduced from the second gas passage 151 and the reaction gases introduced from the third gas passage 161 fully react in the reaction cavity 12, and finally deposit a thin film on the wafer surface.

[0051] The embodiment introduces different reaction gases from different gas passages to avoid the reaction of multiple reaction gases in advance, thereby affecting the film forming quality, and since the wafer is placed in the reaction cavity 12, the multiple reaction gases react near the wafer and form a film, thereby improving the film forming quality. At the same time, under the action of the uniform gas fan 21, the uniformity of the mixture of the multiple reaction gases is also improved.

[0052] The embodiment also provides a thin film deposition device (not shown in the figure), which comprises a spraying device, and the spraying device can adopt any one of the spraying devices provided by the application. Since the specific structure and working principle of the spraying device have been described in detail in the foregoing description, for the sake of brevity of the description, they will not be described here.

[0053] The thin film deposition device in the embodiment has high uniformity of the mixture of the reaction gases of the spraying device provided by the application, so that the thin film deposition device has high uniformity of the thin film deposited on the wafer surface, thereby improving the product quality.

[0054] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art can easily think of various equivalent modifications or replacements within the technical range disclosed by the present application, and these modifications or replacements should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A spraying device, characterized in that, include: The cavity assembly has an internally interconnected mixing chamber and a reaction chamber, with a spray plate between the mixing chamber and the reaction chamber, and a through hole to connect the mixing chamber and an external air passage. A fan assembly, including an air distribution fan located within the mixing chamber; When multiple reaction gases enter the mixing chamber through the through-hole from the external air passage, they are mixed by the uniform air fan and then flow through the spray plate and into the reaction chamber.

2. The spraying device according to claim 1, characterized in that, The spraying device also includes a connector, the connector having a first air passage inside and a through hole on the outside of the connector extending to the first air passage, the first air passage being connected to the mixing chamber.

3. The spraying device according to claim 2, characterized in that, The spraying device also includes a sealing element, the two ends of which are respectively connected to the connecting element and the cavity assembly. The sealing element has an air intake channel that passes through both ends of it, and the air intake channel connects the first air passage and the mixing chamber.

4. The spraying device according to claim 2, characterized in that, The fan assembly also includes a motor and a coupling. The two ends of the coupling are fixedly connected to the motor and the connecting member, respectively. One end of the air distribution fan is connected to the coupling. When the motor is started, it drives the coupling to rotate the air distribution fan.

5. The spraying device according to claim 4, characterized in that, The air distribution fan includes a rotating shaft and multiple fan blades. One end of the rotating shaft is connected to the coupling, and the other end extends into the mixing chamber. The multiple fan blades are fixed at intervals along the circumference of the rotating shaft at the other end of the rotating shaft.

6. The spraying device according to claim 1, characterized in that, The cavity assembly includes an upper cover plate, the bottom end of which is recessed upward to form the mixing cavity, and the bottom end of the upper cover plate abuts against the spray plate.

7. The spraying device according to claim 6, characterized in that, The mixing cavity has a conical structure, and the through hole is located at the apex of the mixing cavity.

8. The spraying device according to claim 6, characterized in that, The cavity assembly also includes an outer ring, which is sleeved around the spray plate and forms a reaction chamber below the spray plate. The outer ring is provided with a second air passage that penetrates its outer surface and the reaction chamber, and the second air passage is used to introduce other reaction gases into the reaction chamber.

9. The spraying device according to claim 8, characterized in that, The cavity assembly also includes a cleaning ring, which is fixedly connected to the bottom end of the outer ring. The cleaning ring and the interior of the outer ring form the reaction cavity. The cleaning ring is provided with a third gas passage that penetrates its outer surface and the reaction cavity. The third gas passage is used to introduce another reaction gas into the reaction cavity.

10. A thin film deposition apparatus, characterized in that, Includes the spraying device according to any one of claims 1-9.

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