Gas spraying device and chemical vapor deposition equipment

Abstract

The utility model provides a gas spraying device and chemical vapor deposition equipment, the gas spraying device is used for introducing reaction gas into a reaction cavity, and the gas spraying device comprises a first introduction channel for introducing first reaction gas into the reaction cavity through a first conveying channel, and a second introduction channel for introducing second reaction gas into the reaction cavity through a second conveying channel; the second introducing channel is used for introducing second reaction gas into the reaction cavity through a second conveying channel; the rotating mechanism is configured to receive and drive the to-be-extended target piece to rotate around the rotating axis; wherein the rotation axis is perpendicular to the plane where the borne target piece is located; the adjusting channel is used for introducing third reaction gas into the reaction cavity through an air outlet of the adjusting channel; wherein the adjusting channel is located in the top area of the reaction cavity, and the axis of the adjusting channel does not coincide with the rotation axis. According to the device, the adjusting channel is eccentrically arranged, so that the adjusting channel avoids the position where the linear speed is zero when the target piece rotates. And finally, the uniformity of the flow field in the central region is improved, and correspondingly, the uniformity of epitaxy on the target piece is also improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of industrial equipment, in particular to a gas spraying device and a chemical vapor deposition equipment. BACKGROUND

[0002] Some chemical reaction equipment, for example: MOCVD (metal organic chemical vapor deposition) equipment, the gas spraying device thereof mainly introduces reaction gas to the surface of a target piece to be epitaxied through the top. In the process of downward conveying, since the target piece is driven to rotate and the linear velocity of different regions of the target piece is different, the outward diffusion effect of the reaction gas is also different. The closer to the central region of the target piece, the smaller the linear velocity of the reaction gas obtained and the worse the diffusion effect.

[0003] Most of the current gas spraying devices adopt a central channel, that is, a separate central channel is arranged at the position corresponding to the rotation center position of the gas spraying device, and the mass flow rate of the reaction gas in the channel is adjusted separately to adjust the flow field in the central region.

[0004] However, the reaction gas is prone to stagnation in the central region, so that the problem of uneven epitaxy of the target piece has not been well solved. CONTENT OF THE INVENTION

[0005] The purpose of the present application is to provide a gas spraying device and a chemical vapor deposition equipment, which can well solve the problem of uneven epitaxy of the target piece caused by the stagnation of the reaction gas in the central region by eccentrically arranging an adjusting channel.

[0006] In a first aspect, the present application provides a gas spraying device for introducing reaction gas into a reaction chamber, comprising: a first introduction channel for introducing first reaction gas into the reaction chamber through a first conveying channel; a second introduction channel for introducing second reaction gas into the reaction chamber through a second conveying channel; a rotating mechanism configured to receive and drive a target piece to be epitaxied to rotate about a rotation axis; wherein the rotation axis is perpendicular to the plane in which the target piece is received; and an adjusting channel for introducing third reaction gas into the reaction chamber through an adjusting channel gas outlet; wherein the adjusting channel is located in the top region of the reaction chamber, and the axis of the adjusting channel does not coincide with the rotation axis.

[0007] The above-mentioned gas spraying device, by eccentrically arranging the adjusting channel, keeps a certain eccentric distance between the adjusting channel and the rotation center, thereby avoiding the position where the linear velocity is zero when the target piece rotates. Finally, the uniformity of the flow field in the central region is improved, and the uniformity of the epitaxy of the target piece is also improved accordingly.

[0008] In combination with the first aspect, optionally, the gas spraying device further comprises a shell having a top, a bottom and the reaction cavity in the interior; the first introduction channel and the second introduction channel are arranged on the top of the shell, respectively; the gas spraying device further comprises a gas uniformizing device and a gas distribution plate arranged on the top of the shell; the gas distribution plate is arranged on the lower side of the gas uniformizing device; the gas uniformizing device is provided with a plurality of gas guide holes; the first delivery channel and the second delivery channel are arranged on the gas distribution plate, respectively; one end of the gas guide hole is in communication with the second introduction channel, and the other end of the gas guide hole is in communication with the reaction cavity through the second delivery channel; one end of the first delivery channel is in communication with the first introduction channel, and the other end of the first delivery channel is in communication with the reaction cavity.

[0009] The gas spraying device described above, by arranging the gas uniformizing device and the gas distribution plate on the top of the shell, the first reaction gas and the second reaction gas are delivered to the reaction cavity for reaction, thereby realizing the epitaxy of the target piece. The second reaction gas enters the reaction cavity after being uniformly distributed, which can be more uniformly distributed in the reaction cavity, thereby the epitaxy of the target piece is also more uniform.

[0010] In combination with the first aspect, optionally, the first delivery channel and the second delivery channel are alternately arranged on the gas distribution plate.

[0011] The gas spraying device described above, by alternately arranging the first delivery channel and the second delivery channel on the gas distribution plate, the first reaction gas and the second reaction gas are mixed more uniformly in the reaction cavity, thereby the reaction of the first reaction gas and the second reaction gas is more thorough and uniform. Ultimately, the uniformity of the epitaxy of the target piece is further improved.

[0012] In combination with the first aspect, optionally, the gas spraying device further comprises a first fixing member; the first fixing member is sleeved and clamped on the adjusting channel; one end of the first fixing member is connected with the inner wall of the top of the shell, and the other end of the first fixing member is connected with the back of the gas uniformizing device away from the reaction cavity.

[0013] The gas spraying device described above, by sleeving and clamping the adjusting channel with the first fixing member, the fixing of the adjusting channel is realized.

[0014] In combination with the first aspect, optionally, the gas spraying device further comprises a second fixing member; the second fixing member is sleeved and clamped on the adjusting channel; the second fixing member is connected with the outer wall of the top of the shell.

[0015] The gas spraying device described above, by sleeving and clamping the adjusting channel with the second fixing member, the fixing of the adjusting channel is realized in another way.

[0016] In conjunction with the first aspect, optionally, the inner wall of the end of the adjustment channel facing the reaction chamber is a frustum side surface; the lower bottom surface of the frustum faces the reaction chamber.

[0017] The aforementioned gas spraying device, by designing the end of the regulating channel facing the reaction chamber in a funnel-like shape, expands the dispersion of the introduced third reactive gas, thereby making the third reactive gas more uniformly distributed within the reaction chamber. Ultimately, this further improves the uniformity of the epitaxial growth of the target part.

[0018] In conjunction with the first aspect, optionally, the angle between the generatrix of the side of the bottom frustum of the adjustment channel and the bottom surface of the frustum is located in the range of [45°, 80°].

[0019] In the aforementioned gas spraying device, if the inclination of the funnel-shaped inner wall of the regulating channel relative to the rotation axis is too large or too small, the distribution of the introduced third reactive gas will be uneven. Therefore, by limiting the inclination of the funnel-shaped inner wall of the regulating channel relative to the rotation axis within the range of [45°, 80°], the distribution of the introduced third reactive gas is further expanded, making the distribution of the third reactive gas within the reaction chamber more uniform. Ultimately, this further improves the uniformity of the epitaxial growth of the target component.

[0020] In conjunction with the first aspect, optionally, the distance between the axis of the adjustment channel at one end of the reaction chamber and the rotation axis is located in the range of [1mm, 15mm].

[0021] The aforementioned gas spraying device further improves the uniformity of the flow field in the central region by limiting the eccentricity of the adjustment channel to a distance within the range of [1mm, 15mm], thereby further improving the uniformity of the extension of the target part.

[0022] In conjunction with the first aspect, optionally, the length of the adjustment channel exposed in the reaction chamber is located in the range of [-25mm, 20mm].

[0023] The aforementioned gas spraying device, by limiting the length of the adjustment channel exposed in the reaction chamber to within the range of [-25mm, 20mm], ensures the uniformity of the introduced third reaction gas after it enters the reaction chamber, and also facilitates the adjustment of the flow rate of the third reaction gas entering the reaction chamber, so as to better solve the problem of uneven extension of the target part caused by the reaction gas easily stagnating in the central area.

[0024] In conjunction with the first aspect, optionally, the inner diameter of the adjustment channel is located in the range of [1 mm, 6 mm].

[0025] The aforementioned gas spraying device, by limiting the inner diameter of the regulating channel to the range of [1mm, 6mm], ensures the linearity of the third reaction gas after it flows out of the nozzle, thereby further improving the uniformity of the central flow field.

[0026] In conjunction with the first aspect, optionally, the gas flow rates of the first inlet channel, the second inlet channel, and the regulating channel can all be adjusted independently.

[0027] The aforementioned gas spraying device, through its design that allows independent adjustment of the gas flow rates of the first inlet channel, the second inlet channel, and the regulating channel, achieves improved uniformity of the central flow field by adjusting the flow rates of the first, second, and third reacting gases, thereby further enhancing the uniformity of the epitaxy of the target component.

[0028] In a second aspect, this application provides a chemical vapor deposition apparatus, including a gas spraying device as described in the first aspect.

[0029] The chemical vapor deposition equipment described above has the same beneficial effects as the first aspect, which will not be elaborated here.

[0030] In summary, the gas spraying device and chemical vapor deposition equipment provided in this application effectively solve the problem of reactive gas easily stagnating in the central region, leading to uneven epitaxy of the target part, by eccentrically setting the regulating channel. By alternately arranging the first and second conveying channels on the gas distribution plate, the mixing of the first and second reactive gases in the reaction chamber is made more uniform, resulting in a more thorough and uniform reaction. This further improves the uniformity of epitaxy on the target part. By designing the end of the regulating channel facing the reaction chamber in a funnel-like shape, the dispersion of the introduced third reactive gas is expanded, resulting in a more uniform distribution of the third reactive gas within the reaction chamber. This further improves the uniformity of epitaxy on the target part. By limiting the inclination of the funnel-shaped inner wall of the regulating channel relative to the rotation axis to the range of [45°, 80°], the dispersion of the introduced third reactive gas is further expanded, further improving the uniform distribution of the third reactive gas within the reaction chamber. By limiting the eccentricity of the adjustment channel to a distance within the range of [1 mm, 15 mm], the uniformity of the flow field in the central region is further improved. Attached Figure Description

[0031] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1 This is a schematic diagram of a first structure of the gas spraying device provided in the embodiments of this application;

[0033] Figure 2 This is a schematic diagram of a second structure of the gas spraying device provided in the embodiments of this application;

[0034] Figure 3 This is a schematic diagram of one installation method for adjusting the channel according to an embodiment of this application;

[0035] Figure 4 This is a schematic diagram illustrating another installation method of the adjustment channel according to an embodiment of this application;

[0036] Figure 5 This is a schematic diagram of the regulating channel in the gas spraying device provided in the embodiments of this application;

[0037] Figure 6 This is a top view of the adjusting channel axis on the target component in the gas spraying device provided in the embodiments of this application;

[0038] Figure 7 This diagram illustrates the flow field effect during the operation of most current gas spray devices.

[0039] Figure 8 This diagram illustrates the flow field effect during the operation of the gas spraying device provided in this embodiment of the application.

[0040] Icons: 100, Gas spraying device; 110, Housing; 111, Top; 112, Bottom; 120, Rotating mechanism; 130, Adjustment channel; 141, First inlet channel; 142, Second inlet channel; 150, Gas equalization device; 151, Air guide hole; 160, Gas distribution plate; 161, First conveying channel; 162, Second conveying channel; 170, First fixing component; 180, Second fixing component; 190, Graphite disk; 200, Target component. Detailed Implementation

[0041] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0042] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0043] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0044] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the utility model product is in use. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. In addition, the terms "first," "second," and "third," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0045] Furthermore, terms such as "horizontal" and "vertical" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0046] In the description of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "set up," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0047] Please refer to Figure 1 , Figure 1This is a schematic diagram of a first structural embodiment of the gas spraying device 100 provided in this application. The gas spraying device 100 provided in this application embodiment is used to introduce reactive gas into a reaction chamber and includes: a first inlet channel 141, which introduces a first reactive gas into the reaction chamber through a first conveying channel 161; a second inlet channel 142, which introduces a second reactive gas into the reaction chamber through a second conveying channel 162; a rotating mechanism 120, configured to receive and drive the target part 200 to be extended to rotate about a rotation axis. The rotation axis is perpendicular to the plane where the target part 200 is located; and an adjusting channel, which introduces a third reactive gas into the reaction chamber through an adjusting channel outlet. The adjusting channel is located in the top 111 region of the reaction chamber, and the axis of the adjusting channel does not coincide with the rotation axis.

[0048] A graphite disk 190 can be mounted on the rotating mechanism 120, and the target part 200 can be placed on the graphite disk 190 during the extension process. The inner diameter a of the adjustment channel 130 is within the range of [1mm, 6mm].

[0049] The reaction chamber within the housing 110 allows the reacting gases therein to react, thereby achieving the extension of the target component 200. Depending on the requirements for extending the target component 200, the first and second reacting gases can be corresponding gaseous or liquid substances, respectively. Correspondingly, the third reacting gas can be the same as or different from the first or second reacting gas. The adjustment channel 130 is eccentrically positioned relative to the rotation axis, enabling adjustment of the flow rate of the introduced third reacting gas.

[0050] In the above implementation process, by setting the adjustment channel 130 eccentrically, a certain eccentric distance is maintained between the adjustment channel 130 and the rotation center, thereby avoiding the position where the linear velocity of the target part 200 is zero when rotating. Ultimately, the uniformity of the flow field in the central region is improved, which in turn improves the uniformity of the extension of the target part 200.

[0051] Please refer to Figure 2 , Figure 2This is a second structural schematic diagram of the gas spraying device 100 provided in this application embodiment. In some optional embodiments, the first inlet channel 141 and the second inlet channel 142 are respectively disposed on the top 111 of the housing 110. The gas spraying device 100 provided in this application embodiment may further include a housing 110, which has a top 111, a bottom 112, and an internal reaction chamber; the first inlet channel 141 and the second inlet channel 142 are respectively disposed on the top 111 of the housing 110. The gas spraying device 100 also includes a gas equalization device 150 and a gas distribution plate 160 disposed on the top 111 of the housing 110. The gas distribution plate 160 is disposed below the gas equalization device 150. The gas equalization device 150 has a plurality of gas guide holes 151. The first conveying channel 161 and the second conveying channel 162 are respectively disposed on the gas distribution plate 160. One end of the gas guide hole 151 can communicate with the second inlet channel 142, and the other end of the gas guide hole 151 can communicate with the reaction chamber through the second conveying channel 162. One end of the first conveying channel 161 can be connected to the first inlet channel 141, and the other end of the first conveying channel 161 can be connected to the reaction chamber.

[0052] Taking the chemical vapor deposition of organometallic compounds as an example, the first reactant gas can be a hydride gas, and the second reactant gas can be a saturated vapor of an organometallic source. Correspondingly, the third reactant gas introduced through the regulating channel 130 can be one of the first and second reactant gases. The gas equalization device 150 equalizes the second reactant gas through several gas guide holes 151. The gas guide holes 151 and the first introduction channel 141 can be isolated. After the first reactant gas enters the first introduction channel 141, it enters each square slot through small round holes in the upper square slot of the first conveying channel 161; this process is gas equalization (the small round holes are evenly arranged along the circumference, which is the gas equalization setting). Then, it enters the reaction chamber through the first conveying channel 161 under each square slot.

[0053] In the above-described process, by providing a gas equalization device 150 and a gas distribution plate 160 at the top 111 of the housing 110, the first reaction gas and the second reaction gas are respectively transported to the reaction chamber for reaction, thereby achieving the extension of the target part 200. The second reaction gas enters the reaction chamber after being equalized, which allows it to be distributed more evenly within the reaction chamber, thus resulting in a more uniform extension of the target part 200.

[0054] Please continue to refer to Figure 2 In some alternative embodiments, the first conveying channel 161 and the second conveying channel 162 may be arranged alternately on the gas distribution plate 160.

[0055] In the above implementation process, by alternately arranging the first conveying channel 161 and the second conveying channel 162 on the gas distribution plate 160, the first reactant gas and the second reactant gas are mixed more uniformly in the reaction chamber, thereby making the reaction between the first reactant gas and the second reactant gas more thorough and uniform. Ultimately, this further improves the uniformity of the epitaxy of the target part 200.

[0056] Please refer to Figure 3 , Figure 3 This is a schematic diagram of one installation method of the adjustment channel 130 according to an embodiment of this application. In some optional embodiments, the gas spraying device 100 provided in this application embodiment may further include a first fixing member 170. The first fixing member 170 can be sleeved and clamped on the adjustment channel 130. The first fixing member 170 and the adjustment channel 130 can be integrally formed, or they can be connected by welding or threaded ferrules. The first fixing member 170 and the adjustment channel 130 can also be separately formed and connected by ferrules. One end of the first fixing member 170 can be connected to the inner wall of the top 111 of the housing 110, and the other end of the first fixing member 170 can be connected to the side of the gas equalization device 150 facing away from the reaction chamber.

[0057] The first fixing member can be a fixing part of the adjusting channel 130 or a separate component. The first fixing member 170 can also have a through hole, the diameter of which can be adapted to the outer diameter of the adjusting channel 130. The adjusting channel 130 can be fixed by inserting into the through hole and then connecting it with a threaded connection. Specifically, it can be fixed by threaded connection after insertion. The connection between the first fixing member 170 and the housing 110 can also be by welding or snap-fitting.

[0058] In the above process, the adjustment channel 130 is fixed by the first fixing member 170 sleeve and clamping the adjustment channel 130.

[0059] Please refer to Figure 4 , Figure 4 This is a schematic diagram of another installation method of the adjustment channel 130 according to an embodiment of this application. In some optional embodiments, the device may further include a second fixing member 180. The second fixing member 180 can be sleeved and clamped on the adjustment channel 130. The second fixing member 180 can be connected to the outer wall of the top 111 of the housing 110.

[0060] The second fixing member can also be a fixing part of the adjustment channel 130 or a separate component. The second fixing member 180 can also have a through hole, the diameter of which can be adapted to the outer diameter of the adjustment channel 130. The adjustment channel 130 is fixed by being inserted into the through hole. The connection between the second fixing member 180 and the housing 110 can also be by welding, threaded connection or snap-fit, etc.

[0061] In the above process, the second fixing member 180 is used to fit and clamp the adjustment channel 130, thereby achieving the fixation of the adjustment channel 130 in another way.

[0062] Please refer to Figure 5 , Figure 5 This is a schematic diagram of the structure of the regulating channel 130 in the gas spraying device 100 provided in this application embodiment. In some optional embodiments, the inner wall of the end of the regulating channel 130 facing the reaction chamber can be a frustum side surface. The lower bottom surface of the frustum can face the reaction chamber.

[0063] In other words, the end of the regulating channel 130 facing the reaction chamber is shaped like a funnel.

[0064] In the above implementation process, by designing the end of the regulating channel 130 facing the reaction front into a funnel-like shape, the dispersion of the introduced third reactive gas is expanded, thereby making the distribution of the third reactive gas more uniform within the reaction chamber. Ultimately, this further improves the uniformity of the epitaxy of the target component 200.

[0065] Please continue to refer to Figure 5 In some alternative embodiments, the angle between the generatrix of the side of the bottom frustum of the adjustment channel 130 and the bottom surface of the frustum can be located in the range of [45°, 80°]. For example: 73.38°.

[0066] In other words, the angle c of the inclination of the inner wall of the adjusting channel 130, which is flared out, relative to the axis of the adjusting channel is within the range of [45°, 80°].

[0067] In the above implementation process, if the inclination of the flared inner wall of the adjustment channel 130 relative to the axis of adjustment is too large or too small, it will lead to uneven distribution of the introduced third reactive gas. Therefore, by limiting the inclination of the flared inner wall of the adjustment channel 130 relative to the axis of rotation to the range of [45°, 80°], the distribution of the introduced third reactive gas is further expanded, making the distribution of the third reactive gas in the reaction chamber more uniform. Ultimately, this further improves the uniformity of the epitaxy of the target part 200.

[0068] Please combine Figure 2 Reference Figure 6 , Figure 6 This is a top view of the axis of the adjustment channel 130 in the gas spray device 100 provided in this application embodiment on the target component 200. In some optional embodiments, the distance between the axis of the adjustment channel 130 located at one end of the reaction chamber and the rotation axis can be in the range of [1mm, 15mm].

[0069] In other words, the value of the eccentricity d of the adjustment channel 130 can be a distance within the range of [1mm, 15mm].

[0070] In the above implementation process, by limiting the eccentricity of the adjustment channel 130 to a distance within the range of [1mm, 15mm], the uniformity of the flow field in the central region is further improved, thereby further improving the uniformity of the extension of the target part 200.

[0071] Please continue to refer to Figure 3 and Figure 4 In some alternative implementations, the length b of the adjustment channel 130 exposed in the reaction chamber can be in the range of [-25 mm, 20 mm].

[0072] When the length of the adjustment channel 130 exposed in the reaction chamber is negative, for example, -25mm, that is to say, the end of the adjustment channel 130 facing the reaction chamber needs to be extended by more than 25mm to be exposed in the reaction chamber.

[0073] In the above implementation process, by limiting the length of the adjustment channel 130 exposed in the reaction chamber to the range of [-25mm, 20mm], the uniformity of the introduced third reaction gas after entering the reaction chamber is ensured, and the flow rate of the third reaction gas entering the reaction chamber is also conveniently adjusted, so as to better solve the problem of uneven extension of the target part 200 caused by the reaction gas easily stagnating in the central area.

[0074] Please refer to Figure 7 , Figure 7 This diagram illustrates the flow field effect during the operation of most current gas spray devices. Because the target component is rotated, and different areas of the target component 200 have different linear velocities, the outward diffusion effect of the reactant gas also varies. Specifically, the reactant gas closer to the center of rotation of the target component 200 experiences a lower linear velocity, resulting in a poorer diffusion effect. This leads to an uneven flow field, preventing the reactant gas on the surface of the target component 200 from achieving ideal laminar flow. (Refer to...) Figure 8 , Figure 8 This diagram illustrates the flow field effect during the operation of the gas spray device 100 provided in the embodiments of this application. By employing the gas spray device 100 provided in the various embodiments of this application, and by adjusting the flow rate of the third reaction gas in the eccentrically positioned adjustment channel 130, and cooperating with the rotating mechanism 120 to drive the rotation of the target component 200, it is easier to form a uniform laminar flow in the central region of the disk surface of the target component 200. This improves the stability of the flow field within the reaction chamber, thereby enhancing the uniformity of the epitaxy of the target component 200.

[0075] Please refer to Figure 2 In some alternative implementations, the inner diameter of the adjustment channel 130 is in the range of [1 mm, 6 mm].

[0076] The size of the inner diameter 'a' of the regulating channel 130 has a certain influence on the instantaneous flow rate of the reacting gas and also affects the dispersion at the outlet of the regulating channel 130. For example, when the inner diameter of the regulating channel 130 is 1 mm, due to the small pipe diameter, the gas can maintain a linear flow direction for a long distance from the outlet to the surface of the target component, and the outward dispersion is minimal. However, when the inner diameter of the regulating channel 130 is 6 mm, due to the large pipe diameter, the linear distance of the gas after exiting the outlet is shorter, and it quickly diffuses and mixes with the surrounding gas. In practical applications, the actual distance between the lower surface of the gas spray device and the target component needs to be considered. An intermediate value of 4 mm can be used for the inner diameter. With the adjustment of the flow rate of the second reacting gas, a uniform central flow field can be achieved.

[0077] In the above implementation process, by limiting the inner diameter of the regulating channel 130 to the range of [1 mm, 6 mm], the linearity of the third reaction gas after it flows out of the pipe is ensured, thereby further improving the uniformity of the central flow field.

[0078] In some alternative implementations, the gas flow rates of the first inlet channel 141, the second inlet channel 142, and the regulating channel can all be adjusted independently.

[0079] The gas flow rates of the first inlet channel 141, the second inlet channel 142, and the regulating channel are adjustable, which can be achieved by setting corresponding valves on them and adjusting the valve opening.

[0080] In the above implementation process, by independently adjusting the gas flow rates of the first inlet channel 141, the second inlet channel 142 and the adjustment channel, the uniformity of the central flow field is improved by adjusting the flow rates of the first reaction gas, the second reaction gas and the third reaction gas, and finally the uniformity of the extension of the target part 200 is further improved.

[0081] Based on the same concept, embodiments of this application provide a chemical vapor deposition apparatus, which may include the gas spraying device 100 described above.

[0082] The above implementation process is the same as that of the gas spray device 100 described above, and will not be repeated here.

[0083] In summary, the gas spraying device 100 and chemical vapor deposition equipment provided in the various embodiments of this application effectively solve the problem of reactant gas easily stagnating in the central region, leading to uneven epitaxy of the target part 200, by eccentrically setting the adjustment channel 130. By alternately arranging the first conveying channel 161 and the second conveying channel 162 on the gas distribution plate 160, the mixing of the first and second reactant gases in the reaction chamber is made more uniform, resulting in a more thorough and uniform reaction between the first and second reactant gases. Ultimately, this further improves the uniformity of epitaxy of the target part 200. By designing the end of the adjustment channel 130 facing the reaction front in a funnel-like shape, the dispersion of the introduced third reactant gas is expanded, resulting in a more uniform distribution of the third reactant gas within the reaction chamber. Ultimately, this further improves the uniformity of epitaxy of the target part 200. By limiting the inclination of the flared inner wall of the regulating channel 130 relative to the channel axis to the range of [45°, 80°], the dispersion of the introduced third reactant gas is further expanded, making the distribution of the third reactant gas in the reaction chamber more uniform. By limiting the eccentricity of the regulating channel 130 to the range of [1mm, 15mm], the uniformity of the flow field in the central region is further improved.

[0084] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A gas showering apparatus for introducing a reaction gas into the interior of a reaction chamber, characterized by comprising: The device comprises: a first introduction channel for introducing a first reaction gas into the reaction chamber through a first delivery channel; a second introduction channel for introducing a second reaction gas into the reaction chamber through a second delivery channel; a rotating mechanism configured to receive and rotate a target piece to be epitaxied about a rotation axis perpendicular to the plane in which the target piece is received; an adjustment channel for introducing a third reaction gas into the reaction chamber through an adjustment channel outlet; wherein the adjustment channel is located at the top region of the reaction chamber, and the axis of the adjustment channel is not coincident with the rotation axis.

2. The gas sparging device of claim 1, wherein, The device further comprises a housing having a top, a bottom, and the reaction chamber inside; the first introduction channel and the second introduction channel are respectively arranged at the top of the housing; The gas spraying device further comprises a gas distribution plate and a gas uniformizing device arranged at the top of the housing; The gas distribution plate is arranged below the gas uniformizing device; The gas uniformizing device has a plurality of gas guide holes; The first delivery channel and the second delivery channel are respectively arranged on the gas distribution plate; One end of the gas guide hole is in communication with the second introduction channel, and the other end of the gas guide hole is in communication with the reaction chamber through the second delivery channel; One end of the first delivery channel is in communication with the first introduction channel, and the other end of the first delivery channel is in communication with the reaction chamber.

3. The gas sparging device of claim 1, wherein, The inner wall of the end of the adjustment channel facing the reaction chamber is a circular truncated cone side surface; The lower base of the circular truncated cone faces the reaction chamber.

4. The gas sparging device of claim 3, wherein, The included angle between the generatrix of the circular truncated cone side surface and the lower base of the circular truncated cone is in the interval [45°, 80°].

5. The gas sparging device of claim 1, wherein, The distance between the axis of the adjustment channel and the rotation axis is in the interval [1mm, 15mm].

6. The gas sparging device of claim 1, wherein, The length of the adjustment channel exposed in the reaction chamber is in the interval [-25mm, 20mm].

7. The gas sparging device of claim 1, wherein The inner diameter of the adjustment channel is in the interval [1mm, 6mm].

8. The gas sparging device of claim 1, wherein, The gas flow rates of the first introduction channel, the second introduction channel, and the adjustment channel can be independently adjusted.

9. A chemical vapor deposition apparatus characterized by comprising: The device comprises the gas spraying device according to any one of claims 1 to 8.

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