High-voltage-resistant electronic tag chip and charging cable

Abstract

The utility model discloses a high voltage resistant electronic tag chip and a charging cable. The high voltage resistant electronic tag chip comprises a power supply pin; a GND pin; the eMarker bare chip comprises a first power supply end and a grounding end, and the grounding end is connected with the GND pin; the source electrode of the depletion type field effect transistor is connected with the first power supply end of the eMarker bare chip, the drain electrode of the depletion type field effect transistor is connected with the power supply pin, and the grid electrode is connected with first voltage. The utility model has the advantages of simple circuit structure, few devices, easy sealing and low cost.

Description

TECHNICAL FIELD

[0001] The utility model belongs to the technical field of electronic circuit, especially relate to a kind of high-voltage-resistant electronic tag chip and charging cable. BACKGROUND

[0002] In recent years, with the high-speed development of PD protocol, the working voltage (VBUS) of USB interface has reached 48V at most. In the physical structure of USB Type-C connector, CC signal pin and VBUS power pin are adjacent. When aging, water, ash and other situations occur, there is a possibility of instantaneous short circuit between CC signal pin and VBUS power pin, which may break through the related pins of eMarker chip and cause certain safety hazards, reducing the reliability of the cable.

[0003] At the same time, higher charging current also brings potential connector overheating problem. Among many solutions, expanding temperature sensing and over-temperature protection function for eMarker chip has great advantages. The traditional eMarker chip takes power from VCONN power line, generally 5V, and cannot continuously perform temperature detection and over-temperature protection in the scene of VCONN power failure. Therefore, the eMarker chip with continuous over-temperature protection function should support VBUS power and VCONN power dual power supply, which also means that such eMarker chip must have the ability to work normally under high VBUS voltage.

[0004] In addition, some certification test items (such as EIA 364-20) for USB Type-C connector and cable require to apply high voltage of about 100V or even 150V to VBUS pin, which also requires eMarker chip not to be damaged in test environment.

[0005] In summary, in order to improve the reliability of eMarker chip and eMarker cable, make it have over-temperature protection and other expansion functions and pass the certification test smoothly, the voltage resistance of eMarker chip, especially the voltage resistance of VBUS directly supplying power to the chip, is put forward with higher requirements.

[0006] The mainstream eMarker is generally designed for 5V power supply, and its voltage resistance is generally not more than 20V, which belongs to relatively low voltage. The manufacturing process and technology are relatively mature and low cost. Since there are relatively few manufacturing processes supporting 150V high voltage, it is not economical to design a high-voltage-resistant eMarker alone, and the cost is high. Therefore, the high-voltage-resistant eMarker chip of the prior art is usually realized by adding high-voltage-resistant processing to a relatively low-voltage mature eMarker, and the specific internal structure is as follows Figure 1As shown, including high-voltage-resistant enhanced MOSFET (E-MOS), relatively low-voltage eMarker die, resistor R, voltage stabilizing diode DZ. In order to reduce the volume, it is necessary to seal the enhanced MOSFET in the resistor R, the voltage stabilizing diode together with the eMarker die. Since the resistor is a non-silicon device, it is difficult to package and wire due to different materials. The bottom plate of the voltage stabilizing diode die is the cathode, which cannot be wired to the MOSFET gate level under the conventional packaging die process, causing sealing difficulties, and the devices used are large in volume, and the overall cost is relatively high. Figure 1 As shown, including high-voltage-resistant enhanced MOSFET (E-MOS), relatively low-voltage eMarker die, resistor R, voltage stabilizing diode DZ. In order to reduce the volume, it is necessary to seal the enhanced MOSFET in the resistor R, the voltage stabilizing diode together with the eMarker die. Since the resistor is a non-silicon device, it is difficult to package and wire due to different materials. The bottom plate of the voltage stabilizing diode die is the cathode, which cannot be wired to the MOSFET gate level under the conventional packaging die process, causing sealing difficulties, and the devices used are large in volume, and the overall cost is relatively high. The utility model discloses a kind of high-voltage-resistant electronic tag chips and charging cables.

[0007] The utility model discloses a kind of high-voltage-resistant electronic tag chips and charging cables.

[0008] Technical scheme: a kind of high-voltage-resistant electronic tag chip, comprising:

[0009] Power supply pin;

[0010] GND pin;

[0011] eMarker die, including first power supply end and ground terminal, ground terminal connects the GND pin;

[0012] Depletion mode field effect transistor, sealed with eMarker die, the source of depletion mode field effect transistor is connected with the first power supply end of eMarker die, drain connects the power supply pin, and gate connects first voltage V1.

[0013] Further, let GND pin voltage as 0V reference voltage, then 0V≤V1≤5V.

[0014] Further, it further includes first resistance, one end of the first resistance is connected with the gate of depletion mode field effect transistor, and the other end is connected with GND pin.

[0015] Further, the gate of depletion mode field effect transistor is directly connected with GND pin.

[0016] Further, eMarker die further includes first voltage output end, for outputting the first voltage, and the first voltage output end is connected with the gate of depletion mode field effect transistor.

[0017] Further, it further includes packaging frame, and the drain of depletion mode field effect transistor is connected with the bottom plate of packaging frame, and the substrate of eMarker die is insulated between the bottom plate of packaging frame.

[0018] Further, the depletion mode field effect transistor is a depletion mode MOSFET or JFET.

[0019] A charging cable comprises the high-voltage-resistant electronic tag chip.

[0020] Further, a thermistor is further included, one end of the thermistor is connected to the temperature detection pin of the high-voltage-resistant electronic tag chip, and the other end is grounded.

[0021] A charging cable comprises:

[0022] The eMarker chip is packaged by an eMarker die, and comprises a first power supply pin and a GND pin, and the GND pin is grounded.

[0023] The depletion mode field effect transistor is an independent device, the source of the depletion mode field effect transistor is connected to the first power supply pin of the eMarker chip, the drain is connected to a power supply, and the gate is connected to a first voltage V1, 0V≤V1≤5V.

[0024] Compared with the prior art, the high-voltage-resistant electronic tag chip and the charging cable have the following beneficial effects:

[0025] (1) The depletion mode field effect transistor is used to replace the enhancement mode field effect transistor, so that the resistor R and the stabilizing diode DZ can be omitted, the eMarker die with relatively low voltage can be easily packaged together, the circuit structure is simple, the devices are few, the packaging is easy, and the cost is low.

[0026] (2) On the basis of the existing eMarker chip, the high-voltage-resistant effect of the eMarker chip can be realized at low cost, and the eMarker chip with the over-temperature protection function can be better applied, so as to provide protection for the smooth implementation of the over-temperature protection function. BRIEF DESCRIPTION OF DRAWINGS

[0027] Figure 1 FIG. 1 is a structural schematic diagram of a high-voltage-resistant electronic tag chip of the prior art;

[0028] Figure 2 FIG. 2 is a structural schematic diagram of a high-voltage-resistant electronic tag chip of embodiment one;

[0029] Figure 3 FIG. 3 is a structural schematic diagram of a charging cable of embodiment one;

[0030] Figure 4 FIG. 4 is a structural schematic diagram of a high-voltage-resistant electronic tag chip supporting double power supply of embodiment one;

[0031] Figure 5 FIG. 5 is a structural schematic diagram of a high-voltage-resistant electronic tag chip of embodiment two;

[0032] Figure 6 This is a schematic diagram of the high-voltage resistant electronic tag chip in Example 3;

[0033] Figure 7 This is a schematic diagram of the charging cable in Example 4. Detailed Implementation

[0034] The present invention will be further explained and described below with reference to the accompanying drawings and specific embodiments.

[0035] Example 1:

[0036] A high-voltage resistant electronic tag chip, such as Figure 2 As shown, it includes:

[0037] Power supply pin VBUS;

[0038] GND pin;

[0039] The eMarker die includes a first power supply terminal VH and a ground terminal, with the ground terminal connected to the GND pin.

[0040] The depletion-type field-effect transistor is packaged with the eMarker die. The depletion-type field-effect transistor refers to a field-effect transistor (FET) with a negative gate-on voltage. In this embodiment, a depletion-type MOSFET is selected, but a JFET can also be used, as in other embodiments. Figure 2 The D-MOS in the circuit has its source connected to the first power supply terminal VH of the eMarker die, its drain connected to the power supply pin VBUS, and its gate connected to the first voltage V1. The depletion-type MOSFET is a high-voltage depletion-type N-MOS.

[0041] Let the voltage at the GND pin be taken as the 0V reference voltage, and the voltage value of the first voltage be V1. Then, 0V≤V1≤5V.

[0042] In this embodiment, the gate of the depletion-type MOSFET is directly connected to the GND pin, and V1 = 0V.

[0043] Compared with the prior art, the high-voltage resistant electronic tag chip in this embodiment uses a high-voltage resistant depletion-mode MOSFET instead of the original high-voltage resistant enhancement-mode MOSFET, and there is no resistor connected between the gate and drain of the depletion-mode MOSFET, nor is there a Zener diode connected between the gate and source. This directly eliminates the need for... Figure 1 The circuit consists of two components: resistor R and Zener diode DZ. The gate-source turn-off voltage of a depletion-type MOSFET is negative; the required eMarker die supply voltage is obtained by selecting the gate-source turn-off voltage parameter of the depletion-type MOSFET.

[0044] In this embodiment, the depletion mode field effect transistor is sealed together with the eMarker die to form a high-voltage resistant electronic tag chip, which eliminates the problem of difficult sealing of the resistor R and the voltage stabilizing diode DZ. The high-voltage resistant electronic tag chip further includes a packaging frame, and further, the drain of the depletion mode field effect transistor is connected to the bottom plate of the packaging frame, and the substrate of the eMarker die is insulated from the bottom plate of the packaging frame. The overall circuit structure is simple, has few devices, small size, easy to seal, and low cost.

[0045] A charging cable containing the above high-voltage resistant electronic tag chip, which can be a Type-C cable. In order to further realize the over-temperature protection function, the charging cable can further contain a thermistor R NTC As shown in Figure 3 , the thermistor R NTC has one end connected to the NTC pin of the chip and the other end grounded. The NTC pin of the chip is a temperature detection pin. The current temperature of the eMarker chip reading cable is read, and necessary protection is implemented when the temperature is abnormal.

[0046] Further, the high-voltage resistant electronic tag chip can further include a second power pin VCONN, as shown in Figure 4 , the eMarker die can further include a second power supply end, and the second power supply end is connected to the second power pin VCONN. Optionally, connecting the second power pin VCONN to the VCONN power line realizes double power supply.

[0047] Embodiment two:

[0048] The difference between embodiment two and embodiment one is that the first voltage is a voltage higher than the voltage of the GND pin, as shown in Figure 5 , the high-voltage resistant electronic tag chip further includes a first resistor R1, one end of the first resistor R1 is connected to the gate of the depletion mode MOSFET, and the other end is connected to the GND pin.

[0049] Embodiment three:

[0050] The difference between embodiment three and embodiment one or two is that the first voltage is output by the eMarker die, as shown in Figure 6 , the eMarker die further includes a first voltage output end, and the first voltage output end is connected to the gate of the depletion mode MOSFET, and provides a lower level of not more than 5V, usually about 0V, as the first voltage.

[0051] Embodiment four:

[0052] Example four differs from examples one to three in that the charging cable of example four comprises a separate eMarker chip and a separate device depletion mode MOSFET, i.e. the depletion mode MOSFET is not co-encapsulated with the eMarker die.

[0053] In this embodiment, as shown in FIG. 4, a charging cable comprises: Figure 7

[0054] An eMarker chip encapsulated by an eMarker die, comprising a first power supply pin and a GND pin, the GND pin being grounded.

[0055] A depletion mode MOSFET, the depletion mode MOSFET being a separate device, the source of the depletion mode MOSFET being connected to the first power supply pin of the eMarker chip, the drain of the depletion mode MOSFET being connected to a power supply VBUS, and the gate of the depletion mode MOSFET being connected to a first voltage V1, 0V≤V1≤5V.

[0056] The gate of the depletion mode MOSFET is directly grounded or grounded through a first resistor or connected to a first voltage output pin of the eMarker chip, the first voltage output pin of the eMarker chip being used to output the first voltage V1.​

Claims

1. A high voltage resistant electronic tag chip, characterized by, Comprising: a power pin; a GND pin; an eMarker die comprising a first power terminal and a ground terminal, the ground terminal being connected to the GND pin; a depletion-mode field effect transistor, which is packaged together with the eMarker die, the source of the depletion-mode field effect transistor being connected to the first power terminal of the eMarker die, the drain being connected to the power pin, and the gate being connected to a first voltage V1.

2. The high voltage resistant electronic tag chip of claim 1, wherein, Taking the voltage of the GND pin as a 0V reference voltage, then 0V≤V1≤5V.

3. The high voltage resistant electronic tag chip according to claim 1 or 2, characterized in that, Further comprising a first resistor, one end of the first resistor being connected to the gate of the depletion-mode field effect transistor, and the other end being connected to the GND pin.

4. The high voltage resistant electronic tag chip according to claim 1 or 2, wherein, The gate of the depletion-mode field effect transistor is directly connected to the GND pin.

5. The high voltage resistant electronic tag chip according to claim 1 or 2, wherein, The eMarker die further comprises a first voltage output terminal for outputting the first voltage, and the first voltage output terminal is connected to the gate of the depletion-mode field effect transistor.

6. The high voltage resistant electronic tag chip according to claim 1 or 2, wherein, Further comprising a packaging frame, the drain of the depletion-mode field effect transistor being connected to the bottom plate of the packaging frame, and the substrate of the eMarker die being insulated from the bottom plate of the packaging frame.

7. The high voltage resistant electronic tag chip according to claim 1 or 2, wherein, The depletion-mode field effect transistor is a depletion-mode MOSFET or a JFET.

8. A charging cable, characterized by A high-voltage-resistant electronic tag chip as claimed in any one of claims 1 to 7.

9. The charging cable of claim 8, wherein, Further comprising a thermistor, one end of the thermistor being connected to a temperature detection pin of the high-voltage-resistant electronic tag chip, and the other end being grounded.

10. A charging cable, characterized by Comprising: an eMarker chip packaged by an eMarker die, comprising a first power pin and a GND pin, and the GND pin being grounded; a depletion-mode field effect transistor, which is an independent device, the source of the depletion-mode field effect transistor being connected to the first power pin of the eMarker chip, the drain being connected to a power supply, and the gate being connected to a first voltage V1, 0V≤V1≤5V.

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