Structure for controlling on-off of large current by small signal

Abstract

The application discloses a small signal control large current on-off structure, which relates to the basic circuit technology, and comprises an on-off device, the on-off device is arranged in a main power supply circuit structure and is used for controlling the on-off between power supply input and power supply output, the on-off device is connected with a signal control circuit, and the signal control circuit is connected with the on-off device when large current is needed to pass through. The signal control circuit receives a first level output by the controller and controls the on-off device to be turned on. Under the condition that large current does not need to pass through, the signal control circuit receives the second level output by the controller and controls the on-off device to be turned off. According to the circuit structure for controlling on-off of the large current through the small signal, the efficiency can be improved, the cost can be reduced, and the system stability and reliability can be improved.

Description

Technical Field

[0001] This application relates to the field of basic circuit technology, and in particular to a small-signal control structure for switching on and off large currents. Background Technology

[0002] With the rapid development of electronic technology, the demand for circuit control is increasing. Many applications, such as industrial automation, home appliances, and portable devices, require precise control of high-current loads. However, traditional control methods often suffer from low efficiency, slow response speed, and high cost, limiting their widespread application in modern electronic systems.

[0003] In terms of efficiency, traditional high-current control circuits typically require significant drive power, which not only increases energy consumption but also limits system efficiency. Regarding response speed, traditional circuits often struggle to achieve rapid response under rapidly changing load conditions, especially in applications requiring quick switching. Finally, in terms of cost control, traditional designs often use expensive, high-power components, increasing overall cost. Summary of the Invention

[0004] This application provides a small-signal controlled high-current switching structure to improve efficiency, reduce costs, enhance system stability and reliability, and promote the development of electronic technology.

[0005] This application provides a small-signal controlled high-current switching structure, including:

[0006] A switching device is installed in the main power supply circuit structure to control the connection and disconnection between the power input and the power output. A signal control circuit is connected to the switching device. When a large current needs to pass through, the signal control circuit receives a first level output from the controller to control the opening of the switching device; when a large current does not need to pass through, the signal control circuit receives a second level output from the controller to control the closing of the switching device.

[0007] Optionally, the switching device includes: MOSFET Q1, MOSFET Q2, MOSFET Q3, MOSFET Q4, MOSFET Q5, and MOSFET Q6, wherein,

[0008] The drains of MOSFETs Q1, Q3, and Q5 are all connected to the power input terminal, and their sources are connected to the sources of MOSFETs Q2, Q4, and Q6, respectively.

[0009] The drains of MOSFET Q2, MOSFET Q4, and MOSFET Q6 are all connected to the power output terminal;

[0010] The gates of MOSFETs Q1, Q2, Q3, Q4, Q5, and Q6 are connected to the signal control circuit.

[0011] Optionally, the MOSFETs Q1, Q2, Q3, Q4, Q5, and Q6 are all P-type MOSFETs.

[0012] Optionally, the switching device further includes:

[0013] The gates of MOSFETs Q1, Q3, and Q5 are all connected to one end of resistor R3. One end of resistor R3 is also connected to one end of resistor R1, one end of capacitor C1, and the positive terminal of diode D1. The other end of resistor R1, the other end of capacitor C1, and the negative terminal of diode D1 are connected to the source of MOSFET Q5.

[0014] The source of MOSFET Q2, the source of MOSFET Q4, and the gate of MOSFET Q6 are all connected to one end of resistor R4. One end of resistor R4 is also connected to one end of resistor R2, one end of capacitor C2, and the positive terminal of diode D2. The other end of resistor R2, the other end of capacitor C2, and the negative terminal of diode D2 are connected to the source of MOSFET Q6.

[0015] Optionally, the signal control circuit includes: a MOSFET Q7, resistors R5 and R7, wherein,

[0016] The MOSFET Q7 is an N-type MOSFET. The drain of the MOSFET Q7 is connected to ground and one end of resistor R7. The other end of resistor R7 is connected to the gate of the MOSFET Q7. The gate of the MOSFET Q7 is connected to one end of resistor R5. The other end of resistor R5 is connected to a control signal.

[0017] Optionally, the signal control circuit includes: a MOSFET Q8, resistor R6, and resistor R8, wherein,

[0018] The MOSFET Q8 is an N-type MOSFET. The drain of the MOSFET Q8 is connected to ground and one end of resistor R8. The other end of resistor R8 is connected to the gate of the MOSFET Q8. The gate of the MOSFET Q8 is connected to one end of resistor R6. The other end of resistor R6 is connected to a control signal.

[0019] The circuit structure of small-signal control of large-current switching in the embodiments of this application can improve efficiency, reduce cost, and improve system stability and reliability.

[0020] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, the following are specific embodiments of this application. Attached Figure Description

[0021] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of this application. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0022] Figure 1 This is a schematic diagram of the architecture of the small-signal controlled high-current switching structure of this application.

[0023] Figure 2 This is a schematic diagram of the circuit structure for the small-signal control of large-current switching structure of this application. Detailed Implementation

[0024] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0025] This application provides a small-signal controlled high-current switching structure, such as... Figure 1 As shown, it includes:

[0026] A switching device is installed in the main power supply circuit structure to control the connection and disconnection between the power input and the power output. A signal control circuit is connected to the switching device. When a large current needs to pass through, the signal control circuit receives a first level output from the controller to control the opening of the switching device; when a large current does not need to pass through, the signal control circuit receives a second level output from the controller to control the closing of the switching device.

[0027] The working principle of the small-signal controlled high-current switching structure of this application is as follows: The positive terminal of the power supply is connected to the power input interface of this circuit, and the positive terminal of the other end of the power supply is connected to the power output interface of this circuit. The power input interface and the power output interface are connected by a switching device. Control signal one and control signal two of the switching device are connected to the signal output interface of the controller. When the controller receives a command that requires a large current to pass, it outputs a high level to open the switching device; when the controller receives a command that requires a large current to be disconnected, it outputs a low level to close the switching device.

[0028] like Figure 2 As shown, VIN+ is the power input interface, VOUT is the power output interface, and the other circuits are the switching device circuit and the signal control circuit. In some embodiments, the switching device includes: MOSFET Q1, MOSFET Q2, MOSFET Q3, MOSFET Q4, MOSFET Q5, and MOSFET Q6, wherein,

[0029] The drains of MOSFETs Q1, Q3, and Q5 are all connected to the power input terminal, and their sources are connected to the sources of MOSFETs Q2, Q4, and Q6, respectively.

[0030] The drains of MOSFET Q2, MOSFET Q4, and MOSFET Q6 are all connected to the power output terminal;

[0031] The gates of MOSFETs Q1, Q2, Q3, Q4, Q5, and Q6 are connected to the signal control circuit.

[0032] In some embodiments, MOSFETs Q1, Q2, Q3, Q4, Q5, and Q6 are all P-type MOSFETs.

[0033] In some embodiments, the switching device further includes:

[0034] The gates of MOSFETs Q1, Q3, and Q5 are all connected to one end of resistor R3. One end of resistor R3 is also connected to one end of resistor R1, one end of capacitor C1, and the positive terminal of diode D1. The other end of resistor R1, the other end of capacitor C1, and the negative terminal of diode D1 are connected to the source of MOSFET Q5.

[0035] The source of MOSFET Q2, the source of MOSFET Q4, and the gate of MOSFET Q6 are all connected to one end of resistor R4. One end of resistor R4 is also connected to one end of resistor R2, one end of capacitor C2, and the positive terminal of diode D2. The other end of resistor R2, the other end of capacitor C2, and the negative terminal of diode D2 are connected to the source of MOSFET Q6.

[0036] Specifically, such as Figure 2As shown, MOSFETs Q1, Q2, Q3, Q4, Q5, and Q6 are all P-type MOSFETs. The drains of MOSFETs Q1, Q3, and Q5 are connected to the VIN+ interface, their gates are connected to resistor R3, and their sources are connected together. One end of the source is also connected to resistor R1, capacitor C1, and TVS diode D1. Resistor R3 acts as a current limiter to protect the gate of the P-type MOSFET. Resistor R1, capacitor C1, and TVS diode D1 effectively discharge small amounts of static electricity, preventing malfunctions and thus avoiding gate-source breakdown of the MOSFETs, thereby protecting the P-type MOSFETs. The drains of MOSFETs Q2, Q4, and Q6 are connected to the VOUT interface, their gates are connected to resistor R4, and their sources are connected together. One end of the source is also connected to resistor R2, capacitor C2, and TVS diode D2. The resistor R4 acts as a current limiter to protect the gate of the P-type MOSFET. The resistor R2, capacitor C2, and TVS diode D2 discharge small amounts of static electricity to prevent malfunctions in the MOSFET and thus avoid gate-source breakdown, thereby protecting the MOSFET.

[0037] In some embodiments, such as Figure 2 As shown, the signal control circuit includes: MOSFET Q7, resistor R5, and resistor R7, wherein,

[0038] The MOSFET Q7 is an N-type MOSFET. The drain of MOSFET Q7 is connected to ground and one end of resistor R7. The other end of resistor R7 is connected to the gate of MOSFET Q7. The gate of MOSFET Q7 is connected to one end of resistor R5, and the other end of resistor R5 is connected to the first control signal. Resistor R5 serves as a current limiter, restricting the current from the high-level signal output from the controller. Resistor R7 serves to discharge a small amount of static electricity, preventing malfunction of the MOSFET and thus avoiding damage to the gate and source of the MOSFET, thereby protecting the MOSFET.

[0039] In some embodiments, such as Figure 2 As shown, the signal control circuit includes: MOSFET Q8, resistor R6, and resistor R8, wherein,

[0040] The MOSFET Q8 is an N-type MOSFET. The drain of MOSFET Q8 is connected to ground and one end of resistor R8. The other end of resistor R8 is connected to the gate of MOSFET Q8. The gate of MOSFET Q8 is connected to one end of resistor R6, and the other end of resistor R6 is connected to a second control signal. Resistor R6 serves as a current limiter, restricting the current from the high-level signal output from the controller. Resistor R8 serves to discharge a small amount of static electricity, preventing malfunction of the MOSFET and thus avoiding damage to the gate and source of the MOSFET, thereby protecting the MOSFET.

[0041] All components selected in this solution are domestically produced, achieving a 100% domestic content rate. The device design is simple, compact, practical, and features fast switching speed, low energy consumption, and low manufacturing cost. Based on these advantages, it effectively solves the shortcomings of traditional small-signal control of large-current switching.

[0042] It should be noted that, in the embodiments of this application, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0043] The sequence numbers of the embodiments in this application are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments.

[0044] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims. All of these forms are within the protection scope of this application.

Claims

1. A small signal control large current on-off structure, characterized in that, The application relates to a power supply circuit structure, which comprises: a switch device arranged in a main power supply circuit structure and used for controlling the switch between a power supply input and a power supply output, wherein a signal control circuit is connected to the switch device, the signal control circuit receives a first level output by a controller and controls the switch device to be opened when a large current needs to pass through; and the signal control circuit receives a second level output by the controller and controls the switch device to be closed when a large current does not need to pass through. The switch device comprises MOS tubes Q1, Q2, Q3, Q4, Q5 and Q6, wherein the drain of the MOS tube Q1, the drain of the MOS tube Q3 and the drain of the MOS tube Q5 are all connected to a power supply input end, and the source of the MOS tube Q1, the source of the MOS tube Q3 and the source of the MOS tube Q5 are all connected to the source of the MOS tube Q2, the source of the MOS tube Q4 and the source of the MOS tube Q6; the drain of the MOS tube Q2, the drain of the MOS tube Q4 and the drain of the MOS tube Q6 are all connected to a power supply output end; and the gate of the MOS tube Q1, the gate of the MOS tube Q2, the gate of the MOS tube Q3, the gate of the MOS tube Q4, the gate of the MOS tube Q5 and the gate of the MOS tube Q6 are all connected to the signal control circuit.

2. The small signal control large current on-off structure of claim 1, wherein, The MOS tubes Q1, Q2, Q3, Q4, Q5 and Q6 are all P-type MOS tubes. The switch device further comprises: the gate of the MOS tube Q1, the gate of the MOS tube Q3 and the gate of the MOS tube Q5 are all connected to one end of a resistor R3, one end of a resistor R1, one end of a capacitor C1 and the positive electrode of a diode D1, and the other end of the resistor R1, the other end of the capacitor C1 and the negative electrode of the diode D1 are connected to the source of the MOS tube Q5; the source of the MOS tube Q2, the source of the MOS tube Q4 and the gate of the MOS tube Q6 are all connected to one end of a resistor R4, one end of a resistor R2, one end of a capacitor C2 and the positive electrode of a diode D2, and the other end of the resistor R2, the other end of the capacitor C2 and the negative electrode of the diode D2 are connected to the source of the MOS tube Q6.

3. The small signal control large current on-off structure of claim 2, wherein, The signal control circuit comprises a MOS tube Q7, a resistor R5 and a resistor R7, wherein the MOS tube Q7 is an N-type MOS tube, the drain of the MOS tube Q7 is connected to the ground and one end of the resistor R7, the other end of the resistor R7 is connected to the gate of the MOS tube Q7, the gate of the MOS tube Q7 is connected to one end of the resistor R5, and the other end of the resistor R5 is connected to a control signal.

4. The small signal control large current on-off structure of claim 2, wherein, The signal control circuit comprises a MOS tube Q8, a resistor R6 and a resistor R8, wherein the MOS tube Q8 is an N-type MOS tube, the drain of the MOS tube Q8 is connected to the ground and one end of the resistor R8, the other end of the resistor R8 is connected to the gate of the MOS tube Q8, the gate of the MOS tube Q8 is connected to one end of the resistor R6, and the other end of the resistor R6 is connected to a control signal. ​ ​ 5. The small signal control large current on-off structure of claim 4, wherein, ​ ​ 6. The small signal control large current on-off structure of claim 4, wherein, ​ ​

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