Pressure sensing thin film device

Abstract

The utility model discloses a pressure sensing thin film device, which comprises a base material layer, a first metal thin film layer and a second metal thin film layer, wherein the first metal thin film layer and the second metal thin film layer are positioned on the same surface of the base material layer, and a hollow area positioned on the surface of the base material layer is arranged between the first metal thin film layer and the second metal thin film layer. A sensing area and a non-sensing area are arranged above the first metal thin film layer, the hollow area and the second metal thin film layer, the hollow area further comprises a plurality of hollow vertical strips, a first hollow strip and a second hollow strip which are arranged in parallel at intervals, the adjacent hollow vertical strips in the plurality of hollow vertical strips are connected end to end through a hollow transverse strip, and the first hollow strip and the second hollow strip are arranged in parallel at intervals. The plurality of hollow-out vertical strips and hollow-out horizontal strips are located in the sensing area, and the first metal thin film layer and the second metal thin film layer are located in the non-sensing area and located between one sides of the hollow-out areas and are isolated through the first hollow-out strips. According to the pressure sensing thin film device, the sensing uniformity in the sensing area is improved, and the detection precision and sensitivity of the pressure sensing thin film device are also improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of sensor especially relates to a pressure sensing thin film device. BACKGROUND

[0002] The pressure sensing thin film device is a kind of sensor that perceives pressure and converts pressure signal into electric signal output according to certain rule, and it is usually composed of pressure-sensitive element and signal processing unit, and can be used for monitoring and testing different equipment;The application field of pressure sensing thin film device is wide, such as medical equipment, environmental monitoring, aerospace, industrial automation, consumer electronics and automobile industry etc.

[0003] The pressure sensing thin film device can be divided into piezoresistive, capacitive, piezoelectric or other types according to working principle, wherein piezoresistive pressure sensing thin film device utilizes piezoresistive effect, and generally adopts upper and lower electrode or single electrode form;Capacitive pressure sensing thin film device utilizes capacitance change;And piezoelectric sensor detects pressure change through the piezoresistive effect of semiconductor material.The most widely used is piezoresistive pressure sensing thin film device, which has lower price, higher precision and better linearity.The detection accuracy and sensitivity of existing pressure sensing thin film device need to be further improved. SUMMARY

[0004] The technical problem to be solved by the utility model is to provide a pressure sensing thin film device, which improves the uniformity of induction in induction area, and improves the detection accuracy and sensitivity of pressure sensing thin film device.

[0005] To achieve the above-mentioned purpose, the technical scheme adopted by the utility model is as follows: a pressure sensing thin film device, comprising: a substrate layer, a first metal thin film layer and a second metal thin film layer located on the same surface of the substrate layer, a hollow area located on the surface of the substrate layer is arranged between the first metal thin film layer and the second metal thin film layer, the area above the first metal thin film layer, the hollow area and the second metal thin film layer is divided into induction area and non-induction area, the hollow area further comprises: a plurality of hollow vertical strips arranged in parallel, a first hollow strip and a second hollow strip, adjacent hollow vertical strips in the plurality of hollow vertical strips are connected by a hollow horizontal strip at the head and tail of each hollow vertical strip, the plurality of hollow vertical strips and hollow horizontal strips are located in the induction area, the first metal thin film layer and the second metal thin film layer are isolated by the first hollow strip between the non-induction area and one side of the hollow area, the first metal thin film layer and the second metal thin film layer are isolated by the second hollow strip between the non-induction area and the other side of the hollow area, and a piezoelectric induction layer covers the induction area.

[0006] The further improved technical scheme in the above technical scheme is as follows:

[0007] 1. The non-induction area is located at the periphery of the induction area.

[0008] 2. The number of the hollow vertical bars is at least 6.

[0009] 3. The number of the hollow horizontal bars is at least 5.

[0010] 4. The hollow vertical bars and the hollow horizontal bars are vertically arranged.

[0011] 5. The base material layer is formed by stacking the PCT sub-layer and the TUP sub-layer.

[0012] 6. The PCT sub-layer is in contact with the first metal thin film layer and the second metal thin film layer.

[0013] Thanks to the above technical solutions, the present application has the following advantages compared with the prior art:

[0014] The pressure sensing thin film device of the present application is provided with a hollow area between the first metal thin film layer and the second metal thin film layer, which further comprises: a plurality of hollow vertical bars and first and second hollow bars arranged in parallel at intervals, the adjacent hollow vertical bars are connected by a hollow horizontal bar at the head and tail of each of the hollow vertical bars, the hollow vertical bars and the hollow horizontal bars are located in an induction area, and a piezoelectric induction layer is arranged on the induction area, which not only increases the contact area of the first metal thin film layer, the second metal thin film layer and the piezoelectric induction layer in the induction area, but also improves the uniformity of the induction in the induction area, and improves the detection accuracy and sensitivity of the pressure sensing thin film device. BRIEF DESCRIPTION OF DRAWINGS

[0015] FIG. 1 is a structural schematic diagram of the pressure sensing thin film device of the present application; Figure 1

[0016] FIG. 2 is a partial cross-sectional structural schematic diagram of the pressure sensing thin film device of the present application. Figure 2 Figure 1

[0017] In the above drawings: 1, base material layer; 101, PCT sub-layer; 102, TUP sub-layer; 21, first metal thin film layer; 22, second metal thin film layer; 3, hollow area; 31, hollow vertical bar; 32, first hollow bar; 33, second hollow bar; 34, hollow horizontal bar; 41, induction area; 42, non-induction area; 5, piezoelectric induction layer. DETAILED DESCRIPTION

[0018] The present application can be further understood by the specific embodiments given below, but they are not a limitation of the present application.

[0019] The present application will be further described below in conjunction with the embodiments.​​​

[0020] Embodiment 1: A pressure sensing thin film device, comprising: a substrate layer 1, a first metal thin film layer 21 and a second metal thin film layer 22 located on the same surface of the substrate layer 1, a hollow area 3 located on the surface of the substrate layer 1 between the first metal thin film layer 21 and the second metal thin film layer 22, a sensing area 41 and a non-sensing area 42 above the first metal thin film layer 21, the hollow area 3 and the second metal thin film layer 22, the hollow area 3 further comprising: a plurality of hollow vertical strips 31 arranged in parallel with a spacing, a first hollow strip 32 and a second hollow strip 33, adjacent hollow vertical strips 31 in the plurality of hollow vertical strips 31 are connected by a hollow horizontal strip 34 at the head and tail of each, the plurality of hollow vertical strips 31 and the hollow horizontal strip 34 are located in the sensing area 41, the first metal thin film layer 21 and the second metal thin film layer 22 are isolated by the first hollow strip 32 between the non-sensing area 42 and one side of the hollow area 3, the first metal thin film layer 21 and the second metal thin film layer 22 are isolated by the second hollow strip 33 between the non-sensing area 42 and the other side of the hollow area 3, and a piezoelectric sensing layer 5 covers the sensing area 41.

[0021] The above-mentioned non-sensing area 42 is located at the periphery of the sensing area 41.

[0022] The number of the above-mentioned hollow vertical strips 31 is 7, and the number of the above-mentioned hollow horizontal strips 34 is 6.

[0023] The above-mentioned hollow vertical strips 31 and the hollow horizontal strips 34 are arranged vertically.

[0024] The above-mentioned PCT sub-layer 101 is in contact with the first metal thin film layer 21 and the second metal thin film layer 22.

[0025] Embodiment 2: A pressure sensing thin film device, comprising: a substrate layer 1, a first metal thin film layer 21 and a second metal thin film layer 22 located on the same surface of the substrate layer 1, a hollow area 3 located on the surface of the substrate layer 1 between the first metal thin film layer 21 and the second metal thin film layer 22, a sensing area 41 and a non-sensing area 42 above the first metal thin film layer 21, the hollow area 3 and the second metal thin film layer 22, the hollow area 3 further comprising: a plurality of hollow vertical strips 31 arranged in parallel with a spacing, a first hollow strip 32 and a second hollow strip 33, adjacent hollow vertical strips 31 in the plurality of hollow vertical strips 31 are connected by a hollow horizontal strip 34 at the head and tail of each, the plurality of hollow vertical strips 31 and the hollow horizontal strip 34 are located in the sensing area 41, the first metal thin film layer 21 and the second metal thin film layer 22 are isolated by the first hollow strip 32 between the non-sensing area 42 and one side of the hollow area 3, the first metal thin film layer 21 and the second metal thin film layer 22 are isolated by the second hollow strip 33 between the non-sensing area 42 and the other side of the hollow area 3, and a piezoelectric sensing layer 5 covers the sensing area 41.

[0026] The non-induction area 42 is located at the periphery of the induction area 41.

[0027] The number of the hollow vertical bars 31 is 9, and the number of the hollow horizontal bars 34 is 8.

[0028] The substrate layer 1 is formed by stacking the PCT sub-layer 101 and the TUP sub-layer 102.

[0029] The PCT sub-layer 101 is in contact with the first metal thin film layer 21 and the second metal thin film layer 22.

[0030] When the pressure sensing thin film device of the embodiment is used, the hollow area arranged between the first metal thin film layer and the second metal thin film layer further comprises: a plurality of hollow vertical bars arranged in parallel with a spacing, a first hollow bar and a second hollow bar, the adjacent hollow vertical bars in the plurality of hollow vertical bars are connected by a hollow horizontal bar at the head and tail of each of the hollow vertical bars, the plurality of hollow vertical bars and the hollow horizontal bar are located in an induction area, and a piezoelectric induction layer is arranged on the induction area, which not only increases the contact area between the first metal thin film layer, the second metal thin film layer and the piezoelectric induction layer in the induction area, but also improves the uniformity of the induction in the induction area, and improves the detection accuracy and sensitivity of the pressure sensing thin film device.

[0031] The above embodiment is only for illustrating the technical concept and characteristics of the present application, and the purpose is to enable those skilled in the art to understand the content of the present application and to implement it, and it cannot limit the protection scope of the present application. Any equivalent changes or modifications made according to the spirit and essence of the present application shall be covered within the protection scope of the present application.

Claims

1. A pressure-sensing thin-film device, characterized by: The application relates to a substrate layer (1), a first metal film layer (21) and a second metal film layer (22) on the same surface of the substrate layer (1), a hollow area (3) on the surface of the substrate layer (1) between the first metal film layer (21) and the second metal film layer (22), an induction area (41) and a non-induction area (42) above the first metal film layer (21), the hollow area (3) and the second metal film layer (22), the hollow area (3) further comprising: a plurality of hollow vertical strips (31) arranged in parallel at intervals, a first hollow strip (32) and a second hollow strip (33), adjacent hollow vertical strips (31) are connected by a hollow horizontal strip (34) at the head and tail of each of the hollow vertical strips (31), the plurality of hollow vertical strips (31) and the hollow horizontal strip (34) are located in the induction area (41), the first metal film layer (21) and the second metal film layer (22) are isolated by the first hollow strip (32) between the non-induction area (42) and one side of the hollow area (3), and the first metal film layer (21) and the second metal film layer (22) are isolated by the second hollow strip (33) between the non-induction area (42) and the other side of the hollow area (3), and a piezoelectric induction layer (5) covers the induction area (41). The non-induction area (42) is located at the periphery of the induction area (41).

2. The pressure-sensing thin-film device of claim 1, wherein: The number of the hollow vertical strips (31) is at least six.

3. The pressure-sensing thin-film device of claim 1, wherein: The number of the hollow horizontal strips (34) is at least five.

4. The pressure-sensing thin-film device of claim 1, wherein: The hollow vertical strips (31) and the hollow horizontal strips (34) are arranged vertically.

5. The pressure-sensing thin-film device of claim 1, wherein: The substrate layer (1) is composed of a PCT sublayer (101) and a TUP sublayer (102).

6. The pressure-sensing thin-film device of claim 1, wherein: The PCT sublayer (101) is in contact with the first metal film layer (21) and the second metal film layer (22).

7. The pressure-sensing thin-film device of claim 6, wherein: ​

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