Air inlet device of polycrystalline furnace and polycrystalline furnace

Abstract

The utility model provides a polycrystal furnace air inlet device and polycrystal furnace, the polycrystal furnace air inlet device is applied to the polycrystal furnace, the polycrystal furnace comprises a shell with a reaction chamber, the polycrystal furnace air inlet device comprises a first air inlet assembly, a second air inlet assembly and a third air inlet assembly, the first air inlet assembly comprises a plurality of first air inlets, and the first air inlets are arranged on the side face of the bottom of the shell; the first gas inlet is configured to input process gas into the reaction chamber along a first direction; the first gas inlet pipe is communicated with the first gas inlet and extends upwards by a first height along the axis direction of the reaction chamber; the second gas inlet assembly comprises a plurality of second gas inlets which are formed in the side face of the bottom of the shell, the second gas inlets are configured to input process gas into the reaction cavity in the second direction, and an included angle is formed between the second direction and the first direction; the second air inlet pipe is communicated with the second air inlet and extends upwards by a second height along the axis direction of the reaction chamber, and the second height is different from the first height.

Description

TECHNICAL FIELD

[0001] The utility model relates to a semiconductor equipment technical field especially, it is a kind of polycrystal furnace air inlet device and polycrystal furnace. BACKGROUND

[0002] Current JSG 8-inch vertical polycrystal furnace has the following problems: JSG 8-inch vertical polycrystal silicon furnace pipe existing gas pipe design, can meet the uniformity requirement of <670 ℃ polycrystal silicon process, but silicon wafer warpage is high under this process condition. Improved process condition is to raise polycrystal silicon reaction temperature (>670 ℃, 670-680 ℃) to reduce silicon wafer warpage. But after raising process temperature (>670 ℃, 670-680 ℃), due to the large interval of gas pipe, the thickness of polycrystal silicon thin film in part area is thin, so the uniformity requirement of polycrystal silicon thin film in middle ring cannot be met. SUMMARY

[0003] Therefore, the utility model embodiment provides a polycrystal furnace air inlet device and polycrystal furnace, can improve the center gas flow of silicon wafer and can make radial airflow more uniform, improve the streamline density and uniformity of the bottom area of crystal boat, thereby improve the uniformity of polycrystal silicon thin film.

[0004] According to the inventive concept of one aspect of the utility model, a polycrystal furnace air inlet device is provided, applied to polycrystal furnace, the polycrystal furnace includes a shell with a reaction chamber, and the polycrystal furnace air inlet device includes:

[0005] First air inlet assembly, including:

[0006] A plurality of first air inlets are arranged on the side of the bottom of the shell, and the first air inlets are configured to input process gas into the reaction chamber along a first direction;

[0007] First air inlet pipe, in communication with the first air inlet, and extending upward along the reaction chamber axis direction to a first height;

[0008] Second air inlet assembly, including:

[0009] A plurality of second air inlets are arranged on the side of the bottom of the shell, and the second air inlets are configured to input process gas into the reaction chamber along a second direction, and the second direction forms an angle with the first direction;

[0010] Second air inlet pipe, in communication with the second air inlet, and extending upward along the reaction chamber axis direction to a second height, and the second height is different from the first height.

[0011] According to some embodiments of the utility model, the polycrystal furnace air inlet device further includes:

[0012] An air disc is connected with the shell, and the first air inlet and the second air inlet are arranged on the side of the air disc.

[0013] According to some embodiments of the present application, the polycrystal furnace air inlet device further comprises:

[0014] An air outlet is arranged on the side of the air disc, and the air outlet is arranged on the side of the first air inlet away from the second air inlet, and the air outlet is configured to discharge the exhaust gas of the reaction chamber in a third direction.

[0015] According to some embodiments of the present application, the included angle between the first direction and the second direction ranges from 90° to 150°, and the included angle between the first direction and the third direction ranges from 90° to 150°.

[0016] According to some embodiments of the present application, the number of the first air inlets and the first air pipes is two, and the number of the second air inlets and the second air pipes is four.

[0017] According to some embodiments of the present application, the ratio of the length of the two first air pipes to the height of the reaction chamber is 0.35-0.45:1, 0.45-0.55:1, respectively;

[0018] The ratio of the length of the four second air pipes to the height of the reaction chamber is 0.55-0.65:1, 0.65-0.75:1, 0.75-0.85:1, 0.85-0.95:1, respectively.

[0019] According to some embodiments of the present application, the polycrystal furnace air inlet device further comprises:

[0020] A quick connector is arranged on the first air inlet and the second air inlet, and the quick connector is configured to be connected with a process gas input pipeline.

[0021] According to another aspect of the present application, a polycrystal furnace is also provided, comprising:

[0022] A shell having a reaction chamber; and

[0023] The polycrystal furnace air inlet device according to the foregoing embodiments.

[0024] According to some embodiments of the present application, the polycrystal furnace further comprises:

[0025] A crystal boat is arranged in the reaction chamber, and the crystal boat is configured to accommodate the silicon wafer to be processed.

[0026] According to some embodiments of the present application, the polycrystal furnace further comprises:

[0027] A heating device is arranged in the reaction chamber, and the heating device is located between the first gas inlet pipe, the second gas inlet pipe and the crystal boat.

[0028] According to the polycrystal furnace gas inlet device and the polycrystal furnace, the position of the gas inlet device and the gas inlet pipe of the polycrystal furnace are optimized, the airflow concentration in the gas inlet area is dispersed, the flow field is more reasonable, the silicon wafer center airflow is increased, the radial airflow is more uniform, and the uniformity of the polycrystalline silicon film after the process temperature is increased is ensured. BRIEF DESCRIPTION OF DRAWINGS

[0029] The above and other objects, features and advantages of the present application will become more apparent from the following detailed description of the preferred embodiments of the present application taken in conjunction with the accompanying drawings. The accompanying drawings are provided to aid in the understanding of the present application and constitute a part of the specification, together with the written description. The accompanying drawings are not intended to limit the scope of the present application, but to aid in the understanding of the present application. In the drawings, the same reference numerals refer to the same components or steps.

[0030] Figure 1 Fig. 1 is a structural schematic diagram of a polycrystal furnace gas inlet device according to an embodiment of the present application.

[0031] Figure 2 Fig. 2 is a structural schematic diagram of a gas disc of a polycrystal furnace gas inlet device according to an embodiment of the present application.

[0032] In the above drawings, the meanings of the reference numerals are as follows:

[0033] 1 - shell;

[0034] 2 - first gas inlet assembly;

[0035] 21 - first gas inlet;

[0036] 22 - first gas inlet pipe;

[0037] 3 - second gas inlet assembly;

[0038] 31 - second gas inlet;

[0039] 32 - second gas inlet pipe;

[0040] 4 - gas disc;

[0041] 5 - exhaust port;

[0042] 6 - quick connector;

[0043] 7 - crystal boat. DETAILED DESCRIPTION

[0044] Clearly, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the protection scope of the present application.

[0045] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the term "includes" and tautological expressions thereof, such as "including," means the inclusion of the stated features, steps, operations, and / or components but not the exclusion of one or more other features, steps, operations, or components.

[0046] All terms used herein, including technical and scientific terms, have the meanings commonly understood by one of ordinary skill in the art, unless otherwise defined. It should be noted that the terms used herein should be interpreted as having meanings that are consistent with the context of the specification, and should not be interpreted in an idealized or overly formal manner.

[0047] In the case of using expressions similar to "at least one of A, B, and C, etc.", it should generally be interpreted to include at least one of each item, unless otherwise defined. For example, "a system having at least one of A, B, and C" should be interpreted to include a system having at least one of A alone, a system having at least one of B alone, a system having at least one of C alone, a system having at least one of A and B together, a system having at least one of A and C together, a system having at least one of B and C together, and / or a system having at least one of A, B, and C together, etc. In the case of using expressions similar to "at least one of A, B, or C, etc.", it should generally be interpreted to include at least one of each item, unless otherwise defined. For example, "a system having at least one of A, B, or C" should be interpreted to include a system having at least one of A alone, a system having at least one of B alone, a system having at least one of C alone, a system having at least one of A and B together, a system having at least one of A and C together, a system having at least one of B and C together, and / or a system having at least one of A, B, and C together, etc.

[0048] It should also be noted that the directional phrases mentioned in the embodiments, such as "up", "down", "front", "back", "left", "right", etc., are only the directions of the drawings, and are not intended to limit the protection scope of the present application. Throughout the drawings, the same elements are represented by the same or similar reference numerals. When the conventional structures or configurations may cause confusion to the understanding of the present application, they will be omitted.

[0049] In the related art, the working temperature of a JSG 8-inch vertical polycrystalline silicon furnace tube is generally 1,100-1,200°C.

[0050] <670℃, but, in order to meet the silicon wafer warping degree usually need to improve the reaction temperature, the reaction temperature rises, in view of the reaction chamber within the air pipe interval is large, can cause part of the area of polycrystalline silicon film thickness thin, thus unable to meet the polycrystalline silicon on the film uniformity requirements.

[0051] Figure 1 The structure schematic view of the polycrystal furnace air inlet device is shown in the embodiment of the utility model, and the structure schematic view of the air disc of the polycrystal furnace air inlet device is shown in the embodiment of the utility model. Figure 2 The structure schematic view of the polycrystal furnace air inlet device is shown in the embodiment of the utility model, and the structure schematic view of the air disc of the polycrystal furnace air inlet device is shown in the embodiment of the utility model.

[0052] In order to solve the above technical problems, according to the application concept of one aspect of the utility model, as shown in Figure 1 And Figure 2 As shown, a polycrystal furnace air inlet device is provided, which is applied to a polycrystal furnace, the polycrystal furnace comprises a shell 1 with a reaction chamber, and the polycrystal furnace air inlet device comprises a first air inlet assembly 2 and a second air inlet assembly 3. The first air inlet assembly 2 comprises a plurality of first air inlets 21 arranged on the side of the bottom of the shell 1, the first air inlets 21 are configured to input process gas into the reaction chamber in a first direction; a first air inlet pipe 22 is in communication with the first air inlets 21 and extends upward along the axis direction of the reaction chamber by a first height. The second air inlet assembly 3 comprises a plurality of second air inlets 31 arranged on the side of the bottom of the shell 1, the second air inlets 31 are configured to input process gas into the reaction chamber in a second direction, the second direction forms an angle with the first direction; a second air inlet pipe 32 is in communication with the second air inlets 31 and extends upward along the axis direction of the reaction chamber by a second height, the second height is different from the first height.

[0053] In the embodiment, by optimizing the position of the air inlet device and the air inlet pipe of the polycrystal furnace, the gas flow concentration in the air inlet area is dispersed, the gas flow field is more reasonable, the silicon wafer center gas flow is increased, and the radial gas flow is more uniform, so that the uniformity of the polycrystalline silicon film after the process temperature is increased is ensured.

[0054] According to some embodiments of the utility model, the shell 1 is the main structure of the polycrystal furnace, which is usually made of high-temperature-resistant and corrosion-resistant materials such as stainless steel or quartz glass. The shell 1 forms a closed space (reaction chamber) inside, the shell 1 is the main part of the polycrystalline silicon reaction process, provides the necessary temperature environment and sealing performance, and ensures that the polycrystalline silicon reaction can be carried out stably. The shell 1 contains all the components required for the polycrystalline silicon reaction process, such as crystal boats, heating elements, etc.

[0055] According to some embodiments of the utility model, the shell 1 (i.e., the reaction chamber) is in the form of a cylinder as a whole, and the crystal boat 7 is installed in the reaction chamber for carrying the silicon wafers to be processed.

[0056] According to some embodiments of the present utility model, the polycrystal furnace air inlet device further includes a gas disc 4, the gas disc 4 is connected with the shell 1, and the first air inlet 21 and the second air inlet 31 are arranged on the side of the gas disc 4 respectively.

[0057] In the embodiment, the gas disc 4 is located at the bottom of the boat 7 and is a key component for gas distribution in the polycrystal furnace, and the gas disc 4 is sealingly connected with the shell 1 to form the aforementioned reaction chamber.

[0058] According to some embodiments of the present utility model, the first air inlet pipe 22 and the second air inlet pipe 32 are both L-shaped pipes, wherein the short side of the L-shaped pipe is horizontally arranged and connected with the first air inlet 21 or the second air inlet 31, and the long side of the L-shaped pipe extends upward along the vertical direction, and by adjusting the length of the long side of the L-shaped pipe, the process gas can be delivered to different heights in the reaction chamber, thereby improving the gas field in the reaction chamber.

[0059] According to some embodiments of the present utility model, the polycrystal furnace air inlet device further includes an air outlet 5, the air outlet 5 is arranged on the side of the gas disc 4, the air outlet 5 is arranged on the side of the first air inlet 21 away from the second air inlet 31, and the air outlet 5 is configured to discharge the exhaust gas of the reaction chamber along a third direction.

[0060] In the embodiment, the air outlet 5 is configured to timely discharge the exhaust gas generated in the reaction process, prevent the exhaust gas from interfering with the reaction process, keep the environment in the furnace clean and stable, and ensure the smooth progress of the polycrystal silicon reaction.

[0061] According to some embodiments of the present utility model, the included angle between the first direction and the second direction ranges from 90° to 150°, and the included angle between the first direction and the third direction ranges from 90° to 150°.

[0062] According to some embodiments of the present utility model, preferably, the first direction, the second direction and the third direction are approximately 120°±10°.

[0063] According to some embodiments of the present utility model, preferably, the number of the first air inlet 21 and the first air inlet pipe 22 is both two, and the number of the second air inlet 31 and the second air inlet pipe 32 is both four.

[0064] According to some embodiments of the present utility model, the length of the two first air inlet pipes 22 and the height of the reaction chamber are in the ratio of 0.35-0.45:1, 0.45-0.55:1 respectively, and the length of the four second air inlet pipes 32 and the height of the reaction chamber are in the ratio of 0.55-0.65:1, 0.65-0.75:1, 0.75-0.85:1, 0.85-0.95:1 respectively.

[0065] According to some embodiments of the present application, preferably, the length of the two first gas inlets 22 is 0.4:1, 0.5:1 of the height of the reaction chamber, respectively. The length of the four second gas inlets 32 is 0.6:1, 0.7:1, 0.8:1, 0.9:1 of the height of the reaction chamber, respectively.

[0066] According to some embodiments of the present application, the polycrystal furnace gas inlet device further comprises a quick connector 6, which is arranged on the first gas inlet 21 and the second gas inlet 31, and the quick connector 6 is configured to be connected with the process gas input pipeline.

[0067] According to the application concept of another aspect of the present application, a polycrystal furnace is also provided, comprising: a shell 1 and a polycrystal furnace gas inlet device as in the above embodiments. The shell 1 has a reaction chamber; and the polycrystal furnace gas inlet device is arranged on the shell 1.

[0068] According to some embodiments of the present application, the polycrystal furnace further comprises a crystal boat 7, which is arranged in the reaction chamber, and the crystal boat 7 is configured to accommodate the silicon wafer to be processed.

[0069] According to some embodiments of the present application, the crystal boat 7 is a component in the polycrystal furnace for placing the silicon wafer, which is usually made of materials with high temperature resistance and low thermal expansion coefficient, such as graphite or silicon carbide, to ensure that the silicon wafer will not be displaced or deformed due to temperature changes or gas flow during the reaction process. The crystal boat 7 contains multiple slots for placing the silicon wafer, and the shape and size of the slots need to match the silicon wafer to ensure the stability of the silicon wafer during the reaction process.

[0070] According to some embodiments of the present application, the polycrystal furnace further comprises a heating device, which is arranged in the reaction chamber and located between the first gas inlet 22, the second gas inlet 32 and the crystal boat 7.

[0071] In the present embodiment, the heating device is usually composed of a heating element, a temperature controller and a sensor. The heating element may adopt resistance wire, electric heating tube or induction heating, etc., to generate heat through electric current and heat the temperature in the furnace to the required reaction temperature. The temperature controller and the sensor are used to monitor and control the temperature in the furnace to ensure the stability and accuracy of the temperature. By adjusting the temperature, the polycrystalline silicon reaction is ensured to be carried out within the optimal temperature range to obtain the best deposition effect and product quality.

[0072] According to some embodiments of the present application, the polycrystal furnace further comprises an exhaust pipeline and an exhaust pump, the exhaust pipeline guides the exhaust gas to the exhaust pump, and the exhaust pump extracts the exhaust gas out of the furnace through negative pressure. Further, a filtering device is also provided to purify the exhaust gas and prevent it from polluting the environment.

[0073] Thus far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It should be noted that the implementation manners not shown or described in the accompanying drawings or the specification are known to those skilled in the art, and are not described in detail. In addition, the definitions of the above-mentioned components are not limited to the specific structures, shapes or manners mentioned in the embodiments, and can be simply changed or replaced by those skilled in the art.

[0074] It should also be noted that in the specific embodiments of the present disclosure, unless there is an explicit indication or description indicating the opposite meaning, the numerical parameters in the specification and the appended claims are approximate values, which can be changed according to the required characteristics obtained through the content of the present disclosure. Specifically, all the numbers used in the specification and claims to express the size, range condition and the like of the composition should be understood as being modified by the term "about" in all cases. Generally, the meaning expressed is that it includes a change of ±10% in some embodiments, a change of ±5% in some embodiments, a change of ±1% in some embodiments, and a change of ±0.5% in some embodiments.

[0075] Those skilled in the art can understand that the features described in various embodiments and / or claims of the present application can be combined or / and combined, even if such combinations or combinations are not explicitly described in the present application. In particular, the features described in various embodiments and / or claims of the present application can be combined and / or combined without departing from the spirit and teachings of the present application. All these combinations and / or combinations fall within the scope of the present application.

[0076] The above-described specific embodiments further illustrate the purpose, technical solutions and advantages of the present application. It should be understood that the above-described is only a specific embodiment of the present application and is not intended to limit the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A polycrystal furnace gas inlet device characterized by comprising: The application is applied to a polycrystal furnace, which comprises a shell with a reaction chamber, and the polycrystal furnace gas inlet device comprises: A first gas inlet assembly comprises: A plurality of first gas inlets arranged on the side of the bottom of the shell, the first gas inlets being configured to input process gas into the reaction chamber in a first direction; A first gas inlet pipe in communication with the first gas inlets and extending upward along the axis direction of the reaction chamber by a first height; A second gas inlet assembly comprises: A plurality of second gas inlets arranged on the side of the bottom of the shell, the second gas inlets being configured to input process gas into the reaction chamber in a second direction, the second direction being at an angle with the first direction; A second gas inlet pipe in communication with the second gas inlets and extending upward along the axis direction of the reaction chamber by a second height, the second height being different from the first height.

2. The polycrystal furnace gas inlet device according to claim 1, wherein The polycrystal furnace gas inlet device further comprises: A gas disc connected with the shell, the first gas inlets and the second gas inlets being arranged on the side of the gas disc, respectively.

3. The polycrystal furnace gas inlet device according to claim 2, wherein The polycrystal furnace gas inlet device further comprises: An exhaust port arranged on the side of the gas disc, the exhaust port being arranged on the side of the first gas inlets away from the second gas inlets, the exhaust port being configured to exhaust waste gas of the reaction chamber in a third direction.

4. The polycrystal furnace gas inlet device according to claim 3, wherein The angle between the first direction and the second direction ranges from 90° to 150°, and the angle between the first direction and the third direction ranges from 90° to 150°.

5. The polycrystal furnace gas inlet apparatus according to claim 1, wherein The number of the first gas inlets and the first gas inlet pipes is both two, and the number of the second gas inlets and the second gas inlet pipes is both four.

6. The polycrystal furnace gas inlet device according to claim 5, wherein The ratio of the length of the two first gas inlet pipes to the height of the reaction chamber is 0.35-0.45:1 and 0.45-0.55:1, respectively. The ratio of the length of the four second gas inlet pipes to the height of the reaction chamber is 0.55-0.65:1, 0.65-0.75:1, 0.75-0.85:1 and 0.85-0.95:1, respectively.

7. The polycrystal furnace gas inlet device according to claim 2, wherein The polycrystal furnace gas inlet device further comprises: A quick connector arranged on the first gas inlets and the second gas inlets, the quick connector being configured to be connected with a process gas input pipeline.

8. A polycrystal furnace characterized by comprising: Comprise: A shell with a reaction chamber; The polycrystal furnace gas inlet device according to any one of claims 1-7.

9. The polycrystal furnace of claim 8 wherein, Further comprise: A crystal boat arranged in the reaction chamber, the crystal boat being configured to accommodate silicon wafers to be processed.

10. The polycrystal furnace of claim 9 wherein, Further comprise: A heating device arranged in the reaction chamber, the heating device being located between the first gas inlet pipe, the second gas inlet pipe and the crystal boat.

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