Radio frequency front-end module and electronic equipment

Abstract

The utility model relates to the technical field of radio frequency devices, and discloses a radio frequency front-end module and electronic equipment, and the radio frequency front-end module comprises a substrate, the surface of which is provided with a first bonding pad used for grounding; the power amplification chip is arranged on the substrate, and a first amplification transistor, a second amplification transistor and a capacitance network connected with the output end of the first amplification transistor and the output end of the second amplification transistor are arranged in the power amplification chip; and the connecting piece is an inductive element, is connected to the capacitor network and the first bonding pad, and is used for being matched with the capacitor network to adjust the impedance of the power amplification chip. According to the radio frequency front-end module, the connecting piece with inductive parasitism is used for replacing a matching inductor between a capacitor network in the power amplification chip and the ground, parameters of the connecting piece can be flexibly adjusted, the harmonic impedance of the power amplification chip can meet indexes, the size of the power amplification chip is effectively reduced, and element arrangement of the radio frequency front-end module is optimized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of radio frequency devices, and particularly relates to a radio frequency front-end module and an electronic device. BACKGROUND

[0002] The radio frequency front-end module is an important device of a communication device. In the related art, in order to realize miniaturization of the radio frequency front-end module, a capacitor device and an inductor device are integrated in a power amplification chip of the radio frequency front-end module. In order to make harmonic impedance of the power amplification chip meet an index, there is a very fine requirement for inductance of an inductor element in designing the power amplification chip. In the actual measurement process after the chip design is completed, it is often found that the inductance of the inductor element is not the best value.

[0003] However, the inductor element integrated in the power amplification chip cannot be easily adjusted in inductance after the chip design is completed, so that the harmonic impedance of the power amplification chip is often difficult to meet the index, and finally the overall performance of the radio frequency front-end module is affected. CONTENT OF THE UTILITY MODEL

[0004] Embodiments of the present application provide a radio frequency front-end module and an electronic device, aiming to more easily configure a corresponding inductance for a power amplification chip when packaging the radio frequency front-end module, so as to make harmonic impedance meet an index, and optimize arrangement and setting of elements on a substrate in the radio frequency front-end module.

[0005] In a first aspect, embodiments of the present application provide a radio frequency front-end module, comprising:

[0006] A substrate, a first pad for grounding is arranged on a surface of the substrate;

[0007] A power amplification chip, arranged on the substrate, and the power amplification chip is internally provided with a first amplification transistor, a second amplification transistor, and a capacitor network connected with an output end of the first amplification transistor and an output end of the second amplification transistor;

[0008] A connecting piece, connected to the capacitor network and the first pad, wherein the connecting piece is an inductive element, used for adjusting impedance of the power amplification chip in cooperation with the capacitor network.

[0009] In some embodiments, the connecting piece comprises:

[0010] A first bonding wire, one end of the first bonding wire is connected with the capacitor network, and the other end of the first bonding wire is connected with the first pad.

[0011] In some embodiments, the height of the first bonding wire is 3-6 mil, and / or the length of the first bonding wire is 330-400 μm.

[0012] In some embodiments, the power amplifier chip is provided with a second pad corresponding to the first pad on a side close to the substrate, and the connecting member comprises a bump arranged on the second pad and used for connecting with the first pad.

[0013] The power amplifier chip is further provided with a connecting line, one end of the connecting line is connected to the capacitor network, and the other end of the connecting line is connected to the second pad.

[0014] In some embodiments, the radio frequency front-end module further comprises a balun arranged on the substrate, the balun comprises a primary coil and a secondary coil, a first end of the primary coil is connected to the output end of the first amplifier transistor, a second end of the primary coil is connected to the output end of the second amplifier transistor, a first end of the secondary coil is an output end of the radio frequency front-end module, and a second end of the secondary coil is used for grounding.

[0015] In some embodiments, the capacitor network is arranged on a side of the power amplifier chip close to the balun, and the first pad is arranged between the power amplifier chip and the balun.

[0016] In some embodiments, the power amplifier chip and the balun are arranged on the substrate along a first direction, and the first amplifier transistor and the second amplifier transistor are arranged on the power amplifier chip along a second direction perpendicular to the first direction.

[0017] In some embodiments, the capacitor network is arranged on a side of the power amplifier chip close to the balun, and the first amplifier transistor and the second amplifier transistor are arranged on a side of the capacitor network away from the balun.

[0018] In some embodiments, the power amplifier chip comprises at least two first amplifier transistors and at least two second amplifier transistors, and the at least two first amplifier transistors and the at least two second amplifier transistors are arranged along the second direction.

[0019] In some embodiments, the power amplifier chip is provided with a second pad corresponding to the first pad on a side close to the balun.

[0020] The capacitor network comprises at least a first capacitor and a second capacitor, wherein a first end of the first capacitor is connected to the output end of the first amplifier transistor, a first end of the second capacitor is connected to the output end of the second amplifier transistor, and a second end of the first capacitor, a second end of the second capacitor and the second pad are connected to each other.

[0021] In some embodiments, the first capacitor is arranged on a side of the first amplifier transistor close to the balun; and / or,

[0022] The second capacitor is arranged on a side of the second amplifier transistor close to the balun.

[0023] In some embodiments, the capacitance network further comprises a third capacitor, a first end of the third capacitor being connected to the output end of the first amplification transistor, and a second end of the third capacitor being connected to the output end of the second amplification transistor.

[0024] In some embodiments, the first amplification transistor and the second amplification transistor are symmetrically arranged about a first axis extending in the first direction, the first capacitor and the second capacitor are symmetrically arranged about the first axis, and the third capacitor is arranged on the first axis.

[0025] In some embodiments, the third capacitor is arranged on a side of the first capacitor and the second capacitor close to the first amplification transistor and the second amplification transistor.

[0026] In some embodiments, the capacitance network further comprises a fourth capacitor and a fifth capacitor;

[0027] The fourth capacitor is connected in series between the output end of the first amplification transistor and the first end of the primary coil, and the fifth capacitor is connected in series between the output end of the second amplification transistor and the second end of the primary coil.

[0028] In some embodiments, the fourth capacitor is arranged on a side of the first capacitor away from the first axis, and the fifth capacitor is arranged on a side of the second capacitor away from the first axis.

[0029] In some embodiments, the power amplification chip further comprises at least two third pads arranged on a side close to the balun, the at least two third pads being respectively connected to the output end of the first amplification transistor and the output end of the second amplification transistor.

[0030] The substrate comprises at least two fourth pads corresponding to the third pads, the at least two fourth pads being respectively connected to the first end of the primary coil and the second end of the primary coil, and each third pad is connected to the corresponding fourth pad through a second bonding wire.

[0031] In some embodiments, the first pad and the second pad are arranged on a first axis extending in the first direction;

[0032] The at least two third pads are symmetrically arranged about the first axis, and / or the at least two fourth pads are symmetrically arranged about the first axis.

[0033] In some embodiments, the substrate further comprises a fifth pad, a sixth pad, and a power supply port for connecting a voltage stabilizing power supply, and the power amplification chip comprises a seventh pad connected to the output end of the first amplification transistor and an eighth pad connected to the output end of the second amplification transistor.

[0034] The radio frequency front-end module further includes a first inductive element and a second inductive element, the fifth pad is connected to the power supply port through the first inductive element, and the sixth pad is connected to the power supply port through the second inductive element.

[0035] The fifth pad is further connected to the seventh pad through a bonding wire or a bump, and the sixth pad is further connected to the eighth pad through a bonding wire or a bump.

[0036] In some embodiments, the first capacitor and the second capacitor are symmetrically arranged about a first axis extending in the first direction, the fourth capacitor and the fifth capacitor are symmetrically arranged about the first axis, the fifth pad is arranged on a side of the third pad away from the first axis, and the sixth pad is arranged on a side of the fourth pad away from the first axis.

[0037] In some embodiments, the primary coil includes a first primary coil segment and a second primary coil segment connected to each other, and the balun further includes a sixth capacitor, a first end of the sixth capacitor being connected to a connection point between the first primary coil segment and the second primary coil segment, and a second end of the sixth capacitor being grounded.

[0038] In a second aspect, the embodiments of the present application further provide an electronic device including the radio frequency front-end module provided by any of the embodiments of the present application.

[0039] To sum up, the embodiments of the present application provide a radio frequency front-end module and an electronic device. The radio frequency front-end module includes a substrate, a surface of the substrate being provided with at least a first pad for grounding; a power amplifier chip, the power amplifier chip being arranged on the substrate, and the power amplifier chip being internally provided with a first amplification transistor, a second amplification transistor, and a capacitor network connected to an output end of the first amplification transistor and an output end of the second amplification transistor; and a connecting element, the connecting element being connected to the capacitor network and the first pad, wherein the connecting element is an inductive element, and is used to adjust the impedance of the power amplifier chip in cooperation with the capacitor network. It should be understood that, compared with the related art, the present application uses an inductive parasitic connecting element to replace a matching inductor between the capacitor network and the ground in the power amplifier chip. On the one hand, the parameters of the connecting element can be flexibly adjusted in actual testing, so as to configure the inductance of the power amplifier chip to meet the harmonic impedance requirements, and the best connecting element parameters can be configured when the radio frequency front-end module is packaged, so that the harmonic impedance of the power amplifier chip meets the index. On the other hand, the volume of the power amplifier chip and even the radio frequency front-end module is effectively reduced, and the arrangement and setting of the elements on the substrate in the radio frequency front-end module are optimized. BRIEF DESCRIPTION OF DRAWINGS

[0040] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced as follows. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without any creative effort.

[0041] Figure 1 A component layout diagram of a radio frequency front end module according to an embodiment of the present application;

[0042] Figure 2 A circuit structure diagram of a radio frequency front end module according to an embodiment of the present application;

[0043] Figure 3 Another component layout diagram of a radio frequency front end module according to an embodiment of the present application;

[0044] Figure 4 Another circuit structure diagram of a radio frequency front end module according to an embodiment of the present application;

[0045] Figure 5 A connection diagram of a first pad and a second pad in a radio frequency front end module according to an embodiment of the present application;

[0046] Figure 6 Still another circuit structure diagram of a radio frequency front end module according to an embodiment of the present application;

[0047] Figure 7 Still another circuit structure diagram of a radio frequency front end module according to an embodiment of the present application;

[0048] Figure 8 Still another component layout diagram of a radio frequency front end module according to an embodiment of the present application;

[0049] Figure 9 Still another circuit structure diagram of a radio frequency front end module according to an embodiment of the present application;

[0050] Figure 10 A schematic block diagram of an electronic device according to an embodiment of the present application;

[0051] Reference signs:

[0052] 1, radio frequency front-end module; 10, substrate; 11, first pad; 12, fourth pad; 13, fifth pad; 14, sixth pad; 15, power supply port; 20, power amplifier chip; 21, first amplification transistor; 22, second amplification transistor; 23, capacitor network; 231, first capacitor; 232, second capacitor; 233, third capacitor; 234, fourth capacitor; 235, fifth capacitor; 24, second pad; 25, connecting line; 26, third pad; 27, first inductive element; 28, second inductive element; 291, seventh pad; 292, eighth pad; 30, connecting piece; 31, first bonding wire; 32, bump; 40, balun; 41, primary coil; 411, first primary coil segment; 412, second primary coil segment; 42, secondary coil; 43, sixth capacitor; 50, second bonding wire; 2, electronic device; D1, first direction; D2, second direction; L1, first axis. DETAILED DESCRIPTION

[0053] The technical solutions of the embodiments of the present application will be described below with reference to the drawings of the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all embodiments. Based on the embodiments of the present application, other embodiments obtained by those of ordinary skill in the art without creative labor are within the scope of protection of the present application. The flowchart shown in the drawings is only an example and does not necessarily include all contents and operations / steps, nor does it necessarily execute in the order described. For example, some operations / steps can be further divided, combined or partially combined, so the actual execution order may be changed according to the actual situation.

[0054] Please refer to Figures 1-2 , Figure 1 An element layout diagram of the radio frequency front-end module 1 provided by an embodiment of the present application is shown in Figure 2 An electrical circuit structure diagram of the radio frequency front-end module 1 provided by an embodiment of the present application is shown in

[0055] As Figures 1-2 shown, the present embodiment provides a radio frequency front-end module 1, which includes a substrate 10, a power amplifier chip 20 and a connecting piece 30.

[0056] It should be noted that the radio frequency front-end module 1 is a component that integrates one or more than one discrete device such as a radio frequency switch, a low noise amplifier, a filter, a duplexer, a power amplifier, and the like into an independent module, thereby improving the integration level and hardware performance and miniaturizing the volume. Specifically, the radio frequency front-end module can be applied to a communication device, which can include an electronic device such as a smartphone, a tablet computer, a smart watch, and the like, and can also include a base station, an NFC (Near Field Communication) device, and the like. The radio frequency front-end module can receive or transmit a radio frequency signal through an antenna in the communication device, and the low noise amplifier is used for signal amplification of the received radio frequency signal. In some embodiments, the radio frequency front-end module can support carrier aggregation, dual connectivity, and MIMO (Multiple Input Multiple Output).

[0057] In the embodiments of the present application, the radio frequency front-end module 1 includes at least one or more power amplifiers. The one or more power amplifiers can be integrated in the same power amplifier chip 20 or in multiple power amplifier chips 20, which is not limited in the present application.

[0058] Further, the radio frequency front-end module can further include at least one other device such as a control chip, a switch chip, a low noise amplifier, a filter, a duplexer, a patch inductor, a patch capacitor, and the like, and of course can not include other discrete devices other than the power amplifier chip, which is not limited in the present application.

[0059] Specifically, the substrate 10 is provided with at least a first pad 11 for grounding, the power amplifier chip 20 is arranged on the substrate 10, and the power amplifier chip 20 is provided with a first amplification transistor 21, a second amplification transistor 22, and a capacitor network 23. The capacitor network 23 is connected to the output end of the first amplification transistor 21 and the output end of the second amplification transistor 22. The first amplification transistor 21 is used for amplifying the signal input from the input end and outputting the amplified signal from the output end. Similarly, the second amplification transistor 22 is used for amplifying the signal input from the input end and outputting the amplified signal from the output end. As an embodiment, the signal output by the first amplification transistor 21 and the signal output by the second amplification transistor 22 are a pair of differential radio frequency signals, that is, the first amplification transistor 21 and the second amplification transistor 22 constitute a push-pull power amplifier circuit or a balanced power amplifier circuit.

[0060] Specifically, the connecting member 30 is connected to the capacitor network 23 and the first pad 11, wherein the connecting member 30 is an inductive element for adjusting the output impedance of the power amplifier chip 20 in cooperation with the capacitor network 23. For example, the inductive element is the first bonding wire 31.

[0061] It should be understood that, in the related art, in order to match the impedance of the power amplifier chip 20, an inductor and a capacitor network 23 connected to the output of the first amplification transistor 21 and the output of the second amplification transistor 22 need to be arranged in the power amplifier chip 20 to adjust the output impedance of the power amplifier chip 20 in cooperation with the inductor.

[0062] Compared with the related art, the application removes the inductor originally arranged on the power amplifier chip 20 and uses a connecting member as a connecting element between the capacitor network 23 and the ground in the power amplifier chip 20, which ensures that the capacitor network 23 is grounded through the inductive element while effectively reducing the volume of the power amplifier chip 20 and even the radio frequency front-end module 1. Moreover, since the inductor is not arranged on the substrate 10, the capacitors in the capacitor network 23 can be arranged more conveniently when packaging the power amplifier chip 20, thereby optimizing the arrangement of elements on the substrate 10 in the radio frequency front-end module 1.

[0063] Please refer to Figure 3 and Figure 4 , Figure 3 another element arrangement schematic diagram of the radio frequency front-end module 1 provided by an embodiment of the application, Figure 4 another circuit structure schematic diagram of the radio frequency front-end module 4 provided by an embodiment of the application.

[0064] As Figure 3 and Figure 4 shown, in some embodiments, the connecting member 30 includes:

[0065] The first bonding wire 31, one end of the first bonding wire 31 is connected to the capacitor network 23, and the other end of the first bonding wire 31 is connected to the first pad 11.

[0066] It should be understood that, if the inductor is integrated in the power amplifier chip 20 according to the related art, since the inductance of the ready-made inductor is often fixed, it will often be difficult to meet the index of the harmonic impedance of the power amplifier chip 20, and the inductance is fixed and cannot be adjusted after the power amplifier chip 20 is produced.

[0067] Compared with the related art, the embodiment adopts the first bonding wire 31 to replace the inductor, the inductance provided by the first bonding wire 31 in the circuit is related to the length and height of the first bonding wire 31, and in the process of testing, packaging, etc. of the power amplification chip 20, the length and / or height of the first bonding wire 31 can be adjusted, that is, the length and / or height of the first bonding wire 31 can be adjusted more flexibly according to the actual test result before mass production, so as to set the inductance provided by the first bonding wire 31 to the target value, so as to achieve the expected harmonic impedance range.

[0068] In some embodiments, by adjusting the length and / or height of the first bonding wire 31, the parasitic inductance of the first bonding wire 31 can be flexibly controlled in the range of 0.1nH-1nH according to the demand.

[0069] In some embodiments, the height of the first bonding wire 31 is 3-6mil, and / or the length of the first bonding wire 31 is 330-400μm.

[0070] Specifically, based on the above height and length range of the first bonding wire 31, an inductance of 0.3-0.4nH can be provided in the circuit, and a resonance frequency of about 5GHz can be generated in cooperation with the capacitor network 23.

[0071] Please refer to Figure 4 and Figure 5 , Figure 4 Another circuit structure schematic diagram of the radio frequency front end module 1 provided by an embodiment of the present application is shown in Figure 5 A connection schematic diagram of the first pad 11 and the second pad 24 in the radio frequency front end module 1 provided by an embodiment of the present application is shown in

[0072] As Figure 4 and Figure 5 shown, in some other embodiments, the power amplification chip 20 is provided with the second pad 24 corresponding to the first pad 11 on the side close to the balun, and the connecting piece 30 includes the bump 32, which is arranged on the second pad 24 and used for connecting with the first pad 11.

[0073] The power amplification chip 20 is also provided with the connecting line 25, one end of the connecting line 25 is connected with the capacitor network 23, and the other end of the connecting line 25 is connected with the second pad 24.

[0074] For example, the connecting line 25 is a spiral metal wire.

[0075] Specifically, the bump 32 is also called bump, and is a metal element. When the power amplifier chip 20 is arranged on the substrate 10, the first pad 11 and the second pad 24 are partially overlapped or completely overlapped, and the first pad 11 and the second pad 24 are electrically connected through the bump 32. The capacitor network 23 is grounded through the circuit formed by the connecting line 25, the second pad 24, the bump 32 and the first pad 11. The connecting line 25 is inductive in the circuit, and the bump 32 also has a certain parasitic inductance. The size of the parasitic inductance can be adjusted by adjusting the area and height of the bump. Therefore, before the power amplifier chip 20 is mass-produced, the area and height of the bump can be adjusted more flexibly according to the actual test results, that is, the inductance provided by the bump can be easily set to a target value within a certain range to achieve the expected harmonic impedance range.

[0076] Please refer to Figure 6 and Figure 7 , Figure 6 FIG. 4 is another circuit structure schematic diagram of the radio frequency front-end module provided by an embodiment of the present application. Figure 7 FIG. 5 is still another circuit structure schematic diagram of the radio frequency front-end module 1 provided by an embodiment of the present application.

[0077] As shown in Figure 6 and Figure 7 , in some embodiments, the radio frequency front-end module 1 further comprises a balun 40 arranged on the substrate 10. The balun 40 comprises a primary coil 41 and a secondary coil 42. The first end of the primary coil 41 is connected to the output end of the first amplification transistor 21, and the second end of the primary coil 41 is connected to the output end of the second amplification transistor 22. The first end of the secondary coil 42 is the output end of the radio frequency front-end module 1, and the second end of the secondary coil 42 is used for grounding. The second end of the secondary coil 42 can be directly grounded, or grounded through a capacitor, or grounded through some impedance matching elements (such as capacitors and / or inductors).

[0078] Specifically, the power amplifier chip 20 has two output ends, and the output end of the first amplification transistor 21 and the output end of the second amplification transistor 22 are respectively connected to the two output ends of the power amplifier chip 20. The power amplifier chip 20 is used to output a differential signal from the two output ends.

[0079] Specifically, the balun 40 is also called balun or balanced-unbalanced impedance converter. The input end of the balun 40 is the first end and the second end of the primary coil 41, and the output end of the balun 40 is the first end of the secondary coil 42. The second end of the secondary coil 42 is grounded. The balun 40 is used to receive the differential signal output by the power amplifier chip 20 from the first end and the second end of the primary coil 41, convert the differential signal into a single-ended target signal, and output the converted target signal from the first end of the secondary coil 42.

[0080] It should be noted that the second terminal of the secondary coil 42 can be directly grounded or grounded through impedance matching components (including but not limited to capacitors, inductors, etc.).

[0081] Please see Figure 8 , Figure 8 This is a schematic diagram of another component layout of the radio frequency front-end module 1 provided in an embodiment of this application.

[0082] like Figure 3 and Figure 8 As shown, in some embodiments, the capacitor network 23 is disposed on the side of the power amplifier chip 20 near the balun 40, and the first pad 11 is disposed between the power amplifier chip 20 and the balun 40.

[0083] It should be understood that, based on the fact that the capacitor network 23 is connected to the output terminals of the first amplifying transistor 21 and the second amplifying transistor 22, and the two input terminals of the balun 40 (the first and second terminals of the primary coil 41) are respectively connected to the output terminals of the first amplifying transistor 21 and the second amplifying transistor 22, in this embodiment of the application, the capacitor network 23 is placed close to the balun 40, and the first pad 11 for grounding is placed between the power amplifier chip 20 and the balun 40, which makes the circuit layout of the RF front-end module 1 compact and makes full use of the space on the substrate 10.

[0084] In some embodiments, the power amplifier chip 20 and the balun 40 are disposed on the substrate 10 along a first direction D1, and the first amplifying transistor 21 and the second amplifying transistor 22 are disposed on the power amplifier chip 20 along a second direction D2 intersecting the first direction D1; and the capacitor network 23 is disposed in the power amplifier chip 20 on the side close to the balun 40, and the first amplifying transistor 21 and the second amplifying transistor 22 are disposed on the side of the capacitor network 23 away from the balun 40.

[0085] First, it should be noted that in the embodiments described in this application and the accompanying drawings, the first direction D1 is used as the vertical direction and the second direction D2 is used as the horizontal direction for illustrative purposes. However, the setting of the first direction D1 should not be limited to the vertical direction, and the second direction D2 should not be limited to the horizontal direction in the same way.

[0086] For example, the second direction can be perpendicular to the first direction. The first amplifying transistor 21 and the second amplifying transistor 22 are arranged on the power amplifier chip 20 along the second direction D2, which is perpendicular to the first direction D1. This reduces the space occupied by the power amplifier chip 20 in the first direction D1 and facilitates the overall symmetrical layout of the power amplifier chip 20 and the RF front-end module 1.

[0087] In some embodiments, the power amplification chip 20 comprises at least two first amplification transistors 21 and at least two second amplification transistors 22, and the at least two first amplification transistors 21 and the at least two second amplification transistors 22 are arranged along the second direction D2.

[0088] Specifically, the first amplification transistors 21 can be one, two or more. For example, the power amplification chip 20 comprises at least two first amplification transistors 21 arranged in parallel, the input terminals of each first amplification transistor 21 are connected to receive the same signal input, and the output terminals of each first amplification transistor 21 are connected to the first end of the primary coil 41. The at least two first amplification transistors 21 are arranged along the second direction D2 in the power amplification chip 20, so that the space occupied by the power amplification chip 20 in the first direction D1 is reduced, and it is also convenient for the first amplification transistors 21 to be connected to the balun on the substrate.

[0089] Similarly, the second amplification transistors 22 can be one, two or more. For example, the power amplification chip 20 comprises at least two second amplification transistors 22 arranged in parallel, the input terminals of each second amplification transistor 22 are connected to receive the same signal input, and the output terminals of each second amplification transistor 22 are connected to the first end of the primary coil 41. The at least two second amplification transistors 22 are arranged along the second direction D2 in the power amplification chip 20, so that the space occupied by the power amplification chip 20 in the first direction D1 is reduced, and it is also convenient for the second amplification transistors 22 to be connected to the balun on the substrate.

[0090] For example, the input terminal of each second amplification transistor 22 is also provided with an input capacitor one by one, and the input terminal of each second amplification transistor 22 is connected to the first plate of the corresponding input capacitor, respectively. The second plates of the input capacitors are connected to each other and receive the same radio frequency input signal. In other words, the input terminals of the second amplification transistors 22 can not be directly connected, but connected through the corresponding input capacitors.

[0091] As shown in FIG. 1, Figures 3-8 In some embodiments, the power amplification chip 20 is provided with a second pad 24 corresponding to the first pad 11 on the side close to the balun 40.

[0092] The capacitor network 23 comprises at least a first capacitor 231 and a second capacitor 232, wherein the first end of the first capacitor 231 is connected to the output terminal of the first amplification transistor 21, the first end of the second capacitor 232 is connected to the output terminal of the second amplification transistor 22, and the second end of the first capacitor 231, the second end of the second capacitor 232 and the second pad 24 are connected to each other.

[0093] In one implementation, the first capacitor 231 and the second capacitor 232 are used in conjunction with the connector to adjust the second harmonic impedance of the power amplifier chip 20, so that the impedance of the power amplifier chip 20 to the second harmonic is closer to the short circuit point, thereby improving the working efficiency and linearity of the power amplifier chip 20.

[0094] by Figure 5 Taking an example, when the power amplifier chip 20 is disposed on the substrate 10, the first pad 11 and the second pad 24 are opposite each other and connected by a bump. The output terminal of the first amplifying transistor 21 is grounded sequentially through the first capacitor 231, the second pad 24, the bump, and the first pad 11. The output terminal of the second amplifying transistor 22 is grounded sequentially through the second capacitor 232, the second pad 24, the bump, and the first pad 11. Alternatively, the first pad 11 and the second pad 24 can be as follows: Figure 1 They are usually connected by the first bonding wire.

[0095] It should be understood that, since both capacitor network 23 and balun 40 are connected to the output terminals of the first amplifying transistor 21 and the second amplifying transistor 22, and capacitor network 23 is also grounded to the first pad 11 through the second pad 24, placing the second pad 24 on the side of power amplifier chip 20 closer to balun 40 makes it easier for capacitor network 23 and balun 40 to connect to the output terminals of the first amplifying transistor 21 and the second amplifying transistor 22, making the layout of RF front-end module 1 more compact and reasonable.

[0096] In some embodiments, a first capacitor 231 is disposed on the side of the first amplifying transistor 21 near the balun 40; and / or, a second capacitor 232 is disposed on the side of the second amplifying transistor 22 near the balun 40.

[0097] It should be understood that the first capacitor 231 and the second capacitor 232 are placed in the space near the balun 40 in the power amplifier chip 20, so that the positions of the first capacitor 231, the second capacitor 232 and the second pad 24 are close to each other, which facilitates the routing between the first capacitor 231 and the second pad 24, and between the second capacitor 232 and the second pad 24.

[0098] In some embodiments, the capacitor network 23 further includes a third capacitor 233, the first end of which is connected to the output of the first amplifying transistor 21, and the second end of which is connected to the output of the second amplifying transistor 22.

[0099] In one implementation, the third capacitor 233 works together with the first capacitor 231 and the second capacitor 232 to adjust the third harmonic impedance of the power amplifier chip 20, so that the impedance of the power amplifier chip 20 to the third harmonic is also close to the short circuit point.

[0100] In some embodiments, the first amplification transistor 21 and the second amplification transistor 22 are symmetrically arranged about a first axis L1 extending along the first direction D1, the first capacitor 231 and the second capacitor 232 are symmetrically arranged about the first axis L1, and the third capacitor 233 is arranged on the first axis L1.

[0101] It should be understood that the third capacitor 233 is arranged on the first axis L1 based on the fact that the first amplification transistor 21 and the second amplification transistor 22 are respectively connected to the two ends of the third capacitor 233, so that the space between the first amplification transistor 21 and the second amplification transistor 22 is fully utilized, and the wiring between the third capacitor 233 and the first amplification transistor 21 and the wiring between the third capacitor 233 and the second amplification transistor 22 are facilitated.

[0102] In some embodiments, the third capacitor 233 is arranged on the side of the first capacitor 231 and the second capacitor 232 close to the first amplification transistor 21 and the second amplification transistor 22.

[0103] Specifically, the position of the third capacitor 233 in the present embodiment fully utilizes the space in the power amplification chip 20, and the arrangement of the third capacitor 233 between the first capacitor 231 and the second capacitor 232 and the first amplification transistor 21 and the second amplification transistor 22 facilitates the wiring between the third capacitor 233 and the first amplification transistor 21 and the wiring between the third capacitor 233 and the second amplification transistor 22.

[0104] In some embodiments, the capacitor network 23 further comprises a fourth capacitor 234 and a fifth capacitor 235.

[0105] The fourth capacitor 234 is connected in series between the output end of the first amplification transistor 21 and the first end of the primary coil 41, and the fifth capacitor 235 is connected in series between the output end of the second amplification transistor 22 and the second end of the primary coil 41.

[0106] Specifically, the fourth capacitor 234 and the fifth capacitor 235 can participate in impedance matching together with the balun 40, and can at least partially offset the adverse effects caused by the parasitic inductance of the balun 40, thereby improving the output power of the differential radio frequency signal and further improving the signal output quality of the first amplification transistor 21 and the second amplification transistor 22.

[0107] As an embodiment, the fourth capacitor 234 and the fifth capacitor 235 have equal capacitance values to improve the balance of the power amplifier. For example, the fourth capacitor 234 and the fifth capacitor 235 can have a capacitance value of 5pF-15pF, which can better offset the parasitic inductance of the balun.

[0108] It should be noted that the first capacitor 231, the second capacitor 232, the third capacitor 233, the fourth capacitor 234 and the fifth capacitor 235 in the above embodiments all belong to a part of the capacitor network 23, and the first capacitor 231, the second capacitor 232, the third capacitor 233, the fourth capacitor 234 and the fifth capacitor 235 are all capacitive elements, which are used in cooperation with the connecting piece 30 to adjust the output impedance of the power amplification chip 20.

[0109] Exemplarily, when the working frequency band of the power amplification chip is a sub 6GHz frequency band, the capacitance values of the first capacitor 231 and the second capacitor 232 are equal, both being 1pF-5pF, the capacitance value of the third capacitor 233 is 0.5pF-3pF, and the capacitance values of the fourth capacitor 234 and the fifth capacitor 235 are equal and both are 1pF-3pF, which can effectively improve the working efficiency and linearity of the power amplification chip in the sub 6GHz frequency band.

[0110] In some embodiments, the fourth capacitor 234 is arranged on the side of the first capacitor 231 away from the first axis L1, and the fifth capacitor 235 is arranged on the side of the second capacitor 232 away from the first axis L1.

[0111] It should be understood that, in the present embodiment, the fourth capacitor 234 and the fifth capacitor 235 are arranged at positions such that the wires between the fourth capacitor 234 and the output end of the first amplification transistor 21, the wires between the fourth capacitor 234 and the first end of the primary coil 41, the wires between the fifth capacitor 235 and the output end of the second amplification transistor 22, and the wires between the fifth capacitor 235 and the second end of the primary coil 41 can all bypass the first capacitor 231 and the second capacitor 232, without causing obstruction to the wires related to the first capacitor 231 and the second capacitor 232, thereby facilitating the layout of the wires inside the power amplification chip 20.

[0112] Further, the fourth capacitor 234 and the fifth capacitor 235 are symmetrically arranged inside the power amplification chip 20 with respect to the first axis L1, which is beneficial to the overall symmetric layout of the power amplification chip 20 and the radio frequency front-end module 1, improves the balance of a pair of differential signals output by the power amplification chip 20, and reduces the occupied space of the power amplification chip 20.

[0113] In some embodiments, the power amplification chip 20 is used to amplify a radio frequency signal in a first communication frequency band, and the first communication frequency band is a medium frequency band, a medium-high frequency band or a high frequency band, for example, a sub 6GHz frequency band. Specifically, the first communication frequency band can be a frequency band around and above 2.4GHz. It can be understood that for a higher frequency band, a smaller inductance is required to achieve the same harmonic impedance, and the inductance provided by the first bonding wire 31 can be easily set to a target value through a bonding wire or a bump to achieve the expected harmonic impedance range.

[0114] Exemplarily, the working frequency band of the power amplification chip 20 is N77 frequency band, and the connecting member 30 is the first bonding wire 31, the height of the first bonding wire 31 is 5-6 mil, the length is 330-400 μm, the capacitance of the first capacitor 231 and the second capacitor 232 is 2.5 pf-3 pf, the parasitic inductance of the first bonding wire 31 resonates with the first capacitor 231 and the second capacitor 232 at about 5 GHz, which is close to the second harmonic frequency of the N77 frequency band, so that the second harmonic impedance is closer to the short-circuit point, and the working efficiency and linearity of the power amplification chip 20 are improved.

[0115] Referring to Figure 9 , Figure 9 Another circuit structure schematic diagram of the radio frequency front end module 1 provided by an embodiment of the present application is provided.

[0116] As Figure 9 shown, in some embodiments, the power amplification chip 20 is also provided with at least two third pads 26 on the side close to the balun 40, and the at least two third pads 26 are respectively connected with the output end of the first amplification transistor 21 and the output end of the second amplification transistor 22.

[0117] The substrate 10 is provided with at least two fourth pads 12 corresponding to the third pads 26 on the side close to the power amplification chip 20, and the at least two fourth pads 12 are respectively connected with the first end of the primary coil 41 and the second end of the primary coil 41, and each third pad 26 is connected with the corresponding fourth pad 12 through the second bonding wire 50.

[0118] Specifically, the fourth pad 12 is a structure on the substrate 10, the output end of the first amplification transistor 21 is connected to the first end of the primary coil 41 through the third pad 26, the second bonding wire 50 and the fourth pad 12 in sequence, and the output end of the second amplification transistor 22 is connected to the second end of the primary coil 41 through the third pad 26, the second bonding wire 50 and the fourth pad 12 in sequence.

[0119] In some embodiments, the first pad 11 and the second pad 24 are arranged on the first axis L1, and the at least two third pads 26 are symmetrically arranged about the first axis L1.

[0120] In some embodiments, the first pad 11 and the second pad 24 are arranged on the first axis L1, and the at least two fourth pads 12 are symmetrically arranged about the first axis L1.

[0121] Optionally, the distance between the first pad 11 and the second pad 24 is greater than 100 microns and less than 200 microns. By setting the distance between the two pads within this range, the length and height of the first bonding wire can be reasonably configured to achieve the desired harmonic impedance range. For example, the distance between the first pad 11 and the second pad 24 is approximately 150 microns.

[0122] It should be understood that the third pad 26 and the fourth pad 12 are arranged in the embodiments of the present application in such a way that the occupied space of the radio frequency front-end module 1 in the first direction D1 is reduced, which is more convenient for the capacitive network 23 and the balun 40 to be connected to the output terminals of the first amplification transistor 21 and the second amplification transistor 22, and the layout of the radio frequency front-end module 1 is more compact and reasonable.

[0123] In some embodiments, the substrate 10 is further provided with a fifth pad 13, a sixth pad 14, and a power supply port 15 for connecting a voltage stabilizing power supply, and the power amplification chip 20 is provided with a seventh pad 291 connected to the output terminal of the first amplification transistor 21 and an eighth pad 292 connected to the output terminal of the second amplification transistor 22.

[0124] The radio frequency front-end module 1 further comprises a first inductive element 27 and a second inductive element 28, the fifth pad 13 is connected to the power supply port 15 through the first inductive element 27, and the sixth pad 14 is connected to the power supply port 15 through the second inductive element 28.

[0125] The fifth pad 13 is further connected to the seventh pad 291 through a bonding wire or a bump, and the sixth pad 14 is further connected to the eighth pad 292 through a bonding wire or a bump.

[0126] Specifically, the power supply port 15 is used to be connected to the voltage stabilizing power supply. When the voltage stabilizing power supply is connected to the power supply port 15, the stable voltage can be provided for the output terminal of the first amplification transistor 21 through the path formed by the power supply port 15, the first inductive element 27, the fifth pad 13, and the seventh pad 291, and the stable voltage can be provided for the output terminal of the second amplification transistor 22 through the path formed by the power supply port 15, the second inductive element 28, the sixth pad 14, and the eighth pad 292, so as to ensure the normal operation of the power amplification chip 20.

[0127] In the embodiments of the present application, the first inductive element 27 and the second inductive element 28 can be connected to the same power supply port 15 on the substrate 10, or can be connected to different power supply ports 15 on the substrate 10.

[0128] In some embodiments, the first capacitor 231 and the second capacitor 232 are symmetrically arranged about a first axis L1 extending along the first direction D1, the fourth capacitor 234 and the fifth capacitor 235 are symmetrically arranged about the first axis L1, the fifth pad 13 is arranged on a side of the third pad 26 away from the first axis L1, and the sixth pad 14 is arranged on a side of the fourth pad 12 away from the first axis L1.

[0129] It should be understood that arranging the fifth pad 13 on the side of the third pad 26 away from the first axis L1 can avoid the wires between the fifth pad 13 and the seventh pad 291 from blocking other wires in the capacitor network 23, and similarly, arranging the sixth pad 14 on the side of the fourth pad 12 away from the first axis L1 can avoid the wires between the fifth pad 13 and the seventh pad 291 from blocking other wires in the capacitor network 23.

[0130] Further, the fifth pad 13 and the sixth pad 14 are symmetrically arranged about the first axis L1 within the power amplifier chip 20, which is conducive to the overall symmetric layout of the radio frequency front-end module 1 and reduces the occupied space of the power amplifier chip 20.

[0131] In some embodiments, the primary coil 41 includes a first primary coil 41 segment and a second primary coil 41 segment connected to each other, and the balun 40 further includes a sixth capacitor 43, a first end of the sixth capacitor 43 being connected to a connection point between the first primary coil 41 segment and the second primary coil 41 segment, and a second end of the sixth capacitor 43 being grounded. For example, the sixth capacitor 43 can be used to adjust the second-order harmonic impedance and improve the balance of the balun.

[0132] Referring to Figure 10 , Figure 10 FIG. 1 shows a schematic block diagram of an electronic device 2 according to an embodiment of the present application.

[0133] As Figures 1-10 shown, the electronic device 2 according to an embodiment of the present application further includes the radio frequency front-end module 1 according to any embodiment of the present application.

[0134] For example, the electronic device 2 can include a smart phone, a tablet computer, a smart watch, or the like, and the above electronic devices 2 can all realize the communication function with the outside through the radio frequency front-end module 1.

[0135] In summary, the embodiment of the present application provides a radio frequency front-end module 1 and an electronic device 2. The radio frequency front-end module 1 comprises: a substrate 10, the surface of the substrate 10 is provided with at least a first pad 11 for grounding; a power amplifier chip 20, which is arranged on the substrate 10, and the power amplifier chip 20 is internally provided with a first amplification transistor 21, a second amplification transistor 22, and a capacitor network 23 connected with the output end of the first amplification transistor 21 and the output end of the second amplification transistor 22; and a connecting piece 30, which is connected to the capacitor network 23 and the first pad 11, wherein the connecting piece 30 is an inductive element, and is used to cooperate with the capacitor network 23 to adjust the output impedance of the power amplifier chip 20. It should be understood that, compared with the related art, the present application removes the inductor originally arranged on the power amplifier chip 20, and instead uses an inductive parasitic connecting piece as a connecting element between the capacitor network 23 and the ground in the power amplifier chip 20. On the one hand, it is easier to configure a corresponding inductance for the power amplifier chip 20 when packaging the radio frequency front-end module 1, so that the harmonic impedance of the power amplifier chip 20 meets the index. On the other hand, it effectively reduces the volume of the power amplifier chip 20 and even the radio frequency front-end module 1, and optimizes the arrangement and setting of the elements on the substrate 10 in the radio frequency front-end module 1.

[0136] The above merely provides the specific embodiments of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art can easily think of various equivalent modifications or replacements within the technical range disclosed by the present application, and these modifications or replacements should be covered in the protection scope of the present application. The protection scope of the present application should be subject to the protection scope of the claims.

[0137] It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. Unless specifically defined otherwise in the specification, the terms "mounting", "connected", "connecting" are to be given their broadest interpretation, for example, they can be "fixed connections", "releasable connections", or "integrated connections"; they can be "mechanical connections", or "electrical connections"; they can be "direct connections", or "indirect connections", or "connections" within two elements. The specific meaning of the above terms in the present application can be understood by those skilled in the art according to the specific circumstances. As used in the specification and the appended claims, the singular forms "a", "an" and "the" are intended to include plural forms as well, unless the context clearly dictates otherwise. It will also be understood that the terms "and / or", "at least one of", "one or more of", and "and / or at least one of", used in the specification, can refer to one or more of the listed items, individually, or any combination of the listed items. In this document, the terms "comprise", "comprising", or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but can also include other elements not expressly listed or inherent to such process, method, article, or apparatus.

Claims

1. A radio frequency front-end module, characterized in that, The application relates to a radio frequency front-end module. The radio frequency front-end module comprises: a substrate, which is provided with at least a first pad for grounding; a power amplifier chip, which is arranged on the substrate and is provided with a first amplification transistor, a second amplification transistor and a capacitor network connected with the output end of the first amplification transistor and the output end of the second amplification transistor; 2. The radio frequency front-end module of claim 1, wherein, a connecting element connected with the capacitor network and the first pad, wherein the connecting element is an inductive element and is used for adjusting the impedance of the power amplifier chip in cooperation with the capacitor network. The connecting element comprises:

3. The radio frequency front end module of claim 2, wherein the first and second switches are configured to be controlled by a single control signal. a first bonding wire, one end of which is connected with the capacitor network and the other end of which is connected with the first pad.

4. The radio frequency front end module of claim 1, wherein, The height of the first bonding wire is 3-6 mil, and / or the length of the first bonding wire is 330-400 mu m. The power amplifier chip is provided with a second pad corresponding to the first pad on the side close to the substrate, the connecting element comprises a bump arranged on the second pad and used for connecting with the first pad; 5. The radio frequency front-end module of any one of claims 1-4, wherein the first and second filters are implemented as a single filter. the power amplifier chip is further provided with a connecting wire, one end of which is connected with the capacitor network and the other end of which is connected with the second pad.

6. The radio frequency front end module of claim 5, wherein the first and second switches are configured to be controlled by a single control signal. The radio frequency front-end module further comprises a balun arranged on the substrate, the balun comprises a primary coil and a secondary coil, the first end of the primary coil is connected with the output end of the first amplification transistor, the second end of the primary coil is connected with the output end of the second amplification transistor, the first end of the secondary coil is the output end of the radio frequency front-end module, and the second end of the secondary coil is used for grounding.

7. The radio frequency front end module of claim 5, wherein the first and second switches are configured to be controlled by a single control signal. The capacitor network is arranged on the side of the power amplifier chip close to the balun, and the first pad is arranged between the power amplifier chip and the balun. The power amplifier chip and the balun are arranged on the substrate along a first direction, the first amplification transistor and the second amplification transistor are arranged on the power amplifier chip along a second direction perpendicular to the first direction; 8. The radio frequency front end module of claim 7, wherein the first and second switches are configured to be controlled by a single control signal. the capacitor network is arranged on the side of the power amplifier chip close to the balun, and the first amplification transistor and the second amplification transistor are arranged on the side of the capacitor network away from the balun.

9. The radio frequency front end module of claim 5, wherein, The power amplifier chip comprises at least two first amplification transistors and at least two second amplification transistors, and the at least two first amplification transistors and the at least two second amplification transistors are arranged along the second direction. The power amplifier chip is provided with a second pad corresponding to the first pad on the side close to the balun; 10. The radio frequency front end module of claim 9, wherein the first and second switches are configured to be controlled by a single control signal. 5 the capacitor network comprises at least a first capacitor and a second capacitor, wherein the first end of the first capacitor is connected with the output end of the first amplification transistor, the first end of the second capacitor is connected with the output end of the second amplification transistor, and the second end of the first capacitor, the second end of the second capacitor and the second pad are connected with each other. The first capacitor is arranged on the side of the first amplification transistor close to the balun; and / or, The second capacitor is arranged on a side of the second amplification transistor close to the balun.

11. The radio frequency front end module of claim 9, wherein the first and second switches are configured to be controlled by a single control signal. 1 The capacitor network further comprises a third capacitor, a first end of the third capacitor being connected with the output end of the first amplification transistor, and a second end of the third capacitor being connected with the output end of the second amplification transistor.

12. The radio frequency front end module of claim 11, wherein the first and second switches are configured to be controlled by a single control signal. 5 The first amplification transistor and the second amplification transistor are symmetrically arranged about a first axis extending in a first direction, the first capacitor and the second capacitor are symmetrically arranged about the first axis, and the third capacitor is arranged on the first axis.

13. The radio frequency front end module of claim 12, wherein the first and second switches are configured to be controlled by a single control signal. The third capacitor is arranged on a side of the first capacitor and the second capacitor close to the first amplification transistor and the second amplification transistor.

14. The radio frequency front end module of claim 12, wherein the first and second switches are configured to be controlled by a single control signal. 15 The capacitor network further comprises a fourth capacitor and a fifth capacitor. The fourth capacitor is connected in series between the output end of the first amplification transistor and the first end of the primary coil, and the fifth capacitor is connected in series between the output end of the second amplification transistor and the second end of the primary coil.

15. The radio frequency front end module of claim 14, wherein the first and second switches are configured to be controlled by a single control signal. 15 The fourth capacitor is arranged on a side of the first capacitor away from the first axis, and the fifth capacitor is arranged on a side of the second capacitor away from the first axis.

16. The radio frequency front end module of claim 14, wherein the first and second switches are configured to be controlled by a single control signal. 5 The power amplification chip further comprises at least two third pads arranged on a side of the power amplification chip close to the balun, the at least two third pads being respectively connected with the output end of the first amplification transistor and the output end of the second amplification transistor. The substrate further comprises at least two fourth pads arranged on a side of the substrate close to the power amplification chip, the at least two fourth pads being respectively connected with the first end of the primary coil and the second end of the primary coil, and each of the third pads is connected with the corresponding fourth pad through a second bonding wire.

17. The radio frequency front end module of claim 16, wherein the first and second switches are configured to be controlled by a single control signal. 17 The first pad and the second pad are arranged on a first axis extending in the first direction. The at least two third pads are symmetrically arranged about the first axis, and / or the at least two fourth pads are symmetrically arranged about the first axis.

18. The radio frequency front end module of claim 16, wherein the first and second switches are configured to be controlled by a single control signal. 5 The substrate further comprises a fifth pad, a sixth pad, and a power supply port for connecting a voltage stabilizing power supply, and the power amplification chip further comprises a seventh pad connected with the output end of the first amplification transistor and an eighth pad connected with the output end of the second amplification transistor. The radio frequency front end module further comprises a first inductive element and a second inductive element, the fifth pad is connected with the power supply port through the first inductive element, and the sixth pad is connected with the power supply port through the second inductive element. The fifth pad is further connected with the seventh pad through a bonding wire or a bump, and the sixth pad is further connected with the eighth pad through a bonding wire or a bump.

19. The radio frequency front end module of claim 18, wherein the first and second switches are configured to be controlled by a single control signal. 19 The first capacitor and the second capacitor are symmetrically arranged about a first axis extending in the first direction, the fourth capacitor and the fifth capacitor are symmetrically arranged about the first axis, the fifth pad is arranged on a side of the third pad away from the first axis, and the sixth pad is arranged on a side of the fourth pad away from the first axis.

20. The radio frequency front end module of claim 5, wherein, The primary coil includes a first primary coil segment and a second primary coil segment connected to each other, and the balun further includes a sixth capacitor, a first end of the sixth capacitor being connected to a connection point between the first primary coil segment and the second primary coil segment, and a second end of the sixth capacitor being grounded.

21. An electronic device, comprising: The radio frequency front end module includes the balun as claimed in any one of claims 1-20.

Images