Door valve assembly of cavity and semiconductor process equipment

Abstract

The utility model provides a gate valve assembly of a cavity and semiconductor process equipment. A door valve assembly of the cavity is arranged at a wafer conveying opening of the cavity and comprises a door frame, the door frame is provided with a wafer conveying channel penetrating through the door frame in the thickness direction of the door frame, and the door frame is further provided with an air inlet hole, an air outlet hole, an air inlet channel, an exhaust channel and a collecting cavity. Wherein the air inlet hole is located in the top wall of the wafer conveying channel and communicates with the wafer conveying channel and the air inlet channel, and the air inlet channel is used for providing air for the air inlet hole; the air outlet hole is located in the bottom wall of the wafer conveying channel and communicates with the wafer conveying channel and the collecting cavity, the collecting cavity communicates with the exhaust channel, and the exhaust channel is used for exhausting air in the collecting cavity. According to the utility model, gas can be provided for the wafer conveying channel so as to purge impurity particles at the wafer conveying channel, so that the surface of the wafer is prevented from being polluted by the impurity particles floating on the wafer conveying channel, and the yield of wafer process treatment is further improved.

Description

TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate to, but are not limited to, the technical field of semiconductor technology, and in particular, to a door valve assembly of a chamber and a semiconductor process equipment. BACKGROUND

[0002] A chemical vapor deposition (CVD) silicon epitaxial equipment is a device for growing a silicon thin film on a substrate surface such as silicon base by using a CVD technology. A general implementation of silicon epitaxy is to control a reaction gas to flow through a heated substrate, and a reactant chemically reacts on the substrate surface to generate silicon element, and then a layer of silicon element thin film is formed on the substrate surface.

[0003] When a wafer is processed in a silicon epitaxial equipment, impurity particles on the wafer surface will have an adverse effect on the quality of the epitaxial layer. In order to eliminate the adverse effect of impurity particles, a cleaning process after processing is generally used to clean the surface of the wafer. However, some large particles or particles buried under the epitaxial layer cannot be cleaned, which affects the yield of wafer processing.

[0004] During the entire process, the transmission process of the wafer between different chambers is one of the main ways to cause particle problems. In order to reduce the impurity particles introduced during the transmission process, the related art will perform vacuum pumping on each chamber to replace the ambient gas in the chamber, so that the impurity particles on the inner wall of the chamber will leave the chamber together with the replacement of the ambient gas.

[0005] However, since each chamber is provided with a door body arranged at a wafer transfer port, the wafer needs to pass through several door bodies during the transmission process. The opening and closing of the wafer transfer port will stir up the particles hidden in the corners of the door body, so that the wafer is contaminated by the impurity particles during the passing process. UTILITY MODEL CONTENT

[0006] The utility model aims at at least solving one of the technical problems existing in the prior art, and proposes a door valve assembly of a chamber and a semiconductor process equipment. The gas inlet hole is used to provide gas to the wafer transfer channel to blow off the impurity particles in the wafer transfer channel, and the gas can carry the impurity particles to leave the wafer transfer channel through the gas outlet, thereby reducing the impurity particles at the door valve assembly and solving the problem of impurity particles caused by the door body in the related art.

[0007] The utility model provides a door valve assembly of chamber, sets up in the chamber's transmission sheet port, and the door valve assembly includes door frame, and the door frame is provided with the transmission sheet channel which penetrates the door frame along the thickness direction of door frame, and the door frame is further provided with air inlet hole, air outlet hole, air inlet channel, exhaust channel and collection cavity, wherein, air inlet hole is located on the top wall of transmission sheet channel and is communicated with transmission sheet channel and air inlet channel, and air inlet channel is used for providing gas to air inlet hole, air outlet hole is located on the bottom wall of transmission sheet channel and is communicated with transmission sheet channel and collection cavity, and collection cavity is communicated with exhaust channel, and exhaust channel is used for discharging the gas in collection cavity.

[0008] In some embodiments, the collection cavity is located below the transmission sheet channel, the cross section of the collection cavity parallel to the plane where the door frame is located is funnel-shaped, and the inner diameter of the collection cavity gradually decreases away from the transmission sheet channel.

[0009] In some embodiments, the door frame is provided with a plurality of air inlet holes, and the openings of the plurality of air inlet holes are distributed on the inner wall surface of the transmission sheet channel along the length direction of the transmission sheet channel; wherein, the area occupied by the plurality of air inlet holes includes a middle area located in the middle and edge areas located on both sides of the middle area, respectively, and the middle area and the edge areas are both distributed with a plurality of air inlet holes; the density of the plurality of air inlet holes distributed in the middle area is greater than the density of the plurality of air inlet holes distributed in the edge areas.

[0010] In some embodiments, the air outlet direction of the plurality of air inlet holes distributed in the middle area is perpendicular to the transmission direction; the air outlet direction of the plurality of air inlet holes distributed in the edge areas is inclined to the side away from the middle area relative to the air outlet direction of the plurality of air inlet holes distributed in the middle area.

[0011] In some embodiments, the air outlet directions of the plurality of air inlet holes distributed in the same edge area are the same.

[0012] In some embodiments, the air outlet direction of the plurality of air inlet holes distributed in the edge areas is inclined to the side away from the middle area relative to the air outlet direction of the plurality of air inlet holes distributed in the middle area, and the angle is greater than or equal to 3°.

[0013] In some embodiments, the hole channel of the air inlet hole is curved along its extension direction.

[0014] In some embodiments, the shape of the axis of the air inlet channel includes at least one U shape; and the shape of the axis of the exhaust channel includes at least one U shape.

[0015] In some embodiments, the door valve assembly further comprises an air extraction device and a collection piece with a temporary storage cavity, and the exhaust channel is communicated with the air extraction device through the temporary storage cavity.

[0016] As a second aspect of the utility model, a semiconductor process equipment is also provided, including transmission chamber, process chamber and door valve assembly of chamber as above, wherein, door valve assembly is arranged between transmission chamber and process chamber;Door valve assembly also includes door plate, and the door plate is arranged on the door frame to close or open the transmission channel.

[0017] The utility model has the following beneficial effects:

[0018] The door valve assembly of the utility model is provided with the gas inlet hole and the gas outlet hole communicated with the transmission channel on the door frame, the gas inlet hole is used for providing the gas to the transmission channel, the impurity particles in the transmission channel are swept by the gas, and the gas outlet hole is used for carrying the impurity particles out of the transmission channel by the gas.The collection cavity communicated with the gas outlet hole can collect and accommodate the impurity particles carried by the gas, and the gas in the collection cavity is discharged through the exhaust passage communicated with the collection cavity, so that the gas can carry the impurity particles and leave the collection cavity in time, avoiding the impurity particles returning to the transmission channel.The utility model not only considers reducing the number of impurity particles in the transmission channel by sweeping the transmission channel by the gas, but also considers the secondary pollution problem after sweeping, provides a buffer zone through the collection cavity, avoids the impurity particles returning to the transmission channel through the gas outlet hole by the gas disturbance, and makes the wafer surface not be polluted by the impurity particles floating in the transmission port during the wafer passing through the transmission channel, thereby improving the yield of wafer process treatment.

[0019] Other objects and features of the present utility model will become apparent from the following detailed description, claims, and when considered in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0020] The above and / or additional aspects and advantages of the utility model will become apparent and be readily understood from the following description, taken in conjunction with the accompanying drawings, in which:

[0021] Figure 1 Is the structural schematic view of the related art door plate in the closed state of closing the transmission channel.

[0022] Figure 2 Is the structural schematic view of the related art door plate in the open state of opening the transmission channel.

[0023] Figure 3 Is the structural schematic view of the wafer passing through the transmission channel of the related art.

[0024] Figure 4 Is the structural schematic view of the door valve assembly of the utility model embodiment.

[0025] Figure 5 Is the schematic view of the gas inlet hole not providing the gas to the transmission channel of the utility model embodiment.

[0026] Figure 6This is a schematic diagram illustrating how the air inlet of this invention supplies gas to the wafer transfer channel when the wafer does not pass through the transfer channel.

[0027] Figure 7 This is a schematic diagram of the gas inlet of this utility model providing gas to the wafer transfer channel when the wafer passes through the transfer channel.

[0028] Figure 8 This is a structural schematic diagram of the semiconductor process equipment according to an embodiment of the present invention.

[0029] Explanation of key component symbols:

[0030] 1. Door body; 2. Door frame; 3. Door panel; 4. Wafer transfer channel; 5. Wafer;

[0031] 10. Valve assembly; 20. Wafer; 30. LoadPort; 50. Process chamber; 60. LoadLock; 70. EFEM; 80. Transfer chamber; 51. Wafer transfer port;

[0032] 100. Door frame; 110. Transmission channel; 120. Air inlet; 130. Air outlet; 140. Air inlet channel; 150. Exhaust channel; 160. Collection chamber;

[0033] 200. Door panel; 400. Collectible parts;

[0034] 610. Intake valve; 620. Exhaust valve. Detailed Implementation

[0035] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this utility model, and should not be construed as limiting this utility model.

[0036] In the description of this utility model, it should be understood that the terms "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of the stated features. In the description of this utility model, "a plurality of" means two or more, unless otherwise explicitly specified.

[0037] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows for communication; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0038] In the description of this utility model, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0039] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with an embodiment or example is included in at least one embodiment or example of this utility model. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0040] Semiconductor processing equipment can perform various semiconductor processing steps on wafers, such as photolithography, etching, silicon epitaxy, and thin film deposition. During silicon epitaxy, the wafer surface is easily contaminated with impurity particles, which can affect the wafer yield. Generally, these impurity particles may originate from the cavity walls, wafer transport, or other sources.

[0041] illustrative, see Figure 8 Semiconductor process equipment may include a LoadPort (loading / unloading chamber) 30, an EFEM (transfer chamber) 70, a LoadLock (loading / locking chamber) 60, a transfer chamber 80, and a process chamber 50 arranged sequentially. A gate valve assembly 10 may be provided between each pair of adjacent chambers to allow communication between them for transferring the wafer 20; or to shut down the connection to allow the chamber to begin executing corresponding steps. During the processing of the wafer 20, the wafer 20 is sequentially transferred between the LoadPort 30, EFEM 70, LoadLock 60, transfer chamber 80, and process chamber 50 to reach the vacuum process chamber 50 from the atmospheric environment, where it undergoes the corresponding process processing. To distinguish wafers 20 located in different chambers, the wafers 20 are marked with different serial numbers, see [link to relevant documentation]. Figure 8Wafer 20 located in EFEM70 is marked "1", wafer 20 located in LoadLock60 is marked "2", wafer 20 located in transfer chamber 80 is marked "3", and wafer 20 located in process chamber 50 is marked "4". It should be noted that during the transfer of unprocessed wafer 20 from LoadPort30 to process chamber 50, wafers "1", "2", and "3" are not processed, only wafer "4" is processed; during the transfer of processed wafer 20 from process chamber 50 to LoadPort30, wafers "1", "2", "3", and "4" are all processed. As can be seen from the above transfer process of wafer 20, when wafer 20 is processed in semiconductor process equipment, it passes through at least six gate valve components 10. Therefore, the impurity particles present at the gate valve components 10 will have a significant impact on the yield of wafer 20.

[0042] To describe the structure of the door 1 in the related art in detail, the following description is provided with reference to the accompanying drawings. Schematic, the door 1 in the related art includes a door frame 2 and a door panel 3, with a transfer channel 4 provided on the door frame 2. See also... Figure 1 Door panel 3 can rise relative to the transfer channel 4 to close the transfer channel 4; see also Figure 2 The door panel 3 can descend relative to the transfer channel 4 to open the transfer channel 4. To improve the airtightness of the door panel 3 and door frame 2 when closing the transfer channel 4, the door frame 2 is provided with a sealing surface around the transfer channel 4, and a sealing ring is provided on the door panel 3 where it contacts the sealing surface. However, the sealing ring may hide or carry impurity particles, which can easily be stirred up when the door panel 3 rises and falls to cooperate with the door frame 2, causing the impurity particles to float in the transfer channel 4. See also Figure 3 When wafer 5 passes through wafer transfer channel 4, the impurity particles suspended in wafer transfer channel 4 are easily attached to the surface of wafer 5.

[0043] To solve the above-mentioned technical problems, this utility model provides a door valve assembly 10 for a chamber. The door valve assembly 10 is disposed at the wafer transfer port 51 of the chamber. The chamber can specifically be the chamber of a semiconductor process equipment, which can specifically be used for silicon epitaxial processes. However, this application embodiment is not limited thereto.

[0044] To better explain this embodiment, the following description is provided in conjunction with the accompanying drawings. It should be noted that the structures in the drawings are merely illustrative and do not impose specific limitations on the structures in this embodiment. Other structures derived from these drawings are also within the scope of protection of this invention.

[0045] See Figure 4The valve assembly 10 includes a door frame 100 with a certain thickness. The door frame 100 is provided with a wafer transfer channel 110, which extends through the door frame 100 along its thickness direction. The wafer 20 can pass through the wafer transfer channel 110 along the wafer transfer direction to enter the chamber, or leave the chamber after processing. The wafer transfer direction is parallel to the thickness direction of the door frame 100. The wafer transfer channel 110 has mutually perpendicular length and height directions, both perpendicular to the wafer transfer direction. Optionally, to close the wafer transfer channel 110, the valve assembly 10 may further include a door plate 200 and a drive mechanism. The door plate 200 is disposed at the bottom of the door frame 100 via the drive mechanism. The drive mechanism is used to drive the door plate 200 to rise to close the wafer transfer channel 110, or to drive the door plate 200 to fall to open the wafer transfer channel 110. Specifically, a sealing surface is provided on the door frame 100, and a sealing ring is provided on the side of the door panel 200 facing the door frame 100. The sealing of the door panel 200 through the sealing fit between the sealing ring and the sealing surface is achieved.

[0046] To supply gas to the film transfer channel 110, see [link / reference] Figure 5 The door frame 100 is also provided with an air inlet 120 and an air inlet channel 140. One end of the air inlet channel 140 is connected to the air inlet 120, and the other end is connected to an air source structure, which is used to supply gas. See also Figure 5 The air inlet 120 is located on the top wall of the transfer channel 110, and the air inlet 120 is connected to the transfer channel 110 and the air inlet channel 140. The air inlet channel 140 is used to supply gas to the air inlet 120, and the gas can be blown towards the transfer channel 110. The general direction of gas flow can be seen from [reference needed]. Figure 6 and Figure 7 , Figure 6 and Figure 7 The arrows indicate the direction of gas flow. The vent 120 can purge the wafer 20 during wafer transfer, preventing particle contamination. See [link to relevant documentation]. Figure 7 The air inlet 120 can also purge suspended impurity particles in the film transfer channel 110 when the film is not being transferred. See [link / reference]. Figure 6 .according to Figure 5 and Figure 6 The comparison between them, or Figure 5 and Figure 7 The comparison clearly shows that the gas provided by the air inlet 120 can effectively blow away impurity particles suspended in the plate transfer channel 110. Figures 5 to 7 The black dots (used to represent impurity particles) reduce the number of impurity particles in the transfer channel 110. The composition, flow rate, and temperature of the gas supplied by the air inlet 120 are not limited here; the preferred embodiment is one that maximizes the removal of impurity particles.

[0047] After the air inlet 120 supplies gas to the wafer transfer channel 110 to purge impurity particles, to prevent impurity particles from returning to the wafer transfer channel 110 and causing secondary contamination to the wafer 20, the door frame 100 is also provided with an air outlet 130, a collection chamber 160, and an exhaust channel 150. See [link to relevant documentation]. Figures 5 to 7 An exhaust port 130 is located on the bottom wall of the transfer channel 110, opposite to the inlet port 120, and is used to allow gas carrying impurity particles to pass through. The exhaust port 130 is connected to both the transfer channel 110 and the collection chamber 160. The collection chamber 160 is used to collect and contain the impurity particles carried by the gas when the inlet port 120 purges the transfer channel 110. The collection chamber 160 is connected to an exhaust channel 150, which is used to discharge the gas from the collection chamber 160, allowing the gas to carry the impurity particles away from the collection chamber 160 in a timely manner, preventing the impurity particles from returning to the transfer channel 110.

[0048] Optionally, one end of the exhaust channel 150 is connected to the collection chamber 160, and the other end is connected to the suction device. The suction device is used to draw in the gas in the collection chamber 160, so that the gas carrying impurity particles leaves the collection chamber 160 quickly.

[0049] In this embodiment, the valve assembly 10 has an air inlet 120 and an air outlet 130 at the transfer channel 110. The air inlet 120 supplies gas to the transfer channel 110 to purge impurity particles within the transfer channel 110. The air outlet 130 allows the gas to carry the impurity particles away from the transfer channel 110. The collection chamber 160, connected to the air outlet 130, can collect and contain the impurity particles carried by the gas, and discharges the gas from the collection chamber 160 through the exhaust channel 150, ensuring that the gas can carry the impurity particles away from the collection chamber 160 in a timely manner, preventing the impurity particles from returning to the transfer channel 110. This embodiment not only considers reducing the number of impurity particles in the wafer transfer channel 110 by purging the wafer transfer channel 110 with gas, but also considers the problem of secondary contamination after purging. The collection cavity 160 provides a buffer zone to prevent gas disturbance from sending impurity particles back into the wafer transfer channel 110 through the vent 130. This ensures that the surface of the wafer 20 is not contaminated by impurity particles floating in the wafer transfer channel 110 during the process of passing through the wafer transfer channel 110, thereby improving the yield of the wafer 20 process.

[0050] It should be noted that the specific locations of the air inlet 120 and the air outlet 130 are not limited in this embodiment. For example, they can be respectively located on both sides of the plate transfer channel 110. This embodiment is not limited thereto, and those skilled in the art can adjust the settings according to the actual situation.

[0051] See Figure 4The valve assembly 10 also includes an extraction device and a collection component 400 with a temporary storage chamber. The exhaust passage 150 is connected to the extraction device through the temporary storage chamber. The collection component 400 is connected to the exhaust passage 150 and is used to collect impurity particles that leave with the gas. The collection component 400 can be a canister-shaped structure with a temporary storage chamber inside for holding the gas discharged from the exhaust passage 150. The collection component 400 is located on one side of the door frame 100, and its specific location is not limited. This embodiment allows for qualitative analysis of the impurity particles collected by the collection component 400 to identify the source of the impurity particles, quickly pinpoint the source, and specifically remove the impurity particles, shortening the troubleshooting cycle and improving the machine's competitiveness.

[0052] In some embodiments, see Figures 5 to 7 The collecting cavity 160 is located below the transfer channel 110. The term "below" used here to indicate the relative position is based on the orientation shown in the attached drawings. The cross-section of the collecting cavity 160 parallel to the plane containing the door frame 100 is funnel-shaped, i.e., wider at the top and narrower at the bottom. Furthermore, the inner diameter of the collecting cavity 160 gradually decreases in the direction away from the transfer channel 110 to prevent impurity particles from accumulating on the inner wall of the collecting cavity 160.

[0053] In some embodiments, an intake valve 610 is provided on the intake channel 140, and the opening and closing of the intake channel 140 is controlled by controlling the intake valve 610. Similarly, an exhaust valve 620 is provided on the exhaust channel 150, and the opening and closing of the exhaust channel 150 is controlled by controlling the exhaust valve 620. For example, when the door panel 200 is lowered to the open state, both the intake valve 610 and the exhaust valve 620 are in the connected state, that is, the air source, the intake channel 140 and the air inlet 120 are connected, and gas can be supplied to the air inlet 120. The collection chamber 160, the exhaust channel 150 and the suction device are in the connected state, and gas can be extracted from the collection chamber 160. Then the wafer 20 passes through the wafer transfer channel 110. After the wafer transfer is completed, the door panel 200 rises to the closed state, both the intake valve 610 and the exhaust valve 620 are in the open state, and the collection chamber 160, the exhaust channel 150 and the suction device are in the disconnected state.

[0054] To improve the cleaning capability of the valve assembly 10, this embodiment of the invention provides multiple air inlets 120 on the door frame 100, each air inlet 120 being connected to the same air inlet channel 140. The openings of the multiple air inlets 120 are spaced apart along the length of the wafer transfer channel 110 on its inner wall surface. To further reduce impurity particles on the surface of the wafer 20, this embodiment can also utilize the air inlets 120 to blow clean the upper surface of the wafer 20. See also... Figure 7The area occupied by the multiple air inlets 120 includes a central area and edge areas located on both sides of the central area, with multiple air inlets 120 distributed in both the central and edge areas. Since the area at the center of the upper surface of the wafer 20 is larger than that at the edge, the density of the multiple air inlets 120 distributed in the central area is greater than that distributed in the edge areas, so as to specifically clean the upper surface of the wafer 20 and improve the cleaning effect.

[0055] See Figure 6 and Figure 7 The air outlet direction of the multiple air inlets 120 distributed in the middle area is perpendicular to the direction of the transfer plate. The air outlet direction of the multiple air inlets 120 distributed in the edge area is inclined to the side away from the middle area, relative to the air outlet direction of the multiple air inlets 120 distributed in the middle area.

[0056] Optionally, the multiple air inlets 120 distributed in the same edge area have the same air outlet direction.

[0057] Specifically, the air outlet direction of the multiple air inlets 120 distributed in the edge region is inclined at an angle greater than or equal to 3° relative to the air outlet direction of the multiple air inlets 120 distributed in the middle region towards the side away from the middle region. Optionally, the angle at which the air outlet direction of the multiple air inlets 120 distributed in the edge region is inclined towards the side away from the middle region relative to the air outlet direction of the multiple air inlets 120 distributed in the middle region can be 5°, 7°, 9°, or 13°, and will not be listed here.

[0058] For example, see Figure 6 The door frame 100 has 34 air inlets 120. Counting from the leftmost point, the 17th and 18th holes are air inlets 120 located in the middle area. The air outlet direction of these two air inlets 120 is vertical, perpendicular to the direction of the transmission plate. The air outlet direction of the 1st to 16th air inlets 120 from the left is deflected 3° to the left relative to the vertical direction. The air outlet direction of the 19th to 34th air inlets 120 from the left is deflected 3° to the right relative to the vertical direction.

[0059] In an optional embodiment, the shape of the axis of the intake passage 140 includes at least one U-shape to prevent impurity particles from entering the intake passage 140 through the intake port 120. Specifically, the shape of the axis of the intake passage 140 includes two U-shapes, see [link to relevant documentation]. Figures 5 to 7 .

[0060] In an optional embodiment, the axis of the exhaust passage 150 includes at least one U-shape to prevent backflow of gas. Specifically, the axis of the exhaust passage 150 includes two U-shapes, see [link to relevant documentation]. Figures 5 to 7 .

[0061] Similarly, to avoid backflow of gas, the channel of the air inlet 120 can be set to be curved along its extension direction.

[0062] Based on the same concept, a second aspect of this utility model also provides a semiconductor process apparatus. The semiconductor process apparatus includes a transfer chamber 80, a process chamber 50, and a gate valve assembly 10 for the chambers. The gate valve assembly 10 can adopt the structure described in the above embodiments. The gate valve assembly 10 is disposed between the transfer chamber 80 and the process chamber 50, for connecting the two to transfer a wafer 20; or for shutting off the transfer chamber and the process chamber 50 to allow the process chamber 50 to begin processing. The gate valve assembly 10 includes a door frame 100 and a door plate 200. The door frame 100 is provided with a wafer transfer channel 110, and both ends of the door frame 100 are respectively sealed to the transfer chamber and the process chamber 50, so that the wafer transfer channel 110 can connect the transfer chamber and the process chamber 50.

[0063] A door panel 200 is disposed on the door frame 100 to close or open the transfer channel 110. Optionally, the door panel 200 is disposed at the bottom of the door frame 100 via a drive mechanism, which drives the door panel 200 to rise to close the transfer channel 110 or to fall to open the transfer channel 110. Specifically, a sealing surface is provided on the door frame 100, and a sealing ring is provided on the side of the door panel 200 facing the door frame 100. The sealing of the transfer channel 110 by the sealing fit between the sealing ring and the sealing surface is achieved by the door panel 200 sealing the transfer channel 110.

[0064] Understandably, when the wafer transfer channel 110 is in the open state, the door plate 200 moves downward and the wafer 20 is about to pass through the wafer transfer channel 110. Cleaning the wafer transfer channel 110 at this time can prevent the valve assembly 10 from causing particulate contamination on the surface of the wafer 20.

[0065] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of this utility model, and the utility model is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of this utility model, and these modifications and improvements are also considered to be within the protection scope of this utility model.

Claims

1. A valve assembly for a chamber, disposed at the transfer port of the chamber, characterized in that, The valve assembly includes a door frame, the door frame having a plate-transfer channel extending through the door frame along its thickness direction, and the door frame also having an air inlet, an air outlet, an air inlet channel, an air outlet channel, and a collection chamber; wherein... The air inlet is located on the top wall of the plate transfer channel and is connected to the plate transfer channel and the air inlet channel. The air inlet channel is used to supply gas to the air inlet. The vent is located on the bottom wall of the transfer channel and is connected to the transfer channel and the collection chamber. The collection chamber is connected to the exhaust channel, which is used to discharge the gas in the collection chamber.

2. The valve assembly according to claim 1, characterized in that, The collecting cavity is located below the transfer channel. The cross-section of the collecting cavity in the plane parallel to the door frame is funnel-shaped, and the inner diameter of the collecting cavity gradually decreases in the direction away from the transfer channel.

3. The valve assembly according to claim 1 or 2, characterized in that, The door frame is provided with a plurality of air inlets, and the openings of the plurality of air inlets are distributed at intervals along the length direction of the transfer channel on the inner wall surface of the transfer channel; wherein, the area occupied by the plurality of air inlets includes a central area located in the middle and edge areas located on both sides of the central area, and the plurality of air inlets are distributed in both the central area and the edge areas. The density of the plurality of air inlets distributed in the middle region is greater than the density of the plurality of air inlets distributed in the edge region.

4. The valve assembly according to claim 3, characterized in that, The air outlet direction of the plurality of air inlets distributed in the intermediate region is perpendicular to the direction of the transfer plate; The air outlet direction of the plurality of air inlets distributed in the edge region is inclined to the side away from the middle region, relative to the air outlet direction of the plurality of air inlets distributed in the middle region.

5. The valve assembly according to claim 4, characterized in that, The multiple air inlets distributed in the same edge region all have the same air outlet direction.

6. The valve assembly according to claim 5, characterized in that, The air outlet direction of the plurality of air inlets distributed in the edge region is inclined at an angle greater than or equal to 3° relative to the air outlet direction of the plurality of air inlets distributed in the middle region towards the side away from the middle region.

7. The valve assembly according to claim 1, characterized in that, The air inlet has a curved channel along its extension direction.

8. The valve assembly according to claim 1, characterized in that, The shape of the axis of the air intake passage includes at least one U-shape; The shape of the axis of the exhaust passage includes at least one U-shape.

9. The valve assembly according to claim 1, characterized in that, The valve assembly also includes an air extraction device and a collection element with a temporary storage chamber, the exhaust passage being connected to the air extraction device through the temporary storage chamber.

10. A semiconductor process apparatus, characterized in that, The device includes a transfer chamber, a process chamber, and a valve assembly as described in any one of claims 1 to 9, wherein the valve assembly is disposed between the transfer chamber and the process chamber; the valve assembly further includes a door plate for closing or opening the transfer channel.

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