Power device
By integrating power module design and top heat dissipation, the problems of installation complexity and poor heat dissipation in small-sized plastic-encapsulated products are solved, achieving efficient heat dissipation and consistent electrical performance, and promoting the miniaturization and integration of electronic devices.
Patent Information
- Application Number
- CN202422940152.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-29
- Publication Date
- 2025-12-16
- Estimated Expiration
- 2034-11-29
AI Technical Summary
Existing small-size plastic-encapsulated products suffer from complex installation processes, high costs, inconsistent electrical parameters leading to deviations in performance, and poor heat dissipation, which limit the miniaturization and integration design of electronic devices.
It adopts an integrated power module design, including multiple chips and heat dissipation devices in a plastic package. It uses a thermally conductive layer and an air-cooled heat sink to achieve top heat dissipation. Multiple chips are integrated on a single substrate and connected in parallel. Thermally conductive silicone is used as a thermally conductive layer to improve heat dissipation efficiency, and temperature is detected by a thermistor.
It improves heat dissipation performance, reduces thermal resistance, shortens installation time, reduces installation steps and the number of components, improves the consistency and stability of electrical performance, and enhances the compactness and integration of electronic devices.
Smart Images

Figure CN223680107U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the field of semiconductor packaging, and specifically relates to a power device. BACKGROUND
[0002] With the rapid development of science and technology and the continuous improvement of the performance requirements of electronic products, the demand for power modules is also growing. Miniaturization and integration have become the mainstream trend of electronic product design. However, there are some limitations in the actual application of existing small-size plastic packaging products.
[0003] For example: the traditional small-size plastic packaging products usually adopt multiple small packaging single tubes in parallel to realize the required electrical performance. First, the installation process is complex and tedious, and each small packaging single tube needs to be individually mounted on the substrate, which not only increases the installation time but also increases the installation difficulty and cost; second, due to the difference in electrical parameters between each small packaging single tube, this parallel method may cause consistency deviation during use, thereby affecting the stability and reliability of the entire circuit, and in severe cases, it may even cause device damage; in addition, the traditional packaging method also has the problems of large installation size and poor heat dissipation, since a certain gap needs to be maintained between each small packaging single tube to ensure good electrical connection and heat dissipation effect, the multiple packaging parallel method will occupy a large size space, which is not conducive to the miniaturization and integration design of electronic equipment; at the same time, due to the existence of an insulating layer in the middle of the aluminum substrate, the heat transfer is blocked, and the heat dissipation effect is not ideal, which further limits the performance and life of the electronic equipment.
[0004] In view of the above problems in the prior art, there is an urgent need for a new packaging technology to replace the traditional multiple small packaging single tube parallel method to meet the needs of modern electronic equipment for high performance, high reliability and compact design. SUMMARY
[0005] In view of the above problems in the prior art, the present application provides a power device, comprising: a power module comprising a plastic package and a plurality of groups of chips located inside the plastic package; a heat dissipation device located on the side of the power module away from the substrate.
[0006] Optionally, a heat-conducting layer is provided between the power module and the heat dissipation device, and the heat dissipation direction of the power device is from the power module through the heat-conducting layer to the heat dissipation device.
[0007] Optionally, the heat dissipation device comprises an air-cooled heat sink.
[0008] Optionally, the power module further comprises a substrate inside the plastic package, the plurality of groups of chips are fixed to the substrate, each group of chips comprises a plurality of chips, the plurality of chips in each group of chips are arranged in parallel; and a terminal, the terminal comprises main power terminals and signal terminals, and the terminal extends from inside the plastic package to outside the plastic package, one end of the terminal inside the plastic package is connected to the substrate, and the other end extending to outside the plastic package is fixed to the packaging substrate.
[0009] Optionally, the plastic package is provided with mounting holes away from two sides of the terminal, and the number of the mounting holes is greater than or equal to two.
[0010] Optionally, the main power terminals comprise two groups, each group of main power terminals comprises at least two main power terminals, and the interval distance between two adjacent main power terminals in each group of main power terminals is greater than or equal to 1 / 3 of the width of the main power terminal and less than or equal to 1 / 2 of the width of the main power terminal.
[0011] Optionally, the main power terminals are provided with main power terminal mounting holes away from one side of the plastic package.
[0012] Optionally, a thermistor is further included, the thermistor is in communication with the signal terminal to detect and output the temperature of the power module.
[0013] Optionally, the signal terminals comprise two groups, each group of signal terminals comprises at least two signal terminals, and the signal terminals are arranged on the same side of the plastic package as the main power terminals.
[0014] The signal terminals are distributed on both sides of the main power terminals and / or the signal terminals are distributed on the same side of the main power terminals.
[0015] As described above, the power module provided by the utility model has at least the following beneficial technical effects:
[0016] Improved heat dissipation performance: the power module provided by the utility model improves the substrate material and increases the heat dissipation device through the integrated power module, so that the top heat dissipation mode is realized, the heat dissipation efficiency is improved, and the thermal resistance is reduced.
[0017] High integration: the power module provided by the utility model adopts large-size packaging, integrates a plurality of chips on a substrate to form a power module, and has a significant reduction in occupied space compared with the parallel connection mode of a plurality of small packaging single tubes. This not only saves installation space, but also helps to improve the compactness and integration of the entire system. In addition, the installation time is greatly shortened, the installation complexity is reduced, the installation steps and the number of required devices are reduced, and the cost can be further reduced.
[0018] Improve the reliability of the power module: by integrating multiple chips in parallel on a single substrate, the power module can effectively eliminate the consistency deviation problem caused by the difference in electrical parameters between different small package single tubes. This integrated design ensures high consistency in electrical performance of all chips, thereby improving the reliability and stability of the entire power module. Reduce the installation size. BRIEF DESCRIPTION OF DRAWINGS
[0019] Figure 1 The structure diagram of the power device provided by the present application is shown.
[0020] Figure 2 The structure diagram of the power device provided by the present application is shown.
[0021] Figure 3 The structure diagram of the power module provided by the present application is shown.
[0022] Figure 4 The structure diagram of the power module provided by the present application is shown. Figure 3 The structure diagram of the power module provided by the present application is shown.
[0023] Figure 5 The structure diagram of the power module provided by the present application is shown. Figure 3 The structure diagram of the power module provided by the present application is shown.
[0024] Figure 6 The structure diagram of the power module provided by the present application is shown. Figure 3 The structure diagram of the power module provided by the present application is shown.
[0025] Figure 7 The structure diagram of the power module provided by the present application is shown.
[0026] Figure 8 The structure diagram of the power module provided by the present application is shown. DETAILED DESCRIPTION
[0027] The embodiments of the present application are described below through specific and concrete examples, and those skilled in the art can easily understand other advantages and effects of the present application from the content disclosed in the specification. The present application can also be implemented or applied in different specific embodiments, and each detail in the specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present application.
[0028] It should be noted that the diagram provided in the embodiment only schematically illustrates the basic concept of the utility model, and although the diagram only shows the components related to the utility model, it is not drawn according to the number, shape and size of the components in actual implementation, and the shape, number, positional relationship and proportion of each component in actual implementation can be changed at will under the premise of realizing the technical solution of the utility model, and the component layout form can also be more complex.
[0029] As shown in Figure 1 , a structure schematic diagram of a conventional package single tube installation is shown. As shown in Figure 1 , it can be seen that the conventional single tube package 00 needs to install each package single tube 001 on the substrate 002, and a certain gap needs to be reserved between the package single tube 001 and the package single tube 001. Such a packaging method will occupy a large size, and the heat dissipation direction of the package single tube 001 is directed from the package single tube 001 to the substrate. Since the package single tube 001 is directly attached to the substrate 002, the substrate 002 usually adopts an aluminum substrate with an insulating layer, and usually has a large thermal resistance, so the heat dissipation is poor.
[0030] The embodiment provides a power device. As shown in Figure 2 , a structure schematic diagram of a power device is shown. As shown in Figure 2 , it can be seen that the power device 20 provided by the embodiment includes a power module 10 and a heat dissipation device 203, and the heat dissipation device 203 is arranged on the top surface of the power module 10. The power device 20 is arranged on a packaging substrate 201, and the power module 10 is fixed on the packaging substrate 201 by solder 204.
[0031] The power device 20 provided by the embodiment further includes a heat conduction layer 205 between the power module 10 and the heat dissipation device 203. The heat conduction layer 205 is used to further accelerate the heat conduction efficiency and connect the power module 10 and the heat dissipation device 203. Generally, the heat conduction layer 205 includes heat-conducting silicone, silicone grease, inorganic phase-change metal and the like. In the embodiment, the heat-conducting silicone with good heat conduction performance and filling performance is used as the heat conduction layer 205. Generally, the heat dissipation device 203 can be a heat pipe radiator, a water-cooled radiator, an air-cooled radiator, a fan and other heat dissipation devices. Specifically, the heat dissipation device 203 used in the embodiment is an air-cooled radiator. The power device 20 provided by the embodiment can realize top heat dissipation, that is, the heat transfer direction is from the power module 10 to the heat dissipation device 203.
[0032] Specifically, the embodiment provides a power module, as shown in Figure 3As shown, the power module 10 of this embodiment includes a molding compound 110, a substrate 120, and terminals 130. The substrate 120 is disposed inside the molding compound 110 and includes multiple sets of chips, each set including multiple chips 121, and the chips 121 in each set are arranged in parallel. The terminals 130 include a main power terminal 131 and a signal terminal 132. The terminals 130 extend from the inside of the molding compound 110 to the outside of the molding compound 110. One end of the terminal 130 inside the molding compound 110 is connected to the substrate 120, and the other end extending to the outside of the molding compound 110 is fixed to the packaging substrate 201. The main power terminal 131 is electrically connected to the substrate 120, and the signal terminal 132 is communicatively connected to the substrate 120.
[0033] Specifically, the molding compound 110 is a box-shaped structure. Generally, the size of the molding compound 110 can be determined according to the actual size and number of chips 121 required. Figure 4 As shown, it is displayed as Figure 3 The diagram shows the structural schematic of the power module 10 in the YX plane. Generally, the length L1 of the molding compound 110 is between 30 mm and 150 mm, and more specifically, the length L1 of the molding compound 110 is between 50 mm and 100 mm. In this embodiment, the length L1 of the molding compound 110 is 73 mm. Figure 5 As shown, it is displayed as Figure 2 The diagram shows the structural schematic of the power module 10 in the XZ plane. Generally, the width L1' of the molding compound 110 is between 20 mm and 120 mm, and more specifically, the width L1' of the molding compound 110 is between 40 mm and 80 mm. Specifically, in this embodiment, the width L1' of the molding compound 110 is 63 mm. Generally, the thickness h1 of the molding compound 110 is between 5 mm and 15 mm. Specifically, in this embodiment, the thickness h1 of the molding compound 110 is 9 mm.
[0034] like Figure 3 As shown, the molding compound 110 in this embodiment is also provided with mounting holes 111 for mounting the power module 10 onto the packaging substrate 201. Generally, the number, size, and position of the mounting holes 111 can be set according to the size of the molding compound 110. Generally, the number of mounting holes 111 is greater than or equal to two. Optionally, the number of mounting holes 111 can be two, three, four, six, etc. The diameter r1 of the mounting holes 111 is between 3 mm and 5 mm. Specifically, in this embodiment, four mounting holes 111 are provided, symmetrically arranged in pairs on both sides of the molding compound 110 away from the terminals, and the diameter r1 of the mounting holes 111 is 4.3 mm.
[0035] Please continue reading. Figure 3The power module 10 provided by the embodiment further includes terminals 130, and the terminals 130 include main power terminals 131. The types of the main power terminals 131 include main power positive electrode terminals, main power negative electrode terminals, main power output terminals, and the like. The main power terminals 131 are in a zigzag shape, one end of which is electrically connected to the substrate 120 in the plastic package 110, and the other end of which extends to the outside of the plastic package 110, and is used to fix the power module 10 to the packaging substrate 201. Generally, the main power terminals 131 include two groups, and the two groups of main power terminals are oppositely arranged on two sides of the plastic package 110, and are not arranged on the same side as the mounting hole 111. The number of the main power terminals 131 in the two groups of main power terminals can be the same or different. Each group of main power terminals includes at least two main power terminals 131. Each group of main power terminals can include two, three, or more main power terminals 131. In the embodiment, the number of the main power terminals 131 in the two groups of main power terminals is the same, and each group of main power terminals includes two main power terminals 131. Specifically, in the embodiment, two main power positive electrode terminals S1 and two main power negative electrode terminals S2 are included.
[0036] Generally, the size of the main power terminal 131 can be set according to the actual size of the power module 10. Generally, the length of the main power terminal 131 outside the plastic package 110 is greater than or equal to 2 / 3 of the length of the entire main power terminal 131. Generally, the length L2 of the main power terminal 131 from the plastic package 110 is between 14 mm and 18 mm. Specifically, in the embodiment, the length L2 of the main power terminal 131 from the plastic package 110 is 16.2 mm. Generally, the width L2' of the main power terminal 131 is less than or equal to the length L2 of the main power terminal 131 from the plastic package 110. Generally, the width L2' of the main power terminal 131 is between 10 mm and 14 mm. Specifically, in the embodiment, the width L2' of the main power terminal 131 is 12 mm. Generally, the interval distance a between adjacent main power terminals 131 in each group of main power terminals along the circumference of the plastic package 110 is greater than or equal to 1 / 3 of the width L2' of the main power terminal 131, and less than or equal to 1 / 2 of the width L2' of the main power terminal 131. Generally, the interval distance a is between 4 mm and 6 mm. Specifically, in the embodiment, the interval distance a between adjacent main power terminals 131 in each group of main power terminals along the circumference of the plastic package 110 is 4.5 mm.
[0037] Specifically, please continue to refer to Figure 3The main power terminal 131 is provided with a main power terminal mounting hole 1311 on the side away from the plastic package body 110. The main power terminal mounting hole 1311 is used to fix the power module 10 to the packaging substrate 201. Generally, the size of the main power terminal mounting hole 1311 can be set according to the size of the main power terminal 131. Generally, the diameter r2 of the main power terminal mounting hole 1311 is between 3 mm and 6 mm. Specifically, in the embodiment, the diameter r2 of the main power terminal mounting hole 1311 is 4.4 mm.
[0038] Please continue to refer to Figure 3 The terminal 130 further includes signal terminals 132, which are in communication connection with the substrate 120. Generally, the types of the signal terminals 132 include signal input, signal output, ground pin, trigger pin, data pin, drain pin, control pin, and additional function pin. The signal terminals 132 are divided into two groups and are oppositely arranged on the two sides of the plastic package body 110 and are located on the same side as the main power terminal 131. The number of the signal terminals 132 in the two groups of signal terminals can be the same or different. Generally, each group of signal terminals includes at least two signal terminals 132. Each group of signal terminals can include two, three, four, five, etc. signal terminals 132. Specifically, as shown in Figure 2 the embodiment, one group of signal terminals includes three signal terminals 132, and the other group of signal terminals includes four signal terminals 132. Generally, the signal terminals 132 can be distributed on the same side of the main power terminal 131, or the signal terminals 132 can be scattered and distributed on the two sides of the main power terminal 131. Specifically, in the embodiment, on the side with three signal terminals 132, the three signal terminals 132 are scattered and distributed on the two sides of the main power terminal 131, one signal terminal 132 is on the left side of the two main power terminals 131, and two signal terminals 132 are on the other side; on the side with four signal terminals 132, the four signal terminals 132 are concentrated and distributed on one side of the main power terminal 131. Specifically, in the embodiment, the signal terminals 132 include a first control terminal G1, a first control terminal G2, a first signal output terminal D1, a first signal output terminal D2, a first temperature detection terminal T1, a first temperature detection terminal T2, and a current detection terminal S2.
[0039] Generally, the signal terminals 132 have a length that matches the length of the power module 10. The length of the signal terminals 132 outside the plastic package 110 is about 3 / 4 of the total length of the signal terminals 132. Generally, the length L3 of the signal terminals 132 outside the plastic package 110 is between 8 mm and 12 mm. In the present embodiment, the length L3 of the signal terminals 132 outside the plastic package 110 is 9.5 mm. Generally, the width L3' of the signal terminals 132 is between 0.5 mm and 1.0 mm. In the present embodiment, the width L3' of the signal terminals 132 is 0.8 mm. Generally, the distance b between the closest two signal terminals 132 in each group of signal terminals along the circumference of the plastic package 110 is between 3 times and 8 times the width L3' of the signal terminals 132. Generally, the distance b is between 2 mm and 7 mm. In the present embodiment, the distance b between the closest two signal terminals 132 along the circumference of the plastic package 110 is 3.5 mm.
[0040] Please continue to refer to Figure 4 The thickness h2 of the terminals 130 (including the main power terminals 131 and the signal terminals 132) is between 0.5 mm and 1.0 mm. In the present embodiment, the thickness h2 of the terminals 130 is 0.8 mm. Generally, the end of the terminals 130 outside the plastic package 110 has a height difference h2' with the outer shell of the plastic package 110, which facilitates the filling of solder when the power module 10 is fixed to the packaging substrate 201. Generally, the height difference h2' is between 0 mm and 0.3 mm. In the present embodiment, the height difference h2' of the end of the terminals 130 outside the plastic package 110 with the plastic package 110 is 0.1 mm.
[0041] Generally, the length of the power module 10 (including the terminals 130) can be designed according to actual needs. Specifically, the length of the power module 10 depends on the length of the plastic package 110 and the length of the terminals 130 (including the main power terminals 131 and the signal terminals 132). Generally, the length L4 of the power module 10 is equal to the length L1 of the plastic package 110 plus the length L2 of the main power terminals 131. Specifically, the length of the power module 10 is between 40 mm and 160 mm. Further, the length L4 of the power module 10 is between 64 mm and 118 mm. In the present embodiment, the length of the power module 10 is 105.3 mm.
[0042] As shown in Figure 6 , the XY plane structure of the power module is shown; and Figure 6It can be seen that the substrate 120 is arranged inside the plastic package 10. Generally, the size of the substrate 120 can be adjusted according to the actual requirements of the circuit board and the number of the chips 121. The types of the substrate 120 include DBC (direct copper clad ceramic substrate), DPC (direct plated copper ceramic substrate), HTCC (high temperature co-fired multilayer ceramic substrate), LTCC (low temperature co-fired ceramic substrate), substrate made of organic material (such as phenolic resin, epoxy resin, polyimide resin, etc.), substrate made of inorganic material (ceramic base, glass, quartz, etc.), metal substrate (aluminum substrate, copper substrate, etc.), and composite substrate made of different materials. Specifically, in the embodiment, the substrate 120 is a DBC substrate with excellent heat conduction performance.
[0043] The chips 121 are arranged on the substrate 120. Generally, the number and position of the chips 121 can be adjusted according to the actual requirements of the circuit. Specifically, the chips 121 arranged on the substrate 120 are in parallel. In the embodiment, the chips 121 are arranged in parallel on the substrate 120. Generally, the number of the chips 121 can be adjusted according to the current size of the actual circuit. The number of the chips 121 can be set to N, N is a positive integer greater than or equal to 2. Specifically, in the embodiment, 20 chips 121 are arranged in parallel on the substrate 120. Specifically, as shown in Figure 5 , two groups of chips are arranged in the embodiment, each group of chips includes 10 chips in parallel.
[0044] Please continue to refer to Figure 6 , the substrate 120 further includes a wire 122 connected to the electronic components. Generally, the material of the wire 122 can be copper, aluminum, alloy, silver, or other materials. In the embodiment, the wire 122 is an aluminum wire, and different sizes of aluminum wires are used to connect the chips 121 and the substrate 120. Specifically, 12 mil aluminum wires are used to connect the chips 121, and 5 mil aluminum wires are used to connect the chips 121 and the substrate 120.
[0045] Specifically, a thermistor 123 is further arranged in the power module 10 for detecting the temperature inside the package. Generally, the thermistor 123 can be arranged at any position inside the power module 10. Specifically, in the embodiment, the thermistor 123 is arranged inside the plastic package 10 close to one side of the signal terminal 132. The thermistor 123 is in communication connection with the temperature detection terminals T1 and T2, and the temperature detection terminals T1 and T2 detect and output temperature information.
[0046] As shown in Figure 7The diagram shown is a circuit structure diagram corresponding to the power module 10 provided in this embodiment. The power module 10 is formed by the main power positive electrode terminal S1, the main power negative electrode terminal S2, the first control terminal G1, the second control terminal G2, the first signal output terminal D1, the second signal output terminal D2, diodes, switching transistors (MOS transistors), and the electrical connections between them.
[0047] like Figure 8 The diagram shown below illustrates the temperature simulation of the power device under full load current; Table 1 below shows the... Figure 8 Temperature simulation results for the structure shown:
[0048]
[0049] Depend on Figure 8 As shown, the power device 20 includes two sets of chips, each set of chips includes 8 chips connected in parallel, and a total of 16 chips connected in series. As shown in Table 1, under full current conditions, the temperatures of all chips from left to right and top to bottom are as follows: Chip 1: 137.15℃; Chip 2: 137.82℃; Chip 3: 137.81℃; Chip 4: 137.13℃; Chip 5: 137.87℃; Chip 6: 138.62℃; Chip 7: 138.61℃; Chip 8: 137.83℃; Chip 9: 137.89℃; Chip 10: 138.64℃; Chip 11: 138.62℃; Chip 12: 137.84℃; Chip 13: 137.17℃; Chip 14: 137.85℃; Chip 15: 137.83℃; Chip 16: 137.13℃. The highest temperature was recorded by the 10th chip, at 138.64°C. This is significantly lower than the maximum temperature a chip can withstand, which is 175°C (the maximum temperature a typical chip can withstand).
[0050] The power device 20 provided in this embodiment employs a more integrated power module 10, integrating multiple chips 121 onto a single substrate 120. Multiple chips 121 can be connected in parallel within the substrate 120, and the number of chips 121 can be adjusted according to the actual current. This significantly saves installation space, improves the compactness and integration of the entire system, and shortens installation time. Furthermore, integrating the chips onto a single power module 10 effectively eliminates inconsistencies caused by differences in electrical parameters between different chips, improving the reliability and stability of the power module. In addition, the use of a DBC substrate improves heat dissipation efficiency, and the top heat dissipation method and the thermal conductive layer 205 further enhance heat dissipation efficiency.
[0051] The above embodiments only exemplarily illustrate the principles and effects of the present application, and are not used to limit the present application. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes completed by those skilled in the art without departing from the spirit and technical thought disclosed by the present application should be covered by the claims of the present application.
Claims
1. A power device, characterized by, The application relates to a power module. The power module comprises a plastic package and a plurality of groups of chips in the plastic package. The power module further comprises a substrate in the plastic package, the plurality of groups of chips are fixed to the substrate, each group of chips comprises a plurality of chips arranged in parallel, terminals, the terminals comprise main power terminals and signal terminals, the terminals extend from the inside of the plastic package to the outside of the plastic package, one end of the terminals inside the plastic package is connected to the substrate, and the other end of the terminals extending to the outside of the plastic package is used for being fixed to a packaging substrate, and a thermistor is arranged on one side of the plastic package close to the signal terminals and used for detecting the temperature in the packaging body. A heat dissipation device is arranged on the top surface of the power module. The heat dissipation direction of the power module is directed to the heat dissipation device.
2. The power device of claim 1, wherein, A heat conduction layer is arranged between the power module and the heat dissipation device, and the heat dissipation direction of the power device is directed to the heat dissipation device through the heat conduction layer.
3. The power device of claim 1, wherein, The heat dissipation device comprises an air-cooled radiator.
4. The power device of claim 1, wherein, Mounting holes are arranged on two sides of the plastic package away from the terminals, and the number of the mounting holes is greater than or equal to two.
5. The power device of claim 1, wherein, The main power terminals comprise two groups, each group of main power terminals comprises at least two main power terminals, the interval distance between two adjacent main power terminals in each group of main power terminals is greater than or equal to 1 / 3 of the width of the main power terminal and less than or equal to 1 / 2 of the width of the main power terminal.
6. The power device of claim 1, wherein, The part of the main power terminals outside the plastic package is provided with main power terminal mounting holes.
7. The power device of claim 6, wherein, The application further comprises a thermistor, the thermistor is communicated with the signal terminals to detect and output the temperature of the power module.
8. The power device of claim 1, wherein, The signal terminals comprise two groups, each group of signal terminals comprises at least two signal terminals, and the signal terminals and the main power terminals are arranged on the same side of the plastic package.
9. The power device of claim 8, wherein, The signal terminals are distributed on both sides of the main power terminals and / or the signal terminals are distributed on the same side of the main power terminals.