Light spot homogenization semiconductor laser

Abstract

The utility model discloses a light spot homogenization semiconductor laser which comprises a chip base, a light emitting assembly, an optical fiber end and a fiber core, the light emitting assembly and the optical fiber end are arranged on the chip base, the fiber core is connected to the optical fiber end, and laser emitted by the light emitting assembly enters the fiber core; the fiber core comprises a linear section and a bent section, two ends of the bent section are respectively connected with the optical fiber end and one end of the linear section, the bent section is coated with a first coating layer, and the length of the first coating layer is smaller than that of the bent section. According to the invention, a lens mode is not added, the homogenization function is realized by bending the fiber core and reducing the length of the coating layer on the bending section, and the homogenization effect of the light spots generated by the semiconductor laser can be improved without increasing the cost.

Description

Technical Field

[0001] This application relates to the field of laser technology, specifically to a semiconductor laser with beam homogenization. Background Technology

[0002] Lasers possess excellent monochromaticity, directionality, and high brightness, leading to their widespread application in military and national economic sectors. However, in practical applications such as photolithography and welding, the processing effect varies at different locations on an unhomogenized laser spot. Therefore, the demand for laser spot homogenization technology is increasing. Currently, homogenization technology is mainly achieved through two methods: aspherical lenses and compound eye lens arrays. These two methods primarily rely on mirror processing, and the cost increases with increasing laser spot energy. Summary of the Invention

[0003] This application provides a semiconductor laser for spot homogenization, which can improve the homogenization effect of the spot generated by the semiconductor laser without increasing the cost.

[0004] In a first aspect, the spot homogenization semiconductor laser provided in this application includes a chip base, a light-emitting component, an optical fiber end, and a fiber core. The light-emitting component and the optical fiber end are disposed on the chip base, the fiber core is connected to the optical fiber end, and the laser emitted by the light-emitting component enters the fiber core.

[0005] The fiber core includes a straight segment and a curved segment. The two ends of the curved segment are respectively connected to the fiber end and one end of the straight segment. The curved segment is coated with a first coating layer, the length of which is less than the length of the curved segment.

[0006] Optionally, the length difference between the curved section and the first coating layer is not less than 5 mm.

[0007] Optionally, the length difference between the curved section and the first coating layer is 5 mm.

[0008] Optionally, the length difference between the curved section and the first coating layer is 13 mm.

[0009] Optionally, the curved segment is an arc, and the curvature of the curved segment is greater than a preset value.

[0010] Optionally, a second coating layer is applied to the straight line segment, the length of which is equal to the length of the straight line segment.

[0011] Optionally, the light-emitting component includes multiple first light-emitting modules, multiple second light-emitting modules, multiple first reflectors, multiple second reflectors, a third reflector, a beam combiner, and a focusing lens. The first light-emitting modules are used to emit laser light along a first direction. The first reflectors are used to reflect the light emitted by the first light-emitting modules in the first direction to a direction parallel to the second direction and into the beam combiner. The second light-emitting modules are used to emit laser light along the first direction. The second reflectors are used to reflect the light emitted by the second light-emitting modules in the first direction to a direction parallel to the second direction. The direction of the light reflected by the second reflectors is opposite to the direction of the light reflected by the first reflectors. The third reflectors are used to reflect the light reflected by the first reflectors to the first direction and into the beam combiner. The beam combiner combines the light into the focusing lens. The focusing lens focuses the light into the fiber core. The straight segment extends along the first direction, which is perpendicular to the second direction.

[0012] Optionally, the first light-emitting module includes a first light-emitting chip and a first collimating lens, and the second light-emitting module includes a second light-emitting chip and a second collimating lens. A plurality of the first light-emitting chips are arranged sequentially in the second direction, and a plurality of the second light-emitting chips are arranged sequentially in the second direction. The first collimating lens is located between the first light-emitting chip and the first reflector, and the second collimating lens is located between the second light-emitting chip and the second reflector.

[0013] Optionally, a plurality of second collimating mirrors, a third reflecting mirror, and a plurality of first reflecting mirrors are arranged sequentially in the second direction, and a plurality of second reflecting mirrors, a bundle combining assembly, a focusing mirror, and an optical fiber end are arranged sequentially in the second direction.

[0014] Optionally, the projections of the first light-emitting chip, the second light-emitting chip, the first collimating lens, and the second collimating lens along the second direction are arranged sequentially in the first direction.

[0015] In this application, compared to related technologies, the beam homogenization semiconductor laser includes a chip base, a light-emitting component, an optical fiber end cap, and a fiber core. The light-emitting component and the optical fiber end cap are disposed on the chip base, and the fiber core is connected to the optical fiber end cap. The laser emitted by the light-emitting component enters the fiber core. The fiber core includes a straight section and a curved section. The two ends of the curved section are respectively connected to the optical fiber end cap and one end of the straight section. A first coating layer is coated on the curved section, and the length of the first coating layer is less than the length of the curved section. This application achieves homogenization without adding a lens, by bending the fiber core and reducing the length of the coating layer on the curved section, thereby improving the beam homogenization effect of the semiconductor laser without increasing costs. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the overall structure of one embodiment of the spot homogenization semiconductor laser provided in this application.

[0018] Figure 2 yes Figure 1 Schematic diagram of the structure of region A in the middle;

[0019] Figure 3 This is a schematic diagram of the overall structure of another embodiment of the spot homogenization semiconductor laser provided in this application;

[0020] Figure 4 yes Figure 3 Schematic diagram of the structure of region B in the middle;

[0021] Figure 5 This is a schematic diagram of a comparative embodiment of the spot homogenization semiconductor laser provided in this application.

[0022] Figure 6 This is a schematic diagram of another comparative embodiment of the spot homogenization semiconductor laser provided in this application;

[0023] Figure 7 This is a beam intensity diagram of one embodiment of the beam homogenization semiconductor laser provided in this application.

[0024] Figure 8 This is a spot intensity diagram of another embodiment of the spot homogenization semiconductor laser provided in this application. Detailed Implementation

[0025] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0026] In the description of this application, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of the stated features. In the description of this application, "a plurality of" means two or more, unless otherwise explicitly specified.

[0027] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication between two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0028] See Figures 1-2 The light spot homogenization semiconductor laser 10 provided in this application includes a chip base 19, a light-emitting component, an optical fiber end 15, and a fiber core 17. The light-emitting component and the optical fiber end 15 are disposed on the chip base 19, and the fiber core 17 is connected to the optical fiber end 15. The laser emitted by the light-emitting component enters the fiber core 17. The fiber core 17 includes a straight segment 172 and a curved segment 171. The two ends of the curved segment 171 are respectively connected to the optical fiber end 15 and one end of the straight segment 172. A first coating layer 173 is coated on the curved segment 171, and the length of the first coating layer 173 is less than the length of the curved segment 171.

[0029] In this embodiment, the light-emitting component includes multiple first light-emitting modules, multiple second light-emitting modules, multiple first reflectors 113, multiple second reflectors 123, a third reflector 13, a beam combiner 14, and a focusing lens 16. The first light-emitting modules are used to emit laser light along a first direction F1. The first reflectors 113 are used to reflect the light emitted by the first light-emitting modules along the first direction F1 to a direction parallel to the second direction F2. The second light-emitting modules are used to emit laser light along the first direction F1. The second reflectors 123 are used to reflect the light emitted by the second light-emitting modules along the first direction F1 to a direction parallel to the second direction F2 and enter the beam combiner 14. The direction of the light reflected by the second reflectors 123 is opposite to the direction of the light reflected by the first reflectors 113. The third reflectors 13 are used to reflect the light reflected by the first reflectors 113 to the first direction F1 and enter the beam combiner 14. The beam combiner 14 combines the light into the focusing lens 16. The focusing lens 16 focuses the light into the fiber core 17. The straight segment 172 extends along the first direction F1, which is perpendicular to the second direction F2.

[0030] In this embodiment, the first light-emitting module includes a first light-emitting chip 111 and a first collimating lens 112, and the second light-emitting module includes a second light-emitting chip 121 and a second collimating lens 122. A plurality of first light-emitting chips 111 are arranged sequentially in the second direction F2, and a plurality of second light-emitting chips 121 are arranged sequentially in the second direction F2. The first collimating lens 112 is located between the first light-emitting chip 111 and the first reflector 113, and the second collimating lens 122 is located between the second light-emitting chip 121 and the second reflector 123.

[0031] In this embodiment, a plurality of second collimating mirrors 122, a third reflecting mirror 13, and a plurality of first reflecting mirrors 113 are arranged sequentially in the second direction F2, and a plurality of second reflecting mirrors 123, a bundle combining assembly 14, a focusing mirror 16, and an optical fiber end cap 15 are arranged sequentially in the second direction F2.

[0032] In this embodiment of the application, the projections of the first light-emitting chip 111, the second light-emitting chip 121, the first collimating lens 112, and the second collimating lens 122 along the second direction F2 are arranged sequentially on the first direction F1.

[0033] In this embodiment, the length difference between the curved segment 171 and the first coating layer 173 is not less than 5 mm. A second coating layer 174 is coated on the straight segment 172, and the length of the second coating layer 174 is equal to the length of the straight segment 172. The curved segment 171 is an arc, and the curvature of the curved segment 171 is greater than a preset value. Specifically, the preset value is 0 or 0.155.

[0034] In a specific embodiment, such as Figure 1 and Figure 2As shown, the length difference between the curved section 171 and the first coating layer 173 is 5 mm. The length of the second coating layer 174 is equal to the length of the straight section 172. That is, the fiber core 17 is curved, and 5 mm of the coating layer is peeled off from the curved section 171 of the fiber core 17.

[0035] In another specific embodiment, such as Figure 3 and Figure 4 As shown, the length difference between the curved section 171 and the first coating layer 173 is 13 mm. The length of the second coating layer 174 is equal to the length of the straight section 172. That is, the fiber core 17 is curved, and the coating layer peels off 13 mm from the curved section 171 of the fiber core 17.

[0036] To demonstrate the homogenization effect of this application, four types of spot homogenization semiconductor lasers 10 are provided for comparison.

[0037] Example 1: As Figure 1 and Figure 2 As shown, the length difference between the curved section 171 and the first coating layer 173 is 5 mm. The length of the second coating layer 174 is equal to the length of the straight section 172. That is, the fiber core 17 is curved, and 5 mm of the coating layer is peeled off from the curved section 171 of the fiber core 17.

[0038] Example 2: Figure 3 and Figure 4 As shown, the length difference between the curved section 171 and the first coating layer 173 is 13 mm. The length of the second coating layer 174 is equal to the length of the straight section 172. That is, the fiber core 17 is curved, and the coating layer peels off 13 mm from the curved section 171 of the fiber core 17.

[0039] Example 3: As Figure 5 As shown, the length difference between the curved segment 171 and the first coating layer 173 is 0. The length of the second coating layer 174 is equal to the length of the straight segment 172. That is, the fiber core 17 is curved, and the coating layer on the curved segment 171 of the fiber core 17 is completely retained.

[0040] Example 4: Figure 6 As shown, the length of the bent segment 171 is 0. The length of the second coating layer 174 is equal to the length of the straight segment 172. That is, the fiber core 17 is not bent, and the entire coating layer is retained.

[0041] The homogenization test results of the beam homogenization semiconductor laser 10 in Examples 1 to 4 are shown in Table 1. In Table 1, 0.95NA represents the numerical aperture of the output beam with 95% energy ratio, diameter represents the core diameter, uniformity represents the uniformity index, and ellipticity represents the curvature of the elliptical beam of the beam homogenization semiconductor laser 10.

[0042] Figure 7 This refers to the intensity value of the light spot in the beam homogenization semiconductor laser 10 of Example 2. Figure 8 It is the intensity value of the light spot of the light spot homogenizing semiconductor laser 10 in Example 3. Figure 7 and Figure 8 In the diagram, the horizontal and vertical axes represent the coordinates of the plane containing the light spot, and the vertical axis represents the intensity value of each point on the light spot.

[0043] According to Table 1, Figure 7 as well as Figure 8 It can be seen that the beam homogenizing semiconductor laser 10 in Example 2 has the best homogenization effect, while the beam homogenizing semiconductor laser 10 in Example 1 has the second best homogenization effect.

[0044] Table 1: Homogenization Test Results

[0045] Example Current 0.95NA diameter Uniformity ellipticity Example 4 3A 0.2 0.53 0.6577 0.0309 Example 1 3A 0.19 0.53 0.7206 0.0155 Example 2 3A 0.165 0.5194 0.7304 0.0236 Example 3 3A 0.19 0.53 0.7038 0.0166

[0046] Compared to related technologies, the beam homogenization semiconductor laser of this application includes a chip base, a light-emitting component, an optical fiber end cap, and a fiber core. The light-emitting component and the optical fiber end cap are disposed on the chip base, and the fiber core is connected to the optical fiber end cap. The laser emitted by the light-emitting component enters the fiber core. The fiber core includes a straight section and a curved section. The two ends of the curved section are respectively connected to the optical fiber end cap and one end of the straight section. A first coating layer is coated on the curved section, and the length of the first coating layer is less than the length of the curved section. This application achieves homogenization without adding a lens, by bending the fiber core and reducing the length of the coating layer on the curved section, thereby improving the beam homogenization effect of the semiconductor laser without increasing costs.

[0047] The above provides a detailed description of a spot homogenization semiconductor laser provided in this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

[0048] It should be noted that when the above embodiments of this application are applied to specific products or technologies, and user-related data is involved, user permission or consent is required, and the collection, use and processing of related data must comply with relevant laws, regulations and standards.

Claims

1. A semiconductor laser for beam homogenization, characterized in that, The beam homogenization semiconductor laser includes a chip base, a light-emitting component, an optical fiber end cap, and a fiber core. The light-emitting component and the optical fiber end cap are disposed on the chip base, and the fiber core is connected to the optical fiber end cap. The laser emitted by the light-emitting component enters the fiber core. The fiber core includes a straight segment and a curved segment. The two ends of the curved segment are respectively connected to the fiber end and one end of the straight segment. The curved segment is coated with a first coating layer, the length of which is less than the length of the curved segment.

2. The spot homogenization semiconductor laser according to claim 1, characterized in that, The length difference between the curved section and the first coating layer is not less than 5 mm.

3. The spot homogenization semiconductor laser according to claim 2, characterized in that, The length difference between the curved section and the first coating layer is 5 mm.

4. The spot homogenization semiconductor laser according to claim 2, characterized in that, The length difference between the curved section and the first coating layer is 13 mm.

5. The spot homogenization semiconductor laser according to claim 2, characterized in that, The curved segment is an arc, and the curvature of the curved segment is greater than a preset value.

6. The spot homogenization semiconductor laser according to claim 5, characterized in that, The straight line segment is coated with a second coating layer, the length of which is equal to the length of the straight line segment.

7. The spot homogenization semiconductor laser according to claim 6, characterized in that, The light-emitting component includes multiple first light-emitting modules, multiple second light-emitting modules, multiple first reflectors, multiple second reflectors, a third reflector, a beam combiner, and a focusing lens. The first light-emitting modules emit laser light along a first direction. The first reflectors reflect the light emitted by the first light-emitting modules in the first direction to a direction parallel to a second direction and into the beam combiner. The second light-emitting modules emit laser light along the first direction. The second reflectors reflect the light emitted by the second light-emitting modules in the first direction to a direction parallel to the second direction. The direction of the light reflected by the second reflectors is opposite to the direction of the light reflected by the first reflectors. The third reflectors reflect the light reflected by the first reflectors to the first direction and into the beam combiner. The beam combiner combines the light into the focusing lens, and the focusing lens focuses the light into the fiber core. The straight segment extends along the first direction, which is perpendicular to the second direction.

8. The spot homogenization semiconductor laser according to claim 7, characterized in that, The first light-emitting module includes a first light-emitting chip and a first collimating lens, and the second light-emitting module includes a second light-emitting chip and a second collimating lens. A plurality of the first light-emitting chips are arranged sequentially in the second direction, and a plurality of the second light-emitting chips are arranged sequentially in the second direction. The first collimating lens is located between the first light-emitting chip and the first reflector, and the second collimating lens is located between the second light-emitting chip and the second reflector.

9. The spot homogenization semiconductor laser according to claim 8, characterized in that, Multiple second collimating mirrors, the third reflecting mirror, and multiple first reflecting mirrors are arranged sequentially in the second direction, and multiple second reflecting mirrors, the bundle combining assembly, the focusing mirror, and the optical fiber end are arranged sequentially in the second direction.

10. The spot homogenization semiconductor laser according to claim 9, characterized in that, The first light-emitting chip, the second light-emitting chip, the first collimating lens, and the projection of the second collimating lens along the second direction are arranged sequentially in the first direction.

Images