Perovskite quantum dot light emitting diode device

Abstract

The utility model discloses a perovskite quantum dot light-emitting diode device, and belongs to the technical field of light-emitting diode devices. The perovskite quantum dot light-emitting diode device comprises a substrate, a hole transport layer, a perovskite quantum dot layer, an electron transport layer and an electrode which are stacked from bottom to top, a conductive substrate is arranged on the substrate, and a light-emitting diode is connected between the conductive substrate and the electrode through a metal wire. In the device structure, the substrate, the hole transport layer, the perovskite quantum dot layer, the electron transport layer and the electrode form a complete perovskite quantum dot battery device, and the perovskite quantum dot battery device generates current to drive the light-emitting diode between the conductive substrate and the electrode to work, so that the perovskite quantum dot light-emitting diode device is formed. According to the utility model, the perovskite quantum dot material is used as a power supply to realize power generation, an external power supply is not needed, the structure is simple, the cost is low, repeated use is realized, and energy is saved.

Description

Technical Field

[0001] This utility model relates to the field of light-emitting diode (LED) device technology, specifically to a perovskite quantum dot LED device. Background Technology

[0002] Environment and energy are two major problems facing humanity in the 21st century that urgently need to be solved. Developing new energy sources and effectively utilizing existing energy sources are effective means to address these issues. Perovskite quantum dot optoelectronic devices, as one of the most promising semiconductor materials, have attracted widespread attention from researchers worldwide. Perovskite nanocrystals, also known as colloidal quantum dots or perovskite quantum dots, are a novel solution-processable optoelectronic material that combines the advantages of quantum dots and halide perovskites. They possess characteristics such as low cost, high light absorption coefficient, controllable emission wavelength, and narrow emission wavelength half-width at half-maximum, making them highly promising for applications in electroluminescence. Currently, existing perovskite-based light-emitting diodes (LEDs) require an external power supply, which is inconvenient for emergency use and also leads to complex structures and high costs. Utility Model Content

[0003] In order to overcome the shortcomings of the existing technology, the purpose of this utility model is to provide a perovskite quantum dot light-emitting diode device. This light-emitting diode device uses perovskite quantum dot material as a power source to generate electricity, without the need for an external power source. It has a simple structure, low cost, is reusable, and saves energy.

[0004] To solve the above problems, the technical solution adopted by this utility model is as follows:

[0005] A perovskite quantum dot light-emitting diode device includes a substrate, a hole transport layer, a perovskite quantum dot layer, an electron transport layer, and electrodes stacked from bottom to top. A conductive substrate is disposed on the substrate, and the light-emitting diode is connected to the electrodes via a metal wire.

[0006] In a preferred embodiment of this utility model, the substrate is a glass substrate.

[0007] In a preferred embodiment of this invention, the conductive substrate is fluorine-doped tin oxide (FTO) or indium tin oxide (ITO).

[0008] In a preferred embodiment of this invention, the hole transport layer is a PEDOT-PSS layer.

[0009] In a preferred embodiment of this invention, the perovskite quantum dot layer is an FAPbBr3 layer.

[0010] In a preferred embodiment of this invention, the electron transport layer is a TPBi layer, which is a 2*10 layer. -4 It is prepared by thermal evaporation under high vacuum conditions. More preferably, the thickness of the electron transport layer is 40 nm.

[0011] In a preferred embodiment of this invention, the electrode is a LiF electrode or an Al electrode. More preferably, the thickness of the LiF electrode is 100 nm; the thickness of the Al electrode is 100 nm.

[0012] Compared with the prior art, the beneficial effects of this utility model are as follows:

[0013] The perovskite quantum dot light-emitting diode (LED) device structure provided by this invention comprises a substrate, a hole transport layer, a perovskite quantum dot layer, an electron transport layer, and electrodes, forming a complete perovskite quantum dot battery device. The current generated by this device drives the LED between the conductive substrate and the electrodes, thus forming a perovskite quantum dot LED device. This invention uses perovskite quantum dot material as a power source to achieve power generation, eliminating the need for an external power supply. It features a simple structure, low cost, reusability, and energy conservation. Attached Figure Description

[0014] Figure 1 This is a schematic diagram of the structure of the perovskite quantum dot light-emitting diode device described in this utility model;

[0015] Figure 2 This is a schematic diagram of the structure of the perovskite quantum dot light-emitting diode device according to an embodiment of the present invention;

[0016] Explanation of reference numerals in the attached figures: 1. Substrate; 2. Hole transport layer; 3. Perovskite quantum dot layer; 4. Electron transport layer; 5. Electrode; 6. Conductive substrate; 7. Light-emitting diode. Detailed Implementation

[0017] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments.

[0018] like Figure 1As shown, the perovskite quantum dot light-emitting diode device of this invention includes a substrate 1, a hole transport layer 2, a perovskite quantum dot layer 3, an electron transport layer 4, and an electrode 5 stacked from bottom to top. The substrate 1, hole transport layer 2, perovskite quantum dot layer 3, electron transport layer 4, and electrode 5 constitute a complete perovskite quantum dot battery device. A conductive substrate 6 is stacked on the substrate 1, and a light-emitting diode 7 is connected between the conductive substrate 6 and the electrode 5. The perovskite quantum dot battery device generates current to drive the light-emitting diode 7 between the conductive substrate 6 and the electrode 5, thus forming a perovskite quantum dot light-emitting diode device. Therefore, this invention uses perovskite quantum dot material as a power source to generate electricity, eliminating the need for an external power source. It achieves the integration of a perovskite quantum dot battery device and a light-emitting diode device, resulting in a simple structure, low cost, reusability, and energy saving.

[0019] In some preferred embodiments, such as Figure 2 As shown, in this perovskite quantum dot light-emitting diode device, substrate 1 is a glass substrate, conductive substrate 6 is FTO or ITO, and hole transport layer 2 is a PEDOT-PSS material layer. Perovskite quantum dot layer 3 is a FAPbBr3 material layer. The performance of perovskite quantum dot layer 3 can be adjusted by controlling its concentration, such as adjusting the FAPbBr3 concentration to 10 mg / ml to 40 mg / ml. Electron transport layer 4 is a 2*10... -4 The TPBi layer is obtained by thermal evaporation under high vacuum conditions; preferably, the thickness of the electron transport layer 4 is 40 nm. Electrode 5 is either a LiF electrode 5 or an Al electrode 5, wherein the thickness of the LiF electrode 5 is 100 nm, and the thickness of the Al electrode 5 is 100 nm. The perovskite quantum dot light-emitting diode 7 device of this embodiment is fabricated according to the following method:

[0020] S1. Use deionized water, acetone, and isopropanol to ultrasonically clean the substrate 1 and conductive substrate 6 for 15 minutes each, followed by ultraviolet ozone ion cleaning for 30 minutes.

[0021] S2. On the substrate 1 prepared in S1, spin-coating of PEDOT:PSS material layer and perovskite quantum dot layer 3 are performed sequentially to obtain hole transport layer 2 and perovskite quantum dot layer 3 respectively; conductive substrate 6 is composited on other areas of substrate 1.

[0022] S3, on the perovskite quantum dot layer 3 prepared in S2, respectively, 2*10 -4 Under high vacuum conditions, TPBi layer (40 nm) and LiF / Al (100 nm / 100 nm) electrodes were prepared by thermal evaporation to obtain perovskite quantum dot battery devices.

[0023] S4. Using metal wires, connect the electrodes 5 and conductive substrate 6 in the perovskite quantum dot battery device to the positive and negative terminals of the light-emitting diode 7 respectively, thereby driving the diode to work and finally obtaining the perovskite quantum dot light-emitting diode device.

[0024] The above embodiments are merely preferred embodiments of this utility model and should not be construed as limiting the scope of protection of this utility model. Any non-substantial changes and substitutions made by those skilled in the art based on this utility model shall fall within the scope of protection claimed by this utility model.

Claims

1. A perovskite quantum dot light-emitting diode device, characterized in that: It includes a substrate, a hole transport layer, a perovskite quantum dot layer, an electron transport layer, and electrodes stacked from bottom to top; a conductive substrate is disposed on the substrate, and a light-emitting diode is connected between the conductive substrate and the electrodes through a metal wire.

2. The perovskite quantum dot light-emitting diode device according to claim 1, characterized in that: The substrate is a glass substrate.

3. The perovskite quantum dot light-emitting diode device according to claim 1, characterized in that: The conductive substrate is fluorine-doped tin oxide or indium tin oxide.

4. The perovskite quantum dot light-emitting diode device according to claim 1, characterized in that: The hole transport layer is the PEDOT-PSS layer.

5. The perovskite quantum dot light-emitting diode device according to claim 1, characterized in that: The perovskite quantum dot layer is an FAPbBr3 layer.

6. The perovskite quantum dot light-emitting diode device according to claim 1, characterized in that: The electron transport layer is a TPBi layer.

7. The perovskite quantum dot light-emitting diode device according to claim 6, characterized in that: The thickness of the electron transport layer is 40 nm.

8. The perovskite quantum dot light-emitting diode device according to claim 1, characterized in that: The electrode is a LiF electrode or an Al electrode.

9. The perovskite quantum dot light-emitting diode device according to claim 8, characterized in that: The thickness of the LiF electrode is 100 nm; the thickness of the Al electrode is 100 nm.

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