Chemical vapor deposition device
By introducing an electric field into the CVD device to control the distribution and migration of gaseous reactants, the problem of complex electric field application in existing technologies has been solved, resulting in improved material properties and experimental stability, and expanding the application scenarios of CVD technology.
Patent Information
- Application Number
- CN202520099565.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-16
- Publication Date
- 2026-01-02
- Estimated Expiration
- 2035-01-16
AI Technical Summary
Existing CVD equipment is complex in structure and cumbersome to operate when an electric field is introduced, making it difficult to effectively apply an electric field in a tube furnace structure, which affects the deposition effect and material properties.
Design a chemical vapor deposition apparatus, including a high-temperature furnace, a sample tube, a vacuum flange, a lead electrode flange, electrodes, and an electrode holder. An electric field is introduced inside the sample tube through a simple connection method, and the strength and direction of the electric field are controlled by a high-voltage DC power supply to optimize the deposition process.
This technology enables the effective application of an electric field during the CVD process, optimizes the deposition process, improves material properties and preparation efficiency, ensures experimental stability and repeatability, and broadens the application scope of CVD technology.
Smart Images
Figure CN223752892U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of chemical vapor deposition, in particular to a chemical vapor deposition device. BACKGROUND
[0002] Chemical vapor deposition (CVD) is a key technology that refers to the reaction of gaseous or vapor state substances at the gas-solid interface to generate solid materials at high temperature. CVD technology plays an important role in the development of new crystals, deposition of thin film materials and manufacturing of semiconductor devices, and has become an important means in the field of inorganic chemical synthesis.
[0003] The basic principle of CVD includes but is not limited to: in the reaction chamber, introduce gaseous reactants in a specific way, and put a substrate for receiving reactants in the chamber. The gaseous reactants complete a series of processes such as migration and chemical reaction in the gas phase, and deposit on the substrate surface, further chemical reaction to generate solid products, thereby completing the preparation of a specific material.
[0004] In the prior art, the introduction of an electric field as a new control parameter can significantly affect the CVD deposition effect; for example, by applying an external electric field during CVD, the distribution and migration of gaseous reactants in the reaction zone can be further controlled, thereby affecting the deposition process and material properties; the introduction of an electric field can adjust the migration path of the reactants, change the adsorption position and concentration distribution of the reactants on the substrate surface, and promote or inhibit the occurrence of specific chemical reactions; in addition, the electric field can also affect the microstructure and electrical properties of the deposited material, improving the uniformity and quality of the material.
[0005] However, the existing technology introduces an electric field in CVD in a complex and cumbersome way, which is difficult to promote in practical applications. Especially for CVD with a tube furnace structure, it is difficult for an externally introduced electric field to penetrate the high-temperature furnace and affect the quartz tube and the sample inside the quartz tube.
[0006] Therefore, it is urgent to develop an electrically controlled CVD device with a simple structure and easy operation to effectively apply an electric field during CVD, thereby facilitating the study of the effect of the electric field on the material deposition process and results, and optimizing the deposition process. SUMMARY
[0007] The purpose of the present application is to provide an improved chemical vapor deposition device.
[0008] In order to achieve the above purpose, the present application adopts the following technical solutions:
[0009] The application discloses a chemical vapor deposition device, comprising a high-temperature furnace, a sample tube, a vacuum flange, a lead electrode flange, an electrode and an electrode support; the high-temperature furnace has a cavity accommodating the sample tube, and is used for providing a high-temperature heating condition; the sample tube has a cavity accommodating a sample, and two ends of the sample tube are respectively closed by the vacuum flange and the lead electrode flange; the lead electrode flange has a joint outside a side surface, and the joint is connected with a power supply; the electrode is installed on the electrode support; the electrode support is arranged in the sample tube, and is used for carrying the electrode; and the electrode support is connected with the joint of the lead electrode flange through a wire.
[0010] It should be noted that the chemical vapor deposition device of the application introduces an electric field into the sample tube, can effectively regulate and control the distribution and migration of gaseous reactants in a reaction zone, optimizes a deposition process, improves material performance and preparation efficiency, and is simple in structure, convenient to operate, and suitable for chemical vapor deposition preparation and scientific research of various materials; the introduction and application of the electric field are realized through a simple connection mode, the stability and repeatability of an experimental process are ensured, a multi-compatibility design is suitable for various experimental scenes, and the application range of the CVD technology is widened. In summary, the application can apply an electric field in a CVD process and control reaction conditions, improves the stability and repeatability of experiments, ensures further optimization and control of the CVD process, and is suitable for various CVD processes; the electric control CVD device of the application is used for experiments, is an important method for improving the effectiveness of CVD experiments, and has strong practicability.
[0011] In an implementation manner of the application, the vacuum flange is provided with a vacuumizing interface, which is used for connecting a vacuum pump and vacuumizing the inside of the sample tube.
[0012] In an implementation manner of the application, the high-temperature furnace can provide a high temperature of at least 1200 DEG C.
[0013] In an implementation manner of the application, the sample tube is a quartz tube.
[0014] In an implementation manner of the application, the joint of the lead electrode flange is a banana socket.
[0015] In an implementation manner of the application, the vacuum flange and the lead electrode flange are provided with gas path interfaces, which are connected with a gas path through a buckle mode in use, and ensure sealing performance. The gas path interfaces are used for connecting external gas sources and providing reaction gases or reaction atmospheres in the inside of the sample tube.
[0016] In an implementation manner of the application, the electrode support is designed with a sample table at a front end, which is used for carrying reaction substances required by a chemical vapor deposition reaction.
[0017] In an implementation form of the present application, the power supply is a high-voltage direct current power supply, which can adjust the voltage size and polarity to control the intensity and direction of the electric field, so as to introduce an external electric field in the process of chemical vapor deposition to explore the influence of the electric field parameters on the material prepared by chemical vapor deposition.
[0018] By adopting the above technical solutions, the present application has the following beneficial effects:
[0019] The chemical vapor deposition device of the present application can effectively regulate and control the distribution and migration of gaseous reactants in the reaction zone, optimize the deposition process, and improve the material performance and preparation efficiency by introducing an electric field in the sample tube. Moreover, the structure is simple and convenient to operate, and is suitable for chemical vapor deposition preparation and scientific research of various materials. By means of simple connection, the introduction and application of the electric field are realized, ensuring the stability and repeatability of the experimental process. The multi-compatibility design is suitable for various experimental scenes, thereby widening the application range of the CVD technology. BRIEF DESCRIPTION OF DRAWINGS
[0020] Figure 1 Fig. 1 is a structural schematic diagram of a chemical vapor deposition device in an embodiment of the present application;
[0021] Figure 2 Fig. 2 is a structural schematic diagram of a lead electrode flange in an embodiment of the present application. DETAILED DESCRIPTION
[0022] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.
[0023] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.
[0024] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this utility model, "a plurality of" means two or more, unless otherwise explicitly specified.
[0025] Example
[0026] The chemical vapor deposition apparatus in this example, such as Figure 1 and Figure 2 As shown, it includes a high-temperature furnace 1, a sample tube 2, a vacuum flange 3, a lead electrode flange 4, an electrode 5, and an electrode support 6.
[0027] The high-temperature furnace 1 has a cavity to accommodate the sample tube 2, providing high-temperature heating conditions. In this example, the high-temperature furnace can provide a temperature of at least 1200°C. The sample tube 2 has a cavity to accommodate the sample. Both ends of the sample tube 2 are sealed by a vacuum flange 3 and a lead electrode flange 4, respectively. In this example, the sample tube is a quartz tube. The lead electrode flange 4 has a connector for connecting to a power source on its outer side. The electrode 5 is mounted on an electrode support 6. The electrode support 6 is placed inside the sample tube 2 to support the electrode 5. The electrode support 6 is connected to the connector of the lead electrode flange 4 via a wire. In use, the connector of the lead electrode flange 4 is connected to a power source, causing the electrode 5 to generate an electric field inside the sample tube. In this example, the connector is a banana plug. In use, the lead electrode flange 4 seals the end of the quartz tube, and the connector on the outer side is connected to a power source, causing the electrode 5 to generate an electric field inside the quartz tube.
[0028] In this example, vacuum flange 3 is equipped with a vacuum port for connecting a vacuum pump to evacuate the inside of sample tube 2. Vacuum flange 3 and lead electrode flange 4 are equipped with gas path ports, which are connected to the gas path via a snap-fit mechanism to ensure a tight seal. These gas path ports are used to connect to an external gas source to supply reaction gas or a reaction atmosphere to the inside of sample tube 2.
[0029] In this example, the front end of the electrode holder 6 is designed with a sample stage 61 to support the reaction materials required for the chemical vapor deposition reaction.
[0030] The power supply used in this example is a high-voltage DC power supply. This high-voltage DC power supply can adjust the voltage magnitude and polarity to control the strength and direction of the electric field, thereby introducing an external electric field during the chemical vapor deposition process to explore the influence of electric field parameters on the preparation of materials by chemical vapor deposition.
[0031] The method of electrically controlled chemical vapor deposition based on the chemical vapor deposition device in the example comprises the following steps: firstly, placing a substrate of a material to be deposited in a proper position in a quartz tube; starting a high-temperature furnace and heating to a required deposition temperature; at the same time, applying an electric field to an electrode through a high-voltage direct-current power supply so as to introduce the electric field into the interior of the quartz tube through a lead electrode flange; then, introducing a gaseous precursor so as to cause a chemical reaction of the gaseous precursor on the surface of the substrate and grow a required material. In the process, the influence of the electric field on the deposition process and result can be studied by adjusting the intensity and direction of the electric field, and the deposition process can be optimized.
[0032] In summary, the example can apply an electric field in a CVD process, control reaction conditions, improve the stability and repeatability of experiments, ensure further optimization and control of the CVD process, and is suitable for various CVD processes. Therefore, using the electrically controlled CVD device to conduct experiments is an important method to improve the effectiveness of CVD experiments, and has strong practicability.
[0033] The above describes the present application by using specific examples, which is only used to help understand the present application and does not limit the present application. According to the idea of the present application, those skilled in the art can make several simple deductions, deformations or substitutions.
Claims
1. A chemical vapor deposition apparatus characterized by comprising: The high-temperature furnace (1), the sample tube (2), the vacuum flange (3), the lead electrode flange (4), the electrode (5) and the electrode support (6) are included. The high-temperature furnace (1) has a cavity for accommodating the sample tube (2) to provide high-temperature heating conditions. The sample tube (2) has a cavity for accommodating a sample, and the two ends of the sample tube (2) are respectively closed by the vacuum flange (3) and the lead electrode flange (4). The lead electrode flange (4) has a connector on the outer side for connecting a power supply. The electrode (5) is installed on the electrode support (6). The electrode support (6) is placed in the sample tube (2) to carry the electrode (5), and the electrode support (6) is connected to the connector of the lead electrode flange (4) through a wire; in use, the connector of the lead electrode flange (4) is connected to the power supply, so that the electrode (5) generates an electric field inside the sample tube.
2. The chemical vapor deposition apparatus according to claim 1, characterized by: The vacuum flange (3) is provided with a vacuum interface for connecting a vacuum pump to perform vacuumization on the inside of the sample tube (2).
3. The chemical vapor deposition apparatus according to claim 1, wherein: The high-temperature furnace (1) can provide a high temperature of at least 1200℃.
4. The chemical vapor deposition apparatus according to claim 1, wherein: The sample tube (2) is a quartz tube.
5. The chemical vapor deposition apparatus according to claim 1, wherein: The connector of the lead electrode flange (4) is a banana socket.
6. The chemical vapor deposition apparatus of claim 1, wherein: The vacuum flange (3) and the lead electrode flange (4) are provided with gas path interfaces, which are connected to a gas path through a buckle mode to ensure sealing performance.
7. The chemical vapor deposition apparatus according to any one of claims 1 to 6, wherein: The front end of the electrode support (6) is designed with a sample stage (61) for carrying reaction substances required for chemical vapor deposition reaction.
8. The chemical vapor deposition apparatus according to any one of claims 1 to 6, wherein: The power supply is a high-voltage direct-current power supply, which can adjust the voltage size and polarity to control the strength and direction of the electric field.