Diamond wire bus and diamond wire

Abstract

The utility model provides a diamond wire bus and a diamond wire. The diamond wire bus comprises a base body and a coating layer covering at least part of the surface of the base body, the coating layer comprises a first metal layer, and the first metal layer covers at least part of the surface of the base body; the second metal layer covers at least part of the surface of the first metal layer; and the third metal layer covers at least part of the surface of the second metal layer. According to the diamond wire bus, the third metal layer is in direct contact with the mold in the cold drawing deformation process and used for protecting the base body, the first metal layer is in direct contact with the base body and used for being combined with the base body, and the second metal layer is located between the first metal layer and the third metal layer and can serve as a buffer coordination layer; the coating layer formed by combining the three metal layers can reduce the wire fracture rate of the diamond wire bus in the cold drawing deformation process, and the finished product diameter with good consistency is obtained.

Description

Technical Field

[0001] This application belongs to the field of diamond wire technology, specifically relating to diamond wire busbars and diamond wire. Background Technology

[0002] Diamond wire cutting technology, with its advantages of high yield, high cutting efficiency, low material loss, and low environmental pollution, is gradually replacing traditional internal circular saws and slurry cutting techniques in the cutting of hard and brittle materials such as semiconductor silicon wafers and sapphire, becoming the mainstream cutting process. Compared to diamond wire with high-carbon steel wire as the core, diamond wire with tungsten wire as the core avoids problems such as wire breakage due to excessive temperature during cutting due to the extremely high melting point of tungsten wire, while also greatly improving strength.

[0003] However, due to the high strength of tungsten wire, the tungsten wire manufacturing process is usually carried out at high temperatures. Temperature fluctuations greatly affect the quality stability and production efficiency of tungsten wire. On the other hand, cold drawing and deforming tungsten wire at room temperature will result in a high wire breakage rate during the drawing process.

[0004] How to design a diamond wire busbar with tungsten wire as the core and the diamond wire itself, so that it can have a good yield in the cold drawing process, is a technical problem that needs to be solved. Utility Model Content

[0005] This application provides a diamond wire busbar and diamond wire, aiming to solve the problem of high wire breakage rate in the cold drawing process of existing tungsten wire diamond wire busbars.

[0006] The first embodiment of this application provides a diamond wire busbar, including a substrate and a covering layer covering at least a portion of the surface of the substrate, the covering layer comprising:

[0007] A first metal layer is disposed on at least a portion of the surface of the substrate;

[0008] A second metal layer is disposed on at least a portion of the surface of the first metal layer;

[0009] A third metal layer is disposed on at least a portion of the surface of the second metal layer.

[0010] In some embodiments, the second metal layer is a copper layer.

[0011] In some embodiments, the third metal layer is any one of a copper-zinc alloy layer, a copper-tin alloy layer, a copper-zinc-tin alloy layer, and a copper-zinc-nickel alloy layer.

[0012] In some embodiments, the first metal layer is a nickel layer, or the first metal layer is a nickel-cobalt alloy layer.

[0013] In some embodiments, the substrate is a tungsten wire or a tungsten alloy wire.

[0014] In some embodiments, along the radial direction of the diamond wire generatrix, the substrate has a maximum dimension Dμm, the first metal layer has a first dimension L1μm, the second metal layer has a second dimension L2μm, and the third metal layer has a third dimension L3μm, satisfying:

[0015] D = a·(L1+L2+L3);

[0016] Where 'a' is the first thickness coefficient, satisfying 30≤a≤100.

[0017] In some embodiments, the first size L1μm and the second size L2μm satisfy:

[0018] L2 = b·L1;

[0019] Where b is the second thickness coefficient, satisfying 5≤b≤15.

[0020] In some embodiments, the second dimension L2μm and the third dimension L3μm satisfy:

[0021] L2 = c·L3;

[0022] Where c is the third thickness coefficient, satisfying 2≤c≤8.

[0023] In some embodiments, the maximum size Dμm satisfies: 50≤D≤100.

[0024] In some embodiments, the first dimension L1μm satisfies: 0.02≤L1≤0.25.

[0025] In some embodiments, the second dimension L2μm satisfies: 0.2≤L2≤1.5.

[0026] In some embodiments, the third dimension L3μm satisfies: 0.1≤L3≤0.6.

[0027] The second embodiment of this application provides a diamond wire, including a diamond wire main body, a polishing layer, and a first particle as described in any of the above embodiments. The polishing layer covers at least a portion of the surface of the diamond wire main body, and the first particle is dispersed in the polishing layer, with at least a portion of the first particle protruding from the polishing layer.

[0028] In some embodiments, a second particle is dispersed within the grinding layer; the average particle size of the second particle is 10 μm to 100 μm.

[0029] In some embodiments, the thickness of the wear layer is 0.1 μm to 100 μm.

[0030] In some embodiments, the average particle size of the first particle is 2 μm to 10 μm.

[0031] In some embodiments, a fourth metal layer is disposed between the diamond wire busbar and the grinding layer; the fourth metal layer is a nickel layer.

[0032] This application provides a diamond wire busbar, comprising a substrate and a cladding layer covering at least a portion of the surface of the substrate. The cladding layer includes: a first metal layer covering at least a portion of the surface of the substrate; a second metal layer covering at least a portion of the surface of the first metal layer; and a third metal layer covering at least a portion of the surface of the second metal layer. In the diamond wire busbar provided by this application, the third metal layer directly contacts the die during the cold drawing deformation process, serving to protect the substrate. The first metal layer directly contacts the substrate, serving to bond with the substrate. The second metal layer is located between the first and third metal layers, acting as a buffer and coordinating layer. During the cold drawing deformation process of the diamond wire busbar, it lubricates and coordinates the deformation of the substrate. The cladding layer formed by the combination of the three metal layers can reduce the wire breakage rate of the diamond wire busbar during the cold drawing deformation process and obtain a finished product diameter with better consistency, thereby improving the cutting yield in subsequent processes. Attached Figure Description

[0033] The technical solution and other beneficial effects of this application will become apparent from the following detailed description of specific embodiments in conjunction with the accompanying drawings.

[0034] Figure 1 This is a schematic diagram of the main cross-sectional structure of a diamond wire busbar provided in an embodiment of this application;

[0035] Figure 2 for Figure 1 A side view cross-sectional structural diagram of the medium-diameter diamond wire busbar;

[0036] Figure 3 This is a schematic diagram of the front cross-sectional structure of a diamond wire provided in an embodiment of this application;

[0037] Figure 4 for Figure 3 A side view cross-sectional diagram of the structure of the diamond wire.

[0038] Figure label:

[0039] 100-Substrate, 200-Covering layer, 201-First metal layer, 202-Second metal layer, 203-Third metal layer, 300-Abrasive layer, 301-First particle, 302-Second particle, 400-Fourth metal layer. Detailed Implementation

[0040] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0041] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows for mutual communication; they can refer to a direct connection, an indirect connection through an intermediate medium, or an indirect connection through a pipe or conduit; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances. In the description of this application, "multiple" means two or more, unless otherwise expressly and specifically limited. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more features.

[0042] See Figure 1 and Figure 2 The first embodiment of this application provides a diamond wire busbar, including a substrate 100 and a cladding layer 200 covering at least a portion of the surface of the substrate 100. The cladding layer 200 includes:

[0043] A first metal layer 201 is disposed on at least a portion of the surface of the substrate 100;

[0044] The second metal layer 202 is disposed on at least a portion of the surface of the first metal layer 201;

[0045] A third metal layer 203 is disposed on at least a portion of the surface of the second metal layer 202.

[0046] Traditional hot-drawn tungsten wire suffers from poorer diameter uniformity compared to cold-drawn steel wire due to temperature fluctuations. Cold drawing of tungsten wire effectively solves this problem. However, the differences in microstructure and properties between tungsten wire and carbon steel necessitate a redesign of the structure of diamond wire and its parent wire to adapt to room temperature drawing environments. In the diamond wire parent wire provided in this embodiment, the first metal layer 201 contacts the tungsten wire serving as the substrate 100, improving the bonding force between the second metal layer 202 and the substrate 100. The third metal layer 203, located on the outermost side of the coating layer 200, has a high surface hardness and directly contacts the die during the cold drawing process. It provides lubrication while maintaining sufficient strength to prevent detachment, allowing for continuous drawing of the diamond wire or diamond wire parent wire. The second metal layer 202, located between the first metal layer 201 and the third metal layer 203, acts as a buffer and coordinating layer, lubricating and coordinating substrate deformation during the cold drawing process of the diamond wire parent wire. The three-layer metal cladding 200 can reduce the wire breakage rate of diamond wire in the cold drawing process and obtain a finished diameter with better consistency. It can effectively increase the finished diamond wire coil diameter, and the stability of the coil diameter can reduce the stress concentration of diamond wire during the cutting process, thereby reducing the wire breakage rate and improving the silicon wafer yield.

[0047] In some embodiments, the second metal layer 202 is a copper layer. The copper layer has good ductility and can play a role in lubricating and coordinating the deformation of the substrate in the subsequent cold drawing deformation process.

[0048] In some embodiments, the third metal layer 203 is any one of a copper-zinc alloy layer, a copper-tin alloy layer, a copper-zinc-tin alloy layer, and a copper-zinc-nickel alloy layer. Any of these alloy layers possesses good hardness and can provide good protection for the substrate 100, the first metal layer 201, and the second metal layer 202.

[0049] In some embodiments, the substrate 100 is a tungsten wire or a tungsten alloy wire.

[0050] In some embodiments, the first metal layer 201 is a nickel layer, or a nickel-cobalt alloy layer. Both the nickel layer and the nickel-cobalt alloy have good adhesion to tungsten and copper. When the first metal layer 201 is disposed between the substrate 100 and the second metal layer 202, the adhesion between the second metal layer 202 and the substrate 100 can be effectively improved, avoiding the problem of the cladding layer 200 falling off during the cold drawing deformation process of the diamond wire busbar.

[0051] See Figures 1-2In some embodiments, along the radial direction of the diamond wire generatrix (i.e., the first direction X), the substrate 100 has a maximum dimension Dμm, the first metal layer 201 has a first dimension L1μm, the second metal layer 202 has a second dimension L2μm, and the third metal layer 203 has a third dimension L3μm, satisfying:

[0052] D = a·(L1+L2+L3);

[0053] Where 'a' is the first thickness coefficient, representing the ratio of the maximum radial dimension of the substrate 100 to the sum of the radial thicknesses of the first metal layer 201, the second metal layer 202, and the third metal layer 203, satisfying 30≤a≤100.

[0054] It is understandable that the value of the first thickness coefficient 'a' can be any value among 30, 40, 50, 60, 70, 80, 90, and 100, or a range between any two values. Since the strength of the tungsten wire forming the substrate 100 is much higher than that of the cladding layer 200, the smaller the thickness of the cladding layer 200, the better it is for improving the strength of the diamond wire matrix, and ultimately the cutting force of the diamond wire can be improved, provided that the drawing effect is met. However, if the thickness of the cladding layer 200 is too small, it will be detrimental to the cold deformation of the substrate 100. This is because a thicker tungsten wire is used for hot drawing under traditional processes when preparing the substrate 100, so the uniformity of the diameter of the substrate 100 is not ideal. At the same time, due to the high strength of the tungsten wire, the diameter difference at different positions along the axial direction of the substrate 100 will directly lead to the difference in deformation resistance during the subsequent cold drawing process. This is very unfavorable for the die to apply uniform deformation to the diamond wire matrix. Therefore, a cladding layer 200 of a certain thickness, especially the second metal layer 202, can coordinate the deformation of the substrate 100 during the cold drawing process, making it more uniform, and ultimately obtaining a diamond wire matrix with better uniformity. When the first thickness coefficient a, i.e. the ratio of the substrate 100 to the cladding layer 200, meets the above-mentioned value range, it can ensure that the diamond wire busbar has ideal strength while also ensuring that it has good diameter consistency after the cold drawing process.

[0055] Based on the above embodiments, the first thickness coefficient 'a' is further preferably 40 ≤ a ≤ 90. It is understood that the value of the first thickness coefficient 'a' can be any value among 40, 50, 60, 70, 80, and 90, or a range between any two values. When the value of the first thickness coefficient 'a' satisfies the above range, the overall performance of the diamond wire busbar's strength and cold-drawing consistency can be further improved.

[0056] In some embodiments, the first dimension L1μm and the second dimension L2μm satisfy:

[0057] L2 = b·L1;

[0058] Where b is the second thickness coefficient, representing the ratio of the second dimension L2 to the first dimension L1, satisfying 5≤b≤15.

[0059] It is understandable that the value of the second thickness coefficient b can be any value among 5, 7, 9, 11, 13, and 15, or any range between two values. When the second thickness coefficient b, i.e., the ratio of the second dimension L2 to the first dimension L1, satisfies the above-mentioned value range, the diamond wire mainframe can have good ductility and, at the same time, have relatively ideal overall strength.

[0060] In some embodiments, the second dimension L2μm and the third dimension L3μm satisfy:

[0061] L2 = c·L3;

[0062] Where c is the third thickness coefficient, representing the ratio of the second dimension L2 to the third dimension L3, satisfying 2≤c≤8.

[0063] It is understandable that the value of the third thickness coefficient c can be any value from 2, 3, 4, 5, 6, 7, 8, or any range between two values. When the third thickness coefficient c, i.e., the ratio of the second dimension L2 to the third dimension L3, satisfies the above value range, it can ensure that the outer surface of the diamond wire busbar has ideal hardness, while the overall strength is relatively ideal.

[0064] In some embodiments, the maximum size Dμm satisfies: 50≤D≤100, and more preferably 60≤D≤90.

[0065] Generally, the diamond wire parent wire and the radial cross-section of the diamond wire can be circular or elliptical, preferably circular. See also Figure 1 When the radial section of the substrate 100 is circular, its maximum dimension D is the diameter of the radial section of the substrate 100. It can be understood that the unit of the maximum dimension D, μm, can be any value of 50, 60, 70, 80, 90, 100 or a range between any two values.

[0066] In some embodiments, the first dimension L1μm satisfies: 0.02≤L1≤0.25, and more preferably 0.05≤L1≤0.15.

[0067] It is understandable that the value of the first dimension L1 (unit: μm) can be any value or a range between any two of 0.02, 0.05, 0.10, 0.15, 0.20, and 0.25.

[0068] In some embodiments, the second dimension L2μm satisfies: 0.2≤L2≤1.5, and more preferably 0.4≤L2≤0.7.

[0069] It is understandable that the value of the second dimension L2 (unit: μm) can be any value or a range between any two values ​​from 0.2, 0.4, 0.6, 0.7, 0.9, 1.1, 1.3, 1.5.

[0070] In some embodiments, the third dimension L3μm satisfies: 0.1≤L3≤0.6, and more preferably 0.3≤L3≤0.6.

[0071] It is understandable that the value of the third dimension L3 (unit: μm) can be any value among 0.1, 0.2, 0.3, 0.4, 0.5, and 0.6, or a range between any two values.

[0072] When the maximum dimension D of the base 100 and the first dimension L1, the second dimension L2, and the third dimension L3 meet the above value range, it can ensure that the diamond wire busbar achieves a balance in terms of overall strength and cold drawing coordination.

[0073] The second embodiment of this application provides a diamond wire, see [link]. Figure 3 and Figure 4 The first particle 301 includes the diamond wire busbar and the grinding layer 300 and the first particle 301 in any of the above embodiments. The grinding layer 300 covers at least a portion of the surface of the diamond wire busbar, and the first particle 301 is dispersed in the grinding layer 300. At least a portion of the first particle 301 protrudes from the grinding layer 300 and is used to assist the grinding layer 300 in cutting silicon wafers and the like in the subsequent cutting process.

[0074] In some embodiments, the grinding layer 300 contains a second particle 302; the average particle size of the second particle 302 is 10 μm to 100 μm.

[0075] It is understood that the average particle size (unit: μm) of the second particle 302 can be any value or a range between any two of 10, 20, 40, 60, 80, and 100. When the average particle size of the second particle 302 meets the above-mentioned range, the second particle 302 can be uniformly dispersed in the grinding layer 300, increasing the hardness of the grinding layer 300 while increasing the bonding ability between the grinding layer 300 and the diamond wire or the fourth metal layer 400, thereby increasing the service life and cutting efficiency of the diamond wire.

[0076] In some embodiments, the thickness of the wear layer 300 is 0.1 μm to 100 μm.

[0077] It is understandable that the thickness of the grinding layer 300 (unit: μm) can be any value or a range between any two of 0.1, 1, 5, 10, 20, 50, 80, and 100. When the thickness of the grinding layer 300 meets the above range, it avoids the problem that if the thickness of the grinding layer 300 is too low, its consolidation effect on the first particle 301 will be weakened, resulting in a high shedding rate of the first particle 301 during diamond wire cutting and a decrease in cutting ability. At the same time, if the thickness of the grinding layer 300 is too high, it will lead to a low grinding yield of the first particle 301, reducing the cutting ability of the diamond wire.

[0078] In some embodiments, the average particle size of the first particle 301 is 2 μm to 10 μm.

[0079] The first particle 301 has an irregular shape. It can be understood that the average particle size of the first particle 301 (unit: μm) can be any value of 2, 3, 4, 5, 6, 7, 8, 9, 10 or a range between any two values.

[0080] See Figure 3 and Figure 4 In some embodiments, a fourth metal layer 400 is provided between the diamond wire busbar and the grinding layer 300 to further enhance the bonding force between the diamond wire busbar and the grinding layer 300; the fourth metal layer 400 is a nickel layer, and it is understood that the nickel layer includes pure nickel and nickel alloys containing a small amount of cobalt or iron.

[0081] It is understood that the tungsten wire mentioned in this application is a metal wire with a tungsten mass content of ≥95%, the copper layer is a metal wire with a copper mass content of ≥95%, and the nickel layer is a metal wire with a nickel mass content of ≥95%. The raw materials for the alloy layers mentioned in this application, such as the copper-zinc alloy layer, copper-tin alloy layer, copper-zinc-tin alloy layer, copper-zinc-nickel alloy layer, nickel-cobalt alloy layer, and nickel-iron alloy layer, can all be obtained commercially or prepared by thermal diffusion. Taking the copper-zinc alloy layer as an example, preparing the copper-zinc alloy layer by thermal diffusion may include the following steps:

[0082] S1. Electroplating a zinc layer onto the surface of the copper layer;

[0083] S2. The above composite metal layer is heated to allow zinc to diffuse into the copper layer, resulting in a copper-zinc alloy layer.

[0084] The diamond wire busbar and diamond wire provided in this application are described below with reference to specific embodiments:

[0085] Example 1

[0086] This embodiment provides a diamond wire busbar; see [link / reference] Figure 1 and Figure 2It includes a substrate 100 and a coating layer 200 covering the surface of the substrate 100. Along the direction away from the substrate 100, the coating layer 200 includes a first metal layer 201, a second metal layer 202 and a third metal layer 203 stacked in sequence.

[0087] The substrate 100 is made of pure tungsten wire with a diameter of 60 μm; the first metal layer 201 is made of nickel with a thickness of 0.05 μm; the second metal layer 202 is made of pure copper with a thickness of 0.45 μm; and the third metal layer 203 is made of copper-zinc alloy with a thickness of 0.4 μm.

[0088] Based on the aforementioned diamond wire busbar, a fourth metal layer 400 and a polishing layer 300 are electroplated to form the diamond wire. See [link to documentation]. Figure 3 The fourth metal layer 400 covers the surface of the diamond wire mother wire, and the grinding layer 300 covers the surface of the fourth metal layer 400. The first particle 301 is distributed in the grinding layer 300, and the second particle is dispersed in the grinding layer 300.

[0089] Examples 2-18

[0090] The diamond wire busbar and diamond wire structure provided in Examples 2 to 18 are the same as those in Example 1, except that the dimensional parameters of the substrate 100 and the covering layer 200 are adjusted.

[0091] Comparative Examples 1-9

[0092] The diamond wire busbars and diamond wire structures provided in Comparative Examples 1 to 9 are consistent with those in Example 1, except that the dimensional parameters of the substrate 100 and the covering layer 200 are adjusted.

[0093] The values ​​of relevant parameters of the diamond wire busbar in Examples 1-18 and Comparative Examples 1-9 are shown in Table 1.

[0094] Table 1

[0095] D <![CDATA[L1]]> <![CDATA[L2]]> <![CDATA[L3]]> <![CDATA[D / (L1+L2+L3)]]> Example 1 60 0.05 0.45 0.4 66.67 Example 2 60 0.1 0.5 0.5 54.55 Example 3 60 0.15 0.6 0.55 46.15 Example 4 60 0.05 0.4 0.4 70.59 Example 5 60 0.1 0.55 0.5 52.17 Example 6 60 0.15 0.7 0.55 42.86 Example 7 60 0.05 0.4 0.3 80.00 Example 8 60 0.1 0.55 0.45 54.55 Example 9 60 0.15 0.7 0.6 41.38 Example 10 90 0.05 0.45 0.4 100.00 Example 11 90 0.06 0.55 0.35 93.75 Example 12 90 0.1 0.5 0.6 75.00 Example 13 70 0.1 0.55 0.45 63.64 Example 14 58 0.15 0.7 0.6 40.00 Example 15 60 0.06 0.4 0.3 78.95 Example 16 60 0.08 0.55 0.5 53.10 Example 17 60 0.13 0.7 0.6 41.96 Example 18 60 0.03 0.55 0.45 58.25 Comparative Example 1 60 0.3 0.55 0.45 46.15 Comparative Example 2 60 0.01 0.5 0.4 65.93 Comparative Example 3 60 0.1 0.15 0.4 92.31 Comparative Example 4 60 0.1 0.55 0.2 70.59 Comparative Example 5 60 0.1 0.55 0.8 41.38 Comparative Example 6 58 0.2 0.8 0.8 32.22 Comparative Example 7 90 0.05 0.3 0.3 138.46 Comparative Example 8 60 0.1 0.55 0.4 57.14 Comparative Example 9 60 0.1 0.55 0.4 57.14

[0096] The diamond wires in Examples 1-18 and Comparative Examples 1-9 were subjected to strength tests, and the test methods were as follows:

[0097] Wire breakage rate test: G12 size silicon wafers were cut with a cutting tension of 4.0N and cutting times of 100min and 120min respectively. The number of cuts was 200 for both. The wire breakage rates were compared.

[0098] Yield test: The appearance of the cut silicon wafers is used as the evaluation standard. When the appearance of the silicon wafers is normal, they are considered as qualified finished products.

[0099] The test results are shown in Table 2.

[0100] Table 2

[0101] Finished Product Rate Breakage rate Example 1 96.22％ 7.01％ Example 2 98.46％ 6.96％ Example 3 99.36％ 3.97％ Example 4 96.21％ 8.26％ Example 5 98.41％ 7.25％ Example 6 98.27％ 6.99％ Example 7 95.10％ 10.21％ Example 8 98.21％ 6.64％ Example 9 97.95％ 7.21％ Example 10 96.26％ 8.88％ Example 11 95.42％ 7.39％ Example 12 97.54％ 4.69％ Example 13 98.20％ 3.98％ Example 14 98.65％ 5.86％ Example 15 97.69％ 6.69％ Example 16 96.46％ 8.41％ Example 17 97.98％ 11.97％ Example 18 94.20％ 8.91％ Comparative Example 1 92.25％ 14.92％ Comparative Example 2 82.56％ 18.71％ Comparative Example 3 84.86％ 9.69％ Comparative Example 4 93.23％ 15.45％ Comparative Example 5 94.17％ 16.69％ Comparative Example 6 93.56％ 15.62％ Comparative Example 7 94.41％ 12.89％ Comparative Example 8 91.56％ 17.45％ Comparative Example 9 91.56％ 22.26％

[0102] As can be seen from Table 2, the diamond wire and diamond wire busbar obtained by using the solution provided in this application have good strength performance. At the same time, during the silicon wafer cutting process, due to the high uniformity of their diameter, the cut silicon wafers have a smooth appearance and the yield is significantly improved.

[0103] The diamond wire busbar and diamond wire provided in the embodiments of this application have been described in detail above. Specific examples have been used in this application to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the technical solutions and core ideas of this application. Those skilled in the art should understand that they can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A diamond wire busbar, characterized in that, Includes a substrate (100) and a covering layer (200) covering at least a portion of the surface of the substrate (100), the covering layer (200) comprising: A first metal layer (201) is disposed on at least a portion of the surface of the substrate (100); A second metal layer (202) is disposed on at least a portion of the surface of the first metal layer (201); A third metal layer (203) is disposed on at least a portion of the surface of the second metal layer (202).

2. The diamond wire busbar according to claim 1, characterized in that, The second metal layer (202) is a copper layer.

3. The diamond wire busbar according to claim 1, characterized in that, The third metal layer (203) is any one of a copper-zinc alloy layer, a copper-tin alloy layer, a copper-zinc-tin alloy layer, and a copper-zinc-nickel alloy layer.

4. The diamond wire busbar according to claim 1, characterized in that, The first metal layer (201) is a nickel layer, or the first metal layer (201) is a nickel-cobalt alloy layer; And / or, the substrate (100) is a tungsten wire or a tungsten alloy wire.

5. A diamond wire busbar according to claim 1, characterized in that, Along the radial direction of the diamond wire generatrix, the substrate (100) has a maximum dimension Dμm, the first metal layer (201) has a first dimension L1μm, the second metal layer (202) has a second dimension L2μm, and the third metal layer (203) has a third dimension L3μm, satisfying: D = a·(L1+L2+L3); Where 'a' is the first thickness coefficient, satisfying 30≤a≤100.

6. A diamond wire busbar according to claim 5, characterized in that, The first size L1μm and the second size L2μm satisfy: L2 = b·L1; Where b is the second thickness coefficient, satisfying 5≤b≤15.

7. A diamond wire busbar according to claim 5, characterized in that, The second dimension L2μm and the third dimension L3μm satisfy: L2 = c·L3; Where c is the third thickness coefficient, satisfying 2≤c≤8.

8. A diamond wire busbar according to claim 5, characterized in that, The maximum size Dμm satisfies: 50≤D≤100; and / or, The first dimension L1μm satisfies: 0.02≤L1≤0.25; and / or, The second dimension L2μm satisfies: 0.2≤L2≤1.5; and / or, The third dimension L3μm satisfies: 0.1≤L3≤0.

6.

9. A diamond wire, characterized in that, Includes a diamond wire main body, a polishing layer (300), and a first particle (301) as described in any one of claims 1 to 8, wherein the polishing layer (300) covers at least a portion of the surface of the diamond wire main body, the first particle (301) is dispersed in the polishing layer (300), and at least a portion of the first particle (301) protrudes from the polishing layer (300).

10. A diamond wire according to claim 9, characterized in that, The grinding layer (300) contains a second particle (302); the average particle size of the second particle (302) is 10 μm to 100 μm.

11. A diamond wire according to claim 9, characterized in that, The thickness of the wear layer (300) is 0.1 μm to 100 μm; and / or, The average particle size of the first particle (301) is 2 μm to 10 μm.

12. A diamond wire according to claim 9, characterized in that, A fourth metal layer (400) is provided between the diamond wire busbar and the grinding layer (300); the fourth metal layer (400) is a nickel layer.

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