Low-temperature-drift high-temperature-resistant pressure transmitter without lead sintering packaging
By using leadless sintering encapsulation technology, the problems of lead breakage and bulky size of traditional pressure transmitters at high temperatures are solved, thereby improving signal stability and vibration resistance at high temperatures and miniaturizing the overall structure.
Patent Information
- Application Number
- CN202522374246.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-10
- Publication Date
- 2025-12-16
- Estimated Expiration
- 2035-11-10
AI Technical Summary
Traditional pressure transmitters suffer from problems such as lead bond breakage, large size, leakage risk, and poor resistance to vibration and shock in high-temperature environments, leading to performance degradation or failure.
Employing leadless sintering packaging technology, a dense bonding layer is formed between the glass component and the base shell, and the signal lead and the glass component form an integrated metal-glass sealed structure. The pressure chip and the signal lead are directly connected, eliminating the need for traditional gold wire bonding. Combined with the overall sealed structure and high-temperature resistant materials, a miniaturized design is achieved.
It effectively avoids lead wire breakage at high temperatures, improves vibration resistance and electrical reliability, ensures signal stability, is suitable for high temperature and high vibration environments, and has a miniaturized overall size.
Smart Images

Figure CN223678689U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model belongs to pressure transmitter technical field, concretely is a kind of low temperature drift high temperature resistant pressure transmitter of leadless sintering packaging. BACKGROUND
[0002] Pressure transmitter is a kind of key industrial sensor that converts pressure signal into standard electric signal, is widely used in the measurement of various fluid pressures, and the traditional pressure transmitter generally uses diffusion silicon piezoresistive pressure sensor core, there is PN junction structure of P-type area and N-type area inside the core, when working temperature increases, the reverse leakage current of PN junction significantly increases, resulting in the obvious temperature drift of output signal, PN junction leakage current can significantly increase, resulting in the sharp decline of sensor performance even failure, limit its application in high temperature environment;
[0003] At the same time, the traditional core usually adopts the way of wire bonding (such as gold wire binding) to realize electrical connection, and fills silicon oil in the sensor to transfer pressure and heat insulation, this "wire filling oil" structure has obvious defects: wire bonding place is prone to "brittle gold" phenomenon at high temperature, leading to wire breakage, secondly, the oil-filled structure is bulky, and there is a risk of liquid leakage, the overall structure has poor vibration impact resistance, and the environmental adaptability is insufficient, the traditional wire bonding and oil-filled structure still have problems of soldering point falling off, oil expansion deterioration and difficult to reduce volume at high temperature;
[0004] Therefore: how to reduce the mechanical and thermal damage to the chip during sintering packaging of pressure transmitter is a technical problem to be solved in the prior art. UTILITY MODEL CONTENTS
[0005] The utility model aims at: for the problem of how to reduce the mechanical and thermal damage to the chip during sintering packaging of pressure transmitter in prior art, set up a kind of low temperature drift high temperature resistant pressure transmitter of leadless sintering packaging.
[0006] In order to realize the above-mentioned purpose, the utility model adopts the technical scheme that:
[0007] A kind of low temperature drift high temperature resistant pressure transmitter of leadless sintering packaging, including shell, inductive pedestal and pressure chip, the pressure chip is arranged in the inductive pedestal, the inductive pedestal is arranged in the shell;
[0008] The induction base comprises a base shell and a glass piece, the glass piece is fixedly embedded in the base shell, a dense bonding layer is formed between the glass piece and the base shell, a through hole is formed in the glass piece, a signal lead wire is installed in the through hole, one end of the signal lead wire extends into the induction base and contacts with an electrode of the pressure chip, the other end of the signal lead wire extends to the outside of the shell and forms a signal lead-out end, and a metal-glass integrated sealing structure is formed between the signal lead wire and the glass piece.
[0009] Preferably, a closed cavity is formed on the side of the induction base facing the shell.
[0010] Preferably, a filter screen is arranged on the side of the induction base facing a pipe connecting mouth arranged at one end of the shell, and the filter screen is used for isolating impurities.
[0011] Preferably, a gap is left between the pressure chip and the filter screen.
[0012] Preferably, a signal processing plate is arranged at the other end of the shell, and a gap is left between the lead-out end of the signal lead wire and the signal processing plate.
[0013] Preferably, the shell and the induction base are fixedly connected and form an integrated sealing structure.
[0014] Preferably, the signal lead wire and the glass piece are fixedly connected in airtight sealing.
[0015] Preferably, the signal processing plate is sealingly installed in the shell.
[0016] Preferably, the shell further comprises a rear cover and a high-temperature signal line.
[0017] Preferably, the rear cover and the high-temperature signal line are in separable connection.
[0018] In summary, due to the adoption of the above technical scheme, the present application has the following beneficial effects:
[0019] 1. The glass piece is fixedly embedded in the base shell and a dense bonding layer is formed between the glass piece and the base shell, and a metal-glass integrated sealing structure is formed between the signal lead wire and the glass piece, thereby effectively avoiding the problem of "brittle gold" fracture of traditional gold wire bonding under high temperature, and by canceling the traditional oil-filled wire structure, adopting leadless integrated sintering packaging, the signal lead wire is directly connected with the pressure chip, thereby reducing the mechanical or thermal damage to the core body during packaging or service stage.
[0020] 2, The utility model discloses an induction base with the shell forms integral sealing structure, the gap between the pressure chip and the filter screen forms the buffer zone, thereby reducing the influence of outside vibration and impact to the pressure chip, and further improve the vibration resistance stability of pressure transmitter;
[0021] 3, The utility model discloses a signal processing board with high temperature signal line all adopt high temperature -resistant material, and realize separable sealing cooperation through the back cover, effectively improve the electrical reliability and maintenance convenience of signal lead -out end, guarantee the stability of output signal under long -term high temperature operation, the volume is significantly reduced, and the overall appearance size is not greater than phi 12 47.5mm, satisfy the miniaturization installation demand under high temperature, high vibration, high sealing environment. BRIEF DESCRIPTION OF DRAWINGS
[0022] Fig. 1 It is a kind of low temperature drift high temperature resistance pressure transmitter of leadless sintering package structure schematic diagram;
[0023] Fig. 2 It is a kind of low temperature drift high temperature resistance pressure transmitter of leadless sintering package sectional structure schematic diagram;
[0024] Fig. 3 It is a kind of low temperature drift high temperature resistance pressure transmitter of leadless sintering package local sectional structure schematic diagram.
[0025] Mark in drawing:1-shell, 2-induction base, 3-pressure chip, 4-base shell, 5-glass piece, 6-through hole, 7-signal lead, 8-connecting pipe nozzle, 9-filter screen, 10-signal processing board, 11-back cover, 12-high temperature signal line. DETAILED DESCRIPTION
[0026] The utility model will be described in detail in connection with the drawings.
[0027] To make the purpose, technical scheme and advantage of the embodiment of the utility model more clear, the technical scheme in the embodiment of the utility model will be clearly and completely described in connection with the drawings. Obviously, the described embodiment is a part of embodiment of the utility model, not all embodiments.
[0028] Therefore, the following detailed description of the embodiment of the utility model is not intended to limit the scope of the claimed utility model, but only represents some embodiments of the utility model. Based on the embodiments in the utility model, all other embodiments obtained by those skilled in the art without creative labor belong to the scope of protection of the utility model.
[0029] It should be noted that the embodiments in the utility model and the features and technical solutions in the embodiments can be combined with each other without conflict.
[0030] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.
[0031] In the description of this utility model, it should be noted that the terms "upper," "lower," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this utility model is in use, or the orientation or positional relationship commonly understood by those skilled in the art. These terms are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this utility model. In addition, the terms "first," "second," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.
[0032] In Example 1: Figs. 1 to 3 As shown, the present invention describes a leadless sintered encapsulated low-temperature drift and high-temperature resistant pressure transmitter, which includes a housing 1, a sensing base 2, and a pressure chip 3. The pressure chip 3 is disposed inside the sensing base 2, and the sensing base 2 is disposed inside the housing 1.
[0033] The sensing base 2 includes a base shell 4 and a glass component 5. The glass component 5 is fixedly embedded in the base shell 4, and a dense bonding layer is formed between the glass component 5 and the base shell 4. A through hole 6 is provided on the glass component 5, and the through hole 6 penetrates the glass component 5. A signal lead 7 is installed in the through hole 6. One end of the signal lead 7 extends into the sensing base 2 and contacts the electrode of the pressure chip, and the other end extends to the outside of the shell 1 to form a signal lead-out end. A metal-glass integrated sealing structure is formed between the signal lead 7 and the glass component 5.
[0034] In this embodiment, the glass component 5 is fixed inside the base housing 4 by sintering. The signal lead 7 is integrally connected to the glass component 5 by sintering and sealing. The pressure chip adopts a high-temperature SOI pressure sensor core, which does not have a PN junction structure inside and has excellent high-temperature and low-leakage characteristics. The pressure chip and the signal lead 7 are directly connected by sintering conductive materials, abandoning the traditional gold wire bonding structure. The sensor is packaged by a leadless sintering process, which allows the sensor to measure temperatures from -55℃ to 200℃. The pressure chip and the signal lead 7 are integrally sintered with conductive materials, which ensures good electrical performance and gives the sensor excellent vibration resistance. It is suitable for high-temperature and high-vibration testing environments, forming a stable connection interface between the core electrode and the signal lead 7, thereby reducing mechanical or thermal damage to the core during packaging or service.
[0035] As a preferred embodiment, based on the above scheme, the sensing base 2 further forms a closed cavity on the side facing the housing 1. With this structural arrangement, the closed cavity can effectively isolate external impurities, thereby reducing contamination of the core and ensuring a stable pressure measurement environment for the pressure chip.
[0036] One end of the housing 1 is provided with a connector 8, and the sensing base 2 is provided with a filter screen 9 on the side facing the connector 8. The filter screen 9 is used to isolate impurities. With this structure, the filter screen 9 can filter out solid particles in the measured medium, further reducing the entry of impurities and thus improving the anti-clogging performance of the sensing base 2.
[0037] As a preferred embodiment, based on the above scheme, a gap is further provided between the pressure chip and the filter 9. With this structural arrangement, the gap forms a buffer area, which can effectively reduce the damage to the pressure chip caused by the impact pressure of the measured medium.
[0038] In Example 2: Figs. 1 to 3 As shown, the present invention describes a leadless sintered encapsulated low-temperature drift and high-temperature resistant pressure transmitter. Based on the above scheme, a signal processing board 10 is further provided at the other end of the housing 1, and a gap is left between the lead-out end of the signal lead 7 and the signal processing board 10.
[0039] In this embodiment, the signal processing board 10 employs high-temperature resistant circuit components, including high-temperature resistant printed circuit boards, high-temperature resistant resistors, high-temperature resistant capacitors, high-temperature resistant instrumentation amplifiers, and high-temperature resistant cables. All materials used in the product are capable of operating in high-temperature environments. To address the temperature drift performance of the high-temperature SOI pressure sensor core, a resistor network model is designed to compensate, calibrate, and normalize the output signal of the high-temperature SOI pressure sensor core. The core output signal is then sent to a high-temperature instrumentation amplifier for signal amplification, obtaining a voltage signal of 0.5V~4.5V proportional to the measured pressure. The gap can absorb mechanical vibration, further improving the vibration resistance of the pressure transmitter.
[0040] As a preferred embodiment, based on the above scheme, the housing 1 and the sensing base 2 are further fixedly connected, forming an integral sealed structure. With this structural arrangement, the fixed connection between the housing 1 and the sensing base 2 is preferably an integrally sealed pressure-bearing structure achieved through a sintering process, further improving the sealing performance of the pressure transmitter at high temperatures.
[0041] As a preferred embodiment, based on the above scheme, further preferably, the signal lead 7 and the glass component 5 are connected in an airtight, sealed manner. With this structural arrangement, the glass component 5 and the signal lead 7 are preferably formed by high-temperature sintering, allowing the glass component 5 to form a bubble-free, airtight bond with the metal surface, thereby maintaining sealing performance at high temperatures.
[0042] In Example 3: such as Figs. 1 to 3 As shown, this utility model describes a leadless sintered encapsulated low-temperature drift and high-temperature resistant pressure transmitter. Based on the above-mentioned design, the signal processing board 10 is further sealed and installed within the housing 1. This structural arrangement, through the application of leadless sintering technology, eliminates the traditional wire-filled oil core design, significantly reducing the size of the pressure transmitter and achieving a miniaturized design for the high-temperature resistant pressure transmitter, with an overall size not exceeding φ12*47.5mm.
[0043] As a preferred embodiment, based on the above-described scheme, and further preferably, the housing 1 also includes a rear cover 11 and a high-temperature signal line 12. With this structural arrangement, the high-temperature signal line 12 is used to realize the output transmission of electrical signals, and the rear cover 11 makes the housing 1 form a closed loop, thereby improving the overall sealing performance of the pressure transmitter.
[0044] As a preferred embodiment, on the basis of the above scheme, further, preferably, the rear cover 11 and the high-temperature signal line 12 are in separable connection. With this structure, the signal processing plate 10 or the high-temperature signal line 12 can be conveniently maintained or replaced by the worker, and meanwhile, the sealing connection of the shell 1 and the induction base 2 is not affected.
[0045] The above merely describes preferred embodiments of the present application and is not intended to limit the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. A leadless sintered packaged low temperature drift high temperature pressure transmitter characterized in that, The application relates to a pressure sensor, which comprises a shell, a sensing base and a pressure chip, wherein the pressure chip is arranged in the sensing base, and the sensing base is arranged in the shell. The sensing base comprises a base shell and a glass piece, the glass piece is fixedly arranged in the base shell, a dense bonding layer is formed between the glass piece and the base shell, a through hole is arranged on the glass piece and penetrates through the glass piece, a signal lead wire is arranged in the through hole, one end of the signal lead wire extends into the sensing base and is in contact with an electrode of the pressure chip, the other end of the signal lead wire extends to the outside of the shell and forms a signal leading-out end, and a metal-glass integrated sealing structure is formed between the signal lead wire and the glass piece.
2. The leadless sintered packaged low temperature drift high temperature pressure transmitter according to claim 1, wherein, The sensing base is provided with a closed cavity on the side facing the shell.
3. The leadless, sintered packaged, low temperature drift, high temperature pressure transmitter of claim 2, wherein, One end of the shell is provided with a connecting pipe nozzle, and the sensing base is provided with a filter screen on the side facing the connecting pipe nozzle, the filter screen is used for isolating impurities.
4. The leadless, sintered packaged, low temperature drift, high temperature pressure transmitter of claim 3, wherein, A gap is left between the pressure chip and the filter screen.
5. The leadless, sintered packaged, low temperature drift, high temperature pressure transmitter of claim 4, wherein, The other end of the shell is provided with a signal processing plate, and a gap is left between the leading-out end of the signal lead wire and the signal processing plate.
6. The leadless, sintered packaged, low temperature drift, high temperature pressure transmitter of claim 5, wherein, The shell and the sensing base are fixedly connected and form an integral sealing structure.
7. The leadless, sintered packaged, low temperature drift, high temperature pressure transmitter of claim 6, wherein, The signal lead wire and the glass piece are fixedly connected in airtight sealing.
8. The leadless, sintered packaged, low temperature drift, high temperature pressure transmitter of claim 7, wherein, The signal processing plate is sealingly arranged in the shell.
9. The leadless, sintered packaged, low temperature drift, high temperature pressure transmitter of claim 8, wherein, The shell further comprises a rear cover and a high-temperature signal line.
10. The leadless, sintered packaged, low temperature drift, high temperature pressure transmitter of claim 9, wherein, The rear cover and the high-temperature signal line are in separable connection.