Light emitting device

Abstract

The embodiment of the utility model discloses a light-emitting device, for example, comprising a first epitaxial structure which comprises an N-type GaN layer, a light-emitting layer and a P-type GaN layer which are arranged in sequence; the second epitaxial structure comprises an electron channel layer and a barrier layer which are arranged in sequence; and a connection layer; wherein the connection layer is connected between the first epitaxial structure and the second epitaxial structure, the material of the connection layer comprises GaN, and the thickness of the connection layer is 200 to 800 nanometers. According to the embodiment of the utility model, the GaN connecting layer is arranged to integrate the two epitaxial structures on one light-emitting device, so that the light-emitting device provided by the embodiment of the utility model not only realizes light emitting, but also realizes constant-current light emitting, and can more flexibly solve the problem that the head and the tail of an existing LED lamp head are uneven in light emitting brightness; and the two epitaxial structures are integrated on one light-emitting device, so that the light-emitting device provided by the embodiment of the utility model can be more flexibly applied to a light-emitting device needing constant current.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to a light-emitting device. Background Technology

[0002] With the development of semiconductor technology, LED (Light-emitting Diode) technology has become increasingly mature, but there is still room for improvement in many design details. For example, for LED light strip products with multiple LED strings connected in parallel on the market, when used in parallel over long distances, the voltage drop difference between the different LED strings at the beginning and end of the strip is too large due to the significant difference in distance from the power supply, which can lead to uneven brightness across the entire light strip. Utility Model Content

[0003] In view of at least some of the problems and deficiencies in the prior art, this utility model discloses a light-emitting device and a method for preparing the light-emitting device, so as to more flexibly solve the problem of uneven light emission brightness at the beginning and end of the existing LED light strip.

[0004] On one hand, the light-emitting device provided in the embodiments of this utility model includes, for example: a first epitaxial structure, including an N-type GaN layer, a light-emitting layer and a P-type GaN layer arranged sequentially; a second epitaxial structure, including an electron channel layer and a barrier layer arranged sequentially; and a connecting layer; wherein the connecting layer connects the first epitaxial structure and the second epitaxial structure, the material of the connecting layer includes GaN, and the thickness of the connecting layer is 200-800 nanometers.

[0005] This embodiment of the invention integrates two epitaxial structures onto a single light-emitting device by setting a GaN interconnect layer. This enables the light-emitting device provided by this embodiment to not only emit light but also achieve constant current emission, thereby solving the problem of uneven brightness at the beginning and end of existing LED light strips. Furthermore, by integrating two epitaxial structures onto a single light-emitting device, the light-emitting device provided by this embodiment can be more flexibly applied to light-emitting devices that require constant current.

[0006] On the other hand, the light-emitting device provided in this embodiment includes: a substrate, a connecting layer, a first epitaxial structure, and a second epitaxial structure; one of the first epitaxial structure and the second epitaxial structure is disposed between the substrate and the connecting layer, and the other of the first epitaxial structure and the second epitaxial structure is disposed on the side of the connecting layer away from the substrate; wherein, the roughness of the side of the connecting layer away from the substrate is less than the roughness of the side of the first epitaxial structure or the second epitaxial structure disposed on the substrate away from the substrate, and the thickness of the connecting layer is 200-800 nanometers.

[0007] As can be seen from the above, the above-mentioned technical features of this utility model can have one or more of the following beneficial effects: By setting a GaN connection layer, the embodiments of this utility model integrate two epitaxial structures onto a light-emitting device, so that the light-emitting device provided by the embodiments of this utility model not only realizes light emission but also realizes constant current light emission, which can more flexibly solve the problem of uneven light emission brightness at the head and tail of existing LED light strips. Furthermore, based on integrating two epitaxial structures onto a light-emitting device, the light-emitting device provided by the embodiments of this utility model can be more flexibly applied to light-emitting devices that require constant current. Attached Figure Description

[0008] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0009] Figure 1 This is a schematic diagram of the structure of the light-emitting device provided in an embodiment of the present invention.

[0010] Figure 2 This is a schematic diagram of the structure of the light-emitting device provided in the first embodiment of the present invention.

[0011] Figure 3 for Figure 2 A schematic diagram of the specific structure of the light-emitting device.

[0012] Figure 4 This is a schematic diagram of the structure of the light-emitting device provided in the second embodiment of the present invention.

[0013] Figure 5 for Figure 4 A schematic diagram of the specific structure of the light-emitting device.

[0014] Figure 6 A flowchart illustrating the fabrication method of the light-emitting device provided in the first embodiment of this utility model.

[0015] Figure 7 A flowchart illustrating the fabrication method of the light-emitting device provided in the second embodiment of this utility model. Detailed Implementation

[0016] To make the objectives, technical solutions, and advantages of this utility model clearer, the technical solutions of this utility model will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this utility model, and not all of them. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.

[0017] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this utility model are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms can be used interchangeably where appropriate so that the embodiments of the utility model described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0018] The directional terms used in the embodiments of this utility model, such as "up," "down," "front," "back," "left," "right," "inner," "outer," and "side," are only for reference to the accompanying drawings. Therefore, the directional terms used are for the purpose of explaining and understanding this utility model, and not for limiting this utility model. For the sake of understanding and ease of description, the dimensions and thicknesses of each component shown in the drawings are arbitrarily shown, but this utility model is not limited thereto. When a component, such as a layer, film, region, or substrate, is referred to as "on (another component)," the component may be directly on the other component, or there may be intermediate components. Furthermore, in the specification, "arranged sequentially (of several components)" means that these components have a relative arrangement order, and does not mean that these components must be connected to each other; there may be other intermediate components between these components.

[0019] Furthermore, the division of multiple embodiments in this utility model is only for the convenience of description and should not constitute a special limitation. Features in various embodiments can be combined and referenced in each other without contradiction.

[0020] See Figure 1This utility model embodiment provides, for example, a light-emitting device 10, comprising: a second epitaxial structure 500, a first epitaxial structure 300, and a connecting layer 400; wherein, the connecting layer 400 is connected between the second epitaxial structure 500 and the first epitaxial structure 300, the material of the connecting layer 400 includes GaN, and the thickness of the connecting layer is 200-800 nanometers. The first epitaxial structure 300 includes, for example, an N-type GaN layer 310, a light-emitting layer 330, and a P-type GaN layer 350 sequentially disposed, and the first epitaxial structure is, for example, a light-emitting diode epitaxial structure, which can realize LED light emission; the second epitaxial structure 500 includes, for example, an electron channel layer 510 and a barrier layer 530 sequentially disposed, which can realize constant current.

[0021] This embodiment of the invention integrates two epitaxial structures onto a single light-emitting device by setting a GaN interconnect layer. This enables the light-emitting device provided by this embodiment to not only emit light but also achieve constant current emission, thereby more flexibly solving the problem of uneven brightness at the beginning and end of existing LED light strips. Furthermore, by integrating two epitaxial structures onto a single light-emitting device, the light-emitting device provided by this embodiment can be more flexibly applied to light-emitting devices that require constant current.

[0022] The light-emitting device 10 will be illustrated below with specific embodiments.

[0023] [First Embodiment]

[0024] See Figure 2 The light-emitting device 10 provided in the first embodiment of this utility model includes, for example, a substrate 100, a buffer layer 200, a first epitaxial structure 300, a connecting layer 400, and a second epitaxial structure 500. The buffer layer 200 is disposed, for example, on one side of the substrate 100; the first epitaxial structure 300 is disposed, for example, on the side of the buffer layer 200 away from the substrate 100; the connecting layer 400 is disposed, for example, on the side of the first epitaxial structure 300 away from the buffer layer 200; and the second epitaxial structure 500 is disposed, for example, on the side of the connecting layer 400 away from the first epitaxial structure 300. The material of the connecting layer 400 includes GaN.

[0025] Specifically, the material of the substrate 100 is, for example, Al2O3, or for example, a sapphire substrate. AlN is deposited on the sapphire substrate by, for example, plasma-enhanced chemical vapor deposition, with the AlN having a thickness of, for example, 10 to 100 nanometers. The substrate is then heat-treated in a hydrogen atmosphere at 1000 to 1200°C for 8 to 12 minutes to obtain the substrate 100.

[0026] Further, see Figure 3The buffer layer 200 includes, for example, a first buffer layer 210 and a second buffer layer 220 disposed sequentially, with the first buffer layer 210 disposed on the substrate 100. For example, the material of the first buffer layer 210 is AlN and / or GaN, meaning the first buffer layer 210 is, for example, an AlN buffer layer, or a GaN buffer layer, or the first buffer layer 210 may include both an AlN buffer layer and a GaN buffer layer, with the GaN buffer layer disposed, for example, on the side of the AlN buffer layer away from the substrate 100. The thickness of the AlN buffer layer is, for example, 1–100 nanometers. The presence of an AlN buffer layer helps to obtain GaN materials with higher crystal quality and higher resistivity. Specifically, compared to the substrate 100 (sapphire substrate), the lattice mismatch and thermal expansion coefficient mismatch between AlN and GaN are smaller, resulting in the epitaxial growth of GaN on the AlN surface. The resulting GaN material has a lower XRD (102) / XRD (002) ratio, a smoother surface, and higher resistivity. Wherein, XRD(102) represents the characteristic peak value of the GaN material 102 crystal plane in the XRD diffraction pattern, and XRD(002) represents the characteristic peak value of the GaN material 002 crystal plane in the XRD diffraction pattern. Furthermore, setting a GaN buffer layer at a low temperature (e.g., 500℃~1000℃) helps release stress, thereby effectively preventing cracks from appearing on the surface of the light-emitting device. The first buffer layer 210 is used, for example, to buffer the problem of lattice mismatch between GaN and Al2O3 in the substrate 100. The material of the second buffer layer 220 is, for example, undoped GaN, and the thickness of the second buffer layer 220 is, for example, 2~4 micrometers. The second buffer layer 220 is, for example, a high-resistivity layer structure, for example, a resistance of 1.17e11Ω / □. The second buffer layer 220 is used, for example, to obtain GaN material with better crystal quality.

[0027] As stated above, see also Figure 3 The first epitaxial structure 300 includes, for example, an N-type GaN layer 310, a stress-adjusting layer 320, a light-emitting layer 330, an electron-blocking layer 340, and a P-type GaN layer 350 arranged sequentially, wherein the N-type GaN layer 310 is disposed, for example, on the side of the second buffer layer 220 away from the first buffer layer 210.

[0028] Specifically, the material of the N-type GaN layer 310 includes, for example, Si-doped GaN, and the doping concentration of the N-type GaN layer 310 ranges from 1e19cm⁻¹. -3 ~3e19cm -3 The thickness of the N-type GaN layer 310 is, for example, 1 to 4 micrometers. The material of the stress-regulating layer 320 includes, for example, Si-doped GaN, and the doping concentration of the stress-regulating layer 320 ranges from 1e17cm. -3 ~8e18cm -3The light-emitting layer 330 is, for example, a superlattice multiple quantum well light-emitting layer, and for example, includes InGaN and GaN lattices. The stress-adjusting layer 320 helps to obtain InGaN materials with better crystal quality. The electron-blocking layer 340 is made of, for example, AlGaN, and its thickness is, for example, 10–30 nanometers. The p-type GaN layer 350 is made of, for example, Mg-doped GaN, and the doping concentration of the p-type GaN layer 350 ranges from 1e18 cm⁻¹. -3 ~2e20cm -3 The thickness of the p-type GaN layer 350 is, for example, 30 to 500 nanometers.

[0029] As stated above, see also Figure 3 The interconnect layer 400 is disposed, for example, on the side of the p-type GaN layer 350 away from the electron blocking layer 340. The interconnect layer 400 is, for example, a flat, high-resistivity layer structure. For example, the roughness of the p-type GaN layer 350 is, for example, 0.3–0.5 nm, and the roughness of the interconnect layer 400 is, for example, less than 0.3 nm. Preferably, the roughness of the interconnect layer 400 is, for example, 0.22 nm, and the resistance Rs of the interconnect layer 400 is, for example, greater than 1e9 Ω / □. The material of the interconnect layer 400 includes GaN, and the thickness of the interconnect layer 400 is, for example, greater than 100 nm. Preferably, the thickness of the interconnect layer 400 is, for example, 200–800 nm.

[0030] In one specific embodiment, the connecting layer 400 is an Fe and / or C-doped GaN layer, wherein the doping concentration of the connecting layer 400 is greater than 8e18cm. -3 The resistance of the interconnect layer 400 is improved by doping it with Fe and / or C. In another specific embodiment, the interconnect layer 400 is, for example, an undoped GaN layer, which can be grown directly under external conditions to obtain a flat, high-resistivity interconnect layer 400. For example, the V / III ratio (NH3 / Ga ratio) and the growth temperature of the interconnect layer 400 can be optimized, such as a V / III ratio of 900 to 2000 and a growth temperature of 1050°C to 1100°C, to obtain an undoped GaN interconnect layer 400 with flat, high-resistivity characteristics.

[0031] Specifically, after the first epitaxial structure 300 is grown, its surface portion (i.e., the P-type GaN layer 350) is rough, and this roughness affects the mobility of the second epitaxial structure 500. This embodiment provides a flat interconnect layer 400 to smooth the surface growth. Furthermore, the high-resistance interconnect layer 400 can prevent leakage current in the second epitaxial structure, thus affecting the light emission of the light-emitting device. In addition, by providing the interconnect layer 400, Mg in the P-type GaN layer 350 can also be prevented from diffusing into the second epitaxial structure 500.

[0032] Furthermore, see also Figure 3 The second epitaxial structure 500 includes, for example, an electron channel layer 510, an isolation layer 520, and a barrier layer 530 arranged sequentially. The electron channel layer 510 is, for example, disposed on the side of the connection layer 240 away from the P-type GaN layer 350.

[0033] The electron channel layer 510 is made of materials such as GaN or InGaN, and its thickness is, for example, 100–300 nanometers. The isolation layer 520 is made of materials such as AlN, and its thickness is, for example, 1–2 nanometers. The isolation layer 520 is provided to improve the light-emitting performance of the second epitaxial structure 500. The barrier layer 530 is made of materials such as AlGaN, and the proportion of aluminum in the barrier layer 530 is 20%–30%. The thickness of the barrier layer 530 is, for example, 15–30 nanometers. The AlGaN in the barrier layer 530 forms a heterostructure with the GaN in the electron channel layer 510, thereby obtaining a 2-DEG (Two-dimensional electron gas). In this way, the light-emitting device 10 provided in this embodiment of the present invention achieves a constant current light emission effect.

[0034] By placing an isolation layer 520 (a thin AlN layer) between the barrier layer 530 (AlGaN) and the electron channel layer 510 (GaN), the electron density of the two-dimensional electron gas can be increased, the resistance reduced, the mobility increased, and a larger current achieved. Specifically, the effective ΔEc (cathodic polarization value) caused by the polarization effect of the AlGaN / AlN / GaN structure is increased, resulting in a deeper quantum well and thus a higher electron concentration; the penetration of the two-dimensional electron gas into the barrier layer 530 is significantly reduced, thereby reducing alloy disorder scattering and improving mobility. In other words, the AlGaN / AlN / GaN heterojunction formed by inserting an AlN thin layer at the AlGaN / GaN heterojunction interface is superior to the conventional AlGaN / GaN heterojunction.

[0035] Furthermore, the light-emitting device 10 also includes, for example, a surface protective layer 600, which includes, for example, a protective layer and / or a passivation layer. For example, a protective layer may be provided on the side of the barrier layer 530 away from the isolation layer 520, the material of the protective layer being, for example, GaN, and the thickness of the protective layer being, for example, 2 nanometers; or a passivation layer may be provided on the side of the barrier layer 530 away from the isolation layer 520, the material of the passivation layer being, for example, SiN, and the thickness of the passivation layer being, for example, 10 to 50 nanometers; or a protective layer may be provided on the side of the barrier layer 530 away from the isolation layer 520, and a passivation layer may be provided on the protective layer.

[0036] In summary, by setting a flat and high-resistance GaN interconnect layer, this utility model embodiment avoids affecting the mobility of the second epitaxial structure, prevents leakage of the second epitaxial structure, and prevents Mg from diffusing from the first epitaxial structure into the second epitaxial structure. This integrates two epitaxial structures onto a single light-emitting device, enabling the light-emitting device provided by this utility model embodiment to not only emit light but also achieve constant current emission. This provides a more flexible solution to the problem of uneven brightness at the beginning and end of existing long-line LED filaments / strips. Furthermore, by integrating two epitaxial structures onto a single light-emitting device, the light-emitting device provided by this utility model embodiment can be more flexibly applied to light-emitting devices requiring constant current.

[0037] [Second Embodiment]

[0038] Compared with the first embodiment, the second embodiment uses the same concept for the light-emitting device 10, but the specific structural settings and parameters of some layers are slightly different. The differences between the second and first embodiments will be illustrated below, while the similarities will not be repeated.

[0039] For details, see Figure 4 The light-emitting device 10 provided in the second embodiment of this utility model includes, for example, a substrate 100, a buffer layer 200, a second epitaxial structure 500, a connecting layer 400, and a first epitaxial structure 300. The buffer layer 200 is disposed, for example, on one side of the substrate 100; the second epitaxial structure 500 is disposed, for example, on the side of the buffer layer 200 away from the substrate 100; the connecting layer 400 is disposed, for example, on the side of the second epitaxial structure 500 away from the buffer layer 200; and the first epitaxial structure 300 is disposed, for example, on the side of the connecting layer 400 away from the second epitaxial structure 500.

[0040] In the second embodiment, the second buffer layer 220 may differ from that in the first embodiment. For example, the second buffer layer 220 may be a high-resistivity layer structure, with a resistance of 1.17e11 Ω / □. The material of the second buffer layer may be GaN, and the high-resistivity second buffer layer 220 may be obtained by growing it under conditions such as epitaxial GaN flow field and temperature field. Alternatively, the material of the second buffer layer 220 may be Fe or C-doped GaN, wherein the doping concentration is greater than 1e19 cm⁻¹. -3 The thickness of the second buffer layer 220 is, for example, 2 to 4 micrometers. The second buffer layer 220 is grown, for example, on the side of the first buffer layer 321 away from the substrate 100 at a temperature of 1000 to 1150°C. By setting a high-resistance second buffer layer 220, the breakdown voltage can be increased, preventing leakage of the light-emitting device 10.

[0041] Furthermore, see also Figure 5The second epitaxial structure 500 includes, for example, an electron channel layer 510, an isolation layer 520, and a barrier layer 530 arranged sequentially. The electron channel layer 510 is disposed, for example, on the side of the second buffer layer 220 away from the first buffer layer 210, and the material of the barrier layer 530 includes AlGaN.

[0042] As described above, the specific parameters of the connecting layer 400 in the second embodiment differ from those in the first embodiment. The connecting layer 400 is, for example, disposed on the side of the barrier layer 530 away from the isolation layer 520. The material of the connecting layer 400 includes GaN, and the connecting layer 400 is, for example, a flat, high-resistivity layer structure. If the barrier layer 530 has a high Al content (aluminum content greater than 25%) or a thicker barrier layer 530 (thickness greater than 9 nanometers), the epitaxial surface of the second epitaxial structure 500 is prone to becoming rough. For example, the roughness of the side of the second epitaxial structure 500 away from the substrate 100 is, for example, 0.3–0.5 nanometers, and the roughness of the connecting layer 400 is, for example, less than 0.3 nanometers. Preferably, the roughness of the connecting layer 400 is, for example, 0.22 nanometers, and the resistance Rs of the connecting layer 400 is, for example, greater than 1e9Ω / □. Furthermore, the thickness of the connecting layer 400 is, for example, greater than 100 nanometers, and preferably, 200 to 800 nanometers. If the thickness of the connecting layer 400 is less than 100 nanometers, insufficient thickness may cause Si in the first epitaxial structure 300 to penetrate into the second epitaxial structure 500, resulting in current collapse in the second epitaxial structure 500. If the thickness of the connecting layer 400 is greater than 800 nanometers, excessive thickness may cause excessive warping. The connecting layer 400 is grown, for example, at a temperature of 1000 to 1100°C on the side of the barrier layer 530 away from the substrate 100. The connecting layer 400 grown at high temperature can act as a barrier, thereby reducing dislocation pits, preventing leakage, and improving the electrical performance of the light-emitting device 10.

[0043] Furthermore, see also Figure 5 The first epitaxial structure 300 includes, for example, an N-type GaN layer 310, a stress-adjusting layer 320, a light-emitting layer 330, an electron-blocking layer 340, and a P-type GaN layer 350 arranged sequentially, wherein the N-type GaN layer 310 is disposed, for example, on the side of the connecting layer 400 away from the barrier layer 530.

[0044] In summary, by setting the thickness of the connecting layer to be greater than 100 nanometers, this embodiment of the present invention avoids the current collapse effect of the second epitaxial structure caused by the Si in the first epitaxial structure 300 penetrating into the second epitaxial structure due to insufficient thickness of the connecting layer, and also avoids warping caused by excessive thickness of the connecting layer. Furthermore, the connecting layer grown at high temperature can act as a barrier, thereby reducing dislocation pits and preventing leakage, thus improving the electrical performance of the light-emitting device 10. In this way, two epitaxial structures are integrated into one light-emitting device, enabling the light-emitting device provided by this embodiment of the present invention to not only emit light but also achieve constant current emission. This can more flexibly solve the problem of uneven brightness at the beginning and end of existing long-line LED filaments / strips. Moreover, by integrating two epitaxial structures into one light-emitting device, the light-emitting device provided by this embodiment of the present invention can be more flexibly applied to light-emitting devices that require constant current.

[0045] In addition, see Figure 6 The following is a method for fabricating the light-emitting device 10 provided in the first embodiment of this application. The fabrication method includes, for example:

[0046] S11: Provides a substrate;

[0047] S13: An N-type GaN layer, a light-emitting layer, and a P-type GaN layer are sequentially grown on the substrate;

[0048] S15: Grow a connection layer on the P-type GaN layer;

[0049] S17: An electron channel layer, an isolation layer, and a barrier layer are sequentially grown on the connection layer.

[0050] Specifically, step S11 includes: growing AlN on a sapphire substrate using plasma-enhanced chemical vapor deposition and heat-treating it in a hydrogen environment at 1000-1200°C for 8-12 minutes to obtain a substrate substrate.

[0051] Step S12 is included between steps S11 and S13, and step S12 specifically includes:

[0052] S121: An AlN buffer layer is grown on a substrate using metal-organic chemical vapor deposition.

[0053] S123: Low-temperature growth of GaN buffer layer on AlN buffer layer;

[0054] S125: A second buffer layer is grown on the GaN buffer layer at a temperature of 1000–1150 °C.

[0055] As described above, step S13 specifically includes:

[0056] S131: An N-type GaN layer is grown on the second buffer layer;

[0057] S132: A stress-regulating layer is grown on an N-type GaN layer at a temperature of 750–950 °C;

[0058] S133: Grow a light-emitting layer on the stress-adjusting layer;

[0059] S134: An electron blocking layer is grown on the light-emitting layer;

[0060] S135: A P-type GaN layer is grown on an electron blocking layer.

[0061] In step S133, a light-emitting layer is grown on the stress-modulated layer in an environment where N2 (nitrogen) is the main carrier gas and TMGa / TEGa (trimethylgallium / triethylgallium), TMAl (trimethylaluminum), TMIn (trimethylindium) and NH3 (ammonia) are used as Ga source, Al source, In source and N source, respectively. The material of the connecting layer includes Fe and / or C-doped GaN to obtain a flat connecting layer with high resistance.

[0062] Step S15 specifically involves growing the connecting layer on the barrier layer under the conditions of the epitaxial GaN flow field and temperature field.

[0063] Furthermore, step S17 specifically includes:

[0064] S171: An electron channel layer is grown on the connecting layer;

[0065] S173: An isolation layer is grown on the electron channel layer;

[0066] S175: Growing a barrier layer on the isolation layer.

[0067] In addition, step S19 is included after step S17, and step S19 specifically includes:

[0068] S191: A protective layer is grown on the barrier layer;

[0069] S193: A passivation layer is grown on the protective layer.

[0070] In addition, see Figure 7 Furthermore, a method for fabricating the light-emitting device 10 provided in the second embodiment of this application is also provided, the fabrication method including, for example:

[0071] S21: Provides a substrate;

[0072] S23: An electron channel layer, an isolation layer, and a barrier layer are sequentially grown on the substrate;

[0073] S25: Growing a connection layer on the barrier layer;

[0074] S27: An N-type GaN layer, a light-emitting layer, and a P-type GaN layer are sequentially grown on the connecting layer.

[0075] Step S21 is, for example, the same as step S11.

[0076] Step S22 is included between steps S21 and S23, and step S22 specifically includes:

[0077] S221: An AlN buffer layer is grown on a substrate using metal-organic chemical vapor deposition.

[0078] S223: Low-temperature growth of GaN buffer layer on AlN buffer layer;

[0079] S225: A second buffer layer is grown on the GaN buffer layer at a temperature of 1000-1150℃ and under the conditions of epitaxial GaN flow field and temperature field.

[0080] As described above, step S23 specifically includes:

[0081] S231: An electron channel layer is grown on the second buffer layer;

[0082] S233: An isolation layer is grown on the electron channel layer;

[0083] S235: Growing a barrier layer on the isolation layer.

[0084] Step S25 specifically includes: growing the connecting layer on the barrier layer at a temperature of 1000 to 1100°C.

[0085] Step S27 specifically includes:

[0086] S271: An N-type GaN layer is grown on the interconnect layer;

[0087] S272: A stress-regulating layer is grown on an N-type GaN layer at a temperature of 750–950 °C;

[0088] S273: Grow a light-emitting layer on the stress-adjusting layer;

[0089] S274: An electron blocking layer is grown on the light-emitting layer;

[0090] S275: A P-type GaN layer is grown on an electron blocking layer.

[0091] It is understood that the foregoing embodiments are merely illustrative examples of this utility model. Provided that the technical features do not conflict, the structure is not contradictory, and the purpose of this utility model is not violated, the technical solutions of the various embodiments can be arbitrarily combined and used.

[0092] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model, and not to limit it. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this utility model.

Claims

1. A light-emitting device, characterized in that, include: The first epitaxial structure includes an N-type GaN layer, a light-emitting layer, and a P-type GaN layer arranged sequentially. The second epitaxial structure includes an electron channel layer and a barrier layer arranged sequentially; and Connection layer; The connecting layer is located between the first epitaxial structure and the second epitaxial structure. The material of the connecting layer includes GaN, and the thickness of the connecting layer is 200–800 nanometers.

2. The light-emitting device as described in claim 1, characterized in that, Also includes: Substrate; The first epitaxial structure is disposed on one side of the substrate, the connecting layer is disposed on the side of the first epitaxial structure away from the substrate, and the second epitaxial structure is disposed on the side of the connecting layer away from the first epitaxial structure.

3. The light-emitting device as described in claim 2, characterized in that, The connecting layer is an undoped GaN layer; or, the connecting layer is an Fe and / or C doped GaN layer.

4. The light-emitting device as described in claim 3, characterized in that, The N-type GaN layer is disposed on one side of the substrate, the light-emitting layer is disposed on the side of the N-type GaN layer away from the substrate, the P-type GaN layer is disposed on the side of the light-emitting layer away from the N-type GaN layer, and the interconnect layer is disposed on the side of the P-type GaN layer away from the light-emitting layer. The material of the p-type GaN layer includes Mg-doped GaN; The electron channel layer is disposed on the side of the interconnect layer away from the p-type GaN layer, and the barrier layer is disposed on the side of the electron channel layer away from the interconnect layer; wherein, the material of the electron channel layer includes GaN or InGaN.

5. The light-emitting device as described in claim 1, characterized in that, Also includes: Substrate; The second epitaxial structure is disposed on one side of the substrate, the connecting layer is disposed on the side of the second epitaxial structure away from the substrate, and the first epitaxial structure is disposed on the side of the connecting layer away from the second epitaxial structure.

6. The light-emitting device as described in claim 5, characterized in that, The barrier layer is disposed on one side of the substrate, the electron channel layer is disposed on the side of the barrier layer away from the substrate, and the connection layer is disposed on the side of the electron channel layer away from the barrier layer; wherein, the material of the barrier layer includes AlGaN.

7. The light-emitting device as described in claim 6, characterized in that, The N-type GaN layer is disposed on the side of the interconnect layer away from the barrier layer, the light-emitting layer is disposed on the side of the N-type GaN layer away from the interconnect layer, and the P-type GaN layer is disposed on the side of the light-emitting layer away from the N-type GaN layer; the material of the N-type GaN layer includes Si-doped GaN.

8. The light-emitting device according to any one of claims 1 to 7, characterized in that, The thickness of the connecting layer is greater than 100 nanometers.

9. The light-emitting device according to any one of claims 1 to 7, characterized in that, The second epitaxial structure further includes an isolation layer, which is connected between the electron channel layer and the barrier layer. The isolation layer is made of AlN and has a thickness of 1 to 2 nanometers.

10. A light-emitting device, characterized in that, include: Substrate, interconnect layer, first epitaxial structure, and second epitaxial structure; One of the first epitaxial structure and the second epitaxial structure is disposed between the substrate and the interconnect layer, and the other of the first epitaxial structure and the second epitaxial structure is disposed on the side of the interconnect layer away from the substrate; Wherein, the roughness of the side of the connecting layer away from the substrate is less than the roughness of the side of the first epitaxial structure or the second epitaxial structure disposed on the substrate away from the substrate, and the thickness of the connecting layer is 200 to 800 nanometers.

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