Broadband X-waveband miniaturized solid-state amplifier module

By employing a U-shaped trace design combining SMT and gold wire bonding in the solid-state amplifier module, the problems of increased thermal resistance and complex debugging in traditional solid-state amplifier modules are solved, achieving miniaturization and simplified operation.

CN223652238UActive Publication Date: 2025-12-09HUNAN SIBEITU TECH CO LTD
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Patent Information

Application Number
CN202423269639.8
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-12-30
Publication Date
2025-12-09
Estimated Expiration
2034-12-30

AI Technical Summary

Technical Problem

Traditional solid-state amplifier modules suffer from increased thermal resistance leading to larger size, complex debugging, and high operational difficulty, especially affecting system performance in high-power signal transmission.

Method used

The front-end RF link adopts SMT method, and the final stage power amplifier adopts gold wire bonding method. The thermal resistance and overall size are reduced by combining U-shaped traces and control modules. At the same time, the final stage power amplifier and the second isolator form a separate module, which is convenient for debugging and replacement.

Benefits of technology

A miniaturized solid-state amplifier module has been achieved, reducing thermal resistance and debugging complexity, and improving ease of operation and system performance.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a broadband X wave band miniaturized solid-state amplifier module, the input end of a preceding stage radio frequency link receives an electric signal, the output end of the preceding stage radio frequency link is electrically connected with the input end of a final stage micro-assembly module, and the output end of the final stage micro-assembly module is used for outputting the electric signal; and the preceding-stage radio frequency link and the final-stage micro-assembly module are both bidirectionally and electrically connected with the control module. According to the utility model, the front-stage radio frequency link adopts an SMT mode, the debugging operability of the front-stage radio frequency link and the diversity of device selection are increased, and the final-stage power amplifier and the second isolator behind the power amplifier adopt a gold wire bonding mode, so that the thermal resistance of the final-stage power amplifier chip is reduced, and the final-stage power amplifier chip is convenient to meet the first-stage derating requirement of aerospace heat consumption; a preceding-stage radio frequency link adopts U-shaped wiring, the size is further reduced, meanwhile, a final-stage power amplifier and a second isolator form an independent module, debugging can be carried out independently, and direct replacement is facilitated when problems occur in the later period.
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Description

Technical Field

[0001] This utility model relates to the field of measurement and control technology, and in particular to a broadband X-band miniaturized solid amplifier module. Background Technology

[0002] With technological advancements, signal transmission bandwidths in fields such as telemetry, tracking, and command (TT&C) and satellite communications are becoming increasingly wider, and signal frequencies are rising. High-power solid-state amplifiers located at the end of the transmission channel are crucial to system performance, playing a vital role in the accuracy of TT&C and communication quality.

[0003] The main function of a solid-state power amplifier is to amplify the signal to be transmitted to a certain power level and then transmit it wirelessly into space via an antenna. The main electrical signal technical indicators include output power, operating bandwidth, and VSWR.

[0004] Traditional fixed amplifier modules mostly use surface mount technology (SMT) RF links. The encapsulation of the final stage power amplifier chip increases thermal resistance, requiring better heat dissipation methods for heat conduction, which leads to increased size. Alternatively, micro-assembly with gold wire bonding can be used to build the link, resulting in high complexity and difficulty in later debugging, and requiring a separate power supply and control board for control. Utility Model Content

[0005] The purpose of this invention is to provide a broadband X-band miniaturized fixed amplifier module, which effectively solves the problems mentioned in the background art.

[0006] To achieve the above objectives, the present invention provides the following technical solution.

[0007] A broadband X-band miniaturized solid-state amplifier module is characterized by comprising a front-end RF link powered by a power supply module, a final-stage micro-assembly module, and a control module. The input terminal of the front-end RF link receives electrical signals, the output terminal of the front-end RF link is electrically connected to the input terminal of the final-stage micro-assembly module, and the output terminal of the final-stage micro-assembly module is used to output electrical signals. Both the front-end RF link and the final-stage micro-assembly module are bidirectionally electrically connected to the control module.

[0008] Preferably, the front-end RF link includes a fixed attenuator using U-shaped wiring, a voltage-controlled attenuator, a first-stage amplifier, a first-stage filter, a second-stage amplifier, a second-stage filter, and a first-stage isolator. After the electrical signal is input, it passes sequentially through the fixed attenuator, voltage-controlled attenuator, first-stage amplifier, first-stage filter, second-stage amplifier, second-stage filter, and first-stage isolator. The fixed attenuator is used to match the input impedance. The voltage-controlled attenuator is used to automatically adjust the link gain and is bidirectionally electrically connected to the control module. The first-stage amplifier and the second-stage amplifier are used to pre-amplify the electrical signal. The first-stage filter and the second-stage filter are used to suppress electrical signal spurious signals. The first-stage isolator is used to optimize impedance matching, and the output of the first-stage isolator is electrically connected to the input of the final-stage micro-assembly module.

[0009] Preferably, the final stage micro-assembly module includes a final stage power amplifier and a second stage isolator. The output terminal of the first stage isolator is electrically connected to the input terminal of the final stage power amplifier, which is used to amplify the power of the electrical signal. The output terminal of the final stage power amplifier is electrically connected to the input terminal of the second isolator, which is used to optimize the output standing wave ratio and protect the final stage power amplifier.

[0010] Preferably, the control module includes a control MOSFET, a current detection circuit, and a boost DC circuit. The power supply module is electrically connected to the input terminals of the control MOSFET and the current detection circuit, respectively. The output of the current detection circuit is electrically connected to the voltage-controlled attenuator and the boost DC circuit, respectively. The output terminal of the boost DC circuit is electrically connected to the input terminal of the final stage power amplifier.

[0011] Preferably, the amplifier further includes a detector, the output of which is electrically connected to the detector, which is used to detect whether the power amplifier is outputting power normally.

[0012] Preferably, the output of the power module supplies power to the gate of the final stage power amplifier.

[0013] Preferably, it further includes an over-temperature protection circuit, which is electrically connected to the input terminal of the power module.

[0014] Compared with the prior art, the present invention has the following beneficial effects:

[0015] (1) The input terminal of the front-stage RF link of this invention receives electrical signals, and the output terminal of the front-stage RF link is electrically connected to the input terminal of the final stage micro-assembly module. The output terminal of the final stage micro-assembly module is used to output electrical signals. Both the front-stage RF link and the final stage micro-assembly module are bidirectionally electrically connected to the control module. This invention uses SMT for the front-stage RF link, increasing the operability of the front-stage RF link debugging and the diversity of device selection. The final stage power amplifier and the second isolator after the power amplifier are bonded with gold wire to reduce the thermal resistance of the final stage power amplifier chip, making it easier for the final stage power amplifier chip to meet the first-level derating requirements of aerospace thermal dissipation.

[0016] (2) The front-end RF link of this utility model adopts U-shaped routing to further reduce the size. At the same time, the final stage power amplifier and the second isolator form a separate module, which reduces the complexity of later debugging, makes operation simple, and facilitates direct replacement if problems occur later. Attached Figure Description

[0017] Figure 1 This is a flowchart illustrating the framework of this utility model;

[0018] Figure 2 This is a connection block diagram of the specific functional modules of this utility model. Detailed Implementation

[0019] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present utility model. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments.

[0020] In the description of this utility model, unless otherwise stated, "a plurality of" means two or more; the terms "upper," "lower," "left," "right," "inner," "outer," "front end," "rear end," "head," "tail," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. In addition, the terms "first," "second," "third," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0021] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0022] like Figures 1 to 2 As shown, the input terminal of the front-end RF link receives electrical signals, the output terminal of the front-end RF link is electrically connected to the input terminal of the final-stage micro-assembly module, and the output terminal of the final-stage micro-assembly module is used to output electrical signals; both the front-end RF link and the final-stage micro-assembly module are bidirectionally electrically connected to the control module.

[0023] The pre-amplifier RF link uses U-shaped wiring to reduce the overall size. The first-stage isolator and the second-stage isolator are placed before and after the final stage power amplifier, respectively, to prevent self-oscillation of the pre-amplifier RF link and protect the final stage power amplifier. After the electrical signal is input, it passes through a fixed attenuator, a voltage-controlled attenuator, a first-stage amplifier, a first-stage filter, a second-stage amplifier, a second-stage filter, a first-stage isolator, the final stage power amplifier, and a second-stage isolator before being output.

[0024] In this embodiment, a fixed attenuator is used to match the input impedance and ensure good VSWR at the RF input port; a voltage-controlled attenuator is used to automatically adjust the link gain to ensure stable output electrical signal power under different temperatures and input signal amplitudes; a first-stage amplifier and a second-stage amplifier are used to pre-amplify the electrical signal to achieve the necessary input power for the power amplifier; a first-stage filter and a second-stage filter are used to suppress electrical signal spurious signals; a first-stage isolator is used to optimize the impedance matching between the front-stage RF link and the final-stage micro-assembly module, while preventing self-oscillation caused by the front-stage RF link; a final-stage power amplifier is used to amplify the electrical signal; and a second-stage isolator is used to optimize the output VSWR and protect the final-stage power amplifier.

[0025] The final stage micro-assembly module includes a final stage power amplifier and a second stage isolator. The output of the first stage isolator is electrically connected to the input of the final stage power amplifier, which is used to amplify the power of the electrical signal. The output of the power supply module supplies power to the gate of the final stage power amplifier. The output of the final stage power amplifier is electrically connected to the input of the second stage isolator, which is used to optimize the output standing wave ratio and protect the final stage power amplifier.

[0026] The control module includes a control MOSFET, a current detection circuit, and a boost DC circuit. The power supply module is electrically connected to the inputs of the control MOSFET and the current detection circuit, respectively. The output of the current detection circuit is electrically connected to the voltage-controlled attenuator and the boost DC circuit, respectively. The output of the boost DC circuit is electrically connected to the input of the final stage power amplifier. It also includes a detector, which is electrically connected to the output of the final stage power amplifier. The detector is used to detect whether the final stage power amplifier is outputting power normally.

[0027] The final stage power amplifier and the second isolator form a separate module, which can be debugged independently and easily replaced if problems occur later.

[0028] The external input voltages are 12V and 5.2V. The 5.2V is converted to -3.3V to power the gate of the final stage power amplifier. The 12V input is connected to a control MOSFET, followed by a current detection circuit. After the current is detected to be normal, it is input to an AND gate along with the -3.3V through a NOT gate. At this time, the current detection circuit is not powered, and the output is designed to be pulled down to ensure that the control MOSFET is turned on when the negative voltage is normal in the initial state. When the final stage power amplifier is short-circuited or experiences a large current, the current detection circuit is triggered, turning off the control MOSFET and cutting off the power supply to protect the final stage power amplifier.

[0029] In this embodiment, the final stage power amplifier also has an over-temperature protection function. The temperature of the final stage power amplifier is transmitted back to the host computer for monitoring. The host computer sets a temperature value; if this value is exceeded, the over-temperature protection circuit is triggered, which cuts off the power module's enable, protecting the front-end RF link and the final stage micro-assembly module. The over-temperature protection circuit is located on the power module.

[0030] The preamplifier RF link and the final stage micro-assembly module have current loop control functions. Specifically, the preamplifier RF link detects the 12V input current and changes the voltage value of the voltage-controlled attenuator, thereby changing the attenuation of the voltage-controlled attenuator, changing the power of the final stage power amplifier, and thus changing the 12V input current. After loop balancing, the final stage power amplifier can achieve stable output power within the input range of -20~+5dBm.

[0031] This invention uses SMT for the front-end RF link, increasing the operability of the front-end RF link debugging and the diversity of component selection. The final stage power amplifier and the second isolator after the power amplifier are bonded with gold wire to reduce the thermal resistance of the final stage power amplifier chip, making it easier for the final stage power amplifier chip to meet the first-level derating requirements of aerospace thermal dissipation.

[0032] The front-end RF link of this invention adopts a U-shaped routing to further reduce the size. At the same time, the final stage power amplifier and the second isolator form a separate module, which reduces the complexity of later debugging, simplifies operation, and facilitates direct replacement if problems occur later.

[0033] The above embodiments are merely preferred embodiments of this utility model and should not be construed as limiting the scope of this utility model. Therefore, any modifications, equivalent changes, or improvements made in accordance with the claims of this utility model shall still fall within the scope of this utility model.

Claims

1. A broadband X-band miniaturized solid-state amplifier module, characterized in that: The system includes a front-end RF link powered by a power supply module, a final-stage micro-assembly module, and a control module. The input terminal of the front-end RF link receives electrical signals, and the output terminal of the front-end RF link is electrically connected to the input terminal of the final-stage micro-assembly module. The output terminal of the final-stage micro-assembly module is used to output electrical signals. Both the front-end RF link and the final-stage micro-assembly module are bidirectionally electrically connected to the control module.

2. The broadband X-band miniaturized fixed amplifier module according to claim 1, characterized in that: The front-end RF link includes a fixed attenuator using U-shaped wiring, a voltage-controlled attenuator, a first-stage amplifier, a first-stage filter, a second-stage amplifier, a second-stage filter, and a first-stage isolator. After the electrical signal is input, it passes through the fixed attenuator, voltage-controlled attenuator, first-stage amplifier, first-stage filter, second-stage amplifier, second-stage filter, and first-stage isolator in sequence. The fixed attenuator is used to match the input impedance. The voltage-controlled attenuator is used to automatically adjust the link gain and is bidirectionally electrically connected to the control module. The first-stage amplifier and second-stage amplifier are used to pre-amplify the electrical signal. The first-stage filter and second-stage filter are used to suppress electrical signal spurious signals. The first-stage isolator is used to optimize impedance matching, and the output of the first-stage isolator is electrically connected to the input of the final-stage micro-assembly module.

3. The broadband X-band miniaturized fixed amplifier module according to claim 2, characterized in that: The final stage micro-assembly module includes a final stage power amplifier and a second stage isolator. The output of the first stage isolator is electrically connected to the input of the final stage power amplifier, which is used to amplify the power of the electrical signal. The output of the final stage power amplifier is electrically connected to the input of the second stage isolator, which is used to optimize the output standing wave ratio and protect the final stage power amplifier.

4. The broadband X-band miniaturized fixed amplifier module according to claim 3, characterized in that: The control module includes a control MOSFET, a current detection circuit, and a boost DC circuit. The power supply module is electrically connected to the input terminals of the control MOSFET and the current detection circuit, respectively. The output of the current detection circuit is electrically connected to the voltage-controlled attenuator and the boost DC circuit, respectively. The output terminal of the boost DC circuit is electrically connected to the input terminal of the final stage power amplifier.

5. A broadband X-band miniaturized fixed amplifier module according to claim 4, characterized in that: It also includes a detector, the output of which is electrically connected to the detector, which is used to detect whether the final stage power amplifier is outputting power normally.

6. A broadband X-band miniaturized fixed amplifier module according to claim 3, characterized in that: The output of the power module supplies power to the gate of the final stage power amplifier.

7. A broadband X-band miniaturized fixed amplifier module according to claim 5 or 6, characterized in that: It also includes an over-temperature protection circuit, which is electrically connected to the input terminal of the power module.