Vapor phase precipitation equipment

Abstract

The utility model provides vapor deposition equipment, which relates to the technical field of vapor deposition and comprises a first pipeline, a second pipeline and a third pipeline, the flow controller is arranged at the first end of the first pipeline; the first end of the reaction chamber is communicated with the second end of the first pipeline; the first end of the second pipeline is opposite to the first end of the first pipeline, and the second end of the second pipeline is opposite to the second end of the first pipeline; the first end of the differential pressure gauge is communicated with the first pipeline, the second end of the differential pressure gauge is communicated with the second pipeline, and the differential pressure gauge is used for collecting the differential pressure value of the first pipeline and the second pipeline; the proportioning valve is arranged at the first end of the second pipeline, the second end of the second pipeline is communicated with the second end of the reaction chamber and then is communicated with the air exhaust system, and the proportioning valve can adjust the opening degree according to the pressure difference value. According to the gas phase precipitation equipment provided by the utility model, the flow control in the second pipeline is more stable, so that the growth quality of materials in the reaction chamber is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to a gas phase deposition technical field, specifically, a kind of gas phase deposition equipment. BACKGROUND

[0002] In gas phase deposition equipment, such as metal-organic chemical vapor deposition (MOCVD) equipment, RUN-VENT switching valve will be provided.

[0003] Among them, metal-organic chemical vapor deposition (MOCVD) is a new type of vapor phase epitaxial growth technology developed on the basis of vapor phase epitaxial growth.RUN-VENT refers to the operation or state related to the running (RUN) and bypass (VENT) of gas phase deposition equipment.

[0004] If there is a pressure difference between RUN-VENT, then at the moment of cutting in (or cutting out) a certain MO source, other sources will cut in (or cut out) another MO source into the RUN side pipeline, resulting in adverse effects when switching MO sources.

[0005] Among them, MO source (metalorganic source) is various, and more than 70 MO sources have been used in research and production, and the concept of MO source has exceeded the range of metal-organic compounds.Now the meaning of MO source should be: all metal or elemental organic compounds used as basic materials in MOCVD epitaxial technology are collectively referred to as MO source, so MO source is often referred to as "MOCVD precursor" in some foreign literature.

[0006] In related technical solutions, the set value of VENT flow is calculated by proportion-integral-differential (PID) to the flow controller of VENT, and the flow controller of VENT adjusts the actual flow to the set value by another set of PID calculation, that is, the flow of VENT side pipeline is adjusted to control the pressure difference by two sets of PID calculation.The above control strategy will cause the total flow to be unstable, and the unstable flow of VENT side pipeline may affect the pumping speed of vacuum pump and the pressure in the reaction chamber, and then affect the quality of material growth. UTILITY MODEL CONTENT

[0007] The utility model aims to solve at least the technical problem that the existing control strategy in the prior art causes the total flow to be unstable, affects the pumping speed of vacuum pump and the pressure in the reaction chamber, and then affects the quality of material growth.

[0008] For this purpose, the utility model provides a kind of gas phase deposition equipment.

[0009] Therefore, the utility model provides a kind of gas phase deposition equipment, comprising: first pipeline;Flow controller, first end of first pipeline;Reaction chamber, the first end of reaction chamber and the second end of first pipeline are communicated;Second pipeline, the first end of second pipeline is opposite the first end of first pipeline, and the second end of second pipeline is opposite the second end of first pipeline;Differential pressure gauge, the first end of differential pressure gauge and first pipeline are communicated, and the second end of differential pressure gauge and second pipeline are communicated, for collecting the differential pressure of first pipeline and second pipeline;Proportional regulating valve, first end of second pipeline, after the second end of second pipeline and the second end of reaction chamber are communicated, and with the air extraction system are communicated, proportional regulating valve can adjust opening according to differential pressure.

[0010] The technical scheme of the utility model provides a kind of gas phase deposition equipment, in the second pipeline, also in the first end of second pipeline, proportional regulating valve is provided, and opening control can be carried out according to the differential pressure exported by differential pressure gauge, compared with the scheme of adjusting the flow of VENT side pipeline using two sets of PID calculation proposed in the related technical scheme, the gas phase deposition equipment proposed in the utility model can make the flow control in second pipeline more stable, to reduce the influence of unstable flow in second pipeline on the air extraction speed of air extraction system and the pressure in reaction chamber, to improve the quality of material growth in reaction chamber.

[0011] Wherein, first pipeline can be understood as the operation (RUN) side pipeline of gas phase deposition equipment, and second pipeline can be understood as the bypass (VENT) side pipeline of gas phase deposition equipment.

[0012] The technical scheme of the utility model is realized based on the following principles, specifically, in the related technical scheme, when two sets of PID calculation are used to adjust the flow of VENT side pipeline to control pressure difference, there is conflict between two sets of PID calculation, so that the flow control in VENT side pipeline is unstable, and unstable flow in VENT side pipeline will affect the air extraction speed of vacuum pump and the pressure in reaction chamber, and then affect the quality of material growth.

[0013] In the technical scheme of the utility model, since proportional regulating valve is arranged at the first end of second pipeline, i.e. the upstream of second pipeline, after adjusting the opening of proportional regulating valve according to differential pressure, the flow stability of middle and downstream positions of second pipeline can be guaranteed, so that the air extraction speed of air extraction system and the pressure in reaction chamber are more stable, in this case, the degree of material growth components in reaction chamber being affected can be reduced, the problems of inconsistent wavelength, uneven film thickness and poor repeatability of luminescent material are improved, to improve the quality of material growth in reaction chamber.

[0014] In addition, the gas phase deposition equipment provided in the application also has the following additional technical features.

[0015] In some technical solutions, the proportional regulating valve is a PID proportional regulating valve.

[0016] In this technical solution, the opening of the PID proportional regulating valve is adjusted to adjust the flow in the second pipeline, thereby adjusting the pressure between the first pipeline and the second pipeline, and finally making the pressure difference between the first pipeline and the second pipeline zero. Specifically, based on the pressure difference, it is determined that the pressure value of the first pipeline is greater than that of the second pipeline, and the opening of the PID proportional regulating valve is increased; based on the pressure difference, it is determined that the pressure value of the first pipeline is less than that of the second pipeline, and the opening of the PID proportional regulating valve is reduced; based on the pressure difference, it is determined that the pressure value of the first pipeline is equal to that of the second pipeline, and the opening of the PID proportional regulating valve is kept unchanged.

[0017] In this technical solution, in the case that the pressure value of the first pipeline is greater than that of the second pipeline, the opening of the PID proportional regulating valve is increased to increase the flow of the gas in the second pipeline, thereby increasing the pressure value in the second pipeline; and in the case that the pressure value of the first pipeline is less than that of the second pipeline, the opening of the PID proportional regulating valve is reduced to reduce the flow of the gas in the second pipeline, thereby reducing the pressure value in the second pipeline, and finally making the pressure difference between the first pipeline and the second pipeline zero.

[0018] In this process, the pressure value in the second pipeline can be adjusted to make the flow control in the second pipeline more stable, thereby reducing the influence of unstable flow in the second pipeline on the pumping speed of the pumping system and the pressure in the reaction chamber, so as to improve the quality of material growth in the reaction chamber.

[0019] In some technical solutions, the gas phase deposition equipment also includes a pressure control hole located between a first position in the first pipeline and a second end of the first pipeline, and the first position is the position in the first pipeline connected with the first end of the differential pressure gauge.

[0020] In this technical solution, it is considered that the pipeline resistance in the first pipeline is too small, and even if the opening of the proportional regulating valve is adjusted to the minimum, the pressure difference between the first pipeline and the second pipeline cannot be adjusted to zero.

[0021] Based on this, the pressure control hole is provided on the first pipeline to provide a certain gas resistance to increase the pressure value in the first pipeline, and at this time, the opening of the proportional regulating valve is adjusted to make the pressure difference between the first pipeline and the second pipeline zero.

[0022] Obviously, in this process, the pressure value in the second pipeline can be adjusted until the pressure difference between the first pipeline and the second pipeline is adjusted to zero, so that the flow control in the second pipeline is more stable, thereby reducing the influence of unstable flow in the second pipeline on the pumping speed of the pumping system and the pressure in the reaction chamber, so as to improve the quality of material growth in the reaction chamber.

[0023] In some embodiments, the pressure control hole has a diameter greater than or equal to 1 mm and less than or equal to 5 mm.

[0024] In this embodiment, the hole is provided on the first pipeline, and the use of the hole does not require additional components. Obviously, while achieving pressure control, the number of components included in the vapor deposition equipment is reduced, thereby reducing the complexity of the vapor deposition equipment.

[0025] In the above embodiment, the diameter of the pressure control hole can be selected according to the required resistance in the first pipeline, which will not be described here.

[0026] In some embodiments, the vapor deposition equipment further comprises a manual regulating valve provided in the second pipeline between the second position and the second end of the second pipeline, and the second position is the position where the second end of the differential pressure gauge is connected to the second pipeline.

[0027] In this embodiment, for the second pipeline, a manual regulating valve is provided to provide resistance in the second pipeline. Specifically, if the opening degree of the proportional regulating valve is too large, the opening degree of the manual regulating valve can be adjusted to be smaller, so that the opening degree of the proportional regulating valve does not need to be adjusted to be too large. Conversely, if the opening degree of the proportional regulating valve is too small, the opening degree of the manual regulating valve can be adjusted to be larger, so that the opening degree of the proportional regulating valve does not need to be adjusted to be too small. In this process, the manual regulating valve can make the opening degree of the proportional regulating valve appropriate.

[0028] In some embodiments, the flow rate of the proportional regulating valve is maintained at 2 SLM to 20 SLM (standard liters per minute).

[0029] In some embodiments, the vapor deposition equipment further comprises a buffer tank provided in the second pipeline between the second position and the manual regulating valve.

[0030] In this embodiment, the buffer tank provided can control the flow in the second pipeline, thereby adjusting the pressure in the second pipeline, reducing the influence of unstable flow in the second pipeline on the pumping speed of the pumping system and the pressure in the reaction chamber, and improving the quality of material growth in the reaction chamber.

[0031] Specifically, the buffer tank comprises a tank body, an end cover is installed at an upper end of the tank body, a plurality of groups of air holes are formed in an outer wall of the end cover, a filter plate is installed at a lower end of the end cover, a sealing plate is installed in the tank body, a counterweight is attached to an upper end of the sealing plate, a limiting ring is fixedly arranged at a lower end in the tank body, a lubricating assembly is arranged between the tank body, the sealing plate and the limiting ring, and the tank body and the sealing plate can only slide relative to each other.

[0032] When a larger air pressure in the second pipeline flows into the buffer tank, the sealing plate is pushed upward, and when the air pressure in the second pipeline decreases, the gas stored in the buffer tank flows back into the second pipeline, so that the buffer tank plays a role of air pressure regulation for the second pipeline.

[0033] In some technical solutions, the volume of the buffer tank is greater than or equal to 100 milliliters and less than or equal to 1 liter.

[0034] In some technical solutions, the vapor deposition equipment further comprises at least one switching valve, a first end of each switching valve is in communication with the first connecting portion of the first pipeline, and a second end of each switching valve is in communication with the second connecting portion of the second pipeline, the switching valve is used for switching the mode of the vapor deposition equipment, the first connecting portion is located between the pressure control hole and the first position, and the second connecting portion is located between the buffer tank and the second position.

[0035] In this technical solution, the switching valve is configured to switch between the RUN mode and the VENT mode to allow different gas flows to be used in different production stages, the first end of the switching valve is in communication with the first connecting portion of the first pipeline, the second end of the switching valve is in communication with the second connecting portion of the second pipeline, and the mode is switched at the first connecting portion and the second connecting portion, so that fluctuations in the pumping speed of the pumping system and the pressure in the reaction chamber during mode switching can be reduced, thereby improving the quality of material growth in the reaction chamber.

[0036] In some technical solutions, the number of switching valves is greater than or equal to 3.

[0037] In this technical solution, the type and number of switching valves can be selected according to different process requirements, so as to meet the use of different gas flows in different production stages.

[0038] In some technical solutions, the vapor deposition equipment further comprises a flow sensor, the flow sensor is arranged in the second pipeline, or the flow sensor is integrated in the proportional regulating valve.

[0039] In the technical scheme, the flow sensor is arranged to measure the flow in the second pipeline, so that the user can know the real-time flow in the second pipeline and the running condition of the gas-phase deposition equipment.

[0040] In the above technical scheme, the flow sensor is integrated in the proportional regulating valve, so that the number of parts of the gas-phase deposition equipment can be reduced, and the assembly time of the gas-phase deposition equipment can be shortened and the assembly efficiency can be improved.

[0041] The additional aspects and advantages of the present application will become apparent from the following description, or will be appreciated by practice of the application. BRIEF DESCRIPTION OF DRAWINGS

[0042] The above and / or additional aspects and advantages of the present application will become apparent and be readily appreciated from the following description, taken in conjunction with the accompanying drawings, in which:

[0043] Figure 1 is a structural schematic diagram of a gas-phase deposition equipment of one embodiment of the present application;

[0044] Figure 2 is a structural schematic diagram of a gas-phase deposition equipment of one embodiment of the present application.

[0045] Among them, Figure 1 and Figure 2 The correspondence between the reference signs and the part names in the drawings is as follows:

[0046] 100, gas-phase deposition equipment, 102, first pipeline, 1022, first position, 1024, first connecting part, 104, flow controller, 106, reaction chamber, 108, second pipeline, 1082, second position, 1084, second connecting part, 110, proportional regulating valve, 112, differential pressure gauge, 114, pressure control hole, 116, manual regulating valve, 118, buffer tank, 120, switching valve, 122, flow sensor, 200, gas extraction system. DETAILED DESCRIPTION

[0047] In order to more clearly understand the above-mentioned purposes, features and advantages of the present application, the present application will be further described in detail below in conjunction with the drawings and specific embodiments. It should be noted that the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

[0048] In the following description, many specific details are set forth in order to provide a thorough understanding of the present application, but the present application can also be implemented in other ways different from those described herein, therefore, the protection scope of the present application is not limited by the specific embodiments disclosed below.

[0049] Reference is made below Figure 1 and Figure 2 to describe the vapor deposition equipment according to some embodiments of the present application.

[0050] As shown in Figure 1 and Figure 2 , the present application provides a vapor deposition equipment 100, comprising: a first pipeline 102; a flow controller 104 arranged at a first end of the first pipeline 102; a reaction chamber 106, a first end of the reaction chamber 106 being in communication with a second end of the first pipeline 102; a second pipeline 108, a first end of the second pipeline 108 being opposite to the first end of the first pipeline 102, and a second end of the second pipeline 108 being opposite to the second end of the first pipeline 102; a differential pressure meter 112, a first end of the differential pressure meter 112 being in communication with the first pipeline 102, and a second end of the differential pressure meter 112 being in communication with the second pipeline 108, the differential pressure meter 112 being configured to collect a differential pressure value of the first pipeline 102 and the second pipeline 108; and a proportional regulating valve 110 arranged at the first end of the second pipeline 108, the second end of the second pipeline 108 being in communication with a second end of the reaction chamber 106 and then in communication with an air extraction system 200, the proportional regulating valve 110 being capable of adjusting an opening degree according to the differential pressure value.

[0051] The present application provides a vapor deposition equipment 100, wherein the proportional regulating valve 110 is arranged at an upstream of the second pipeline 108, i.e. at the first end of the second pipeline 108, and is capable of adjusting the opening degree according to the differential pressure value output by the differential pressure meter 112. Compared with the solution of adjusting the flow of the VENT side pipeline by using two sets of PID calculation in the prior art, the vapor deposition equipment 100 provided by the present application can stabilize the flow control in the second pipeline 108, thereby reducing the influence of the unstable flow in the second pipeline 108 on the air extraction speed of the air extraction system 200 and the pressure in the reaction chamber 106, and improving the quality of material growth in the reaction chamber 106.

[0052] In some embodiments, the vapor deposition equipment 100 is a metal-organic chemical vapor deposition (MOCVD) equipment.

[0053] The first pipeline 102 can be understood as a RUN side pipeline of the vapor deposition equipment 100, and the second pipeline 108 can be understood as a VENT side pipeline of the vapor deposition equipment 100.

[0054] The embodiment of the utility model is realized based on the following principle, specifically, in the related technical scheme, when the flow of the VENT side pipeline is controlled by adopting two sets of PID calculation to adjust the pressure difference, the two sets of PID calculation exist conflict, so that the flow control in the VENT side pipeline is unstable, and the unstable flow in the VENT side pipeline will affect the pumping speed of the vacuum pump and the pressure in the reaction chamber 106, and further affect the quality of material growth.

[0055] In the embodiment of the utility model, since the proportional regulating valve 110 is arranged at the first end of the second pipeline 108, that is, the upstream of the second pipeline 108, after the opening of the proportional regulating valve 110 is adjusted according to the pressure difference value, the stability of the flow at the middle and downstream positions of the second pipeline 108 can be ensured, so that the pumping speed of the pumping system 200 and the pressure in the reaction chamber 106 are more stable, in this case, the degree of influence of the material growth components in the reaction chamber 106 can be reduced, and the problems of inconsistent wavelength of luminescent materials, uneven film thickness and poor repeatability can be improved, so as to improve the quality of material growth in the reaction chamber 106.

[0056] In some embodiments, optionally, the proportional regulating valve 110 is a PID proportional regulating valve.

[0057] In this embodiment, the opening of the PID proportional regulating valve is adjusted to adjust the flow in the second pipeline 108, and then the pressure adjustment between the first pipeline 102 and the second pipeline 108 is realized, and finally the pressure difference value between the first pipeline 102 and the second pipeline 108 is zero.

[0058] Specifically, based on the pressure difference value, it is determined that the pressure value of the first pipeline 102 is greater than the pressure value of the second pipeline 108, and the opening of the PID proportional regulating valve is increased; based on the pressure difference value, it is determined that the pressure value of the first pipeline 102 is less than the pressure value of the second pipeline 108, and the opening of the PID proportional regulating valve is reduced; based on the pressure difference value, it is determined that the pressure value of the first pipeline 102 is equal to the pressure value of the second pipeline 108, and the opening of the PID proportional regulating valve is kept unchanged.

[0059] Wherein, in the case that the pressure value of the first pipeline 102 is greater than the pressure value of the second pipeline 108, the flow of the gas flowing into the second pipeline 108 is increased by increasing the opening of the PID proportional regulating valve, and then the pressure value in the second pipeline 108 is increased; and in the case that the pressure value of the first pipeline 102 is less than the pressure value of the second pipeline 108, the flow of the gas flowing into the second pipeline 108 is reduced by reducing the opening of the PID proportional regulating valve, and then the pressure value in the second pipeline 108 is reduced, and finally the pressure difference value between the first pipeline 102 and the second pipeline 108 is zero.

[0060] In this process, the pressure value in the second pipeline 108 can be adjusted to make the flow control in the second pipeline 108 more stable, thereby reducing the influence of the unstable flow in the second pipeline 108 on the pumping speed of the pumping system 200 and the pressure in the reaction chamber 106, so as to improve the quality of material growth in the reaction chamber 106.

[0061] In some embodiments, optionally, the vapor deposition apparatus 100 further comprises a control assembly connected with the proportional regulating valve 110 and the differential pressure gauge 112 respectively, the control assembly controls the differential pressure gauge 112 to collect the pressure difference between the first pipeline 102 and the second pipeline 108, and controls the proportional regulating valve 110 to adjust the opening degree according to the pressure difference between the first pipeline 102 and the second pipeline 108.

[0062] In some embodiments, optionally, the vapor deposition apparatus 100 further comprises a pressure control hole 114 located between a first position 1022 in the first pipeline 102 and the second end of the first pipeline 102, the first position 1022 being the position in the first pipeline 102 connected with the first end of the differential pressure gauge 112.

[0063] In this embodiment, considering that the pipeline resistance in the first pipeline 102 is too small, even if the opening degree of the proportional regulating valve 110 is adjusted to the minimum, the pressure difference between the first pipeline 102 and the second pipeline 108 cannot be adjusted to zero.

[0064] Based on this, the pressure control hole 114 is arranged on the first pipeline 102 to provide a certain gas resistance by the pressure control hole 114 to increase the pressure value in the first pipeline 102, and at this time, the pressure difference between the first pipeline 102 and the second pipeline 108 is adjusted to zero by adjusting the opening degree of the proportional regulating valve 110.

[0065] Obviously, in this process, the pressure value in the second pipeline 108 can be adjusted until the pressure difference between the first pipeline 102 and the second pipeline 108 is adjusted to zero, so that the flow control in the second pipeline 108 is more stable, thereby reducing the influence of the unstable flow in the second pipeline 108 on the pumping speed of the pumping system 200 and the pressure in the reaction chamber 106, so as to improve the quality of material growth in the reaction chamber 106.

[0066] In some embodiments, optionally, the aperture of the pressure control hole 114 is greater than or equal to 1 mm and less than or equal to 5 mm.

[0067] In this embodiment, it can be understood that the use of the hole arranged on the first pipeline 102 does not need to increase additional components, and obviously, while achieving pressure control, the number of components included in the vapor deposition apparatus 100 is reduced, thereby reducing the complexity of the vapor deposition apparatus 100.

[0068] In the above embodiment, the aperture of the pressure control hole 114 can be selected according to the required resistance in the first pipeline 102, which will not be described herein.

[0069] In some embodiments, the vapor deposition apparatus 100 optionally further comprises a manual regulating valve 116 arranged in the second pipeline 108 between the second position 1082 and the second end of the second pipeline 108, the second position 1082 being the position in the second pipeline 108 connected to the second end of the differential pressure gauge 112.

[0070] In this embodiment, for the second pipeline 108, the manual regulating valve 116 is arranged to provide resistance in the second pipeline 108, specifically, if the opening of the proportional regulating valve 110 is too large, the opening of the proportional regulating valve 110 can be adjusted to be not too large by adjusting the opening of the manual regulating valve 116, and vice versa, if the opening of the proportional regulating valve 110 is too small, the opening of the proportional regulating valve 110 can be adjusted to be not too small by adjusting the opening of the manual regulating valve 116, in this process, the manual regulating valve 116 is arranged to make the opening of the proportional regulating valve 110 appropriate.

[0071] In some embodiments, the flow rate of the proportional regulating valve 110 is maintained at 2 SLM~20 SLM (standard liters per minute).

[0072] In some embodiments, the vapor deposition apparatus 100 optionally further comprises a buffer tank 118 arranged in the second pipeline 108 between the second position 1082 and the manual regulating valve 116.

[0073] In this embodiment, the buffer tank 118 is arranged to control the flow rate in the second pipeline 108, thereby regulating the pressure in the second pipeline 108, reducing the influence of unstable flow rate in the second pipeline 108 on the pumping speed of the pumping system 200 and the pressure in the reaction chamber 106, thereby improving the quality of material growth in the reaction chamber 106.

[0074] Specifically, the buffer tank 118 comprises a tank body, an end cover is mounted at the upper end of the tank body, a plurality of groups of air holes are arranged on the outer wall of the end cover, a filter plate is mounted at the lower end of the end cover, a sealing plate is mounted in the tank body, a counterweight is attached to the upper end of the sealing plate, a limiting ring is fixedly arranged at the lower end of the tank body, a lubricating assembly is arranged between the tank body, the sealing plate and the limiting ring, and the tank body and the sealing plate can only slide relative to each other.

[0075] When there is a sudden large pressure in the second pipeline 108, the large pressure will push the sealing plate to move upward, and when the pressure in the second pipeline 108 decreases, the gas stored in the buffer tank 118 will flow back to the second pipeline 108, thereby playing a role of pressure regulation for the second pipeline 108.

[0076] In some embodiments, optionally, the volume of the buffer tank 118 is greater than or equal to 100 milliliters and less than or equal to 1 liter.

[0077] In some embodiments, optionally, the vapor deposition apparatus 100 further comprises at least one switching valve 120, a first end of each switching valve 120 being in communication with the first connecting portion 1024 of the first pipeline 102, and a second end of each switching valve 120 being in communication with the second connecting portion 1084 of the second pipeline 108, the switching valve 120 being used for switching the mode of the vapor deposition apparatus 100; wherein the first connecting portion 1024 is located between the pressure control hole 114 and the first position 1022, and the second connecting portion 1084 is located between the buffer tank 118 and the second position 1082.

[0078] In this embodiment, the switching valve 120 is configured to switch between the RUN mode and the VENT mode to allow different gas flows to be used in different production stages, wherein the first end of the switching valve 120 is in communication with the first connecting portion 1024 of the first pipeline 102, the second end of the switching valve 120 is in communication with the second connecting portion 1084 of the second pipeline 108, and the mode is switched at the first connecting portion 1024 and the second connecting portion 1084. During this process, fluctuations in the pumping speed of the pumping system 200 and the pressure in the reaction chamber 106 during mode switching can be reduced, thereby improving the quality of material growth in the reaction chamber 106.

[0079] In some embodiments, optionally, the number of switching valves 120 is greater than or equal to 3.

[0080] In this embodiment, the type and number of switching valves 120 can be selected according to different process requirements to meet the use of different gas flows in different production stages.

[0081] In some embodiments, the number of switching valves 120 is 3, as shown in Figure 1 and Figure 2 The three switching valves 120 are denoted as A, B and C, respectively.

[0082] In some embodiments, optionally, the vapor deposition apparatus 100 further comprises a flow sensor 122, the flow sensor 122 being arranged in the second pipeline 108, or the flow sensor 122 being integrated in the proportional regulating valve 110.

[0083] In this embodiment, by arranging the flow sensor 122, the flow sensor 122 is used to measure the flow in the second pipeline 108, at this time, the user can use the flow sensor 122 to know the real-time flow in the second pipeline 108, and further know the running condition of the gas phase deposition device 100.

[0084] In the above embodiment, by integrating the flow sensor 122 in the proportional regulating valve 110, the number of parts of the gas phase deposition device 100 can be reduced, and the assembly time of the gas phase deposition device 100 can be shortened and the assembly efficiency can be improved when assembling the gas phase deposition device 100.

[0085] In the description of the present application, the term "a plurality of" refers to two or more than two, unless otherwise explicitly limited, the terms "upper", "lower" and the like indicate the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, therefore it cannot be understood as a limitation on the present application; The terms "connection", "installation", "fixation" and the like should be understood broadly, for example, "connection" can be fixed connection, can also be detachable connection, or integral connection; It can be directly connected, or indirectly connected through an intermediate medium. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0086] In the description of the present application, the terms "one embodiment", "some embodiments", "a specific embodiment" and the like mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In the present application, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0087] The above is only the preferred embodiment of the present application, and is not used to limit the present application. For those skilled in the art, the present application can have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A vapor deposition apparatus characterized by comprising: The gas phase deposition equipment comprises: a first pipeline; a flow controller arranged at a first end of the first pipeline; a reaction chamber, a first end of the reaction chamber being in communication with a second end of the first pipeline; a second pipeline, a first end of the second pipeline being opposite to the first end of the first pipeline, and a second end of the second pipeline being opposite to the second end of the first pipeline; a differential pressure gauge, a first end of the differential pressure gauge being in communication with the first pipeline, and a second end of the differential pressure gauge being in communication with the second pipeline, the differential pressure gauge being configured to collect a differential pressure value between the first pipeline and the second pipeline; a proportional regulating valve arranged at the first end of the second pipeline, the second end of the second pipeline being in communication with a second end of the reaction chamber and then with an air extraction system, the proportional regulating valve being capable of adjusting an opening degree according to the differential pressure value.

2. The vapor deposition apparatus according to claim 1, wherein The proportional regulating valve is a PID proportional regulating valve.

3. The vapor deposition apparatus according to claim 1, wherein The gas phase deposition equipment further comprises: a pressure control hole located between a first position in the first pipeline and a second end of the first pipeline, the first position being a position in the first pipeline where the first end of the differential pressure gauge is connected.

4. The vapor deposition apparatus according to claim 3, wherein The pressure control hole has a hole diameter greater than or equal to 1 mm and less than or equal to 5 mm.

5. The vapor deposition apparatus according to claim 3, wherein The gas phase deposition equipment further comprises: a manual regulating valve arranged in the second pipeline and located between a second position in the second pipeline and a second end of the second pipeline, the second position being a position in the second pipeline where the second end of the differential pressure gauge is connected.

6. The vapor deposition apparatus according to claim 5, wherein The gas phase deposition equipment further comprises: a buffer tank arranged in the second pipeline and located between the second position and the manual regulating valve.

7. The vapor deposition apparatus according to claim 6, wherein The buffer tank has a volume greater than or equal to 100 ml and less than or equal to 1 L.

8. The vapor deposition apparatus according to claim 6, wherein The gas phase deposition equipment further comprises: at least one switching valve, a first end of each of the switching valves being in communication with a first connecting portion of the first pipeline, and a second end of each of the switching valves being in communication with a second connecting portion of the second pipeline, the switching valves being configured to switch modes of the gas phase deposition equipment; wherein the first connecting portion is located between the pressure control hole and the first position, and the second connecting portion is located between the buffer tank and the second position.

9. The vapor deposition apparatus according to claim 8, wherein The number of the switching valves is greater than or equal to 3.

10. The vapor deposition apparatus according to any one of claims 1 to 9, characterized by, The gas phase deposition equipment further comprises: a flow sensor, the flow sensor being arranged in the second pipeline or integrated in the proportional regulating valve.

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