Magnetron sputtering coating equipment of integrated measuring device

Abstract

The utility model discloses magnetron sputtering coating equipment integrated with a measuring device, which particularly relates to the technical field of thin film deposition and comprises a process main chamber, a sample introduction chamber, a vacuum transmission cavity, a front support frame, a rear support frame, a wafer conveying device, a stress measuring instrument, a film thickness measuring instrument and a control system, the process main chamber and the sample introduction chamber are fixedly mounted at the top of the front support frame, the process main chamber and the vacuum transmission chamber are fixedly mounted on two sides of the sample introduction chamber respectively, the stress measuring instrument, the film thickness measuring instrument and the control system are fixedly mounted on the inner wall of the rear support frame, and the wafer conveying device is fixedly mounted in the rear support frame. According to the equipment disclosed by the utility model, multi-target co-sputtering film formation and ion source auxiliary sputtering film formation of wafers of 8 inches and below can be realized; the automatic transmission of the wafer can be realized, the coating equipment and the measuring device are controlled through a preset system, and the stress measurement before and after film formation, the film thickness measurement and the calculation of the film stress are realized.

Description

Technical Field

[0001] This utility model relates to the field of thin film deposition technology, and more specifically, to a magnetron sputtering coating equipment with an integrated measuring device. Background Technology

[0002] Thin film deposition equipment is generally classified into physical vapor deposition (PVD) equipment and chemical vapor deposition (CVD) equipment. PVD is a technique that uses physical methods under vacuum conditions to vaporize materials into gaseous atoms, molecules, or ionization, and then deposits them on the substrate surface via plasma. As a highly efficient PVD technique, magnetron sputtering is widely used in semiconductor, microelectronics, aerospace, and solar energy industries due to its advantages of high speed, low temperature, and low damage.

[0003] In the process of thin film preparation, the thickness and uniformity of the film layer are important indicators for evaluating the quality of the film. Since the film layer usually generates a certain internal stress after the wafer is deposited on the surface, the internal stress of the film layer is also an important parameter for evaluating the stability and reliability of the film. Therefore, it is necessary to measure the thickness, uniformity and internal stress of the film layer.

[0004] Under existing equipment and technology conditions, the measurement of film thickness and uniformity, as well as the internal stress of the film, is usually carried out in different measuring devices or instruments. Moreover, magnetron sputtering coating equipment and related measuring devices or instruments are usually produced by different manufacturers. As a result, after the wafer is coated, it needs to be manually removed from the equipment and transferred to the measuring device or instrument for measurement. The measurement of the internal stress of the film needs to be performed before and after the wafer is coated, which is a relatively complicated operation.

[0005] However, in actual use, the wafers are inevitably contaminated by impurities in the non-vacuum state when they are taken out of the vacuum environment of the magnetron sputtering coating equipment, which seriously affects the yield of wafer coating. Therefore, a magnetron sputtering coating equipment with integrated measurement device is proposed as a further improvement. Utility Model Content

[0006] In order to overcome the above-mentioned defects of the prior art, the embodiments of this utility model provide a magnetron sputtering coating equipment with an integrated measuring device to solve the problems mentioned in the background art.

[0007] To achieve the above objectives, this utility model provides the following technical solution: a magnetron sputtering coating equipment with an integrated measuring device, the magnetron sputtering coating equipment comprising: a main process chamber, a sample loading chamber, a vacuum transfer chamber, a front support frame, a rear support frame, a wafer transfer device, a stress measuring instrument, a film thickness measuring instrument, and a control system.

[0008] The main process chamber and the sample inlet chamber are both fixedly installed on the top of the front support frame. The main process chamber and the vacuum transfer chamber are respectively fixedly installed on both sides of the sample inlet chamber. The vacuum transfer chamber is fixedly connected to the sample inlet chamber through a sealing ring. One end of the rear support frame is fixedly connected to the front support frame near the sample inlet chamber. The stress measuring instrument and the film thickness measuring instrument are both fixedly installed on the inner wall of the top of the rear support frame. The control system is fixedly installed on the inner wall of the bottom of the rear support frame. The wafer transfer device is fixedly installed inside the rear support frame, and one end of the wafer transfer device is close to the sample inlet chamber.

[0009] Furthermore, the main process chamber includes: a chamber shell, a vacuum gauge, a cathode, a first wafer carrier, an ion source, a carrier drive system, and a first transfer gate valve.

[0010] The vacuum gauge and the first transfer valve are fixedly installed on one side of the chamber housing, the ion source is fixedly installed on the other side of the chamber housing, several cathodes are fixedly installed on the top of the chamber housing, the carriage drive system is fixedly installed on the bottom of the chamber housing, the first wafer carriage is disposed inside the chamber housing, and a wafer is placed on the upper surface of the first wafer carriage.

[0011] Furthermore, the bracket drive system includes: a lifting block, a lifting drive motor, a bracket rotation shaft, and a rotation shaft drive motor.

[0012] The lifting drive motor used to drive the lifting block to move up and down is fixedly installed at the bottom of the chamber housing by a fixing bracket, and the lifting drive motor is connected to the lifting block in a transmission connection.

[0013] The rotary shaft drive motor for driving the first wafer carrier to rotate is fixedly installed at the bottom of the lifting block. The output shaft of the rotary shaft drive motor is fixedly connected to one end of the carrier rotation shaft through a coupling. The other end of the carrier rotation shaft, which passes through the cavity housing, is fixedly connected to the first wafer carrier. A wafer is placed on the upper surface of the first wafer carrier.

[0014] Furthermore, the sample injection chamber includes: a square chamber, a sealed door, a second wafer holder, a lifting guide rail, a lifting drive mechanism, and a second transfer gate valve.

[0015] The sealing door is sealed to the square cavity via a rubber ring. The lifting guide rail is fixedly installed on the inner wall of the top of the square cavity. The second wafer tray is mounted on the lifting guide rail. The lifting drive mechanism for driving the second wafer tray to rise and fall is mounted on the outer wall of the top of the square cavity. The second transmission slide valve is fixedly installed on the square cavity.

[0016] Furthermore, the second wafer carrier includes: a carrier base plate, a plurality of wafer trays, and a wafer transfer tray.

[0017] The wafer transfer tray is fixedly installed on the bottom side of the tray base plate, and several wafer trays are fixedly installed on the side of the tray base plate, all located above the wafer transfer tray.

[0018] Furthermore, the vacuum transmission cavity includes: an elongated chamber, a sealed top cover, a vacuum robotic arm, and a Notch positioning mechanism;

[0019] The sealing cover is fixedly installed on the top of the elongated chamber, the vacuum robotic arm is fixedly installed inside the elongated chamber, a vacuum wafer holder is fixedly installed at the end of the vacuum robotic arm, and the notch positioning mechanism is set on the elongated chamber and the sealing cover.

[0020] Furthermore, the notch positioning mechanism includes: a wafer turntable, a turntable rotation motor, a turntable lifting motor, a lifting slider, an upper sensor, and a lower sensor;

[0021] The upper and lower sensors are respectively fixed to the outer wall of the sealed upper cover and the bottom of the elongated chamber, and the wafer turntable is located inside the elongated chamber.

[0022] The rotary motor for driving the wafer turntable to rotate is fixedly installed at the bottom of the lifting slider, and the lifting motor for driving the lifting slider to rise and fall is fixedly installed at the bottom of the elongated chamber via a fixing bracket; the rotary motor is connected to the lifting slider in a transmission connection.

[0023] The output shaft of the rotary motor of the turntable is fixedly connected to the wafer turntable via a coupling.

[0024] Furthermore, the wafer transfer device includes: an X-axis displacement platform, a Y-axis displacement platform, and an atmospheric wafer holder.

[0025] The X-axis displacement platform includes: an X-axis drive motor, an X-axis transmission mechanism, an X-axis slide, and an X-axis positioning sensor.

[0026] The Y-axis displacement platform includes: a Y-axis drive motor, a Y-axis transmission mechanism, a Y-axis slide, and a Y-axis positioning sensor;

[0027] The X-axis drive motor is connected to the X-axis slide table via an X-axis transmission mechanism; the Y-axis displacement platform is fixedly mounted on the X-axis slide table.

[0028] The Y-axis drive motor is connected to the Y-axis slide via a Y-axis transmission mechanism; the atmospheric wafer support is fixedly mounted on the Y-axis slide.

[0029] The X-axis positioning sensor for locating the position of the atmospheric wafer holder and the Y-axis positioning sensor for locating the position of the atmospheric wafer holder are respectively fixedly mounted on the X-axis slide and the Y-axis slide.

[0030] The technical effects and advantages of this utility model are as follows:

[0031] 1. Compared with the prior art, the magnetron sputtering coating equipment with integrated measurement device disclosed in this utility model can realize multi-target co-sputtering film formation and ion source-assisted sputtering film formation of wafers of 8 inches and below; and can realize automatic transfer of wafers between measurement equipment and coating equipment. The coating equipment and measurement device can realize stress measurement before and after film formation, film thickness measurement, and analysis and calculation of film stress through preset system control.

[0032] 2. Compared with the prior art, this utility model achieves a high degree of integration between magnetron sputtering coating equipment and measuring device, providing a one-stop solution for magnetron sputtering coating, film measurement and analysis; it realizes automatic transfer of wafers in vacuum equipment and atmospheric environment, and realizes automatic switching and transition between vacuum environment and atmospheric environment; it uses ion source to pre-clean the wafer, which can greatly improve the bonding strength between film and substrate, and at the same time improve the hardness and wear and corrosion resistance of film itself, thereby improving the density and stability of ion source-assisted sputtering film formation.

[0033] 3. By setting up a notch positioning mechanism, automatic detection and alignment of notches on the wafer can be achieved, accurately positioning the circumferential position of the wafer; multiple wafers can be placed at once using the sample loading chamber of the coating equipment, reducing manual operation and improving work efficiency; in particular, it avoids removing the wafer from the vacuum environment of the magnetron sputtering coating equipment for measurement, reducing the risk of wafer contamination by impurities in a non-vacuum state and improving the yield of wafer coating. Attached Figure Description

[0034] Figure 1 This is a schematic diagram of the overall structure of this utility model.

[0035] Figure 2 This is a schematic diagram of the interior of the rear support frame of this utility model.

[0036] Figure 3 This is a schematic diagram of the main chamber of the process of this utility model.

[0037] Figure 4 This is a schematic diagram of the sample inlet chamber of this utility model.

[0038] Figure 5 This is a schematic diagram of the notch positioning mechanism of this utility model.

[0039] Figure 6 This is a schematic diagram of the wafer transfer device of this utility model.

[0040] Figure 7 This is a schematic diagram showing the transfer of the wafer within the main process chamber, sample loading chamber, vacuum transfer chamber, and wafer transfer device of this invention.

[0041] Figure 8 This is a schematic diagram of the second wafer carrier of this utility model.

[0042] Figure 9 This is a schematic diagram of a wafer.

[0043] The attached figures are labeled as follows:

[0044] 1. Main process chamber;

[0045] 11. Chamber housing; 12. Vacuum gauge; 13. Cathode; 14. First wafer holder; 15. Ion source;

[0046] 16. Bracket drive system;

[0047] 161. Lifting block; 162. Lifting drive motor; 163. Bracket rotating shaft;

[0048] 164. Rotary shaft drive motor;

[0049] 17. First transfer gate valve; 18. Wafer;

[0050] 2. Sample injection chamber;

[0051] 21. Square chamber; 22. Sealed door;

[0052] 23. Second wafer carrier; 231. Carrier base plate; 232. Wafer tray; 233. Wafer transfer tray;

[0053] 24. Lifting guide rail;

[0054] 25. Lifting drive mechanism; 26. Second transmission gate valve;

[0055] 3. Vacuum transmission cavity;

[0056] 31. Long chamber; 32. Sealed top cover; 33. Vacuum robotic arm; 331. Vacuum wafer holder;

[0057] 34. Notch positioning mechanism;

[0058] 341. Wafer rotary stage; 342. Rotary stage motor; 343. Rotary stage lifting motor;

[0059] 344. Lifting slider; 345. Upper sensor; 346. Lower sensor;

[0060] 4. Front support frame;

[0061] 5. Rear support frame;

[0062] 6. Wafer transfer device;

[0063] 61. X-axis displacement platform;

[0064] 611. X-axis drive motor; 612. X-axis transmission mechanism;

[0065] 613. X-axis slide; 614. X-axis positioning sensor;

[0066] 62. Y-axis displacement platform;

[0067] 621. Y-axis drive motor; 622. Y-axis transmission mechanism;

[0068] 623. Y-axis slide; 624. Y-axis positioning sensor;

[0069] 63. Atmospheric wafer support;

[0070] 7. Stress measuring instrument;

[0071] 8. Film thickness measuring instrument;

[0072] 9. Control system. Detailed Implementation

[0073] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.

[0074] As attached Figure 1-9 The illustrated magnetron sputtering coating equipment includes: a main process chamber 1, a sample loading chamber 2, a vacuum transfer chamber 3, a front support frame 4, a rear support frame 5, a wafer transfer device 6, a stress measuring instrument 7, a film thickness measuring instrument 8, and a control system 9.

[0075] The main process chamber 1 and the sample inlet chamber 2 are both fixedly installed on the top of the front support frame 4. The main process chamber 1 and the vacuum transfer chamber 3 are respectively fixedly installed on both sides of the sample inlet chamber 2. The vacuum transfer chamber 3 is fixedly connected to the sample inlet chamber 2 through a sealing ring. One end of the rear support frame 5 is fixedly connected to the front support frame 4 near the sample inlet chamber 2. The stress measuring instrument 7 and the film thickness measuring instrument 8 are both fixedly installed on the inner wall of the top of the rear support frame 5. The control system 9 is fixedly installed on the inner wall of the bottom of the rear support frame 5. The wafer transfer device 6 is fixedly installed inside the rear support frame 5, and one end of the wafer transfer device 6 is close to the sample inlet chamber 2.

[0076] The main process chamber 1 is used for magnetron sputtering coating; both the main process chamber 1 and the sample injection chamber 2 are equipped with a vacuum system.

[0077] Among them, the front support frame 4 is used to support and fix the main process chamber 1, the sample injection chamber 2, and the vacuum transfer chamber 3; while the rear support frame 5 is used to support and fix the wafer transfer device 6, the stress measuring instrument 7, and the film thickness measuring instrument 8.

[0078] In a preferred embodiment, as shown in the appendix Figure 1-9 As shown, the main process chamber 1 includes: a chamber shell 11, a vacuum gauge 12, a cathode 13, a first wafer carrier 14, an ion source 15, a carrier drive system 16, and a first transfer gate valve 17.

[0079] The vacuum gauge 12 and the first transfer gate valve 17 are fixedly installed on one side of the chamber housing 11, the ion source 15 is fixedly installed on the other side of the chamber housing 11, several cathodes 13 are fixedly installed on the top of the chamber housing 11, and the bracket drive system 16 is fixedly installed on the bottom of the chamber housing 11.

[0080] The bracket drive system 16 is fixed to the flange of the chamber housing 11;

[0081] The first wafer holder 14 is disposed inside the chamber housing 11, and a wafer 18 is placed on the upper surface of the first wafer holder 14.

[0082] Among them, the vacuum gauge 12 is used to measure the vacuum inside the chamber housing 11 and feed it back to the control system 9, while the magnetron sputtering target is mounted on the cathode 13.

[0083] Example: Five cathodes 13 are installed on the chamber shell 11 of the main process chamber 1; thus, single-target sputtering film deposition and multi-target co-sputtering film deposition can be realized according to the coating requirements; while the first wafer carrier 14 is used to place the wafer 18 and adopts an inverted conical guide structure;

[0084] When the wafer 18 is placed from top to bottom onto the first wafer carrier 14, the first wafer carrier 14 with its inverted conical guide structure automatically aligns with the center. This can be used to calibrate the positional deviation of the wafer 18 caused during multiple transfers.

[0085] In a preferred embodiment, as shown in the appendix Figure 1-9 As shown, the bracket drive system 16 includes: a lifting block 161, a lifting drive motor 162, a bracket rotation shaft 163, and a rotation shaft drive motor 164.

[0086] The lifting drive motor 162 used to drive the lifting block 161 to rise and fall is fixedly installed at the bottom of the chamber housing 11 by a fixing bracket, and the lifting drive motor 162 is connected to the lifting block 161 in a transmission connection.

[0087] A rotary shaft drive motor 164 for driving the first wafer carrier 14 to rotate is fixedly installed at the bottom of the lifting block 161. The output shaft of the rotary shaft drive motor 164 is fixedly connected to one end of the carrier rotation shaft 163 through a coupling. The other end of the carrier rotation shaft 163, which passes through the chamber housing 11, is fixedly connected to the first wafer carrier 14.

[0088] The rotary shaft drive motor 164 drives the bracket rotary shaft 163 to rotate via a coupling, thereby driving the first wafer bracket 14 and the wafer 18 to rotate together; while the lifting drive motor 162 drives the lifting block 161 to move up and down via a transmission system. The bracket rotary shaft 163 and the rotary shaft drive motor 164 are both fixed on the lifting block 161, so the lifting drive motor 162 can drive the first wafer bracket 14 and the wafer 18 to move up and down.

[0089] The transmission system can be selected as follows: the lifting drive motor 162 drives the screw to rotate, and the lifting block 161 is threadedly connected to the screw, so that the rotation of the screw drives the lifting block 161 to rise and fall, thereby realizing the transmission.

[0090] The lifting action of the first wafer carrier 14, in conjunction with the vacuum robotic arm 33 of the vacuum transfer cavity 3, completes the automatic picking and placing of the wafer 18. During the magnetron sputtering coating process, the first wafer carrier 14 drives the wafer 18 to rotate at a uniform speed, which can improve the uniformity of the film layer.

[0091] The ion source 15 can pre-clean the wafer 18 before sputtering, and thus plays an auxiliary role in the sputtering process. The ion source 15 includes an ion source gun head and an ion source controller. The ion source gun head is fixed on the flange of the chamber housing 11.

[0092] In this process, after the wafer 18 is automatically transferred from the sample loading chamber 2 to the main process chamber 1, the ion source controller starts the ion source 15 to emit an ion beam to bombard the surface of the wafer 18, removing contaminants such as water, adsorbed gases, and hydrocarbon residues. After the ion source 15 has cleaned the wafer 18, the system starts the magnetron sputtering coating process. During the sputtering coating process, the ion beam emitted by the ion source 15 acts on the surface of the wafer 18 to bombard the growing film. It increases the energy of the outermost atomic layer when the film is formed, thereby affecting the hardness, density, and surface morphology of the microstructure, so as to achieve better bonding and adhesion, and obtain a dense film with more uniform grains and smaller gaps.

[0093] In a preferred embodiment, as shown in the appendix Figure 1-9 As shown, the sample injection chamber 2 includes: a square chamber 21, a sealing door 22, a second wafer holder 23, a lifting guide rail 24, a lifting drive mechanism 25, and a second transfer gate valve 26.

[0094] The sealing door 22 is sealed to the square chamber 21 by a rubber ring. The lifting guide rail 24 is fixedly installed on the inner wall of the top of the square chamber 21. The second wafer tray 23 is set on the lifting guide rail 24. The lifting drive mechanism 25 for driving the second wafer tray 23 to rise and fall is set on the outer wall of the top of the square chamber 21. The second transmission gate valve 26 is fixedly installed on the square chamber 21.

[0095] Among them, the lifting drive mechanism 25 is used to drive the second wafer carrier 23 to move up and down along the lifting guide rail, thereby driving the wafer tray 232 and the wafer transfer tray 233 of the second wafer carrier 23 to lift up and down.

[0096] Example: The lifting drive mechanism 25 can drive the bolt to rotate through the motor, and then the lifting body connected to the thread on the bolt will lift and lower. Then the lifting body will be connected to the second wafer carrier 23, and the second wafer carrier 23 will lift and lower.

[0097] In a preferred embodiment, as shown in the appendix Figure 1-9 As shown, the second wafer carrier 23 includes: a carrier base plate 231, a plurality of wafer trays 232, and a wafer transfer tray 233.

[0098] The wafer transfer tray 233 is fixedly installed on the bottom side of the tray base plate 231, and several wafer trays 232 are fixedly installed on the side of the tray base plate 231 and are all located above the wafer transfer tray 233.

[0099] In one embodiment, there are 6 layers of wafer trays 232 and 1 layer of wafer transfer trays 233; the wafer transfer tray 233 is located at the bottom layer and adopts a four-claw structure to hook the wafer 18 into the wafer transfer tray 233, so that the wafer 18 can be picked up and put in from the front, back, left and right sides.

[0100] In a preferred embodiment, as shown in the appendix Figure 1-9 As shown, the vacuum transmission chamber 3 includes: an elongated chamber 31, a sealed top cover 32, a vacuum robotic arm 33, and a Notch positioning mechanism 34;

[0101] The sealing cover 32 is fixedly installed on the top of the elongated chamber 31, the vacuum robotic arm 33 is fixedly installed inside the elongated chamber 31, the end of the vacuum robotic arm 33 is fixedly installed with a vacuum wafer holder 331, and the notch positioning mechanism 34 is set on the elongated chamber 31 and the sealing cover 32.

[0102] The vacuum transfer chamber 3 is connected to the sample injection chamber 2 through a sealing ring to form a vacuum chamber and is equipped with a vacuum pumping system. The vacuum robotic arm 33 is installed in the long chamber 31. The vacuum wafer holder 331 of the vacuum robotic arm 33 can take out the wafer 18 from the wafer holder 232 and transfer it to the wafer transfer tray 233, or transfer it to the first wafer holder 14 in the main process chamber 1.

[0103] In a preferred embodiment, as shown in the appendix Figure 1-9 As shown, the notch positioning mechanism 34 includes: a wafer turntable 341, a turntable rotation motor 342, a turntable lifting motor 343, a lifting slider 344, an upper sensor 345, and a lower sensor 346.

[0104] The upper sensor 345 and the lower sensor 346 are respectively fixed to the outer wall of the sealed upper cover 32 and the bottom of the elongated chamber 31. The wafer turntable 341 is located inside the elongated chamber 31.

[0105] A rotary motor 342 for driving the wafer turntable 341 to rotate is fixedly installed at the bottom of the lifting slider 344, and a rotary motor 343 for driving the lifting slider 344 to rise and fall is fixedly installed at the bottom of the elongated chamber 31 through a fixing bracket; the rotary motor 343 is connected to the lifting slider 344 in a transmission connection.

[0106] The output shaft of the rotary motor 342 is fixedly connected to the wafer rotary table 341 via a coupling.

[0107] In a preferred embodiment, as shown in the appendix Figure 1-9 As shown, the wafer transfer device 6 includes: an X-axis displacement platform 61, a Y-axis displacement platform 62, and an atmospheric wafer holder 63.

[0108] The X-axis displacement platform 61 includes: an X-axis drive motor 611, an X-axis transmission mechanism 612, an X-axis slide 613, and an X-axis positioning sensor 614.

[0109] The Y-axis displacement platform 62 includes: a Y-axis drive motor 621, a Y-axis transmission mechanism 622, a Y-axis slide 623, and a Y-axis positioning sensor 624;

[0110] The X-axis drive motor 611 is connected to the X-axis slide 613 via the X-axis transmission mechanism 612; the Y-axis displacement platform 62 is fixedly mounted on the X-axis slide 613.

[0111] The Y-axis drive motor 621 is connected to the Y-axis slide 623 via the Y-axis transmission mechanism 622; the atmospheric wafer support 63 is fixedly installed on the Y-axis slide 623.

[0112] The X-axis positioning sensor 614 and the Y-axis positioning sensor 624, used for positioning the atmospheric wafer holder 63, are respectively fixedly mounted on the X-axis slide 613 and the Y-axis slide 623.

[0113] Among them, the Y-axis drive motor 621 drives the Y-axis slide 623 to slide along the Y-axis direction through the Y-axis transmission mechanism 622; while the Y-axis displacement platform 62 is fixed on the X-axis slide 613 of the X-axis displacement platform 61; and the X-axis drive motor 611 drives the X-axis slide 613 to slide back and forth along the X-axis direction through the X-axis transmission mechanism 612, thereby driving the atmospheric wafer holder 63 to move along the X-axis.

[0114] The wafer transfer device 6 takes out the wafer 18 from the second wafer holder 23 of the sample loading chamber 2 and transfers it sequentially to the measurement platform or measurement area of ​​the stress measuring instrument 7 and the film thickness measuring instrument 8 to complete the measurement of the film thickness and internal stress of the wafer 18.

[0115] A method for applying a magnetron sputtering coating equipment, comprising a magnetron sputtering coating equipment with an integrated measuring device, the method including the following steps:

[0116] S1: The operator places the wafer 18 into the wafer tray 232 of the second wafer holder 23 in the sample loading chamber 2. At this time, the vacuum wafer holder 331 of the vacuum robotic arm 33 is in the initial position; the channel of the second transfer valve 26 is closed, and the sample loading chamber 2 begins to be evacuated; the predetermined vacuum level is reached.

[0117] S2: Vacuum robotic arm 33 acquires wafer 18: Vacuum robotic arm 33 begins to extend forward, placing vacuum wafer holder 331 below the center of wafer holder 232, and then the second wafer holder 23 descends to place wafer 18 on vacuum wafer holder 331, at which point wafer 18 is detached from the second wafer holder 23.

[0118] S3: Feature notch positioning of wafer 18: The vacuum robotic arm 33 retracts, bringing wafer 18 into the vacuum transfer chamber 3 and moving it directly above the wafer turntable 341 of the notch positioning mechanism 34; then, the turntable lifting motor 343 drives the wafer turntable 341 to rise and pass through the vacuum wafer holder 331 until it lifts wafer 18, causing it to detach from the vacuum wafer holder 331; subsequently, the turntable rotation motor 342 drives the wafer turntable 341 to rotate and position the feature notch on wafer 18 to a preset position; after positioning, the turntable lifting motor 343 drives the wafer turntable 341 to descend and place wafer 18 back into the vacuum wafer holder 331; finally, the vacuum robotic arm 33 extends forward and places the wafer 18, after notch positioning, above the wafer transfer tray 233 in the sample loading chamber 2; then the second wafer tray 23 rises, placing wafer 18 into the wafer transfer tray 233.

[0119] S4: Sample injection chamber 2 first automatically performs a vacuum breaking operation to restore the air pressure in sample injection chamber 2 to atmospheric state. After the second transfer gate valve 26 channel is opened, proceed to S5.

[0120] S5: Atmospheric wafer holder 63 acquires wafer 18: The X-axis drive motor 611 of the wafer transfer device 6 drives the atmospheric wafer holder 63 to extend into the sample loading chamber 2 and positions the atmospheric wafer holder 63 below the center of the wafer transfer tray 233; then, the second wafer tray 23 descends to place the wafer 18 on the atmospheric wafer holder 63; subsequently, the X-axis drive motor 611 drives the atmospheric wafer holder 63 to remove the wafer 18 from the sample loading chamber 2 and bring it into the rear support frame 5;

[0121] S6: Measurement and recording of film thickness and internal stress of wafer 18: Based on the position of the atmospheric wafer holder 63 fed back by the X-axis positioning sensor 614 and the Y-axis positioning sensor 624, the control system 9 controls the X-axis drive motor 611 and the Y-axis drive motor 621 to move the atmospheric wafer holder 63 according to the preset operation procedure of the control system 9, so as to sequentially transfer wafer 18 to the measurement area of ​​stress measuring instrument 7 and film thickness measuring instrument 8, and measure the film thickness and internal stress of wafer 18; at the same time, the control system 9 records the measurement position and measurement data;

[0122] S7: After the measurement is completed, the X-axis drive motor 611 of the wafer transfer device 6 drives the atmospheric wafer holder 63 to send the measured wafer 18 back into the sample loading chamber 2 and place it above the second wafer holder 23 in the sample loading chamber 2; then, the second wafer holder 23 rises, so that the wafer 18 is placed in the wafer transfer tray 233.

[0123] S8: The second transfer valve 26 is closed, and the sample injection chamber 2 begins to be evacuated; after the predetermined vacuum level is reached, S9 begins.

[0124] S9: The first wafer carrier 14 acquires the wafer 18: The vacuum robotic arm 33 extends forward, placing the vacuum wafer holder 331 below the center of the wafer transfer tray 233. As the second wafer carrier 23 descends, the wafer 18 is placed on the vacuum wafer holder 331. Then, the vacuum robotic arm 33 continues forward, the first transfer valve 17 opens, and the wafer 18 on the vacuum wafer holder 331 is sent into the main process chamber 1. The lifting drive motor 162 of the carrier drive system 16 drives the first wafer carrier 14 to rise and pass through the vacuum wafer holder 331 until the wafer 18 is lifted. The vacuum robotic arm 33 retracts into the sample inlet chamber 2, and the channel of the first transfer valve 17 is closed. At this time, the sample inlet chamber 2 and the main process chamber 1 are in a separate and isolated state. Subsequently, the main process chamber 1 continues to be evacuated. After the main process chamber 1 reaches a higher vacuum level, the magnetron sputtering coating process is performed.

[0125] S10: After the coating is completed, the first transfer gate valve 17 channel is opened, the vacuum robotic arm 33 extends into the main process chamber 1, and the lifting drive motor 162 drives the first wafer carrier 14 to descend so that the coated wafer 18 is placed back into the vacuum wafer carrier 331; the vacuum robotic arm 33 retracts.

[0126] S11: Repeat steps S3, S4, S5 and S6 in sequence to obtain the film thickness and internal stress of wafer 18 after coating;

[0127] After the measurement is completed again, the X-axis drive motor 611 of the wafer transfer device 6 drives the atmospheric wafer holder 63 to transfer the measured wafer 18 back into the sample loading chamber 2 and place it above the second wafer holder 23 in the sample loading chamber 2; then, the second wafer holder 23 rises, so that the wafer 18 is placed in the wafer holder 232.

[0128] S12: Compare the internal stress of wafer 18 before and after coating, and feed the comparison results back to control system 9; provide relevant data to the operator, and the operator adjusts the control parameters of ion source 15 and process-related parameters according to the data.

[0129] In a preferred embodiment, as shown in the appendix Figure 1-9 As shown in S3: the outer wall of the elongated chamber 31 is provided with transparent glass, and the upper sensor 345 and the lower sensor 346 form a set of through-beam sensors and pass through the glass to form a scanning area inside the elongated chamber 31;

[0130] When the wafer turntable 341 rises and lifts the wafer 18, the edge of the wafer 18 is located in the scanning area of ​​the through-beam sensor. The turntable rotation motor 342 drives the wafer turntable 341 to rotate, thereby rotating the wafer 18. When the upper sensor 345 and the lower sensor 346 scan the notch of the wafer 18 and feed this position back to the control system 9, the wafer turntable 341 stops rotating and records the notch of the wafer 18 for positioning. Then, according to the system preset, the notch of the wafer 18 is rotated to the designated position.

[0131] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0132] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A magnetron sputtering coating apparatus with an integrated measuring device, characterized in that: The magnetron sputtering coating equipment includes: a main process chamber (1), a sample loading chamber (2), a vacuum transfer chamber (3), a front support frame (4), a rear support frame (5), a wafer transfer device (6), a stress measuring instrument (7), a film thickness measuring instrument (8), and a control system (9). The main process chamber (1) and the sample inlet chamber (2) are both fixedly installed on the top of the front support frame (4). The main process chamber (1) and the vacuum transfer chamber (3) are respectively fixedly installed on both sides of the sample inlet chamber (2). The vacuum transfer chamber (3) is fixedly connected to the sample inlet chamber (2) through a sealing ring. One end of the rear support frame (5) is fixedly connected to the front support frame (4) near the sample inlet chamber (2). The stress measuring instrument (7) and the film thickness measuring instrument (8) are both fixedly installed on the inner wall of the top of the rear support frame (5). The control system (9) is fixedly installed on the inner wall of the bottom of the rear support frame (5). The wafer transfer device (6) is fixedly installed inside the rear support frame (5). One end of the wafer transfer device (6) is close to the sample inlet chamber (2).

2. The magnetron sputtering coating equipment with an integrated measuring device according to claim 1, characterized in that: The main process chamber (1) includes: a chamber shell (11), a vacuum gauge (12), a cathode (13), a first wafer carrier (14), an ion source (15), a carrier drive system (16), and a first transfer gate valve (17). The vacuum gauge (12) and the first transfer valve (17) are fixedly installed on one side of the chamber housing (11), the ion source (15) is fixedly installed on the other side of the chamber housing (11), several cathodes (13) are fixedly installed on the top of the chamber housing (11), the carriage drive system (16) is fixedly installed on the bottom of the chamber housing (11), the first wafer carriage (14) is disposed inside the chamber housing (11), and a wafer (18) is placed on the upper surface of the first wafer carriage (14).

3. The magnetron sputtering coating equipment with an integrated measuring device according to claim 2, characterized in that: The bracket drive system (16) includes: a lifting block (161), a lifting drive motor (162), a bracket rotation shaft (163), and a rotation shaft drive motor (164). The lifting drive motor (162) used to drive the lifting block (161) to rise and fall is fixedly installed at the bottom of the chamber housing (11) by a fixing bracket, and the lifting drive motor (162) is connected to the lifting block (161) in a transmission connection. The rotary shaft drive motor (164) used to drive the first wafer carrier (14) to rotate is fixedly installed at the bottom of the lifting block (161). The output shaft of the rotary shaft drive motor (164) is fixedly connected to one end of the carrier rotation shaft (163) through a coupling. The other end of the carrier rotation shaft (163) that passes through the chamber housing (11) is fixedly connected to the first wafer carrier (14).

4. The magnetron sputtering coating equipment with an integrated measuring device according to claim 1, characterized in that: The sample injection chamber (2) includes: a square chamber (21), a sealing door (22), a second wafer holder (23), a lifting guide rail (24), a lifting drive mechanism (25), and a second transfer gate valve (26). The sealing door (22) is sealed to the square cavity (21) by a rubber ring. The lifting guide rail (24) is fixedly installed on the inner wall of the top of the square cavity (21). The second wafer tray (23) is set on the lifting guide rail (24). The lifting drive mechanism (25) for driving the second wafer tray (23) to rise and fall is set on the outer wall of the top of the square cavity (21). The second transmission gate valve (26) is fixedly installed on the square cavity (21).

5. The magnetron sputtering coating equipment with an integrated measuring device according to claim 4, characterized in that: The second wafer carrier (23) includes: a carrier base plate (231), a plurality of wafer trays (232), and a wafer transfer tray (233). The wafer transfer tray (233) is fixedly installed on the bottom side of the tray base plate (231), and several wafer trays (232) are fixedly installed on the side of the tray base plate (231) and are all located above the wafer transfer tray (233).

6. The magnetron sputtering coating equipment with an integrated measuring device according to claim 1, characterized in that: The vacuum transmission cavity (3) includes: an elongated chamber (31), a sealed top cover (32), a vacuum robotic arm (33), and a Notch positioning mechanism (34); The sealing cover (32) is fixedly installed on the top of the elongated chamber (31), the vacuum robotic arm (33) is fixedly installed inside the elongated chamber (31), and a vacuum wafer holder (331) is fixedly installed at the end of the vacuum robotic arm (33). The notch positioning mechanism (34) is set on the elongated chamber (31) and the sealing cover (32).

7. The magnetron sputtering coating equipment with an integrated measuring device according to claim 6, characterized in that: The notch positioning mechanism (34) includes: a wafer turntable (341), a turntable rotation motor (342), a turntable lifting motor (343), a lifting slider (344), an upper sensor (345), and a lower sensor (346); The upper sensor (345) and lower sensor (346) are respectively fixed to the outer wall of the sealed upper cover (32) and the bottom of the elongated chamber (31), and the wafer turntable (341) is located inside the elongated chamber (31). The turntable rotation motor (342) for driving the wafer turntable (341) to rotate is fixedly installed at the bottom of the lifting slider (344), and the turntable lifting motor (343) for driving the lifting slider (344) to rise and fall is fixedly installed at the bottom of the elongated chamber (31) by a fixing bracket; the turntable lifting motor (343) is connected to the lifting slider (344) in a transmission connection. The output shaft of the rotary motor (342) is fixedly connected to the wafer turntable (341) via a coupling.

8. The magnetron sputtering coating equipment with an integrated measuring device according to claim 1, characterized in that: The wafer transfer device (6) includes: an X-axis displacement platform (61), a Y-axis displacement platform (62), and an atmospheric wafer holder (63). The X-axis displacement platform (61) includes: an X-axis drive motor (611), an X-axis transmission mechanism (612), an X-axis slide (613), and an X-axis positioning sensor (614). The Y-axis displacement platform (62) includes: a Y-axis drive motor (621), a Y-axis transmission mechanism (622), a Y-axis slide (623), and a Y-axis positioning sensor (624); The X-axis drive motor (611) is connected to the X-axis slide (613) via the X-axis transmission mechanism (612); the Y-axis displacement platform (62) is fixedly mounted on the X-axis slide (613); The Y-axis drive motor (621) is connected to the Y-axis slide (623) via the Y-axis transmission mechanism (622); the atmospheric wafer support (63) is fixedly mounted on the Y-axis slide (623); The X-axis positioning sensor (614) for positioning the atmospheric wafer holder (63) and the Y-axis positioning sensor (624) for positioning the atmospheric wafer holder (63) are respectively fixedly mounted on the X-axis slide (613) and the Y-axis slide (623).

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