Tempered glass substrate structure for improving edge defects
By setting a metal reinforcement structure at the edge of the glass substrate to buffer thermal expansion stress, the problem of thermal expansion coefficient mismatch between the glass substrate cutting path and the redistribution layer is solved, the occurrence rate of seware defects is reduced, and the edge strength and integrity of the glass substrate are improved.
Patent Information
- Application Number
- CN202423098565.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-16
- Publication Date
- 2025-12-02
- Estimated Expiration
- 2034-12-16
AI Technical Summary
The mismatch in the coefficients of thermal expansion between the dicing path and the redistribution layer of the glass substrate causes stress, resulting in Seware defects. These defects propagate during the dicing process, affecting the edge integrity of the glass substrate.
A metal reinforcement structure, including multilayer metal rings and connecting rings, is set at the edge of the glass substrate. By thinning the dielectric layer, thermal expansion stress is buffered, reducing the possibility of seware defects.
By setting a metal reinforcement structure at the edge of the glass substrate, the incidence of seware defects is significantly reduced, the edge strength and integrity of the glass substrate are improved, and cracks are prevented from propagating during the cutting process.
Smart Images
Figure CN223624995U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to a structure of a glass substrate, and more particularly to a structure of a reinforced glass substrate that improves edge defects. Background Technology
[0002] In the field of circuit manufacturing using glass substrates, the glass substrate and a carrier plate made of other dielectric materials are currently formed on the same plane, with a cutting groove between the glass substrate and the carrier plate, the groove being filled with dielectric material. After the circuit is formed on the glass substrate, the glass substrate can be edge-milled, that is, the glass substrate can be cut off along the cutting groove using an edge-milling machine (router; slab cutting machine).
[0003] The problem is that the cut-out between the glass substrate and the carrier plate has a mismatch in coefficients of thermal expansion (CTE) with the material on the glass substrate that often carries the redistribution layer (RDL), such as copper wires and dielectric materials. When a temperature excursion occurs between the cut-out and the redistribution layer, stress is generated between the materials with different CTEs, and this stress becomes tensile on the side of the glass substrate near the cut-out due to the free edge effect. At this point, the cut-out located next to the glass substrate may develop a so-called Seware defect (crack) because it cannot withstand the stress. This Seware defect can also be called a Seware defect. Subsequently, the Seware defect at the edge of the glass substrate gradually extends inward, causing larger and more noticeable cracks. To prevent Seware defect cracks from appearing on the glass substrate of the final product, the aforementioned cut-out needs structural modification. To clarify, the term "seware defect" is borrowed from the concept of SeWaRe, described in several academic papers published by Scott R. McCann in the IEEE Transactions on Device and Materials Reliability journal. These papers explain the formation mechanism of seware defects and explore the stress transmission mechanism in materials.
[0004] Please see Figure 5 The cross-sectional schematic diagram shown and Figure 6The top view diagram shows that current glass substrate circuit manufacturing processes involve a circuit being formed on a glass substrate 100. The glass substrate 100 has multiple side edges 101 on both its front and back sides, and the circuit on both sides can be a multi-layered circuit structure, with an internal dielectric material 120 between the multi-layered circuit structures. The internal dielectric material 120 and the surface dielectric material 130 covering the outermost layer of the multi-layered circuit structure can be the same or different dielectric materials. A gap 150 is left between the glass substrate 100 and an outer frame dielectric material 200; this gap 150 is the aforementioned cutting path, and the gap 150 is filled with the internal dielectric material 120. To separate the glass substrate 100 from the outer frame dielectric material 200, current processes use photolithography to cut the glass substrate 100 along the gap 150. However, before the glass substrate 100 is cut, the gap 150 and the glass substrate 100 have already been affected by the thermal expansion stress of the material, resulting in a seware defect 102. In order to prevent the seware defect 102 from further expanding after the glass substrate is edge-trimmed, the glass substrate needs to be structurally modified to reduce the probability of the seware defect 102 occurring before edge-trimming. Utility Model Content
[0005] This invention provides a reinforced glass substrate structure for improving edge defects. The reinforced glass substrate structure applies stress buffer before the glass substrate is edge-trimmed, thereby significantly reducing the possibility of Seware defects occurring at the edges of the glass substrate.
[0006] The present invention provides a reinforced glass substrate structure for improving edge defects, wherein the reinforced glass substrate structure comprises:
[0007] A glass substrate has a first surface and a second surface opposite to each other, and the glass substrate further has at least one side surface; the first surface is surrounded by a first edge, and the second surface is surrounded by a second edge;
[0008] A core dielectric layer is horizontally surrounding the glass substrate, and a gap is left between the core dielectric layer and at least one side surface of the glass substrate, the gap being filled with a gap dielectric layer; the core dielectric layer has a first core dielectric surface and a second core dielectric surface opposite to each other, and the core dielectric layer also has at least one core dielectric side surface; the first core dielectric surface is surrounded by a first core dielectric edge, and the second core dielectric surface is surrounded by a second core dielectric edge;
[0009] A first dielectric layer is disposed on the first surface of the glass substrate and the first core dielectric surface of the core dielectric layer; a first circuit is provided in the first dielectric layer;
[0010] A second dielectric layer is disposed on the second surface of the glass substrate and the second core dielectric surface of the core dielectric layer; a second circuit is provided in the second dielectric layer;
[0011] A first metal reinforcement structure is disposed in the first dielectric layer corresponding to the first edge and extends into the first dielectric layer corresponding to the first core dielectric edge; and
[0012] A second metal reinforcement structure is disposed in the second dielectric layer corresponding to the second edge and extends into the second dielectric layer corresponding to the second core dielectric edge;
[0013] The first circuit and the second circuit are both multilayer circuits, and the first metal-reinforced structure and the second metal-reinforced structure are both multilayer structures. Each layer of the first circuit corresponds horizontally to each layer of the first metal-reinforced structure in the first dielectric layer, and each layer of the second circuit corresponds horizontally to each layer of the second metal-reinforced structure in the second dielectric layer.
[0014] The reinforced glass substrate structure for improving edge defects as described above, wherein the first metal reinforcement structure includes a plurality of first metal rings, the plurality of first metal rings are stacked on top of each other, and the plurality of first metal rings are spaced apart from each other and provided with the first dielectric layer.
[0015] Each of the first metal rings is horizontally aligned with one of the circuit layers in the first circuit.
[0016] The reinforced glass substrate structure described above, wherein the first metal reinforcement structure further includes:
[0017] A first metal connecting ring is disposed in the first dielectric layer and perpendicularly connects a plurality of the first metal rings to the first surface of the glass substrate; and
[0018] A third metal connecting ring is disposed in the first dielectric layer and perpendicularly connects the plurality of the first metal rings to the first core dielectric surface of the core dielectric layer.
[0019] The reinforced glass substrate structure for improving edge defects as described above, wherein the first dielectric layer, in which the plurality of first metal rings are spaced apart from each other, has a first dielectric layer thickness, and the first dielectric layer thickness is less than or equal to 10 micrometers.
[0020] The reinforced glass substrate structure for improving edge defects as described above, wherein the first dielectric layer is a redistribution layer.
[0021] The reinforced glass substrate structure for improving edge defects as described above, wherein the second metal reinforcement structure includes a plurality of second metal rings, the plurality of second metal rings being stacked on top of each other, and the plurality of second metal rings being spaced apart from each other and having the second dielectric layer disposed thereon;
[0022] Each of the second metal rings is horizontally aligned with one of the layers of the second circuit.
[0023] The reinforced glass substrate structure for improving edge defects as described above, wherein the second metal reinforcement structure further includes:
[0024] A second metal connecting ring is disposed in the second dielectric layer and perpendicularly connects the plurality of second metal rings to the second surface of the glass substrate; and
[0025] A fourth metal connecting ring is disposed in the first dielectric layer and perpendicularly connects the plurality of second metal rings to the second core dielectric surface of the core dielectric layer.
[0026] The reinforced glass substrate structure for improving edge defects as described above, wherein the second dielectric layer, in which the plurality of second metal rings are spaced apart from each other, has a second dielectric layer thickness, and the second dielectric layer thickness is less than or equal to 10 micrometers.
[0027] The reinforced glass substrate structure for improving edge defects as described above, wherein the second dielectric layer is a redistribution layer.
[0028] The reinforced glass substrate structure for improving edge defects as described above, wherein the core dielectric layer is a copper foil substrate.
[0029] Compared with the prior art, the present invention has the following features and advantages:
[0030] According to an academic paper published by Scott R. McCann in the IEEE Transactions on Device and Materials Reliability, the likelihood of seware defects decreases as the thickness of the dielectric material decreases. Based on these findings, this invention improves the hardware by incorporating a first metal reinforcement structure in the first dielectric layer corresponding to the first edge, thereby reducing the material thickness of the first dielectric layer at that edge. Furthermore, this invention also incorporates a second metal reinforcement structure in the second dielectric layer corresponding to the second edge, further reducing the material thickness of the second dielectric layer at that edge. Thus, the glass substrate between the first and second edges is buffered by the first and second metal reinforcement structures, reducing thermal expansion stress and significantly decreasing the likelihood of seware defects and cracks forming on at least one side surface of the glass substrate. Attached Figure Description
[0031] The accompanying drawings described herein are for illustrative purposes only and are not intended to limit the scope of this invention in any way. Furthermore, the shapes and proportions of the components in the drawings are merely illustrative to aid in understanding the invention and do not specifically limit the shapes and proportions of the components. Those skilled in the art, under the guidance of this invention, can select various possible shapes and proportions to implement this invention according to specific circumstances.
[0032] Figure 1 This is a cross-sectional schematic diagram of an embodiment of the reinforced glass substrate structure for improving edge defects according to the present invention.
[0033] Figure 2 This is a top view schematic diagram of an embodiment of the first metal reinforcement structure of the glass substrate structure of this utility model.
[0034] Figure 3 This is a cross-sectional schematic diagram of another embodiment of the reinforced glass substrate structure of this utility model;
[0035] Figure 4 This is a top view schematic diagram of another embodiment of the first metal reinforcement structure of the glass substrate structure of this utility model.
[0036] Figure 5 This is a cross-sectional schematic diagram of a glass substrate that already has Sevare defects before the edge trimming process in the current glass substrate circuit manufacturing process.
[0037] Figure 6 This is a top view of a glass substrate that already has Severyday defects before the edge trimming process in current glass substrate circuit manufacturing technology. Detailed Implementation
[0038] The details of this utility model can be more clearly understood by referring to the accompanying drawings and the description of specific embodiments. However, the specific embodiments of this utility model described herein are for illustrative purposes only and should not be construed as limiting the utility model in any way. Under the teachings of this utility model, those skilled in the art can conceive of any possible modifications based on this utility model, and these should all be considered to fall within the scope of this utility model.
[0039] Unless otherwise defined, the directions such as up, down, left, and right mentioned in this document refer to those shown in this utility model. Figure 1 The directions of up, down, left, and right are used as a reference, and will be explained here.
[0040] In the technical field of glass substrate circuit manufacturing, the reinforced glass substrate structure for improving edge defects provided by this invention is a product before the glass substrate is milled. According to an academic paper published by Scott R. McCann in the IEEE Transactions on Device and Materials Reliability, the probability of Seware defects (also known as Seware defects) decreases when the thickness of the dielectric material is reduced. Based on this theoretical foundation, the reinforced glass substrate structure of this invention improves the hardware structure to significantly reduce the probability of Seware defects occurring in the glass substrate. Different embodiments of this reinforced glass substrate structure will be presented below to fully protect the structural technical features that can be derived from this invention.
[0041] Please see Figure 1 Cross-sectional schematic diagram and Figure 2 As shown in the top view, the reinforced glass substrate structure for improving edge defects of the glass substrate according to this utility model includes a glass substrate 10, a core dielectric layer 20, a first dielectric layer 30, a second dielectric layer 40, a first metal reinforcement structure 50 and a second metal reinforcement structure 60.
[0042] The glass substrate 10 has a first surface 11 and a second surface 12 facing each other, and the first surface 11 is surrounded by a first edge 13 and the second surface is surrounded by a second edge 14. In addition, the glass substrate 10 also has at least one side surface 15.
[0043] The core dielectric layer 20 horizontally surrounds the glass substrate 10, and a gap 16 is left between the core dielectric layer 20 and at least one side surface 15 of the glass substrate 10. A gap dielectric layer 17 is filled in the gap 16. The core dielectric layer 20 has a first core dielectric surface 21 and a second core dielectric surface 22 facing each other. The first core dielectric surface is surrounded by a first core dielectric edge 23, and the second core dielectric surface is surrounded by a second core dielectric edge 24. Furthermore, the core dielectric layer 20 also has at least one core dielectric side surface 25.
[0044] The first dielectric layer 30 is disposed on the first surface 11 of the glass substrate 10 and the first core dielectric surface 21 of the core dielectric layer 20, and a first circuit 111 is provided in the first dielectric layer 30. The second dielectric layer 40 is disposed on the second surface 12 of the glass substrate 10 and the second core dielectric surface 22 of the core dielectric layer 20, and a second circuit 112 is provided in the second dielectric layer 40. The first circuit 111 and the second circuit 112 are electrically connected to each other, but the first circuit 111 and the second circuit 112 are not the focus of this utility model improvement, so the form of the first circuit 111 and the second circuit 112 is not limited, and the first circuit 111 and the second circuit 112 are multilayer circuits.
[0045] The first metal reinforcement structure 50 and the second metal reinforcement structure 60 of this invention are both multilayer structures. The first metal reinforcement structure 50 is disposed in the first dielectric layer 30 corresponding to the first edge 13, and the second metal reinforcement structure 60 is disposed in the second dielectric layer 40 corresponding to the second edge 14. Furthermore, the first metal reinforcement structure 50 also extends horizontally from the first dielectric layer 30 corresponding to the first edge 13 to the first dielectric layer 30 corresponding to the first core dielectric edge 23. Thus, the first metal reinforcement structure 50 spans the gap 16 between the core dielectric layer 20 and the glass substrate 10. Similarly, the second metal reinforcement structure 60 also extends horizontally from the second dielectric layer 40 corresponding to the second edge 14 to the second dielectric layer 40 corresponding to the second core dielectric edge 24. Thus, the second metal reinforcement structure 60 also spans the gap 16 between the core dielectric layer 20 and the glass substrate 10.
[0046] Furthermore, each layer of the first circuit 111 corresponds horizontally to each layer of the first metal reinforcement structure 50 in the first dielectric layer 30, and each layer of the second circuit 112 corresponds horizontally to each layer of the second metal reinforcement structure 60 in the second dielectric layer 40. The key technical point is that by providing the first metal reinforcement structure 50 in the first dielectric layer 30 corresponding to the first edge 13, the material thickness of the first dielectric layer 30 corresponding to the first edge 13 can be reduced. Similarly, by providing the second metal reinforcement structure 60 in the second dielectric layer 40 corresponding to the second edge 14, the material thickness of the second dielectric layer 40 corresponding to the second edge 14 can be reduced. Thus, the glass substrate 10 between the first edge 13 and the second edge 14 can be buffered by the first metal reinforcement structure 50 and the second metal reinforcement structure 60, thereby withstanding less thermal expansion stress and significantly reducing the possibility of seware defects and cracks forming on at least one side surface 15 of the glass substrate 10.
[0047] In detail, the first metal reinforcement structure 50 and the second metal reinforcement structure 60 can each be a ring structure. For the glass substrate 10, the first metal reinforcement structure 50 is located above the first surface 11 of the glass substrate 10, corresponding to the first edge 13, and the second metal reinforcement structure 60 is located below the second surface 12 of the glass substrate 10, corresponding to the second edge 14, overlapping and sandwiching the glass substrate 10. The ring structure of the first metal reinforcement structure 50 and the second metal reinforcement structure 60 can be a continuous structure or a segmented structure in the horizontal direction parallel to the first surface 11 and the second surface 12.
[0048] For example, in Figure 2 In the illustrated embodiment, the annular structure of the first metal reinforcement structure 50 is a continuous structure. In other words, in this embodiment, the first metal reinforcement structure 50 includes a plurality of first metal rings 51. The plurality of first metal rings 51 are stacked on top of each other, and are spaced apart from each other and provided with the first dielectric layer 30. In the horizontal direction parallel to the first surface 11, each of the first metal rings 51 is horizontally aligned with one of the circuit layers in the first circuit 111. Similarly, in this embodiment, the second metal reinforcement structure 60 includes a plurality of second metal rings 61. The plurality of second metal rings 61 are stacked on top of each other, and are spaced apart from each other and provided with the second dielectric layer 40. In the horizontal direction parallel to the second surface 12, each of the second metal rings 61 is horizontally aligned with one of the circuit layers in the second circuit 112. Thus, all of the multiple side surfaces 15 of the glass substrate 10 can enjoy the benefits of the first metal reinforcement structure 50 and the second metal reinforcement structure 60 in relieving thermal expansion stress, thereby reducing the probability of seware defects on all of the multiple side surfaces 15 of the glass substrate 10.
[0049] Please see Figure 3 Cross-sectional schematic diagram and Figure 4 As shown in the top view, the reinforced glass substrate structure for improving edge defects of the glass substrate includes the aforementioned glass substrate 10, the core dielectric layer 20, the first dielectric layer 30, the second dielectric layer 40, the first metal reinforcement structure 50, and the second metal reinforcement structure 60. Figure 3 and Figure 4 The first metal reinforcement structure 50 and the second metal reinforcement structure 60 shown are different from those described above. Figure 1 and Figure 2 As shown in the diagram.
[0050] In this embodiment, the first metal reinforcement structure 50 and the second metal reinforcement structure 60 are not continuous ring structures, but segmented ring structures. For example Figure 4As shown, the first metal reinforcement structure 50 surrounds the first edge 13 of the first surface 11 in multiple segments, and the segments are evenly spaced apart from each other.
[0051] Furthermore, the first metal reinforcement structure 50 not only has multiple first metal rings 51, but also a first metal connecting ring 52 and a third metal connecting ring 53. The first metal connecting ring 52 is disposed in the first dielectric layer 30, and the first metal connecting ring 52 is perpendicularly connected to the multiple first metal rings 51 and the first surface 11 of the glass substrate 10. The third metal connecting ring 53 is disposed in the first dielectric layer 30, and the third metal connecting ring 53 is perpendicularly connected to the multiple first metal rings 51 and the first core dielectric surface 21 of the core dielectric layer 20.
[0052] Furthermore, the second metal reinforcement structure 60 not only has the aforementioned plurality of second metal rings 61, but also a second metal connecting ring 62 and a fourth metal connecting ring 63. The second metal connecting ring 62 is disposed in the second dielectric layer 40, and the second metal connecting ring 62 is perpendicularly connected to the plurality of second metal rings 61 and the second surface 12 of the glass substrate 10. The fourth metal connecting ring 63 is disposed in the second dielectric layer 40, and the fourth metal connecting ring 63 is perpendicularly connected to the plurality of second metal rings 61 and the second core dielectric surface 22 of the core dielectric layer 20.
[0053] Generally speaking, it is visible Figure 3 The first metal ring 51, the first metal connecting ring 52, and the third metal connecting ring 53 of the first metal reinforcement structure 50 shown form an arch-shaped unit 54. This arch-shaped unit 54 is supported on one side of the first core dielectric surface 21 of the core dielectric layer 20 and on the other side of the first surface 11 of the glass substrate 10. Furthermore, from... Figure 4 As can be seen, the first edge 13 of the first surface 11 is arranged at equal intervals around the first edge 13 of the first surface 11, so that the first metal reinforcement structure 50 can uniformly buffer the thermal expansion stress of the first edge 13 of the first surface 11.
[0054] Similarly, the arrangement of the second metal reinforcement structure 60 is mirror-image of the arrangement of the first metal reinforcement structure 50, with the glass substrate 10 as the reference. That is, each of the second metal rings 61, the second metal connecting ring 62, and the fourth metal connecting ring 63 of the second metal reinforcement structure 60 forms an arch-shaped unit, one side of which rests on the second core dielectric surface 22 of the core dielectric layer 20, and the other side rests on the second surface 12 of the glass substrate 10. Furthermore, each of the arch-shaped units is equidistantly arranged around the second edge 14 of the second surface 12, so that the second metal reinforcement structure 60 uniformly buffers the thermal expansion stress of the second edge 14 of the second surface 12.
[0055] Through the explanation of the different embodiments above, it is clear that the present invention only requires the following key conditions to reduce the probability of seware defects occurring in the glass substrate 10: the first metal reinforcement structure 50 is disposed in the first dielectric layer 30 corresponding to the first edge 13, and the second metal reinforcement structure 60 is disposed in the second dielectric layer 40 corresponding to the second edge 14. Furthermore, relative to the multilayered first circuit 111 and second circuit 112, each layer of the first circuit 111 horizontally corresponds to the first metal reinforcement structure 50 in the first dielectric layer 30, and each layer of the second circuit 112 horizontally corresponds to the second metal reinforcement structure 60 in the second dielectric layer 40. When the material above the first edge 13 of the glass substrate 10 can have its thickness reduced by the provision of the first metal reinforcement structure 50, and when the material below the second edge 14 can have its thickness reduced by the provision of the second metal reinforcement structure 60, the thermal expansion stress borne above and below at least one side surface 15 of the glass substrate 10 will be weakened, thereby significantly reducing the possibility of seware defects occurring on at least one side surface 15 of the glass substrate 10. Furthermore, because this invention reduces the probability of seware defects before the glass substrate 10 is milled, even if the glass substrate 10 is subsequently milled to separate it from the core dielectric layer 20, the separated glass substrate 10 will almost certainly not have seware defects, thereby improving the yield of the glass substrate 10.
[0056] In one embodiment of this invention, the first dielectric layer 30 and the second dielectric layer 40 connecting the glass substrate 10 are both redistribution layers (RDLs) that power and connect to other circuits. For example, multiple redistribution layers may have ports on their outermost layers, and other circuits electrically connecting to these redistribution layers may be disposed on the outermost layer of the reinforced glass substrate structure of this invention and electrically connected to these ports. With the glass substrate 10 virtually free of seware defects, the reinforced glass substrate structure of this invention can serve as a stable, high-quality, and safe circuit substrate.
[0057] In another embodiment, the first dielectric layer 30, spaced apart from each other by the plurality of first metal rings 51, has a first dielectric layer thickness, and the second dielectric layer 40, spaced apart from each other by the plurality of second metal rings 61, has a second dielectric layer thickness. Both the first and second dielectric layer thicknesses are less than or equal to 10 micrometers (μm). This dielectric material thickness helps to prevent even minute cracks from developing into seware defects due to their small size and lack of stress. In other words, when both the first and second dielectric layer thicknesses are less than or equal to 10 micrometers, this invention can almost completely avoid the generation of seware defects, resulting in a particularly significant improvement. Furthermore, in one embodiment, the core dielectric layer 20 of this invention surrounds a copper foil substrate (CCL) of the glass substrate 10.
[0058] The detailed explanations of the above embodiments are intended only to explain the present invention so as to facilitate a better understanding of the present invention. However, these descriptions should not be construed as limiting the present invention for any reason. In particular, the various features described in different embodiments can be arbitrarily combined with each other to form other embodiments. Unless there is an explicit description to the contrary, these features should be understood to be applicable to any embodiment, and not limited to the described embodiments.
Claims
1. A reinforced glass substrate structure for improving edge defects, characterized in that, The reinforced glass substrate structure includes: A glass substrate has a first surface and a second surface opposite to each other, and the glass substrate further has at least one side surface; the first surface is surrounded by a first edge, and the second surface is surrounded by a second edge; A core dielectric layer is horizontally surrounding the glass substrate, and a gap is left between the core dielectric layer and at least one side surface of the glass substrate, the gap being filled with a gap dielectric layer; the core dielectric layer has a first core dielectric surface and a second core dielectric surface opposite to each other, and the core dielectric layer also has at least one core dielectric side surface; the first core dielectric surface is surrounded by a first core dielectric edge, and the second core dielectric surface is surrounded by a second core dielectric edge; A first dielectric layer is disposed on the first surface of the glass substrate and the first core dielectric surface of the core dielectric layer; a first circuit is provided in the first dielectric layer; A second dielectric layer is disposed on the second surface of the glass substrate and the second core dielectric surface of the core dielectric layer; a second circuit is provided in the second dielectric layer; A first metal reinforcement structure is disposed in the first dielectric layer corresponding to the first edge, and the first metal reinforcement structure extends into the first dielectric layer corresponding to the first core dielectric edge; and A second metal reinforcement structure is disposed in the second dielectric layer corresponding to the second edge, and the second metal reinforcement structure extends into the second dielectric layer corresponding to the second core dielectric edge; The first circuit and the second circuit are both multilayer circuits, and the first metal-reinforced structure and the second metal-reinforced structure are both multilayer structures. Each layer of the first circuit corresponds horizontally to each layer of the first metal-reinforced structure in the first dielectric layer, and each layer of the second circuit corresponds horizontally to each layer of the second metal-reinforced structure in the second dielectric layer.
2. The reinforced glass substrate structure for improving edge defects as described in claim 1, characterized in that, The first metal reinforcement structure includes a plurality of first metal rings, which are stacked on top of each other and spaced apart from each other and provided with the first dielectric layer. Each of the first metal rings is horizontally aligned with one of the circuit layers in the first circuit.
3. The reinforced glass substrate structure for improving edge defects as described in claim 2, characterized in that, The first metal-reinforced structure also includes: A first metal connecting ring is disposed in the first dielectric layer and perpendicularly connects a plurality of the first metal rings to the first surface of the glass substrate; and A third metal connecting ring is disposed in the first dielectric layer and perpendicularly connects the plurality of the first metal rings to the first core dielectric surface of the core dielectric layer.
4. The reinforced glass substrate structure for improving edge defects as described in claim 2 or 3, characterized in that, The first dielectric layer, which is spaced apart from each other among the plurality of first metal rings, has a first dielectric layer thickness, and the first dielectric layer thickness is less than or equal to 10 micrometers.
5. The reinforced glass substrate structure for improving edge defects as described in claim 1, characterized in that, The first dielectric layer is a rewiring layer.
6. The reinforced glass substrate structure for improving edge defects as described in claim 1, characterized in that, The second metal reinforcement structure includes a plurality of second metal rings, which are stacked on top of each other and spaced apart from each other and provided with the second dielectric layer; Each of the second metal rings is horizontally aligned with one of the layers of the second circuit.
7. The reinforced glass substrate structure for improving edge defects as described in claim 6, characterized in that, The second metal-reinforced structure also includes: A second metal connecting ring is disposed in the second dielectric layer and perpendicularly connects the plurality of second metal rings to the second surface of the glass substrate; and A fourth metal connecting ring is disposed in the first dielectric layer and perpendicularly connects the plurality of second metal rings to the second core dielectric surface of the core dielectric layer.
8. The reinforced glass substrate structure for improving edge defects as described in claim 6 or 7, characterized in that, The second dielectric layer, which is spaced apart from each other among the multiple second metal rings, has a second dielectric layer thickness that is less than or equal to 10 micrometers.
9. The reinforced glass substrate structure for improving edge defects as described in claim 1, characterized in that, The second dielectric layer is a rewiring layer.
10. The reinforced glass substrate structure for improving edge defects as described in claim 1, characterized in that, The core dielectric layer is a copper foil substrate.