Combined coating system and hot wire process cavity

Abstract

The utility model belongs to the technical field of production and manufacturing of solar cells, and particularly relates to a combined coating system and a hot filament process cavity, which comprise an isolation cavity, a PECVD (Plasma Enhanced Chemical Vapor Deposition) process cavity, a plurality of groups of preheating cavities and a plurality of groups of hot filament process cavities, the preheating cavity and the hot wire process cavity in the same group are connected; the preheating cavity in the next group is connected with the hot wire process cavity in the previous group; the isolation cavity is connected with the last hot filament process cavity, and the isolation cavity is connected with the PECVD process cavity; the isolation cavity is arranged between the PECVD process cavity and the last hot wire process cavity, so that amorphous silicon intrinsic layer coating of a silicon wafer is completed in the hot wire process cavity, microcrystalline silicon doping layer coating is completed in the PECVD process cavity, the cost is saved, the coating quality is ensured, and meanwhile, the overall coating deposition rate is also improved.

Description

TECHNICAL FIELD

[0001] The utility model belongs to solar cell production and manufacturing technical field, especially relate to a combined coating system and hot wire process cavity. BACKGROUND

[0002] With the rapid progress and development of photovoltaic technology level, the conversion efficiency of crystalline silicon solar cell is improved year by year Current photovoltaic industry, the conversion efficiency of monocrystalline silicon solar cell has reached more than 22%. Because HJT (silicon-based heterojunction) solar cell has the advantages of short manufacturing process, low preparation process temperature, high conversion efficiency, high open circuit voltage, low temperature coefficient, no light-induced degradation (LID), no electrical degradation (PID), suitable for using thin silicon wafer to make bendable battery assembly, more power generation, etc., more and more attention is paid.

[0003] The existing heterojunction solar cell preparation process includes (1) texturing cleaning, (2) amorphous silicon deposition, (3) TCO deposition, (4) screen printing electric level. When carrying out amorphous silicon deposition coating, the commonly used equipment is HWCVD (hot wire chemical vapor deposition) equipment and PECVD (plasma chemical vapor deposition) equipment. But the PECVD equipment is expensive, and the coating deposition rate is low, while the HWCVD has high coating deposition rate and low cost, but the microcrystalline silicon doped layer coating effect is not ideal, and the microcrystalline silicon doped layer coating thickness is uneven.

[0004] Therefore, in order to avoid the technical problem of the microcrystalline silicon doped layer coating effect being not ideal, a combined coating system and hot wire process cavity need to be designed.

[0005] It should be noted that the above information disclosed in the background section is only used to understand the background of the present application, and therefore, the above description is not considered to constitute prior art information. INVENTION CONTENTS

[0006] The present disclosure provides at least a combined coating system and hot wire process cavity.

[0007] In a first aspect, the present disclosure provides a combined coating system, comprising:

[0008] An isolation cavity, a PECVD process cavity, and a plurality of groups of preheating cavities and hot wire process cavities;

[0009] The preheating cavities and the hot wire process cavities in the same group are connected;

[0010] The preheating cavities in the next group are connected to the hot wire process cavities in the previous group;

[0011] The isolation cavity is connected to the last hot wire process cavity, and the isolation cavity is connected to the PECVD process cavity.

[0012] The isolation chamber is arranged between the PECVD process chamber and the last hot-wire process chamber.

[0013] The silicon wafer is first coated with amorphous silicon intrinsic layer in the hot-wire process chamber, and then coated with microcrystalline silicon doped layer in the PECVD process chamber.

[0014] In an alternative embodiment, the hot-wire process chamber comprises a first chamber and a first upper cover arranged on top of the first chamber.

[0015] A fixing plate is arranged on the bottom surface of the first upper cover, and a hot-wire mechanism is arranged on the bottom surface of the fixing plate, wherein the fixing member of the hot-wire mechanism is connected with the fixing plate.

[0016] The hot-wire fixing assemblies in the hot-wire mechanism are connected in series and arranged in a continuous S shape.

[0017] The hot-wire mechanism is adapted to heat the first chamber.

[0018] A pipeline assembly is arranged on the first upper cover (12) to introduce required gas into the first chamber, and a cooling assembly is arranged on the first upper cover (12).

[0019] In an alternative embodiment, the hot-wire mechanism comprises a plurality of hot-wire fixing assemblies connected in series.

[0020] The hot-wire fixing assembly comprises a hot-wire conductive block and an insulating block.

[0021] Two hot-wire fixing holes are formed on the bottom surface of the hot-wire conductive block.

[0022] One end of the hot wire is fixed in one of the hot-wire fixing holes of one hot-wire conductive block, and the other end of the hot wire is fixed in one of the hot-wire fixing holes of another hot-wire conductive block, so that the two hot-wire conductive blocks are connected in series.

[0023] In all the hot-wire conductive blocks connected in series, the lengths of the hot wires connected between adjacent hot-wire conductive blocks are the same.

[0024] The insulating block is hollow.

[0025] Part of the hot-wire conductive block is located in the hollow part of the insulating block, and the bottom of the hot-wire conductive block extends from the bottom of the insulating block.

[0026] An insulating pad is arranged on the top surface of the hot-wire conductive block, and the insulating pad is arranged in the hollow part of the insulating block.

[0027] The fixing member is partially located in the hollow portion of the insulating block and partially extends from the top surface of the insulating block, and the portion of the fixing member extending from the insulating block is connected with the fixing plate;

[0028] A ring groove is formed on the outer wall of the hot-wire conductive block, and a spring contact finger is arranged in the ring groove;

[0029] The spring contact finger is arranged in the insulating block;

[0030] A fastener is arranged on the portion of the hot-wire conductive block extending from the insulating block;

[0031] The fastener is arranged radially along the hot-wire conductive block;

[0032] The fastener is configured to fix the hot wire in the hot-wire fixing hole.

[0033] In an optional embodiment, the isolation chamber comprises an isolation chamber;

[0034] An upper cooling plate and a lower cooling plate are arranged in the isolation chamber;

[0035] The upper cooling plate is arranged above the lower cooling plate, and a wafer-carrying plate is located between the upper cooling plate and the lower cooling plate after entering the isolation chamber.

[0036] In an optional embodiment, the PECVD process chamber comprises a third upper cover, a third chamber, a first process gas inlet, a first process cleaning gas inlet, a uniform gas chamber, and a spray plate;

[0037] The third upper cover is arranged on the top of the third chamber;

[0038] The third upper cover is provided with a uniform gas chamber;

[0039] The bottom of the third upper cover is provided with a spray plate, and the spray plate is configured to spray the gas in the uniform gas chamber downward;

[0040] The third upper cover is provided with a first process gas inlet and a first process cleaning gas inlet;

[0041] The first process gas inlet and the first process cleaning gas inlet are in communication with the uniform gas chamber;

[0042] After entering the third chamber, a wafer-carrying plate is located below the spray plate.

[0043] In an optional embodiment, the PECVD process chamber is connected with a wafer-out chamber, and the PECVD process chamber is arranged between the wafer-out chamber and the isolation chamber;

[0044] The first preheating chamber is connected with the sheet feeding chamber, and is arranged between the sheet feeding chamber and the first hot wire process chamber;

[0045] The sheet feeding chamber is provided with a vacuum door valve between the sheet feeding chamber and the corresponding preheating chamber, and the sheet feeding chamber is further connected with an atmospheric door valve;

[0046] The sheet feeding chamber is provided with a vacuum door valve between the sheet feeding chamber and the corresponding preheating chamber, and the sheet feeding chamber is further connected with an atmospheric door valve;

[0047] In an optional embodiment, the sheet feeding chamber and the sheet discharging chamber are of the same structure, and each comprises a second upper cover, a second chamber and a support;

[0048] The second chamber is arranged on the support;

[0049] The second upper cover is arranged on the top of the second chamber;

[0050] The carrier plate is conveyed into the second chamber.

[0051] In an optional embodiment, the preheating chamber comprises a preheating chamber;

[0052] A plurality of infrared lamp tubes are arranged in the preheating chamber, and the wiring ends of the infrared lamp tubes extend from the sidewall of the preheating chamber;

[0053] The infrared lamp tubes are arranged below the carrier plate conveyed in the preheating chamber;

[0054] The infrared lamp tubes are equidistantly arranged along the conveying direction of the carrier plate.

[0055] In an optional embodiment, the preheating chamber comprises a preheating chamber;

[0056] A corresponding conveying part is arranged in the preheating chamber to convey the carrier plate conveyed into the preheating chamber;

[0057] A heating aluminum plate is arranged in the preheating chamber, and the heating aluminum plate is arranged below the carrier plate in the preheating chamber.

[0058] In a second aspect, the embodiments of the present disclosure further provide a hot wire process chamber used in the above-mentioned combined coating system, and the hot wire process chamber is provided with a hot wire mechanism;

[0059] The hot wire fixed assemblies in the hot wire mechanism are connected in series and arranged in a continuous S shape, and the lengths of the hot wires connected between adjacent hot wire fixed assemblies are the same.

[0060] The utility model discloses a beneficial effect is, the combination formula coating system of this, include: the isolation chamber, PECVD process chamber and a plurality of groups of preheating chamber and hot wire process chamber, the preheating chamber and hot wire process chamber of same group are connected, the preheating chamber of next group connects the hot wire process chamber of last group, the isolation chamber connects last hot wire process chamber, and the isolation chamber with PECVD process chamber is connected, the isolation chamber sets up between PECVD process chamber and last hot wire process chamber, and then realizes the silicon wafer in hot wire process chamber completes amorphous silicon intrinsic layer coating, completes microcrystalline silicon doped layer coating in PECVD process chamber, guarantees the quality of microcrystalline silicon doped layer coating.

[0061] The other features and advantages of the present application will be further clarified by the following description and become apparent with reference to the drawings in which:

[0062] In order to make the above objectives, features and advantages of the present application more obvious and easy to understand, the preferred embodiments are described in detail below, and the accompanying drawings are described as follows. BRIEF DESCRIPTION OF DRAWINGS

[0063] In order to more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings needed to be used in the specific embodiments or prior art description. Obviously, the drawings described below are some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor on the basis of these drawings.

[0064] Figure 1 A schematic diagram of a combined coating system provided by the embodiments of the present disclosure is shown in the following figure:

[0065] Figure 2 A sectional view of an isolation chamber provided by the embodiments of the present disclosure is shown in the following figure:

[0066] Figure 3 A structural schematic diagram of a PECVD process chamber provided by the embodiments of the present disclosure is shown in the following figure:

[0067] Figure 4 A sectional view of a PECVD process chamber provided by the embodiments of the present disclosure is shown in the following figure:

[0068] Figure 5 A structural schematic diagram of a film feeding chamber provided by the embodiments of the present disclosure is shown in the following figure:

[0069] Figure 6 A structural schematic diagram of a preheating chamber provided by the embodiments of the present disclosure is shown in the following figure

[0070] Figure 7 A schematic diagram of an infrared lamp heating structure provided for an embodiment of the present disclosure;

[0071] Figure 8 A schematic diagram of a magnetic fluid delivery device provided for an embodiment of the present disclosure;

[0072] Figure 9 A schematic diagram of an aluminum plate heating structure provided for an embodiment of the present disclosure;

[0073] Figure 10 A schematic diagram of a hot wire process cavity provided for an embodiment of the present disclosure;

[0074] Figure 11 A schematic diagram of a hot wire mechanism provided for an embodiment of the present disclosure;

[0075] Figure 12 A sectional view of a first upper cover provided for an embodiment of the present disclosure;

[0076] Figure 13 A schematic diagram of a hot wire fixing assembly provided for an embodiment of the present disclosure;

[0077] Figure 14 A sectional view of a hot wire fixing assembly provided for an embodiment of the present disclosure;

[0078] Figure 15 A schematic diagram of a carrier plate provided for an embodiment of the present disclosure.

[0079] In the drawings:

[0080] 1 hot wire process cavity, 11 hot wire mechanism, 111 hot wire fixing assembly, 1111 hot wire conductive block, 1112 hot wire fixing hole, 1113 insulating block, 1114 insulating pad block, 1115 fixing member, 1116 ring groove, 1117 spring contact finger, 1118 fastener, 1119 hot wire;

[0081] 12 first upper cover, 121 fixing plate, 13 process gas inlet, 131 first pipeline, 14 cleaning gas inlet, 141 second pipeline, 15 cooling water outlet, 151 cooling water inlet, 152 third pipeline, 16 hot wire wiring end;

[0082] 2 PECVD process cavity, 21 third upper cover, 22 third cavity, 23 first process gas inlet, 24 first process cleaning gas inlet, 25 uniform gas cavity, 26 shower plate, 27 uniform gas hole, 28 turnover assembly, 29 heating plate;

[0083] 3 isolation cavity, 31 isolation cavity, 32 upper cooling plate, 33 lower cooling plate;

[0084] 4 carrier plate, 41 silicon wafer.

[0085] 5 sheet feeding cavity, 51 second upper cover, 52 second cavity, 53 support;

[0086] 6 sheet discharging cavity;

[0087] 7 preheating cavity, 71 preheating chamber, 72 infrared lamp tube, 73 terminal, 74 magnetic fluid conveying device, 75 bearing wheel, 76 heating aluminum plate, 77 driving motor, 78 synchronous belt;

[0088] 8 vacuum door valve, 81 atmospheric door valve; DETAILED DESCRIPTION

[0089] To make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme of the present application will be described below in connection with the drawings. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of protection of the present application.

[0090] As used herein, the phrases "in an embodiment", "according to an embodiment", "in some embodiments", and the like generally mean the fact that a particular feature, structure, or characteristic described after the phrase can be included in at least one embodiment of the present disclosure. Therefore, the particular feature, structure, or characteristic can be included in more than one embodiment of the present disclosure, so that these phrases do not necessarily refer to the same embodiment. As used herein, the terms "example", "exemplary", and the like are used as an example, instance, or illustration. Any implementation, aspect, or design described herein as "example" or "exemplary" is not necessarily interpreted as preferred or superior to other implementations, aspects, or designs. On the contrary, the use of the terms "example", "exemplary", and the like is intended to present the concept in a specific manner.

[0091] Some embodiments of the present application will be described in detail below in connection with the drawings. In the case of no conflict, the following embodiments and features in the embodiments can be combined with each other.

[0092] As Figure 1As shown, at least one disclosed embodiment provides a combined coating system, which includes: an isolation chamber 3, a PECVD process chamber 2, and a plurality of groups of preheating chambers 7 and hot wire process chambers 1; the preheating chamber 7 and the hot wire process chamber 1 in the same group are connected; the preheating chamber 7 in the next group is connected to the hot wire process chamber 1 in the previous group; the isolation chamber 3 is connected to the last hot wire process chamber 1, and the isolation chamber 3 is connected to the PECVD process chamber 2; the isolation chamber 3 is arranged between the PECVD process chamber 2 and the last hot wire process chamber 1, thereby realizing that the silicon wafer 41 completes the amorphous silicon intrinsic layer coating in the hot wire process chamber 1, completes the microcrystalline silicon doped layer coating in the PECVD process chamber 2, saves cost, guarantees the coating quality, and improves the overall coating deposition rate; separately performing the microcrystalline silicon doped layer coating in the PECVD process chamber 2 can guarantee that the microcrystalline silicon doped layer coating thickness meets the demand and is uniform.

[0093] As shown in the Figure 2 optional implementation, the isolation chamber 3 includes: an isolation chamber 31; the isolation chamber 31 is provided with an upper cooling plate 32 and a lower cooling plate 33; the upper cooling plate 32 is arranged above the lower cooling plate 33, and the carrier plate 4 carrying the silicon wafer 41 is located between the upper cooling plate 32 and the lower cooling plate 33 after entering the isolation chamber 31.

[0094] The upper cooling plate 32 and the lower cooling plate 33 can quickly cool the silicon wafer 41 after coating from the hot wire process chamber 1; the hot wire 1119 CVD coating requires 1500-1800°C, and the PECVD coating only requires about 200°C.

[0095] As shown in the Figure 3 and Figure 4 optional implementation, the PECVD process chamber 2 includes: a third upper cover 21, a third chamber 22, a first process gas inlet 23, a first process cleaning gas inlet 24, a uniform gas chamber 25, and a shower plate 26; the third upper cover 21 is arranged on the top of the third chamber 22; the third upper cover 21 is provided with the uniform gas chamber 25; the bottom of the third upper cover 21 is provided with the shower plate 26, which is configured to spray the gas in the uniform gas chamber 25 downward; the third upper cover 21 is provided with the first process gas inlet 23 and the first process cleaning gas inlet 24; the first process gas inlet 23 and the first process cleaning gas inlet 24 are in communication with the uniform gas chamber 25; the carrier plate 4 carrying the silicon wafer 41 is located below the shower plate 26 after entering the third chamber 22.

[0096] In this embodiment, the third upper cover 21 can be provided with a turnover assembly 28, which can drive the third upper cover 21 to turn over; the turnover assembly 28 can adopt an existing assembly tool.

[0097] like Figure 4 As shown, in this embodiment, a heating plate 29 can be installed in the gas equalization chamber 25. The heating plate 29 has gas equalization holes 27. The gas can be uniformly heated and then enter the gas equalization chamber 25 between the heating plate 29 and the spray plate 26. The heating plate 29 is located above the spray plate 26. The first process air inlet 23 and the first process cleaning air inlet 24 are connected to the gas equalization chamber 25 above the heating plate 29. The heating plate 29 can heat the process gas entering the gas equalization chamber 25.

[0098] In this embodiment, a plurality of air-uniforming holes 27 are also provided on the spray plate 26, so that gas can enter the spray plate 26 evenly and then be sprayed out.

[0099] In this embodiment, each cavity is provided with the same or different transmission parts. The same transmission part can be composed of a magnetohydrodynamic transport device 74, a bearing wheel 75, a drive motor 77 and a synchronous belt 78. Under the action of the bearing wheel 75, it runs between the chambers and completes the amorphous silicon intrinsic layer coating in the hot wire process chamber 1 and the microcrystalline silicon doped layer coating in the PECVD process chamber 2.

[0100] In this embodiment, the infeed cavity 5 and the outfeed cavity 6 have the same structure; the preheating cavity 7, the hot wire process cavity 1, the isolation cavity 3, the PECVD process cavity 2, the infeed cavity 5 and the outfeed cavity 6 each include a corresponding top cover, chamber, transfer section and support 53; each chamber can have an inlet and outlet for the carrier plate 4 to enter and exit on its side wall.

[0101] In one optional embodiment, the PECVD process chamber 2 is connected to the wafer exit chamber 6, and the PECVD process chamber 2 is disposed between the wafer exit chamber 6 and the isolation chamber 3; the first preheating chamber 7 is connected to the wafer inlet chamber 5, and the first preheating chamber 7 is disposed between the wafer inlet chamber 5 and the first hot wire process chamber 1; a vacuum valve 8 is disposed between the wafer inlet chamber 5 and the corresponding preheating chamber 7, and the wafer inlet chamber 5 is also connected to an atmospheric valve 81; a vacuum valve 8 is disposed between the wafer exit chamber 6 and the PECVD process chamber 2, and the wafer exit chamber 6 is also connected to an atmospheric valve 81.

[0102] The atmospheric valve 81 and the vacuum valve 8 are set to optimize the coating cycle and ensure that the vacuum environment of the preheating chamber 7, the isolation chamber 3, the hot wire process chamber 1, and the PECVD process chamber 2 is not affected by the wafer entry and exit. After the wafer entry and exit, only the wafer entry chamber 5 and the wafer exit chamber 6 need to be evacuated.

[0103] like Figure 5As shown in one optional embodiment, the film inlet cavity 5 and the film outlet cavity 6 have the same structure, both including: a second upper cover 51, a second chamber 52 and a support 53; the second chamber 52 is disposed on the support 53; the second upper cover 51 is disposed on the top of the second chamber 52; the carrier plate 4 is conveyed into the second chamber 52.

[0104] like Figure 6 and Figure 7 As shown, in an optional embodiment, the preheating chamber 7 includes: a preheating chamber 71; a corresponding second cover 51 is provided on the top of the preheating chamber 71; a plurality of infrared lamps 72 are inserted into the preheating chamber 71, and the wiring terminals 73 of the infrared lamps 72 extend from the side wall of the preheating chamber 71; a corresponding transmission section is provided in the preheating chamber 71 to transport the carrier plate 4 that is conveyed into the preheating chamber 71; the infrared lamps 72 are located below the carrier plate 4 being conveyed in the preheating chamber 71; the infrared lamps 72 are equidistantly arranged along the conveying direction of the carrier plate 4.

[0105] In this embodiment, the infrared lamp 72 is connected to the power supply via terminal 73.

[0106] A pair of opposite sidewall openings are made in the preheating chamber 71 to allow infrared lamps 72 to pass through. The openings are located below the magnetohydrodynamic transport device 74 on the sidewall, so that the infrared lamps 72 preheat the silicon wafer 41 from below the carrier plate 4.

[0107] like Figure 8 and Figure 9 As shown, in one optional embodiment, the preheating chamber 7 includes: a preheating chamber 71; a corresponding second cover 51 is provided on the top of the preheating chamber 71; a plurality of magnetic fluid conveying devices 74 are provided on the outer wall of the preheating chamber 71; one end of the magnetic fluid conveying device 74 extends into the interior of the preheating chamber 71, and a bearing wheel 75 is provided on the part of the magnetic fluid conveying device 74 extending into the preheating chamber 71; the top of the bearing wheel 75 supports a carrier plate 4; a heating aluminum plate 76 is provided inside the preheating chamber 71, and the heating aluminum plate 76 is located below the carrier plate 4 in the preheating chamber 71; a drive motor 77 is provided on the outer wall of the preheating chamber 71, and the drive motor 77 is connected to all the magnetic fluid conveying devices 74 through a synchronous belt 78; preheating is performed by heating the aluminum plate 76.

[0108] In order to ensure uniform thickness of the microcrystalline silicon doped layer, the amorphous silicon intrinsic layer deposition performed in the hot wire process cavity 1 also needs to ensure uniform thickness. Therefore, a hot wire mechanism 11 needs to be set in the hot wire process cavity 1 to ensure uniformity of the amorphous silicon intrinsic layer deposition.

[0109] like Figure 10As shown in the optional embodiment, the hot wire process cavity 1 comprises: a first cavity, and a first upper cover 12 arranged on the top of the first cavity; a fixing plate 121 is arranged on the bottom surface of the first upper cover 12, and the bottom surface of the fixing plate 121 is provided with a hot wire mechanism 11, and the fixing part 1115 in the hot wire mechanism 11 is connected with the fixing plate 121; the hot wire fixing assemblies 111 in the hot wire mechanism 11 are connected in series and arranged in a continuous S shape; and the hot wire mechanism 11 is suitable for heating in the first cavity.

[0110] As shown in the optional embodiment, the hot wire fixing assemblies 111 connected in series can be better and uniformly arranged, so that the hot wires 1119 are uniformly arranged; and the continuous S-shaped arrangement can meet the requirement of uniform arrangement of the hot wires 1119. Figure 11

[0111] In the embodiment, the first upper cover 12 is provided with a pipeline assembly to introduce the required gas into the first cavity, and the first upper cover 12 is provided with a cooling assembly.

[0112] As shown in the optional embodiment, the pipeline assembly can be that the first upper cover 12 is provided with a process gas inlet 13 and a cleaning gas inlet 14; the process gas inlet 13 is connected with a first pipeline 131, the first pipeline 131 is communicated with the inside of the first cavity, and the process gas is facilitated to enter the first cavity. Figure 10

[0113] Specifically, the cleaning gas inlet 14 is connected with a second pipeline 141, and the second pipeline 141 is communicated with the inside of the first cavity, so that the cleaning gas is facilitated to enter the first cavity.

[0114] The first pipeline 131 and the second pipeline 141 are arranged on the first upper cover 12.

[0115] Specifically, the cooling assembly can be that the first upper cover 12 is provided with a cooling water outlet 15 and a cooling water inlet 151; the cooling water outlet 15 and the cooling water inlet 151 are connected through a third pipeline 152; the third pipeline 152 is arranged on the first upper cover 12; the cooling water is circulated in the third pipeline 152 through the cooling water outlet 15 and the cooling water inlet 151, and the cooling water can cool the first upper cover 12 to prevent the first upper cover 12 from being damaged by the high temperature of the hot wires 1119.

[0116] As shown in the optional embodiment, the first upper cover 12 can be provided with a plurality of hot wire connection terminals 16, the hot wire connection terminals 16 are connected with the hot wire conductive blocks 1111 in the corresponding hot wire fixing assemblies 111, the hot wires 1119 are powered through the hot wire connection terminals 16 connected with the power supply, so that the hot wires 1119 can be heated. Figure 12 As shown in the optional embodiment, the hot wire fixing assemblies 111 connected in series can be better and uniformly arranged, so that the hot wires 1119 are uniformly arranged; and the continuous S-shaped arrangement can meet the requirement of uniform arrangement of the hot wires 1119.​​

[0117] As shown in Figure 13 and Figure 14 In an alternative embodiment, the hot wire mechanism 11 comprises a plurality of hot wire fixing assemblies 111 connected in series. The hot wire fixing assembly 111 comprises a hot wire conducting block 1111. Two hot wire fixing holes 1112 are formed on the bottom surface of the hot wire conducting block 1111. One end of a hot wire 1119 is fixed in one of the hot wire fixing holes 1112 of one hot wire conducting block 1111, and the other end of the hot wire 1119 is fixed in one of the hot wire fixing holes 1112 of another hot wire conducting block 1111, so that the two hot wire conducting blocks 1111 are connected in series. In all the hot wire conducting blocks 1111 connected in series, the lengths of the hot wires 1119 connected between adjacent hot wire conducting blocks 1111 are the same, thereby achieving uniform distribution of the hot wire conducting blocks 1111. The hot wires 1119 are arranged more uniformly due to the series connection of the hot wire conducting blocks 1111. The lengths of the hot wires 1119 between adjacent hot wire conducting blocks 1111 are the same, so that the temperature field formed is more uniform. When the process gas passes through the temperature field, it can be fully pyrolyzed, thereby improving the quality of the film (amorphous silicon intrinsic layer film) and the uniformity of the film.

[0118] The hot wire fixing assemblies 111 connected in series can be better and more uniformly arranged, so that the hot wires 1119 between adjacent hot wire fixing assemblies 111 can also be uniformly arranged, and the temperature field formed is more uniform.

[0119] Alternatively, the hot wires 1119 can be relatively short, so that the distance between adjacent hot wire fixing assemblies 111 is reduced, and the arrangement of the hot wire fixing assemblies 111 and the hot wires 1119 is more compact, thereby further making the temperature field more uniform.

[0120] Alternatively, the relatively short hot wires 1119 can be in a U shape, thereby avoiding the sagging of the hot wires 1119.

[0121] As shown in Figure 14 In an alternative embodiment, the hot wire fixing assembly 111 further comprises an insulating block 1113. The insulating block 1113 is hollow. The insulating block 1113 is sleeved on the hot wire conducting block 1111, and the bottom of the hot wire conducting block 1111 protrudes from the bottom of the insulating block 1113. An insulating pad 1114 is arranged on the top surface of the hot wire conducting block 1111 and is arranged in the insulating block 1113. A fixing member 1115 is arranged on the top surface of the insulating pad 1114. Part of the fixing member 1115 is located in the insulating block 1113, and part protrudes from the top surface of the insulating block 1113.

[0122] Preferably, the insulating block 1113 can insulate the hot wire conducting block 1111 from discharging externally.

[0123] The insulating pad 1114 can isolate the hot wire conductive block 1111 from the fixing member 1115, preventing the fixing member 1115 from discharging to the first upper cover 12.

[0124] The fastener 1115 can be connected to the first top cover 12 to secure the insulating block 1113.

[0125] In one optional embodiment, an annular groove 1116 is formed on the outer wall of the hot wire conductive block 1111, and a spring contact finger 1117 is disposed in the annular groove 1116; the spring contact finger 1117 is disposed in the insulating block 1113; a fastener 1118 is disposed on the portion of the hot wire conductive block 1111 that extends out of the insulating block 1113; the fastener 1118 is disposed radially along the hot wire conductive block 1111; the fastener 1118 is configured to fix the hot wire 1119 in the hot wire fixing hole 1112.

[0126] Spring contact finger 1117 is used to stabilize the conduction current.

[0127] A fastener 1118 can simultaneously fasten the hot wires 1119 in two hot wire fixing holes 1112; half of the fastener 1118 is located in one of the hot wire fixing holes 1112 and the other half is located in the other hot wire fixing hole 1112.

[0128] In this embodiment, the insulating block 1113 may be made of ceramic or a rigid insulating material.

[0129] In this embodiment, the fixing member 1115 can be a fixing screw, which facilitates the assembly and disassembly of the hot wire fixing assembly 111.

[0130] In this embodiment, the fastener 1118 can be a fastening screw, which facilitates the installation and removal of the hot wire 1119.

[0131] The power supply connected to the terminals 73 of the drive motor 77 and the infrared lamp tube 72 and the terminal 16 of the hot wire can all be electrically connected to the control module and controlled by the control module.

[0132] like Figure 15 As shown, the top surface of the carrier plate 4 is grid-like, which can hold multiple silicon wafers 41.

[0133] At least one other disclosed embodiment also provides a hot wire process cavity 1 used in the above-described combined coating system, wherein a hot wire mechanism 11 is disposed in the hot wire process cavity 1; the hot wire fixing components 111 in the hot wire mechanism 11 are connected in series and arranged in a continuous S-shape, and the hot wires 1119 connected between adjacent hot wire fixing components 111 have the same length.

[0134] In summary, the combined coating system comprises: an isolation chamber 3, a PECVD process chamber 2, and a plurality of groups of preheating chambers 7 and hot wire process chambers 1; the preheating chambers 7 and the hot wire process chambers 1 in the same group are connected; the preheating chamber 7 in the next group is connected to the hot wire process chamber 1 in the previous group; the isolation chamber 3 is connected to the last hot wire process chamber 1, and the isolation chamber 3 is connected to the PECVD process chamber 2; the isolation chamber 3 is arranged between the PECVD process chamber 2 and the last hot wire process chamber 1, so that the silicon wafer 41 completes the amorphous silicon intrinsic layer coating in the hot wire process chamber 1, and completes the microcrystalline silicon doped layer coating in the PECVD process chamber 2, thereby saving cost, ensuring coating quality, and improving the overall coating deposition rate.

[0135] In the description of the embodiments of the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting" should be understood in a broad sense, for example, can be fixedly connected, can be detachably connected, or integrally connected; can be mechanically connected, can be electrically connected; can be directly connected, can be indirectly connected through an intermediate medium, and can be the communication inside two elements. For ordinary skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0136] In the description of the present application, it should be explained that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, therefore it cannot be understood as a limitation on the present application. In addition, terms such as "first", "second" and other numerical terms are used in this paper, unless otherwise indicated in this paper. Therefore, the first element, component, area, layer or section discussed above can be referred to as the second element, component, area, layer or section without departing from the teachings of the example embodiments.

[0137] Spatially relative terms, such as "inner," "outer," "beneath," "below," "lower," "above," "upper," and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. Spatially relative terms can be intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the example term "below" can encompass both an orientation of above and below. The device can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0138] With the above-described ideal embodiments according to the present application as the inspiration, through the above description, relevant staff can certainly make various changes and modifications within the scope of not deviating from the technical thought of the present application. The technical scope of the present application is not limited to the content in the specification, and must be determined according to the scope of claims.

Claims

1. A combined coating system, characterized in that The combination film coating system comprises an isolation chamber (3), a PECVD process chamber (2), and a plurality of groups of preheating chambers (7) and hot wire process chambers (1); The preheating chambers (7) and the hot wire process chambers (1) in the same group are connected; The preheating chamber (7) in the next group is connected to the hot wire process chamber (1) in the previous group; The isolation chamber (3) is connected to the last hot wire process chamber (1), and the isolation chamber (3) is connected to the PECVD process chamber (2); The isolation chamber (3) is arranged between the PECVD process chamber (2) and the last hot wire process chamber (1); The silicon wafer is first coated with an amorphous silicon intrinsic layer in the hot wire process chamber (1), and then coated with a microcrystalline silicon doped layer in the PECVD process chamber (2).

2. The combination film coating system according to claim 1, wherein: The hot wire process chamber (1) comprises a first chamber and a first upper cover (12) arranged on the top of the first chamber; A fixing plate (121) is arranged on the bottom surface of the first upper cover (12), and a hot wire mechanism (11) is arranged on the bottom surface of the fixing plate (121), wherein a fixing member (1115) in the hot wire mechanism (11) is connected to the fixing plate (121); The hot wire fixing assemblies (111) in the hot wire mechanism (11) are connected in series and arranged in a continuous S shape; The hot wire mechanism (11) is suitable for heating the first chamber; A pipeline assembly is arranged on the first upper cover (12) to introduce the required gas into the first chamber, and a cooling assembly is arranged on the first upper cover (12).

3. The combination film coating system according to claim 2, wherein: The hot wire mechanism (11) comprises a plurality of hot wire fixing assemblies (111) connected in series; The hot wire fixing assembly (111) comprises a hot wire conductive block (1111) and an insulating block (1113); Two hot wire fixing holes (1112) are formed in the bottom surface of the hot wire conductive block (1111); One end of a hot wire (1119) is fixed in one of the hot wire fixing holes (1112) of one hot wire conductive block (1111), and the other end of the hot wire (1119) is fixed in one of the hot wire fixing holes (1112) of another hot wire conductive block (1111), so that the two hot wire conductive blocks (1111) are connected in series; The lengths of the hot wires (1119) connected between adjacent hot wire conductive blocks (1111) in all the hot wire conductive blocks (1111) connected in series are the same; The insulating block (1113) is hollow; Part of the hot wire conductive block (1111) is located in the hollow part of the insulating block (1113), and the bottom part of the hot wire conductive block (1111) extends from the bottom part of the insulating block (1113); An insulating pad (1114) is arranged on the top surface of the hot wire conductive block (1111) and located in the hollow part of the insulating block (1113); ​ The top surface of the insulating pad (1114) is provided with a fixing part (1115), part of the fixing part (1115) is located in the hollow part of the insulating block (1113), and part of the fixing part (1115) extends from the top surface of the insulating block (1113), the part of the fixing part (1115) extending from the insulating block (1113) is connected with the fixing plate (121); An annular groove (1116) is formed in the outer wall of the hot-wire conductive block (1111), and a spring contact finger (1117) is arranged in the annular groove (1116); The spring contact finger (1117) is arranged in the insulating block (1113); A fastener (1118) is arranged on the part of the hot-wire conductive block (1111) extending from the insulating block (1113); The fastener (1118) is arranged along the radial direction of the hot-wire conductive block (1111); The fastener (1118) is configured to fix the hot wire (1119) in the hot-wire fixing hole (1112).

4. The combined coating system of claim 1, wherein: The isolation chamber (3) comprises an isolation chamber (31); The isolation chamber (31) is provided with an upper cooling plate (32) and a lower cooling plate (33); The upper cooling plate (32) is arranged above the lower cooling plate (33), and the carrier plate (4) carrying the silicon wafer (41) is located between the upper cooling plate (32) and the lower cooling plate (33) after entering the isolation chamber (31).

5. The combined coating system of claim 4, wherein: The PECVD process chamber (2) comprises a third upper cover (21), a third chamber (22), a first process gas inlet (23) (13), a first process cleaning gas inlet (24), a uniform gas chamber (25), and a shower plate (26); The third upper cover (21) is arranged at the top of the third chamber (22); The third upper cover (21) is provided with a uniform gas chamber (25); The bottom of the third upper cover (21) is provided with a shower plate (26), and the shower plate (26) is configured to spray the gas in the uniform gas chamber (25) downward; The third upper cover (21) is provided with a first process gas inlet (23) (13) and a first process cleaning gas inlet (24); The first process gas inlet (23) (13) and the first process cleaning gas inlet (24) are in communication with the uniform gas chamber (25); The carrier plate (4) carrying the silicon wafer (41) is located below the shower plate (26) after entering the third chamber (22).

6. The combined coating system of claim 5, wherein: The PECVD process chamber (2) is connected with the wafer outlet chamber (6), and the PECVD process chamber (2) is arranged between the wafer outlet chamber (6) and the isolation chamber (3); The first preheating chamber (7) is connected with the wafer inlet chamber (5), and the first preheating chamber (7) is arranged between the wafer inlet chamber (5) and the first hot-wire process chamber (1); A vacuum door valve (8) is arranged between the wafer inlet chamber (5) and the corresponding preheating chamber (7), and the wafer inlet chamber (5) is further connected with an atmospheric door valve (81). The sheet outlet cavity (6) is provided with a vacuum door valve (8) between the PECVD process cavity (2), and the sheet outlet cavity (6) is further connected with an atmospheric door valve (81).

7. The combined coating system according to claim 6, characterized in that: The sheet inlet cavity (5) and the sheet outlet cavity (6) are the same structure, and each comprises a second upper cover (51), a second cavity (52) and a support (53); The second cavity (52) is arranged on the support (53); The second upper cover (51) is arranged on the top of the second cavity (52); The carrier plate (4) is transported into the second cavity (52).

8. The combined coating system according to claim 1, characterized in that: The preheating cavity (7) comprises a preheating cavity (71); A plurality of infrared lamp tubes (72) are arranged in the preheating cavity (71), and the wiring ends (73) of the infrared lamp tubes (72) extend from the side wall of the preheating cavity (71); The infrared lamp tubes (72) are located below the carrier plate (4) transported in the preheating cavity (71); The infrared lamp tubes (72) are equidistantly arranged along the conveying direction of the carrier plate (4).

9. The combined coating system according to claim 1, characterized in that: The preheating cavity (7) comprises a preheating cavity (71); A corresponding transmission part is arranged in the preheating cavity (71) to convey the carrier plate (4) transported into the preheating cavity (71); A heating aluminum plate (76) is arranged in the preheating cavity (71) below the carrier plate (4).

10. A hot wire process cavity used in the combined coating system according to claim 1, characterized in that, The hot wire process cavity (1) is provided with a hot wire mechanism (11); The hot wire fixing assemblies (111) in the hot wire mechanism (11) are connected in series and arranged in a continuous S shape, and the lengths of the hot wires (1119) connected between adjacent hot wire fixing assemblies (111) are the same.

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